Device for improving siliconizing of reactive sintering silicon carbide

Abstract

The utility model belongs to the technical field of siliconizing tools, and particularly relates to a device for improving reactive sintering silicon carbide siliconizing, which comprises a tool main body, an upper silicon melting area and a lower silicon melting area are arranged in the tool main body, a reaction area is arranged between the upper silicon melting area and the lower silicon melting area, a sample is arranged in the reaction area, and the upper silicon melting area is connected with the lower silicon melting area. An exhaust hole penetrating through the outside is formed in the side wall of the reaction area, so that silicon steam in the upper silicon melting area flows through the upper side of a sample and then is exhausted from the exhaust hole, and silicon steam in the lower silicon melting area flows through the lower side of the sample and then is exhausted from the exhaust hole; the device for improving siliconizing of reactive sintering silicon carbide can ensure that silicon steam passes through the upper surface and the lower surface of a workpiece, and the uniformity of the siliconizing process is greatly improved.

Description

TECHNICAL FIELD

[0001] The utility model relates to siliconizing tool technical field especially relates to an improve reaction sintered silicon carbide siliconizing device. BACKGROUND

[0002] In prior art, the tool generally includes a reaction chamber, a support platform is arranged on the inner wall of the reaction chamber, a support plate is placed on the support platform, the support plate divides the inner cavity of the reaction chamber into a lower molten silicon area and an upper reaction area, a reaction chamber top cover is arranged on the top of the reaction chamber; a plurality of silicon vapor channels are uniformly arranged on the support plate; the silicon vapor reacted in the molten silicon area enters the upper reaction area and reacts with the sample, however, due to the absence of exhaust holes, the flowability of the internal silicon vapor is not high, which can easily cause the silicon vapor to continuously flow upwards, resulting in that the silicon atmosphere concentration at the top is much higher than that at the bottom, thus the siliconizing degree of the upper side and the siliconizing degree of the lower side are not uniform during the siliconizing process of the sample. SUMMARY

[0003] The utility model provides a kind of improve reaction sintered silicon carbide siliconizing device, solve the problem that the siliconizing degree of the upper side and the siliconizing degree of the lower side are not uniform in prior art due to sample in the process of siliconizing.

[0004] The utility model provides the following technical scheme:

[0005] An improve reaction sintered silicon carbide siliconizing device, including tool main part, the tool main part inside is provided with upper molten silicon area, lower molten silicon area, and it is reaction area between upper molten silicon area, lower molten silicon area, the reaction area is provided with sample, the reaction area side wall is equipped with the exhaust hole that passes through outside, to make the silicon vapor of upper molten silicon area flow from sample upper side and then discharge from exhaust hole, the silicon vapor of lower molten silicon area flow from sample lower side and then discharge from exhaust hole.

[0006] In a possible implementation, the tool main part top is left with feed inlet, and the feed inlet is equipped with sealing tool cover.

[0007] In a possible implementation, the upper molten silicon area includes upper distributor arranged on the inner wall of the tool main part, and silicon powder is arranged in the upper distributor.

[0008] In a possible implementation, a support ring is arranged on the upper inner wall of the tool main part, and the upper distributor is placed on the support ring.

[0009] In a possible implementation, the upper distributor includes an annular distribution groove, and the silicon powder is arranged in the annular distribution groove.

[0010] In a possible implementation, the middle part of the annular distribution groove is provided with a middle pass, and the middle pass is provided with a uniform distribution plate, and the uniform distribution plate is provided with uniform distribution holes.

[0011] In a possible implementation, the lower silicon melting area comprises a lower distributor arranged on the bottom plate of the tool body, and the lower distributor is provided with silicon powder.

[0012] In a possible implementation, the bottom plate of the tool body is provided with a material rack, and the material rack is provided with a sample between the annular distribution groove and the lower distributor.

[0013] In a possible implementation, the tool body, the tool cover, the uniform distribution plate, the upper distributor and the lower distributor are all isostatic pressing graphite, and the surfaces are provided with silicon carbide coatings.

[0014] It should be understood that the above general description and the following detailed description are only exemplary and do not limit the utility model.

[0015] The device for improving the silicon infiltration of reaction sintered silicon carbide provided by the application can ensure that the upper and lower surfaces of the workpiece are both passed through by silicon vapor, greatly improving the uniformity of the silicon infiltration process.

