Debonding device

Abstract

The utility model discloses a de-bonding device. The de-bonding device comprises a laser source for providing an infrared laser beam for performing de-bonding through a carrier silicon wafer; the galvanometer is used for transmitting the infrared laser to the first surface of the carrier silicon wafer and irradiating a bonding layer through the carrier silicon wafer, and the galvanometer is used for de-bonding the carrier silicon wafer and a device according to a target scanning speed by adjusting the laser frequency, the device is bonded on the second surface of the carrier silicon wafer through the device, and the laser spot generated by the next pulse corresponding to the target scanning speed is next to the laser spot generated by the previous pulse and is not overlapped with the laser spot generated by the previous pulse. Through the above debonding device, nondestructive debonding can be carried out on the permanently bonded silicon wafer, so that the separated silicon wafer can be reused, subsequent processing is facilitated, the efficiency of debonding permanent bonding can be improved, and the size of the whole debonding device is reduced.

Description

TECHNICAL FIELD

[0001] The utility model relates to the technical field of semiconductor technology, specifically relates to a kind of unkeying device. BACKGROUND

[0002] In prior art, after wafer and device are permanently bonded, they are usually unkeyed in the way of mechanical glass peeling. However, when using mechanical peeling to unkey device before annealing, this method not only easily causes damage to wafer, has the risk of wafer cracking, but also causes the unkeyed wafer and device to be unable to be used after annealing.

[0003] In order to avoid the damage to the unkeyed wafer and device caused by the above mechanical method, the commonly used unkeying technology at present is ultraviolet laser unkeying technology. The wafer targeted by the ultraviolet laser unkeying technology is a glass substrate that can be penetrated by ultraviolet laser, and an organic adhesive is used to temporarily bond the wafer and the device, and then the ultraviolet laser penetrates the glass material to melt the organic adhesive, completing the unkeying process.

[0004] However, there are still not small technical limitations in using ultraviolet laser for unkeying. First, the glass substrate suitable for unkeying cannot be used for permanent bonding. Permanent bonding is performed after silicon wafer bonding, and then annealing is performed. Now it can only be unkeyed by mechanical method. However, the existing semiconductor equipment is mainly designed around silicon devices, and ultraviolet laser cannot penetrate the wafer of silicon material made of silicon material. Therefore, ultraviolet laser cannot be used to unkey permanent bonding. If ultraviolet laser must be used to unkey permanent bonding, it needs to be upgraded at a considerable cost to process glass substrate. For example, special tools are needed to process glass substrate, and the highest processing temperature needs to be 350℃, and the process conditions are strictly limited. Moreover, the organic adhesive melted by ultraviolet laser is difficult to peel off and remove from the wafer and / or device of silicon wafer, and is easy to remain, which will affect the subsequent use of the wafer and device of silicon wafer.

[0005] In order to solve the above problems existing in the prior art, there is an urgent need in the field for an unkeying technology that can unkey permanently bonded silicon wafer without damage, so that the separated silicon wafer can be reused, which is beneficial to subsequent processing, and also can improve the efficiency of unkeying permanent bonding and reduce the overall volume of unkeying equipment. UTILITY MODEL CONTENTS

[0006] The following presents a simplified summary of one or more aspects in order to provide a basic understanding of such aspects. This summary is not an extensive overview of all contemplated aspects, and is intended to neither identify key or critical elements of all aspects nor delineate the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed description that is presented later.

[0007] In order to overcome the above-mentioned defects existing in the prior art, the utility model provides a kind of unkeying device, permanent bonding can be carried out to the silicon wafer after permanent bonding, so that the silicon wafer after separation can be reused, it is beneficial to subsequent processing, it can also improve the efficiency of permanent bonding, and reduce the overall volume of unkeying equipment.

[0008] Specifically, according to the unkeying device provided by the first aspect of the utility model, it comprises: a laser source, which provides infrared laser for unkeying through the carrier silicon wafer; and a galvanometer mirror, which is used to transmit the infrared laser to the first surface of the carrier silicon wafer and irradiate the bonding layer through the carrier silicon wafer, and the galvanometer mirror is adjusted at a target scanning speed to unkey the carrier silicon wafer and the device, wherein the device is bonded to the second surface of the carrier silicon wafer via the device, and the laser spot generated by the next pulse corresponding to the target scanning speed is next to the laser spot generated by the previous pulse and does not overlap with each other.

