Dimming glass, chemical vapor deposition device and semiconductor manufacturing equipment

Abstract

The utility model provides dimming glass, a chemical vapor deposition device and semiconductor manufacturing equipment, and relates to the technical field of semiconductor manufacturing, and the dimming glass comprises a first glass substrate, a conductive oxide film strip and a second glass substrate which are sequentially arranged along a first direction; the number of the conductive oxide thin films is multiple, the multiple conductive oxide thin film strips are concentrically distributed along the plane where the second direction and the third direction are located, the diameters of the multiple conductive oxide thin film strips are gradually increased, the adjacent conductive oxide thin film strips are arranged at intervals, and the first direction, the second direction and the third direction are perpendicular to one another. When the dimming glass is applied to a chemical vapor deposition process, ultraviolet light can be shielded or transmitted, so that the ultraviolet light can be uniformly irradiated to the surface of a wafer, the thickness of a film deposited on the surface of the wafer and the uniformity of the quality of the film are improved, and the quality of the wafer and the yield of the wafer are further improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor manufacturing, in particular to light-adjustable glass, chemical vapor deposition device and semiconductor manufacturing equipment. BACKGROUND

[0002] In the process of semiconductor manufacturing, chemical vapor deposition has been used for a long time to grow homoepitaxial and heteroepitaxial layers of various materials on wafers in a condition-limited environment as part of manufacturing these semiconductor processes. In these condition-limited environments, wafers are typically placed on a carrier and exposed to one or more volatile precursors that react and / or decompose on the wafer surface to produce the desired deposited film.

[0003] After the chemical vapor deposition film is formed on the wafer surface, the wafer needs to be irradiated with ultraviolet light for curing. The ultraviolet light has enough energy to excite photosensitive substances in the film, trigger photochemical reactions, and break certain chemical bonds in the film, thereby obtaining an oxide film with higher purity. When curing the oxide film, the ultraviolet light lamp is turned on, and after the ultraviolet light is reflected by a secondary reflector, the light path tends to be parallel, uniformly irradiating the quartz window and other optical components, and finally reaching the wafer surface. Since the optical structure of the ultraviolet light lamp cannot make the light intensity completely uniform at all places on the wafer, the machine adopts a rotating ultraviolet light lamp. However, due to the difference in light intensity in the parallel direction of the ultraviolet light lamp, the thickness of the wafer film and the quality of the film show a ring-like distribution, resulting in low uniformity of the thickness and quality of the wafer film. CONTENT OF THE UTILITY MODEL

[0004] The present application mainly provides a light-adjustable glass, a chemical vapor deposition device and semiconductor manufacturing equipment, which solves the technical problems of uniform irradiation of ultraviolet light on the wafer surface and improves the uniformity of the thickness of the deposited film on the wafer surface.

[0005] The technical solution adopted by the present application to solve the above technical problems is:

[0006] A light-adjustable glass, comprising a first glass substrate, a conductive oxide film strip and a second glass substrate arranged in sequence along a first direction; the conductive oxide film strip has a plurality of conductive oxide film strips, and the plurality of conductive oxide film strips are concentrically and diametrically increasing distributed along the plane where the second direction and the third direction are located, and the adjacent conductive oxide film strips are arranged at intervals, wherein the first direction, the second direction and the third direction are perpendicular to each other.

[0007] Optionally, an insulating strip is arranged on the conductive oxide film strip, one side of the insulating strip is a first electrode, and the other side of the insulating strip is a second electrode.

[0008] Optionally, the insulating strips are distributed along the second direction and the third direction; and the insulating strips separate the conductive oxide thin film strips into light transmission areas.

[0009] Optionally, an insulating strip is arranged every 30-60 degrees along the arc of the conductive oxide thin film strip; and the insulating strips separate the conductive oxide thin film strips into light transmission areas.

[0010] Optionally, the light transmission areas on the same conductive oxide thin film strip are connected in parallel.

[0011] Optionally, an insulating ring is arranged between adjacent conductive oxide thin film strips; the inner ring of the conductive oxide thin film strip is a first electrode; and the outer ring of the conductive oxide thin film strip is a second electrode.