[0016] By arranging the uniform distribution plate, when the silicon vapor generated by the silicon powder in the annular distribution groove first fills the upper space and then flows downward, the silicon vapor can be uniformly distributed by passing through the uniform distribution plate, so that the silicon vapor passing through the uniform distribution holes flows downward uniformly.

[0017] By arranging the support ring, the upper distributor can be conveniently placed on the support ring. BRIEF DESCRIPTION OF DRAWINGS

[0018] Figure 1 The three-dimensional structure schematic diagram of the device for improving the silicon infiltration of reaction sintered silicon carbide provided by the embodiment of the utility model;

[0019] Figure 2 The explosion structure schematic diagram of the device for improving the silicon infiltration of reaction sintered silicon carbide provided by the embodiment of the utility model;

[0020] Figure 3 The upper distributor and the uniform distribution plate structure schematic diagram of the device for improving the silicon infiltration of reaction sintered silicon carbide provided by the embodiment of the utility model;

[0021] Figure 4 The internal structure schematic diagram of the device for improving the silicon infiltration of reaction sintered silicon carbide provided by the embodiment of the utility model.

[0022] REFERENCE SIGNS:

[0023] 1, tool body; 2, tool cover; 3, exhaust hole; 4, sealing extension ring; 5, uniform distribution plate; 6, uniform distribution hole; 7, upper distributor; 8, annular distribution groove; 9, support ring plate; 10, middle pass; 11, sample; 12, material rack; 13, lower distributor; 14, sealing groove; 15, support ring. DETAILED DESCRIPTION

[0024] The embodiments of the present application will be described below with reference to the drawings in the embodiments of the present application.

[0025] Since the reaction sintered silicon carbide ceramic material has the characteristics of thermal shock resistance, high temperature resistance, wear resistance, thermal shock resistance, high thermal conductivity, high hardness, oxidation resistance and chemical corrosion resistance, and has the advantages of simple pressureless sintering and hot pressing process equipment, short sintering time, low sintering temperature, low cost and small shrinkage rate (<1%) net size sintering, etc., which makes RBSiC realize large-scale industrial production, and has been widely used in various fields under severe conditions of high temperature, high pressure, corrosion, radiation, etc. The basic principle of reaction sintering silicon carbide ceramic is that under the action of capillary force, liquid phase silicon or silicon alloy or gaseous silicon with reaction activity penetrates into porous ceramic green body containing carbon, and reacts with carbon to generate silicon carbide, and the newly generated beta-silicon carbide is combined with the original alpha-silicon carbide particles in the green body, and the excess silicon filler is filled in the remaining pores of the green body, and the densification process is completed. The final phase of reaction sintered silicon carbide is mainly composed of silicon carbide grains and free silicon, and contains a small amount of free carbon.

[0026] In the prior art, the tool generally includes a reaction chamber, a support platform is arranged on the inner wall of the reaction chamber, a support plate is placed on the support platform, the support plate divides the inner cavity of the reaction chamber into a lower molten silicon area and an upper reaction area, and a reaction chamber top cover is arranged at the top of the reaction chamber; a plurality of silicon vapor channels are uniformly arranged on the support plate; the silicon vapor generated by the reaction in the molten silicon area enters the upper reaction area and reacts with the sample 11. However, since there is no exhaust hole, the flowability of the internal silicon vapor is not high, which can easily cause the silicon vapor to continuously flow upward, resulting in that the silicon atmosphere concentration at the top is much higher than that at the bottom. Therefore, during the silicon infiltration process of the sample 11, the silicon infiltration degree on the upper side and the silicon infiltration degree on the lower side are not uniform.

[0027] Therefore, the present application provides a device for improving the silicon infiltration of reaction sintered silicon carbide, which can effectively improve the process of infiltrating the porous ceramic green body containing carbon under the action of capillary force during the preparation of reaction sintered silicon carbide ceramic, and can effectively improve the uniformity of silicon infiltration.