[0009] Further, in some embodiments of the utility model, the unkeying device further comprises a field lens located at the exit end of the galvanometer mirror, which is used to receive the infrared laser emitted by the galvanometer mirror and focus it to the bonding layer.

[0010] Further, in some embodiments of the utility model, the bonding layer comprises a bonding layer made of inorganic adhesive, which is bonded to the bonding piece by molecular force.

[0011] Further, in some embodiments of the utility model, the bonding layer comprises a bonding layer made of titanium nitride adhesive.

[0012] Further, in some embodiments of the utility model, the unkeying device further comprises a beam expansion and collimation system located between the laser and the galvanometer mirror, which is used to expand the spot diameter of the infrared laser to match the spot size of the galvanometer mirror.

[0013] Further, in some embodiments of the utility model, the unkeying device further comprises a chuck assembly comprising an upper chuck and a lower chuck, which is used to obtain the carrier silicon wafer and the device after they are unkeyed respectively. BRIEF DESCRIPTION OF DRAWINGS

[0014] The above features and advantages of the present application will be better understood after reading the detailed description of embodiments of the present application in conjunction with the following drawings. In the drawings, components are not necessarily drawn to scale, and components of similar or identical function or features are designated by the same or similar reference label.

[0015] Figure 1A A flowchart of a bonding method according to some embodiments of the present application is shown;

[0016] Figure 1B For Figure 1A A structural diagram of a bonded assembly obtained by the wafer bonding method shown;

[0017] Figure 2 A structural diagram of a debonding apparatus according to some embodiments of the present application is shown; and

[0018] Figure 3 A flowchart of a debonding method according to some embodiments of the present application is shown.

[0019] Reference signs:

[0020] S110-S130 steps;

[0021] 100 bonded assembly;

[0022] 110 carrier silicon wafer;

[0023] 120 bonding layer;

[0024] 130 device;

[0025] 200 debonding apparatus;

[0026] 210 laser source;

[0027] 220 optical system;

[0028] 221 galvanometer;

[0029] 222 field lens;

[0030] 223 beam expander collimator system;

[0031] 230 chuck assembly;

[0032] 240 infrared laser; and

[0033] S310-S330 steps. DETAILED DESCRIPTION

[0034] The following describes the embodiments of the present application by specific examples, and other advantages and effects of the present application can be easily understood by those skilled in the art according to the disclosure. Although the description of the present application will be introduced in combination with the preferred embodiments, it does not mean that the features of the present application are limited to the embodiments. On the contrary, the purpose of introducing the present application in combination with the embodiments is to cover other options or modifications which can be extended based on the claims of the present application. In order to provide a deep understanding of the present application, many specific details will be included in the following description. The present application can also be implemented without using these details. In addition, in order to avoid confusion or obscure the focus of the present application, some specific details will be omitted in the description.

[0035] In the description of the present application, it should be noted that, unless otherwise explicitly specified and limited, the terms "mounting", "connection", "connecting" should be understood broadly, for example, it can be fixed connection, or detachable connection, or integrally connected; it can be mechanical connection, or electrical connection; it can be directly connected, or indirectly connected through intermediate medium, or the communication between two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0036] In addition, "up", "down", "left", "right", "top", "bottom", "horizontal", "vertical" used in the following description should be understood as the orientation shown in the paragraph and the related drawings. Such relative terms are only used for convenience of description, and do not mean that the device described should be manufactured or operated in a specific orientation, so it should not be understood as a limitation of the present application.

[0037] It can be understood that although the terms "first", "second", "third" and the like can be used herein to describe various components, regions, layers and / or parts, these components, regions, layers and / or parts should not be limited by these terms, and these terms are only used to distinguish different components, regions, layers and / or parts. Therefore, the first component, region, layer and / or part discussed below can be called the second component, region, layer and / or part without departing from some embodiments of the present application.

