Coating device and coating equipment
By using alternating current to form an alternating electric field in the PVD coating apparatus, low-energy particles are deposited on the product, while high-energy particles consume energy, thus solving the sputtering damage problem and achieving a low-damage, high-quality coating effect.
Patent Information
- Application Number
- CN202423318414.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-31
- Publication Date
- 2025-11-25
- Estimated Expiration
- 2034-12-31
AI Technical Summary
In the PVD coating process, problems such as sputtering damage to the substrate material, physical and thermal damage, increased surface roughness, and changes in microstructure are difficult to effectively solve.
The coating device using alternating current forms an alternating electric field between the first and second targets, ionizing the process gas to form plasma. Low-energy particles are deposited on the product, while high-energy particles move back and forth in the horizontal direction, consuming energy and finally falling onto the product, thus reducing physical and thermal damage.
It reduces physical and thermal damage to products, improves the density and uniformity of the film, enhances the adhesion between the film and the product, reduces the risk of performance changes in temperature-sensitive materials, and improves the utilization rate of the target material and the stability of the coating.
Smart Images
Figure CN223592805U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the field of semiconductor or photovoltaic material processing, and in particular to a coating device and a coating equipment. BACKGROUND
[0002] Physical vapor deposition (PVD) coating exists sputtering damage, which mainly refers to the adverse effects on the coated material (usually referred to as the substrate) caused by sputtering, a physical process, during the PVD coating process. There can be several possibilities.
[0003] First, argon ions, target particles and other high-energy particles may also be sputtered onto the substrate surface while bombarding the target. These high-energy particles have high energy and may cause physical damage to the substrate surface. For example, for some low-hardness substrate materials such as plastics, certain polymers, etc., the bombardment of high-energy particles may cause scratches, pits and other defects on the surface. For substrates such as semiconductor materials that require high surface quality, the bombardment of high-energy particles may damage the crystal structure and introduce defects, thereby affecting the electrical and optical properties. For example, in semiconductor device manufacturing, sputtering damage during PVD coating may cause performance degradation, shortened life, and other problems.
[0004] Second, during the sputtering process, the bombardment of high-energy particles will cause the temperature of the target and the substrate surface to rise. If the temperature rises too high, it may cause thermal damage to the substrate material. Thermal effects may also cause thermal expansion and contraction of the substrate material, resulting in stress, which may cause the substrate to crack, deform, and other problems.
[0005] Third, the substrate surface may experience an increase in roughness. The originally smooth surface may become rough and uneven after sputtering damage, affecting subsequent performance. For example, when coating the surface of an optical element, sputtering damage that causes an increase in surface roughness will reduce the transmittance and reflectance of the optical element, affecting its optical performance. In addition, there may be changes in the microstructure, such as changes in grain size and damage to the crystal structure. These changes in the microstructure may affect the mechanical and electrical properties of the substrate material. For example, for metal materials, changes in grain size may change their mechanical properties such as hardness and strength.
[0006] Therefore, how to reduce sputtering damage during PVD coating has become a problem to be solved. Invention content
[0007] To solve the above technical problems, the present application is proposed. The embodiments of the present application provide a coating device and a coating equipment.
[0008] In a first aspect, an embodiment of the present application provides a coating device, comprising: a process cavity, the process cavity having a process chamber; a gas inlet assembly in communication with the process chamber and configured to deliver a process gas to the process chamber; a first target disposed in the process chamber; a second target disposed in the process chamber and spaced apart from the first target in a horizontal direction; a sputtering power supply having a first output and a second output, the first output being electrically connected to the first target, and the second output being electrically connected to the second target, the sputtering power supply being configured to provide an alternating current to the first target and the second target so that the first target and the second target alternately serve as a cathode and an anode; and wherein a processing area for coating a product is formed below the first target and the second target.
[0009] In some embodiments, the first target has a first cavity inside, and the second target has a second cavity inside, and when the sputtering power supply provides an alternating current to the first target and the second target, an alternating electric field is formed between the first target and the second target, the alternating electric field can ionize the process gas into plasma, the plasma can impact the first target and the second target, and the first target and the second target can sputter target particles; and wherein the coating device further comprises: two groups of magnet assemblies disposed in the first cavity and the second cavity, respectively, and configured to guide the target particles and the plasma.
[0010] In some embodiments, the magnet assembly comprises: at least three magnets arranged in sequence, each magnet having oppositely disposed first and second ends, the arrangement direction of the at least three magnets being crossed with the direction in which each magnet points from the first end to the second end, and the polarities of the first and second ends of each magnet being opposite; wherein the at least three magnets comprise at least one first magnet, at least one second magnet, and at least one third magnet, the second magnet being disposed between the first magnet and the third magnet, the polarity of the first end of the first magnet being the same as the polarity of the first end of the third magnet, and the polarity of the first end of the first magnet being opposite to the polarity of the first end of the second magnet.
[0011] In some embodiments, the shapes of the vertical sections of the first target and the second target in the horizontal direction are both circular ring shapes, the magnets in the magnet assembly disposed in the first cavity are arranged along the circumference of the first target, and the magnets in the magnet assembly disposed in the second cavity are arranged along the circumference of the second target; wherein one group of magnet assemblies is disposed on the side of the first cavity close to the second target, and the other group of magnet assemblies is disposed on the side of the second cavity close to the first target; or one group of magnet assemblies is disposed at the bottom of the first cavity, and the other group of magnet assemblies is disposed at the bottom of the second cavity; or one group of magnet assemblies is disposed obliquely below the side of the first cavity close to the second target, and the other group of magnet assemblies is disposed obliquely below the side of the second cavity close to the first target.
[0012] In some embodiments, the coating device further comprises two cathode adjusting assemblies connected to the process chamber and respectively extending into the first cavity and the second cavity; two magnetic shafts respectively arranged in one-to-one correspondence with the two cathode adjusting assemblies, each magnetic shaft being connected to a corresponding cathode adjusting assembly and capable of being driven by the corresponding cathode adjusting assembly to ascend, descend and rotate; and two groups of magnet assemblies respectively connected to the two magnetic shafts.
[0013] In some embodiments, the coating device further comprises an auxiliary anode arranged in the process chamber and located between the first target material and the second target material; a carrier arranged in the processing area and configured to carry the product; and a bias power supply having a first anode connection end and a first cathode connection end, the first anode connection end being electrically connected to the process chamber, and the first cathode connection end being electrically connected to the carrier.
[0014] In some embodiments, the first cavity and the second cavity are both provided with cooling liquid, and the two groups of magnet assemblies are respectively immersed in the cooling liquid in the first cavity and the cooling liquid in the second cavity.
