Driving circuit, switching system and power electronic equipment

Abstract

The utility model provides a driving circuit, a switching system and power electronic equipment, and belongs to the technical field of electronic circuits. The drive control module outputs a first conduction control signal to the first drive module or the second drive module under the action of a reference pulse width modulation signal sent by the single-chip microcomputer. The first driving module is used for outputting a second conduction control signal under the action of the first conduction control signal, and the second conduction control signal is used for driving the silicon carbide power semiconductor device to be conducted; and the second driving module is used for outputting a turn-off control signal under the action of the first turn-on control signal, so that the silicon carbide power semiconductor device is turned off under the action of the turn-off control signal. The structure of the driving circuit of the silicon carbide power semiconductor device can be simplified, the loss and time delay of the silicon carbide power semiconductor device can be reduced, and the operation safety and reliability of the silicon carbide power semiconductor device can be improved.

Description

Technical Field

[0001] This application relates to the field of electronic circuit technology, and more specifically, to a drive circuit, a switching system, and a power electronic device. Background Technology

[0002] As a key component of power electronic equipment, power semiconductor devices play a decisive role in the production cost and operating efficiency of power electronic equipment. Among them, silicon carbide power semiconductor devices are widely used in high-voltage, high-temperature, high-efficiency, and high-power-density operating scenarios due to their advantages such as high operating temperature, high operating voltage, and high switching speed.

[0003] In related technologies, the driving voltage range of silicon carbide power semiconductor devices is -5V to +25V. The driving voltage for silicon carbide power semiconductor devices to be fully turned on is about 18V. Silicon carbide power semiconductor devices have high requirements for driving voltage and require specific driving circuits to provide suitable driving voltage.

[0004] However, driving silicon carbide power semiconductor devices based on related technologies requires specific driving circuits, which significantly increases the production cost of power electronic devices. Furthermore, silicon carbide power semiconductor devices have a relatively low safety threshold, and voltage spikes in the driving circuit may break down the oxide layer between the gate and source of the device. Therefore, the related technologies suffer from complex driving circuits for silicon carbide power semiconductor devices, leading to increased production costs for power electronic devices. Utility Model Content

[0005] The purpose of this application is to provide a drive circuit, a switching system, and a power electronic device that can simplify the structure of the drive circuit of silicon carbide power semiconductor devices, reduce the loss and delay of silicon carbide power semiconductor devices, and thus improve the safety and reliability of silicon carbide power semiconductor device operation.

[0006] The embodiments of this application are implemented as follows:

[0007] A first aspect of the embodiments of this application provides a driving circuit, the driving circuit including: a driving control module, a first driving module and a second driving module;

[0008] The first terminal of the drive control module is used to connect to the reference pulse width modulation signal provided by the reference chip. The second terminal of the drive control module is used to connect to the power supply voltage. The third terminal of the drive control module is connected to the second terminal of the first drive module and the first terminal of the second drive module respectively. The fourth terminal of the drive control module and the second terminal of the second drive module are both grounded.

[0009] The first terminal of the first drive module is used to connect to the power supply voltage, and the third terminal of both the first drive module and the second drive module is used to connect to the control terminal of the silicon carbide power semiconductor device.

[0010] Under the action of the reference pulse width modulation signal, the drive control module outputs a first turn-on control signal to the first drive module or the second drive module;

[0011] The first driving module is used to output a second conduction control signal under the action of the first conduction control signal. The second conduction control signal is used to drive the silicon carbide power semiconductor device to conduct.

[0012] The second driving module is used to output a turn-off control signal under the action of the first turn-on control signal, so that the silicon carbide power semiconductor device is turned off under the action of the turn-off control signal.

[0013] As one possible implementation, the drive control module includes: a voltage divider module, a first N-type metal-oxide-semiconductor transistor, and a filter unit;

[0014] The first end of the voltage divider module is used to connect to the reference pulse width modulation signal provided by the reference chip. The second end of the voltage divider module is connected to the gate of the first N-type metal-oxide-semiconductor transistor. The third end of the voltage divider module and the source of the first N-type metal-oxide-semiconductor transistor are both grounded.

[0015] One end of the filter unit is used to connect to the power supply voltage, and the other end of the filter unit is connected to the drain of the first N-type metal oxide semiconductor transistor, the second end of the first driving module, and the first end of the second driving module, respectively.

[0016] As one possible implementation, the voltage divider module includes: a first resistor and a second resistor;

[0017] One end of the first resistor is used to connect to the reference pulse width modulation signal provided by the reference chip. The other end of the first resistor is connected to one end of the second resistor and the gate of the first N-type metal-oxide-semiconductor transistor, respectively. The other end of the second resistor is grounded.

