Epitaxial base and epitaxial equipment
By setting cross-venting grooves on the upper surface of the epitaxial substrate, the problem of silicon wafer slippage was solved, enabling precise positioning of the silicon wafer and efficient epitaxial process, thus improving product quality.
Patent Information
- Application Number
- CN202422990545.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-04
- Publication Date
- 2025-11-25
- Estimated Expiration
- 2034-12-04
AI Technical Summary
Existing epitaxial substrates are prone to slippage during silicon wafer loading and unloading, causing the silicon wafer to fail to fall precisely into the preset position in the wafer pit, affecting the accuracy of the epitaxial process and product quality.
Several intersecting exhaust grooves are provided on the upper surface of the base body of the epitaxial substrate. At least some of the exhaust grooves are located outside the silicon wafer boundary, forming a long airflow channel so that the gas under the silicon wafer can be quickly discharged to prevent the wafer from slipping.
This improves the speed and precision of silicon wafer loading and unloading, ensuring that the silicon wafer falls accurately into the wafer pit, thereby enhancing the accuracy of the epitaxial process and product quality.
Smart Images
Figure CN223598701U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the technical field of semiconductor technology, in particular to an epitaxial pedestal and an epitaxial device. BACKGROUND
[0002] Epitaxial growth is an important process in semiconductor manufacturing, which is a method of growing a single crystal layer on a wafer under certain conditions. It includes vacuum epitaxy, vapor phase epitaxy, liquid phase epitaxy, etc. The most widely used is vapor phase silicon epitaxy, whose reaction mechanism is that volatile silicon source such as TCS (Trichlorosilane) reacts with hydrogen or pyrolyzes at high temperature to generate silicon atoms deposited on the wafer to grow an epitaxial layer.
[0003] When the silicon wafer is lifted on the epitaxial process equipment, the phenomenon of wafer sliding caused by the gas at the bottom of the silicon wafer not being able to be discharged in time may occur, that is, the silicon wafer cannot be accurately dropped into the preset position of the wafer pit. The surface of the existing epitaxial pedestal is usually provided with holes to improve the exhaust efficiency when the silicon wafer is lifted. In actual production, the lifting speed, process efficiency and exhaust speed need to be considered, but the exhaust efficiency generated by the punching of the pedestal has reached a technical bottleneck. With the increasing requirement for chip flatness, the problem of silicon wafer centering caused by wafer sliding cannot be ignored, and the ZDD (Z-Height Double Differentiation), SFQR (Site Frontsurface referenced least squares Range) and ESFQR ((Edge Site Frontsurface referenced least squares Range) of the product will be affected and deteriorated.
[0004] Therefore, it is necessary to provide an improved technical solution for the above technical problems, which is of great significance for semiconductor wafer manufacturing. Invention content
[0005] In view of the defects and deficiencies of the existing epitaxial pedestal in the prior art, the purpose of the present application is to provide an epitaxial pedestal and an epitaxial device to avoid the wafer sliding problem when the silicon wafer is lifted, and to ensure the process accuracy and product quality.
[0006] In one aspect, the present application provides an epitaxial pedestal, comprising a pedestal body, the outer edge of the pedestal body has a side wall, the side wall surrounds the pedestal body to form a wafer pit with an inner concave area, the wafer pit is used to accommodate a silicon wafer;
[0007] In the thickness direction of the pedestal body, the projection of the silicon wafer on the pedestal body has a first boundary;
[0008] The upper surface of the base body is provided with a plurality of air exhaust grooves intersecting with each other, and at least part of the two end points of the projection line of the air exhaust grooves on the base body are located outside the first boundary.
[0009] In an optional embodiment, the air exhaust grooves comprise a plurality of first air exhaust grooves arranged along a first direction and a plurality of second air exhaust grooves arranged along a second direction, the distance between adjacent first air exhaust grooves is equal to the distance between adjacent second air exhaust grooves, and the first direction is perpendicular to the second direction.
[0010] In an optional embodiment, each air exhaust groove extends radially along the center of the base body.
[0011] In an optional embodiment, the width of the air exhaust groove gradually increases or remains equal in the radial direction from the center of the base body to the edge of the base body.
[0012] In an optional embodiment, the width of the air exhaust groove ranges from 0.5mm to 2mm.
[0013] In an optional embodiment, the air exhaust groove has a depth in the thickness direction of the base body, and the depth ranges from 0.5mm to 2mm.
[0014] In an optional embodiment, the depth of the air exhaust groove remains constant.
