Plasma processing apparatus
By using an energized coil to induction heat the lining in a plasma processing device, the problems of poor lining temperature uniformity and contamination of heat-conducting materials were solved, achieving uniform heating and a pollution-free effect for the lining.
Patent Information
- Application Number
- CN202423135658.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-18
- Publication Date
- 2025-12-12
- Estimated Expiration
- 2034-12-18
AI Technical Summary
In existing plasma processing equipment, the poor temperature uniformity of the lining leads to increased polymer deposition, and the heat-conducting material is prone to contaminating the reaction chamber.
An annular liner is installed on the inner side wall of the reaction chamber, and an energized coil is placed between the liner and the side wall to induce heating of the liner under an alternating magnetic field, thus avoiding the use of heat-conducting materials.
It improves the temperature uniformity of the liner, reduces the risk of polymer deposition, avoids contamination of the reaction chamber by heat-conducting materials, and maintains the consistency of the sidewall temperature.
Smart Images
Figure CN223665407U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to the field of semiconductor processing especially relates to a plasma processing equipment. BACKGROUND
[0002] In the reaction cavity of the plasma processing equipment, the inner side of the cavity side wall is provided with an inner liner, which is used for protecting the cavity side wall and preventing the reaction polymer in the plasma processing process from depositing on the cavity side wall. The temperature of the inner liner also affects the polymer deposition, and low temperature can cause more polymer deposition, which not only affects the process rate in the reaction cavity, but also increases the cleaning workload of the reaction cavity.
[0003] Heating the inner liner can solve this problem. The current heating method of the inner liner is to set a heater between the inner liner and the cavity side wall to improve the temperature of the inner liner through heat conduction. However, this method has the following defects:
[0004] The heater is connected to the external power supply through wires, and generates heat when powered on. Therefore, there is heat loss at the electrical connection between the heater and the power supply, and the temperature at this point is lower than that in other areas, thereby increasing the possibility of polymer deposition. In addition, the temperature gradient generated by the heating of the heater will affect the temperature uniformity of the inner liner;
[0005] In order to improve the heat conduction between the heater and the inner liner, a material that increases heat conduction, such as graphite paper or heat-conducting silicone, is set between the heater and the inner liner. This material is set in the reaction cavity and is extremely easy to pollute the environment in the reaction cavity;
[0006] The heater is set between the inner liner and the cavity side wall, which inevitably heats the cavity side wall when heating the inner liner, thereby affecting the temperature uniformity of the cavity side wall and further affecting the process effect in the reaction cavity. SUMMARY
[0007] The utility model aims at providing a plasma processing equipment to improve the temperature uniformity of the inner liner and reduce the pollution of the heat conduction material to the reaction cavity.
[0008] To achieve the above-mentioned purpose, the utility model provides a plasma processing equipment, which comprises:
[0009] A vacuum reaction cavity, the vacuum reaction cavity has a side wall;
[0010] An inner liner made of conductive material, the inner liner is annular with a vertical face and is set on the inner side of the side wall;
[0011] An energized coil between the vertical face of the inner liner and the side wall;
[0012] The energized coil surrounds the vertical surface of the inner liner, and a gap is formed between the energized coil and the vertical surface of the inner liner.
[0013] Optionally, the vacuum reaction chamber further comprises a top wall above the side wall; the inner liner further comprises a horizontal surface connected to the top end of the vertical surface, extending out of the vacuum reaction chamber, and located between the side wall and the top wall.
[0014] Optionally, the bottom end of the energized coil is not lower than the bottom end of the inner liner.
[0015] Optionally, a ring-shaped magnetic shielding member is arranged between the bottom end of the inner liner and the side wall.
[0016] Optionally, the energized coil comprises at least two turns and is arranged longitudinally, and the distance between any two adjacent turns of the energized coil is greater than the creepage distance.
[0017] Optionally, the vacuum reaction chamber further comprises a transmission port between any two adjacent turns of the energized coil.