[0018] As one possible implementation, the filter unit includes: a third resistor;

[0019] One end of the third resistor is used to connect to the power supply voltage, and the other end of the third resistor is connected to the drain of the first N-type metal-oxide-semiconductor transistor, the second end of the first driving module, and the first end of the second driving module, respectively.

[0020] As one possible implementation, the first driving module includes: a first rectifier filter unit and a P-type metal-oxide-semiconductor transistor;

[0021] The first terminal of the first rectifier and filter unit is used to connect to the power supply voltage. The first terminal of the first rectifier and filter unit is also connected to the source of the P-type metal-oxide-semiconductor transistor. The second terminal of the first rectifier and filter unit is connected to the gate of the P-type metal-oxide-semiconductor transistor. The third terminal of the first rectifier and filter unit is connected to the third terminal of the drive control module and the first terminal of the second drive module, respectively. The drain of the P-type metal-oxide-semiconductor transistor is connected to the control terminal of the silicon carbide power semiconductor device.

[0022] As one possible implementation, the first rectifier filter unit includes: a fourth resistor and a first rectifier diode;

[0023] One end of the fourth resistor is used to connect to the power supply voltage, and the other end of the fourth resistor is also connected to the source of the P-type metal-oxide-semiconductor transistor. The other end of the fourth resistor is connected to the output terminal of the first rectifier and the gate of the P-type metal-oxide-semiconductor transistor, respectively. The input terminal of the first rectifier is connected to the third terminal of the drive control module and the first terminal of the second drive module, respectively.

[0024] As one possible implementation, the second driving module includes: a second rectifier filter unit and a second N-type metal-oxide-semiconductor transistor;

[0025] The first end of the second rectifier and filter unit is connected to the third end of the drive control module and the second end of the first drive module, respectively. The second end of the second rectifier and filter unit is connected to the gate of the second N-type metal oxide semiconductor transistor. The drain of the second N-type metal oxide semiconductor transistor is connected to the control terminal of the silicon carbide power semiconductor device. The third end of the second rectifier and filter unit and the source of the second N-type metal oxide semiconductor transistor are both grounded.

[0026] As one possible implementation, the second rectifier filter unit includes: a fifth resistor and a second rectifier diode;

[0027] The output terminal of the second rectifier is connected to the third terminal of the drive control module and the second terminal of the first drive module, respectively. The input terminal of the second rectifier is connected to one end of the fifth resistor and the gate of the second N-type metal-oxide-semiconductor transistor, respectively. The other end of the fifth resistor is grounded.

[0028] A second aspect of this application provides a switching system, which includes: the driving circuit, reference chip, and silicon carbide power semiconductor device described in the first aspect above.

[0029] The input terminal of the drive circuit is used to receive the reference pulse width modulation signal provided by the reference chip, and the output terminal of the drive circuit is connected to the control terminal of the silicon carbide power semiconductor device.

[0030] A third aspect of this application provides a power electronic device that includes the switching system described in the second aspect above.

[0031] The beneficial effects of the embodiments of this application include:

[0032] This application provides a driving circuit that receives a reference pulse width modulation signal from a reference chip via the control terminal of a driving control module. The driving control module turns on or off under the influence of the reference pulse width modulation signal, and then outputs a first turn-on control signal to a first driving module and a second driving module. When the first driving module turns on under the first turn-on control signal, it outputs a second turn-on control signal to a silicon carbide power semiconductor device. When the second driving module turns on under the first turn-on control signal, it outputs a turn-off control signal to the silicon carbide power semiconductor device. The on / off states of the first and second driving modules are not sequential, which improves the stability of the silicon carbide power semiconductor device. The reference pulse width modulation signal provided by the reference chip is a low-voltage, low-current signal, which reduces the switching losses of the silicon carbide power semiconductor device. The driving signal output by the driving circuit to the silicon carbide power semiconductor device is a low-delay signal, which improves the switching speed of the silicon carbide power semiconductor device. This simplifies the structure of the drive circuit for silicon carbide power semiconductor devices, reduces losses and delays, and ultimately improves the safety and reliability of their operation. Attached Figure Description

[0033] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0034] Figure 1 This is a schematic diagram of a driving circuit provided in an embodiment of this application;

[0035] Figure 2 This is a schematic diagram of the structure of a drive control module provided in an embodiment of this application;

[0036] Figure 3 A circuit diagram of a drive control module provided in an embodiment of this application;

[0037] Figure 4 This is a schematic diagram of the structure of a first driving module provided in an embodiment of this application;

[0038] Figure 5A circuit diagram of a first driving module provided in an embodiment of this application;

[0039] Figure 6 This is a schematic diagram of the structure of a second driving module provided in an embodiment of this application;

[0040] Figure 7 A circuit diagram of a second driving module provided in an embodiment of this application;

[0041] Figure 8 A circuit diagram of a driving circuit provided in an embodiment of this application;

[0042] Figure 9 This is a schematic diagram of a switching system provided in an embodiment of this application;

[0043] Figure 10 This is a schematic diagram of the structure of a power electronic device provided in an embodiment of this application.

