High-temperature coated wafer carrier

Abstract

The utility model provides a high-temperature coated wafer carrier, which relates to the technical field of wafer coating, and comprises a plurality of connecting rods, a bottom plate, a top plate, a plurality of layers of supporting plates and a plurality of sections of supporting pieces, the bottoms of the plurality of connecting rods are fixedly distributed on the bottom plate, the tops of the plurality of connecting rods are connected with the top plate, each layer of supporting plate is provided with a plurality of through holes, the connecting rods penetrate through the through holes in the supporting plates, and the supporting pieces are fixed on the bottom plate. According to the utility model, through the gaps reserved between the connecting rods and the inner walls of the through holes in the multiple layers of supporting plates and the gaps reserved between the outer diameters of the connecting rods and the inner diameters of the supporting pieces, the heat expansion and cold contraction stress generated during high-temperature coating is released in the horizontal and vertical directions, so that the heat expansion and cold contraction stress is reduced, and the heat expansion and cold contraction stress is reduced; and deformation is prevented, so that the performance of the high-temperature coating is improved.

Description

Technical Field

[0001] This utility model relates to the field of wafer coating technology, and in particular to a high-temperature coated wafer carrier. Background Technology

[0002] In automated production, wafer components need to be coated. Traditional coating methods only coat individual wafers, which leads to low production efficiency. As technology continues to develop, the required production capacity is increasing. However, the material of the wafer tray will inevitably deform under vacuum and high temperature conditions, which will affect the final result of the wafer coating product.

[0003] To address the impacts on wafers during coating, it is necessary to utilize the principles of material mechanics deformation and stress to release stress in a directional manner and to make deformation directional, thereby not affecting the basic structure of the object. This will prevent the deformation of the wafer tray caused by temperature changes during wafer coating and make the wafer coating process more temperature stable. Utility Model Content

[0004] To address the problems in the prior art, this invention provides a high-temperature coating wafer carrier, which is typically used in high-temperature coating processes based on atomic layer deposition, facilitating automated loading.

[0005] The basic concept of the technical solution adopted by this utility model is as follows: a high-temperature coated wafer carrier includes multiple connecting rods, a base plate, a top plate, a multi-layer support plate, and multiple support segments. The multiple connecting rods are fixedly distributed on the base plate, and the top of the connecting rods is connected to the top plate. The multi-layer support plate has multiple through holes, and each connecting rod passes through the through holes in the support plate. Each connecting rod is surrounded by multiple support segments, and the support segments are hollow structures. The multi-layer support plate is supported by the multiple support segments. For the high-temperature coated wafer carrier, a gap is left between the uppermost support plate and the top plate.

[0006] Furthermore, the through hole is circular or elliptical.

[0007] Furthermore, a round hole is made in the center of the tray.

[0008] Furthermore, multiple connecting rods are welded and fixed to the base plate along the circumferential direction.

[0009] Optionally, the plurality of the connecting rods are connected to the top plate circumferentially by threads / nuts or snap pins.

[0010] Optionally, the support member is cylindrical, with its outer diameter larger than the diameter of the through hole in the support plate and its inner diameter larger than the outer diameter of the connecting rod.

[0011] Optionally, the top and / or bottom of the plurality of trays are further provided with a plurality of first step holes and second step holes, the connecting rod passes through the first step hole, and a gap is left between the outer diameter of the connecting rod and the inner diameter of the first step hole, the support is sleeved on the first step hole, and the coated wafer is placed on the second step hole.

[0012] Optionally, the plurality of the aforementioned support members may also have steps at the contact points with the top plate.

[0013] Optionally, a gap is left between the connecting rod and the inner diameter of the support member.

[0014] Optionally, a gap is left between the connecting rod and the inner wall of the through hole on the multi-layer support plate.

[0015] By adopting the above technical solution, the present invention has the following beneficial effects compared with the prior art. Of course, any product implementing the present invention does not necessarily need to achieve all of the following advantages at the same time:

[0016] 1. In actual use, multiple support plates are supported by multiple support members. Then, the wafer to be coated is placed inside the second step hole on each layer of the support plate. The top plate is installed on the top of the carrier by the connecting rod. The connecting rod passes through the through hole and the first step hole of the multi-layer support plate. Multiple support members are connected to the connecting rod to form an integral frame with the multi-layer support plate. Then, the integral frame is placed inside the heating equipment to perform high-temperature coating on the wafer.

