Chemical vapor deposition device

Abstract

A chemical vapor deposition device comprises: a reaction chamber comprising a reaction chamber side wall and a reaction chamber bottom wall; the base is located in the reaction cavity, the base comprises a base side wall, and a containing area is arranged between the base side wall and the reaction cavity side wall; the device is characterized in that the device further comprises an isolation plate, the isolation plate is located in the containing area and divides the containing area into an annular exhaust cavity and an annular storage space, the exhaust cavity is located between the isolation plate and the side wall of the base or the side wall of the reaction cavity, and the storage space is located between the isolation plate and the side wall of the reaction cavity or the side wall of the base; an annular first opening is formed between the upper edge of the isolation plate and the side wall of the base / the side wall of the reaction cavity, airflow enters the exhaust cavity through the first opening, and the orientation of the first opening is parallel to the side wall of the base / the side wall of the reaction cavity. According to the chemical vapor deposition device provided by the utility model, the exhaust port can be prevented from being blocked by sediments, the uniformity of airflow in the reaction cavity is improved, and meanwhile, the processing process is simple.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor equipment, and in particular to a chemical vapor deposition apparatus. Background Technology

[0002] Metal-organic chemical vapor deposition (MOCVD) is widely used in compound semiconductor deposition, such as gallium nitride (GaN) deposition, ultimately producing various epitaxial films for manufacturing LED devices, power semiconductor devices, and laser devices. The main reactant gas is trimethylgallium (TMG), which generates a large amount of particulate contaminants containing organic matter and inorganic metals during the reaction. Therefore, the exhaust system needs to be optimized to achieve three main objectives: 1. Preventing contaminants from clogging the exhaust channels; 2. Ensuring the uniformity of the gas flow distribution on the upper substrate; 3. Preventing particulate contaminants from flowing back to the upper substrate, leading to defects in semiconductor devices.

[0003] Therefore, patent CN106191809B, filed by the same applicant, raised the following... Figure 1 The technical solution shown is as follows. This solution includes a reaction chamber 100', with a gas spray head 21' at the top for air intake, and a liftable shielding cylinder 62' surrounding the gas spray head 21' within the chamber. The shielding cylinder is driven by a drive device 64', and typically has a water-cooling channel inside to cool it. At the bottom of the reaction chamber, opposite the gas spray head 21', is a base 14' for supporting the substrate 15' to be processed. Below the base is a heater 12'. Optionally, a rotary drive device 24' can be provided to support and drive the base 14'. This rotary drive device can drive a cylindrical rotating shaft at the center of the base or a rotating cylinder at the outer edge of the base. A base sidewall 16' is provided on the lower periphery of the base 14' to isolate the heater 12' inside the base sidewall 16' from the outer exhaust system. The high-speed rotating base (>1000 rpm) accelerates the airflow, which then flows towards the shielding cylinder 62'. After being refracted by the inner wall of the shielding cylinder 62', the airflow flows downward at high speed into the exhaust system below. The exhaust system includes an isolation device 139' that separates the exhaust area between the base sidewall 16' and the reaction chamber sidewall 100' into a storage chamber and an exhaust chamber distributed in an inward and outward direction. Solid contaminants fall into the storage chamber and accumulate. After the reaction, the airflow enters the exhaust chamber through the airflow opening 137', and is then discharged from the reaction chamber 100' through the exhaust pipe 138' and the downstream suction pump.

[0004] However, in the solution of patent CN106191809B, the exhaust port of the isolation device is located on the side wall, which requires additional opening operations and is more complicated to manufacture. At the same time, the horizontal or near-horizontal angle of the exhaust port still poses a risk of deposits falling in. Therefore, the industry needs to develop new exhaust systems to further improve the production efficiency and device yield of MOCVD equipment. Utility Model Content

[0005] The purpose of this invention is to provide a chemical vapor deposition device with a simple structure and better anti-clogging effect of deposits.