[0015] In some embodiments, the coating device further comprises a protective cover arranged between the first target material and the process chamber and between the second target material and the process chamber and configured to block target material particles sputtered from the first target material and the second target material from impacting the process chamber.
[0016] In a second aspect, an embodiment of the present application provides a coating device, comprising: a loading device configured to receive and transport a product; a heating device in communication with the loading device and configured to receive the product transported by the loading device and heat the product; a first buffering device in communication with the heating device and configured to receive the product heated by the heating device and adjust the transport speed of the heated product; at least one coating device according to any one of the first aspect in communication with the first buffering device and configured to receive the product transported by the first buffering device and coat the product; a cooling device in communication with the coating device and configured to receive the product coated by the coating device and cool the coated product; and an unloading device in communication with the cooling device and configured to receive the product cooled by the cooling device and transport the cooled product to a next process.
[0017] In some embodiments, the number of coating devices is at least two, a first coating device is in communication with the first buffering device, and a last coating device is in communication with the cooling device, the positions and / or angles of the two groups of magnet assemblies of at least one coating device in the first cavity and the second cavity are different from those of the two groups of magnet assemblies of other coating devices except the at least one coating device; and the coating device further comprises a second buffering device connected between two adjacent coating devices and configured to isolate the two adjacent coating devices.
[0018] The coating apparatus and equipment proposed in this application provide alternating current to a first target and a second target, creating an alternating electric field between them. This alternating electric field ionizes the process gas to form plasma. The plasma then impacts the first and second targets, causing them to sputter target particles (including target atoms, molecules, and ions). Sputtered particles farther from the center of the alternating electric field are less affected and have lower energy; therefore, these low-energy particles fall onto the product within the processing area. Sputtered particles closer to the center of the alternating electric field are more affected and have higher energy. Because the first and second targets alternately act as cathodes and anodes, the direction of the alternating electric field constantly changes. Therefore, these high-energy particles move back and forth horizontally, impacting the first and second targets and consuming energy. Eventually, the energy of these high-energy particles decreases, causing them to fall onto the product within the processing area. Therefore, this structure allows most of the sputtered particles falling onto the product within the processing area to have low energy, thereby reducing physical and thermal damage to the product. Attached Figure Description
[0019] The above and other objects, features, and advantages of this application will become more apparent from the more detailed description of the embodiments of this application in conjunction with the accompanying drawings. The drawings are provided to further illustrate the embodiments of this application and form part of the specification. They are used together with the embodiments of this application to explain this application and do not constitute a limitation thereof. In the drawings, the same reference numerals generally represent the same components or steps.
[0020] Figure 1 The diagram shown is a schematic diagram of the coating apparatus provided in an exemplary embodiment of this application.
[0021] Figure 2 The image shown is an exemplary embodiment of this application. Figure 1 The enlarged view of the coating apparatus shown in region A.
[0022] Figure 3 The diagram shown is a structural schematic of a magnet assembly provided in an exemplary embodiment of this application.
[0023] Figure 4 The diagram shown is a structural schematic of a coating apparatus provided in another exemplary embodiment of this application.
[0024] Figure 5 The diagram shown is a structural schematic of a coating apparatus provided in another exemplary embodiment of this application.
[0025] Figure 6 The diagram shown is a structural schematic of a coating apparatus provided in an exemplary embodiment of this application.
[0026] Figure 7 Fig. 1 shows a schematic diagram of a coating device according to an example embodiment of the present application.
[0027] Figure 8 Fig. 2 shows a schematic diagram of a coating device according to another example embodiment of the present application.
[0028] Reference signs:
[0029] 100, coating device; 101, process cavity; 102, gas inlet assembly; 1021, gas inlet pipeline; 1022, gas inlet control flow meter; 1023, gas premixer; 1024, gas distribution integrated pipeline; 103, first target material; 1031, first cavity; 104, second target material; 1041, second cavity; 105, sputtering power supply; 106, carrier plate; 107, magnet assembly; 1071, magnet; 10711, first end; 10712, second end; 10713, first magnet; 10714, second magnet; 10715, third magnet; 108, cathode adjustment assembly; 109, magnetic axis; 110, cathode integrated assembly; 111, auxiliary anode; 112, bias voltage power supply; 113, bias voltage power supply controller; 114, protective cover; 115, sputtering power supply controller; 200, coating device; 201, loading device; 202, heating device; 2021, heating wire; 203, first buffer device; 204, cooling device; 2041, cooling pipeline; 205, unloading device; 206, pump mechanism; 207, transmission mechanism; 208, door lock device; 209, second buffer device. DETAILED DESCRIPTION
[0030] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work fall within the scope of protection of the present application.
[0031] Summary of the application
[0032] In a conventional PVD coating process, when a film layer with high photoelectric performance requirement is prepared, the crystallinity of sputtering film formation is not uniform, and the stress is too large. Therefore, when a soft substrate or a material with high requirement is prepared, the non-damage requirement of the film layer is higher, and therefore the current mainstream process is mainly prepared by the method of plasma enhanced chemical vapor deposition (PECVD).
[0033] In addition, during the PVD coating process, sputtering damage can be reduced in the following ways.
[0034] 1. Optimize process parameters.
[0035] 1) Adjust the sputtering power, gas pressure, temperature and other process parameters to reduce the energy and bombardment intensity of high-energy particles, thereby reducing the damage to the substrate. For example, reducing the sputtering power can reduce the generation of high-energy particles, and reducing the gas pressure can reduce the collision frequency and energy of high-energy particles, thereby reducing the degree of sputtering damage.
[0036] 2) Control the coating time to avoid excessive sputtering that can cause the substrate temperature to be too high and the damage to be aggravated. According to different substrate materials and coating requirements, the coating time is reasonably selected to reduce sputtering damage while ensuring the quality of the film layer.
[0037] 2. Select appropriate target materials and substrate materials.
[0038] 1) Select target materials that are compatible with the substrate materials to reduce the reaction and diffusion of target atoms with the substrate materials during sputtering, thereby reducing the degree of sputtering damage. For example, for some substrate materials that are easily oxidized, a target material with good oxidation resistance can be selected to avoid oxidation reactions during sputtering that can cause damage to the substrate.
[0039] 2) For some substrate materials that require high surface quality, a target material with lower hardness and smaller particle size can be selected to reduce the damage to the substrate surface caused by target particles during sputtering.
[0040] Although sputtering damage can be reduced by optimizing process parameters, this method has limited ability to reduce sputtering damage, and the process quality still cannot meet the requirements of functional film layers such as perovskite materials, therefore, how to reduce sputtering damage during the PVD coating process is very important.
