Wafer drying device

Abstract

The utility model provides a wafer drying device. The wafer drying device comprises a bearing platform used for bearing a wafer; the metal heating element is positioned in the bearing platform; the magnet platform and the bearing platform are arranged at intervals in the height direction, a plurality of permanent magnets are arranged in the magnet platform, and the magnetic poles of every two adjacent permanent magnets are opposite; and the first rotating shaft is used for driving the bearing platform or the magnet platform to rotate. According to the utility model, the first rotating shaft drives the bearing platform or the magnet platform to rotate, so that the metal heating element generates heat energy, and the heat energy is transmitted to the wafer on the bearing platform, thereby accelerating the drying of the protective liquid on the wafer, improving the productivity, and avoiding the abnormal residual of the protective liquid.

Description

TECHNICAL FIELD

[0001] The utility model relates to wafer preparation technical field, especially a wafer drying device. BACKGROUND

[0002] Before the laser treatment of wafer, need on wafer coating a layer of protective liquid and protect, after the protective liquid dry knot and carry out laser treatment.But part wafer product protective liquid needs coating dry time is longer, under the condition of uneven protective liquid coating possibly appears liquid residue.

[0003] Therefore, it is necessary to provide a wafer drying device to solve the above technical problems. SUMMARY

[0004] In order to realize the above-mentioned purpose, the utility model provides a wafer drying device, it includes the bearing platform for bearing wafer, the metal heating element in the bearing platform, the magnet platform, the magnet platform with the bearing platform interval setting along the height direction, the magnet platform is provided with a plurality of permanent magnet, the magnetic pole of adjacent two permanent magnet is opposite, the first rotation axis for driving the bearing platform or the magnet platform rotation.

[0005] As a further improvement of the utility model, the bearing platform is circular, the metal heating element is circular, and a plurality of metal heating elements are arranged along the radial direction of the bearing platform.

[0006] As a further improvement of the utility model, the spacing of adjacent two metal heating elements is the same, or the spacing of adjacent two metal heating elements gradually decreases from the center of the bearing platform to the outside.

[0007] As a further improvement of the utility model, the spacing of the metal heating element and the magnet platform is different.

[0008] As a further improvement of the utility model, the number of magnetic induction lines passing through any metal heating element is the same, or the number of magnetic induction lines passing through the metal heating element gradually increases from the center of the bearing platform to the outside.

[0009] As a further improvement of the utility model, the magnet platform and the permanent magnet are circular, a plurality of permanent magnets are arranged along the circumference of the magnet platform at equal intervals, and the centers of all permanent magnets are concentric.

[0010] As a further improvement of the utility model, the first rotation axis is used to drive the bearing platform to rotate, and the spacing between the center of the magnet platform and the center of the permanent magnet is greater than half of the radius of the magnet platform.

[0011] As a further improvement of the utility model, the distance between the bearing platform and the magnet platform is equal to the radius of the permanent magnet.

[0012] As a further improvement of the utility model, the first rotating shaft is used to drive the rotation of the bearing platform, the magnet platform is provided with a through hole in the center for the first rotating shaft to pass through, and the wafer drying device further comprises a lifting member used to drive the magnet platform to move along the axial direction of the first rotating shaft.

[0013] As a further improvement of the utility model, the second rotating shaft is further arranged to drive the rotation of the magnet platform, and the first rotating shaft is sleeved in the second rotating shaft.

[0014] The utility model discloses the first rotating shaft drives the rotation of the bearing platform or the magnet platform, makes the metal heating element produce heat energy, and transmits the heat to the wafer on the bearing platform, thereby speeding up the dry setting of the protective liquid on the wafer, improving the production capacity, and avoiding the abnormal residual of the protective liquid. BRIEF DESCRIPTION OF DRAWINGS

[0015] The drawings described herein are used to provide further understanding of the utility model and constitute a part of the utility model, and the illustrative embodiment and the description thereof are used to explain the utility model and do not constitute improper limitation on the utility model. In the drawings:

[0016] Figure 1 It is the whole structure schematic diagram of one embodiment of the wafer drying device of the utility model;

[0017] Figure 2 It is the whole structure schematic diagram of one embodiment of the wafer drying device of the utility model; Figure 1 It is the section view of the wafer drying device shown in the drawing;