[0044] Figure labels: 10: Drive circuit; 101: Drive control module; 1011: Voltage divider module; 111: First resistor; 112: Second resistor; 1012: First N-type metal-oxide-semiconductor transistor; 1013: Filter unit; 131: Third resistor; 102: First drive module; 1021: First rectifier and filter unit; 211: Fourth resistor; 212: First rectifier diode; 1022: P-type metal-oxide-semiconductor transistor; 103: Second drive module; 1031: Second rectifier and filter unit; 311: Fifth resistor; 312: Second rectifier diode; 1032: Second N-type metal-oxide-semiconductor transistor; 20: Switching system; 201: Reference chip; 202: Silicon carbide power semiconductor device; 30: Power electronic equipment. Detailed Implementation

[0045] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. The components of the embodiments of this application described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0046] Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely to illustrate selected embodiments of the application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0047] It should be noted that similar labels and letters in the following figures indicate similar items. Therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures.

[0048] In the description of this application, it should be noted that the terms "first," "second," and "third," etc., are used only for distinguishing descriptions and should not be construed as indicating or implying relative importance. It should also be noted that, unless otherwise explicitly specified and limited, the terms "connected" and "linked" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection between two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0049] Semiconductor technology has played a crucial role in the development of the power electronics industry, with power semiconductor devices serving as key components of power electronic devices. With the widespread application of power electronics technology in industries such as industry, medicine, and transportation, power semiconductor devices directly impact the production costs and operating efficiency of these devices. The most common power semiconductor device is the silicon power semiconductor device, whose application is quite mature. However, due to its inherent physical characteristics, silicon power semiconductor devices are not suitable for industrial scenarios requiring high temperatures, high pressures, and high power densities. In these cases, silicon carbide (SiC) power semiconductor devices are widely favored due to their superior physical properties. Compared to silicon power semiconductor devices, SiC power semiconductor devices have higher thermal conductivity, enabling them to achieve high current density. They also have a wider bandgap, making them suitable for operating environments with high breakdown field strengths and high operating temperatures. In addition, at the same power level, silicon carbide power semiconductor devices have significantly lower on-resistance and switching losses compared to silicon power semiconductor devices, and are suitable for higher operating frequencies. Due to their high-temperature characteristics, silicon carbide power semiconductor devices greatly improve the stability of power electronic equipment in high-temperature operating environments.

[0050] Among them, silicon carbide power semiconductor devices have the following advantages, specifically: (1) High operating temperature, the maximum operating temperature of silicon carbide power semiconductor devices can reach 175℃; (2) High operating voltage, compared with silicon power semiconductor devices, the breakdown field strength of silicon carbide power semiconductor devices is more than ten times that of silicon power semiconductor devices; (3) High switching speed and low switching loss, the power density of silicon carbide power semiconductor devices is several times that of silicon power semiconductor devices.

[0051] Currently, the driving voltage range of conventionally mass-produced silicon carbide (SiC) power semiconductor devices is -5V to +25V. The fully conductive driving voltage for SiC power semiconductor devices is typically around 18V, and the recommended driving voltage is usually -4V or +20V. However, the driving voltage range of traditional silicon (Si) power semiconductor devices is typically -30V to +30V. The fully conductive driving voltage for SiS power semiconductor devices is typically around 10V, and the recommended driving voltage is usually 0V or +12V. Compared to traditional SiS power semiconductor devices, SiC power semiconductors have higher requirements for driving voltage. However, current control chips are generally designed for the driving characteristics of SiS power semiconductor devices, necessitating the design of dedicated driving circuits tailored to the specific driving characteristics of SiC power semiconductor devices. Furthermore, SiC power semiconductor devices have a very low safety threshold; a voltage spike in the driving circuit can easily break down the oxide layer between the gate and source of the SiC power semiconductor device, leading to even higher design precision for the driving circuits of SiC power semiconductor devices.

