Continuous growth device for silicon carbide epitaxial furnace

Abstract

The utility model discloses a continuous growth device for a silicon carbide epitaxial furnace. The continuous growth device comprises a transmission chamber; the substrate slice temporary storage box is arranged on the first side of the transmission chamber; the substrate slice assembly cavity is arranged between the substrate slice temporary storage box and the transmission cavity; the first separating table is arranged in the substrate slice assembling cavity; the bearing ring is suitable for bearing the substrate slice, is arranged on the first separation table and is used for realizing splicing and separation of the substrate slice and the bearing ring; the epitaxial wafer temporary storage box is arranged on the second side of the transmission chamber; the epitaxial wafer cooling cavity is arranged between the epitaxial wafer temporary storage box and the transmission cavity; the second separation table is arranged in the epitaxial wafer cooling cavity and is used for separating the epitaxial wafer from the bearing ring; the mechanical arm is arranged in the transmission chamber; and the reaction chamber is arranged on the third side of the transmission chamber. According to the utility model, a plurality of wafers can be introduced at one time and continuously grow, so that the production efficiency is improved, the manual interference is reduced due to full mechanization of wafer placement and transfer, the product yield is improved, and the production cost is reduced.

Description

Technical Field

[0001] This utility model belongs to the field of silicon carbide epitaxial growth technology, and more specifically, it relates to a continuous growth apparatus for a silicon carbide epitaxial furnace. Background Technology

[0002] A silicon carbide epitaxial furnace is a piece of equipment used to produce silicon carbide epitaxial wafers. In the production of silicon carbide epitaxial wafers, the substrate wafer needs to be transferred multiple times. The usual method involves operators using a vacuum pen to transfer each wafer individually into the loading cavity. This process is problematic because manual wafer placement is prone to issues such as wafer detachment and scratches due to inconsistent techniques among operators, and even variations in the same operator's technique depending on their condition. This results in poor epitaxial quality or even scrap. Furthermore, manual wafer placement increases labor costs, cannot support continuous growth, is extremely inefficient, and relies heavily on visual inspection for accuracy. Summary of the Invention

[0003] This invention aims to solve at least one of the technical problems existing in the prior art. To this end, this invention provides a continuous growth apparatus for a silicon carbide epitaxial furnace, designed to enable continuous growth of epitaxial wafers, thereby improving production efficiency and product yield.

[0004] To achieve the above objectives, the present invention adopts the following technical solution: a continuous growth apparatus for a silicon carbide epitaxial furnace, comprising: a transfer chamber for providing an environment for transferring wafers; a substrate storage box disposed on a first side of the transfer chamber, the substrate storage box being used to accommodate a first chuck, the first chuck containing a plurality of substrate wafers; a substrate assembly cavity disposed between the substrate storage box and the transfer chamber; a first separation stage disposed in the substrate assembly cavity, the first separation stage having a liftable moving end; and a support ring adapted to support the substrate wafers and disposed on the first separation stage, the lifting and lowering of the first separation stage being used to realize the transfer of the substrate wafers. The system includes: splicing and separation of the substrate and the carrier ring; an epitaxial wafer storage box, located on the second side of the transfer chamber, used to accommodate a second chuck for placing the grown epitaxial wafer; an epitaxial wafer cooling chamber, located between the epitaxial wafer storage box and the transfer chamber; a second separation stage, located in the epitaxial wafer cooling chamber, also having a liftable actuator, used to separate the epitaxial wafer from the carrier ring; a robotic arm, located within the transfer chamber, used for wafer transfer; and a reaction chamber, located on the third side of the transfer chamber, used to provide an environment for substrate growth.

[0005] Preferably, one end of the substrate assembly cavity is connected to the transfer chamber, and a first gate valve is provided at the connection point between the two. The other end of the substrate assembly cavity is connected to the substrate storage box, and a second gate valve is provided at the connection point between the two. When the substrate storage box is opened to insert or remove the first plug, the first gate valve and the second gate valve rise to isolate the outside world from contact with the transfer chamber. When the substrate storage box is closed, the first gate valve and the second gate valve fall to realize the connection between the substrate storage box, the substrate assembly cavity and the transfer chamber.

