Target material structure
By designing the target blank structure so that the side of the second target blank is perpendicular to the bottom surface, combined with the stepped structure of the substrate, the problems of edge chipping and slag shedding of tungsten silicon target materials are solved, thereby improving the performance and reliability of the device.
Patent Information
- Application Number
- CN202520159470.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-23
- Publication Date
- 2025-12-26
- Estimated Expiration
- 2035-01-23
AI Technical Summary
During the processing of tungsten-silicon sputtering targets, the outermost edge is prone to chipping and flaking, which affects the performance and reliability of the device.
The target blank structure is designed so that the side surface of the second target blank is perpendicular to the bottom surface, avoiding sharp corners. The connection is made by rounding the corners and combining it with the stepped structure of the substrate to increase the edge thickness and contact area.
This effectively avoids chipping and slag shedding at the outermost edge of the target blank, improving the performance and reliability of the device.
Smart Images
Figure CN223723203U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model belongs to the technical field of semiconductor manufacturing, and relates to a target material structure. BACKGROUND
[0002] The tungsten-silicon target material is mainly used for film coating technologies such as physical vapor deposition (PVD) and chemical vapor deposition (CVD) to prepare thin film materials with specific properties. In the process of manufacturing semiconductor chips, the tungsten-silicon target material can be used to prepare thin films such as metallization layers and barrier layers. For example, by using the physical vapor deposition technology, the tungsten-silicon alloy is sputtered onto the surface of a silicon wafer to form a tungsten-silicon compound thin film, which serves as a contact layer between the metal and the semiconductor, thereby effectively reducing the contact resistance and improving the performance and reliability of the device.
[0003] The tungsten-silicon target material is usually composed of a tungsten-silicon target blank and a copper substrate, and its specific structure is as follows: a bevel is designed at the edge of the sputtering surface of the target blank, and the bevel is connected to the bottom surface through a round chamfer; the bottom surface of the target blank is connected to the substrate. Due to the relationship between the bevel and the chamfer, the outermost edge of the target blank is the thinnest area, and its shape is close to a sharp corner. Because of the hard and brittle characteristics of tungsten-silicon material, the outermost edge of the target blank is prone to corner collapse and slagging during processing; and the target blank and the substrate are connected through solder, which can also damage the sharp corner of the edge during the removal of the solder, thereby exacerbating the corner collapse and slagging of the edge.
[0004] Therefore, there is an urgent need to provide a solution that can avoid the corner collapse and slagging of the outermost edge of the target blank. UTILITY MODEL CONTENTS
[0005] In view of the deficiencies of the prior art, the purpose of the utility model is to provide a target material structure. The utility model limits the verticality of the side surface and the bottom surface of the second layer target blank, thereby avoiding the appearance of sharp corners at the outermost edge of the target blank, and further avoiding the corner collapse and slagging of the outermost edge of the target blank.
[0006] To achieve this purpose, the utility model adopts the following technical solutions:
[0007] The utility model provides a target material structure, the target material structure includes the target blank and the substrate which are arranged in layers, the target blank is divided into the first layer target blank and the second layer target blank along the thickness direction, the second layer target blank is connected with the substrate, the surface edge of the first layer target blank away from the second layer target blank is designed as a bevel, the side surface of the second layer target blank is perpendicular to the bottom surface, and the low end edge of the bevel is connected to the upper edge of the side surface of the second layer target blank through a round chamfer.
[0008] In the target blank of the utility model, the side surface and the bottom surface of the second layer target blank are limited to be vertical, thereby avoiding the appearance of sharp corners at the outermost edge of the target blank, and further avoiding the corner collapse and slagging of the outermost edge of the target blank.
[0009] Preferably, the substrate is divided into a first layer substrate and a second layer substrate along the thickness direction, the top surface of the first layer substrate is in contact with the bottom surface of the second layer target blank, and the side surface of the first layer substrate is perpendicular to the top surface.
[0010] Preferably, the top surface of the first layer substrate is coincident with the bottom surface of the second layer target blank.
[0011] Preferably, the part of the side surface of the second layer substrate close to the first layer substrate is recessed inward to form a curved surface, and the upper edge of the curved surface is connected to the lower edge of the side surface of the first layer substrate through a round chamfer.
