Power field effect transistor based on silicon carbide

Abstract

The utility model provides a power field effect transistor based on silicon carbide, and belongs to the technical field of transistors. Comprising a silicon carbide transistor and a welding plate, the silicon carbide transistor is stably connected with a plurality of pins, the welding plate is provided with a plurality of mounting grooves, the mounting grooves correspond to the pins, and the pins are stably mounted in the mounting grooves; and the number of the elastic sheets is multiple, the multiple elastic sheets are located below the multiple pins respectively, the elastic sheets are stably installed in the installation grooves, and the elastic sheets make electrical contact with the pins. According to the utility model, through the cooperation of the tin plate, the conducting rod, the copper plate, the elastic sheet and other structures, the purpose of improving the connection stability of the silicon carbide power field effect transistor and the circuit board is achieved; the purpose that the silicon carbide power field effect transistor can be rapidly and conveniently replaced when damaged is achieved.

Description

Technical Field

[0001] This utility model relates to the field of transistor technology, and in particular to a power field-effect transistor based on silicon carbide. Background Technology

[0002] Silicon carbide power field-effect transistors (SCTs), as a new type of power semiconductor device, have excellent performance such as high switching speed, low on-resistance, and high temperature resistance. They are widely used in many fields such as new energy vehicles, photovoltaics, and industrial control. They can achieve efficient power conversion and control under high voltage and high current operating conditions, providing strong support for the high-performance operation of modern electronic equipment.

[0003] In the field of power electronics, silicon carbide power MOSFETs (SMTs) are commonly mounted using surface mount technology. This involves printing solder paste onto a circuit board, placing the transistor, and then reflow soldering it. However, the strength of this connection is highly dependent on factors such as solder paste quality fluctuations, inaccurate printing processes, improper reflow soldering, differences in thermal expansion coefficients, high-frequency vibrations, and environmental influences. Problems with any of these factors can lead to a weak connection between the SMT and the circuit board. Furthermore, because the leads of SMTs are typically higher than the solder joints on the circuit board, poor contact between the leads and the solder paste can easily occur during soldering, affecting the soldering quality. Simultaneously, the higher leads are more prone to stress concentration under external forces or temperature changes, making the connection more fragile. During transistor operation, loose connections can affect the stability of current transmission, reduce the performance and reliability of electronic devices, increase maintenance costs, and even shorten product lifespan. Utility Model Content

[0004] The technical problem to be solved by this utility model is to provide a silicon carbide-based power MOSFET, which solves the problems of weak connection when silicon carbide power MOSFETs are installed using surface mount technology, and the inconvenience of replacing silicon carbide power MOSFETs when they are damaged.

[0005] Technical Solution: To achieve the above objectives, this utility model is implemented through the following technical solution: A power field-effect transistor based on silicon carbide, comprising a silicon carbide transistor and a bonding plate. Multiple pins are stably connected to the silicon carbide transistor. Multiple mounting slots are formed on the bonding plate, corresponding to the pins, and the pins are stably mounted within the mounting slots. Multiple elastic sheets are provided, each positioned below a pin, and are stably mounted within the mounting slots, making electrical contact with the pins. Multiple copper plates are provided, each positioned directly below a pair of elastic sheets, making electrical contact with the elastic sheets. A conductive rod is stably connected to the side of the copper plates away from the elastic sheets. Multiple auxiliary blocks are provided, each stably connected below the bonding plate. Multiple solder plates are provided, stably connected to the auxiliary blocks, with the solder plates positioned on the side of the auxiliary blocks away from the bonding plate. The end of the conductive rod away from the copper plate penetrates the solder plate, and the end face of the conductive rod away from the copper plate is flush with the end face of the solder plate away from the auxiliary block. The depth and width of the mounting slots should correspond to the pins. The dimensions of the components must be matched, and the error range should be controlled within a very small range to ensure that the pins can be accurately inserted into the mounting slot. The thickness of the elastic sheet should be moderate, with sufficient elastic deformation capacity. The conductivity of the elastic sheet should meet the requirements of the circuit, and the resistance value should be as small as possible. The thickness of the copper plate should be reasonably selected according to the current and heat dissipation requirements to ensure that the performance is not affected by overheating during operation. The contact area between the copper plate and the elastic sheet should be as large as possible to reduce contact resistance. The diameter and length of the conductive rod should be reasonably selected according to the current and layout requirements to ensure that the current can be transmitted smoothly. The connection between the conductive rod and the copper plate can be achieved by welding, crimping, etc., and the connection strength should meet the requirements. The thickness of the tin plate should be reasonably selected according to the welding and heat dissipation requirements to ensure that the solder can be fully melted during the welding process to form a strong weld connection. The connection between the tin plate and the auxiliary block should be firm and reliable, and can be achieved by welding, screw fixing, etc. The end face of the conductive rod and the end face of the tin plate should be flat and smooth, without burrs or unevenness.