[0006] According to the purpose of this utility model, this utility model provides a chemical vapor deposition apparatus, comprising: a reaction chamber, the reaction chamber including a reaction chamber sidewall and a reaction chamber bottom wall; a base, located within the reaction chamber, the base including a base sidewall, and a receiving area between the base sidewall and the reaction chamber sidewall; characterized in that the apparatus further comprises: a partition plate, the partition plate being located within the receiving area and dividing the receiving area into an annular exhaust chamber and an annular storage space, the exhaust chamber being located between the partition plate and the base sidewall or the reaction chamber sidewall and communicating with an exhaust device, the storage space being located between the partition plate and the reaction chamber sidewall or the base sidewall; wherein, the upper edge of the partition plate and the base sidewall / reaction chamber sidewall have an annular first opening, gas flow enters the exhaust chamber through the first opening, and the orientation of the first opening is parallel to the base sidewall / reaction chamber sidewall.

[0007] Optionally, the inner wall of the exhaust chamber is shared with the side wall of the base, or the outer wall of the exhaust chamber is shared with the side wall of the reaction chamber.

[0008] Optionally, the upper edge of the isolation plate and the base sidewall / reaction chamber sidewall have at least one connection portion, which isolates the first opening into one or more arc shapes.

[0009] Optionally, the radial width of the first opening is less than or equal to 20 mm.

[0010] Optionally, when the first opening is located between the upper edge of the isolation plate and the sidewall of the base, the upper edge of the isolation plate is closer to the sidewall of the base than the lower edge in the radial direction of the receiving area; when the first opening is located between the upper edge of the isolation plate and the sidewall of the reaction chamber, the upper edge of the isolation plate is closer to the sidewall of the reaction chamber than the lower edge in the radial direction of the receiving area.

[0011] Optionally, the base sidewall or the reaction chamber sidewall also has a lateral extension plate that extends obliquely downward and covers the first opening in the horizontal direction.

[0012] Optionally, a second opening is provided between the upper edges of the lateral extension plate and the isolation plate, through which airflow sequentially enters the exhaust chamber.

[0013] Optionally, when the radial width of the first opening is greater than 20 mm, the orientation of the second opening is vertical or downward at an angle of less than 90 degrees to the vertical direction.

[0014] Optionally, the radial width of the second opening is less than or equal to 20 mm.

[0015] Optionally, the lateral extension plate is a straight plate or an arc-shaped plate, allowing pollutants to slide downwards.

[0016] Compared with existing technologies, the chemical vapor deposition apparatus provided by this utility model has the following advantages:

[0017] (1) The first opening of the exhaust chamber is parallel to the side wall of the base or the side wall of the reaction chamber, preferably vertically upward, and the position is far away from the area where pollutants are easy to fall, so as to prevent the sediment from clogging.

[0018] (2) The lateral extension plate covers the first opening, and a second opening is formed between the lateral extension plate and the isolation plate, which is oriented vertically or inclined downwards, so as to better prevent sediment from falling in.

[0019] (3) The radial width of the first or second opening is small, which has a choking effect and improves the uniformity of airflow in the reaction chamber.

[0020] (4) The first opening is formed by the isolation plate and the base sidewall or the reaction chamber sidewall, and the second opening is formed by the isolation plate and the lateral extension plate. Neither of them requires additional opening operations, making the processing simpler. Attached Figure Description

[0021] Figure 1 This is a schematic diagram of a chemical vapor deposition apparatus in the prior art.

[0022] Figure 2 This is a schematic diagram of the first embodiment of the chemical vapor deposition apparatus of this utility model.

[0023] Figure 3 This is a schematic diagram of the second embodiment of the chemical vapor deposition apparatus of this utility model.

[0024] Figure 4 This is a schematic diagram of the third embodiment of the chemical vapor deposition apparatus of this utility model.

[0025] Figure 5 This is a schematic diagram of the fourth embodiment of the chemical vapor deposition apparatus of this utility model.