[0015] In an optional embodiment, the two end points of the projection line of the air exhaust groove on the base body are located outside the first boundary, and the shortest distance between the end points and the first boundary ranges from 0mm to 5mm.
[0016] In an optional embodiment, the number of air exhaust grooves is not less than 6.
[0017] In another aspect, the application provides an epitaxial device provided with the epitaxial base as described in any one of the above technical solutions.
[0018] Compared with the prior art, the technical solution provided by the application has the following beneficial effects:
[0019] In the technical solution of the present application, a plurality of exhaust grooves are arranged on the upper surface of the base body, and the projection lines of at least part of the exhaust grooves on the base body have both ends located outside the first boundary, that is, the plurality of exhaust grooves penetrate the first boundary of the silicon wafer and exceed the area covered by the silicon wafer, so that the airflow under the silicon wafer has a long airflow channel during the process of being compressed to escape to the edge of the wafer pit, which is beneficial to the airflow flow; the exhaust grooves cooperate with the original holes on the base body to rapidly exhaust the gas under the silicon wafer, improve the up and down wafer speed of the silicon wafer, prevent the wafer sliding phenomenon, make the silicon wafer accurately fall into the preset position of the wafer pit, and improve the accuracy of the subsequent epitaxial process and the product quality. BRIEF DESCRIPTION OF DRAWINGS
[0020] Figure 1 is a top view structural schematic diagram of an epitaxial base in the prior art;
[0021] Figure 2 is a schematic diagram of a silicon wafer in a warped state in the prior art;
[0022] Figure 3 is a top view structural schematic diagram of an epitaxial base provided by Embodiment One of the present application;
[0023] Figure 4 is a sectional view structural schematic diagram of an epitaxial base provided by Embodiment One of the present application;
[0024] Figure 5 is Figure 4 is a local enlarged schematic diagram of position A in FIG. 5;
[0025] Figure 6 is a top view structural schematic diagram of an epitaxial base provided by Embodiment Two of the present application;
[0026] Figure 7 is another top view structural schematic diagram of an epitaxial base provided by Embodiment Two of the present application;
[0027] Figure 8 is a sectional view structural schematic diagram of an epitaxial base provided by Embodiment Two of the present application.
[0028] BRIEF DESCRIPTION OF DRAWINGS
[0029] 110, base body; 120, side wall; 130, through hole; 140, wafer pit; 150, exhaust groove; 151, first exhaust groove; 152, second exhaust groove. DETAILED DESCRIPTION
[0030] The epitaxial base provided by the prior art is as shown in FIG. 1. Figures 1-2As shown, the epitaxial pedestal includes a pedestal body 110, an outer edge of the pedestal body 110 has a side wall 120, the side wall 120 surrounds the pedestal body 110 to form a wafer pit 140 with an inner recessed area, the wafer pit 140 is used to accommodate a silicon wafer. When the silicon wafer is placed up and down, due to the existence of gas in the wafer pit, during the silicon wafer lowering process, part of the gas cannot be quickly discharged below the silicon wafer, causing the silicon wafer to slide in the wafer pit, causing the silicon wafer to deviate from the center position of the epitaxial pedestal. Referring to Figure 2 , the sliding state of two silicon wafers with different warping rates in the wafer pit 140 is shown, the lower one is a silicon wafer with a small warping degree, and the upper one is a silicon wafer with a large warping degree. Due to the influence of the shaped polishing, it is easy to cause the center height to be inconsistent, when the silicon wafer is continuously heated to fit the wafer pit, if there is only a bottom through hole, the gas below the silicon wafer may cause the silicon wafer to move randomly in any direction in the wafer pit, and during the fitting process, the silicon wafer may slide due to uneven stress, and the axis of the silicon wafer cannot coincide with the axis of the epitaxial pedestal. With the continuous expansion of the size of the semiconductor substrate, this sliding problem becomes more serious, and the influence on epitaxy also gradually increases. The movement of the silicon wafer causes uneven heating, which further worsens the above sliding phenomenon. In view of the above shortcomings and other shortcomings mentioned in the background art, the present application provides an epitaxial pedestal and an epitaxial device to avoid the sliding problem of the silicon wafer when the silicon wafer is placed up and down, and to ensure the accuracy of the epitaxial process and the product quality.
[0031] The following embodiments one to two illustrate the implementation of the present application, and those skilled in the art can easily understand other advantages and effects of the present application from the disclosure of the present application. The present application can also be implemented or applied by other different specific embodiments, and various modifications or changes can be made to the details in the specification based on different viewpoints and applications without departing from the spirit of the present application.