[0012] Optionally, the conductive oxide thin film strips are connected in parallel.

[0013] Optionally, the total thickness of the first glass substrate, the conductive oxide thin film strips and the second glass substrate is 4-6 mm.

[0014] The application also provides a chemical vapor deposition device, which comprises an ultraviolet lamp, a quartz window, a shower head and a reaction chamber; the quartz window and the shower head can be made of the light-adjustable glass as described above, and are used to adjust the intensity of ultraviolet light in different areas.

[0015] The application also provides a semiconductor manufacturing device, which comprises the chemical vapor deposition device as described above, and is used to solidify the thin film after the thin film is deposited on the wafer surface.

[0016] The application provides light-adjustable glass, a chemical vapor deposition device and a semiconductor manufacturing device. A plurality of conductive oxide thin film strips are arranged between a first glass substrate and a second glass substrate, and the plurality of conductive oxide thin film strips are arranged concentrically, the plurality of conductive oxide thin film strips are distributed in an increasing diameter, adjacent conductive oxide thin film strips are arranged at intervals, and the plurality of conductive oxide thin film strips are powered off and powered on to adjust the light transmission of the light-adjustable glass. When the light-adjustable glass is applied to a thin film solidification process, the light-adjustable glass can block or transmit ultraviolet light, and ensure that the ultraviolet light can uniformly irradiate the wafer surface, thereby improving the uniformity of the thickness and quality of the thin film deposited on the wafer surface, and further improving the quality and yield of the wafer. BRIEF DESCRIPTION OF DRAWINGS

[0017] In order to more clearly illustrate the technical solutions of the application, the following will briefly introduce the drawings needed in the embodiments. It should be understood that the following drawings only show some of the embodiments of the application, and therefore should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can also be obtained without creative labor.

[0018] Figure 1 Structure diagram of cross section of the light control glass of the present application;

[0019] Figure 2 Structure diagram of distribution of conductive oxide film strips of the present application;

[0020] Figure 3 Structure diagram of conductive oxide film strips of the present application;

[0021] Figure 4 Structure diagram of conductive oxide film strips of the present application;

[0022] Figure 5 Structure diagram of conductive oxide film strips of the present application;

[0023] Icon: 100-first glass substrate; 200-conductive oxide film strips; 210-insulating strips; 211-first electrode; 212-second electrode; 220-light transmission area; 230-insulating ring; 300-second glass substrate.

[0024] The implementation, functional features and advantages of the present application will be further described with reference to the accompanying drawings. DETAILED DESCRIPTION

[0025] In order to make the purpose, technical solutions and advantages of the present application more clear, the technical solutions in the embodiments of the present application will be described clearly and completely with reference to the accompanying drawings. Obviously, the described embodiments are only some of the embodiments of the present application, but not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work fall within the scope of protection of the present application.

[0026] It should be noted that all directional indications (such as up, down, left, right, front, back, etc.) in the embodiments of the present application are only used to explain the relative positional relationship, movement condition, etc. between components in a certain posture (as shown in the drawings), and if the certain posture changes, the directional indications will also change accordingly.

[0027] In the present application, unless otherwise explicitly specified and limited, the terms "connection", "fixation" and the like should be understood broadly, for example, "fixation" can be fixed connection, or detachable connection, or integral; can be mechanical connection, or electrical connection; can be direct connection, or indirect connection through intermediate medium; can be internal connection of two elements or interaction relationship between two elements, unless otherwise explicitly limited. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0028] In addition, if the description of "first", "second" and the like is involved in the embodiments of the present application, the description of "first", "second" and the like is only for the purpose of description, and cannot be understood as indicating or implying the relative importance of the indicated technical features or implicitly indicating the number of the indicated technical features. Therefore, the features limited by "first", "second" can be explicitly or implicitly included at least one of the features. In addition, the meaning of "and / or" appearing throughout the text includes three parallel schemes. For example, "A and / or B" includes A scheme, or B scheme, or A and B scheme. In addition, the technical solutions of each embodiment can be combined with each other, but it must be based on the realization of ordinary skilled in the art. When the combination of technical solutions appears contradictory or unachievable, it should be considered that the combination of technical solutions does not exist, and is not within the protection scope required by the present application.