[0018] Figure 3 It is the whole structure schematic diagram of another embodiment of the wafer drying device of the utility model;

[0019] Figure 4 It is the arrangement schematic diagram of the metal heating element along the radial direction of the bearing platform;

[0020] Figure 5 It is another arrangement schematic diagram of the metal heating element along the radial direction of the bearing platform;

[0021] Figure 6 It is another arrangement schematic diagram of the metal heating element along the radial direction of the bearing platform;

[0022] Figure 7 It is the arrangement schematic diagram of the permanent magnet in the magnet platform;

[0023] Figure 8 It is another arrangement schematic diagram of the permanent magnet in the magnet platform;

[0024] Figure 9 This is a schematic diagram of a row of metal heating elements arranged along the height direction.

[0025] Figure 10 This is a schematic diagram of another arrangement of metal heating elements along the height direction;

[0026] Figure 11 This is a schematic diagram of another arrangement of metal heating elements along the height direction. Detailed Implementation

[0027] To make the objectives, technical solutions, and advantages of this utility model clearer, the technical solutions of this utility model will be clearly and completely described below in conjunction with specific embodiments and corresponding drawings. Obviously, the described embodiments are only a part of the embodiments of this utility model, and not all of them. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this utility model.

[0028] The embodiments of this utility model are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this utility model, and should not be construed as limiting this utility model.

[0029] In the description of this utility model, it should be understood that the terms "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model.

[0030] In the description of this utility model, unless otherwise specified and limited, it should be noted that the terms "installation", "connection" and "linking" should be interpreted broadly. For example, they can refer to mechanical or electrical connections, or internal connections between two components. They can be direct connections or indirect connections through an intermediate medium. Those skilled in the art can understand the specific meaning of the above terms according to the specific circumstances.

[0031] like Figures 1 to 11 As shown, the wafer drying apparatus provided by this utility model includes a support platform 100, a metal heating element 200, a magnet platform 300, and a first rotating shaft 400.

[0032] The bearing platform 100 is used to bear the wafer A coated with the protective liquid. The metal heating element 200 is located in the bearing platform 100. The magnet platform 300 is spaced apart from the bearing platform 100 in the height direction, and the magnet platform 300 generates a magnetic field. The bearing platform 100 or the magnet platform 300 is driven to rotate by the first rotating shaft 400, so that the metal heating element 200 generates heat energy and transmits heat to the wafer A on the bearing platform 100, thereby accelerating the drying of the protective liquid on the wafer A, improving the production capacity, and avoiding abnormal residual of the protective liquid.

[0033] Specifically, the bearing platform 100 is circular to match the shape of the wafer A. The bearing platform 100 is a vacuum platform, and the top of the bearing platform 100 is provided with a vacuum suction port, so as to suction and fix the wafer A placed on the bearing platform 100. The bearing platform 100 also has good thermal conductivity, so as to transmit the heat energy generated by the metal heating element 200 to the wafer A.

[0034] The outer edge of the bearing platform 100 is provided with a baffle 101. It can be understood that if the bearing platform 100 is driven to rotate by the first rotating shaft 400, the protective liquid on the wafer A may be thrown away under the action of centrifugal force. By providing the baffle 101 at the outer edge of the bearing platform 100, the flow of the protective liquid to the bottom of the bearing platform 100 can be effectively prevented, so as to avoid the pollution of the bearing platform 100 by the protective liquid.

[0035] It should be particularly pointed out that when the magnet platform 300 is located below the bearing platform 100, the baffle 101 is vertically arranged and extends from the bearing platform 100 to the magnet platform 300, and the height of the baffle 101 is greater than the distance between the bearing platform 100 and the magnet platform 300. In this way, the baffle 101 can also effectively prevent the protective liquid from flowing onto the magnet platform 300, so as to avoid the pollution of the magnet platform 300 by the protective liquid.

[0036] The bearing platform 100 is also provided with a temperature sensor for monitoring the temperature of the bearing platform 100. The speed of the first rotating shaft 400 can be adjusted according to the temperature of the bearing platform 100 to keep the temperature of the bearing platform 100 within a preset range. The faster / slower the speed of the first rotating shaft 400, the greater / smaller the heat energy generated by the metal heating element 200.

