Preparation device of nanoscale silicon carbide film

Abstract

The utility model discloses a nanoscale silicon carbide film preparation device, which relates to the technical field of silicon carbide films, and comprises a preparation mechanism, a gas transmission mechanism is arranged in the preparation mechanism, a tail gas treatment mechanism is arranged on one side of the preparation mechanism, and the tail gas treatment mechanism comprises a combustion chamber. A combustion nozzle externally connected with a natural gas and oxygen mixed gas conveying pipe is arranged at the bottom of an inner cavity of the combustion chamber, an electric fire maker is arranged at the top of the combustion nozzle, and one side of the combustion chamber communicates with an air purifier through a pipeline. The tail gas treatment mechanism is arranged, natural gas and oxygen are mixed to serve as auxiliary fuel, combustible and harmful ingredients such as silane and acetylene in tail gas are converted into harmless oxide such as carbon dioxide and water by means of combustion reaction, and then acid-base gas in the tail gas subjected to combustion treatment is treated through the air purifier. And air pollution caused by direct emission is avoided.

Description

TECHNICAL FIELD

[0001] The utility model relates to the technical field of silicon carbide film, specifically relates to a preparation device of nanometer silicon carbide film. BACKGROUND

[0002] The silicon carbide film is a kind of film material composed of silicon carbide, and the preparation method has chemical vapor deposition method, which is one of the most commonly used preparation methods.For example, silane and hydrocarbon are used as reaction gas, and under the conditions of high temperature and certain pressure, silicon carbide film is deposited on the substrate surface by chemical reaction.The reaction gas is decomposed under the energy excitation of heating or plasma, and the silicon atom and carbon atom generated are combined to form silicon carbide on the substrate surface.

[0003] But the existing chemical vapor deposition method, when preparing nanometer silicon carbide film, the chemical reaction in the preparation cavity is not balanced, which leads to the uneven thickness of the prepared nanometer silicon carbide film, and at the same time, in the preparation process, a large amount of harmful gas containing residual silane and hydrocarbon is generated, direct emission will pollute the atmosphere, and there is certain inconvenience. UTILITY MODEL CONTENT

[0004] The utility model provides a preparation device of nanometer silicon carbide film to solve the problems in the above background technology.

[0005] To solve the above technical problems, the technical scheme adopted by the utility model is:

[0006] A preparation device of nanometer silicon carbide film, comprising a preparation mechanism, a gas conveying mechanism is arranged in the inside of the preparation mechanism, a tail gas treatment mechanism is arranged on one side of the preparation mechanism, the tail gas treatment mechanism comprises a combustion chamber, a combustion nozzle of an external natural gas and oxygen mixed gas conveying pipe is arranged at the bottom of the inner cavity of the combustion chamber, an electric lighter is arranged at the top of the combustion nozzle, and an air purifier is communicated with the combustion chamber on one side through a pipeline.

[0007] The further improvement of the technical scheme of the utility model is that the preparation mechanism comprises a preparation box, a sealing door is arranged on the front of the preparation box, and a control panel is fixedly connected to the front of the preparation box.

[0008] The further improvement of the technical scheme of the utility model is that the inner wall of the preparation box is fixedly connected with a graphite heating element, and the graphite heating element is electrically connected with the control panel.

[0009] The further improvement of the technical scheme of the utility model is that the inner wall of the graphite heating element is provided with a ceramic liner, and the inner wall of the preparation box is fixedly connected with a motor.

[0010] The further improvement in the utility model technical scheme lies in that: the top of the motor rotating shaft is fixedly connected with a ceramic turntable through a ceramic rotating shaft, the top of the ceramic turntable is overlapped with a substrate, the bottom of the ceramic inner container inner cavity is provided with an air exhaust pipe, the inside of the air exhaust pipe is provided with a vacuum pump, and one end of the air exhaust pipe is communicated with the combustion chamber.

[0011] The further improvement in the utility model technical scheme lies in that: the gas conveying mechanism comprises a mixing cavity.