[0052] To address this, this application provides a driving circuit. A driving control module connects to an external power supply voltage and a reference pulse width modulation (PWM) signal provided by a reference chip. The driving control module is turned on or off under the influence of the PWM signal, thereby controlling the switching of the first and second driving modules. This allows the driving circuit to output a high-voltage, high-current driving signal to the silicon carbide (SiC) power semiconductor device. The switching of the first and second driving modules is not sequential, improving the stability of the SiC power semiconductor device. The PWM signal provided by the reference chip is a low-voltage, low-current signal, reducing the switching losses of the SiC power semiconductor device. The driving signal output by the driving circuit to the SiC power semiconductor device is a low-delay signal, increasing the switching speed of the SiC power semiconductor device. This simplifies the structure of the driving circuit for the SiC power semiconductor device, reduces losses and delays, and ultimately improves the safety and reliability of the SiC power semiconductor device.

[0053] The driving circuit, switching system, and power electronic equipment provided in the embodiments of this application will be explained in detail below with reference to the accompanying drawings.

[0054] Figure 1 A schematic diagram of a driving circuit provided in this application is shown below. Figure 1 This application provides a driving circuit 10 including: a driving control module 101, a first driving module 102, and a second driving module 103.

[0055] The first terminal of the drive control module 101 is used to connect to the reference pulse width modulation signal provided by the reference chip 201. The second terminal of the drive control module 101 is used to connect to the power supply voltage. The third terminal of the drive control module 101 is connected to the second terminal of the first drive module 102 and the first terminal of the second drive module 103 respectively. The fourth terminal of the drive control module 101 and the second terminal of the second drive module 103 are both grounded.

[0056] Optionally, the reference pulse width modulation signal is a low-voltage, low-current pulse signal provided by the reference chip 201, which serves as the reference input for the drive circuit 10. The first terminal of the drive control module 101 serves as its control terminal. The drive control module 101 receives the reference pulse width modulation signal provided by the reference chip 201 through its control terminal and is turned on or off under the influence of the reference pulse width modulation signal.

[0057] Optionally, the second terminal of the drive control module 101 serves as the input terminal of the drive control module 101, and the drive control module 101 is connected to the power supply voltage provided by an external power source through the input terminal. The external power source can be an energy storage battery or other power supply device, and the power supply voltage provided by the external power source can be +15V, +18V, etc., which are not specifically limited in this application.

[0058] Optionally, the third terminal of the drive control module 101 serves as the output terminal of the drive control module 101, the second terminal of the first drive module 102 serves as the control terminal of the first drive module 102, and the first terminal of the second drive module 103 serves as the control terminal of the second drive module 103. The third terminal of the drive control module 101 is connected to the second terminal of the first drive module 102 and the first terminal of the second drive module 103. The drive control module 101 controls the switching on and off of the first drive module 102 and the second drive module 103 through the third terminal. The fourth terminal of the drive control module 101 serves as the ground terminal of the drive control module 101. The drive control module 101 can discharge excess charge provided by the external power supply through the fourth terminal.

[0059] The first terminal of the first driving module 102 is used to connect to the power supply voltage, and the third terminal of the first driving module 102 and the third terminal of the second driving module 103 are both used to connect to the control terminal of the silicon carbide power semiconductor device 202.

[0060] Optionally, the first terminal of the first driving module 102 serves as the input terminal of the first driving module 102, and the third terminal of the first driving module 102 serves as the output terminal of the first driving module 102. The first driving module 102 receives the power supply voltage provided by the external power supply through the input terminal. The first driving module 102 is turned on or off under the action of the electrical signal output by the driving control module 101. When the first driving module 102 is turned on, a corresponding pulse width modulation signal is sent to the control terminal of the silicon carbide power semiconductor device 202 through the third terminal of the first driving module 102 to drive the operation of the silicon carbide power semiconductor device 202.

[0061] Optionally, the third terminal of the second driving module 103 serves as the output terminal of the second driving module 103. When the second driving module 103 is turned on under the control of the driving control module 101, the second driving module 103 sends a corresponding pulse width modulation signal to the control terminal of the silicon carbide power semiconductor device 202 via the third terminal.

[0062] It is worth noting that the silicon carbide power semiconductor device 202 can be either an N-type metal oxide semiconductor device or a P-type metal oxide semiconductor device. The metal oxide substrate of the silicon carbide power semiconductor device 202 is a silicon carbide substrate. This application does not specifically limit the model of the silicon carbide power semiconductor device 202.

[0063] The drive control module 101 outputs a first conduction control signal to the first drive module 102 or the second drive module 103 under the action of the reference pulse width modulation signal.