[0012] Preferably, the included angle between the inclined surface of the first layer target blank and the horizontal plane is 10°-80°.
[0013] Preferably, the R angle of the round chamfer in the target blank is 1mm-1.5mm.
[0014] Preferably, the total thickness of the first layer target blank and the second layer target blank is 7mm-7.5mm.
[0015] Preferably, the thickness of the second layer target blank is 0.5mm-1.5mm.
[0016] Preferably, the total thickness of the first layer substrate and the second layer substrate is 1mm-10mm.
[0017] Preferably, the thickness of the first layer substrate is 0.5mm-1.5mm.
[0018] Compared with the prior art, the target blank has the beneficial effects that:
[0019] In the target blank, the side surface of the second layer target blank is perpendicular to the bottom surface, so that the sharp corner at the outermost edge of the target blank is avoided, and the collapse and slagging of the outermost edge of the target blank are avoided. BRIEF DESCRIPTION OF DRAWINGS
[0020] Figure 1 The schematic diagram of the target material structure provided in the specific embodiment of the utility model.
[0021] Figure 2 The enlarged schematic diagram of region I in Figure 1
[0022] Figure 3 The enlarged schematic diagram of region II in Figure 2
[0023] Figure 4 The schematic diagram of the target material structure provided in the comparative example of the utility model.
[0024] Figure 5 The schematic diagram of the target material structure provided in the comparative example of the utility model.Figure 4 an enlarged schematic view of region III in FIG.
[0025] Figure 6 is Figure 5 an enlarged schematic view of region IV in FIG.
[0026] wherein, 1-target blank; 11-first layer target blank; 12-second layer target blank; 2-substrate; 21-first layer substrate; 22-second layer substrate. DETAILED DESCRIPTION
[0027] It should be understood that, in the description of the present application, the terms "center", "longitudinal", "transverse", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present application. In addition, the terms "first", "second" and the like are only for the purpose of description and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Therefore, the features defined with "first", "second" and the like can explicitly or implicitly include one or more of the features. In the description of the present application, unless otherwise specified, the meaning of "a plurality of" is two or more.
[0028] It should be noted that, in the description of the present application, unless otherwise specified and limited, the terms "provided", "connected", "connected" should be understood broadly, for example, it can be fixedly connected, or it can be detachably connected, or integrally connected; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium, or it can be the communication between two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood through specific circumstances.
[0029] The technical solutions of the present application will be further described below in conjunction with the drawings and through specific embodiments.
[0030] In one embodiment, the present application provides a target structure, such as Figure 1 , Figure 2 and Figure 3As shown, the target structure comprises a target blank 1 and a substrate 2 arranged in a stack; the target blank 1 is divided into a first layer target blank 11 and a second layer target blank 12 along the thickness direction, the second layer target blank 12 is connected with the substrate 2; the surface edge of the first layer target blank 11 away from the second layer target blank 12 is provided as an inclined surface; the side surface of the second layer target blank 12 is perpendicular to the bottom surface; the low end edge of the inclined surface is connected with the upper edge of the side surface of the second layer target blank 12 through a round chamfer transition connection.
[0031] In the target blank 1 of the utility model, the side surface of the second layer target blank 12 is perpendicular to the bottom surface, so that the sharp corner at the outermost edge of the target blank 1 is avoided, and then the collapse and slagging of the outermost edge of the target blank 1 can be avoided.
[0032] In an embodiment, the substrate 2 is divided into a first layer substrate 21 and a second layer substrate 22 along the thickness direction, the top surface of the first layer substrate 21 is connected with the bottom surface of the second layer target blank 12; the side surface of the first layer substrate 21 is perpendicular to the top surface.
[0033] The utility model limits the side surface of the first layer substrate 21 to be perpendicular to the top surface, so that the contact area of the substrate 2 and the target blank 1 can be increased.
[0034] In an embodiment, the top surface of the first layer substrate 21 is coincident with the bottom surface of the second layer target blank 12.
[0035] In an embodiment, the part of the side surface of the second layer substrate 22 close to the first layer substrate 21 is recessed inward to form an arc surface, and the upper edge of the arc surface is connected with the lower edge of the side surface of the first layer substrate 21 through a round chamfer transition connection.