[0012] The further improvement in the utility model technical scheme lies in that: the middle part of the mixing cavity inner cavity is provided with a mixing fan, the other end of the mixing cavity inner cavity is provided with a second blocking plate, and one side of the mixing cavity inner cavity is provided with a gas conveying pipe communicated with the inside of the ceramic inner container.

[0013] The further improvement in the utility model technical scheme lies in that: the other side of the mixing cavity inner cavity is provided with an air inlet pipe, one end of the air inlet pipe is provided with an air inlet branch pipe additionally provided with a flow controller inside, the air inlet branch pipe is provided with three groups, and is communicated with a silane gas source steel cylinder, an acetylene gas source steel cylinder and an argon gas source steel cylinder respectively.

[0014] Due to the adoption of the above technical scheme, the utility model has the following technical progress compared with the prior art:

[0015] The utility model provides a kind of preparation device of nanometer silicon carbide film, by the setting of tail gas treatment mechanism, using natural gas mixed oxygen as auxiliary fuel, by means of combustion reaction, combustible and harmful ingredients such as silane, acetylene in tail gas are converted into harmless oxides such as carbon dioxide, water, then again after air purifier is handled to the acid-base gas in tail gas of combustion processing, avoid direct emission to cause pollution to atmosphere, while in the process of preparation, motor is rotated by ceramic rotating shaft and drives substrate, make substrate rotate at uniform speed in deposition process, promote reaction gas evenly cover each area of substrate, improve the uniformity of thin film deposition, make it more convenient to use. BRIEF DESCRIPTION OF DRAWINGS

[0016] Figure 1 It is the front view structure schematic drawing of the utility model;

[0017] Figure 2 It is the sealing door opening state structure schematic drawing of the utility model;

[0018] Figure 3 It is the internal structure schematic drawing of the utility model;

[0019] Figure 4 It is the gas conveying mechanism internal structure schematic drawing of the utility model;

[0020] Figure 5The tail gas treatment mechanism structural schematic view of the utility model.

[0021] In the figure: 11, preparation box; 12, sealing door; 13, control panel; 14, graphite heating element; 15, ceramic inner bag; 16, motor; 17, ceramic turntable; 18, substrate; 19, air extraction pipe; 110, vacuum pump; 21, mixing cavity; 22, first barrier plate; 23, mixing fan; 24, second barrier plate; 25, gas conveying pipe; 26, air inlet pipe; 27, air inlet branch pipe; 31, combustion chamber; 32, combustion nozzle; 33, electric igniter; 34, pipeline; 35, air purifier. DETAILED DESCRIPTION

[0022] The utility model will be further explained in detail in connection with the following examples:

[0023] Example 1

[0024] As Figures 1-5 shown, the utility model provides a kind of preparation device of nanometer silicon carbide film, including preparation mechanism, gas conveying mechanism is arranged in the inside of preparation mechanism, the side of preparation mechanism is provided with tail gas treatment mechanism, tail gas treatment mechanism includes combustion chamber 31, the bottom of combustion chamber 31 inner chamber is provided with the combustion nozzle 32 of external natural gas and oxygen mixed gas gas conveying pipe, the top of combustion nozzle 32 is provided with electric igniter 33, and combustion chamber 31 side is communicated with air purifier 35 by pipeline 34.

[0025] In the embodiment, by the tail gas mixed with acetylene, silane extracted by vacuum pump 110, when entering combustion chamber 31, by electric igniter 33, natural gas and oxygen mixed gas by combustion nozzle 32 are ignited, combustion-supporting is carried out to tail gas, and by combustion reaction, acetylene, silane and other combustible gas in tail gas are removed, then under the action of air purifier, acid-base gas in tail gas is purified, to avoid its direct emission to atmosphere, cause pollution to atmosphere.