[0038] As mentioned above, there are still some technical limitations in using ultraviolet laser to debond. First, the glass substrate suitable for temporary bonding cannot be used for permanent bonding, which is obtained by annealing after silicon wafer bonding, and can now only be mechanically debonded. However, the existing semiconductor equipment is mainly designed for silicon devices, and the ultraviolet laser cannot penetrate the carrier of the silicon wafer made of silicon material, so the ultraviolet laser cannot be used to debond the permanent bonding. If the ultraviolet laser is used to debond the permanent bonding, a costly upgrade is required to process the glass substrate. For example, special tools are required to process the glass substrate, and the maximum processing temperature needs to be 350°C, and the process conditions are strictly limited. Moreover, the organic adhesive melted by the ultraviolet laser is difficult to peel off and remove from the carrier of the silicon wafer and / or the device after being melted, and is easy to remain, which will affect the subsequent use of the carrier of the silicon wafer and / or the device.

[0039] In order to solve the above problems existing in the prior art, the utility model provides a kind of debonding device, permanent bonding can be carried out to silicon wafer after permanent bonding, so that the silicon wafer after separation can be reused, facilitate subsequent processing, it can also improve the efficiency of permanent bonding, and reduce the overall volume of debonding equipment.

[0040] The working principle of the above debonding device will be described below in combination with some bonding methods and debonding methods. Those skilled in the art can understand that these bonding methods and debonding methods are only some non-limiting embodiments provided by the utility model, which aims to clearly show the main idea of the utility model and provide some specific schemes for the public to implement, but not to limit all working modes or all functions of the debonding device. Similarly, the debonding device is only a non-limiting embodiment provided by the utility model, and does not limit the implementation subject of each step in these bonding methods and debonding methods.

[0041] Please refer to Figure 1A and Figure 1B , Figure 1A a flowchart of a bonding method according to some embodiments of the utility model is shown, Figure 1B for Figure 1A the structure diagram of the bonded piece obtained by the bonding method shown.

[0042] As Figure 1A shown, in some embodiments of the utility model, the wafer bonding method can include the following steps. First, step S110 can be performed: obtaining a carrier silicon wafer.

[0043] Specifically, by integrating circuits on a wafer, a chip device that can realize a specific function can be formed. Since a thicker wafer device is difficult to meet the heat dissipation and packaging requirements of high-end chips, it is often necessary to thin the wafer as a device in the semiconductor field to achieve the required thickness. When the thickness of the wafer is reduced to less than 200 microns, the ultra-thin wafer becomes fragile and is prone to warping. Therefore, as shown in Figure 1B , such a relatively fragile device 130, such as an ultra-thin wafer, can be carried by a carrier silicon wafer 110 with high mechanical strength for fixing and protecting the device 130. By supporting and fixing the carrier silicon wafer 110, subsequent process treatments such as thinning and circuit processing of the device 130 can be performed.

[0044] Further, current semiconductor equipment is mainly designed around silicon devices, so silicon wafers are selected as carrier silicon wafers 110 to facilitate subsequent processing and preparation. As a precision device, semiconductors have very high purity requirements for silicon. Therefore, the carrier silicon wafer 110 can be preferably a high-purity silicon wafer made of silicon material.

[0045] Continuing as shown in Figure 1A , step S120 can be performed: preparing a bonding layer on the second surface of the carrier silicon wafer.

[0046] Specifically, as shown in Figure 1B , a layer of inorganic material can be grown on the carrier silicon wafer 110 by a plasma enhanced chemical vapor deposition (PECVD) device to prepare the bonding layer 120. Alternatively, the inorganic material used to prepare the bonding layer 120 can be titanium nitride (TiN), but the inorganic material includes but is not limited to TiN, which can be developed according to the subsequent process requirements. Compared with the commonly used organic adhesives in the art, inorganic adhesives have higher thermal stability and can be used in high-temperature and high-pressure semiconductor processing conditions and are not prone to thermal decomposition and sudden shedding during processing.

[0047] Continuing as shown in Figure 1A , step S130 can be performed: bonding the device to the second surface of the carrier silicon wafer via the bonding layer to obtain a bonded piece.