[0037] The metal heating element 200 is annular to match the shape of the bearing platform 100 and the wafer A. By setting the metal heating element 200 as annular, on the one hand, the heat energy generation of the metal heating element 200 can be increased, and on the other hand, the contact area of the metal heating element 200 and the bearing platform 100 can be increased, while the temperature uniformity of the annular area corresponding to the bearing platform 100 and the metal heating element 200 can be ensured.

[0038] A plurality of metal heating elements 200 are arranged at intervals along the radial direction of the bearing platform 100. The plurality of metal heating elements 200 are concentrically arranged and coincide with the center of the bearing platform 100. By arranging a plurality of metal heating elements 200 at intervals along the radial direction of the bearing platform 100, the entire wafer A can be heated, thereby accelerating the drying of the protective liquid on the wafer A, improving productivity, and avoiding abnormal residual of the protective liquid due to low local temperature of the wafer A.

[0039] In the embodiment, the cross-sectional diameter of the metal heating element 200 is 2 cm. Different numbers of metal heating elements 200 are adapted for wafers of different sizes. For example, for an 8-inch wafer product, the number of metal heating elements 200 is 3; for a 12-inch wafer product, the number of metal heating elements 200 is 5. The metal heating element 200 is made of copper, which is inexpensive and good at producing heat. Of course, in other embodiments, the metal heating element 200 can also be made of other metals.

[0040] The temperature sensor can be arranged one-to-one corresponding to a plurality of metal heating elements 200, that is, a plurality of temperature sensors are arranged to monitor the temperature at different positions of the bearing platform 100 along the radial direction, so as to maintain the temperature uniformity of the bearing platform 100 or increase / decrease the local temperature of the bearing platform 100.

[0041] The magnet platform 300 is circular to match the shape of the bearing platform 100. A plurality of permanent magnets 301 are arranged in the magnet platform 300, and the magnetic poles of adjacent two permanent magnets 301 are opposite. The number of permanent magnets 301 is even, and a magnetic field is formed by the permanent magnets 301 in the magnet platform 300.

[0042] When the first rotating shaft 400 drives the bearing platform 100 or the magnet platform 300 to rotate, the metal heating element 200 in the bearing platform 100 rotates relative to the permanent magnet 301 in the magnet platform 300, the metal heating element 200 cuts the magnetic force lines in the magnetic field to generate eddy current, and the metal heating element 200 generates heat energy under the action of the eddy current. The heat generated by the metal heating element 200 is transmitted to the wafer A through the bearing platform 100, thereby accelerating the dryness of the protective liquid on the wafer A.

[0043] The permanent magnet 301 is circular, a plurality of permanent magnets 301 are arranged at equal intervals along the circumference of the magnet platform 300, and the centers of all the permanent magnets 301 are concentric.

[0044] The magnetic poles of adjacent two permanent magnets 301 are opposite, the central angles between adjacent two permanent magnets 301 are equal, that is, the permanent magnets 301 are arranged at equal intervals, and the centers of all the permanent magnets 301 are concentric. In this way, the magnetic lines of the magnetic field formed can uniformly pass through the annular metal heating element 200, thereby ensuring the uniformity of the temperature of the metal heating element 200, and further ensuring the uniformity of the temperature in the annular area corresponding to the bearing platform 100 and the metal heating element 200, thereby avoiding the abnormal residue of the protective liquid caused by the low local temperature of the wafer A.

[0045] In the embodiment, the diameter of the permanent magnet 301 is 5 cm, and the height of the permanent magnet 301 is 1.8 cm. Different numbers of permanent magnets 301 are adapted for wafers of different sizes. For example, for an 8-inch wafer product, the number of permanent magnets 301 is 6; for a 12-inch wafer product, the number of permanent magnets 301 is 8.

[0046] The magnet platform 300 is located below the bearing platform 100. The wafer drying device further comprises a lifting member 500 for driving the magnet platform 300 to move along the height direction. The distance between the bearing platform 100 and the magnet platform 300 can be adjusted by the lifting member 500.

[0047] When the wafer A on the bearing platform 100 does not need to be dried, the magnet platform 300 is moved away from the bearing platform 100 by the lifting member 500, that is, the magnet platform 300 is moved downward, so that the metal heating element 200 in the bearing platform 100 is away from the magnetic field formed by the permanent magnet 301. At this time, the bearing platform 100 or the magnet platform 300 rotates, and the metal heating element 200 does not generate heat energy.