[0028] The utility model provides an improved reaction sintered silicon carbide siliconizing device, which comprises a tool main body 1, an upper molten silicon area and a lower molten silicon area are arranged inside the tool main body 1, and a reaction area is arranged between the upper molten silicon area and the lower molten silicon area. The specific structure of the upper molten silicon area and the lower molten silicon area can not be limited, and can be a plurality of cylinders, boxes or other structures capable of placing silicon powder. The installation method can also be various. When the tool main body 1 is heated, the silicon powder in the upper molten silicon area and the lower molten silicon area generates silicon vapor after being heated. A sample 11 is arranged in the reaction area, and an exhaust hole 3 penetrating the outside is arranged on the side wall of the reaction area, so that the silicon vapor in the upper molten silicon area flows from the upper side of the sample 11 and is discharged from the exhaust hole 3, and the silicon vapor in the lower molten silicon area flows from the lower side of the sample 11 and is discharged from the exhaust hole 3. After the silicon vapor is generated from the upper molten silicon area, it flows along the upper part of the reaction area, passes through the upper side of the sample 11, and is then discharged through the exhaust hole 3. This flow path ensures that the upper surface of the sample 11 can fully contact the silicon vapor to realize siliconizing treatment of the upper surface. After the silicon vapor is generated from the lower molten silicon area, it flows along the lower part of the reaction area, passes through the lower side of the sample 11, and is also discharged through the exhaust hole 3. This flow path ensures that the lower surface of the sample 11 can also fully contact the silicon vapor to realize siliconizing treatment of the lower surface.

[0029] In summary, the improved reaction sintered silicon carbide siliconizing device provided by the utility model can ensure that the upper and lower surfaces of the workpiece are passed through by silicon vapor, greatly improving the uniformity of the siliconizing process.

[0030] Further, the tool main body 1 has a feed inlet at the top, and the feed inlet is provided with a sealing tool cover 2. By arranging the feed inlet, the internal materials can be conveniently taken out and placed, and by arranging the tool cover 2, a sealing structure is formed at the top, so that the generated silicon vapor can only be discharged from the exhaust hole 3 of the reaction area.

[0031] Specifically, as shown in Figures 1-2 , Figure 4 The lower side of the tool cover 2 is provided with a sealing extension ring 4 extending downward, and the upper part of the tool main body 1 is provided with a sealing groove 14 matched therewith. When the tool cover 2 is folded with the tool main body 1, the sealing extension ring 4 can form a sealing fit with the sealing groove 14.

[0032] Further, the upper silicon melting area includes an upper distributor 7 arranged on the inner wall of the tool main body 1. The shape and structure of the upper distributor 7 are not limited, which can be an entire annular groove, or multiple arc grooves, circular grooves, polygonal grooves, etc. The connection mode of the upper distributor 7 and the inner wall of the tool main body 1 is not limited, which can be fixed connection, or a placing structure arranged on the inner wall of the tool main body 1, etc. The upper distributor 7 is internally provided with silicon powder. When the tool main body 1 is heated, the silicon powder in the upper distributor 7 generates silicon vapor. Since the upper part is sealed by the tool cover body 2, the silicon vapor generated in the upper distributor 7 flows from top to bottom through the upper side of the sample 11 and then flows out of the exhaust hole 3, so that the upper part of the sample 11 can be uniformly contacted with the silicon vapor.

[0033] Further, the upper part of the inner wall of the tool main body 1 is provided with a support ring 15, and the upper distributor 7 is placed on the support ring 15. By arranging the support ring 15, the upper distributor 7 can be conveniently placed on the support ring 15.

[0034] Specifically, as shown in Figure 2 and Figure 4 , the upper part of the inner wall of the tool main body 1 is integrally formed with a circular ring type support ring 15.

[0035] Further, the upper distributor 7 includes an annular distribution groove 8, and the silicon powder is arranged in the annular distribution groove 8. The upper distributor 7 is arranged in a circular ring type, and the annular distribution groove 8 is arranged. On the one hand, the silicon powder can be uniformly placed, so that the generated silicon vapor is uniformly distributed. On the other hand, the circular ring type upper distributor 7 can be limited by the inner wall of the tool main body 1, so that the upper distributor 7 can be stably placed.

[0036] Further, the middle pass 10 is left in the middle of the annular distribution groove 8, the uniform distribution plate 5 is arranged at the middle pass 10, and the uniform distribution hole 6 is arranged on the uniform distribution plate 5. By arranging the uniform distribution plate 5, when the silicon vapor generated by the silicon powder in the annular distribution groove 8 first fills the upper space and then flows downward, the silicon vapor will be uniformly distributed through the uniform distribution plate 5, so that the silicon vapor passing through the uniform distribution hole 6 flows downward uniformly.

[0037] Specifically, as shown in Figure 3 , the upper distributor 7 includes an annular distribution groove 8, and the inner wall of the annular distribution groove 8 is provided with a horizontal support ring plate 9. The middle pass 10 is left in the middle of the support ring plate 9, and the uniform distribution plate 5 is placed on the support ring plate 9.