[0018] Optionally, the vacuum reaction chamber further comprises a temperature control module, which comprises a temperature sensor, a controller and a power switch; the temperature sensor is arranged on the inner liner and used for monitoring the temperature of the inner liner; the power switch is connected to the energized coil and used for controlling the on-off of the current of the energized coil; the controller is connected to the temperature sensor and receives the temperature measurement result of the temperature sensor; the controller is further connected to the power switch and used for controlling the opening or closing of the power switch.
[0019] Optionally, a support for placing the energized coil is arranged between the side wall and the vertical surface of the inner liner.
[0020] Optionally, a plurality of blind holes are formed in the inner wall surface of the side wall, and the support is fixed to the side wall through the blind holes.
[0021] Optionally, an insulating coating is coated on the inner wall surface of the side wall and the outer wall surface of the inner liner.
[0022] Optionally, the energized coil is connected to an external power source through the horizontal surface of the inner liner.
[0023] Compared with the prior art, the plasma processing device has at least the following advantages and beneficial effects:
[0024] The utility model discloses a plasma processing equipment, through setting up the inside lining of the inside of the lateral wall of the reaction cavity, and setting up the energized coil between the vertical surface of the inside lining and the lateral wall, because the inside lining is conductive material, therefore the inside lining can produce eddy current and heat under the alternating magnetic field of the energized coil, the scheme passes through the induction heating and makes the inside lining temperature rise, therefore the inside lining does not exist low temperature area, improves the temperature uniformity of the inside lining, because the scheme adopts the energized coil and makes the inside lining induction heating, therefore does not need to set up the heat conduction enhancement material additionally, avoids the pollution of the heat conduction enhancement material to the reaction cavity, the scheme only heats the inside lining, and the energized coil does not heat, thereby avoiding the temperature of the lateral wall from being affected by the energized coil and heating.
[0025] The utility model discloses a technical scheme that sets up the transmission sheet mouth between the gap of the energized coil, compared with the prior art that sets up the transmission sheet mouth on the heater and thus influences the temperature uniformity of the inside lining, the inside lining heats under the magnetic field of the energized coil in the scheme, and the setting up transmission sheet mouth does not influence the magnetic field of the energized coil, thereby improving the temperature uniformity of the inside lining and avoiding that the polymer deposits in the low temperature area of the inside lining. BRIEF DESCRIPTION OF DRAWINGS
[0026] Fig. 1 It is a reaction cavity schematic view of the plasma processing equipment of the utility model embodiment;
[0027] Fig. 2 It is the principle diagram of the inside lining heating in the utility model embodiment. DETAILED DESCRIPTION
[0028] The following will combine the technical scheme of the utility model embodiment Figs. 1-2 , the construction features, the purpose and the effect reached of the technical scheme of the utility model embodiment are explained in detail.
[0029] It should be noted that the drawings are very simplified and all use non-precise proportions, only to facilitate and clarify the purpose of assisting the explanation of the utility model embodiment, and are not used to limit the conditions of the utility model implementation, so they do not have substantial technical significance, any modification of structure, change of proportion relationship or size adjustment, as long as it does not affect the effect and purpose of the utility model can be achieved, it should still fall within the scope of the technical content disclosed by the utility model.
[0030] It should be noted that in the utility model, the term "include", "contain" or any other variant thereof is intended to cover non-exclusive inclusion, so that the process, method, article or equipment including a series of elements not only includes the explicitly listed elements, but also includes other elements not explicitly listed, or includes the elements inherent in such process, method, article or equipment.
[0031] The current plasma processing equipment avoids polymer deposition on the side wall by arranging an inner liner on the inner side of the side wall of the reaction cavity, and reduces the risk of polymer deposition on the inner liner by arranging a heater between the side wall and the inner liner, the heater generates heat by power supply and heats the inner liner by heat conduction effect. However, the temperature at the electrical connection between the heater and the power supply wire is lower than that of other areas of the heater, thereby causing a low temperature area on the inner liner, reducing the temperature uniformity of the inner liner and increasing the risk of polymer deposition. In order to improve the heat conduction effect between the inner liner and the heater, a heat conduction enhancing material such as graphite paper or heat conductive silica gel is usually arranged between the two, which is arranged in the reaction cavity and is easy to pollute the environment in the reaction cavity.