[0064] Optionally, the first turn-on control signal is a control signal sent by the drive control module 101 to the first drive module 102 and the second drive module 103. When the reference pulse width modulation signal applied by the reference chip 201 to the control terminal of the drive control module 101 is high, the drive control module 101 is turned on, and the first turn-on control signal output by the drive control module 101 is a low-level signal; when the reference pulse width modulation signal applied by the reference chip 201 to the control terminal of the drive control module 101 is low, the drive control module 101 is turned off, and the first turn-on control signal output by the drive control module 101 is a high-level signal.

[0065] The first driving module 102 is used to output a second conduction control signal under the action of the first conduction control signal. The second conduction control signal is used to drive the silicon carbide power semiconductor device 202 to conduct.

[0066] Optionally, the second turn-on control signal is a control signal applied by the first drive module 102 to the control terminal of the silicon carbide power semiconductor device 202. When the first turn-on control signal output by the drive control module 101 is a low-level signal, the first drive module 102 is turned on under the action of the first turn-on control signal, and the first drive module 102 outputs the second turn-on control signal to turn on the silicon carbide power semiconductor device 202. Conversely, when the first turn-on control signal output by the drive control module 101 is a high-level signal, the first drive module 102 is turned off under the action of the first turn-on control signal, and the first drive module 102 does not output the second turn-on control signal.

[0067] The second drive module 103 is used to output a turn-off control signal under the action of the first turn-on control signal, so that the silicon carbide power semiconductor device 202 is turned off under the action of the turn-off control signal.

[0068] Optionally, the shutdown control signal is a control signal applied by the second drive module 103 to the control terminal of the silicon carbide power semiconductor device 202. When the first turn-on control signal output by the drive control module 101 is a high-level signal, the second drive module 103 is turned on under the action of the first turn-on control signal, and the second drive module 103 sends a shutdown control signal to the silicon carbide power semiconductor device 202 to turn it off. Conversely, when the first turn-on control signal output by the drive control module 101 is a low-level signal, the second drive module 103 is turned off under the action of the first turn-on control signal, and the second drive module 103 does not output a shutdown control signal.

[0069] In this embodiment, the drive control module receives a reference pulse width modulation signal from a reference chip at its control terminal. Under the influence of the reference pulse width modulation signal, the drive control module turns on or off, thereby outputting a first turn-on control signal to the first drive module and the second drive module. When the first drive module turns on under the first turn-on control signal, it outputs a second turn-on control signal to the silicon carbide power semiconductor device. When the second drive module turns on under the first turn-on control signal, it outputs a turn-off control signal to the silicon carbide power semiconductor device. The on / off states of the first and second drive modules are not sequential, which improves the stability of the silicon carbide power semiconductor device. The reference pulse width modulation signal provided by the reference chip is a low-voltage, low-current signal, which reduces the switching losses of the silicon carbide power semiconductor device. The drive signal output by the drive circuit to the silicon carbide power semiconductor device is a low-delay signal, which improves the switching speed of the silicon carbide power semiconductor device. This simplifies the structure of the drive circuit for silicon carbide power semiconductor devices, reduces losses and delays, and ultimately improves the safety and reliability of their operation.

[0070] In one alternative implementation, see [link to implementation details]. Figure 2 The drive control module 101 in the drive circuit 10 provided in this application embodiment includes: a voltage divider module 1011, a first N-type metal oxide semiconductor transistor 1012, and a filter unit 1013.

[0071] The first terminal of the voltage divider module 1011 is used to connect to the reference pulse width modulation signal provided by the reference chip 201. The second terminal of the voltage divider module 1011 is connected to the gate of the first N-type metal oxide semiconductor transistor 1012. The third terminal of the voltage divider module 1011 and the source of the first N-type metal oxide semiconductor transistor 1012 are both grounded.

[0072] Optionally, the first terminal of the voltage divider module 1011 is used as the input terminal of the voltage divider module 1011. The voltage divider module 1011 receives the reference pulse width modulation signal provided by the reference chip 201 through the input terminal and performs voltage division and filtering on the reference pulse width modulation signal.

[0073] Optionally, the second terminal of the voltage divider module 1011 serves as the output terminal of the voltage divider module 1011, and the third terminal of the voltage divider module 1011 serves as the ground terminal of the voltage divider module 1011. The voltage divider module 1011 controls the switching on and off of the first N-type metal-oxide-semiconductor transistor 1012 via the second terminal and discharges excess charge via the ground terminal.