[0038] Further, the lower silicon melting area comprises a lower distributor 13 arranged on the bottom plate of the tool body 1, and the lower distributor 13 is internally provided with silicon powder, and the shape structure of the lower distributor 13 can be arranged in multiple structures, such as polygonal box body, circular box body, etc., in the application, the lower distributor 13 is arranged in a cylindrical shape, and an opening is arranged at the top, and the cylindrical lower distributor 13 is internally provided with silicon powder, and when the tool body 1 is heated, the silicon powder in the lower distributor 13 generates silicon vapor which flows out from the upper opening, passes through the lower side of the sample 11 and then flows out from the exhaust hole 3.

[0039] Further, the tool body 1 is provided with a material rack 12 on the bottom plate, and the sample 11 is arranged on the material rack 12 and located between the annular distribution groove 8 and the lower distributor 13.

[0040] Further, the tool body 1, the tool cover 2, the uniform distribution plate 5, the upper distributor 7 and the lower distributor 13 are all isostatic pressing graphite, and are all provided with a silicon carbide coating on the surface.

[0041] In summary, by arranging the upper distributor 7 in a circular ring type and arranging the uniform distribution plate 5, on one hand, the upper distributor 7 can be conveniently and stably arranged on the supporting ring 15, and on the other hand, the generated silicon vapor can be uniformly distributed, and the uniformity of silicon infiltration of the sample 11 is further improved.

[0042] The above is only a specific implementation manner of the application, but the protection scope of the application is not limited to this, any person skilled in the art can easily think of changes or replacements within the technical range disclosed by the application, and all should be covered in the protection scope of the application; in the case of no conflict, the embodiments of the application and the features in the embodiments can be combined with each other. Therefore, the protection scope of the application should be subject to the protection scope of the claims.

Claims

1. An apparatus for improving silicon infiltration of reaction sintered silicon carbide, characterized by, The device comprises a tool body, an upper molten silicon area and a lower molten silicon area are arranged inside the tool body, a reaction area is arranged between the upper molten silicon area and the lower molten silicon area, a sample is arranged in the reaction area, and exhaust holes are arranged on the side wall of the reaction area and extend to the outside, so that the silicon vapor in the upper molten silicon area flows from the upper side of the sample and is discharged from the exhaust holes, and the silicon vapor in the lower molten silicon area flows from the lower side of the sample and is discharged from the exhaust holes.

2. The apparatus for improving silicon infiltration of reaction sintered silicon carbide according to claim 1, wherein A feeding port is arranged on the top of the tool body, and the feeding port is provided with a sealing tool cover.

3. The apparatus for improving silicon infiltration of reaction sintered silicon carbide according to claim 1, wherein The upper molten silicon area comprises an upper distributor arranged on the inner wall of the tool body, and silicon powder is arranged in the upper distributor.

4. The apparatus for improving silicon infiltration of reaction sintered silicon carbide according to claim 3, wherein A supporting ring is arranged on the upper inner wall of the tool body, and the upper distributor is placed on the supporting ring.

5. The apparatus for improving silicon infiltration of reaction sintered silicon carbide according to claim 4, wherein The upper distributor comprises an annular distribution groove, and the silicon powder is arranged in the annular distribution groove.

6. The apparatus for improving silicon infiltration of reaction sintered silicon carbide according to claim 5, wherein A middle pass-through opening is arranged in the middle of the annular distribution groove, and a uniform distribution plate is arranged at the middle pass-through opening, and uniform distribution holes are arranged on the uniform distribution plate.

7. The apparatus for improving silicon infiltration of reaction sintered silicon carbide according to claim 1, wherein The lower molten silicon area comprises a lower distributor arranged on the bottom plate of the tool body, and silicon powder is arranged in the lower distributor.

8. The apparatus for improving silicon infiltration of reaction sintered silicon carbide according to claim 7, wherein A material rack is arranged on the bottom plate of the tool body, a sample is arranged on the material rack, and the sample is located between the annular distribution groove and the lower distributor.

9. The apparatus for improving silicon infiltration of reaction sintered silicon carbide according to any one of claims 1 to 8, wherein The tool body, the tool cover, the uniform distribution plate, the upper distributor and the lower distributor are all isostatic pressing graphite, and a silicon carbide coating is arranged on the surface of each.

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