[0026] Figure 2-5 The annotations in the accompanying drawings are explained as follows:

[0027] Chemical vapor deposition apparatus 100, 200, 300, 400

[0028] Tray 101

[0029] Rotary shaft 102

[0030] Heater 103

[0031] Gas spray head 104

[0032] First gas pipeline 105a

[0033] Second gas line 105b

[0034] First reaction gas source 106a

[0035] Second reaction gas source 106b

[0036] Coolant supply pipe 107

[0037] Coolant source 108

[0038] 109a reaction chamber liner

[0039] Lifting drive mechanism 109b

[0040] Reaction chambers 110, 210, 310, 410

[0041] Reaction chamber sidewalls 111, 211, 311, 411

[0042] The bottom wall of the reaction chamber has 112, 212, 312, and 412.

[0043] Base 120, 220, 320, 420

[0044] Base sidewalls 121, 221, 321, 421

[0045] Lateral extension plates 222, 322, 422

[0046] Separator 130, 230, 330, 430

[0047] Exhaust chambers 140, 240, 340, 440

[0048] Air extraction pipe 141

[0049] Air extraction device 142

[0050] The first opening is 143, 243, and 343.

[0051] Second opening 244, 344

[0052] Storage space 150, 250, 350, 450 Detailed Implementation

[0053] To make the objectives, technical solutions, and advantages of the embodiments of this utility model clearer, the technical solutions of the embodiments of this utility model will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this utility model, not all embodiments. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the protection scope of this utility model.

[0054] It should be noted that, in this document, the terms "comprising," "including," "having," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or terminal device that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or terminal device. Unless otherwise specified, an element defined by the phrase "comprising..." or "including..." does not exclude the presence of additional elements in the process, method, article, or terminal device that includes said element.

[0055] It should be noted that the accompanying drawings are all in a very simplified form and use non-precise ratios. In this utility model, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. They are only used to facilitate and clarify the purpose of illustrating an embodiment of this utility model.

[0056] Example 1

[0057] Figure 2 This is a schematic diagram of the first embodiment of the chemical vapor deposition apparatus of this utility model. (Reference) Figure 2 As shown, this utility model provides a chemical vapor deposition apparatus 100, which includes a reaction chamber 110 and a base 120. The reaction chamber 110 includes a reaction chamber sidewall 111 and a reaction chamber bottom wall 112. The base 120 is located inside the reaction chamber and includes a base sidewall 121. There is a certain distance between the base sidewall 121 and the reaction chamber sidewall 111, and it includes a receiving area.

[0058] Furthermore, the reaction chamber 110 includes a tray 101 on which multiple substrates to be processed are fixed. A rotating shaft 102 is located at the center of the tray 101 to drive it to rotate at high speed during the reaction. Below the tray 101 is a heater 103 to heat it to a suitable high temperature, typically around 1000 degrees Celsius, to accommodate the crystal growth of gallium nitride (GaN) materials. Opposite to the tray 101 within the reaction chamber 100 is a gas spray head 104. The gas spray head 104 includes multiple sets of mutually isolated gas inlet channels. The first set of inlet channels is connected to a first reaction gas source 106a via a first gas pipe 105a, and the second set of inlet channels is connected to a second reaction gas source 106b via a second gas pipe 105b. A third set of inlet channels can also be provided in the spray head between the first and second intermediate inlet channels to isolate different reaction gases. The lower part of the spray head 104 also includes a coolant pipeline, which is connected to the coolant source 108 through the coolant supply pipe 107. By controlling the temperature and flow rate of the coolant output from the coolant source, the spray head can be controlled to have a suitable temperature, such as 50°C.

[0059] In this embodiment, a reaction chamber liner 109a surrounds the reaction space between the spray head 104 and the lower tray 101. A lifting drive mechanism 109b is also included above the liner 109a to drive its vertical movement. When the liner 109a is in a higher position, it can shield the non-uniformity caused by the tray inlet / outlet (not shown) on the reaction chamber sidewall 111, thereby improving airflow and temperature uniformity. When the process reaction on the tray 101 is complete and the tray 101 needs to be removed, the liner 109a can move downwards so that the tray 101 passes through the tray inlet / outlet. The base sidewall 121 is located in the space below the tray and surrounds the rotation axis 102 and the heater 103, thus shielding against internal heat and external contaminants.