[0006] In a further embodiment, multiple pressure blocks are provided, each located in a plurality of mounting slots. The pressure blocks are slidably connected within the mounting slots and are used to press the pins. The material of the pressure blocks should have a certain degree of hardness and wear resistance to ensure that they will not deform or be damaged during long-term use. The sliding track of the pressure blocks should be smooth and flat without any jamming to ensure smooth operation.

[0007] In a further embodiment, a groove is formed in the mounting groove and is slidably connected to the pressure block. The groove is used to limit the sliding trajectory of the pressure block. The size and shape of the groove should match the pressure block, and the error range should be controlled within a very small range. The surface of the groove should be smoothed to reduce the friction between the pressure block and the groove.

[0008] In a further embodiment, a slot is formed inside the pressure block; a block is slidably connected inside the welding plate, and the block engages with the pressure block through the slot. The block is used for positioning the pressure block. The dimensions of the slot and the block should be precisely designed to ensure the secure engagement. The sliding mechanism of the block should be flexible and reliable, and can quickly engage or disengage with the slot when needed.

[0009] In a further embodiment, multiple springs are provided. One end of the spring is stably connected to the welding plate, and the other end is stably connected to the locking block. The spring is used for locking block reset. The material of the spring should have good elasticity and fatigue resistance to ensure that it will not lose its elasticity during long-term use. The installation position of the spring should be accurate to ensure that it can function properly.

[0010] In a further embodiment, at least two flexible plates are provided. The flexible plates are stably connected to the welding plate. A protrusion is provided at the end of the flexible plate away from the welding plate. The flexible plates are used for limiting the silicon carbide transistor. The material of the flexible plates should have a certain degree of elasticity and toughness to ensure that they will not break or be damaged during use. The shape and size of the protrusion should be designed according to the shape of the transistor to ensure the accuracy and reliability of the limiting.

[0011] In a further embodiment, the lower surface of the tin plate is at most flush with the lower surface of the silicon carbide transistor, wherein the height difference between the lower surface of the tin plate and the lower surface of the silicon carbide transistor should be controlled within a very small range to ensure the consistency of soldering quality and appearance.

[0012] Beneficial effects: 1. By stably connecting the tin plate and the auxiliary block, multiple conductive rods connect the copper plate and the tin plate. The pins are installed in the mounting slot of the soldering board and an elastic sheet is set below to make electrical contact with the copper plate. At the same time, a flexible clamping plate is set to limit the silicon carbide transistor. The pressure block squeezes the pins in the mounting slot and, through the cooperation of the clamping block and the clamping slot and the spring-assisted reset, the connection stability between the silicon carbide power field effect transistor and the circuit board is improved. This reduces the loosening of the connection caused by factors such as solder paste quality fluctuations, inaccurate printing process, improper reflow soldering process, differences in thermal expansion coefficient, high-frequency vibration and environmental influence.