[0041] In view of this, this application proposes a coating apparatus and coating equipment. A sputtering power source provides alternating current to a first target and a second target, creating an alternating electric field between them. This alternating electric field ionizes the process gas to form plasma. The plasma impacts the first and second targets, causing them to sputter target particles (including target atoms, molecules, and ions). Sputtered particles farther from the center of the alternating electric field are less affected and have lower energy; therefore, these low-energy particles fall onto the product within the processing area. Sputtered particles closer to the center of the alternating electric field are more affected and have higher energy. Because the first and second targets alternately act as cathode and anode, the direction of the alternating electric field constantly changes. Therefore, these high-energy particles move back and forth horizontally, impacting the first and second targets, thus consuming energy. Eventually, the energy of these high-energy particles decreases, causing them to fall onto the product within the processing area. Therefore, this structure allows most of the sputtered particles falling onto the product within the processing area to have low energy, thereby reducing physical and thermal damage to the product.
[0042] Exemplary apparatus
[0043] Figure 1 The diagram shown is a schematic representation of the coating apparatus provided in an exemplary embodiment of this application. Figure 2 The image shown is an exemplary embodiment of this application. Figure 1 The enlarged view of the coating apparatus shown in region A.
[0044] like Figure 1 As shown, this application provides a coating apparatus 100, which includes: a process chamber 101, an air inlet assembly 102, a first target 103, a second target 104, and a sputtering power supply 105. The process chamber 101 has a process cavity. The air inlet assembly 102 communicates with the process cavity and is configured to supply process gas to the process cavity. The first target 103 is disposed within the process cavity. The second target 104 is disposed within the process cavity and is positioned horizontally relative to the first target 103 (e.g., along the same direction). Figure 1 The sputtering power supply 105 is spaced apart (as shown in the X direction). It has a first output terminal and a second output terminal. The first output terminal is electrically connected to a first target 103, and the second output terminal is electrically connected to a second target 104. The sputtering power supply 105 is configured to provide alternating current to the first target 103 and the second target 104, so that the first target 103 and the second target 104 alternately act as cathode and anode to each other. A processing area for coating the product is formed below the first and second targets.
[0045] Exemplarily, the process gas can include an inert gas for generating plasma and / or a reaction gas participating in the reaction coating, such as the process gas can include at least one of argon, argon-hydrogen, oxygen.
[0046] Exemplarily, the sputtering power source 105 is a medium frequency power source.
[0047] Exemplarily, the product is a silicon wafer, a wafer, a battery piece, or a glass substrate.
[0048] Exemplarily, the gas inlet assembly 102 includes a gas inlet pipeline 1021, a gas inlet control flowmeter 1022, a gas premixer 1023, a gas pipeline unit, and a gas distribution integrated pipeline 1024. The gas inlet pipeline 1021, the gas inlet control flowmeter 1022, and the gas premixer 1023 are arranged outside the process chamber, and the gas inlet pipeline 1021 and the gas inlet control flowmeter 1022 are in communication, and the gas premixer 1023 and the gas inlet control flowmeter 1022 are in communication. The coating device 100 further includes a cathode integrated assembly 110, which at least partially extends into the process chamber, and includes a cathode integrated cabinet, a circuit connection protection unit, and an inlet and outlet water cooling pipeline unit. The gas pipeline unit is arranged in the cathode integrated cabinet, and the gas pipeline unit is in communication with the gas premixer 1023. The gas distribution integrated pipeline 1024 is arranged in the process chamber, and the gas distribution integrated pipeline 1024 is in communication with the gas pipeline unit. The gas inlet pipeline 1021 is used to receive the process gas provided by the gas supply device, the gas inlet control flowmeter 1022 is used to receive the process gas delivered by the gas inlet pipeline 1021, and accurately control the inlet flow and / or pressure of various process gases to meet the process coating requirements. The gas premixer 1023 is used to receive at least one process gas delivered by the gas inlet control flowmeter 1022, and mix the at least one process gas. The gas pipeline unit is used to receive the process gas mixed by the gas premixer 1023. The gas distribution integrated pipeline 1024 is a kind of pipeline integrated device, which is used to receive the process gas delivered by the gas pipeline unit, and uniformly deliver the process gas into the process chamber to achieve uniform gas distribution, so as to achieve the purpose of uniform coating.
[0049] Exemplarily, as shown in Figure 1 The coating device 100 further includes a sputtering power source controller 115 arranged outside the process chamber and electrically connected with the sputtering power source 105, and configured to control the voltage, current, power, and frequency of the sputtering power source 105, such as the voltage of the sputtering power source 105 during arc striking and glow starting needs to be accurately controlled.
[0050] Specifically, the sputtering power supply 105 provides an alternating current to the first target material 103 and the second target material 104, so that an alternating electric field is formed between the first target material 103 and the second target material 104, the alternating electric field can ionize the process gas to form a plasma, and the plasma collides with the first target material 103 and the second target material 104, so that the first target material 103 and the second target material 104 sputter target particles (including target atoms, target molecules, target ions). As shown in Figure 2 Figure 2 The arrows in the figure show the main motion direction of the sputtering particles (including plasma and target particles) when moving from the current target to the other target. Among them, the sputtering particles far away from the center of the alternating electric field (and the magnetic field in the following text) (mainly the lower position sputtering particles, such as the sputtering particles in region B), are less affected by the alternating electric field (and the magnetic field in the following text), and have lower energy, so this part of the low-energy particles will fall on the product in the processing area. While the sputtering particles in the upper position (such as the sputtering particles in region D) are also far away from the center of the alternating electric field, they have lower energy, but this part of the sputtering particles will be close to the center of the alternating electric field (and close to the magnetic field in the following text) after falling down, thereby obtaining energy. The sputtering particles close to the center of the alternating electric field (and the magnetic field in the following text) (such as the sputtering particles in region C) are greatly affected by the alternating electric field (and the magnetic field in the following text), and have higher energy. Because the first target material 103 and the second target material 104 alternately serve as cathode and anode, the direction of the alternating electric field changes constantly, so this part of the high-energy particles will move back and forth in the horizontal direction, collide with the first target material 103 and the second target material 104, thereby consuming energy, and finally the energy of this part of the high-energy particles is reduced, thereby falling on the product in the processing area. Therefore, through this structure, most of the sputtering particles falling on the product in the processing area have lower energy, thereby reducing the physical damage and thermal damage to the product.
[0051] The advantages of the film coating device 100 provided by the embodiments of the present application are as follows.
[0052] Firstly, compared with the traditional film coating device, this structure can produce more low-energy sputtering particles, and these low-energy sputtering particles have smaller impact force when deposited on the product surface, thereby reducing the physical damage to the product. For example, in semiconductor device manufacturing, low-energy particle deposition can avoid lattice damage to fragile semiconductor materials, and ensure the performance and reliability of the device.