[0032] To solve the above problems, the utility model provides a kind of plasma processing equipment, in the vacuum reaction cavity of this plasma processing equipment, annular inner liner is provided, by being arranged between the inner liner and the side wall of reaction cavity power coil, make inner liner in the magnetic field of power coil induction heating, to play the effect of heating inner liner, this inductive heating mode heating uniformity is good, avoid the low temperature area of inner liner, and need not introduce the material of easy pollution reaction cavity.
[0033] The technical solutions of the utility model will be described in detail below in combination with the drawings and examples.
[0034] As Fig. 1 As shown in the figure, it is the vacuum reaction cavity 100 of a kind to be used for the utility model embodiment plasma processing equipment, the vacuum reaction cavity 100 includes the side wall 150 of substantially cylindrical and the top wall 110 located above the side wall 150. Vacuum reaction cavity 100 is also provided with oppositely arranged gas shower head 120 and pedestal 140, gas shower head 120 is located above in the vacuum reaction cavity 100, for providing process gas to the vacuum reaction cavity 100, pedestal 140 is used to carry wafer. Make radio frequency power supply to be applied to pedestal 140 or gas shower head 120, thereby generating radio frequency electric field between pedestal 140 and gas shower head 120, the process gas is dissociated into plasma, and wafer is processed.
[0035] To prevent the reaction polymer from depositing on the side wall 150 during the plasma processing, an annular inner liner 160 is arranged on the inner side of the side wall 150, which is made of an electrically conductive material, such as metal. The inner liner 160 has a horizontal surface 161 connected to a vertical surface 162, and the annular vertical surface 162 is arranged on the inner side of the side wall 150, and the annular horizontal surface 161 is connected to the top end of the vertical surface 162 and extends outwardly from the vacuum reaction chamber 100. The horizontal surface 161 is arranged between the side wall 150 and the top wall 110, so as to fix the position of the inner liner 160. In addition, a seal is arranged at the joint between the top wall 110, the horizontal surface 161 and the side wall 150, so as to maintain the vacuum environment in the vacuum reaction chamber 100.
[0036] The annular vertical surface 162 of the inner liner 160 is arranged with an electric coil 133, which is arranged around the vertical surface 162 and has a gap between the vertical surface 162 and the electric coil 133. As shown in Fig. 2 , the current in the electric coil 133 is alternating current, so as to generate an alternating magnetic field 135 around the electric coil 133, and the inner liner 160 is arranged in the alternating magnetic field 135, so that eddy current 136 is generated in the inner liner 160, and the eddy current 136 flows in the inner liner 160 and generates Joule heat due to the resistance of the inner liner 160, so as to heat the inner liner 160 and achieve induction heating. In this process, the inner liner 160 is heated under the alternating magnetic field 135 of the electric coil 133, and the heating is uniform, and compared with the heating of the electric heater, the heating mode of the present embodiment can avoid the heating loss at the electric connection, so that the temperature of the inner liner 160 is more uniform and is not easy to produce a low temperature area, and the area prone to polymer deposition is eliminated; in addition, the inner liner 160 is heated by induction under the action of the electric coil 133, and the inner liner 160 does not contact the electric coil 133, and there is no need for heat conduction between the two, so that the problem of pollution of the reaction chamber caused by the additional arrangement of the heat conduction material is solved. In addition, the electric coil 133 hardly generates heat, so that the temperature of the side wall 150 of the reaction chamber 100 will not be affected by the electric coil 133 and will not be increased, and compared with the prior art, the present scheme reduces the influence of the non-uniform temperature of the side wall 150 on the wafer processing effect.
[0037] The electric coil 133 is made of a low-resistance material, such as copper or aluminum. The inner liner 160 is made of a material with small resistance, such as metal material, and the smaller the resistance of the inner liner 160, the stronger the eddy current generated in the inner liner 160, and the better the heating effect of the inner liner 160.
