Power module and power conversion equipment
By integrating single-phase power modules and distributing semiconductor arrays on different heat dissipation surfaces of the heat exchanger, the problem of low space utilization of power modules is solved, achieving a compact and efficient power module design and improving the overall space utilization and power density of the machine.
Patent Information
- Application Number
- CN202423053239.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-10
- Publication Date
- 2025-12-23
- Estimated Expiration
- 2034-12-10
AI Technical Summary
In existing technologies, the space utilization rate of power modules is low, resulting in an increase in the overall size and weight of the device, and making it impossible to effectively expand capacity.
Design a power module that integrates multiple single-phase power modules into one module, and places semiconductor groups of different phases on different heat dissipation surfaces of a heat exchanger for heat dissipation. The heat exchanger is used for heat dissipation, and a compact layout design is adopted to reduce the size and improve the heat dissipation efficiency.
It improves the overall space utilization, reduces costs, enhances power density, facilitates parallel use, and has low maintenance costs.
Smart Images
Figure CN223714411U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of power electronics technology, and more specifically, to a power module and power conversion device. Background Technology
[0002] In this field, power modules are typically single-phase modules, and each minimum converter unit requires at least three grid-side single-phase power modules and three generator-side single-phase power modules. If power capacity expansion is required, the number of power modules needs to be increased or the power module level needs to be upgraded, which increases the overall size and weight of the power modules and results in lower space utilization of the entire unit.
[0003] Therefore, how to improve the space utilization rate of the whole machine has become a technical problem that urgently needs to be solved by those skilled in the art. Utility Model Content
[0004] In view of this, the purpose of this application is to provide a power module to improve the space utilization of the whole machine.
[0005] Another objective of this application is to provide a power conversion device having the aforementioned power module.
[0006] To achieve the above objectives, this application provides the following technical solution:
[0007] A power module, comprising:
[0008] Module body;
[0009] A heat exchanger is disposed on the module body, and the heat exchanger has two heat dissipation surfaces arranged opposite each other;
[0010] At least three semiconductor groups, each semiconductor group forming three different phases of the power module, and at least one semiconductor group and the remaining semiconductor groups are located on different heat dissipation surfaces of the heat exchanger.
[0011] Optionally, the power module described above includes an AC connection busbar and a DC connection busbar;
[0012] The AC connection busbar is adapted to the semiconductor group, and the AC connection busbar is connected to the semiconductor group;
[0013] The DC connection busbar includes at least one, and the DC connection busbar is respectively provided with a first DC connection position and a second DC connection position adapted to each of the semiconductor groups. The first DC connection position is used to connect to the first component, and the semiconductor group is connected to the second DC connection position.
[0014] Optionally, in the power module described above, there are two DC connection buses, and the two DC connection buses are respectively connected to the semiconductor groups on different heat dissipation surfaces.
[0015] Optionally, in the power module described above, the first DC connection position includes multiple bus connection terminals, and the bus connection terminals with the same potential on the first DC connection positions of the two DC connection buses are stacked accordingly.
[0016] Optionally, in the above power module, the first DC connection position of the DC connection busbar includes a positive busbar connection terminal, a negative busbar connection terminal, and a busbar midpoint connection terminal; or,
[0017] The first DC connection position of the DC connection busbar includes a positive busbar connection end and a negative busbar connection end.
[0018] Optionally, in the above power module, the semiconductor group includes a semiconductor module, and the semiconductor module is attached to the heat dissipation surface of the heat exchanger, and the second DC connection positions of the AC connection bus and the DC connection bus are both connected to the semiconductor module; or,
[0019] The semiconductor group includes multiple semiconductor modules, and each semiconductor module is attached to the heat dissipation surface of the heat exchanger. The AC connection busbar is connected to any one of the semiconductor modules, and the second DC connection position of the DC connection busbar is connected to each semiconductor module.
[0020] Optionally, in the power module described above, the semiconductor group includes multiple semiconductor modules, and each of the semiconductor modules is arranged in parallel on the heat dissipation surface of the heat exchanger, or each of the semiconductor modules is arranged in at least two rows.
[0021] Optionally, the power module further includes an adapter board and a control board. The control board includes a driver board and a waveform generator board. The adapter board is adapted to the semiconductor module and connected to the semiconductor module. The control board is used to drive each of the adapter boards.