[0053] Secondly, since the target particles generated by low-energy particles hitting the target are mostly target atoms or target molecules, and the particles generated by high-energy particles hitting the target are mostly ions, the film coating device 100 provided by the embodiment of the present application can generate more low-energy particles, so that more target particles are deposited on the surface of the product in the form of single atoms or molecules, that is, an atomic-level deposition process is realized, and the film layer structure formed in this way is more dense, uniform, and has stronger binding force with the product. Compared with the traditional deposition method, the atomic-level deposition can reduce the damage risk caused by defects in the film layer structure and insufficient binding force, and improve the quality and stability of the film layer.
[0054] Thirdly, since the film coating device 100 provided by the present application can make more low-energy particles participate in film coating and reduce the impact and heating effect of high-energy particles on the substrate, low-temperature film coating is realized, which is of great significance for the film coating of some temperature-sensitive materials, such as organic light-emitting diode (OLED) materials, polymers, biological materials, etc., and avoids changes or damage to the performance of the materials caused by excessively high temperature. Moreover, the low-energy particles cause less thermal damage to the product, which reduces the degree of thermal expansion and contraction of the product, thereby reducing the stress of the product and reducing cracks and deformation caused by excessive stress. Uniform plasma distribution and lower energy input can also make the temperature of the surface of the product more uniform, which helps to reduce the problems of cracks, peeling, etc. of the film layer caused by excessive thermal stress, and improves the bonding strength of the film layer and the product and the integrity of the film layer. In practical applications, the stress during film layer growth can also be controlled by adjusting process parameters, such as the magnetic field strength of the magnetic field, the power of the sputtering power supply 105, the working gas pressure, etc. in the following text. Reasonable stress regulation can avoid problems such as cracks and peeling of the film layer caused by excessive stress, and reduce damage to the product. For example, when preparing a multi-layer film structure, the stress state of each layer of film can be adjusted to match each other, thereby improving the stability and reliability of the entire film system.
[0055] Fourthly, in the traditional film coating device, the sputtering angle of the target particles is large, and many target particles will be sputtered onto the cavity, causing waste, while in the embodiment of the present application, the first target 103 and the second target 104 are mirror-symmetrically arranged and sputter against each other, and the target particles are transferred back and forth between the two targets, so that the waste of target particles is less, and the utilization rate of the target is improved. Moreover, the mutual sputtering of the two targets can avoid the deposition of impurities (such as oxides) on the same target, which affects the voltage of the target, and improves the stability and uniformity of sputtering film coating.
[0056] Fifth, the coating device 100 in the embodiments of the present application can better control the energy and direction of the sputtering particles, so that the sputtering particles are deposited on the product with more uniform energy and angle, and the formed film layer structure is more dense and uniform. The dense film layer structure can improve the barrier property, corrosion resistance and other properties of the film layer, prolong the service life of the film layer, and significantly improve the quality of the film layer. For example, in the field of optical thin film, semiconductor thin film and other fields with high requirements for film layer quality, the use of the coating device 100 has obvious advantages. Moreover, the coating device 100 can reduce the incorporation of impurities in the coating process. Because in the mirror image target sputtering process, the plasma region between the two target materials is relatively stable, the entry of external impurities can be effectively inhibited, and the possibility of impurities in the target material mixing into the film layer in the sputtering process is also reduced, thereby improving the purity of the film layer.
[0057] In some embodiments, as shown in Figure 2 The first target material 103 has a first cavity 1031 inside, and the second target material 104 has a second cavity 1041 inside. The coating device 100 further comprises two groups of magnet assemblies 107, which are respectively arranged in the first cavity 1031 and the second cavity 1041 and are configured to guide the target particles and plasma.
[0058] Exemplarily, the magnet assembly 107 comprises at least one magnet 1071.
[0059] Exemplarily, the magnet 1071 is a Gauss magnet.
[0060] In the above embodiments, by arranging the magnet assembly 107, the target particles and plasma can be precisely guided. For different film layer types, the energy and direction of the sputtering particles can be adjusted by adjusting the placement position and angle of the magnet assembly 107, so as to meet different film layer requirements. In addition, in the traditional coating device, the energy distribution of the sputtering particles hitting the product is often relatively wide, and the high-energy particles may cause local damage to the product. In the embodiments of the present application, the magnetic field generated by the magnet assembly 107 can regulate the energy of the sputtering particles, and the energy of the sputtering particles is more concentrated in a relatively narrow range, and the distribution on the entire product surface is more uniform. This helps to reduce product damage caused by excessive local energy and improve the quality and uniformity of the film layer.
[0061] Figure 3 The structure diagram of the magnet assembly provided by an exemplary embodiment of the present application is shown.
[0062] In some embodiments, as shown in Figure 2 and Figure 3As shown, the magnet assembly 107 includes at least three magnets 1071 arranged in sequence, the magnets 1071 having oppositely arranged first ends 10711 and second ends 10712, the arrangement direction of the at least three magnets 1071 being crossed with the direction of each magnet 1071 with the first end 10711 pointing to the second end 10712, and the polarities of the first end 10711 and the second end 10712 of each magnet being opposite. The at least three magnets 1071 include at least one first magnet 10713, at least one second magnet 10714, and at least one third magnet 10715, the second magnet 10714 being arranged between the first magnet 10713 and the third magnet 10715, the polarity of the first end 10711 of the first magnet 10713 being the same as the polarity of the first end 10711 of the third magnet 10715, and the polarity of the first end 10711 of the first magnet 10713 being opposite to the polarity of the first end 10711 of the second magnet 10714.
[0063] Exemplarily, the arrangement direction of the magnets 1071 in the magnet assembly 107 is approximately perpendicular to the direction of the first end 10711 of the magnet pointing to the second end 10712.
[0064] Exemplarily, the magnet assembly 107 includes four magnets 1071.
[0065] Exemplarily, the number of the first magnets 10713 is 1, the number of the second magnets 10714 is 2, and the number of the third magnets 10715 is 1.
[0066] Exemplarily, the first end of the first magnet 10713 is N-pole, the second end of the first magnet 10713 is S-pole, the first end of the second magnet 10714 is S-pole, the second end of the second magnet 10714 is N-pole, the first end of the third magnet 10715 is N-pole, and the second end of the third magnet 10715 is S-pole.
[0067] In the above embodiment, the magnet assembly 107 with the above structure can accurately guide the movement direction of the sputtering particles, thereby accurately controlling the movement direction and energy of the sputtering particles.