[0036] In an embodiment, the side surface of the second layer substrate 22 is divided into a first part and a second part along the thickness direction, the first part is recessed inward to form an arc surface, and the upper edge of the arc surface is connected with the lower edge of the side surface of the first layer substrate 21 through a round chamfer transition connection; the second part is a vertical surface, and the edge of the area surrounded by the second part exceeds the edge of the area surrounded by the first part.
[0037] The second layer substrate 22 of the utility model has a stepped structure.
[0038] In an embodiment, the angle between the inclined surface of the first layer target blank 11 and the horizontal plane is 10°-80°, for example, it can be 10°, 20°, 30°, 40°, 50°, 60°, 70° or 80°, but is not limited to the listed values, and other values not listed in the range are also applicable.
[0039] In an embodiment, the R angle of the round chamfer in the target blank 1 is 1mm-1.5mm, for example, can be 1mm, 1.1mm, 1.2mm, 1.3mm, 1.4mm or 1.5mm, etc., but not limited to the listed values, other values not listed in the range are also applicable.
[0040] The R angle of the conventional target blank 1 round chamfer is 2mm-2.5mm, the R angle of the side of the target blank 1 is changed to 1mm-1.5mm in the utility model, which can increase the edge thickness of the target blank 1.
[0041] In an embodiment, the total thickness of the first layer target blank 11 and the second layer target blank 12 is 7mm-7.5mm, for example, can be 7mm, 7.1mm, 7.2mm, 7.3mm, 7.4mm or 7.5mm, etc., but not limited to the listed values, other values not listed in the range are also applicable.
[0042] The thickness of the conventional target blank 1 is 6mm-6.5mm, the target blank 1 is thickened to 7mm-7.5mm in the utility model, further increasing the edge thickness of the target blank 1.
[0043] In an embodiment, the thickness of the second layer target blank 12 is 0.5mm-1.5mm, for example, can be 0.5mm, 0.6mm, 0.7mm, 0.8mm, 0.9mm, 1.0mm, 1.1mm, 1.2mm, 1.3mm, 1.4mm or 1.5mm, etc., but not limited to the listed values, other values not listed in the range are also applicable.
[0044] The thickness of the second layer target blank 12 in the utility model is the thickened part.
[0045] In an embodiment, the total thickness of the first layer substrate 21 and the second layer substrate 22 is 1mm-10mm, for example, can be 1mm, 2mm, 3mm, 4mm, 5mm, 6mm, 7mm, 8mm, 9mm or 10mm, etc., but not limited to the listed values, other values not listed in the range are also applicable.
[0046] In the utility model, in order not to affect the installation performance of the target material, the total thickness of the substrate 2 is correspondingly thinned by 1mm, so that the total height of the target material remains unchanged.
[0047] In one embodiment, the first layer substrate 21 has a thickness of 0.5mm-1.5mm, for example, it can be 0.5mm, 0.6mm, 0.7mm, 0.8mm, 0.9mm, 1.0mm, 1.1mm, 1.2mm, 1.3mm, 1.4mm or 1.5mm, etc., but not limited to the listed values, other unlisted values within the range are also applicable.
[0048] Embodiment 1
[0049] This embodiment provides a target structure, as shown in Figure 1 , Figure 2 and Figure 3 , the target structure comprises a target blank 1 and a substrate 2 which are stacked and welded together, the material of the target blank 1 is tungsten-silicon alloy, and the thickness of the target blank 1 is 7.5mm; the material of the substrate 2 is copper, and the thickness of the substrate 2 is 4mm.
[0050] The target blank 1 is divided into a first layer target blank 11 and a second layer target blank 12 along the thickness direction, the thickness of the second layer target blank 12 is 1mm, and the second layer target blank 12 is connected with the substrate 2; the surface edge of the first layer target blank 11 away from the second layer target blank 12 is provided with an inclined surface, and the angle between the inclined surface and the horizontal plane is 20°; the side surface of the second layer target blank 12 is perpendicular to the bottom surface; the low end edge of the inclined surface and the upper edge of the side surface of the second layer target blank 12 are connected through a round chamfer with an R angle of 1mm.