[0048] When the wafer A on the carrier platform 100 needs to be dried, the magnet platform 300 is moved towards the carrier platform 100 by the lifting member 500, i.e. the magnet platform 300 is moved upwards, so that the metal heating member 200 in the carrier platform 100 enters the magnetic field formed by the permanent magnet 301. At this time, the carrier platform 100 or the magnet platform 300 rotates, and the metal heating member 200 generates heat energy.

[0049] The distance between the carrier platform 100 and the magnet platform 300 is adjusted by the lifting member 500, so that the metal heating member 200 can be away from or enter the magnetic field formed by the permanent magnet 301, and the number of magnetic field lines passing through the metal heating member 200 can be adjusted, so as to adjust the heat energy generated by the metal heating member 200, and further control the temperature of the carrier platform 100.

[0050] During the movement of the magnet platform 300 towards the carrier platform 100, the number of magnetic field lines passing through the metal heating member 200 gradually increases and then gradually decreases. When the distance between the carrier platform 100 and the magnet platform 300 is equal to the radius of the permanent magnet 301, the number of magnetic field lines passing through the metal heating member 200 is the largest.

[0051] It can be understood that the heat energy generated by the metal heating member 200, and further the temperature of the carrier platform 100, can be controlled by controlling the rotating speed of the first rotating shaft 400 or adjusting the distance between the carrier platform 100 and the magnet platform 300.

[0052] It should be particularly pointed out that for the scheme in which the distance between the carrier platform 100 and the magnet platform 300 is not adjustable, in order to ensure that the number of magnetic field lines passing through the metal heating member 200 is the largest, and thus the heat energy generated by the metal heating member 200 is the largest, the distance between the carrier platform 100 and the magnet platform 300 is equal to the radius of the permanent magnet 301.

[0053] The wafer drying device further comprises a liquid coating member 700 for coating protective liquid onto the wafer A. In the embodiment, the wafer drying device is located in a box, and the liquid coating member 700 is located on the side wall of the box, and the liquid coating member 700 rotates to spray the protective liquid onto the wafer A. The liquid coating member 700 can be a mechanical arm.

[0054] In an embodiment, the first rotating shaft 400 is used to drive the carrier platform 100 to rotate.

[0055] In the embodiment, the top end of the first rotating shaft 400 is connected to the bottom of the bearing platform 100, and the bearing platform 100 can rotate relative to the magnet platform 300 under the driving of the first rotating shaft 400. The magnet platform 300 is not rotatable, and the center of the magnet platform 300 is provided with a through hole 302 for the first rotating shaft 400 to pass through, that is, the first rotating shaft 400 passes through the through hole 302 and is connected to the bearing platform 100. The lifter 500 drives the magnet platform 300 to move along the axial direction of the first rotating shaft 400.

[0056] It can be understood that, under the driving of the first rotating shaft 400, the bearing platform 100 and the wafer A thereon rotate, and under the action of centrifugal force, the thickness of the protective liquid at the outer edge position of the wafer A is greater than that at the center position of the wafer A. Therefore, it is necessary to keep the temperature at the outer edge position of the wafer A greater than that at the center position of the wafer A, so as to improve the dry setting efficiency of the protective liquid and avoid abnormal residual of the protective liquid.

[0057] Referring to Figure 5 In a specific embodiment, the distance between adjacent two metal heating elements 200 gradually decreases from the center of the bearing platform 100 to the outside.

[0058] In the embodiment, three metal heating elements 200 are arranged at intervals along the radial direction of the bearing platform 100, which are a first metal heating element, a second metal heating element and a third metal heating element from inside to outside. The distance between the first metal heating element and the second metal heating element is L1, the distance between the second metal heating element and the third metal heating element is L2, and L1>L2.

[0059] In this way, the metal heating elements 200 located at the outer edge position of the bearing platform 100 are more dense, so that the temperature at the outer edge position of the bearing platform 100 is higher, and thus the protective liquid with different thicknesses on the wafer A can be dried and set at the same time.