[0017] 2. Under high temperature, the pallet will experience thermal expansion and contraction. When thermal expansion and contraction occurs in the horizontal direction of the pallet, the gaps between the inner wall of the through hole, the first step hole, and the connecting rod on the pallet can prevent interference between the thermal expansion and contraction of the pallet and the connecting rod. The resulting thermal expansion and contraction stress can be released evenly in the horizontal direction. Similarly, the gap between the outer diameter of the connecting rod and the inner diameter of the support can prevent interference between the thermal expansion and contraction of the support and the connecting rod. The resulting thermal expansion and contraction stress can be released evenly in the horizontal direction.

[0018] 3. In the vertical direction, due to the gap between the pallet, support, and top plate, when the pallet experiences thermal expansion and contraction in the vertical direction, the gap at the connection between the connecting rod and the top of the support can buffer the expansion and contraction, preventing interference in the vertical direction and allowing the thermal expansion and contraction forces to be released evenly in the vertical direction. Furthermore, a circular hole is opened in the middle of the pallet, which reduces material usage and, while ensuring the strength of the pallet itself, can release the stress generated by temperature changes to a certain extent, reducing the heat capacity in the middle of the pallet and preventing deformation under the thermal expansion and contraction effect. Attached Figure Description

[0019] The accompanying drawings described below are merely some embodiments. Those skilled in the art can obtain other drawings based on these drawings without any creative effort. In the drawings:

[0020] Figure 1 A front view of a high-temperature coated wafer carrier is provided for this utility model;

[0021] Figure 2 A top-view three-dimensional structural diagram of a support plate in a high-temperature coated wafer carrier is provided for this utility model;

[0022] Figure 3 A top-view three-dimensional structural diagram of a support plate in a high-temperature coated wafer carrier is provided for this utility model;

[0023] Figure 4 This utility model presents a top-view three-dimensional structural diagram of the top plate of a high-temperature coated wafer carrier;

[0024] Figure 5 This utility model Figure 1 Enlarged view of point A in the middle;

[0025] Figure 6 This utility model Figure 3 A magnified view of point B in the middle.

[0026] The attached diagram lists the components represented by each number as follows:

[0027] 1. Support component; 2. Connecting rod; 3. Support plate; 4. Another support plate; 5. Base plate; 6. Top plate; 7. Fixing block; 8. First step hole; 9. Through hole; 10. Second step hole; 11. Center hole of support plate.

[0028] It should be noted that these accompanying drawings and textual descriptions are not intended to limit the scope of the present invention in any way, but rather to illustrate the concept of the present invention to those skilled in the art by referring to specific embodiments. Detailed Implementation

[0029] The present invention will now be described in further detail with reference to the accompanying drawings.

[0030] Example 1, as Figure 1-6As shown, this utility model provides a high-temperature coated wafer carrier, which is commonly used in high-temperature coating processes based on atomic layer deposition (ALD) to facilitate automated loading. Its technical solution includes multiple connecting rods 2, a base plate 5, a top plate 6, a multi-layer support plate 3, and multiple support segments 1. The multiple connecting rods 2 are fixedly distributed on the base plate 5, with the top of each connecting rod 2 connected to the top plate 6. The multi-layer support plate 3 has multiple through holes 9, with each connecting rod 2 passing through one of the through holes 9. The multiple support segments 1 are hollow structures, with multiple support segments 1 sleeved around the periphery of each connecting rod 2. The multi-layer support plate 3 is supported by the multiple support segments 1, and a gap is left between the uppermost support plate 3 and the top plate 6.

[0031] The effect achieved in Example 1 is that, in actual use, multiple support members 1 support multiple trays 3, and connecting rods 2 install the top plate 6 on the top of the carrier, so that multiple support members 1 and multiple trays 3 are connected into an integral frame. The wafer to be coated is placed inside the second step hole 10 on each tray 3, and then the integral frame is placed inside the heating equipment to perform high-temperature coating on the wafer.