[0051] The substrate 2 is divided into a first layer substrate 21 and a second layer substrate 22 along the thickness direction, the thickness of the first layer substrate 21 is 0.5mm, and the top surface of the first layer substrate 21 is connected with and coincides with the bottom surface of the second layer target blank 12; the side surface of the first layer substrate 21 is perpendicular to the top surface; the second layer substrate 22 has a stepped structure, the side surface thereof is divided into a first part and a second part along the thickness direction, the first part is inwardly recessed to form a curved surface, the upper edge of the curved surface is connected with the lower edge of the side surface of the first layer substrate 21 through a round chamfer; the second part is a vertical surface, and the area surrounded by the second part exceeds the area surrounded by the first part.
[0052] Embodiment 2
[0053] This embodiment provides a target structure, as shown in Figure 1 , Figure 2 and Figure 3 , the target structure comprises a target blank 1 and a substrate 2 which are stacked and welded together, the material of the target blank 1 is tungsten-silicon alloy, and the thickness of the target blank 1 is 7.2mm; the material of the substrate 2 is copper, and the thickness of the substrate 2 is 4.3mm.
[0054] The target blank 1 is divided into a first layer target blank 11 and a second layer target blank 12 along the thickness direction, the thickness of the second layer target blank 12 is 0.8mm, and the second layer target blank 12 is connected with the substrate 2; the surface edge of the first layer target blank 11 away from the second layer target blank 12 is provided with an inclined surface, the angle between the inclined surface and the horizontal plane is 30°; the side surface of the second layer target blank 12 is perpendicular to the bottom surface; the low end edge of the inclined surface is connected with the upper edge of the side surface of the second layer target blank 12 through a round chamfer transition, and the R angle of the round chamfer is 1.2mm.
[0055] The substrate 2 is divided into a first layer substrate 21 and a second layer substrate 22 along the thickness direction, the thickness of the first layer substrate 21 is 0.5mm, the top surface of the first layer substrate 21 is connected with and coincides with the bottom surface of the second layer target blank 12; the side surface of the first layer substrate 21 is perpendicular to the top surface; the second layer substrate 22 has a stepped structure, the side surface thereof is divided into a first part and a second part along the thickness direction, the first part is recessed inward to form a curved surface, the upper edge of the curved surface is connected with the lower edge of the side surface of the first layer substrate 21 through a round chamfer transition; the second part is a vertical surface, and the area surrounded by the second part exceeds the area surrounded by the first part.
[0056] Embodiment 3
[0057] The embodiment provides a target structure, as shown in Figure 1 、 Figure 2 and Figure 3 , the target structure comprises a target blank 1 and a substrate 2 which are arranged in a stacked manner and are connected by welding, the material of the target blank 1 is tungsten-silicon alloy, and the thickness of the target blank 1 is 7mm; the material of the substrate 2 is copper, and the thickness of the substrate 2 is 4.5mm.
[0058] The target blank 1 is divided into a first layer target blank 11 and a second layer target blank 12 along the thickness direction, the thickness of the second layer target blank 12 is 1mm, and the second layer target blank 12 is connected with the substrate 2; the surface edge of the first layer target blank 11 away from the second layer target blank 12 is provided with an inclined surface, the angle between the inclined surface and the horizontal plane is 40°; the side surface of the second layer target blank 12 is perpendicular to the bottom surface; the low end edge of the inclined surface is connected with the upper edge of the side surface of the second layer target blank 12 through a round chamfer transition, and the R angle of the round chamfer is 1.5mm.
[0059] The substrate 2 is divided into a first layer substrate 21 and a second layer substrate 22 along the thickness direction, the thickness of the first layer substrate 21 is 1mm, the top surface of the first layer substrate 21 is connected with and coincides with the bottom surface of the second layer target blank 12, the side surface of the first layer substrate 21 is perpendicular to the top surface, the second layer substrate 22 has a stepped structure, the side surface of the second layer substrate 22 is divided into a first part and a second part along the thickness direction, the first part is inwardly recessed to form a curved surface, the upper edge of the curved surface is connected with the lower edge of the side surface of the first layer substrate 21 through a round chamfer transition, and the second part is a vertical surface, and the edge of the area surrounded by the second part exceeds the edge of the area surrounded by the first part.