[0068] Figure 4 Fig. 2 shows a structural schematic diagram of a coating device provided by another exemplary embodiment of the present application, Figure 5 Fig. 3 shows a structural schematic diagram of a coating device provided by still another exemplary embodiment of the present application.
[0069] In some embodiments, as Figure 2 , Figure 4 and Figure 5As shown, the first target 103 and the second target 104 both have annular vertical cross-sections in the horizontal direction. Magnets 1071 in the magnet assembly 107 located in the first cavity 1031 are arranged circumferentially along the first target 103, and magnets 1071 in the magnet assembly 107 located in the second cavity 1041 are arranged circumferentially along the second target 104. The magnet assembly 107 can be exemplarily configured in the following three ways.
[0070] First, a set of magnet assemblies 107 are disposed on the side of the first cavity 1031 near the second target 104, and another set of magnet assemblies 107 are disposed on the side of the second cavity 1041 near the first target 103.
[0071] Second, a set of magnet assemblies 107 is disposed at the bottom of the first cavity 1031, and another set of magnet assemblies 107 is disposed at the bottom of the second cavity 1041.
[0072] Third, one set of magnet assemblies 107 is disposed in the first cavity 1031 near the second target 104 at an angle below, and another set of magnet assemblies 107 is disposed in the second cavity 1041 near the first target 103 at an angle below.
[0073] In the above embodiments, a low-damage film layer can be prepared using the first configuration method. A denser film layer can be prepared using the second and third configuration methods. However, the second and third configuration methods result in more high-energy sputtered particles impacting the product, causing greater damage. In practical applications, the first configuration method can be used to first deposit a film as a protective layer on a fragile substrate, and then the second and third configuration methods can be used to deposit the desired dense film layer on top of the protective layer. This allows for the preparation of a multifunctional film layer through a composite coating method, thereby improving structural strength.
[0074] In some embodiments, such as Figure 1 As shown, the coating apparatus 100 further includes two cathode adjustment assemblies 108 and two magnetic shafts 109. The two cathode adjustment assemblies 108 are connected to the process chamber 101 and extend into the first cavity 1031 and the second cavity 1041, respectively. The two magnetic shafts 109 are respectively arranged in a one-to-one correspondence with the two cathode adjustment assemblies 108. Each magnetic shaft 109 is connected to its corresponding cathode adjustment assembly 108, and each magnetic shaft 109 can rise, fall, and rotate under the drive of its corresponding cathode adjustment assembly 108. Two sets of magnet assemblies 107 are respectively connected to the two magnetic shafts 109.
[0075] For example, the cathode conditioning assembly 108 is connected to the process chamber 101 via the cathode integration assembly 110.
[0076] In the above embodiment, the position and angle of the magnetic axis 109 can be flexibly adjusted by the cathode adjusting assembly 108, so that the position and angle of the magnet assembly 107 can be flexibly adjusted, and the magnet assembly 107 can accurately control the sputtering particles.
[0077] In some embodiments, the coating device 100 further comprises two target pipes. The two target pipes are arranged one by one with the two cathode adjusting assemblies 108, each target pipe is connected with the corresponding cathode adjusting assembly 108, the first target material 103 and the second target material 104 are respectively connected with the two target pipes, and the cathode adjusting assembly 108 can drive the target pipe to rise, fall and rotate, so as to flexibly adjust the position and angle of the first target material 103 and the second target material 104.
[0078] In some embodiments, as shown in Figure 2 The coating device 100 further comprises an auxiliary anode 111. The auxiliary anode 111 is arranged in the process chamber and located between the first target material 103 and the second target material 104.
[0079] For example, the auxiliary anode 111 is grounded.
[0080] For example, the auxiliary anode 111 is connected with the cathode integrated assembly 110.
[0081] Because the distance between the first target material 103 and the second target material 104 is far, at the moment when the first target material 103 and the second target material 104 are ignited, the sputtering particles cannot accurately move along the electric field direction of the alternating electric field between the first target material 103 and the second target material 104. In the above embodiment, by arranging the auxiliary anode 111, the sputtering particles can be guided at the moment when the first target material 103 and the second target material 104 are ignited.
[0082] In some embodiments, as shown in Figure 1 The coating device 100 further comprises a carrier plate 106 and a bias power supply 112. The carrier plate 106 is arranged in the processing area and is configured to carry products. The bias power supply 112 has a first anode connection end and a first cathode connection end, the first anode connection end is electrically connected with the process chamber 101, and the first cathode connection end is electrically connected with the carrier plate 106.
[0083] For example, the coating device 100 further comprises a bias power supply controller 113, which is arranged outside the process chamber and is electrically connected with the bias power supply 112, and is configured to control the voltage, current, power and frequency of the bias power supply 112.
[0084] For example, the first cathode connection end of the bias power supply 112 is connected with the roller shaft supporting the carrier plate 106.
[0085] In the above embodiment, the bias power supply 112 can provide a negative bias to the carrier plate 106, so as to attract positive ions in the target particles to bombard the thin film being deposited, thereby improving the quality of the thin film, increasing the density of the thin film, adjusting the stress of the thin film, and the like.
[0086] In some embodiments, the first cavity 1031 and the second cavity 1041 are both provided with cooling liquid, and the two groups of magnet assemblies 107 are respectively immersed in the cooling liquid in the first cavity 1031 and the cooling liquid in the second cavity 1041.
[0087] In the above embodiment, by providing the cooling liquid in the first cavity 1031 and the second cavity 1041, the magnet assemblies 107 can be cooled.
[0088] In some embodiments, the film coating device 100 further comprises a protective cover 114, which is arranged between the first target 103 and the process chamber 101, and between the second target 104 and the process chamber 101.
[0089] In the above embodiment, by providing the protective cover 114, the target particles sputtered by the first target 103 and the second target 104 can be blocked from impacting the process chamber 101, thereby contaminating the process chamber 101. Moreover, by providing the protective cover 114, the first target 103 and the second target 104 can be protected when they are lifted, preventing the first target 103 and the second target 104 from colliding with other structures. In addition, the protective cover 114 and the cathode integrated assembly 110 are detachably connected, facilitating maintenance and replacement.
[0090] In some embodiments, as shown in Figure 1 The sputtering power supply 105 is a radio frequency power supply, a direct current power supply, or a direct current pulse power supply. The sputtering power supply 105 has at least one second anode output end and at least two second cathode output ends. The second anode output end is electrically connected to the process chamber 101. The two second cathode output ends are respectively electrically connected to the first target 103 and the second target 104. The carrier plate 106 is electrically connected to the process chamber 101. The process chamber 101 is grounded. The sputtering power supply 105 provides current to the first target 103 and the second target 104, so that the first target 103 and the second target 104 become cathodes, and the carrier plate 106 and the process chamber 101 become an anode.