[0026] Example 2

[0027] As Figures 1-5As shown, on the basis of embodiment 1, the utility model provides a technical scheme: preferably, preparation mechanism includes preparation box 11, the front of preparation box 11 is provided with sealing door 12, and the front of preparation box 11 is fixedly connected with control panel 13, and the inner wall of preparation box 11 is fixedly connected with graphite heating element 14, and graphite heating element 14 is electrically connected with control panel 13, and the inner wall of graphite heating element 14 is provided with ceramic inner bag 15, and the inner wall of preparation box 11 is fixedly connected with motor 16, and the top of motor 16 rotating shaft is fixedly connected with ceramic turntable 17 through ceramic rotating shaft, and the top of ceramic turntable 17 is overlapped with substrate 18, and the bottom of ceramic inner bag 15 inner chamber is provided with suction pipe 19, and the inside of suction pipe 19 is provided with vacuum pump 110, and one end of suction pipe 19 is communicated with combustion chamber 31.

[0028] In the embodiment, when preparing nanoscale silicon carbide film, substrate 18 is placed to the surface of ceramic turntable 17, then sealing door 12 is closed, vacuum pump 110 is started, air in ceramic inner bag is extracted through suction pipe 19, so that the air pressure reaches a predetermined value, ceramic inner bag 15 is heated under the action of graphite heating element 14, so that the temperature in ceramic inner bag 15 reaches a suitable temperature, mixed gas produces chemical reaction, and nanoscale silicon carbide film is formed on the surface of substrate, when depositing, ceramic turntable 17 is driven to rotate by motor 16, so that substrate 18 rotates with the rotation, so that reaction gas uniformly covers each area of substrate, and the uniformity of film deposition is improved.

[0029] Embodiment 3

[0030] As Figures 1-5 As shown, on the basis of embodiment 1, the utility model provides a technical scheme: preferably, gas conveying mechanism includes mixing cavity 21, one end of the inner chamber of mixing cavity 21 is provided with first baffle 22, the middle part of the inner chamber of mixing cavity 21 is provided with mixing fan 23, the other end of the inner chamber of mixing cavity 21 is provided with second baffle 24, one side of the inner chamber of mixing cavity 21 is provided with gas conveying pipe 25 communicated with the inside of ceramic inner bag 15, the other side of the inner chamber of mixing cavity 21 is provided with air inlet pipe 26, one end of air inlet pipe 26 is provided with air inlet branch pipe 27 with flow controller, air inlet branch pipe 27 is provided with three groups, and is communicated with silane gas source cylinder, acetylene gas source cylinder and argon gas source cylinder respectively.

[0031] In this embodiment, silane, acetylene, and argon gas source cylinders connected to the inlet branch pipe 27 are used to supply gas to the inlet pipe 26. During the supply process, the flow controller inside the inlet branch pipe 27 controls the input ratio of each gas. After the mixed gas enters the mixing chamber 21, the gas flow rate is slowed down by the first baffle plate 22. The gas is initially mixed by the collision between the airflow and the disc of the first baffle plate 22. The gas is then mixed a second time by the cutting action of the blades of the mixing fan 23. Subsequently, the gas is mixed again by the collision with the surface of the second baffle plate 24, thereby improving the uniformity of the gas mixing.

[0032] The working principle of the device for preparing nanoscale silicon carbide thin films will be explained in detail below.

[0033] like Figures 1-5 As shown, in the preparation of nanoscale silicon carbide thin films, the substrate 18 is placed on the surface of the ceramic turntable 17, then the sealing door 12 is closed, and the vacuum pump 110 is started to extract the air from the ceramic inner liner through the suction pipe 19 until the air pressure reaches a predetermined value. Then, through the silane gas cylinder, acetylene gas cylinder, and argon gas cylinder connected to the external air intake branch pipe 27, the gas is transported into the air intake pipe 26 through the air intake branch pipe 27. At the same time, during the transportation process, the flow controller in the air intake branch pipe 27 controls the input ratio of each gas. After the mixed gas enters the mixing chamber 21, the gas flow rate is slowed down by the first baffle plate 22. At the same time, the gas is initially mixed by the collision of the airflow with the disk of the first baffle plate 22. The gas is then mixed a second time by the cutting action of the blades of the mixing fan 23. Subsequently, the gas collides with the surface of the second baffle plate 24, and the gas is mixed again, improving the uniformity of gas mixing. The mixed gas enters the ceramic inner liner 15 through the gas supply pipe 25. Under the action of the graphite heating element 14, the ceramic inner liner 15 is heated to a suitable temperature, causing the mixed gas to undergo a chemical reaction and deposit a nanoscale silicon carbide thin film on the substrate surface. During deposition, the ceramic turntable 17 is rotated by the motor 16, causing the substrate 18 to rotate as well, so that the reaction gas evenly covers all areas of the substrate, improving the uniformity of film deposition. The exhaust gas mixed with acetylene and silane, extracted by the vacuum pump 110, enters the combustion chamber 31 and is ignited by the electric igniter 33, which ignites the natural gas and oxygen mixture sprayed from the burner 32 to assist combustion of the exhaust gas. The combustion reaction removes flammable gases such as acetylene and silane from the exhaust gas. Subsequently, the acid and alkaline gases in the exhaust gas are purified by the air purifier to prevent them from being directly emitted into the atmosphere and causing air pollution.