[0074] One end of the filter unit 1013 is used to connect to the power supply voltage, and the other end of the filter unit 1013 is connected to the drain of the first N-type metal oxide semiconductor transistor 1012, the second end of the first driving module 102, and the first end of the second driving module 103, respectively.

[0075] Optionally, the filter unit 1013 is connected to the power supply voltage, filters out the voltage harmonics in the power supply voltage, and applies the filtered power supply voltage to the second terminal of the first drive module 102.

[0076] In one alternative implementation, see [link to implementation details]. Figure 3 The voltage divider module 1011 in the drive control module 101 of the drive circuit 10 provided in this application embodiment includes: a first resistor 111 and a second resistor 112.

[0077] One end of the first resistor 111 is used to connect to the reference pulse width modulation signal provided by the reference chip 201. The other end of the first resistor 111 is connected to one end of the second resistor 112 and the gate of the first N-type metal oxide semiconductor transistor 1012, respectively. The other end of the second resistor 112 is grounded.

[0078] In one alternative implementation, see [link to implementation details]. Figure 3 The filtering unit 1013 in the drive control module 101 of the drive circuit 10 provided in this application embodiment includes: a third resistor 131.

[0079] One end of the third resistor 131 is used to connect to the power supply voltage, and the other end of the third resistor 131 is connected to the drain of the first N-type metal oxide semiconductor transistor 1012, the second end of the first driving module 102, and the first end of the second driving module 103, respectively.

[0080] In one alternative implementation, see [link to implementation details]. Figure 4 The first driving module 102 in the driving circuit 10 provided in this application embodiment includes: a first rectifier filter unit 1021 and a P-type metal oxide semiconductor transistor 1022.

[0081] The first terminal of the first rectifier and filter unit 1021 is used to connect to the power supply voltage. The first terminal of the first rectifier and filter unit 1021 is also connected to the source of the P-type metal oxide semiconductor transistor 1022. The second terminal of the first rectifier and filter unit 1021 is connected to the gate of the P-type metal oxide semiconductor transistor 1022. The third terminal of the first rectifier and filter unit 1021 is connected to the third terminal of the drive control module 101 and the first terminal of the second drive module 103, respectively. The drain of the P-type metal oxide semiconductor transistor 1022 is connected to the control terminal of the silicon carbide power semiconductor device 202.

[0082] Optionally, the first end of the first rectifier and filter unit 1021 is used as the input end of the first rectifier and filter unit 1021, and the second end of the first rectifier and filter unit 1021 is used as the output end of the first rectifier and filter unit 1021. The first rectifier and filter unit 1021 is used to filter the power supply voltage provided by the external power supply and to filter the first conduction control signal output by the drive control module 101.

[0083] Optionally, the P-type metal-oxide-semiconductor transistor 1022 is used to turn on or off under the action of the power supply voltage provided by the external power supply and the first turn-on control signal. When the P-type metal-oxide-semiconductor transistor 1022 is turned on, the P-type metal-oxide-semiconductor transistor 1022 sends a second turn-on control signal to the silicon carbide power semiconductor device 202.

[0084] In one alternative implementation, see [link to implementation details]. Figure 5 The first rectifier and filter unit 1021 in the first driving module 102 of the driving circuit 10 provided in this application embodiment includes: a fourth resistor 211 and a first rectifier tube 212.

[0085] One end of the fourth resistor 211 is used to connect to the power supply voltage. One end of the fourth resistor 211 is also connected to the source of the P-type metal-oxide-semiconductor transistor 1022. The other end of the fourth resistor 211 is connected to the output terminal of the first rectifier 212 and the gate of the P-type metal-oxide-semiconductor transistor 1022, respectively. The input terminal of the first rectifier 212 is connected to the third terminal of the drive control module 101 and the first terminal of the second drive module 103, respectively.

[0086] Optionally, the first rectifier tube 212 is used to rectify the power supply voltage provided by the external power supply, and the fourth resistor 211 is used to filter the power supply voltage provided by the external power supply.

[0087] In one alternative implementation, see [link to implementation details]. Figure 6 The second driving module 103 in the driving circuit 10 provided in this application embodiment includes: a second rectifier filter unit 1031 and a second N-type metal oxide semiconductor transistor 1032.

[0088] The first terminal of the second rectifier and filter unit 1031 is connected to the third terminal of the drive control module 101 and the second terminal of the first drive module 102, respectively. The second terminal of the second rectifier and filter unit 1031 is connected to the gate of the second N-type metal oxide semiconductor transistor 1032. The drain of the second N-type metal oxide semiconductor transistor 1032 is connected to the control terminal of the silicon carbide power semiconductor device 202. The third terminal of the second rectifier and filter unit 1031 and the source of the second N-type metal oxide semiconductor transistor 1032 are both grounded.

