Chamber structure

By designing an insulating platform in the chamber structure to electrically isolate it from the ion source, the breakdown problem when high voltage is introduced into the chamber is solved, ensuring the stable and safe operation of the equipment.

CN223665406UActive Publication Date: 2025-12-12SABERS CO LTD
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Patent Information

Application Number
CN202423013041.2
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-12-06
Publication Date
2025-12-12
Estimated Expiration
2034-12-06

AI Technical Summary

Technical Problem

In semiconductor material manufacturing, how to introduce high voltage into the chamber and prevent the chamber from being broken down by the high voltage is a problem.

Method used

A chamber structure was designed in which the ion source is electrically isolated from the chamber wall through an insulating platform, and current leakage is prevented and high voltage breakdown is avoided through the reasonable layout of the insulating cylinder and connectors.

Benefits of technology

This ensured the normal introduction and operation of high-voltage electricity, prevented the breakdown of the chamber wall, and guaranteed the stability and safety of the equipment.

✦ Generated by Eureka AI based on patent content.

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Abstract

The utility model relates to the technical field of semiconductor material processing equipment, in particular to a cavity structure, which comprises a cavity body, the cavity body is defined by a plurality of wall plates, one of the wall plates is a first wall plate, and the first wall plate is provided with an opening; the insulating platform is provided with an insulating cylinder and a first connecting piece and a second connecting piece which are arranged at the two ends of the insulating cylinder, and the first connecting piece is connected to the periphery of the opening of the first wall plate in a sealed mode so that the opening can be communicated with the interior of the insulating platform; the end face of the insulating cylinder is blocked by the second connecting piece; a through hole is pre-formed in the second connecting piece, and the pre-formed through hole serves as a channel for an external conductive piece to be connected into the insulating platform; the ion source is located in the cavity body, the ion source is provided with an electric connecting end, and the electric connecting end is connected to the second connecting piece; and the ion source is not in contact with the first wall plate. The chamber structure can introduce high-voltage electricity into the chamber body and can prevent high-voltage breakdown.
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Description

Technical Field

[0001] This application relates to the field of semiconductor material processing equipment technology, and in particular to a chamber structure. Background Technology

[0002] In semiconductor material manufacturing technology, bonding technology is widely used to bond two wafers together. Before wafer bonding, the surfaces of the wafers to be bonded need to be surface-treated, for example, by forming an ionized gas beam to bombard the bonding surfaces of the wafers. The formation of the beam and the process of bombarding the wafers need to be carried out in a high-voltage, high-vacuum process chamber. How to introduce high voltage into the chamber and prevent the chamber from being broken down by high voltage is a problem. Utility Model Content

[0003] The purpose of this invention is to provide a chamber structure that can introduce high voltage electricity into the chamber body and prevent high voltage breakdown.

[0004] To achieve this objective, the present invention adopts the following technical solution:

[0005] A chamber structure includes: a chamber body, the chamber body being formed by a plurality of wall panels, wherein one of the wall panels is a first wall panel, and the first wall panel has an opening;

[0006] An insulating platform has an insulating cylinder and a first connector and a second connector disposed at both ends of the insulating cylinder. The first connector is sealed to the periphery of the opening of the first wall panel, so that the opening communicates with the interior of the insulating platform.

[0007] The second connector seals one end of the insulating cylinder;

[0008] Preferably, the second connector seals the end face of the insulating cylinder;

[0009] The second connector has a pre-set through hole, which serves as a channel for external conductive components to access the insulating platform;

[0010] An ion source is located in the chamber body, and the ion source has an electrical connection terminal, which is connected to the second connector;

[0011] The ion source is not in contact with the first wall panel.

[0012] Furthermore, the first wall panel is the bottom plate of the chamber body;

[0013] The ion source is mounted on the second connector via an electrical connection terminal, so that the second connector bears the load.

[0014] Furthermore, the non-connecting end of the first connector and the insulating cylinder is provided with a mounting flange;

[0015] The insulating platform is sealed to the first wall panel via the mounting flange.