[0048] Specifically, as shown in Figure 1B , the device 130 can be bonded to the second surface of the carrier silicon wafer 110 via the bonding layer 120 to obtain a bonded piece 100.As shown, in the embodiment, an inorganic adhesive can be selected as the bonding layer 120 to bond the device 130 and the carrier silicon wafer 110, and the device 130 is bonded to the second surface (for example, the lower surface) of the carrier silicon wafer 110 to form the bonded piece 100. Since the bonding layer 120 can be directly bonded with the device 130, that is, bonded by molecular force to form Si-O bond, the bonding layer 120 will not affect the bonding effect between the device 130 and the carrier silicon wafer 110.

[0049] For the bonded piece 100 after bonding, the debonding device and the debonding method provided by another aspect of the present application can be used to debond the bonded piece 100.

[0050] Specifically, referring to Figure 2 , Figure 2 Fig. 1 shows a structure schematic diagram of a debonding device according to some embodiments of the present application.

[0051] As Figure 2 shown, in some embodiments of the present application, the debonding device 200 can include a laser source 210 and an optical system 220. The laser source 210 can provide infrared laser 240 for debonding through the carrier silicon wafer 110, and the first surface of the carrier silicon wafer 110 is the laser incidence side. The optical system 220 can transmit the infrared laser 240 to the first surface (such as the upper surface) of the carrier silicon wafer 110, and irradiate the bonding layer 120 through the carrier silicon wafer 110 to debond the carrier silicon wafer 110 and the device 130, wherein the device 130 can be bonded to the second surface (such as the lower surface) of the carrier silicon wafer 110 through the bonding layer 120.

[0052] In the embodiment, since the carrier silicon wafer 110 is made of silicon material, the conventional ultraviolet laser cannot penetrate the carrier silicon wafer 110, only the infrared laser with a wavelength greater than 1200 nm can penetrate the silicon without damage to irradiate the bonding layer 120 of the bonded piece 100. The laser source 210 emits infrared laser with a wavelength greater than 1300 nm.

[0053] Further, since the bonding layer 120 in the embodiment is made of inorganic material, when the energy density of the infrared laser 240 reaching the bonding layer 120 reaches a certain threshold, the inorganic material will form multi-photon absorption, and the lattice will absorb energy to produce oscillation to cause chemical bond rupture, thereby realizing the modification of the inorganic material of the bonding layer 120, and achieving the permanent debonding of the device 130 and the carrier silicon wafer 110 without damage. Moreover, compared with the common organic bonding layer, the bonding layer 120 made of inorganic material in the embodiment is easy to remove after being peeled off.

[0054] Continuing as Figure 2As shown, in some embodiments of this invention, the optical system 220 may include a galvanometer 221. By adjusting the laser frequency, the galvanometer 221 debonds the carrier silicon wafer 110 and the device 130 at a target scanning speed, wherein the laser spot generated by the next pulse corresponding to the target scanning speed is adjacent to the laser spot generated by the previous pulse and they do not overlap.

[0055] Specifically, the galvanometer 221 may include a first reflecting mirror and a second reflecting mirror, and the two reflecting mirrors are respectively mounted on two corresponding rotating axes. Figure 2 (Not shown in the diagram) The two rotating shafts can be driven by two motors respectively. The working principle of the galvanometer 221 is as follows: infrared laser 240 is incident on the two mirrors, and then the reflection angle of the two mirrors is controlled by their respective motors, so that the infrared laser 240 reflected by the two mirrors can perform linear scanning along the X and Y axes respectively, thereby achieving the deflection of the infrared laser 240, so that the infrared laser 240 with a certain power density is reflected to any point on the bonding layer 120 (i.e., the target area). In other words, by vibrating the galvanometer 221, the direction and angle of the incident infrared laser 240 can be changed, so that the infrared laser 240 irradiating the bonding layer 120 can move and scan in the X and Y directions, thereby achieving complete debonding of the carrier silicon wafer 110 and the device 130.

[0056] Compared to the traditional method of adjusting the scanning position of the laser beam by linearly moving the wafer stage platform, firstly, the movement speed of a typical stage is far slower than that of the galvanometer 221. Therefore, using the galvanometer 221 in this embodiment can reduce the scanning radiation time of the entire wafer, thereby improving the efficiency of debonding permanent bonding. Secondly, the movement of the stage requires a large movement space. In contrast, the galvanometer 221 in this invention controls the movement position of the laser by adjusting its angle in situ. Therefore, the galvanometer itself does not have translational movement and does not require much movement space, which helps to reduce the overall size of the device.