[0013] 2. By stably connecting the flexible card plate and the welding plate, the silicon carbide transistor can be limited. The pressure block slides in the mounting groove and can be positioned by the card block and the slot, as well as the spring-assisted reset structure. This achieves the purpose of quick and convenient replacement when the silicon carbide power field effect transistor is damaged. Attached Figure Description

[0014] To more clearly illustrate the technical solutions in this utility model or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0015] Figure 1 This is a schematic diagram of the structure of this utility model.

[0016] Figure 2 for Figure 1 A schematic diagram of the main cross-section.

[0017] Figure 3 for Figure 1 A top-down sectional view of the structure.

[0018] Figure 4 for Figure 2 A schematic diagram of the structure at point A.

[0019] Figure 5 for Figure 3 A schematic diagram of the structure at point B.

[0020] The reference numerals in the figure are as follows: 1. Silicon carbide transistor; 101. Pin; 2. Soldering plate; 201. Mounting groove; 2011. Slide groove; 3. Flexible clamping plate; 4. Pressure block; 401. Slot; 5. Clamping block; 6. Spring; 7. Elastic sheet; 8. Copper plate; 801. Conductive rod; 9. Auxiliary block; 901. Tin plate. Detailed Implementation

[0021] To make the objectives, technical solutions, and advantages of this utility model clearer, the technical solutions in this utility model are described clearly and completely. Obviously, the described embodiments are only some, not all, of the embodiments in this utility model. All other embodiments obtained by those skilled in the art based on the embodiments in this utility model without creative effort are within the scope of protection of this utility model.

[0022] This application provides a silicon carbide-based power MOSFET, solving the technical problems of unstable connections and difficulty in replacing damaged silicon carbide power MOSFETs when mounted using surface mount technology. In practical use, it achieves the goals of secure mounting and easy replacement of damaged silicon carbide power MOSFETs.

[0023] To better understand the above technical solutions, the following will provide a detailed explanation of the technical solutions in conjunction with the accompanying drawings and specific implementation methods.

[0024] Reference Figure 1-5 A silicon carbide-based power field-effect transistor includes a silicon carbide transistor 1 and a bonding plate 2. The silicon carbide transistor 1 has multiple pins 101 stably connected to it. The bonding plate 2 has multiple mounting slots 201, each corresponding to a pin 101, and the pins 101 are stably mounted within the mounting slots 201. Multiple elastic sheets 7 are provided, each located below a plurality of pins 101, and are stably mounted within the mounting slots 201, making electrical contact with the pins 101. Multiple copper plates 8 are provided, each located below a plurality of pins 101. Directly below the elastic sheet 7, the copper plate 8 is in electrical contact with the elastic sheet 7; a conductive rod 801 is stably connected to the side of the copper plate 8 away from the elastic sheet 7; multiple auxiliary blocks 9 are provided, and the multiple auxiliary blocks 9 are stably connected to the bottom of the soldering plate 2; multiple tin plates 901 are provided, and the multiple tin plates 901 are stably connected to the auxiliary blocks 9, and the tin plates 901 are located on the side of the auxiliary blocks 9 away from the soldering plate 2; the end of the conductive rod 801 away from the copper plate 8 passes through the tin plate 901, and the end face of the end of the conductive rod 801 away from the copper plate 8 is flush with the end face of the tin plate 901 away from the auxiliary block 9.

[0025] The silicon carbide transistor 1 has its pin 101 engaged with the mounting groove 201 on the soldering plate 2. The elastic sheet 7 below the pin 101 is in electrical contact with the copper plate 8. The copper plate 8 is connected to the tin plate 901 on the auxiliary block 9 through the conductive rod 801, which achieves a stable electrical connection between the silicon carbide transistor 1 and the circuit board. The end face of the conductive rod 801 is flush with the end face of the tin plate 901, which further improves the flatness and stability of the connection.

[0026] Multiple pressure blocks 4 are provided, and the multiple pressure blocks 4 are respectively located in the multiple mounting grooves 201. The pressure blocks 4 are slidably connected in the mounting grooves 201, and the pressure blocks 4 are used to press the pins 101.