[0016] Preferably, the mounting flange has an annular groove on the side facing the first wall panel, and a sealing ring is provided in the annular groove;

[0017] Furthermore, the second connector is a stainless steel wiring flange;

[0018] The second connector is provided with reinforcing ribs.

[0019] Furthermore, the vertical distance between the first connector and the second connector is not less than S;

[0020] Where S represents the maximum voltage through the second connector in kilovolts, with each kilovolt corresponding to 1 mm. For example, when the maximum voltage through the second connector is 10 kilovolts, then S is 10 mm, and the vertical distance between the first connector and the second connector is not less than 10 mm; when the maximum voltage through the second connector is 30 kilovolts, then S is 30 mm, and the vertical distance between the first connector and the second connector is not less than 30 mm; when the maximum voltage through the second connector is 60 kilovolts, then S is 60 mm, and the vertical distance between the first connector and the second connector is not less than 60 mm.

[0021] Furthermore, the insulating cylinder is made of ceramic material.

[0022] Furthermore, the wall of the insulating cylinder has a pleated structure.

[0023] Furthermore, the first connector and the second connector are welded to both ends of the insulating cylinder.

[0024] Furthermore, it also includes a power supply box, which contains a power supply unit;

[0025] The power supply box is positioned below the insulating platform;

[0026] A conductive element connects the power supply group to the ion source via the insulating platform.

[0027] A support component is disposed between the power supply box and the insulating platform.

[0028] Furthermore, the support member is cylindrical and encloses the conductive member.

[0029] The beneficial effects of this invention are as follows: By mounting the ion source on an insulating platform, with the electrical connection end of the ion source in electrical contact with the second connector of the insulating platform, the ion source can be powered by high-voltage electricity. Simultaneously, through a rational design, the ion source is prevented from contacting the first wall panel, achieving electrical isolation between the ion source and the chamber wall. The insulating cylinder of the insulating platform has a predetermined distance, and the pleated structure of the cylinder wall acts as an excellent insulating barrier. When the ion source is operating, the insulating platform prevents current leakage from the ion source through potential paths such as the chamber wall, thus fundamentally avoiding breakdown phenomena that may be caused by current leakage. In this way, the risk of high-voltage electricity being conducted to the chamber wall via the ion source is successfully eliminated, effectively ensuring that the chamber wall will not suffer breakdown damage due to excessively high electric field strength, thereby guaranteeing the stable, safe, and efficient operation of the entire ion source system. Attached Figure Description

[0030] Fig. 1 This is a schematic diagram of the overall structure of a chamber structure according to the present invention;

[0031] Fig. 2 This is a schematic diagram of the insulating platform structure of this utility model;

[0032] Fig. 3 This is a schematic diagram of the structure of the second connecting member of this utility model.

[0033] In the diagram: 1. Chamber body; 2. Ion source; 3. Insulating cylinder; 4. Mounting flange; 5. Wiring flange; 51. First wiring port; 52. Second wiring port; 53. Reinforcing rib; 54. Outer edge; 6. Conductive component; 7. Support structure; 8. Power supply box; 9. Box body; 10. Insulating support foot. Detailed Implementation

[0034] The present invention will now be described in further detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present invention and not intended to limit it. Furthermore, it should be noted that, for ease of description, the accompanying drawings show only the parts relevant to the present invention, not the entire structure.

[0035] In the description of this utility model, unless otherwise explicitly specified and limited, the terms "connected," "linked," and "fixed" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances.

[0036] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0037] In the description of this embodiment, the terms "upper," "lower," "right," etc., refer to the orientation or positional relationship shown in the accompanying drawings. They are used only for ease of description and simplification of operation, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model. In addition, the terms "first" and "second" are only used for distinction in description and have no special meaning.