[0089] Optionally, the first end of the second rectifier and filter unit 1031 is used as the input end of the second rectifier and filter unit 1031, and the second end of the second rectifier and filter unit 1031 is used as the ground end of the second rectifier and filter unit 1031. The second rectifier and filter unit 1031 is used to rectify and filter the first conduction control signal output by the drive control module 101.

[0090] Optionally, the second N-type metal-oxide-semiconductor transistor 1032 is used to turn on or off under the action of the first turn-on control signal. When the second N-type metal-oxide-semiconductor transistor 1032 is turned on, the P-type metal-oxide-semiconductor transistor 1022 sends a turn-off control signal to the silicon carbide power semiconductor device 202.

[0091] In one alternative implementation, see [link to implementation details]. Figure 7 The second rectifier and filter unit 1031 in the second driving module 103 of the driving circuit 10 provided in this application embodiment includes: a fifth resistor 311 and a second rectifier tube 312.

[0092] The output terminal of the second rectifier 312 is connected to the third terminal of the drive control module 101 and the second terminal of the first drive module 102, respectively. The input terminal of the second rectifier 312 is connected to one end of the fifth resistor 311 and the gate of the second N-type metal oxide semiconductor transistor 1032, respectively. The other end of the fifth resistor 311 is grounded.

[0093] In one alternative implementation, see [link to implementation details]. Figure 8The working principle of the driving circuit 10 provided in this application embodiment is as follows: When the reference pulse width modulation signal applied to the gate of the first N-type metal-oxide-semiconductor transistor 1012 by the reference chip 201 via the first resistor 111 and the second resistor 112 is a high-level signal, the first N-type metal-oxide-semiconductor transistor 1012 is turned on. The power supply voltage provided by the external power supply is grounded via the third resistor 131, and the power supply voltage provided by the external power supply is pulled low. The first turn-on control signal output by the first N-type metal-oxide-semiconductor transistor 1012 pulls down the gate voltage of the P-type metal-oxide-semiconductor transistor 1022, and the P-type metal-oxide-semiconductor transistor 1022 is turned on. The P-type metal-oxide-semiconductor transistor 1022 outputs a high voltage to the gate of the silicon carbide power semiconductor device 202. A high-level second turn-on control signal with high current is used to turn on the silicon carbide power semiconductor device 202. When the reference pulse width modulation signal applied to the gate of the first N-type metal-oxide-semiconductor transistor 1012 by the reference chip 201 via the first resistor 111 and the second resistor 112 is a low-level signal, the first N-type metal-oxide-semiconductor transistor 1012 is turned off. The first turn-on control signal output by the first N-type metal-oxide-semiconductor transistor 1012 pulls up the gate voltage of the second N-type metal-oxide-semiconductor transistor 1032, and the second N-type metal-oxide-semiconductor transistor 1032 turns on. The second N-type metal-oxide-semiconductor transistor 1032 outputs a turn-off control signal to the gate of the silicon carbide power semiconductor device 202 to turn off the silicon carbide power semiconductor device 202.

[0094] In one alternative implementation, see [link to implementation details]. Figure 9 The switching system 20 provided in this application embodiment includes: a driving circuit 10, a reference chip 201, and a silicon carbide power semiconductor device 202. The input terminal of the driving circuit 10 is used to access the reference pulse width modulation signal provided by the reference chip 201, and the output terminal of the driving circuit 10 is connected to the control terminal of the silicon carbide power semiconductor device 202.

[0095] In one alternative implementation, see [link to implementation details]. Figure 10 The power electronic device 30 provided in this application embodiment includes a switching system 20.

[0096] The above are merely specific embodiments of this application, but the scope of protection of this application is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in this application should be included within the scope of protection of this application. Therefore, the scope of protection of this application should be determined by the scope of the claims.

[0097] The above description is merely a preferred embodiment of this application and is not intended to limit this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A driving circuit, characterized in that, The driving circuit includes: a driving control module, a first driving module, and a second driving module; The first terminal of the drive control module is used to connect to the reference pulse width modulation signal provided by the reference chip, the second terminal of the drive control module is used to connect to the power supply voltage, the third terminal of the drive control module is connected to the second terminal of the first drive module and the first terminal of the second drive module respectively, and the fourth terminal of the drive control module and the second terminal of the second drive module are both grounded. The first terminal of the first driving module is used to connect to the power supply voltage, and the third terminal of both the first driving module and the third terminal of the second driving module are used to connect to the control terminal of the silicon carbide power semiconductor device. The drive control module outputs a first conduction control signal to the first drive module or the second drive module under the action of the reference pulse width modulation signal; The first driving module is used to output a second conduction control signal under the action of the first conduction control signal, and the second conduction control signal is used to drive the silicon carbide power semiconductor device to conduct. The second driving module is used to output a shutdown control signal under the action of the first turn-on control signal, so that the silicon carbide power semiconductor device is turned off under the action of the shutdown control signal.