[0022] Optionally, in the power module described above, the control board further includes a power supply board, which is electrically connected to the drive board.
[0023] Optionally, in the above power module, the control board is disposed on the heat dissipation surface of the heat exchanger; or,
[0024] The module body defines an isolation space to accommodate the control board, which is disposed within the isolation space.
[0025] Optionally, in the power module described above, a current sensor is provided on the AC connection busbar.
[0026] Optionally, in the power module described above, the heat exchanger includes a first heat dissipation port for the inflow of cooling medium and a second heat dissipation port for the outflow of cooling medium, wherein the first heat dissipation port and the second heat dissipation port are located on the same end face or different end faces of the module body.
[0027] A power conversion device, comprising a power module as described in any of the preceding claims.
[0028] The power module provided in this application uses at least three semiconductor groups to form three different phases. At least one semiconductor group and the remaining semiconductor groups are located on two different heat dissipation surfaces of a heat exchanger, allowing the heat exchanger to dissipate heat from each semiconductor group. As can be seen from the above example, the power module provided in this application reduces the overall cost by integrating multiple single-phase power modules into one. Furthermore, the different phase semiconductor groups are located on different heat dissipation surfaces of the heat exchanger, improving the heat dissipation efficiency and utilization rate of the heat exchanger. The layout is more compact, reducing the size of the power module and improving the overall space utilization rate. It also features high power density, good expansion capability, parallel operation, convenient maintenance, and low maintenance costs.
[0029] The technical features mentioned above, those to be mentioned below, and those shown individually in the accompanying drawings can be combined arbitrarily, provided that the combined technical features are not contradictory. All feasible combinations of features are the technical content explicitly described herein. Any one of the multiple sub-features contained in the same statement can be applied independently, without necessarily being applied together with other sub-features. Attached Figure Description
[0030] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of this application. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.
[0031] Figure 1 This is a schematic diagram of the power module provided in the embodiments of this application;
[0032] Figure 2 This is a schematic diagram of the internal structure of the power module provided in the embodiments of this application;
[0033] Figure 3 This is a front view of the internal structure of the power module provided in the embodiments of this application;
[0034] Figure 4This is a schematic diagram of the rear side of the internal structure of the power module provided in the embodiments of this application;
[0035] Figure 5 A front view of the semiconductor group distribution provided in an embodiment of this application;
[0036] Figure 6 A schematic diagram of the semiconductor group distribution provided in an embodiment of this application;
[0037] Figure 7 Schematic diagram of the semiconductor module layout provided in the embodiments of this application Figure 1 ;
[0038] Figure 8 Schematic diagram of the semiconductor module layout provided in the embodiments of this application Figure 2 ;
[0039] Figure 9 Schematic diagram of the semiconductor module layout provided in the embodiments of this application Figure 3 ;
[0040] Figure 10 Schematic diagram of the semiconductor module layout provided in the embodiments of this application Figure 4 ;
[0041] Figure 11 Schematic diagram of the semiconductor module layout provided in the embodiments of this application Figure 5 ;
[0042] Figure 12 Schematic diagram of the semiconductor module layout provided in the embodiments of this application Figure 6 .
[0043] Among them, 100 is the module body and 101 is the isolation space;
[0044] 200 is the heat exchanger, 201 is the heat dissipation surface, 2011 is the first heat dissipation surface, 2012 is the second heat dissipation surface, 202 is the first heat dissipation port, and 203 is the second heat dissipation port;
[0045] 300 is a semiconductor group, 301 is a semiconductor module, 3011 is a first DC connection port, 302 is a first semiconductor group, 303 is a second semiconductor group, and 304 is a third semiconductor group;
[0046] 400 is the AC connection busbar, 401 is the first AC connection busbar, 402 is the second AC connection busbar, 403 is the third AC connection busbar, 404 is the current sensor, 405 is the support part, and 406 is the mounting base.
[0047] 500 is the DC connection busbar, 501 is the first DC connection position, 502 is the second DC connection position, 5021 is the second DC connection hole, 503 is the first DC connection busbar, and 504 is the second DC connection busbar.
[0048] 600 is the adapter board, 601 is the driver board, and 602 is the wave generator board. Detailed Implementation
[0049] The core of this application is to provide a power module to improve the space utilization of the whole machine.
[0050] Another core aspect of this application is to provide a power conversion device having the aforementioned power module.