[0038] Example 1

[0039] See Figs. 1 to 3 This embodiment provides a chamber structure capable of introducing high-voltage electricity into the chamber body while preventing high-voltage breakdown. Specifically, the chamber structure includes a cuboid structure formed by six wall panels, which is the chamber body 1. A circular opening is provided on the bottom wall panel of the chamber body 1. Furthermore, it includes an insulating platform, which is positioned at the circular opening on the bottom wall panel of the chamber body 1 and completely covers the opening. The insulating platform and the chamber body 1 are sealed together, forming a complete integrated space. When a vacuum pump is connected and a suction operation is performed, this integrated space can achieve a vacuum state.

[0040] In this embodiment, the insulating platform mainly consists of an insulating cylinder 3 and a first connector and a second connector respectively disposed at both ends of the insulating cylinder 3. The insulating cylinder 3 is made of ceramic, which has excellent insulation properties and can effectively prevent current conduction, providing a crucial foundation for preventing high-voltage breakdown. The first connector and the second connector are made of stainless steel, which has good mechanical strength and corrosion resistance, ensuring the stability and reliability of the structure in complex working environments.

[0041] The first and second connectors are joined at both ends of the ceramic insulating cylinder 3 by welding. Specifically, the first connector includes a mounting flange 4, on which a groove for accommodating a sealing ring is pre-set, and the sealing ring is disposed within the groove. Through the synergistic action of the mounting flange 4 and the sealing ring, the insulating platform can be fixedly and securely connected to the periphery of the circular opening on the bottom wall plate of the chamber body 1 in a sealed manner, ensuring a tight connection, preventing gas leakage, and providing assurance for chamber vacuuming.

[0042] The second connector is configured as a wiring flange 5, located on the end face of the insulating cylinder 3, which effectively seals the end face of the insulating cylinder 3. Wiring pre-drilled holes are provided on the wiring flange 5, specifically including a first wiring port 51 and a second wiring port 52. The presence of these wiring ports allows the insulating platform to be easily connected to external conductive components 6, thereby enabling power transmission or signal interaction. This provides the necessary connection methods and interface support for the entire chamber structure in terms of high-voltage power introduction and the realization of related electrical functions.

[0043] Ion source 2 has a specific connection method in the entire chamber structure system. It is firmly mounted on the second connector of the insulating platform. Through this layout, ion source 2 can maintain a certain spatial distance from the wall panel of chamber body 1, thereby achieving effective electrical isolation and avoiding the risk of high voltage breakdown that may be caused by contact with the wall panel.

[0044] In terms of electrical connection, the electrical connection terminal of the ion source 2 and the second connector of the insulating platform establish a reliable electrical connection link. Specifically, in this embodiment, the electrical connection terminal of the ion source 2 is connected to the first terminal 51 of the second connector via a fixed connection. To ensure the sealing and stability of the connection, a seal is provided between the electrical connection terminal of the ion source 2 and the first terminal 51. This seal effectively seals any gaps between them, preventing gas leakage at the interface, which is crucial for maintaining the vacuum environment inside the chamber.

[0045] Similarly, other connection ports, such as the second connection port 52, are also equipped with special seals for sealing gaps. Once the entire installation is complete, these seals ensure a good seal at all interfaces. This sealing performance provides a solid foundation for subsequent vacuuming of the chamber, ensuring that the chamber can smoothly reach and maintain the required vacuum level, and guaranteeing the stable and efficient operation of the entire system.

[0046] In this embodiment, the power supply box 8 is positioned below the insulating platform. The power supply box 8 integrates multiple power supplies, which, working together, can output a total voltage of 60 kV. The distance between the first and second connectors of the insulating platform is no less than 60 mm to ensure that the high voltage does not penetrate the chamber wall. The power generated by the power supply box 8 is stably transmitted through the conductive element 6 and connected to the second connector of the insulating platform, thereby providing the necessary power supply to drive the connected ion source 2. To ensure the electrical safety of the power supply box 8 during operation and effective insulation isolation from the ground, the power supply box 8 is firmly supported on the ground by insulating feet 10. This design effectively avoids safety accidents that may be caused by leakage from the power supply box, ensuring the safety and reliability of the entire equipment system.