2. The driving circuit according to claim 1, characterized in that, The drive control module includes: a voltage divider module, a first N-type metal-oxide-semiconductor transistor, and a filter unit; The first end of the voltage divider module is used to connect to the reference pulse width modulation signal provided by the reference chip, the second end of the voltage divider module is connected to the gate of the first N-type metal oxide semiconductor transistor, and the third end of the voltage divider module and the source of the first N-type metal oxide semiconductor transistor are both grounded. One end of the filter unit is used to connect to the power supply voltage, and the other end of the filter unit is connected to the drain of the first N-type metal oxide semiconductor transistor, the second end of the first driving module, and the first end of the second driving module, respectively.

3. The driving circuit according to claim 2, characterized in that, The voltage divider module includes: a first resistor and a second resistor; One end of the first resistor is used to connect to the reference pulse width modulation signal provided by the reference chip, and the other end of the first resistor is connected to one end of the second resistor and the gate of the first N-type metal-oxide-semiconductor transistor, respectively. The other end of the second resistor is grounded.

4. The driving circuit according to claim 2, characterized in that, The filtering unit includes: a third resistor; One end of the third resistor is used to connect to the power supply voltage, and the other end of the third resistor is connected to the drain of the first N-type metal-oxide-semiconductor transistor, the second end of the first driving module, and the first end of the second driving module, respectively.

5. The driving circuit according to claim 1, characterized in that, The first driving module includes: a first rectifier filter unit and a P-type metal-oxide-semiconductor transistor; The first terminal of the first rectifier and filter unit is used to connect to the power supply voltage. The first terminal of the first rectifier and filter unit is also connected to the source of the P-type metal-oxide-semiconductor transistor. The second terminal of the first rectifier and filter unit is connected to the gate of the P-type metal-oxide-semiconductor transistor. The third terminal of the first rectifier and filter unit is connected to the third terminal of the drive control module and the first terminal of the second drive module, respectively. The drain of the P-type metal-oxide-semiconductor transistor is connected to the control terminal of the silicon carbide power semiconductor device.

6. The driving circuit according to claim 5, characterized in that, The first rectifier and filter unit includes: a fourth resistor and a first rectifier diode; One end of the fourth resistor is used to connect to the power supply voltage, and the other end of the fourth resistor is also connected to the source of the P-type metal-oxide-semiconductor transistor. The other end of the fourth resistor is connected to the output terminal of the first rectifier and the gate of the P-type metal-oxide-semiconductor transistor, respectively. The input terminal of the first rectifier is connected to the third terminal of the drive control module and the first terminal of the second drive module, respectively.

7. The driving circuit according to claim 1, characterized in that, The second driving module includes: a second rectifier filter unit and a second N-type metal-oxide-semiconductor transistor; The first end of the second rectifier and filter unit is connected to the third end of the drive control module and the second end of the first drive module, respectively. The second end of the second rectifier and filter unit is connected to the gate of the second N-type metal oxide semiconductor transistor. The drain of the second N-type metal oxide semiconductor transistor is connected to the control terminal of the silicon carbide power semiconductor device. The third end of the second rectifier and filter unit and the source of the second N-type metal oxide semiconductor transistor are both grounded.

8. The driving circuit according to claim 7, characterized in that, The second rectifier and filter unit includes: a fifth resistor and a second rectifier diode; The output terminal of the second rectifier is connected to the third terminal of the drive control module and the second terminal of the first drive module, respectively. The input terminal of the second rectifier is connected to one end of the fifth resistor and the gate of the second N-type metal-oxide-semiconductor transistor, respectively. The other end of the fifth resistor is grounded.

9. A switching system, characterized in that, The switching system includes: the driving circuit, the reference chip, and the silicon carbide power semiconductor device as described in any one of claims 1-8; The input terminal of the driving circuit is used to receive the reference pulse width modulation signal provided by the reference chip, and the output terminal of the driving circuit is connected to the control terminal of the silicon carbide power semiconductor device.

10. A power electronic device, characterized in that, The power electronic device includes the switching system of claim 9.

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