[0006] Preferably, one end of the epitaxial wafer cooling chamber is connected to the transmission chamber, and a third gate valve is provided at the connection point between the two. The other end of the epitaxial wafer cooling chamber is connected to the epitaxial wafer storage box, and a fourth gate valve is provided at the connection point between the two. When the epitaxial wafer storage box is opened to insert or remove the second plug, the third and fourth gate valves rise to isolate the external environment from contact with the transmission chamber. When the epitaxial wafer storage box is closed, the third and fourth gate valves fall to achieve communication between the epitaxial wafer storage box, the epitaxial wafer cooling chamber, and the transmission chamber.

[0007] Preferably, both the first separation stage and the second separation stage include a lifting boss and a periphery disposed outside the lifting boss. The bearing ring is placed on the periphery. The splicing and separation of the substrate and the bearing ring, as well as the separation of the epitaxial wafer and the bearing ring, are achieved by raising or lowering the lifting boss.

[0008] Preferably, the robotic arm is a multi-axis robotic arm, and the multi-axis robotic arm is provided with a finger structure suitable for gripping the wafer and the carrier ring to realize the transfer of the wafer.

[0009] Preferably, the cross-section of the transmission chamber is a regular octagon, and the substrate storage box, epitaxial wafer storage box and reaction chamber are respectively arranged on three non-adjacent sides of the transmission chamber.

[0010] Preferably, a maintenance window is provided on the top of the transmission chamber, a maintenance end cover is provided on the maintenance window, and a maintenance end cover opening and closing mechanism is provided on the fourth side of the transmission chamber, the maintenance end cover opening and closing mechanism being connected to the maintenance end cover.

[0011] Preferably, both the substrate storage box and the epitaxial wafer storage box are provided with an upper cover for opening or closing the substrate storage box and the epitaxial wafer storage box to insert or remove the first or second clip.

[0012] Preferably, the first and second cassettes can assemble multiple substrate wafers and epitaxial wafers at once.

[0013] This utility model has the following advantages due to the adoption of the above technical solution:

[0014] 1. This utility model replaces manual wafer placement with a transfer chamber design equipped with a robotic arm, which can import multiple wafers at once and grow them continuously, improving production efficiency. The fully mechanized wafer placement and transfer reduces human interference, improves product yield, and reduces production costs.

[0015] 2. This utility model is equipped with a substrate storage box and an epitaxial wafer storage box that are connected to the transmission chamber. The storage boxes can store substrates or epitaxial wafers. At the same time, gate valves are installed between each chamber. When the storage box is opened, the gate valves rise to isolate the outside world from the transmission chamber and ensure the cleanliness of the chamber. When the storage box is closed, the gate valves fall to realize the connection between the chambers. Attached Figure Description

[0016] Various other advantages and benefits will become apparent to those skilled in the art upon reading the following detailed description of preferred embodiments. The accompanying drawings are for illustrative purposes only and are not intended to limit the scope of the invention. Throughout the drawings, the same reference numerals denote the same parts. In the drawings:

[0017] Figure 1 This is an exploded structural diagram of a continuous growth apparatus for a silicon carbide epitaxial furnace provided in an embodiment of the present invention.

[0018] Figure 2 This is an assembly diagram of the continuous growth apparatus for a silicon carbide epitaxial furnace provided in this embodiment of the present invention.

[0019] The labels for the attached figures are as follows:

[0020] 1-Transfer chamber; 2-Substrate assembly chamber; 3-First gate valve; 4-Substrate storage box; 5-First chuck; 6-Substrate; 7-Second gate valve; 8-Bearing ring; 9-First separation stage; 10-Robotic arm; 11-Epiaxial wafer cooling chamber; 12-Second separation stage; 13-Epiaxial wafer; 14-Second chuck; 15-Epiaxial wafer storage box; 16-Third gate valve; 17-Fourth gate valve; 18-Maintenance end cover; 19-Maintenance end cover opening and closing mechanism; 20-Upper end cover. Detailed Implementation

[0021] To make the objectives, technical solutions, and advantages of this utility model clearer, the specific embodiments of this utility model will be further described below with reference to the accompanying drawings. Although exemplary embodiments of this utility model are shown in the drawings, it should be understood that this utility model can be implemented in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided to enable a more thorough understanding of this utility model and to fully convey the scope of this utility model to those skilled in the art.

[0022] In the description of this utility model, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicating the orientation or positional relationship are based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this utility model and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this utility model.

[0023] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this utility model, "a plurality of" means two or more, unless otherwise explicitly specified.

[0024] In this utility model, unless otherwise explicitly specified and limited, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model according to the specific circumstances.