[0057] Furthermore, in some embodiments of this invention, the target scanning speed of the galvanometer 221 can be calculated using the overlap of the laser spot and the laser frequency. The formula for calculating the target scanning speed is as follows:

[0058]

[0059] Where freq represents the laser frequency (Hz), τ represents the pulse width, v represents the target scanning speed (m / s), d represents the spot diameter (m), and a represents the overlap rate (%). The laser frequency freq and overlap rate a are adjustable variables, thus allowing for a corresponding scanning speed. Since the repetition rate of the pulsed laser determines the number of pulses it outputs per second, adjusting the laser frequency allows for adjusting the scanning speed of the galvanometer 221. This ensures that the laser spot generated by the next pulse is adjacent to the laser spot generated by the previous pulse and does not overlap, thereby accelerating the scanning speed of the bonding layer and improving debonding efficiency.

[0060] Those skilled in the art will understand that it is an ideal state for the laser spot generated by the next pulse to not overlap with the laser spot generated by the previous pulse. In the actual process of laser debonding, the laser spots generated by the preceding and following pulses can have a certain small overlap rate, for example, an overlap rate a = 10%. The smaller the overlap rate of the spots, the shorter the time required for debonding.

[0061] Optionally, the laser repetition rate can be adjustable from 100Hz to 100MHz, the output energy can be in the range of 100nJ to 1mJ, and the pulse width can be in the range of 400fs to 10ns.

[0062] like Figure 2 As shown, the optical system 220 may further include a field lens 222. The field lens 222 can receive the infrared laser 240 emitted via the galvanometer 221 and focus it onto the bonding layer 120. The function of the field lens 222 is to focus the infrared laser 240, making the laser energy more concentrated. During the process of infrared laser debonding through scanning irradiation by the galvanometer 221, the field lens 222 can keep the focused spot with very small deformation throughout the scanning range, thereby ensuring the consistency of the laser energy of the infrared laser 240 throughout the scanning range, achieving uniform debonding, and avoiding damage to the device 130 caused by excessive laser energy hitting a certain area, or incomplete peeling of the bonding layer 120 due to insufficient laser energy hitting another area.

[0063] Furthermore, in some optional embodiments, the target scanning speed selected by the galvanometer 221 can be limited by the focal length of the field lens 222. Specifically, the actual scanning speed range of the galvanometer 221 can be calculated using the focal length of the field lens 222, and the formula for calculating the actual scanning speed range is as follows:

[0064]

[0065] Wherein, f represents the actual field lens focal length, f' represents the given field lens focal length, and V represents the corresponding given scanning speed range under the given field lens focal length. The given field lens focal length and the corresponding given scanning speed range can be data provided by the manufacturer. For example, when the given field lens focal length f' is selected as 163mm, the given scanning speed range corresponding to this focal length is 5mm / s~8m / s. If the actual field lens focal length f is selected as 423mm, the actual scanning speed range of the selected galvanometer 221 can be determined by the above actual scanning speed range formula. The preset target scanning speed of the galvanometer 221 cannot exceed the above actual scanning speed range.

[0066] In the above embodiment of the present application, the target scanning speed of the galvanometer 221 can be determined by the laser frequency. In other optional embodiments, the laser repetition frequency of the laser source 210 can also be calculated according to the target scanning speed of the galvanometer 221. As long as the next pulse laser spot corresponding to the target scanning speed of the galvanometer 221 is next to the previous laser spot and does not overlap with each other when the galvanometer 221 scans and debonds, the target scanning speed of the galvanometer 221 can be determined. For example, when the galvanometer 221 performs laser debonding at a target line scanning speed v of 8m / s, according to the focused spot diameter d of 70um and the pulse width τ of 5 picoseconds, it can be determined that the laser repetition frequency of the laser source 210 can be 282KHz.

[0067] In the above embodiment of the present application, the infrared laser 240 enters the galvanometer 221 and is transmitted from the galvanometer 221 to the field lens 222. The field lens 222 can focus the infrared laser 240 on the bonding layer 120. By controlling the swing of the galvanometer 221 in the X and Y directions, the focused beam can realize scanning irradiation of the entire bonding layer 120. Through the irradiation of the infrared laser, the entire bonding layer 120 prepared from inorganic materials can be decomposed or modified, and the debonding of the bonding layer 120 can be completed.