[0027] The pressure block 4 slides within the mounting groove 201 and engages with the pin 101, thereby compressing the pin 101 to enhance the contact pressure between the pin 101 and the elastic sheet 7, thus improving the stability of the electrical connection.

[0028] The slide groove 2011 is formed in the mounting groove 201. The slide groove 2011 is slidably connected to the pressure block 4. The slide groove 2011 is used to limit the sliding trajectory of the pressure block 4.

[0029] By using the groove 2011 in conjunction with the pressure block 4, the sliding trajectory of the pressure block 4 is limited, ensuring that the pressure block 4 accurately presses the pin 101.

[0030] The slot 401 is formed inside the pressure block 4; the block 5 is slidably connected to the welding plate 2. The block 5 is engaged with the pressure block 4 through the slot 401 and is used for positioning the pressure block 4.

[0031] The slot 401 is opened in the pressure block 4 and cooperates with the card block 5 which is slidably connected in the welding plate 2 to achieve the positioning of the pressure block 4 and prevent the pressure block 4 from loosening.

[0032] Multiple springs 6 are provided. One end of each spring 6 is stably connected to the welding plate 2, and the other end is stably connected to the locking block 5. The spring 6 is used to reset the locking block 5.

[0033] The spring 6 connects the welding plate 2 and the locking block 5, which enables the locking block 5 to be reset when needed, so as to release the positioning of the pressure block 4 and facilitate operation.

[0034] At least two flexible card plates 3 are provided. The flexible card plates 3 are stably connected to the welding plate 2. A protrusion is provided at the end of the flexible card plate 3 away from the welding plate 2. The flexible card plate 3 is used to limit the silicon carbide transistor 1.

[0035] The flexible card plate 3 is used in conjunction with the welding plate 2. The bumps on the flexible card plate 3 are used in conjunction with the silicon carbide transistor 1 to limit the position of the silicon carbide transistor 1 and prevent it from shifting during operation.

[0036] The lower surface of the tin plate 901 is at most flush with the lower surface of the silicon carbide transistor 1.

[0037] By matching the positional relationship between the tin plate 901 and the silicon carbide transistor 1, a large contact area between the tin plate 901 and the circuit board is ensured during the soldering process, thereby improving the soldering strength and avoiding any impact on the installation and use of the transistor.

[0038] During use, firstly, the pin 101 of the silicon carbide transistor 1 is inserted into the corresponding mounting slot 201 on the soldering plate 2; the elastic sheet 7 below the pin 101 makes electrical contact with the copper plate 8, and the copper plate 8 is connected to the tin plate 901 on the auxiliary block 9 through the conductive rod 801, ensuring the initial stability of the electrical connection; next, the pressure block 4 is placed into the mounting slot 201, and the pressure block 4 slides along the slide groove 2011 and presses the pin 101, increasing the contact pressure between the pin 101 and the elastic sheet 7, and improving the stability of the electrical connection; the locking block 5 is engaged with the pressure block 4 through the locking slot 401 under the action of the spring 6, positioning the pressure block 4; the flexible locking plate 3 holds the silicon carbide transistor... 1. Limiting is implemented to prevent displacement during operation; during welding, the end face of the conductive rod 801 away from the copper plate 8 is flush with the end face of the tin plate 901 away from the auxiliary block 9, ensuring the flatness and firmness of the weld; at the same time, the lower surface of the tin plate 901 is flush with the lower surface of the silicon carbide transistor 1 at most, ensuring a large contact area between the tin plate 901 and the circuit board during the welding process, further improving the firmness of the weld. When the silicon carbide power field effect transistor is damaged and needs to be replaced, the fixing of the pin 101 is released by sliding the pressure block 4, and then the flexible card plate 3 is pried outward, and then the silicon carbide transistor 1 can be removed from the welding plate 2.