[0032] For ease of description, referring to Figure 1 and Figure 2 , the x direction is defined as the first direction, the y direction is defined as the second direction, and the z direction is defined as the third direction.
[0033] Embodiment one:
[0034] Referring to Figures 3-5The present embodiment provides an epitaxial pedestal, which comprises a pedestal body 110, the outer edge of the pedestal body 110 has a side wall 120, the side wall 120 surrounds the pedestal body 110 to form a wafer pit 140 with an inner recess region, the wafer pit 140 is used to accommodate a silicon wafer; in the thickness direction of the pedestal body 110, the projection of the silicon wafer on the pedestal body 110 has a first boundary; the upper surface of the pedestal body 110 is provided with a plurality of intersecting exhaust grooves 150, and the projection lines of at least part of the exhaust grooves 150 on the pedestal body 110 have both end points located outside the first boundary. That is, the area formed by connecting the end points of the exhaust grooves 150 in turn can completely cover the area of the silicon wafer when the silicon wafer is correctly placed in the wafer pit 140, and the end points of the exhaust grooves 150 exceed the edge of the silicon wafer, so that the airflow under the silicon wafer has a long and unobstructed airflow passage during the process of being compressed to escape to the edge of the wafer pit, which is beneficial to the flow of the airflow, and when the airflow reaches the area outside the edge of the silicon wafer, the airflow can be discharged upward along the gap between the silicon wafer and the side wall 120 (see Figure 5 Airflow direction schematic), the part of the airflow and the airflow discharged through the through hole on the pedestal body 110 together improve the overall discharge speed of the airflow under the silicon wafer, and avoid the silicon wafer from slipping when falling into the wafer pit 140.
[0035] Continuing to refer to Figures 3-5 In an optional embodiment, the exhaust grooves 150 comprise a plurality of first exhaust grooves 151 arranged in a first direction, and a plurality of second exhaust grooves 152 arranged in a second direction, the distance between adjacent first exhaust grooves 151 is equal to the distance between adjacent second exhaust grooves 152, so that the airflow has the opportunity to enter the exhaust passage in two different directions evenly. When the widths of adjacent exhaust grooves are equal, it can be ensured that the gas under the silicon wafer can be uniformly guided into each exhaust groove, and the gas is uniformly discharged along the edge of the silicon wafer, which helps to avoid the accumulation of gas in some areas, thereby improving the uniformity of the pressure under the silicon wafer. In addition, the exhaust grooves with uniform width are also easier to process and manufacture, so that the manufacturing error can be accurately controlled, which helps to reduce the production cost.
[0036] In an optional embodiment, the width of the exhaust groove 150 ranges from 0.5mm to 2mm. For example, for a 300mm silicon wafer, the size of the susceptor body 110 is 300mm to 305mm, and the exhaust groove 150 extends to the edge of the side wall 120. The 0.5mm to 2mm wide exhaust groove 150 can provide a more balanced exhaust effect. If the width of the exhaust groove 150 is too narrow, it cannot provide a good flow guiding effect and cannot quickly reduce the air pressure. If the width of the exhaust groove 150 is too large, it will affect the structural strength of the susceptor body 110, and also cannot provide a clear airflow channel for the airflow to quickly flow to the edge of the silicon wafer. For example, the width of the exhaust groove 150 can be 0.5mm, 1.0mm, 1.5mm or 2.0mm. Further, the width of the exhaust groove 150 ranges from 0.8mm to 1.2mm. For example, the width of the exhaust groove 150 can be 0.8mm, 0.9mm, 1.1mm or 1.2mm. It can be understood that based on the above technical solution, the width of the exhaust groove 150 can be enlarged or reduced proportionally for other different specifications of silicon wafers and epitaxial equipment.