[0068] Optionally, in other preferred embodiments, the optical system 220 can further include a beam expansion collimation system 223 for improving the spatial divergence angle of the infrared laser 240 and improving the collimation of the beam, so that the laser beam meets the aperture requirements of the subsequent optical components. In the present embodiment, the beam expansion collimation system 223 can be located between the laser source 210 and the galvanometer 221. The infrared laser 240 emitted from the laser source 210 passes through the beam expansion collimation system 223, which compresses the divergence angle and increases the beam waist radius, thereby expanding the spot size of the infrared laser 240 to match the spot size of the subsequent galvanometer 221 and / or field lens 222, achieving the purpose of collimating and expanding the infrared laser 240.

[0069] Please continue as Figure 2As shown, the debonding device 200 may further include a clamping assembly 230. The clamping assembly may include an upper clamping plate and a lower clamping plate. Figure 2 (Not shown in the diagram), wherein the upper and lower clamps may be equipped with suction cup structures for adsorption and pickup. After the infrared laser 240 irradiates all target areas on the bonding layer 120, and the carrier silicon wafer 110 and device 130 are debonded, the carrier silicon wafer 110 and device 130 can be adsorbed by the upper and lower clamps respectively, completing the non-destructive separation of the two.

[0070] The following debonding method can be performed using the debonding device 200 provided above.

[0071] Next, please refer to Figure 3 , Figure 3 A flowchart of a debonding method provided according to some embodiments of the present invention is shown.

[0072] like Figure 3 As shown, in some embodiments of this utility model, the debonding method may include the following steps. First, step S310 may be performed: obtaining the bonded part prepared by the bonding method.

[0073] Specifically, it can be combined with Figure 2 It is understood that the bonding component 100 prepared by the above bonding method (including steps S110 to S130) can be obtained and flattened by the lower clamp in the clamp assembly 230, wherein the bonding component 100 may include the carrier silicon wafer 110 and the device 130.

[0074] Then, step S320 can be performed: obtaining an infrared laser for debonding through the carrier silicon wafer via a laser source in the debonding device.

[0075] Specifically, the laser source 210 can be a laser, with a suitable infrared wavelength selected, generally a wavelength greater than 1300nm, as the infrared laser 240 used to debond through the carrier silicon wafer 110.

[0076] Then, step S330 can be performed: by adjusting the laser frequency, the galvanometer in the debonding device debonds the carrier silicon wafer and the device at the target scanning speed.

[0077] Specifically, in some preferred embodiments of this utility model, before setting the target scanning speed of the galvanometer 221, the actual scanning speed range of the galvanometer 221 can be obtained based on the focal length of the field lens 222 to constrain the target scanning speed.

[0078] Specifically, the actual scanning speed range of the galvanometer 221 can be calculated using the focal length of the field lens 222. The formula for calculating the actual scanning speed range is as follows:

[0079]

[0080] wherein f represents the actual field lens focal length, f' represents the given field lens focal length, and V represents the corresponding given scanning speed range under the given field lens focal length. The given field lens focal length and the corresponding given scanning speed range can be provided by the manufacturer.

[0081] After that, since the scanning speed of the galvanometer 221 is related to the overlap rate of the laser spot and the laser frequency, and the scanning speed of the galvanometer 221 can mainly determine the time required for the entire debonding of the bonding layer 120 to be completed. Therefore, the target scanning speed of the galvanometer 221 can be calculated through the overlap rate of the laser spot and the laser frequency, and the calculation formula of the target scanning speed can be as follows:

[0082]

[0083] wherein freq represents the laser frequency (Hz), τ represents the pulse width, v represents the target scanning speed (m / s), d represents the spot diameter (m), and a represents the overlap rate (%). The laser frequency freq and the overlap rate a are adjustable variables, so that the scanning speed matched therewith can be obtained. In addition, alternatively, in some other optional embodiments, the laser frequency of the laser can also be calculated inversely according to the target scanning speed of the galvanometer 221. Therefore, the target scanning speed of the galvanometer 221 can also be preset, and then the output frequency of the corresponding laser source 210 is selected based on the target scanning speed, so that the laser spot generated by the next pulse is next to the laser spot generated by the previous pulse and does not overlap with each other, which is beneficial to speed up the scanning speed of the bonding layer, thereby improving the debonding efficiency.