[0032] Furthermore, the through hole 9 on the tray 3 can be circular or elliptical in shape.

[0033] Furthermore, there are steps at the contact points between multiple support members 1 and the tray 3.

[0034] It should be noted that the second step hole 10 on different layer trays 3 can have different shapes and sizes to accommodate wafers of different specifications.

[0035] Example 2, as Figure 1-6 As shown, multiple support members 1 are internally fitted with connecting rods 2. The connecting rods 2 are connected to the top plate 6 circumferentially via threads / nuts or pins. The connecting rods 2 are welded and fixed to the bottom plate 5 circumferentially. The support members 1 are cylindrical in shape. Multiple through holes 9, which are circular or elliptical, are opened circumferentially on the top of the multi-layer support plate 3 and the top plate 6. The outer diameter of the support member 1 is larger than the diameter of the through holes 9 of the support plate 3, and the inner diameter of the support member 1 is larger than the outer diameter of the connecting rod 2. Therefore, gaps are left between the outer diameter of the support member 1 and the inner wall of the through holes 9, and between the inner diameter of the support member 1 and the outer diameter of the connecting rod 2. Multiple first stepped holes 8 are also equidistantly opened on the top and / or bottom of the multi-layer support plate 3. Multiple support members 1 can be fitted onto multiple first stepped holes 8. The connecting rod 2 passes through the first stepped holes 8 of the support plate 3, and the outer diameter of the connecting rod 2 is smaller than the inner diameter of the first stepped hole 8. Therefore, there is also a gap between the connecting rod 2 and the first stepped hole 8.

[0036] Furthermore, the top surface of the connecting rod 2 is in contact with the bottom surface of the top plate 6 or other connection methods are used; the length of the connecting rod 2 is greater than the sum of the lengths of the multi-layer support plate 3 and the multi-segment support 1, which further plays a role in releasing stress.

[0037] Furthermore, a fixing block 7 is fixed at the bottom center of the base plate 5. The fixing block 7 and the base plate 5 can be integrated. The fixing block 7 is used to connect the bottom with other parts of the vehicle and can be used to support the vehicle or drive the vehicle to move.

[0038] The effect achieved in Example 2 is that the pallet 3 will experience thermal expansion and contraction under high temperature. When thermal expansion and contraction occurs in the horizontal direction of the pallet 3, the gap between the inner wall of the through hole 9 on the pallet 3 and the connecting rod 2 can prevent interference between the thermal expansion and contraction of the pallet 3 and the connecting rod 2 due to the buffering effect of the through hole 9. The resulting thermal expansion and contraction stress can be released evenly in the horizontal direction. Similarly, since the gap between the outer diameter of the connecting rod 2 and the inner diameter of the support member 1 can prevent interference between the thermal expansion and contraction of the support member 1 and the connecting rod 2, the resulting thermal expansion and contraction stress can be released evenly in the horizontal direction. The gap between the connecting rod 2 and the first step hole 8 further releases the thermal expansion and contraction stress.

[0039] Similarly, in the vertical direction, since there is a gap between the support plate 3 and the top plate 6, when the support plate 3 experiences thermal expansion and contraction in the vertical direction, the gap at the top connection between the connecting rod 2 and the support member 1 can buffer it, preventing interference in the vertical direction and allowing the thermal expansion and contraction force generated to be released evenly in the vertical direction. A circular hole 11 is opened in the center of the support plate, which reduces the amount of material and, on the other hand, can release the stress generated by the support plate when the temperature changes to a certain extent while ensuring the strength of the support plate itself, thereby reducing the heat capacity in the middle of the support plate and preventing deformation under the thermal expansion and contraction effect.

[0040] Furthermore, the top of the connecting rod 2 and the top plate 6 are detachably connected. Even further, the top surface of the connecting rod 2 is attached to the bottom surface of the top plate 6 to serve as a limiting element. The connection and fixation between the connecting rod 2 and the top plate 6 are completed by means of threads / nuts or locking pins. The length of the connecting rod 2 is greater than the sum of the lengths of the multi-layer support plate 3 and the multi-segment support 1, which further serves to release stress.