[0038] Continuing as Fig. 1As shown, the current-carrying coil 133 is connected with the power supply 132 outside the vacuum reaction chamber 100 through the wire 131, and the power supply 132 provides alternating current. The wire 131 passes through the horizontal plane 161 and communicates with the current-carrying coil 133 inside the vacuum reaction chamber 100, and the wire channel is arranged in the horizontal plane 161, so that the side wall 150 is not punched, thereby avoiding the influence on the radio frequency electric field distribution inside the vacuum reaction chamber 100. At the connection between the wire 131 and the current-carrying coil 133, the sealing treatment is carried out to maintain the sealing of the vacuum reaction chamber 100.
[0039] In order to obtain better heating effect, at least two turns of longitudinally arranged current-carrying coils 133 are arranged, Fig. 1 Four turns of current-carrying coils 133 are arranged in the inner wall 160. In order to prevent the breakdown phenomenon between the adjacent two turns of current-carrying coils 133, causing arc discharge and affecting the radio frequency electric field inside the reaction chamber 100, the distance between any two adjacent turns of current-carrying coils is greater than the creepage distance of the current-carrying coil 133.
[0040] The vacuum reaction chamber 100 is also provided with a wafer conveying port 170 for conveying wafers, and the wafer conveying port 170 passes through the side wall 150, the current-carrying coil 133 and the inner liner 160. At the current-carrying coil 133, the wafer conveying port 170 is located between any two adjacent turns of current-carrying coils 133, and since the current-carrying coils 133 have a gap between them and the gap between the current-carrying coils 133 does not affect the heating effect of the inner liner 160, the gap is used as the wafer conveying port 170, without changing the shape of the current-carrying coil 133, and without affecting the temperature uniformity of the inner liner 160. In the existing heater surrounding the inner liner, the inner liner is heated by heat conduction between the heater and the inner liner, and if a wafer conveying port is arranged on the heater to convey wafers, a long opening needs to be provided on the heater, which will inevitably affect the heat conduction effect of the heater on the inner liner, and the temperature uniformity of the inner liner will be significantly deteriorated. Therefore, in the present embodiment, the current-carrying coil 133 is arranged to inductively heat the inner liner 160, and the gap between the current-carrying coils 133 is used as the wafer conveying port 170, which is simple to process and improves the temperature uniformity of the inner liner 160.
[0041] The depth of the current-carrying coil 133 is not greater than the inner liner 160, that is, the bottom end of the lowermost current-carrying coil 133 is not lower than the bottom end of the inner liner 160, so as to avoid the magnetic field generated by the current-carrying coil 133 from entering the vacuum reaction chamber 100 and affecting the magnetic field distribution inside the chamber, thereby affecting the uniformity of the plasma distribution.
[0042] Further, a ring-shaped magnetic shield 137 is arranged between the bottom end of the inner liner 160 and the side wall 150, so as to prevent the magnetic field of the energized coil 133 from escaping from below the energized coil 133 into the reaction region in the vacuum reaction chamber 100. The magnetic field inside the energized coil 133 has been consumed by the inner liner 160, and thus there is no need to additionally arrange a magnetic shield on the inner side of the inner liner 160.
[0043] The vacuum reaction chamber 100 of the embodiment further comprises a temperature control module for controlling the temperature of the inner liner 160 at a set temperature, which comprises a temperature sensor, a controller and a power switch. The temperature sensor is arranged on the inner liner 160 for measuring the temperature of the inner liner 160; the power switch is connected with the energized coil 133 and arranged between the energized coil 133 and the power supply 132, and can control the on-off of the current in the energized coil 133; the controller is in communication connection with the temperature sensor and receives the temperature measurement result of the temperature sensor, and the controller is further connected with the power switch for controlling the opening or closing of the power switch. When the temperature sensor measures that the temperature of the inner liner 160 is lower than a first set temperature, the controller controls the power switch to be closed, so that the energized coil 133 is energized to generate a magnetic field, thereby heating the inner liner 160; when the temperature sensor measures that the temperature of the inner liner 160 is higher than a second set temperature, the controller controls the power switch to be opened, so that the current of the energized coil 133 is interrupted, thereby stopping heating the inner liner 160.