[0025] In this utility model, unless otherwise explicitly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0026] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of the present invention. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0027] This invention provides a continuous growth apparatus for silicon carbide epitaxial furnaces, comprising: a transfer chamber; a substrate storage box disposed on the first side of the transfer chamber; a substrate assembly cavity disposed between the substrate storage box and the transfer chamber; a first separation stage disposed in the substrate assembly cavity; a carrier ring adapted to carry the substrate and disposed on the first separation stage for splicing and separating the substrate and the carrier ring; an epitaxial wafer storage box disposed on the second side of the transfer chamber; an epitaxial wafer cooling cavity disposed between the epitaxial wafer storage box and the transfer chamber; a second separation stage disposed in the epitaxial wafer cooling cavity for separating the epitaxial wafer from the carrier ring; a robotic arm disposed within the transfer chamber; and a reaction chamber disposed on the third side of the transfer chamber. This invention allows for the simultaneous introduction and continuous growth of multiple wafers, improving production efficiency. The fully mechanized wafer placement and transfer reduces manual interference, increases product yield, and lowers production costs.

[0028] The continuous growth apparatus for silicon carbide epitaxial furnace provided in the embodiments of this utility model will now be described in detail with reference to the accompanying drawings.

[0029] Please see Figure 1 , Figure 2The continuous growth apparatus for silicon carbide epitaxial furnace provided in this embodiment includes: a transfer chamber 1 for providing an environment for transferring wafers; a substrate storage box 4 disposed on the first side of the transfer chamber 1, the substrate storage box 4 for accommodating a first cassette 5, the first cassette 5 containing a plurality of substrate wafers 6; a substrate assembly cavity 2 disposed between the substrate storage box 4 and the transfer chamber 1; a first separation stage 9 disposed in the substrate assembly cavity 2, the first separation stage 9 having a liftable moving end; a support ring 8 adapted to support the substrate wafers 6 and disposed on the first separation stage 9, the first separation stage 9 being raised and lowered to achieve splicing and separation of the substrate wafers 6 and the support ring 8; and an epitaxial wafer storage box 15. An epitaxial wafer temporary storage box 15 is located on the second side of the transfer chamber 1. The second cassette 14 is used to hold the epitaxial wafer 13 after growth. An epitaxial wafer cooling chamber 11 is located between the epitaxial wafer temporary storage box 15 and the transfer chamber 1. A second separation stage 12 is located in the epitaxial wafer cooling chamber 11. The second separation stage 12 also has a liftable moving end. The epitaxial wafer 13 is separated from the carrier ring 8 by lifting the second separation stage 12. A robotic arm 10 is located in the transfer chamber 1 and is used to transfer the substrate 6 and the epitaxial wafer 13. A reaction chamber (not shown in the figure) is located on the third side of the transfer chamber 1 and is used to provide an environment for the growth of the substrate 6.

[0030] In the above embodiments, preferably, one end of the substrate assembly cavity 2 is connected to the transfer chamber 1, and a first gate valve 3 is provided at the connection between the two. The other end of the substrate assembly cavity 2 is connected to the substrate storage box 4, and a second gate valve 7 is provided at the connection between the two. When the substrate storage box 4 is opened to insert or remove the first plug 5, the first gate valve 3 and the second gate valve 7 rise to isolate the outside world from contact with the transfer chamber 1 and ensure the cleanliness of the transfer chamber 1. When the substrate storage box 4 is closed, the first gate valve 3 and the second gate valve 7 fall to realize the connection between the substrate storage box 4, the substrate assembly cavity 2 and the transfer chamber 1.

[0031] In the above embodiment, preferably, one end of the epitaxial wafer cooling cavity 11 is connected to the transfer chamber 1, and a third gate valve 16 is provided at the connection between the two. The other end of the epitaxial wafer cooling cavity 11 is connected to the epitaxial wafer temporary storage box 15, and a fourth gate valve 17 is provided at the connection between the two. When the epitaxial wafer temporary storage box 15 is opened to insert or remove the second stopper 14, the third gate valve 16 and the fourth gate valve 17 rise to isolate the outside world from contact with the transfer chamber 1, ensuring the cleanliness of the transfer chamber 1. When the epitaxial wafer temporary storage box 15 is closed, the third gate valve 16 and the fourth gate valve 17 fall to realize the connection between the epitaxial wafer temporary storage box 15, the epitaxial wafer cooling cavity 11, and the transfer chamber 1.