[0041] Working principle: In actual use, multiple support members 1 support multiple trays 3, and then the wafer to be coated is placed inside the second step hole 10 on the tray 3. Then, the top plate 6 is installed on the top of multiple support members 1 through the connecting rod 2, so that multiple support members 1 and multiple trays 3 are connected into an integral frame. Then, the integral frame is placed inside the heating equipment to perform high-temperature coating on the wafer. Under high temperature, the pallet 3 will undergo thermal expansion and contraction. When thermal expansion and contraction occurs in the horizontal direction of the pallet 3, the gap between the inner wall of the through hole 9 on the pallet 3 and the connecting rod 2 can prevent interference between the thermal expansion and contraction of the pallet 3 and the connecting rod 3, thus allowing the generated thermal expansion and contraction stress to be released evenly in the horizontal direction. In the vertical direction, the gap between the pallet 3 and the top plate 6 can also buffer the thermal expansion and contraction of the pallet 3 in the vertical direction through the gap at the top connection between the connecting rod 2 and the support 1, preventing interference in the vertical direction and allowing the generated thermal expansion and contraction force to be released evenly in the vertical direction. A circular hole 11 is opened in the center of the pallet, which reduces material usage and, while ensuring the strength of the pallet itself, can release the stress generated by temperature changes to a certain extent, reducing the heat capacity in the middle of the pallet and preventing deformation under thermal expansion and contraction.

[0042] This utility model is not limited to the above-described embodiments. Anyone should know that structural changes made under the guidance of this utility model, and any technical solutions that are the same as or similar to this utility model, fall within the protection scope of this utility model. Technical aspects, shapes, and structures not described in detail in this utility model are all publicly known technologies.

Claims

1. A high-temperature coated wafer carrier, comprising multiple connecting rods (2), a base plate (5), a top plate (6), a multi-layer support plate (3), and multiple support segments (1), characterized in that: Multiple connecting rods (2) are fixedly distributed on the base plate (5). The top of each connecting rod (2) is connected to the top plate (6). Multiple through holes (9) are present on the multi-layered support plate (3). Each connecting rod (2) passes through the through hole (9) on the support plate (3). Multiple support segments (1) are hollow structures. Multiple support segments (1) are sleeved around the periphery of each connecting rod (2). The multi-layered support plate (3) is supported by multiple support segments (1). For the high-temperature coated wafer carrier, there is a gap between the uppermost tray (3) and the top plate (6), and / or, there is a gap between the connecting rod (2) and the inner wall of the through hole (9) on the multiple trays (3).

2. The high-temperature coated wafer carrier according to claim 1, characterized in that: Multiple connecting rods (2) are welded and fixed to the base plate (5) along the circumferential direction.

3. The high-temperature coated wafer carrier according to claim 1, characterized in that: The multiple connecting rods (2) are connected to the top plate (6) circumferentially by threads / nuts or snap pins.

4. The high-temperature coated wafer carrier according to claim 1, characterized in that: The support member (1) is cylindrical, and the outer diameter of the support member (1) is larger than the diameter of the through hole of the support plate (3). The inner diameter of the support member (1) is larger than the outer diameter of the connecting rod (2).

5. The high-temperature coated wafer carrier according to claim 1, characterized in that: The top and / or bottom of the plurality of trays (3) are provided with a plurality of first step holes (8) and a plurality of second step holes (10), the plurality of support members (1) are sleeved on the plurality of first step holes (8), and the coated wafer is placed on the second step holes (10).

6. The high-temperature coated wafer carrier according to claim 1, characterized in that: There is a gap between the outer diameter of the connecting rod (2) and the inner diameter of the support.

7. The high-temperature coated wafer carrier according to claim 1, characterized in that: The length of the connecting rod (2) is greater than the sum of the lengths of the multi-layered trays (3) and the multiple support segments (1).

8. The high-temperature coated wafer carrier according to claim 1, characterized in that: A circular hole (11) is provided in the center of the multi-layered tray (3).

Images