[0051] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.
[0052] In related fields, such as wind power, power modules are generally single-phase modules, and each minimum wind power converter unit requires at least three grid-side single-phase power modules and three turbine-side single-phase power modules. If power capacity needs to be expanded, the number of power modules needs to be increased or the power module level needs to be upgraded, which increases the size and weight of the power modules in the whole unit, resulting in lower space utilization of the whole unit.
[0053] Therefore, such as Figure 1 As shown in the figure, this application discloses a power module, including a module body 100, a heat exchanger 200, and a semiconductor group 300. By integrating multiple single-phase power modules into one power module, the cost of the entire machine can be reduced. Meanwhile, the semiconductor groups 300 of different phases are located on different heat dissipation surfaces 201 of the heat exchanger 200, which can improve the heat dissipation efficiency and utilization of the heat exchanger 200, and the layout is more compact, reducing the size of the power module, improving the space utilization of the entire machine, and providing high power density with good expansion effect. It can be used in parallel, is easy to maintain, and has low maintenance costs.
[0054] The following will combine Figures 1 to 12 The power module disclosed in the embodiments of this application will be explained and described in detail.
[0055] like Figure 1As shown, a heat exchanger 200 is disposed on the module body 100, and the heat exchanger 200 has two heat dissipation surfaces 201 arranged opposite each other. For ease of understanding, the two heat dissipation surfaces 201 of the heat exchanger 200 are defined as a first heat dissipation surface 2011 and a second heat dissipation surface 2012, respectively. The first heat dissipation surface 2011 and the second heat dissipation surface 2012 are respectively arranged opposite each other on both sides of the heat exchanger 200, that is, the first heat dissipation surface 2011 and the second heat dissipation surface 2012 are located on the front and back sides of the heat exchanger 200, respectively. Meanwhile, the semiconductor group 300 may include at least three, each semiconductor group 300 forming three different phases of the power module, and at least one semiconductor group 300 and the other semiconductor groups 300 are respectively located on different heat dissipation surfaces 201 of the heat exchanger 200, so that the heat exchanger 200 dissipates heat from each semiconductor group 300. By integrating multiple single-phase power modules into one power module, the cost of the entire machine can be reduced. Meanwhile, the semiconductor groups 300 of different phases are located on different heat dissipation surfaces 201 of the heat exchanger 200, which can improve the heat dissipation efficiency and utilization of the heat exchanger 200. The layout is more compact, which can reduce the volume of the power module, improve the space utilization of the whole machine, and has high power density and good expansion effect. It can be used in parallel, is easy to maintain, and has low maintenance cost.
[0056] In some embodiments, such as Figure 5 and Figure 6 As shown, three semiconductor groups 300 can be used, with one semiconductor group 300 for each phase. For ease of understanding, the three semiconductor groups 300 are defined as the first semiconductor group 302, the second semiconductor group 303, and the third semiconductor group 304. The first semiconductor group 302 forms the first phase of the power module, the second semiconductor group 303 forms the second phase, and the third semiconductor group 304 forms the third phase. Simultaneously, the first semiconductor group 302 and the third semiconductor group 304 can be located on the first heat dissipation surface 2011 of the heat exchanger 200, and the second semiconductor group 303 can be located on the second heat dissipation surface 2012 of the heat exchanger 200, thus integrating the three single-phase power modules into one power module and reducing the overall cost. Meanwhile, the three phase semiconductor groups 300 are located on different heat dissipation surfaces 201 of the heat exchanger 200, which can improve the heat dissipation efficiency and utilization of the heat exchanger 200, and make the layout of the power module more compact, which can reduce the volume of the power module, improve the space utilization of the whole machine, and have higher power density and better expansion effect. They can be used in parallel, are easy to maintain, and have low maintenance costs.
[0057] Of course, six, nine, or more semiconductor groups 300 can be used, and two, three, or more semiconductor groups 300 can be connected in parallel for each phase to improve the power density of the power module and achieve greater power output. The specific number of semiconductor groups 300 can be selected and determined according to the actual application, and this article does not impose any restrictions.