[0032] In the above embodiments, preferably, the first separation stage 9 and the second separation stage 12 both include a lifting boss and a periphery disposed outside the lifting boss. The bearing ring 8 is placed on the periphery. The splicing and separation of the substrate 6 and the bearing ring 8, as well as the separation of the epitaxial wafer 13 and the bearing ring 8, are realized by the rising or falling of the lifting boss.

[0033] In the above embodiments, preferably, the robotic arm 10 is a multi-axis robotic arm, and the multi-axis robotic arm is provided with a finger structure suitable for holding the wafer (i.e., the substrate 6 or the epitaxial wafer 13) and the carrier ring 8 to realize the transfer of the wafer.

[0034] In the above embodiments, preferably, the cross-section of the transmission chamber 1 is a regular octagon, and the substrate storage box 4, the epitaxial wafer storage box 15 and the reaction chamber are respectively arranged on three non-adjacent sides of the transmission chamber 1.

[0035] In the above embodiments, preferably, a maintenance window is provided on the top of the transmission chamber 1, a maintenance end cover 18 is provided on the maintenance window, and a maintenance end cover opening and closing mechanism 19 is provided on the fourth side of the transmission chamber 1. The maintenance end cover opening and closing mechanism 19 is connected to the maintenance end cover 18, thereby allowing the maintenance end cover 18 to be opened for maintenance or cleaning of the transmission chamber 1 and the robotic arm 10.

[0036] In the above embodiments, preferably, both the substrate storage box 4 and the epitaxial wafer storage box 15 are provided with an upper cover 20 for opening or closing the substrate storage box 4 and the epitaxial wafer storage box 15 to insert or remove the first cassette 5 or the second cassette 14.

[0037] In the above embodiments, preferably, the first cassette 5 and the second cassette 14 can assemble multiple substrate wafers 6 and epitaxial wafers 13 at one time.

[0038] The continuous growth apparatus for silicon carbide epitaxial furnace provided by this utility model is used as follows:

[0039] 1) Open the substrate storage box 4, place the first cassette 5 containing the substrate 6 into the designated position of the substrate storage box 4, close the substrate storage box 4, balance the pressure of the substrate storage box 4, the substrate assembly cavity 2 and the transmission chamber 1, and then open the first gate valve 3 and the second gate valve 7.

[0040] 2) Start the robotic arm 10 to pick up the substrate 6. When the substrate 6 reaches the substrate assembly cavity 2, close the second gate valve 7 (to reduce the impact on the ungrown substrate 6 in the first plug 5). The robotic arm 10 lifts the substrate 6 to the designated position in the substrate assembly cavity 2.

[0041] 3) The first separation stage 9 rises up until it lifts the substrate 6 to a certain height. At this time, the robotic arm 10 retracts a short distance (so as not to affect the coordination between the substrate 6 and the carrier ring 8 when they descend). Then the first separation stage 9 descends to complete the splicing of the substrate 6 and the carrier ring 8.

[0042] 4) The robotic arm 10 moves to lift the substrate 6 and the carrier ring 8 and transfer them to the transfer chamber 1. The first gate valve 3 is closed. Then the robotic arm 10 transfers the substrate 6 and the carrier ring 8 to the reaction chamber to start growth.

[0043] 5) After the growth is completed and the temperature is reduced to 900℃, the third gate valve 16 is opened, the robotic arm 10 places the epitaxial wafer 13 and the carrier ring 8 on the second separation stage 11, and then the third gate valve 16 is closed to cool the epitaxial wafer 13 and the carrier ring 8 in the epitaxial wafer cooling chamber 2.

[0044] 6) At the same time, the robotic arm 10 moves again and repeats steps 2)-4). During this time, the epitaxial wafer 13 and the carrier ring 8 in the epitaxial wafer cooling chamber are cooled. The second separation stage 11 rises up and lifts the epitaxial wafer 13, completing the separation of the epitaxial wafer 13 from the carrier ring 8. The robotic arm 10 lifts the epitaxial wafer 13 again, the second separation stage 11 descends, the fourth gate valve 17 is opened, and the robotic arm 10 places the grown epitaxial wafer 13 into the second cassette 14 in the epitaxial wafer temporary storage box 15.

[0045] 7) The robotic arm 10 retracts, and steps 2)-6) are repeated until all substrates 6 in the first cassette 5 have been grown, and the continuous growth process ends.

[0046] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and not to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. These modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application, and they should all be covered within the scope of the claims and specification of this application. In particular, as long as there is no structural conflict, the various technical features mentioned in the embodiments can be combined in any way. This application is not limited to the specific embodiments disclosed herein, but includes all technical solutions falling within the scope of the claims.

