Package structure

Abstract

A package structure includes a top interposer formed over a substrate; and a first die formed over the top interposer. The first die includes an optical package structure, and the optical package structure includes a plurality of first optical components. The first die also includes an electronic die bonded to the optical package structure to form a hybrid bonded structure. The hybrid bonding structure includes a metal-to-metal bonding and a non-metal-to-non-metal bonding. The package structure includes an optical die adjacent to the first die, and the optical die and the first die share a top interposer.

Description

TECHNICAL FIELD

[0001] Embodiments of the present utility model relate to a semiconductor technology, in particular to a packaging structure. BACKGROUND

[0002] Semiconductor devices are used in a variety of electronic applications, such as personal computers, cell phones, digital cameras and other electronic devices. A semiconductor device generally includes a semiconductor substrate having a plurality of layers of materials deposited thereon in a sequential manner, such as insulating or dielectric layers, conductive layers, and semiconductor material layers, and is patterned using photolithography techniques to form circuit components and elements thereon. A large number of integrated circuits can be fabricated on a single semiconductor wafer, and each die on the wafer can be singulated by sawing along streets between the integrated circuits. Each die can be individually packaged in, for example, a multi-chip module or other type of package.

[0003] New packaging technologies have been developed, such as package on package (PoP), in which a top package having a device die is bonded to a bottom package having another device die. By employing new packaging technologies, various packages having different or similar functions can be integrated together.

[0004] Although the existing packaging structures and the manufacturing methods of the packaging structures are generally sufficient for their intended purposes, these packaging structures and the manufacturing methods of the packaging structures are not completely satisfactory in all respects. SUMMARY

[0005] The present utility model aims to provide a packaging structure to solve at least one of the above problems.

[0006] In some embodiments, a packaging structure is provided, the packaging structure includes a top interposer formed above a substrate; a first die formed above the top interposer, wherein the first die includes: an optical packaging structure, wherein the optical packaging structure includes a plurality of first optical components; and an electronic die bonded to the optical packaging structure; and an optical die adjacent to the first die, wherein the optical die and the first die share the top interposer.

[0007] According to one of the embodiments of the present utility model, further comprising: a bottom interposer formed below the top interposer; and a first semiconductor die formed adjacent to the top interposer, wherein the first semiconductor die and the top interposer are bonded to the bottom interposer.

[0008] According to one of the embodiments of the present utility model, the bottom interposer includes a plurality of dies, wherein each of the plurality of dies includes an interconnect structure.

[0009] According to one of the embodiments of the present application, further comprising: an optical array formed adjacent to the first die; and a carrier substrate formed on the first die, wherein the carrier substrate comprises a lens.

[0010] According to one of the embodiments of the present application, further comprising: a cooler formed on the first die and the optical die.

[0011] According to one of the embodiments of the present application, further comprising: an optical glue between the first die and the optical die.

[0012] According to one of the embodiments of the present application, further comprising: a bridge structure formed on the first die and the optical die, wherein the bridge structure comprises a waveguide.

[0013] According to one of the embodiments of the present application, further comprising: a bottom interposer formed below the top interposer, wherein the bottom interposer comprises a memory layer.

[0014] According to one of the embodiments of the present application, further comprising: a second die formed above the top interposer, wherein the second die comprises: an optical package structure, wherein the optical package structure comprises a plurality of second optical components; and an electronic die bonded to the optical package structure to form a hybrid bonding structure, wherein the hybrid bonding structure comprises metal-to-metal bonding and non-metal-to-non-metal bonding; and a bridge structure between the first die and the second die.

[0015] In some embodiments, a package structure is provided, comprising: a top interposer formed above a bottom interposer; a composite die formed on the top interposer, wherein the composite die comprises: an optical package structure, wherein the optical package structure comprises a plurality of first optical components; and an electronic die bonded to the optical package structure; a laser die formed on the top interposer, wherein the laser die and the composite die are bonded to the top interposer; and a semiconductor die formed adjacent to the laser die, wherein the semiconductor die and the top interposer are bonded to the bottom interposer. BRIEF DESCRIPTION OF DRAWINGS

[0016] The embodiments of the present application can be more clearly understood with the following detailed description taken in conjunction with the accompanying drawings. It should be noted that the various features of the drawings are not necessarily drawn to scale. Indeed, the dimensions of the various features can be expanded or reduced for the clarity of presentation and description.

[0017] FIG. 1A 、 FIG. 1B 、 FIG. 1C 、 FIG. 1D 、 FIG. 1E、 FIG. 1F 、 FIG. 1G 、 FIG. 1H 、 FIG. 1I 、 FIG. 1J 、 FIG. 1K 、 FIG. 1L A cross-sectional schematic view showing stages of fabricating a package structure in accordance with some embodiments.

[0018] FIG. 2 A cross-sectional schematic view showing an enlarged area A of a package structure in accordance with some embodiments. FIG. 1K

[0019] A cross-sectional schematic view showing an enlarged area B of a package structure in accordance with some embodiments. FIG. 3 FIG. 1K A cross-sectional schematic view showing a package structure in accordance with some embodiments.

[0020] FIG. 4 A cross-sectional schematic view showing a package structure in accordance with some embodiments.