[0029] After the chemical vapor deposition film is formed on the wafer surface, the wafer needs to be irradiated with ultraviolet light for curing. The ultraviolet light has enough energy to excite the photosensitive substances in the film, induce photochemical reaction, and break some chemical bonds in the film, thereby obtaining an oxide film with higher purity. When curing the oxide film, the ultraviolet light is turned on, and after being reflected by a secondary reflector, the light path tends to be parallel, uniformly irradiating the quartz window and other optical components, and finally reaching the wafer surface. Since the optical structure of the ultraviolet light lamp cannot make the light intensity completely uniform at all places of the wafer, the machine adopts the rotating mode of the ultraviolet light lamp. However, due to the difference in light intensity in the parallel direction of the ultraviolet light lamp, the thickness and quality of the wafer film show a ring-shaped distribution, resulting in low uniformity of the thickness and quality of the wafer film. In view of the above problems, the embodiments of the present application provide the following technical solutions to overcome the above problems.

[0030] Please refer to Figures 1 to 3 The embodiments of the present application provide a dimming glass, which comprises a first glass substrate 100, a conductive oxide film strip 200 and a second glass substrate 300 arranged in sequence along a first direction; the conductive oxide film strip 200 has a plurality of conductive oxide film strips 200, and the plurality of conductive oxide film strips 200 are distributed concentrically and in increasing diameter along the plane where the second direction and the third direction are located, and the adjacent conductive oxide film strips 200 are arranged at intervals, wherein the first direction, the second direction and the third direction are perpendicular to each other.

[0031] Specifically, Figure 1The Z direction in the figure is the first direction, the X direction is the second direction, and the Y direction is the third direction. The first glass substrate 100, the conductive oxide film strip 200, and the second glass substrate 300 are stacked in sequence along the first direction, wherein the conductive oxide film strip 200 has a plurality of strips, is arranged concentrically along the plane where the second direction and the third direction are located, and the plurality of conductive oxide film strips 200 are distributed in increasing diameter, and adjacent conductive oxide film strips 200 are arranged at intervals.

[0032] It can be understood that the width of the conductive oxide film strip 200 is set according to the wafer surface film thickness distribution map when the light-adjustable glass is applied to the quartz window in the wafer film curing process. Since the film thickness of the wafer after the conventional method is cured is distributed in a ring shape, the film with approximately the same thickness is in a ring-shaped area, and therefore, the width of the conductive oxide film strip 200 needs to include the ring-shaped area with approximately the same thickness of the film.

[0033] During the process of depositing a film on the wafer surface, the conductive oxide film strip 200 corresponding to the wafer surface film thickness over-thick area is powered on, so that the energy of the ultraviolet light transmitted through the conductive oxide film strip 200 is higher, which can make the ultraviolet light emitted by the ultraviolet lamp transmit from the conductive oxide film strip 200 to the wafer surface film thickness over-thick area. After the ultraviolet light irradiation, the film in the over-thick area will shrink thinner to reduce the thickness of the film at this position. The conductive oxide film strip 200 corresponding to the wafer surface film thickness over-thin area is powered off or the power-on time is reduced, so that the energy of the ultraviolet light transmitted through the conductive oxide film strip 200 at this position is lower, which can make the ultraviolet light emitted by the ultraviolet lamp transmit from the conductive oxide film strip 200 to the wafer surface film thickness over-thin area. After the irradiation of the ultraviolet light with lower energy, the film in the over-thin area shrinks less, which can make the film thickness of the wafer surface over-thick area and over-thin area more uniform.

[0034] It should be noted that the light-adjustable principle of the light-adjustable glass is to use the optical properties of liquid crystals; when the conductive oxide film strip 200 is not powered on, the liquid crystal molecules are irregularly distributed, at this time the light-adjustable glass presents a opaque milky white color, and the light-adjustable glass has insulation and reflection effect on light, which can block more than 90% of infrared rays and ultraviolet light. When the conductive oxide film strip 200 is powered on, the liquid crystal molecules are arranged uniformly, which can present a transparent state. In addition, the change of the strength of the current controls the transparency of the light-adjustable glass.