Claims

1. A continuous growth apparatus for a silicon carbide epitaxial furnace, characterized in that, include: The transfer chamber is used to provide an environment for transferring wafers; A substrate storage box is disposed on the first side of the transmission chamber. The substrate storage box is used to accommodate a first cassette, and a plurality of substrates are placed in the first cassette. A substrate assembly cavity is disposed between the substrate temporary storage box and the transfer chamber; A first separation stage is disposed in the substrate assembly cavity, and the first separation stage has a lifting and lowering movable end; A support ring, adapted to support the substrate sheet and disposed on the first separation stage, allows the substrate sheet to be spliced ​​and separated from the support ring by raising and lowering the first separation stage; An epitaxial wafer storage box is disposed on the second side of the transmission chamber. The epitaxial wafer storage box is used to accommodate a second cassette, and the second cassette is used to place an epitaxial wafer that has been grown. An epitaxial wafer cooling chamber is disposed between the epitaxial wafer temporary storage box and the transfer chamber; The second separation stage is disposed in the epitaxial wafer cooling cavity. The second separation stage also has a lifting and lowering movable end. The separation of the epitaxial wafer and the carrier ring is achieved by lifting and lowering the second separation stage. A robotic arm, located within the transfer chamber, is used to transfer the wafer. A reaction chamber, located on the third side of the transfer chamber, is used to provide an environment for the growth of the substrate.

2. The continuous growth apparatus according to claim 1, characterized in that, One end of the substrate assembly cavity is connected to the transfer chamber, and a first gate valve is provided at the connection point between the two. The other end of the substrate assembly cavity is connected to the substrate storage box, and a second gate valve is provided at the connection point between the two. When the substrate storage box is opened to insert or remove the first plug, the first gate valve and the second gate valve rise to isolate the outside from contact with the transfer chamber. When the substrate storage box is closed, the first gate valve and the second gate valve fall to realize the connection between the substrate storage box, the substrate assembly cavity and the transfer chamber.

3. The continuous growth apparatus according to claim 2, characterized in that, One end of the epitaxial wafer cooling chamber is connected to the transmission chamber, and a third gate valve is provided at the connection point between the two. The other end of the epitaxial wafer cooling chamber is connected to the epitaxial wafer temporary storage box, and a fourth gate valve is provided at the connection point between the two. When the epitaxial wafer temporary storage box is opened to insert or remove the second plug, the third and fourth gate valves rise to isolate the external environment from contact with the transmission chamber. When the epitaxial wafer temporary storage box is closed, the third and fourth gate valves fall to achieve communication between the epitaxial wafer temporary storage box, the epitaxial wafer cooling chamber, and the transmission chamber.

4. The continuous growth apparatus according to claim 1, characterized in that, Both the first separation stage and the second separation stage include a lifting boss and a periphery disposed outside the lifting boss. The bearing ring is placed on the periphery. The splicing and separation of the substrate and the bearing ring, as well as the separation of the epitaxial wafer and the bearing ring, are realized by the raising or lowering of the lifting boss.

5. The continuous growth apparatus according to claim 1, characterized in that, The robotic arm is a multi-axis robotic arm, and the multi-axis robotic arm is equipped with a finger structure suitable for gripping the wafer and the carrier ring to realize the transfer of the wafer.

6. The continuous growth apparatus according to any one of claims 1 to 5, characterized in that, The cross-section of the transmission chamber is a regular octagon, and the substrate storage box, epitaxial wafer storage box and reaction chamber are respectively located on three non-adjacent sides of the transmission chamber.

7. The continuous growth apparatus according to claim 6, characterized in that, A maintenance window is provided on the top of the transmission chamber, and a maintenance end cover is provided on the maintenance window. A maintenance end cover opening and closing mechanism is provided on the fourth side of the transmission chamber, and the maintenance end cover opening and closing mechanism is connected to the maintenance end cover.

8. The continuous growth apparatus according to any one of claims 1 to 5, characterized in that, Both the substrate storage box and the epitaxial wafer storage box are provided with an upper cover for opening or closing the substrate storage box and the epitaxial wafer storage box to insert or remove the first or second clip.

9. The continuous growth apparatus according to any one of claims 1 to 5, characterized in that, The first and second cassettes can assemble multiple substrate wafers and epitaxial wafers at once.

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