[0060] Comparative Example 1
[0061] The present comparative example provides a target material structure, as shown in Figure 4 、 Figure 5 and Figure 6 , the target material structure comprises a target blank 1 and a substrate 2 which are arranged in a laminated manner and are connected through welding, the material of the target blank 1 is tungsten-silicon alloy, and the thickness of the target blank 1 is 6.5mm; the material of the substrate 2 is copper, and the thickness of the substrate 2 is 5mm.
[0062] The edge of the target blank 1 is provided with a bevel, the included angle between the bevel and the horizontal plane is 20°, and the low end edge of the bevel is provided with a round chamfer with an R angle of 2mm.
[0063] The top surface of the substrate 2 is smaller than the bottom surface in size, and the edge of the top surface does not exceed the edge of the bottom surface; the top surface of the substrate 2 is connected with the bottom surface of the target blank 1 and is completely the same in size; the substrate 2 has a stepped structure, the side surface of the substrate 2 is divided into a first part and a second part along the thickness direction, the first part is inwardly recessed to form a curved surface; the second part is a vertical surface, and the edge of the area surrounded by the second part exceeds the edge of the area surrounded by the first part.
[0064] In the conventional target material structure provided by Comparative Example 1, the outermost edge of the target blank 1 is prone to corner collapse and slag drop (as shown in Figure 6 ); while in the target material structure limited by Embodiments 1-3 of the present application, the side surface of the second layer target blank 12 is perpendicular to the bottom surface, and the side surface of the first layer substrate 21 is perpendicular to the top surface, and the second layer target blank 12 and the first layer substrate 21 both have a certain thickness, so as to avoid the occurrence of sharp corners at the outermost edge of the target blank 1, and further avoid the corner collapse and slag drop (as shown in Figure 3 ) of the outermost edge of the target blank 1. Moreover, compared with the target material structure provided by Comparative Example 1, the angle of the bevel in the target blank 1, the shape and size of the stepped surface of the substrate 2, and the diameter of the target blank 1 and the substrate 2 can remain unchanged, so as not to affect the installation performance of the target material.
[0065] The above merely describes a specific implementation of the present application, but the protection scope of the present application is not limited thereto, and those skilled in the art should understand that any changes or replacements that can be easily thought of by any person skilled in the art within the technical scope disclosed by the present application all fall within the protection scope and disclosure scope of the present application.
Claims
1. A target structure, characterized in that, The target structure comprises a target blank and a substrate arranged in a stack; The target blank is divided into a first layer target blank and a second layer target blank along a thickness direction, and the second layer target blank is connected with the substrate; A surface edge of the first layer target blank away from the second layer target blank is provided as an inclined surface; a side surface of the second layer target blank is perpendicular to a bottom surface; and a low end edge of the inclined surface is connected with an upper edge of the side surface of the second layer target blank through a round chamfer.
2. The target structure of claim 1, wherein The substrate is divided into a first layer substrate and a second layer substrate along a thickness direction, and a top surface of the first layer substrate is connected with a bottom surface of the second layer target blank; and a side surface of the first layer substrate is perpendicular to the top surface.
3. The target structure of claim 2, wherein, The top surface of the first layer substrate is coincident with the bottom surface of the second layer target blank.
4. The target structure according to claim 2 or 3, characterized in that A part of a side surface of the second layer substrate close to the first layer substrate is recessed inward to form a curved surface, and an upper edge of the curved surface is connected with a lower edge of the side surface of the first layer substrate through a round chamfer.
5. The target structure of claim 1, wherein An included angle between the inclined surface of the first layer target blank and a horizontal plane is 10°-80°.
6. The target structure of claim 1, wherein, An R angle of the round chamfer in the target blank is 1 mm-1.5 mm.
7. The target structure of claim 1, wherein A total thickness of the first layer target blank and the second layer target blank is 7 mm-7.5 mm.
8. The target structure of claim 1, wherein, A thickness of the second layer target blank is 0.5 mm-1.5 mm.
9. The target structure of claim 2, wherein, A total thickness of the first layer substrate and the second layer substrate is 1 mm-10 mm.
10. The target structure according to claim 2 or 9, wherein A thickness of the first layer substrate is 0.5 mm-1.5 mm.