[0058] like Figures 1 to 3 As shown, the power module may include an AC connection busbar 400 and a DC connection busbar 500. The AC connection busbar 400 is adapted to the semiconductor group 300, meaning each semiconductor group 300 corresponds to one AC connection busbar 400. One end of the AC connection busbar 400 is electrically connected to the semiconductor group 300, and the other end can be electrically connected to a second component, which may be a reactor, motor, transformer, or other load equipment. Meanwhile, the DC connection bus 500 may include at least one, and a first DC connection position 501 and a second DC connection position 502 adapted to each semiconductor group 300 are respectively provided on the DC connection bus 500. That is, a second DC connection position 502 corresponding to each semiconductor group 300 is respectively provided on the DC connection bus 500, and each semiconductor group 300 is electrically connected to the corresponding second DC connection position 502. The first DC connection position 501 of the DC connection bus 500 can be electrically connected to a first component. The first component can be a capacitor bank or other semiconductor devices, such as a power device made of new semiconductor materials such as silicon carbide (SiC), so that the semiconductor groups 300 of each phase can share a capacitor bank, thereby shortening the commutation path, effectively reducing the stray inductance of the commutation path, and reducing the number of capacitors.
[0059] In some embodiments, such as Figure 3 and Figure 4 As shown, there may be two DC connection buses 500, and the two DC connection buses 500 are respectively connected to semiconductor groups 300 on different heat dissipation surfaces 201. For ease of understanding, the two DC connection buses 500 are defined as the first DC connection bus 503 and the second DC connection bus 504. The second DC connection position 502 of the first DC connection bus 503 is electrically connected to each semiconductor group 300 on the first heat dissipation surface 2011 of the heat exchanger 200, and the second DC connection position 502 of the second DC connection bus 504 is electrically connected to each semiconductor group 300 on the second heat dissipation surface 2012 of the heat exchanger 200.
[0060] Meanwhile, the first DC connection position 501 may include multiple bus connection terminals with different potentials. The bus connection terminals with the same potential on the first DC connection positions 501 of the two DC connection busbars 500 can be stacked accordingly. That is, the bus connection terminals with the same potential on the first DC connection positions 501 of the first DC connection busbar 503 and the first DC connection positions 501 of the second DC connection busbar 504 correspond one-to-one and are stacked to form electrodes with different potentials of the power module so as to be electrically connected to the first component.
[0061] In some embodiments, a single DC connection busbar 500 may be used, and the DC connection busbar 500 has two opposing connection surfaces. A second DC connection position 502 is provided on each of the two connection surfaces, and a clamping cavity is formed between the two connection surfaces. During connection, the second DC connection positions 502 on the two connection surfaces of the DC connection busbar 500 can be electrically connected to semiconductor groups 300 on two different heat dissipation surfaces 201 of the heat exchanger 200, so that the semiconductor groups 300 on the two different heat dissipation surfaces 201 can share a single DC connection busbar 500.
[0062] In some embodiments, such as Figures 1 to 6 As shown, the power module can be a three-level power module, meaning that a positive busbar connection terminal, a negative busbar connection terminal, and a busbar midpoint connection terminal are respectively set on the first DC connection position 501 of the DC connection busbar 500 to improve the power density and efficiency of the whole unit. Of course, the power module can also be a two-level power module, meaning that a positive busbar connection terminal and a negative busbar connection terminal are respectively set on the first DC connection position 501 of the DC connection busbar 500 to improve the stability and reliability of the whole unit and meet the needs of low-voltage scenarios.
[0063] like Figures 1 to 6 As shown, the semiconductor group 300 may include at least one semiconductor module 301, and the semiconductor module 301 is attached to the heat dissipation surface 201 of the heat exchanger 200. One semiconductor module 301 may be used, and the second DC connection positions 502 of both the AC connection bus 400 and the DC connection bus 500 are connected to the semiconductor module 301. Alternatively, multiple semiconductor modules 301 may be used, i.e., two, three, or more semiconductor modules 301 may be used, and the AC connection bus 400 is connected to any one of the individual semiconductor modules 301, while the second DC connection positions 502 of the DC connection bus 500 are connected to each individual semiconductor module 301. It should be noted that when the power module uses a two-level power module, each semiconductor group 300 may include one or two semiconductor modules 301; when the power module uses a three-level power module, each semiconductor group 300 may include three or more semiconductor modules 301 to improve the power density of the power module.