[0060] Furthermore, a suction pipe 141 extends outward from the bottom of the reaction chamber 110. After the reaction is completed, the by-products and waste gas are connected to the suction device 142 through the suction pipe 141, so that the by-products and waste gas are discharged from the reaction chamber 110, while controlling the airflow and pressure in the reaction chamber 110.

[0061] In this embodiment, the chemical vapor deposition apparatus 100 further includes a partition plate 130 located within the receiving area, dividing the receiving area into an exhaust chamber 140 and a storage space 150, both of which are annular in design. Specifically, in... Figure 1In the illustrated embodiment, the exhaust chamber 140 is located between the partition plate 130 and the base sidewall 121, while the storage space 150 is located between the partition plate 130 and the reaction chamber sidewall 111. Both are preferably concentric rings surrounding the base 120, and the storage space 150 is located on the periphery of the exhaust chamber 140. Furthermore, in this embodiment, the partition plate 130 serves as the outer wall of the exhaust chamber 140, while the inner wall of the exhaust chamber 140 is shared with the base sidewall 121.

[0062] In some other embodiments, the positional relationship between the storage space 150 and the exhaust chamber 140 can also be changed. That is, the exhaust chamber 140 is located between the isolation plate 130 and the reaction chamber sidewall 111, while the storage space 150 is located between the isolation plate 130 and the base sidewall 121. The exhaust chamber 130 is located on the periphery of the storage space 150, and the isolation plate 130 serves as the inner sidewall of the exhaust chamber 140. The outer sidewall of the exhaust chamber 140 is shared with the reaction chamber sidewall 111. This utility model does not impose specific limitations here.

[0063] Furthermore, in the chemical vapor deposition apparatus 100 provided by this utility model, there is an annular first opening 143 between the upper edge of the isolation plate 130 and the base sidewall 121. In actual use, the airflow will enter the annular exhaust chamber 140 through the first opening 143, and the path is as follows: Figure 2 As indicated by the dashed arrow, the air is ultimately drawn away by the suction device 142 via the suction pipe 141. Furthermore, the orientation of the first opening 143 is parallel to the side wall 121 of the base. Figure 1 In the illustrated embodiment, the first opening 143 is oriented vertically upward. It is understood that in some other embodiments of the present invention, when the exhaust chamber 140 is located between the partition plate 130 and the reaction chamber sidewall 111, the first opening 143 is located between the upper edge of the partition plate 130 and the reaction chamber sidewall 111, and the orientation of the first opening 143 is parallel to the reaction chamber sidewall 111.

[0064] It is important to emphasize that the "annular" first opening 143 mentioned above does not necessarily mean that the first opening 143 is a continuous, complete annulus. In a preferred embodiment, the partition plate 130 and the base sidewall 121 or the reaction chamber sidewall 111 (i.e., the inner or outer sidewall of the exhaust chamber 140) are not connected. A natural annulus is formed between the upper edge of the partition plate 130 and the base sidewall 121 or the reaction chamber sidewall 111. In this case, no additional opening is required to obtain the first opening 143, and the first opening 143 is a continuous annulus. However, in some other embodiments, the upper edge of the partition plate 130 and the base sidewall 121 / reaction chamber sidewall 111 may have at least one connecting portion, which isolates the first opening 143 into one or more arcs. Specifically, when there is only one connecting portion, the first opening 143 includes an arc segment. As the number of connecting portions increases, the number of arc segments also increases, but the overall shape of the first opening 143 can still be considered annular.