[0044] The energized coil 133 is fixed between the inner liner 160 and the side wall 150 by the bracket 134. Specifically, a plurality of blind holes are arranged on the inner wall surface of the side wall 150, and the helical bracket 134 is fixed on the side wall 150 through the blind holes, for example, a plurality of screws are passed through the through holes on the bracket 134 and then screwed into the blind holes. In other embodiments, the bracket 134 can also be a plurality of ring-shaped brackets. The bracket 134 is made of insulating material.
[0045] The inner wall surface of the side wall 150 and the outer wall surface of the inner liner 160 are coated with an insulating coating. Since the energized coil 133 is powered by alternating current, and the inner liner 160 and the side wall 150 are both made of conductive material, the non-conductive insulating coating arranged on the wall surfaces of the two can prevent arcing between the side wall 150 and the inner liner 160.
[0046] In summary, in the plasma processing equipment provided in the embodiment, the inner liner 160 is arranged in the alternating magnetic field of the energized coil 133, the inner liner 160 is heated by induction heating, the temperature uniformity of the induction heating is good, the temperature rising speed is fast, and the heat conduction is not enhanced by arranging the heat conduction material, so that the material which is easy to contaminate the reaction cavity is avoided. The coil has a gap between the coils, the transmission port 170 is arranged by using the gap, the heating effect on the inner liner 160 is not affected, and the temperature uniformity of the inner liner 160 is ensured. The energized coil 133 does not heat itself when the inner liner 160 is heated by induction, so the temperature of the side wall 150 is not affected by the energized coil 133, the temperature consistency of the side wall 150 is improved, and the influence on the wafer processing effect in the reaction cavity 100 is avoided.
[0047] Although the content of the present application has been described in detail by the above preferred embodiments, it should be recognized that the above description should not be considered as a limitation to the present application. After reading the above content, various modifications and substitutions of the present application will be apparent to those skilled in the art. Therefore, the protection scope of the present application should be defined by the appended claims.
Claims
1. A plasma processing apparatus, characterized by, The vacuum reaction chamber comprises: a vacuum reaction chamber with a side wall; an inner lining made of conductive material, which is annular with vertical faces and is arranged on the inner side of the side wall; an energized coil between the vertical faces of the inner lining and the side wall; wherein the energized coil surrounds the vertical faces of the inner lining and has a gap between the energized coil and the vertical faces of the inner lining.
2. The plasma processing apparatus of claim 1, wherein, The vacuum reaction chamber further comprises a top wall above the side wall, and the inner lining further comprises horizontal faces connected to the top ends of the vertical faces, extending out of the vacuum reaction chamber and between the side wall and the top wall.
3. The plasma processing apparatus of claim 2, wherein, The bottom end of the energized coil is not lower than the bottom end of the inner lining.
4. The plasma processing apparatus of claim 3, wherein, A magnetic shielding ring is arranged between the bottom end of the inner lining and the side wall.
5. The plasma processing apparatus of claim 1, wherein, The energized coil has at least two turns and is arranged longitudinally, and the distance between any two adjacent turns is greater than the creepage distance.
6. The plasma processing apparatus of claim 5, wherein, The vacuum reaction chamber further comprises a transmission port between any two adjacent turns of the energized coil.
7. The plasma processing apparatus of claim 1, wherein, The vacuum reaction chamber further comprises a temperature control module, which comprises a temperature sensor, a controller and a power switch; the temperature sensor is arranged on the inner lining to monitor the temperature of the inner lining; the power switch is connected to the energized coil to control the on-off of the current of the energized coil; the controller is connected to the temperature sensor to receive the temperature measurement result of the temperature sensor, and is further connected to the power switch to control the opening or closing of the power switch.
8. The plasma processing apparatus of claim 1, wherein, A support for placing the energized coil is arranged between the vertical faces of the inner lining and the side wall.
9. The plasma processing apparatus of claim 8, wherein, A plurality of blind holes are arranged on the inner wall of the side wall, and the support is fixed to the side wall through the blind holes.
10. The plasma processing apparatus of claim 1, wherein, An insulating coating is coated on the inner wall of the side wall and the outer wall of the inner lining.
11. The plasma processing apparatus of claim 2, wherein, The energized coil is connected to an external power source through the horizontal faces of the inner lining.