[0034] The utility model has made the detailed description to the utility model generally above, but can make some modification or improvement to it on the basis of the utility model, and this is obvious to the general skilled person in the technical field. Therefore, the modification or improvement without departing from the utility model's thought spirit, all are within the utility model's protection scope.

Claims

1. An apparatus for preparing nanoscale silicon carbide thin films, comprising a preparation mechanism, characterized in that: The preparation mechanism is equipped with a gas supply mechanism inside, and a tail gas treatment mechanism is provided on one side of the preparation mechanism. The tail gas treatment mechanism includes a combustion chamber (31). A burner (32) connected to an external natural gas and oxygen mixed gas supply pipe is provided at the bottom of the inner cavity of the combustion chamber (31). An electric igniter (33) is provided at the top of the burner (32). An air purifier (35) is connected to one side of the combustion chamber (31) through a pipe (34).

2. The apparatus for preparing nanoscale silicon carbide thin films according to claim 1, characterized in that: The preparation mechanism includes a preparation box (11), a sealing door (12) is provided on the front of the preparation box (11), and a control panel (13) is fixedly connected to the front of the preparation box (11).

3. The apparatus for preparing nanoscale silicon carbide thin films according to claim 2, characterized in that: A graphite heating element (14) is fixedly connected to the inner wall of the preparation box (11), and the graphite heating element (14) is electrically connected to the control panel (13).

4. The apparatus for preparing nanoscale silicon carbide thin films according to claim 3, characterized in that: The inner wall of the graphite heating element (14) is provided with a ceramic inner liner (15), and the inner wall of the preparation box (11) is fixedly connected with a motor (16).

5. The apparatus for preparing nanoscale silicon carbide thin films according to claim 4, characterized in that: The top of the motor (16) shaft is fixedly connected to a ceramic turntable (17) via a ceramic shaft. The top of the ceramic turntable (17) is covered with a substrate (18). A vacuum pipe (19) is provided at the bottom of the inner cavity of the ceramic inner liner (15). A vacuum pump (110) is provided inside the vacuum pipe (19). One end of the vacuum pipe (19) is connected to the combustion chamber (31).

6. The apparatus for preparing nanoscale silicon carbide thin films according to claim 1, characterized in that: The gas delivery mechanism includes a mixing chamber (21), and a first baffle plate (22) is provided at one end of the inner cavity of the mixing chamber (21).

7. The apparatus for preparing nanoscale silicon carbide thin films according to claim 6, characterized in that: A mixing fan (23) is provided in the middle of the inner cavity of the mixing chamber (21), a second baffle plate (24) is provided at the other end of the inner cavity of the mixing chamber (21), and a gas supply pipe (25) communicating with the inside of the ceramic inner liner (15) is provided on one side of the inner cavity of the mixing chamber (21).

8. The apparatus for preparing nanoscale silicon carbide thin films according to claim 7, characterized in that: An air inlet pipe (26) is provided on the other side of the inner cavity of the mixing chamber (21). One end of the air inlet pipe (26) is provided with an air inlet branch pipe (27) with an internal flow controller. The air inlet branch pipe (27) is provided in three sets, which are respectively connected to the silane gas source cylinder, the acetylene gas source cylinder and the argon gas source cylinder.

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