[0035] The application provides a dimming glass, which is characterized in that a plurality of conductive oxide film strips 200 are arranged between a first glass substrate 100 and a second glass substrate 300, the plurality of conductive oxide film strips 200 are concentrically arranged, the plurality of conductive oxide film strips 200 are arranged in a manner that their diameters increase gradually, adjacent conductive oxide film strips 200 are arranged in a spaced manner, and the plurality of conductive oxide film strips 200 are powered off and powered on to adjust the light transmittance of the dimming glass, so that the dimming glass can block or transmit ultraviolet light when applied in a film curing process, and the ultraviolet light can uniformly irradiate the wafer surface, the uniformity of the thickness and quality of the deposited film on the wafer surface is improved, and the quality and yield of the wafer are further improved.

[0036] Please refer to Figures 2 to 5 In the embodiment of the application, the conductive oxide film strip 200 is provided with an insulating strip 210, one side of the insulating strip 210 is a first electrode 211, and the other side of the insulating strip 210 is a second electrode 212.

[0037] Specifically, the insulating strip 210 is arranged on the conductive oxide film strip 200, so that the conductive oxide film strip 200 forms an open circuit at the insulating strip 210, at this time, one side of the insulating strip 210 is connected to the first electrode 211, the other side of the insulating strip 210 is connected to the second electrode 212, the first electrode 211 and the second electrode 212 are connected to an external power supply, so that the conductive oxide film strip 200 forms a loop, the conductivity of the conductive oxide film strip 200 can be controlled by changing the voltage between the first electrode 211 and the second electrode 212, and then the light transmittance of the region where the conductive oxide film strip 200 is located can be adjusted.

[0038] In use, the voltage between the first electrode 211 and the second electrode 212 is flexibly controlled according to the requirement of the thickness of the deposited film on the wafer surface. When the deposited film on a certain region of the wafer surface is relatively thin, the voltage between the first electrode 211 and the second electrode 212 on the conductive oxide film strip 200 corresponding to the region is increased, the light transmittance of the conductive oxide film strip 200 is reduced, the energy of the ultraviolet light transmitted through the conductive oxide film strip 200 is lower, and the shrinkage of the film thickness corresponding to the conductive oxide film strip 200 is reduced. When the deposited film on a certain region of the wafer surface is relatively thick, the voltage between the first electrode 211 and the second electrode 212 on the conductive oxide film strip 200 corresponding to the region is reduced, the light transmittance of the conductive oxide film strip 200 is increased, the energy of the ultraviolet light transmitted through the conductive oxide film strip 200 is higher, and the shrinkage of the film thickness corresponding to the conductive oxide film strip 200 is increased, so that the film thickness is further reduced. The thickness and quality of the film on the wafer surface are more uniform.

[0039] It should be noted that in the above process, the voltage between the first electrode 211 and the second electrode 212 of each region can be kept unchanged, and the film thickness can be adjusted by changing the on / off time ratio of each region.

[0040] In the embodiment of the present application, the insulating strips 210 are distributed along the second direction and the third direction; the insulating strips 210 separate the light-transmitting areas 220 on the conductive oxide film strips 200.

[0041] Specifically, the insulating strips 210 are arranged on each conductive oxide film strip 200 along the second direction and the third direction, and the insulating strips 210 separate the light-transmitting areas 220 on the conductive oxide film strips 200, and the light transmittance of each light-transmitting area 220 is adjusted respectively, so as to control the thickness of the film on the corresponding region of the wafer surface, and the uniformity of the film thickness on the wafer surface is improved.

[0042] In use, the light-transmitting area 220 corresponding to the region where the film on the wafer surface is easy to deposit and the film is thick is powered on, so that the ultraviolet light energy transmitted by the light-transmitting area 220 is higher, and the thickness of the film on the wafer surface in the curing process is thinner. The light-transmitting area 220 corresponding to the region where the film on the wafer surface is easy to deposit and the film is thin is powered off or the power-on time is reduced, so that the ultraviolet light energy transmitted by the light-transmitting area 220 is lower, and the shrinkage amount of the film on the wafer surface in the curing process is reduced, and the film thickness of the thick region and the thin region on the wafer surface is further uniform.