[0060] Referring to Figure 7 and Figure 8 In another specific embodiment, the distance between the center of the magnet platform 300 and the center of the permanent magnet 301 is greater than half the radius of the magnet platform 300.

[0061] In this embodiment, the distance between the center of the magnet platform 300 and the center of the permanent magnet 301 is R1, and the radius of the magnet platform 300 is R2, R1>R2 / 2. The permanent magnet 301 is arranged close to the outer edge of the magnet platform 300, so that the density of the magnetic induction lines at the outer edge of the carrier platform 100 is greater than that at the center of the carrier platform 100, that is, more magnetic induction lines pass through the metal heating element 200 at the outer edge of the carrier platform 100.

[0062] Therefore, the metal heating element 200 at the outer edge of the carrier platform 100 generates more heat energy, so that the temperature at the outer edge of the carrier platform 100 is higher, thereby ensuring that the protective liquid of different thicknesses on the wafer A can be dried at the same time.

[0063] In this embodiment, the distance between the center of the magnet platform 300 and the center of the permanent magnet 301 is R1, and the radius of the magnet platform 300 is R2, R1>R2 / 2. The permanent magnet 301 is arranged close to the outer edge of the magnet platform 300, so that the density of the magnetic induction lines at the outer edge of the carrier platform 100 is greater than that at the center of the carrier platform 100, that is, more magnetic induction lines pass through the metal heating element 200 at the outer edge of the carrier platform 100. Figure 5

[0064] Figure 10 Figure 11 In another specific embodiment, the distance between the metal heating element 200 and the magnet platform 300 is different.

[0065] In this embodiment, by arranging the metal heating element 200 at different heights in the carrier platform 100, the metal heating element 200 at the outer edge of the carrier platform 100 is passed through by more magnetic induction lines than the metal heating element 200 at the center of the carrier platform 100.

[0066] Therefore, the metal heating element 200 at the outer edge of the carrier platform 100 generates more heat energy, so that the temperature at the outer edge of the carrier platform 100 is higher, thereby ensuring that the protective liquid of different thicknesses on the wafer A can be dried at the same time.

[0067] Specifically, referring to Figure 10 , the distance between the metal heating element 200 and the magnet platform 300 gradually increases from the center of the carrier platform 100 outward. Alternatively, referring to Figure 11 , the distance between the metal heating element 200 and the magnet platform 300 gradually decreases from the center of the carrier platform 100 outward.

[0068] In another embodiment, the first rotating shaft 400 is used to drive the magnet platform 300 to rotate.

[0069] ​​​In the embodiment, the top end of the first rotating shaft 400 is connected to the bottom of the magnet platform 300, and the magnet platform 300 can rotate relative to the bearing platform 100 under the driving of the first rotating shaft 400. The bearing platform 100 cannot rotate.

[0070] By keeping the bearing platform 100 stationary, the splashing of the protective liquid on the wafer A under the centrifugal force caused by the rotation of the bearing platform 100 can be avoided, and the wafer A can also be prevented from having a large thickness difference at different positions.

[0071] In the embodiment, it is necessary to keep the balance of the temperature of the wafer A as a whole. The distance between the bearing platform 100 and the magnet platform 300 can be adjusted to keep the number of magnetic field lines generated by the permanent magnet 301 passing through each metal heating element 200 as much as possible, thereby ensuring the balance of the temperature of the bearing platform 100 and the wafer A.

[0072] It should be particularly noted that since the distance between the bearing platform 100 and the magnet platform 300 affects the number of magnetic field lines passing through the metal heating element 200, the number of magnetic field lines passing through the metal heating element 200 in the present application is based on the distance between the bearing platform 100 and the magnet platform 300 as the radius of the permanent magnet 301.

[0073] In another embodiment, the first rotating shaft 400 is used to drive the bearing platform 100 to rotate, and the wafer drying device further comprises a second rotating shaft 600 for driving the magnet platform 300 to rotate.

[0074] In the embodiment, the first rotating shaft 400 drives the bearing platform 100 to rotate, and the second rotating shaft 600 drives the magnet platform 300 to rotate. The first rotating shaft 400 is sleeved in the second rotating shaft 600. The second rotating shaft 600 is a hollow rotating shaft, the center of the magnet platform 300 is provided with a through hole 302, and the first rotating shaft 400 passes through the second rotating shaft 600 and the through hole 302 to be connected to the bearing platform 100.