[0039] The figures shown in the accompanying drawings are illustrative and are intended only to more intuitively demonstrate the key structure and connection relationships of a silicon carbide-based power MOSFET of this invention. In practical applications, the appearance and size of the device can be adjusted and optimized according to specific needs.

[0040] This utility model encompasses any substitutions, modifications, equivalent methods, and solutions made within the spirit and scope of this utility model. To provide the public with a thorough understanding of this utility model, specific details have been described in detail in the above preferred embodiments; however, those skilled in the art can fully understand this utility model even without these detailed descriptions. Furthermore, to avoid unnecessary confusion regarding the essence of this utility model, well-known methods, processes, procedures, components, and circuits have not been described in detail.

[0041] The above description is only a preferred embodiment of the present utility model. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the principle of the present utility model, and these improvements and modifications should also be considered within the protection scope of the present utility model.

Claims

1. A silicon carbide-based power field-effect transistor, comprising a silicon carbide transistor (1) and a bonding plate (2), characterized in that: The silicon carbide transistor (1) is stably connected to a plurality of pins (101), and the welding plate (2) is provided with a plurality of mounting slots (201). The mounting slots (201) correspond to the pins (101), and the pins (101) are stably mounted in the mounting slots (201). Multiple elastic sheets (7) are provided, and the multiple elastic sheets (7) are respectively located below multiple pins (101). The elastic sheets (7) are stably installed in the mounting groove (201), and the elastic sheets (7) are in electrical contact with the pins (101). Multiple copper plates (8) are provided, and the multiple copper plates (8) are respectively located directly below the multiple elastic sheets (7), and the copper plates (8) are in electrical contact with the elastic sheets (7); The conductive rod (801) is stably connected to the side of the copper plate (8) away from the elastic sheet (7); Multiple auxiliary blocks (9) are provided, and the multiple auxiliary blocks (9) are stably connected to the bottom of the welding plate (2); Solder plates (901) are provided in multiple ways, and multiple solder plates (901) are stably connected to the auxiliary block (9). The solder plates (901) are located on the side of the auxiliary block (9) away from the soldering plate (2). The end of the conductive rod (801) away from the copper plate (8) passes through the tin plate (901), and the end face of the end of the conductive rod (801) away from the copper plate (8) is flush with the end face of the tin plate (901) away from the auxiliary block (9).

2. The power field-effect transistor based on silicon carbide according to claim 1, characterized in that, Also includes: Multiple pressure blocks (4) are provided, and the multiple pressure blocks (4) are respectively located in the multiple mounting slots (201). The pressure blocks (4) are slidably connected in the mounting slots (201). The pressure blocks (4) are used to press the pins (101).

3. A silicon carbide-based power field-effect transistor according to claim 2, characterized in that, Also includes: A groove (2011) is formed in the mounting groove (201). The groove (2011) is slidably connected to the pressure block (4). The groove (2011) is used to limit the sliding trajectory of the pressure block (4).

4. A silicon carbide-based power MOSFET according to claim 2, characterized in that, Also includes: The card slot (401) is located inside the pressure block (4); The card block (5) is slidably connected inside the welding plate (2). The card block (5) is engaged with the pressure block (4) through the card slot (401). The card block (5) is used for positioning the pressure block (4).

5. A silicon carbide-based power MOSFET according to claim 4, characterized in that, Also includes: Multiple springs (6) are provided. One end of the spring (6) is stably connected to the welding plate (2), and the other end is stably connected to the locking block (5). The spring (6) is used to reset the locking block (5).

6. A silicon carbide-based power MOSFET according to claim 1, characterized in that, Also includes: At least two flexible card plates (3) are provided. The flexible card plates (3) are stably connected to the welding plate (2). A protrusion is provided at the end of the flexible card plate (3) away from the welding plate (2). The flexible card plate (3) is used to limit the position of the silicon carbide transistor (1).

7. A power MOSFET based on silicon carbide according to claim 1, characterized in that: The lower surface of the tin plate (901) is at most flush with the lower surface of the silicon carbide transistor (1).

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