[0043] In the embodiment of the present application, an insulating strip 210 is arranged every 30°-60° along the arc of the conductive oxide film strip, and the insulating strip 210 separates the light-transmitting areas 220 on the conductive oxide film strip 200.

[0044] Specifically, an insulating strip 210 is arranged every 30°-60° on each conductive oxide film strip, and the conductive oxide film strip is separated into a plurality of light-transmitting areas 220, and each light-transmitting area 220 can independently respond to voltage changes, so as to control the light transmittance. The insulating strip 210 ensures electrical isolation between adjacent light-transmitting areas 220, prevents current from flowing from one light-transmitting area 220 to another light-transmitting area 220, and allows precise voltage control of each light-transmitting area 220. And the more light-transmitting areas 220 are arranged, the more accurate the adjustment of ultraviolet light is, and the more uniform the distribution of ultraviolet light is, so as to further improve the uniformity of the film thickness after curing.

[0045] In the embodiment of the present application, the light-transmitting areas 220 on the same conductive oxide film strip 200 are connected in parallel.

[0046] Specifically, the parallel connection between the light transmission zones 220 means that they share the same voltage. When the voltage is applied to the conductive oxide film strip 200, the current can flow through any one of the light transmission zones 220, thereby reducing the overall resistance and improving the conductivity. The parallel connection also helps to evenly distribute the current, so that each light transmission zone 220 is evenly affected by the voltage, which is crucial for achieving uniform dimming effect.

[0047] It should be noted that when the same conductive oxide film strip 200 needs different light transmission rates, the light transmission zones 220 that need to be shielded from light can be powered off. Since the light transmission zones 220 are connected in parallel, the conductive oxide film strip 200 is still a conductive loop, and the power-on of other light transmission zones 220 does not affect the light transmission.

[0048] Please refer to Figures 2 to 5 In the embodiments of the present application, an insulating ring 230 is arranged between adjacent conductive oxide film strips 200, the inner ring of the conductive oxide film strip 200 is a first electrode 211, and the outer ring of the conductive oxide film strip 200 is a second electrode 212.

[0049] Specifically, the insulating ring 230 isolates adjacent conductive oxide film strips 200, ensuring that there is no direct current flow between them. This allows independent control of the electrical conductivity and light transmission of each conductive oxide film strip 200. The inner ring of the conductive oxide film strip 200 is arranged as a first electrode 211, and the outer ring is arranged as a second electrode 212, so that the conductive oxide film strip 200 forms a closed loop after being connected to a power supply, and the electrical conductivity of the film strip is adjusted by changing the voltage. Moreover, the arrangement of the insulating ring 230 allows independent control of each conductive oxide film strip 200, which allows more precise adjustment of the light transmission rate of the dimming glass and achieves more complex dimming requirements.

[0050] In the embodiments of the present application, each of the conductive oxide film strips 200 is connected in parallel.

[0051] As can be understood, in a parallel circuit, current can freely flow through each conductive oxide film strip 200, and if the resistance of one of the film strips changes (for example, due to a change in its electrical conductivity for dimming needs), the current flow of the other conductive oxide film strips 200 can still be maintained. The parallel connection improves the reliability of the dimming glass. Even if one of the conductive oxide film strips 200 fails, the others can still work, ensuring the basic function of the dimming glass. Since each conductive oxide film strip 200 is independently controlled, this can improve the response speed of the dimming glass to voltage changes, making the dimming process more rapid. If the dimming glass of the quartz window fails, the uniform parallel design can prevent uneven distribution of ultraviolet light, thereby avoiding damage to the wafer and improving the safety of the operation.

[0052] In the embodiments of the present application, the total thickness of the first glass substrate 100, the conductive oxide thin film strip 200 and the second glass substrate 300 is 4mm-6mm.