[0047] In a more optimized implementation, the power supply box 8 is further configured inside a specific enclosure 9. Meanwhile, the chamber body 1 is reasonably supported on the upper surface of the enclosure 9. This layout not only contributes to the compactness and stability of the overall equipment structure, but also facilitates the installation, maintenance, and flexible deployment of the equipment in different application scenarios.

[0048] Considering that the ion source 2 is mounted on the second connector of the insulating platform, and that the ion source 2 itself has a certain weight, a reinforcing rib 53 is provided on the second connector to ensure that it maintains sufficient rigidity and stability when bearing the weight of the ion source 2 and other possible mechanical stresses. The design of the reinforcing rib 53 can effectively enhance the mechanical strength of the second connector, preventing it from deforming or being damaged during long-term operation, thereby ensuring the reliability of the connection between the ion source 2 and the insulating platform.

[0049] Furthermore, to provide more sufficient and reliable support for the ion source 2, a support structure 7 is provided between the power supply box 8 and the insulating platform. Specifically, the second connector has an outer edge 54, and the support structure 7 is connected to this outer edge 54. Among many feasible structural designs, the support structure 7 is preferably a cylindrical structure, which can effectively enclose the conductive component 6 within it. This enclosed design not only provides good protection for the conductive component 6, preventing it from being affected by external mechanical impacts or environmental factors, but also further improves the safety of the entire power transmission path and equipment system, reducing potential safety hazards such as electrical short circuits and leakage caused by exposed conductive components, thus providing comprehensive protection for the stable operation of the ion source 2 and the safe operation of the entire chamber structure.

[0050] Obviously, the above embodiments of this utility model are merely examples for clearly illustrating the present utility model, and are not intended to limit the implementation of the present utility model. Those skilled in the art can make various obvious changes, readjustments, and substitutions without departing from the protection scope of this utility model. It is neither necessary nor possible to exhaustively describe all embodiments here. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this utility model should be included within the protection scope of the claims of this utility model.

Claims

1. A chamber structure, characterized in that, include: A chamber body, the chamber body being formed by a plurality of wall panels, one of which is a first wall panel, the first wall panel having an opening; An insulating platform has an insulating cylinder and a first connector and a second connector disposed at both ends of the insulating cylinder. The first connector is sealed to the periphery of the opening of the first wall panel, so that the opening communicates with the interior of the insulating platform. The second connector seals the end face of the insulating cylinder; The second connector has a pre-set through hole, which serves as a channel for external conductive components to access the insulating platform; An ion source is located in the chamber body, and the ion source has an electrical connection terminal, which is connected to the second connector; The ion source is not in contact with the first wall panel.

2. The chamber structure according to claim 1, characterized in that: The first wall panel is the bottom plate of the chamber body; The ion source is mounted on the second connector via an electrical connection terminal, so that the second connector bears the load.

3. The chamber structure according to claim 1, characterized in that: The first connector has a mounting flange at the non-connecting end with the insulating cylinder; The insulating platform is sealed to the first wall panel via the mounting flange.

4. The chamber structure according to claim 1, characterized in that: The second connector is a stainless steel wiring flange; The second connector is provided with reinforcing ribs.

5. The chamber structure according to claim 1, characterized in that: The vertical distance between the first connector and the second connector is not less than S; Where S is the maximum voltage through the second connector in kilovolts, and each kilovolt corresponds to 1 mm.

6. The chamber structure according to claim 1, characterized in that: The insulating cylinder is made of ceramic.

7. The chamber structure according to claim 1, characterized in that: The insulating cylinder has a pleated structure on its wall.

8. The chamber structure according to claim 1, characterized in that: The first connector and the second connector are welded to both ends of the insulating cylinder.

9. The chamber structure according to claim 2, characterized in that: It also includes a power supply box, which contains a power supply unit; The power supply box is positioned below the insulating platform; A conductive element connects the power supply group to the ion source via the insulating platform. A support component is disposed between the power supply box and the insulating platform.

10. The chamber structure according to claim 9, characterized in that: The support member is cylindrical and encloses the conductive member.