[0084] As Figure 2As shown, in the process of infrared laser debonding, the optical system 220 can include a galvanometer 221, a field lens 222 and a beam expansion collimation system 223. The infrared laser 240 emitted by the laser can first pass through the beam expansion collimation system 223 to compress its divergence angle, and at the same time, as the beam waist radius increases, the spot diameter of the infrared laser 240 expands to match the spot size of the subsequent galvanometer 221 and field lens 222. The infrared laser 240 emitted from the beam expansion collimation system 223 is incident on the two mirrors in the galvanometer 221, and the reflection angles of the two mirrors are controlled by the respective motors to make the infrared laser 240 reflected by the two mirrors can be linearly scanned along the X and Y axes respectively, so as to achieve the deflection of the infrared laser 240, so that the infrared laser 240 with a certain power density is reflected to any point on the bonding layer 120 (i.e. the target area). The field lens 222 can receive the infrared laser 240 emitted by the galvanometer 221 and focus it to the bonding layer 120. Combined with the swing of the galvanometer 221 in the X and Y axes directions, the focused beam can realize scanning irradiation in the whole bonding layer 120. Through the irradiation of the infrared laser, the whole bonding layer 120 prepared by inorganic materials can be decomposed or modified, and the debonding of the bonding layer 120 is completed.

[0085] Finally, when the infrared laser 240 completes the scanning irradiation of the whole bonding layer 120, the inorganic decomposition and modification of the bonding layer 120, the carrier silicon wafer 110 and the device 130 are debonded, and the carrier silicon wafer 110 and the device 130 can be adsorbed by the upper chuck and the lower chuck respectively, and the lossless separation of the two is completed.

[0086] Although the above-described methods are illustrated and described as a series of acts for the sake of simplicity, it should be understood and appreciated that the methods are not limited by the order of acts, as some acts may, in accordance with one or more embodiments, occur in different orders and / or concurrently with other acts from that shown and described herein. And / or, depending on the embodiment, various elements of the methods could be implemented in hardware, software, or a combination of both.

[0087] In summary, the utility model provides a kind of debonding device, can be lossless to permanent bonding after silicon wafer permanent bonding, so that the silicon wafer after separation can be reused, facilitate subsequent processing, while it can also improve the efficiency of permanent bonding, and reduce the overall volume of debonding equipment.

[0088] The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be readily apparent to those skilled in the art, and the generic principles defined herein can be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples described herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A debonding apparatus, characterized by, Comprising: a laser source providing infrared laser for debonding through a carrier silicon wafer; and a galvanometer for transmitting the infrared laser to a first surface of the carrier silicon wafer and irradiating a bonding layer through the carrier silicon wafer, by adjusting a laser frequency, so that the galvanometer debonds the carrier silicon wafer and a device at a target scanning speed, wherein the device is bonded to a second surface of the carrier silicon wafer via the device, and a laser spot generated by a next pulse corresponding to the target scanning speed is next to a laser spot generated by a previous pulse and does not overlap with each other.

2. The debonding apparatus of claim 1, wherein, Further comprising a field lens located at an exit end of the galvanometer for receiving the infrared laser emitted via the galvanometer and focusing it to the bonding layer.

3. The debonding apparatus of claim 1, wherein, The bonding layer comprises a bonding layer made of an inorganic adhesive, and the device is bonded to the carrier silicon wafer via the device by molecular force.

4. The debonding apparatus of claim 3, wherein, wherein The bonding layer comprises a bonding layer made of a titanium nitride adhesive.

5. The debonding apparatus of claim 1, wherein, Further comprising a beam expansion collimation system located between the laser source and the galvanometer for expanding a spot diameter of the infrared laser so as to match a spot size of the galvanometer.

6. The debonding apparatus of claim 1, wherein, Further comprising: a chuck assembly comprising an upper chuck and a lower chuck for respectively obtaining the carrier silicon wafer and the device after they are debonded.

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