[0053] It can be understood that setting the total thickness of the first glass substrate 100, the conductive oxide thin film strip 200 and the second glass substrate 300 in the range of 4mm-6mm can ensure the overall structural stability and mechanical strength of the dimmable glass. This thickness range helps to maintain the integrity of the first glass substrate 100 and the second glass substrate 300, while providing sufficient support to protect the conductive oxide thin film strip 200. The appropriate thickness can ensure the optical performance of the dimmable glass, including the light transmittance and scattering. Too thin cannot provide sufficient light control, too thick will cause unnecessary light scattering and energy loss.

[0054] The embodiments of the present application provide a chemical vapor deposition device, which comprises an ultraviolet lamp, a quartz window, a shower head and a reaction chamber, the quartz window and the shower head can both use the dimmable glass as described above to adjust the intensity of ultraviolet light in different areas.

[0055] Specifically, in the chemical vapor deposition device, the dimmable glass is used as the quartz window and the shower head, by setting the insulating strip 210 and the conductive oxide thin film strip 200 on the dimmable glass, local control of the intensity of ultraviolet light can be achieved, which is crucial for accurately controlling the chemical reaction in the chemical vapor deposition thin film process. By accurately controlling the intensity of ultraviolet light, the shrinkage of the thin film in different areas of the wafer surface can be adjusted, so that a more uniform and higher quality thin film is formed on the wafer surface.

[0056] The embodiments of the present application provide a semiconductor manufacturing equipment, which comprises a chemical vapor deposition device as described above, for curing the thin film after depositing the thin film on the wafer surface.

[0057] Specifically, in the semiconductor manufacturing equipment, the chemical vapor deposition device is used to deposit the thin film on the wafer surface, and the chemical vapor deposition device combined with the dimmable glass technology can adjust the intensity of ultraviolet light in different areas after depositing the thin film, and then adjust the shrinkage of the thin film in different areas of the wafer surface, so that a more uniform and higher quality thin film is formed on the wafer surface.

[0058] The above is only a specific implementation of the embodiments of the present application, but the protection scope of the embodiments of the present application is not limited to this, any change or replacement within the technical scope disclosed in the embodiments of the present application should be covered in the protection scope of the embodiments of the present application. Therefore, the protection scope of the embodiments of the present application should be subject to the protection scope of the claims.

Claims

1. A light-adjustable glass, characterized by, The conductive oxide film strip is provided with an insulating strip, one side of the insulating strip is a first electrode, and the other side of the insulating strip is a second electrode. The conductive oxide film strip is provided with an insulating strip, one side of the insulating strip is a first electrode, and the other side of the insulating strip is a second electrode.

2. The dimmable glass according to claim 1, wherein, The insulating strip is distributed along the second direction and the third direction.

3. The dimmable glass according to claim 2, wherein, The insulating strip separates a light-transmitting area on the conductive oxide film strip. Along the arc of the conductive oxide film strip, an insulating strip is provided every 30-60 degrees, and the insulating strip separates a light-transmitting area on the conductive oxide film strip.

4. The dimmable glass of claim 2, wherein, The light-transmitting areas on the same conductive oxide film strip are connected in parallel.

5. The switchable glass according to any one of claims 3 or 4, wherein the glass comprises a plurality of layers of the first and second glass sheets. An insulating ring is provided between adjacent conductive oxide film strips, the inner ring of the conductive oxide film strip is a first electrode, and the outer ring of the conductive oxide film strip is a second electrode.

6. The switchable glass of claim 1, wherein, Each conductive oxide film strip is connected in parallel.

7. The switchable glass of any of claims 1-4 or 6, wherein the glass comprises: The total thickness of the first glass substrate, the conductive oxide film strip, and the second glass substrate is 4-6 mm.

8. The switchable glass of claim 7, wherein, The light-adjustable glass of any one of claims 1-8 is used for adjusting the intensity of ultraviolet light in different areas.

9. A chemical vapor deposition apparatus characterized by comprising: The chemical vapor deposition device of claim 9 is used for curing the thin film after the thin film is deposited on the wafer surface.

10. A semiconductor manufacturing apparatus, characterized by comprising: ​

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