[0065] Furthermore, in this embodiment, the radial width of the first opening 143 is less than or equal to 20 mm, preferably 5 mm, 10 mm, or 15 mm. The isolation plate 130 in this invention is designed to prevent loose deposits generated inside the reaction chamber 110 from falling into the exhaust chamber 140. In actual production, to protect the substrate from deposits, the design of the reaction chamber 110 ensures that most deposits fall from the reaction chamber liner 109a, the reaction chamber sidewall 111, and the edge of the gas spray head 104. This embodiment achieves the effect of preventing deposits from directly falling into the exhaust chamber 140 by setting the exhaust chamber 140 close to the base sidewall 121 or the reaction chamber sidewall 111, designing the first opening 143 to be tightly attached to the base sidewall 121 or the reaction chamber sidewall 111, and controlling the size of the first opening 143. In addition, the smaller radial width of the first opening 143 can also act as a choke, effectively controlling the flow rate of gas entering the exhaust chamber 140 at the first opening 143, thereby improving the uniformity of airflow inside the reaction chamber 110 and further improving product yield.

[0066] Example 2

[0067] Figure 3 This is a schematic diagram of the second embodiment of the chemical vapor deposition apparatus of this utility model. (Reference) Figure 3As shown, the chemical vapor deposition apparatus 200 in this embodiment also includes a reaction chamber 210, a base 220, and a partition plate 230. The reaction chamber 210 includes a reaction chamber sidewall 211 and a reaction chamber bottom wall 212. The base 220 is located inside the reaction chamber 210 and includes a base sidewall 221. There is a certain distance between the base sidewall 221 and the reaction chamber sidewall 211, and the base 220 includes a receiving area. The partition plate 230 is located within the receiving area and divides the receiving area into an annular exhaust chamber 240 and an annular storage space 250. An annular first opening 243 is formed between the upper edge of the partition plate 230 and the base sidewall 221. The above-described configuration in this embodiment is the same as in Embodiment 1, and will not be repeated here.

[0068] Compared to Embodiment 1, Embodiment 2 differs in that the base sidewall 221 also has a lateral extension plate 222. The lateral extension plate 222 extends downward at an angle from the upper part of the base sidewall 221 (at least above the upper edge of the isolation plate 230) and covers the first opening 243 in the horizontal direction. A second opening 244 is also present between the upper edges of the lateral extension plate 222 and the isolation plate 230. Airflow sequentially passes through the second opening 244 and the first opening 243 into the exhaust chamber 240. The second opening 244 is oriented downward at an angle less than 90 degrees to the vertical. The lateral extension plate 222 can be a straight plate or an arc-shaped plate, allowing pollutants to slide downward. It should be noted that shapes such as concave arcs, which would obstruct the downward sliding of pollutants, are not suitable.

[0069] Specifically, in this embodiment, the lateral extension plate 222 is preferably an arc-shaped plate, specifically an upwardly convex arc-shaped plate, with an overall downward tilting trend. When a small portion of contaminants falls horizontally near the first opening, it will fall onto the lateral extension plate 222 and slide into the storage space 250. The lateral extension plate 222 further serves to prevent the first opening 243 from becoming blocked. It is understood that, to make this effect more reliable, the lateral extension plate 222 needs to completely cover the first opening 243 horizontally, and... Figure 3 In the embodiment shown, the first opening 243 is located between the upper edge of the isolation plate 230 and the base sidewall 221. At this time, the upper edge of the isolation plate 230 is closer to the base sidewall 221 than the lower edge, and the lateral extension plate 222 is also provided on the base sidewall 221.

[0070] In some other embodiments of this utility model, when the first opening 243 is located between the upper edge of the isolation plate 230 and the side wall 211 of the reaction chamber (i.e., the exhaust chamber 240 is located between the isolation plate 230 and the side wall 211 of the reaction chamber), in the radial direction of the accommodating area, the upper edge of the isolation plate 230 is closer to the side wall 211 of the reaction chamber than the lower edge. At this time, the lateral extension plate 222 is also provided on the side wall 211 of the reaction chamber, so that it can effectively cover the first opening 243 to prevent contaminants from blocking it.