[0091] Exemplarily, in the case where the film coating device 100 comprises an auxiliary anode 101, the auxiliary anode 101 is electrically connected to the second anode output end.
[0092] In the above embodiment, through this structure, the low-energy particles far from the electric field centers of the first target 103 and the second target 104 can fall on the products on the carrier plate 106, and the high-energy particles close to the electric field centers of the first target 103 and the second target 104 can hit the first target 103 and the second target 104 back and forth in the horizontal direction, thereby consuming energy, and finally the energy is low to fall on the products on the carrier plate 106. And by setting the auxiliary anode 101, the direction of the sputtered particles can also be guided.
[0093] In practical application, for the coating device 100, the products can be coated based on the following steps.
[0094] Firstly, clean the products.
[0095] Specifically, the products to be coated are thoroughly cleaned to remove impurities such as dirt, oil, dust, and oxides on the surface to ensure that the film layer can be well attached. The cleaning method usually includes ultrasonic cleaning, solvent cleaning, pickling, etc. For example, the products are soaked in organic solvent to remove the oil on the surface, and then rinsed with deionized water.
[0096] Secondly, install the products.
[0097] Specifically, the cleaned products are installed on the substrate holder of the carrier plate 106 to ensure that the products are firmly and accurately installed. The substrate holder should be designed to allow the products to be uniformly exposed to sputtered particles during the coating process to obtain a uniform film layer.
[0098] Thirdly, prepare the target materials.
[0099] Specifically, select appropriate materials as the first target 103 and the second target 104, and the materials of the first target 103 and the second target 104 should be determined according to the coating requirements, such as metal targets (such as copper, aluminum, titanium, etc.), alloy targets, or ceramic targets, etc. The first target 103 and the second target 104 are installed on the target tube to ensure good contact between the target and the first target 103 and the second target 104, so as to effectively conduct current.
[0100] Fourthly, vacuumize.
[0101] Specifically, by controlling the valve, the process chamber is closed, and the vacuum pump is started to vacuumize the process chamber, and the air pressure in the chamber is reduced to a preset air pressure, which is usually required to reach a high vacuum degree of 10 -3 Pa~10 -4 Pa. This step is to reduce the interference of gas molecules on the sputtering process, to ensure that the sputtered particles can freely fly in the vacuum and deposit on the product surface.
[0102] Fifthly, introduce argon gas.
[0103] Specifically, when the vacuum degree of the process chamber reaches the requirement, appropriate argon gas is introduced. Argon is an inert gas, which plays a role in generating plasma during sputtering. By adjusting the flow rate and pressure of argon, a stable argon atmosphere is formed in the process chamber, and the pressure of argon is generally between 0.1 Pa and 1 Pa.
[0104] Step 6, apply voltage.
[0105] Specifically, a medium-frequency voltage is applied between the first target 103 and the second target 104 by the sputtering power supply 105, and the frequency is generally between 10 kHz and 100 kHz. Under the action of the electric field, argon is ionized into argon ions and electrons to form plasma.
[0106] Step 7, pre-sputter the target.
[0107] Specifically, argon ions accelerate to bombard the surfaces of the first target 103 and the second target 104 under the action of the electric field, and the first target 103 and the second target 104 are pre-sputtered. The purpose of pre-sputtering is to remove oxides and impurities on the surface of the target, and to increase the temperature of the target surface to a stable sputtering state. The pre-sputtering time is generally several minutes to tens of minutes, and the specific time depends on the material and state of the target.
[0108] Step 8, generate sputtering.
[0109] Specifically, after pre-sputtering is completed, the surfaces of the first target 103 and the second target 104 have reached a stable sputtering state. At this time, argon ions continue to bombard the target surface to sputter target atoms. Through the alternating electric field between the first target 103 and the second target 104 and the magnetic field of the magnet assembly 107, the motion direction of the sputtered particles is controlled, so that the first target 103 and the second target 104 sputter each other, and the sputtered target particles have a certain energy. The low-energy target particles far from the center of the alternating electric field and the magnetic field fly to the product surface and deposit, completing low-damage film deposition.
[0110] Step 9, deposit film.
[0111] Specifically, after the flying target particles reach the product surface, they interact with the atoms on the product surface to form chemical bonds or physical adsorption, thereby depositing on the product surface to form a thin film. During film deposition, parameters such as sputtering power, time, and gas flow rate need to be controlled to obtain the required film thickness, structure, and performance. If the adhesion required for the prepared film layer is high and the crystallinity has certain requirements, a negative bias power supply can be turned on to control the film deposition.
[0112] Step 10, turn off the power and gas.
[0113] Specifically, when the film reaches the desired thickness, the sputtering power 105 and the argon gas inlet valve are closed, and the sputtering process is stopped.
[0114] Eleventh step, cooling.
[0115] Specifically, the film coating device 100 is allowed to cool naturally in a vacuum state for a period of time, so that the temperature of the product, the first target material 103 and the second target material 104 is reduced to room temperature, in order to avoid damage or deformation of the film layer when the product is taken out due to the high temperature.
[0116] Twelfth step, taking out the product.
[0117] Specifically, after the film coating device 100 is cooled, the chamber is opened, and the product after film coating is taken out. The quality of the film layer of the product is detected, including the thickness, hardness, adhesion, roughness and other indicators of the film layer. If the quality of the film layer does not meet the requirements, the reasons need to be analyzed and corresponding adjustment and improvement are needed.
[0118] Figure 6 The structure diagram of the film coating device provided by an example embodiment of the present application is shown, Figure 7 The structure diagram of the film coating device provided by another example embodiment of the present application is shown, Figure 8 The structure diagram of the film coating device provided by still another example embodiment of the present application is shown. Figures 6-8 The arrow in the figure shows the main movement direction of the sputtering particles when moving from the current target material to another target material.
[0119] Based on the same concept, as Figures 6-8 The film coating device 200 provided by the embodiment of the present application also includes a loading device 201, a heating device 202, a first buffering device 203, at least one film coating device 100 in the above-mentioned embodiments, a cooling device 204 and an unloading device 205. The functions and structures of each device are as follows.
[0120] The loading device 201 is configured to receive and transport the product. The loading device 201 includes a loading cavity, and the loading cavity has a loading chamber. The loading device 201 can be frequently vacuumized and broken, so as to meet the switching from atmosphere to vacuum, and facilitate the normal process operation of the subsequent device.