[0037] Referring to Figure 4 and Figure 5 In an optional embodiment, the exhaust groove 150 has a depth D in the third direction, and the depth D ranges from 0.5mm to 2mm. The width and depth of the exhaust groove cooperate to form a groove with a good flow guiding effect. For example, the depth D of the exhaust groove 150 can be 0.5mm, 1.0mm, 1.5mm or 2.0mm. Further, the depth D of the exhaust groove 150 ranges from 0.8mm to 1.2mm. It can be understood that based on the above technical solution, the depth of the exhaust groove 150 can be enlarged or reduced proportionally for other different specifications of silicon wafers and epitaxial equipment. Further, the upper surface of the susceptor body 110 is divided into a plurality of annular regions along the radial direction with the center of the susceptor body 110 as the center point, including a first region S1, a second region S2 and a third region S3. The depth of the exhaust groove 150 provided in this embodiment remains constant, that is, the depths of the first region S1, the second region S2 and the third region S3 are the same, preferably 1mm. The widths of the first region S1, the second region S2 and the third region S3 are equal. It can be understood that the upper surface of the susceptor body 110 can also be divided into more annular regions along the radial direction.
[0038] Continuing to refer to Figure 5In an optional embodiment, the two end points of the projection line of the exhaust groove 150 on the base body 110 are located outside the first boundary, and the shortest distance L between the end points and the first boundary is between 0mm and 5mm. If the distance L is too small, the compressed air flow has not enough space to overflow along the edge of the silicon wafer. Taking a 300mm silicon wafer as an example, the size of the base body 110 can be 300mm to 305mm, and the exhaust groove 150 extends to the edge of the side wall 120.
[0039] It can be understood that the exhaust groove 150 can be a flow guide groove structure with a regular polygon such as a square or an isosceles trapezoid or a triangle, or an arc-shaped flow guide groove structure with a smooth flow guide surface. When the exhaust groove 150 is a regular polygon flow guide structure, the depth is the vertical distance from the groove bottom to the surface of the base body 110, and the width is the upper opening width of the groove body. When the exhaust groove 150 is an arc-shaped flow guide groove structure, the depth is the vertical distance from the lowest point of the groove bottom to the surface of the base body 110, and the width is the upper opening width of the groove body. The structure of the exhaust groove 150 provided in the embodiment is a flow guide groove structure with a rectangle or an isosceles trapezoid.
[0040] Referring to Figure 4 In an optional embodiment, the number of exhaust grooves 150 is not less than 6. As an example, three first exhaust grooves 151 and three second exhaust grooves 152 are arranged on the upper surface of the base body 110. The first exhaust grooves 151 and the second exhaust grooves 152 can also be arranged in four, five, six or more, and are also arranged on the upper surface of the base body 110 to achieve good flow guide effect. It can be understood that, in order to make the air flow uniformly flow along the first exhaust grooves 151 and the second exhaust grooves 152 to the edge of the silicon wafer and be discharged from the wafer pit 140, the first exhaust grooves 151 and the second exhaust grooves 152 are distributed symmetrically along the radial direction of the base body 110.
[0041] Referring to Figure 4 In an optional embodiment, the upper surface of the base body 110 is an arc surface, which can completely fit the silicon wafer after thermal expansion and deformation. The silicon wafer is in direct contact with the upper surface of the base body 110 in the wafer pit 140, which ensures uniform heating of the silicon wafer and reliable epitaxial quality.
[0042] The embodiment provides an epitaxial device provided with the epitaxial base as described in the above embodiments, which also has the above-mentioned good technical effects, which will not be repeated here.
[0043] Embodiment two:
[0044] Referring to Figures 6-8The present embodiment provides an epitaxial pedestal, which comprises a pedestal body 110, an outer edge of the pedestal body 110 is provided with a side wall 120, the side wall 120 surrounds the pedestal body 110 to form a wafer pit 140 with an inner recess region, the wafer pit 140 is used to accommodate a silicon wafer; in the thickness direction of the pedestal body 110, the projection of the silicon wafer on the pedestal body 110 has a first boundary; the upper surface of the pedestal body 110 is provided with a plurality of mutually intersecting exhaust grooves 150, and the projection lines of at least part of the exhaust grooves 150 on the pedestal body 110 have both end points located outside the first boundary. That is, the area formed by sequentially connecting the end points of the exhaust grooves 150 can completely cover the area of the silicon wafer when the silicon wafer is correctly placed in the wafer pit 140, and the end points of the exhaust grooves 150 exceed the edge of the silicon wafer, so that the gas flow under the silicon wafer has a long enough gas flow channel in the process of being compressed to escape to the edge of the wafer pit, which is beneficial to the flow of the gas flow, and when the gas flow reaches the area outside the range of the silicon wafer, it can overflow upwards along the gap between the silicon wafer and the side wall 120 (see Figure 5 Gas flow direction diagram), and the gas flow overflowing through the through hole on the pedestal body 110 together improves the exhaust speed of the gas flow, avoiding the sliding of the silicon wafer.