[0071] Example 3

[0072] Figure 4 This is a schematic diagram of the third embodiment of the chemical vapor deposition apparatus of this utility model. (Reference) Figure 4 As shown, the chemical vapor deposition apparatus 300 in this embodiment also includes a reaction chamber 310, a base 320, and a partition plate 330. The reaction chamber 310 includes a reaction chamber sidewall 311 and a reaction chamber bottom wall 312. The base 320 is located inside the reaction chamber 310 and includes a base sidewall 321. There is a certain distance between the base sidewall 321 and the reaction chamber sidewall 311, including a receiving area. The partition plate 330 is located within the receiving area and divides the receiving area into an annular exhaust chamber 340 and an annular storage space 350. An annular first opening 343 is formed between the upper edge of the partition plate 330 and the base sidewall 321. However, it should be noted that, compared with the previous embodiments, the upper edge of the partition plate 330 in Embodiment 3 does not need to be close to the base sidewall 321 or the reaction chamber sidewall 311. That is, the radial width of the first opening 343 can be greater than 20 mm.

[0073] Meanwhile, in this embodiment, the isolation plate 330 is preferably arranged perpendicular to the bottom wall 312 of the reaction chamber, and the second opening 344 between the lateral extension plate 322 and the isolation plate 330 is preferably oriented vertically downwards. This arrangement allows the gas to enter the exhaust chamber 340 via the following path: Figure 4 As shown by the dashed arrow, it first bends downwards once to enter the second opening 344, and then bends downwards between the partition plate 330 and the lateral extension plate 322 to enter the first opening 343, forming an "S" shape.

[0074] Specifically, in this embodiment, the lateral extension plate 322 serves to prevent deposits from falling into the exhaust chamber 340. It is understood that, to make this effect more reliable, the lateral extension plate 322 also needs to completely cover the first opening 343 in the horizontal direction, and preferably also cover the upper edge of the partition plate 330 in the vertical direction. Specifically, refer to... Figure 4As shown, in the vertical direction, the lower edge of the lateral extension plate 322 is located below the upper edge of the isolation plate 330, closer to the bottom wall 312 of the reaction chamber. This arrangement ensures that the second opening 344 is ultimately vertically downward or inclined downward at an angle of less than 90 degrees to the vertical direction. It is understandable that this arrangement allows the gas flow direction to be as shown... Figure 4 The "S" shape shown is more effective at preventing deposits from entering the exhaust chamber 340 compared to lateral openings.

[0075] Furthermore, in this embodiment, the radial width of the second opening 344 is less than or equal to 20 mm, and can preferably be 5 mm, 10 mm, or 15 mm. This setting can act as a choke, effectively controlling the gas flow rate at the second opening 344, thereby improving the uniformity of airflow inside the reaction chamber 310 and further improving product yield.

[0076] Example 4

[0077] Figure 5 This is a schematic diagram of the fourth embodiment of the chemical vapor deposition apparatus of this utility model, for reference. Figure 5 As shown, the chemical vapor deposition apparatus 400 in Embodiment 4 also includes a reaction chamber 410, a base 420, and a partition plate 430. The reaction chamber 410 includes a reaction chamber sidewall 411 and a reaction chamber bottom wall 412. The base 420 is located within the reaction chamber 410 and includes a base sidewall 421. A receiving area is formed between the base sidewall 421 and the reaction chamber sidewall 411. The partition plate 430 is located within the receiving area and divides the receiving area into an annular exhaust chamber 440 and an annular storage space 450. Compared to Embodiment 3, Embodiment 4 differs only in the positions of the exhaust chamber 440, the storage space 450, and the lateral extension plate 422; the remaining identical designs will not be described again here.

[0078] Specifically, in this embodiment, the exhaust chamber 440 is located between the isolation plate 430 and the reaction chamber sidewall 411, and the outer sidewall of the exhaust chamber 440 and the reaction chamber sidewall 411 are shared. The storage space 450 is located between the isolation plate 430 and the base sidewall 421, and the lateral extension plate 422 is located on the reaction chamber sidewall 411. In this embodiment, since the storage space 450 is located near the base sidewall 421, and the storage space 450 further includes a portion near the bottom of the reaction chamber 410, the storage space 450 is larger than that in the third embodiment. This allows for a longer normal operating time after each cleaning, reduces the cleaning frequency, and improves production efficiency.