[0064] In some embodiments, such as Figure 1 and Figure 4 As shown, the AC connection busbar 400 can be bent to form a first connection portion and a second connection portion, and the first connection portion and the second connection portion are connected by a support portion 405. The first connection portion of the AC connection busbar 400 can be connected to a corresponding AC connection hole on the semiconductor module 301 using fasteners such as bolts, and the second connection portion of the AC connection busbar 400 can be electrically connected to a second component. Meanwhile, the support portion 405 of the AC connection busbar 400 can be fixed to the heat dissipation surface 201 of the heat exchanger 200 via a mounting base 406 to ensure the stability of the AC connection busbar 400 connection.
[0065] In the above embodiments, such as Figures 1 to 3 As shown, a current sensor 404 can be provided on the second connection part of each AC connection bus 400, and the current sensor 404 can be connected to an external device. The current flowing through the AC connection bus 400 can be detected by the current sensor 404, and the current signal of the AC connection bus 400 can be transmitted to the control system of the external device.
[0066] In some embodiments, such as Figure 5 and Figure 6 As shown, a plurality of first DC connection holes 3011 are provided on the semiconductor module 301. Four first DC connection holes 3011 can be used simultaneously. Figure 3 and Figure 4 As shown, the second DC connection position 502 of the DC connection busbar 500 is provided with a second DC connection hole 5021 that is adapted to the first DC connection hole 3011. The second DC connection position 502 of the DC connection busbar 500 can correspond to the first DC connection hole 3011 on each semiconductor module 301 through the second DC connection hole 5021, and are connected by fasteners such as bolts.
[0067] In some embodiments, such as Figures 5 to 12 As shown, each semiconductor group 300 may include multiple semiconductor modules 301, that is, the number of semiconductor modules 301 in each semiconductor group 300 may be two, three or more. Figure 5 and Figure 6 As shown, each semiconductor module 301 can be arranged in parallel on the heat dissipation surface 201 of the heat exchanger 200, or, as... Figures 7 to 12 As shown, each semiconductor module 301 can be configured in at least two rows.
[0068] In some embodiments, such as Figure 5 and Figure 6As shown, the number of semiconductor modules 301 in each semiconductor group 300 can be three, and the AC connection busbar 400 can be connected to the semiconductor module 301 at the middle position. Specifically, the heat dissipation surface 201 of the heat exchanger 200 can have a rectangular cross-section, and each semiconductor module 301 can be arranged parallel to the short side direction of the heat dissipation surface 201, so that the layout of the power module is more compact and smaller in volume, thereby further improving the space utilization rate of the whole machine. For the convenience of understanding, the case where there are three semiconductor groups 300 is used for explanation and illustration, and each semiconductor group 300 includes three semiconductor modules 301 arranged in parallel. At this time, the AC connection busbar 400 connected to the first semiconductor group 302 can be defined as the first AC connection busbar 401, the AC connection busbar 400 connected to the second semiconductor group 303 can be defined as the second AC connection busbar 402, and the AC connection busbar 400 connected to the third semiconductor group 304 can be defined as the third AC connection busbar 403. Among them, the first connection part of the first AC connection busbar 401 can be connected to the semiconductor module 301 at the middle position in the first semiconductor group 302, the first connection part of the second AC connection busbar 402 can be connected to the semiconductor module 301 at the middle position in the second semiconductor group 303, and the first connection part of the third AC connection busbar 403 can be connected to the semiconductor module 301 at the middle position in the third semiconductor group 304, so that the distance between adjacent two AC connection busbars 400 is equal, which is convenient for the second connection part of the AC connection busbar 400 to be electrically connected to the second component, and can make the layout of the whole power module more compact.
[0069] In some embodiments, as Figure 7 and Figure 8 shown, each semiconductor group 300 can include multiple semiconductor modules 301, that is, the number of semiconductor modules 301 in each semiconductor group 300 can be two, three or more, and each semiconductor module 301 can be arranged in at least two rows. When each semiconductor group 300 uses three semiconductor modules 301, each semiconductor module 301 can be arranged in a "pin" shape, that is, one semiconductor module 301 is arranged in the row close to the AC connection busbar 400, and two semiconductor modules 301 are arranged in the row close to the DC connection busbar 500, and the semiconductor module 301 close to the AC connection busbar 400 is located at the middle position between the two semiconductor modules 301 close to the DC connection busbar 500, forming an approximate "pin" shape arrangement, as Figure 7 shown. Of course, an inverted "pin" shape arrangement can also be adopted, that is, two semiconductor modules 301 are arranged in the row close to the AC connection busbar 400, one semiconductor module 301 is arranged in the row close to the DC connection busbar 500, and the semiconductor module 301 close to the DC connection busbar 500 is located at the middle position between the two semiconductor modules 301 close to the AC connection busbar 400, forming an approximate inverted "pin" shape arrangement, as Figure 8 shown.