[0075] By driving the bearing platform 100 and the magnet platform 300 to rotate through two rotating shafts, the first rotating shaft 400 and the second rotating shaft 600 rotate in opposite directions when drying the protective liquid on the wafer A, thereby accelerating the drying efficiency of the protective liquid, and also avoiding the splashing of the protective liquid caused by the excessive rotation speed of the bearing platform 100.

[0076] As for the arrangement of the metal heating element 200, it can be specifically referred to the two aforementioned embodiments, which will not be described here.

[0077] In summary, the utility model discloses the first pivot 400 drive the bearing platform 100 or the magnet platform 300 rotation, make the metal heating element 200 produce heat energy, and the heat is transmitted to the wafer A on bearing platform 100, thereby accelerate the dry knot of protective fluid on wafer A, improve the capacity, avoid the abnormal residual of protective fluid.

[0078] It should be understood that, although the present specification is described in terms of embodiments, not every embodiment contains only one independent technical solution, the specification is described only for the sake of clarity, the skilled person should consider the specification as a whole, the technical solutions in each embodiment can also be combined appropriately to form other embodiments that the skilled person can understand.

[0079] The series of detailed descriptions listed above are only specific descriptions of the feasible embodiments of the utility model, and are not used to limit the protection scope of the utility model, and equivalent embodiments or changes made without departing from the spirit of the utility model art should be included in the protection scope of the utility model.

Claims

1. A wafer drying apparatus characterized by comprising: The application relates to a wafer drying device. The wafer drying device comprises: a bearing platform (100) for bearing a wafer; a metal heating element (200) arranged in the bearing platform (100); a magnet platform (300) arranged in a height direction apart from the bearing platform (100), wherein a plurality of permanent magnets (301) are arranged in the magnet platform (300), and the magnetic poles of two adjacent permanent magnets (301) are opposite.

2. The wafer drying apparatus according to claim 1, characterized by: a first rotating shaft (400) for driving the bearing platform (100) or the magnet platform (300) to rotate.

3. The wafer drying apparatus according to claim 2, characterized by: The bearing platform (100) is circular, and the metal heating element (200) is circular ring-shaped, wherein a plurality of metal heating elements (200) are arranged in a radial direction of the bearing platform (100) and are spaced apart. The spacing between two adjacent metal heating elements (200) is the same.

4. The wafer drying apparatus of claim 2, wherein: Alternatively, the spacing between two adjacent metal heating elements (200) gradually decreases from the center of the bearing platform (100) to the outside. The spacing between the plurality of metal heating elements (200) and the magnet platform (300) is different.

5. The wafer drying device according to claim 4, wherein: the number of magnetic induction lines passing through any metal heating element (200) is the same.

6. The wafer drying apparatus according to any one of claims 1 to 5, characterized by: Alternatively, the number of magnetic induction lines passing through the metal heating element (200) gradually increases from the center of the bearing platform (100) to the outside.

7. The wafer drying apparatus of claim 6, wherein: The magnet platform (300) and the permanent magnets (301) are circular, a plurality of permanent magnets (301) are arranged in a circumferential direction of the magnet platform (300) and are equally spaced, and the centers of all the permanent magnets (301) are concentric.

8. The wafer drying apparatus of claim 6, wherein: The first rotating shaft (400) is used for driving the bearing platform (100) to rotate, and the spacing between the center of the magnet platform (300) and the center of the permanent magnet (301) is greater than half the radius of the magnet platform (300).

9. The wafer drying apparatus of claim 1, wherein: The spacing between the bearing platform (100) and the magnet platform (300) is equal to the radius of the permanent magnet (301).

10. The wafer drying apparatus according to claim 9, characterized by: The first rotating shaft (400) is used for driving the bearing platform (100) to rotate, and the magnet platform (300) is provided with a through hole (302) for the first rotating shaft (400) to pass through, and the wafer drying device further comprises a lifting element (500) for driving the magnet platform (300) to move along the first rotating shaft (400) in an axial direction. The wafer drying device further comprises a second rotating shaft (600) for driving the magnet platform (300) to rotate, and the first rotating shaft (400) is sleeved in the second rotating shaft (600).

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