[0121] The heating device 202 is in communication with the loading device 201 and is configured to receive the product transported by the loading device 201 and heat the product. The heating device 202 has a heating cavity with a heating chamber, and the heating device 202 can heat and preheat the product to match the film plating under different process temperature conditions. For example, the heating device 202 can heat the product by a heating assembly including a heating wire 2021 and a radiation uniform flow heating plate, or can heat the product by a heating assembly including a heating lamp tube and a reflector plate. The heating device 202 can have two sets of heating assemblies, and can select two sets of heating assemblies to heat the product at the same time, or control one set of heating assemblies to heat the product, so as to meet the purpose of uniform heating.
[0122] The first buffering device 203 is in communication with the heating device 202 and is configured to receive the product heated by the heating device 202 and adjust the transportation speed of the heated product. The first buffering device 203 has a buffering cavity with a buffering chamber. The buffering chamber can be configured with a heating mechanism to maintain the temperature of the product, and by controlling the transportation speed of the product, the cycle of the film plating equipment 200 can be controlled. In addition, the first buffering device 203 can maintain a high vacuum degree to isolate the heating device 202 and the film plating device 100.
[0123] At least one film plating device 100 is in communication with the first buffering device 203 and is configured to receive the product transported by the first buffering device 203 and plating the product.
[0124] The cooling device 204 is in communication with the film plating device 100 and is configured to receive the product plated by the film plating device 100 and cool the plated product. The cooling device 204 has a cooling cavity with a cooling chamber and a cooling pipeline 2041 installed in the cooling chamber. The cooling pipeline 2041 is used to pass in cooling water or refrigerant to cool the product. The cooling pipeline 2041 can be installed on the top, bottom and side wall of the cooling chamber. The cooling device 204 can cool the plated product to room temperature and reduce subsequent adsorption pollution.
[0125] The unloading device 205 is in communication with the cooling device 204 and is configured to receive the product cooled by the cooling device 204 and transport the cooled product to the next process. The unloading device 205 has an unloading cavity with an unloading chamber, which needs to be broken and evacuated, and provides the carrier plate 106 to the subsequent platform or process after discharging.
[0126] In some embodiments, the coating equipment 200 further comprises a pump group mechanism 206. The pump group mechanism 206 is in communication with the loading chamber, the heating chamber, the buffer chamber, the process chamber, the cooling chamber and the unloading chamber, and is configured to vacuumize the loading chamber, the heating chamber, the buffer chamber, the process chamber, the cooling chamber and the unloading chamber. The pump group mechanism 206 can comprise a plurality of vacuum pump groups, and one vacuum pump group can vacuumize at least one chamber, or one chamber can be equipped with at least one vacuum pump group for vacuumization. The vacuum pump group can be composed of a mechanical rotary vane pump and a Roots pump, which can be used to vacuumize the chamber to a low vacuum degree of about 1 Pa to 10 Pa; the vacuum pump group for vacuumizing the process chamber is additionally equipped with a molecular pump in addition to the mechanical rotary vane pump and the Roots pump, which can be used to vacuumize to a high vacuum degree of about 10 -4 Pa to 10 -6 Pa, and different pump group models can be selected to meet the preparation of different processes.
[0127] In some embodiments, the coating equipment 200 further comprises a transmission mechanism 207 arranged in the loading chamber, the heating chamber, the buffer chamber, the process chamber, the cooling chamber and the unloading chamber, and configured to transport the carrier plate 106 or the product (i.e., without arranging the carrier plate 106 to carry the product, the product is directly placed on the transmission mechanism 207 for transportation). The transmission mechanism 207 comprises a plurality of rollers, a plurality of gears, a plurality of belts and a driving assembly. For example, the driving assembly can comprise a motor (such as a servo motor), a synchronous belt and a synchronous wheel, the driving assembly can drive the belt to rotate, one end of each roller is sleeved with a gear, and the gears of adjacent two rollers are sleeved with a belt to achieve transmission, thereby driving the plurality of rollers to rotate, the rollers are used to support the carrier plate or the product, thereby driving the carrier plate 106 to move. For example, if the coating of crystalline silicon is selected, two groups of rollers with relatively short lengths can be selected, one end of one group of rollers is sleeved with a gear, and the other group of rollers does not need to be equipped with a gear, a belt and a driving assembly, and the two ends of the carrier plate 106 are respectively supported by the two groups of rollers.
[0128] In the above embodiments, the transmission process of the carrier plate 106 or the product can be accurately controlled through the structure. In actual application, the driving and stopping of the transmission mechanism 207 can be controlled by the control inductors before and after each door valve.
[0129] In some embodiments, the coating equipment 200 further comprises a plurality of door lock devices 208. The plurality of door lock devices 208 are arranged between the loading device 201 and the heating device 202, between the first buffer device 203 and the coating device 100, between the coating device 100 and the cooling device 204, and between the cooling device 204 and the unloading device 205. The door lock devices 208 are configured to isolate the loading device 201 and the heating device 202, the first buffer device 203 and the coating device 100, the coating device 100 and the cooling device 204, and the cooling device 204 and the unloading device 205, so as to achieve the atmosphere independence in each chamber. The door lock device 208 comprises a door lock cavity and a door valve. The door lock cavity has a door lock chamber, and the door valve is arranged in the door lock chamber. The door valve is exemplarily a flapper valve or a flap valve. Exemplarily, the top of the door lock chamber is provided with an upper door valve, and the bottom of the door lock chamber is provided with a lower door valve. The lower door valve is in a fixed state, and the upper door valve can be controlled to rise or fall by a lifting motor, so as to realize the opening and closing of the door valve.
[0130] In some embodiments, as shown in Figure 7 and Figure 8 The number of the coating devices 100 is at least two. The first coating device 100 is in communication with the first buffer device 203, and the last coating device 100 is in communication with the cooling device 204. The positions and / or angles of the two groups of magnet assemblies 107 of the at least one coating device 100 in the first cavity 1031 and the second cavity 1041 are different from those of the two groups of magnet assemblies 107 of the other coating devices 100 except the at least one coating device 100. Through this structure, the at least two coating devices 100 can respectively prepare film layers with different properties and functions, so as to realize the preparation of multiple film layers. For example, the protective layer can be prepared by one coating device 100, and the dense film layer can be prepared by another coating device 100. The coating equipment 200 further comprises a second buffer device 209. The second buffer device 209 connects two adjacent coating devices 100 and is configured to isolate the two adjacent coating devices 100, so as to effectively perform atmosphere transition and prevent cross contamination during the coating of the two adjacent coating devices 100.
[0131] The basic principles of the present application are described above in combination with specific embodiments. However, it should be pointed out that the advantages, advantages, effects and the like mentioned in the present application are only examples and are not limiting. These advantages, advantages, effects and the like cannot be considered as the must-have of each embodiment of the present application. In addition, the above specific details are only for the purpose of example and understanding, and are not limiting. The present application does not have to use the above specific details to realize.
