Silicon carbide wafer base of semiconductor laser annealing machine

Abstract

The utility model discloses a silicon carbide wafer base of a semiconductor laser annealing machine table, which comprises a base main body, a plurality of annular vacuum grooves are arranged on the base main body, the annular vacuum grooves are concentrically arranged by taking the center of the base main body as a circle center, a plurality of linear vacuum grooves are further arranged on the base main body, and the linear vacuum grooves are arranged in a crossed manner. And the intersection of the two is the center of the base main body. According to the utility model, the plurality of annular vacuum grooves and the plurality of linear vacuum grooves are arranged, 2% point contact is changed into more than 90% surface contact, vacuum and the adsorption force to a wafer are increased, the problem of wafer displacement is improved, the heat dissipation capability of the base to the wafer is increased, and the problem of wafer breakage caused by heat accumulation is improved.

Description

TECHNICAL FIELD

[0001] The utility model relates to a technical field of semiconductor, concretely relates to a silicon carbide wafer base of semiconductor laser annealing machine platform. BACKGROUND

[0002] The existing silicon carbide base is full of protruding support points (see Figure 1 and Figure 2 ), and the support point and wafer contact area ratio is 2%; the base temperature is generally 400 degrees Celsius, and plays the role of preheating before annealing and heat dissipation during annealing, and because small point support is adopted, the wafer and base contact area are not enough, which can lead to the following problems:

[0003] 1, the wafer and base are contacted together after vacuum adsorption, and 2% of the contact area leads to insufficient vacuum, and the wafer is prone to slight displacement in high-speed movement, leading to high breakage rate.

[0004] 2, when the wafer is laser annealed, the laser temperature on the wafer surface is above 1200 degrees Celsius, and the point-shaped support point wafer disc can easily lead to slow heat dissipation of the wafer during annealing, leading to heat accumulation and breakage. INVENTION CONTENTS

[0005] The utility model discloses a silicon carbide wafer base of semiconductor laser annealing machine platform to solve the technical problems of the prior art.

[0006] To achieve the above object, the utility model adopts the technical scheme of a silicon carbide wafer base of semiconductor laser annealing machine platform, which is characterized by comprising a base body, a plurality of annular vacuum grooves are formed on the base body, the annular vacuum grooves are concentric circles arranged with the center of the base body as the center, a plurality of straight-line vacuum grooves are also formed on the base body, and the straight-line vacuum grooves are arranged in a cross shape, and the intersection of the two is the center of the base body.

[0007] Further, the annular vacuum groove comprises at least four, and is evenly distributed.

[0008] Further, the straight-line vacuum groove comprises at least two, and is distributed in a cross shape.

[0009] Further, the annular vacuum groove and the straight-line vacuum groove are communicated with each other.

[0010] After adopting the above structure, the utility model has the beneficial effects that:

[0011] The utility model discloses a plurality of annular vacuum grooves and straight-line vacuum grooves are arranged, the 2% point contact is changed into more than 90% surface contact, the vacuum and the adsorption force of the wafer are increased, the wafer displacement problem is improved, and the heat dissipation capacity of the base to the wafer is increased, and the breakage problem caused by heat accumulation is improved. BRIEF DESCRIPTION OF DRAWINGS

[0012] Figure 1 The old base is shown in the schematic diagram;

[0013] Figure 2 The wafer is placed on the old base in the schematic diagram;

[0014] Figure 3 The structure of the utility model is shown in the schematic diagram.

[0015] Mark explanation:

[0016] 1 base body, 2 annular vacuum groove, 3 straight vacuum groove. Specific implementation

[0017] The utility model will be further described below in combination with the drawings.

[0018] In order to make the purpose, technical scheme and advantage of the utility model more clear and obvious, the utility model will be further described in detail below in combination with the drawings and specific implementation mode.It should be understood that the specific implementation mode described here is only used to explain the utility model, and is not used to limit the utility model.

[0019] Reference Figure 3 A semiconductor laser annealing machine carbonized silicon wafer base, including base body 1, multiple annular vacuum grooves 2 are set up on base body 1, and the annular vacuum grooves 2 are concentric circles with the center of base body as the center, multiple two straight vacuum grooves 3 are also set up on base body 1, and the two straight vacuum grooves 3 are cross-distributed, and the intersection of the two is the center of base body.Specifically, multiple annular vacuum grooves 2 and straight vacuum grooves 3 are set up on base body 1, 2% point contact is changed into more than 90% surface contact, vacuum and the adsorption force to wafer are increased, wafer displacement problem is improved, and the heat accumulation caused by the heat accumulation is improved.

[0020] In the embodiment, the annular vacuum groove 2 includes at least four, and is evenly distributed, so that the adsorption is evenly distributed, so as to ensure that the wafer is adsorbed and fixed by sufficient adsorption force, and the annular vacuum groove 2 can be covered by the wafer.

[0021] In the embodiment, the straight vacuum groove 3 includes at least two, and is cross-distributed, so that the adsorption is evenly distributed, so as to ensure that the wafer is adsorbed and fixed by sufficient adsorption force, and the annular vacuum groove 2 is further improved in cooperation with the annular vacuum groove 2.

[0022] In the embodiment, the annular vacuum groove 2 and the straight vacuum groove 3 are communicated with each other, so that the adsorption force between the two is communicated, so that the wafer is better adsorbed.

[0023] The above merely aims to explain the technical scheme of the present application and is not intended to limit the present application. Other modifications or equivalent replacements made by those skilled in the art to the technical scheme of the present application, as long as they do not depart from the spirit and scope of the present application, should be included in the scope of the claims of the present application.

Claims

1. A semiconductor laser annealing machine silicon carbide wafer base, characterized by: The base body is provided with a plurality of annular vacuum grooves, which are concentrically arranged with the center of the base body as the center, and a plurality of straight vacuum grooves, which are arranged in a cross shape and intersect at the center of the base body.

2. The semiconductor laser annealing machine silicon carbide wafer base according to claim 1, wherein: The annular vacuum grooves are at least four in number and are evenly distributed.

3. The SiC wafer susceptor for a semiconductor laser annealing machine of claim 1, wherein: The straight vacuum grooves are at least two in number and are arranged in a cross shape.

4. The SiC wafer susceptor for a semiconductor laser annealing tool of claim 1, wherein: The annular vacuum grooves and the straight vacuum grooves are in communication with each other.

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