[0070] In some embodiments, such as Figure 9 As shown, the three semiconductor modules 301 in each semiconductor group 300 can also be arranged in an L-shape, that is, one semiconductor module 301 is placed in the row closer to the AC connection busbar 400, and two semiconductor modules 301 are placed in the row closer to the DC connection busbar 500. The semiconductor module 301 closer to the AC connection busbar 400 is aligned with any one of the two semiconductor modules 301 closer to the DC connection busbar 500, forming an approximate L-shaped arrangement. Of course, as... Figure 10 As shown, the three semiconductor modules 301 of each semiconductor group 300 can also be arranged in an inverted L-shape, that is, two semiconductor modules 301 are arranged in the row closer to the AC connection bus 400, and one semiconductor module 301 is arranged in the row closer to the DC connection bus 500. The semiconductor module 301 closer to the DC connection bus 500 is aligned with any one of the two semiconductor modules 301 closer to the AC connection bus 400, forming an approximately inverted L-shaped arrangement.
[0071] It should be noted that when the number of semiconductor modules 301 is four, five, or more, each semiconductor module 301 can be arranged in two, three, or more rows, and the semiconductor modules 301 can be distributed in a matrix, such as... Figure 11 As shown, the semiconductor modules 301 in each row can also be staggered with those in adjacent rows, such as... Figure 12 As shown, this article does not impose any limitations.
[0072] In some embodiments, such as Figure 2 As shown, the power module may further include an adapter board 600 and a control board. The adapter board 600 is adapted to the semiconductor module 301, meaning that one adapter board 600 is provided for each semiconductor module 301 to drive the semiconductor module 301. The control board includes a driver board 601 and a waveform transmitter board 602. The driver board 601 is adapted to the semiconductor group 300, meaning one driver board 601 is provided for each semiconductor group 300. The driver board 601 of each semiconductor group 300 can drive each adapter board 600 of that semiconductor group 300. Furthermore, the waveform transmitter board 602 can transmit electrical signals to each driver board 601.
[0073] In some embodiments, the control board may be mounted on the heat dissipation surface 201 of the heat exchanger 200. Optionally, the control board may be mounted on the second heat dissipation surface 2012 of the heat exchanger 200, i.e., the heat dissipation surface 201 where the second semiconductor group 303 is located. Of course, an isolation space 101 for accommodating the control board may also be formed on the module body 100, and the isolation space 101 may be formed by enclosing a metal plate, thereby allowing the control board to be placed within the isolation space 101 and improving anti-interference performance.
[0074] In the above embodiments, the control board may further include a power board, and the power board is electrically connected to the drive board 601 to provide power to each drive board 601.
[0075] In some embodiments, such as Figures 1 to 6 As shown, the heat exchanger 200 includes a first heat dissipation port 202 through which cooling medium flows in and a second heat dissipation port 203 through which cooling medium flows out. The cooling medium flows into the heat exchanger 200 through the first heat dissipation port 202 and out through the second heat dissipation port 203, thereby dissipating heat from each semiconductor assembly 300. Specifically, the heat exchanger 200 can be connected and fixed to both ends of the module body 100 as a whole. The first heat dissipation port 202 and the second heat dissipation port 203 can be located on the same end face of the module body 100, or they can be located on different end faces. For ease of understanding, the two opposite end faces of the module body 100 are defined as the first end face and the second end face, respectively, and the heat exchanger 200 is connected and fixed between the first end face and the second end face. The first heat dissipation port 202 and the second heat dissipation port 203 can be simultaneously located on either the first end face or the second end face to increase the flow path of the cooling medium, thereby increasing the heat exchange area and improving the heat dissipation efficiency. Of course, the first heat dissipation port 202 and the second heat dissipation port 203 can also be respectively provided on the first end face and the second end face, so that the cooling medium flows into the heat exchanger 200 from the first heat dissipation port 202 on the first end face and then flows out from the second heat dissipation port 203 on the second end face, thereby realizing heat dissipation for each semiconductor group 300. It should be noted that the cooling medium can be a liquid cooling medium such as cooling water or oil, or a gaseous cooling medium such as cold air, which is not limited here.