[0045] Referring to Figure 6 and Figure 7 In an optional embodiment, each exhaust groove 150 extends and is distributed along the radial direction of the pedestal body 110 through the center of the pedestal body 110. The radially extending exhaust groove 150 can provide the gas flow with a more uniform and branchless guide path, and the gas under the silicon wafer flows along each exhaust groove 150 from the center point to the edge of the silicon wafer, and the gas pressure change is more stable, which is beneficial to the accurate falling of the silicon wafer into the preset position and avoids the sliding phenomenon.
[0046] In an optional embodiment, the width of the exhaust groove 150 ranges from 0.5 mm to 2 mm. If the width of the exhaust groove 150 is too narrow, it cannot play a good flow guiding effect and cannot quickly reduce the gas pressure, and if the width of the exhaust groove 150 is too large, it will affect the structural strength of the pedestal body 110 and also cannot provide a clear gas flow channel for the gas flow to quickly flow to the edge of the silicon wafer. As an example, the width of the exhaust groove 150 can be 0.5 mm, 1.0 mm, 1.5 mm or 2.0 mm. Further, the width of the exhaust groove 150 ranges from 0.8 mm to 1.2 mm. As an example, the width of the exhaust groove 150 can be 0.8 mm, 0.9 mm, 1.1 mm or 1.2 mm.
[0047] Referring to Figure 6In an optional embodiment, the width of the exhaust groove 150 is kept constant in the radial direction from the center of the base body 110 to the edge of the base body 110, for example, 0.5 mm, 1.0 mm, 1.5 mm, or 2.0 mm. When the width of each exhaust groove 150 is equal, it can ensure that the gas under the silicon wafer can be uniformly guided into each exhaust groove 150, and the gas can be uniformly discharged along the edge of the silicon wafer, which helps to avoid the accumulation of gas in some areas, thereby improving the uniformity of the pressure under the silicon wafer. In addition, the exhaust groove 150 with uniform width is easier to process and manufacture, and the manufacturing error can be accurately controlled, which helps to reduce the production cost.
[0048] Referring to Figure 7 In an optional embodiment, the width of the exhaust groove 150 gradually increases in the radial direction from the center of the base body 110 to the edge of the base body 110. For example, the width of the exhaust groove increases uniformly from 0.5 mm to 2.0 mm, or increases uniformly from 0.8 mm to 1.5 mm, or increases uniformly from 1.0 mm to 1.8 mm. It can be understood that even if the width of the exhaust groove 150 gradually increases, the size of each exhaust groove 150 should be consistent to ensure uniform gas flow. It can be understood that based on the above technical solution, the width of the exhaust groove 150 can be enlarged or reduced proportionally for other different specifications of silicon wafers and epitaxial equipment.
[0049] Referring to Figure 8 In an optional embodiment, the exhaust groove 150 has a depth in the third direction, and the depth ranges from 0.5 mm to 2 mm. The width and depth of the exhaust groove 150 cooperate to form a groove with good flow guiding effect. For example, the depth of the exhaust groove 150 can be 0.5 mm, 1.0 mm, 1.5 mm, or 2.0 mm. Further, the depth of the exhaust groove 150 ranges from 0.8 mm to 1.2 mm, preferably 1 mm, and the depth D of the exhaust groove 150 remains constant. It can be understood that based on the above technical solution, the depth of the exhaust groove 150 can be enlarged or reduced proportionally for other different specifications of silicon wafers and epitaxial equipment. Further, the upper surface of the base body 110 is divided into a plurality of annular regions including the first region S1, the second region S2, and the third region S3 with the center of the base body 110 as the center point. The depth of the exhaust groove 150 provided in the embodiment is a gradual design, and the depths of the first region S1, the second region S2, and the third region S3 increase uniformly in turn, so that the gas flow at the edge of the silicon wafer can be quickly discharged. It can be understood that the upper surface of the base body 110 can also be divided into more annular regions along the radial direction, so as to accurately design the depth variation trend of the exhaust groove 150 and obtain more excellent flow guiding effect. Further, the uniform and gradual design of the depth of the exhaust groove 150 makes it have a smooth flow guiding surface.