[0079] It should be understood that, when used in this specification and the appended claims, the term "comprising" indicates the presence of the described feature, integral, step, operation, element and / or component, but does not exclude the presence or addition of one or more other features, integrals, steps, operations, elements, components and / or collections thereof.

[0080] It should also be understood that the terminology used in this specification is for the purpose of describing particular embodiments only and is not intended to limit the scope of the invention. As used in this specification and the appended claims, the singular forms “a,” “an,” and “the” are intended to include the plural forms unless the context clearly indicates otherwise.

[0081] It should also be further understood that the term "and / or" as used in this specification and the appended claims refers to any combination of one or more of the associated listed items and all possible combinations, and includes such combinations.

[0082] Although the present invention has been described in detail through the preferred embodiments above, it should be understood that the above description should not be considered as a limitation of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, and not all of them. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without inventive effort are within the scope of protection of the present invention. After reading the above content, various modifications and substitutions to the present invention will be obvious to those skilled in the art. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims

1. A chemical vapor deposition apparatus, comprising: The reaction chamber includes a side wall and a bottom wall. A base, located within the reaction chamber, the base including a base sidewall, and a receiving area between the base sidewall and the reaction chamber sidewall; characterized in that the device further includes: An isolation plate is located within the accommodating area and divides the accommodating area into an annular exhaust chamber and an annular storage space. The exhaust chamber is located between the isolation plate and the sidewall of the base or the sidewall of the reaction chamber and is connected to an exhaust device. The storage space is located between the isolation plate and the sidewall of the reaction chamber or the sidewall of the base. The upper edge of the isolation plate and the base sidewall / reaction chamber sidewall have an annular first opening, through which airflow enters the exhaust chamber, and the orientation of the first opening is parallel to the base sidewall / reaction chamber sidewall.

2. The chemical vapor deposition apparatus as described in claim 1, characterized in that, The inner wall of the exhaust chamber is shared with the side wall of the base, or the outer wall of the exhaust chamber is shared with the side wall of the reaction chamber.

3. The chemical vapor deposition apparatus as described in claim 1, characterized in that, The upper edge of the isolation plate and the base sidewall / reaction chamber sidewall have at least one connection portion, which isolates the first opening into one or more arc shapes.

4. The chemical vapor deposition apparatus as described in claim 1, characterized in that, The radial width of the first opening is less than or equal to 20 mm.

5. The chemical vapor deposition apparatus as described in claim 1, characterized in that: When the first opening is located between the upper edge of the partition plate and the base sidewall, in the radial direction of the receiving area, the upper edge of the partition plate is closer to the base sidewall than the lower edge. When the first opening is located between the upper edge of the isolation plate and the sidewall of the reaction chamber, the upper edge of the isolation plate is closer to the sidewall of the reaction chamber than the lower edge in the radial direction of the accommodating area.

6. The chemical vapor deposition apparatus according to any one of claims 1 to 5, characterized in that, The base sidewall or the reaction chamber sidewall also has a lateral extension plate that extends obliquely downward and covers the first opening in the horizontal direction.

7. The chemical vapor deposition apparatus as described in claim 6, characterized in that, A second opening is also provided between the upper edges of the lateral extension plate and the isolation plate, through which airflow enters the exhaust chamber.

8. The chemical vapor deposition apparatus as described in claim 7, characterized in that, When the radial width of the first opening is greater than 20mm, the orientation of the second opening is vertical or downward at an angle of less than 90 degrees to the vertical direction.

9. The chemical vapor deposition apparatus as described in claim 8, characterized in that, The radial width of the second opening is less than or equal to 20 mm.

10. The chemical vapor deposition apparatus as described in claim 6, characterized in that, The lateral extension plate is a straight plate or an arc-shaped plate, allowing pollutants to slide downwards.

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