[0076] This application also discloses a power conversion device, including the power module disclosed in the above embodiments. Therefore, this power module has all the technical effects of the above-mentioned power modules, and will not be repeated here. The power conversion device can be an inverter, rectifier, etc.
[0077] The terms "first" and "second," etc., in the specification, claims, and accompanying drawings of this application are used to distinguish different objects, not to describe a specific order. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or apparatus that includes a series of steps or units may include steps or units not listed, but rather not listed.
[0078] The above description of the disclosed embodiments enables those skilled in the art to make or use this application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of this application. Therefore, this application is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims
1. A power module, characterized by The utility model relates to a power module, comprising: a module body (100); a heat exchanger (200) arranged on the module body (100), and the heat exchanger (200) having two opposite heat dissipation surfaces (201); at least three semiconductor groups (300), each of the semiconductor groups (300) forming three different phases of the power module, and at least one of the semiconductor groups (300) being arranged on a different heat dissipation surface (201) of the heat exchanger (200) from the remaining semiconductor groups (300).
2. The power module of claim 1, wherein, The utility model relates to an alternating current connecting busbar (400) and a direct current connecting busbar (500); the alternating current connecting busbar (400) is adapted to the semiconductor groups (300), and the alternating current connecting busbar (400) is connected to the semiconductor groups (300); the direct current connecting busbar (500) comprises at least one, and the direct current connecting busbar (500) is provided with a first direct current connecting position (501) and a second direct current connecting position (502) adapted to each of the semiconductor groups (300), respectively, the first direct current connecting position (501) is used for being connected to a first component, and the semiconductor groups (300) are connected to the second direct current connecting position (502).
3. The power module of claim 2, wherein, The direct current connecting busbar (500) comprises two, and the two direct current connecting busbars (500) are connected to the semiconductor groups (300) on different heat dissipation surfaces (201).
4. The power module of claim 3, wherein, The first direct current connecting position (501) of the direct current connecting busbar (500) comprises a positive bus connecting end, a negative bus connecting end and a bus midpoint connecting end; or, 5. The power module of any one of claims 2 to 4, wherein, The first direct current connecting position (501) of the direct current connecting busbar (500) comprises a positive bus connecting end and a negative bus connecting end. The semiconductor group (300) comprises a semiconductor module (301), and the semiconductor module (301) is attached to the heat dissipation surface (201) of the heat exchanger (200), the second direct current connecting position (502) of the alternating current connecting busbar (400) and the direct current connecting busbar (500) are connected to the semiconductor module (301); or, 6. The power module of claim 2, wherein, The semiconductor group (300) comprises a plurality of semiconductor modules (301), and each of the semiconductor modules (301) is attached to the heat dissipation surface (201) of the heat exchanger (200), the alternating current connecting busbar (400) is connected to any one of the semiconductor modules (301), and the second direct current connecting position (502) of the direct current connecting busbar (500) is connected to each of the semiconductor modules (301). The semiconductor group (300) comprises a plurality of semiconductor modules (301), and each of the semiconductor modules (301) is arranged in parallel on the heat dissipation surface (201) of the heat exchanger (200), or each of the semiconductor modules (301) is arranged in at least two rows.
7. The power module of claim 6, wherein, 8. The power module of claim 6, wherein, The control board further comprises a power supply board, which is electrically connected with the driving board (601).
9. The power module of claim 8, wherein, The control board is arranged on a heat dissipation surface (201) of the heat exchanger (200); or, 10. The power module of claim 8 or 9, wherein, The module body (100) defines an isolation space (101) for accommodating the control board, and the control board is arranged in the isolation space (101). A current sensor (404) is arranged on the AC connection busbar (400).
11. The power module of claim 2, wherein, The heat exchanger (200) comprises a first heat dissipation port (202) for flowing in cooling medium and a second heat dissipation port (203) for flowing out the cooling medium, and the first heat dissipation port (202) and the second heat dissipation port (203) are located on the same end surface or different end surfaces of the module body (100).
12. The power module of claim 1, wherein, The power module comprises the power module as claimed in any one of claims 1 to 12.
13. A power conversion device, characterized by,