[0050] It can be understood that the exhaust groove 150 can be a flow guide groove structure with a square or isosceles trapezoidal or triangular regular polygon, or an arc-shaped flow guide groove structure with a smooth flow guide surface. When the exhaust groove 150 is a regular polygon flow guide structure, the depth is the vertical distance from the groove bottom to the surface of the base body 110, and the width is the upper opening width of the groove. When the exhaust groove 150 is an arc-shaped flow guide groove structure, the depth is the vertical distance from the lowest point of the groove bottom to the surface of the base body 110, and the width is the upper opening width of the groove. The structure of the exhaust groove 150 provided in the embodiment is an arc-shaped flow guide groove structure with a smooth flow guide surface.
[0051] Referring to Figure 6 and Figure 7 In an optional embodiment, the number of exhaust grooves 150 is not less than 6. For example, the number of exhaust grooves 150 is 6, 10, 12, 14, 16 or 18, and is uniformly distributed on the upper surface of the base body 110 to achieve good flow guide effect.
[0052] Referring to Figure 8 In an optional embodiment, the upper surface of the base body 110 is an arc surface, which can better fit the silicon wafer after thermal expansion and deformation. The silicon wafer is in direct contact with the upper surface of the base body 110 in the wafer pit 140, ensuring uniform heating of the silicon wafer and reliable epitaxial quality.
[0053] The embodiment provides an epitaxial device provided with an epitaxial base as described in the above embodiments, which also has the above-mentioned good technical effects, which will not be described here.
[0054] In summary, the present application provides an epitaxial base and an epitaxial device. A plurality of exhaust grooves are arranged on the upper surface of the base body, and the projection lines of at least part of the exhaust grooves on the base body are located outside the first boundary, that is, the plurality of exhaust grooves penetrate the first boundary of the silicon wafer and exceed the area covered by the silicon wafer, so that the airflow under the silicon wafer has a long enough airflow passage during the process of being compressed to escape to the edge of the wafer pit, which is conducive to the flow of the airflow. The exhaust grooves cooperate with the original holes in the base body to quickly exhaust the gas under the silicon wafer, improve the up-down wafer speed of the silicon wafer, prevent the silicon wafer from sliding, make the silicon wafer accurately fall into the preset position of the wafer pit, and improve the accuracy of the subsequent epitaxial process and the product quality. Therefore, the technical scheme of the present application has high industrial utilization value because it effectively overcomes the shortcomings of the prior art.
[0055] The above embodiments are only illustrative of the principles of the present application and its effects, and are not intended to limit the present application. Any modification or change made by any person skilled in the art without departing from the spirit and scope of the present application shall be covered by the claims of the present application.
Claims
1. An epitaxial pedestal comprising a pedestal body, an outer edge of the pedestal body having a side wall, the side wall surrounding the pedestal body to form a wafer pit having an inner recessed area, the wafer pit being configured to receive a silicon wafer; wherein, a projection of the silicon wafer on the pedestal body in a thickness direction of the pedestal body has a first boundary; an upper surface of the pedestal body is provided with a plurality of gas exhaust grooves intersecting with each other, and at least part of the projection lines of the gas exhaust grooves on the pedestal body have both end points located outside the first boundary.
2. The epitaxial pedestal of claim 1, wherein, The gas exhaust grooves comprise a plurality of first gas exhaust grooves arranged in a first direction, and a plurality of second gas exhaust grooves arranged in a second direction, and the distance between adjacent first gas exhaust grooves is equal to the distance between adjacent second gas exhaust grooves. The first direction is perpendicular to the second direction.
3. The epitaxial pedestal of claim 1, wherein, Each of the gas exhaust grooves extends radially along the pedestal body from a center of the pedestal body.
4. The epitaxial pedestal of claim 3, wherein, In a radial direction from the center of the pedestal body to an edge of the pedestal body, the width of the gas exhaust grooves gradually increases or remains constant.
5. The epitaxial pedestal of claim 1, wherein, The width of the gas exhaust grooves ranges from 0.5mm to 2mm.
6. The epitaxial pedestal of claim 1, wherein, The gas exhaust grooves have a depth in the thickness direction of the pedestal body, and the depth ranges from 0.5mm to 2mm.
7. The epitaxial pedestal of claim 6, wherein, The depth of the gas exhaust grooves remains constant.
8. The epitaxial pedestal of claim 1, wherein, Both end points of the projection lines of the gas exhaust grooves on the pedestal body are located outside the first boundary, and the shortest distance between the end points and the first boundary ranges from 0mm to 5mm.
9. The epitaxial pedestal of claim 1, wherein, The number of the gas exhaust grooves is not less than 6.
10. An epitaxial apparatus, comprising: An epitaxial pedestal as claimed in any one of claims 1 to 9 is provided.