[0132] The block diagrams of devices, apparatuses, devices, and systems involved in this application are merely illustrative examples and are not intended to require or imply that they must be connected, arranged, or configured in the manner shown in the block diagrams. As those skilled in the art will recognize, these devices, apparatuses, devices, and systems can be connected, arranged, and configured in any manner. Words such as “comprising,” “including,” “having,” etc., are open-ended terms meaning “including but not limited to,” and are used interchangeably with them. The terms “or” and “and” as used herein refer to the terms “and / or,” and are used interchangeably with them unless the context clearly indicates otherwise. The term “such as” as used herein refers to the phrase “such as but not limited to,” and is used interchangeably with it.
[0133] It should also be noted that in the apparatus, equipment, and methods of this application, the components or steps can be disassembled and / or recombined. These disassemblies and / or recombinations should be considered as equivalent solutions of this application.
[0134] The above description of the disclosed aspects is provided to enable any person skilled in the art to make or use this application. Various modifications to these aspects will be readily apparent to those skilled in the art, and the general principles defined herein can be applied to other aspects without departing from the scope of this application. Therefore, this application is not intended to be limited to the aspects shown herein, but rather to be accorded the widest scope consistent with the principles and novel features disclosed herein.
[0135] The above description has been given for purposes of illustration and description. Furthermore, this description is not intended to limit the embodiments of this application to the forms disclosed herein. Although numerous exemplary aspects and embodiments have been discussed above, those skilled in the art will recognize certain variations, modifications, alterations, additions, and sub-combinations thereof.
Claims
1. A coating apparatus, characterized in that, include: A process cavity, wherein the process cavity has a process chamber; An intake assembly, connected to the process chamber, is configured to deliver process gas to the process chamber; The first target material is disposed within the process chamber; The second target is disposed in the process chamber and is spaced apart from the first target in the horizontal direction. A sputtering power supply having a first output terminal and a second output terminal, the first output terminal being electrically connected to a first target and the second output terminal being electrically connected to a second target, the sputtering power supply being configured to provide alternating current to the first target and the second target, such that the first target and the second target alternately act as cathode and anode to each other; The first and second targets form a processing area below them for coating the product.
2. The coating apparatus according to claim 1, characterized in that, The first target has a first cavity inside, and the second target has a second cavity inside. When the sputtering power supply provides alternating current to the first target and the second target, an alternating electric field is formed between the first target and the second target. The alternating electric field can ionize the process gas into plasma. The plasma impacts the first target and the second target, which can sputter target particles from the first target and the second target. The coating apparatus further includes: Two sets of magnet assemblies are respectively disposed in the first cavity and the second cavity, and are configured to guide the target particles and the plasma.
3. The coating apparatus according to claim 2, characterized in that, The magnet assembly includes: At least three magnets are arranged sequentially, each magnet having a first end and a second end that are disposed opposite to each other. The arrangement direction of the at least three magnets intersects the direction in which the first end of each magnet points to the second end, and the polarities of the first end and the second end of each magnet are opposite. The at least three magnets include at least one first magnet, at least one second magnet, and at least one third magnet, with the second magnet disposed between the first magnet and the third magnet. The polarity of the first end of the first magnet is the same as that of the first end of the third magnet, and the polarity of the first end of the first magnet is opposite to that of the first end of the second magnet.
4. The coating apparatus according to claim 3, characterized in that, The first target and the second target both have annular vertical cross-sections in the horizontal direction. The magnets in the magnet assembly located in the first cavity are arranged circumferentially along the first target, and the magnets in the magnet assembly located in the second cavity are arranged circumferentially along the second target. In one embodiment, one set of the magnet assemblies is disposed on the side of the first cavity near the second target material, and the other set of the magnet assemblies is disposed on the side of the second cavity near the first target material; or, One set of the magnet assemblies is disposed at the bottom of the first cavity, and another set of the magnet assemblies is disposed at the bottom of the second cavity; or, One set of the magnet assemblies is disposed in the first cavity near the second target material at an angle below, and the other set of the magnet assemblies is disposed in the second cavity near the first target material at an angle below.
5. The coating apparatus according to any one of claims 2 to 4, characterized in that, Also includes: Two cathode adjustment assemblies are connected to the process cavity and extend into the first cavity and the second cavity, respectively; Two magnetic shafts are respectively configured to correspond one-to-one with the two cathode adjustment components. Each magnetic shaft is connected to the corresponding cathode adjustment component. Each magnetic shaft can rise, fall, and rotate under the drive of the corresponding cathode adjustment component. Two sets of magnet assemblies are respectively connected to the two magnetic shafts.
6. The coating apparatus according to any one of claims 1 to 4, characterized in that, Also includes: An auxiliary anode is disposed within the process chamber and located between the first target and the second target; A carrier plate, disposed in the processing area, is configured to carry the product; A bias power supply having a first anode connection terminal and a first cathode connection terminal, wherein the first anode connection terminal is electrically connected to the process cavity and the first cathode connection terminal is electrically connected to the carrier plate.
7. The coating apparatus according to any one of claims 2 to 4, characterized in that, Both the first cavity and the second cavity are provided with coolant, and the two sets of magnet assemblies are respectively immersed in the coolant of the first cavity and the coolant of the second cavity.
8. The coating apparatus according to claim 1 or 2, characterized in that, Also includes: A protective shield is disposed between the first target and the process cavity, and between the second target and the process cavity, and is configured to prevent target particles sputtered from the first target and the second target from impacting the process cavity.
9. A coating equipment, characterized in that, include: The loading device is configured to receive and transport products; A heating device, connected to the loading device, is configured to receive the product transported by the loading device and heat the product; A first buffer device, connected to the heating device, is configured to receive the product heated by the heating device and adjust the transport speed of the heated product. At least one coating apparatus according to any one of claims 1 to 8, connected to the first buffer device, is configured to receive the product conveyed by the first buffer device and to coat the product. A cooling device, connected to the coating device, is configured to receive the product coated by the coating device and cool the coated product. An unloading device, connected to the cooling device, is configured to receive the product cooled by the cooling device and transport the cooled product to the next process.
10. The coating equipment according to claim 9, characterized in that, The number of coating devices is at least two. The first coating device is connected to the first buffer device, and the last coating device is connected to the cooling device. The positions of the two sets of magnet assemblies of at least one coating device in the first cavity and the second cavity are different from the positions and / or angles of the two sets of magnet assemblies of the other coating devices in the first cavity and the second cavity, respectively. The coating equipment further includes: The second buffer device, connecting two adjacent coating devices, is configured to isolate the two adjacent coating devices.