[0021] FIG. 5 A cross-sectional schematic view showing a package structure in accordance with some embodiments.

[0022] FIG. 6 A cross-sectional schematic view showing a package structure in accordance with some embodiments.

[0023] FIG. 7 A cross-sectional schematic view showing a package structure in accordance with some embodiments.

[0024] FIG. 8 A cross-sectional schematic view showing a package structure in accordance with some embodiments.

[0025] FIG. 9 A cross-sectional schematic view showing a package structure in accordance with some embodiments.

[0026] FIG. 10 A cross-sectional schematic view showing a package structure in accordance with some embodiments.

[0027] FIG. 11 A cross-sectional schematic view showing a package structure in accordance with some embodiments.

[0028] FIG. 12 A cross-sectional schematic view showing a package structure in accordance with some embodiments.

[0029] FIG. 13 A cross-sectional schematic view showing a package structure in accordance with some embodiments.

[0030] FIG. 14 A cross-sectional schematic view showing a package structure in accordance with some embodiments.

[0031] FIG. 15 ​A cross-sectional view of a package structure is shown in accordance with some embodiments.

[0032] FIG. 16 A cross-sectional view of a package structure is shown in accordance with some embodiments.

[0033] FIG. 17 A cross-sectional view of a package structure is shown in accordance with some embodiments.

[0034] FIG. 18 A cross-sectional view of a package structure is shown in accordance with some embodiments.

[0035] FIG. 19 A cross-sectional view of a package structure is shown in accordance with some embodiments.

[0036] FIG. 20 A cross-sectional view of a package structure is shown in accordance with some embodiments.

[0037] FIG. 21 A cross-sectional view of a package structure is shown in accordance with some embodiments.

[0038] FIG. 22 A cross-sectional view of a package structure is shown in accordance with some embodiments.

[0039] FIG. 23 A cross-sectional view of a package structure is shown in accordance with some embodiments.

[0040] FIG. 24 A cross-sectional view of a package structure is shown in accordance with some embodiments.

[0041] FIG. 25 A cross-sectional view of a package structure is shown in accordance with some embodiments.

[0042] FIG. 26 A cross-sectional view of a package structure is shown in accordance with some embodiments.

[0043] FIG. 27 A cross-sectional view of a package structure is shown in accordance with some embodiments.

[0044] FIG. 28 A cross-sectional view of a package structure is shown in accordance with some embodiments.

[0045] FIG. 29 A cross-sectional view of a package structure is shown in accordance with some embodiments.

[0046] FIG. 30 A cross-sectional view of a package structure is shown in accordance with some embodiments.

[0047] FIG. 31 A cross-sectional view of a package structure is shown in accordance with some embodiments.

[0048] FIG. 32 A cross-sectional schematic view of a package structure is shown in accordance with some embodiments.

[0049] FIG. 33 A cross-sectional schematic view of a package structure is shown in accordance with some embodiments.

[0050] FIG. 34 A cross-sectional schematic view of a package structure is shown in accordance with some embodiments.

[0051] FIG. 35 A cross-sectional schematic view of a package structure is shown in accordance with some embodiments.

[0052] FIG. 36 A cross-sectional schematic view of a package structure is shown in accordance with some embodiments.

[0053] FIG. 37 A cross-sectional schematic view of a package structure is shown in accordance with some embodiments.

[0054] FIG. 38 A cross-sectional schematic view of a package structure is shown in accordance with some embodiments.

[0055] FIG. 39 A cross-sectional schematic view of a package structure is shown in accordance with some embodiments.

[0056] FIG. 40 A cross-sectional schematic view of a package structure is shown in accordance with some embodiments.

[0057] FIG. 41 A cross-sectional schematic view of a package structure is shown in accordance with some embodiments.

[0058] FIG. 42 A cross-sectional schematic view of a package structure is shown in accordance with some embodiments.

[0059] FIG. 43 A cross-sectional schematic view of a package structure is shown in accordance with some embodiments.

[0060] FIG. 44 A cross-sectional schematic view of a package structure is shown in accordance with some embodiments.

[0061] FIG. 45A 、 FIG. 45B 、 FIG. 45C 、 FIG. 45D 、 FIG. 45E 、 FIG. 45F 、 FIG. 45G 、 FIG. 45H 、 FIG. 45I 、 FIG. 45J 、 FIG. 45K 、 FIG. 45L A cross-sectional schematic view of a package structure is shown in accordance with some embodiments.

[0062] FIG. 46 A cross-sectional view of a package structure is shown in accordance with some embodiments.

[0063] FIG. 47 A cross-sectional view of a package structure is shown in accordance with some embodiments.

[0064] FIG. 48 A cross-sectional view of a package structure is shown in accordance with some embodiments.

[0065] FIG. 49 A cross-sectional view of a package structure is shown in accordance with some embodiments.

[0066] FIG. 50 A cross-sectional view of a package structure is shown in accordance with some embodiments.

[0067] FIG. 51 A cross-sectional view of a package structure is shown in accordance with some embodiments.

[0068] FIG. 52A A top view of a package structure is shown in accordance with some embodiments.

[0069] FIG. 52B A cross-sectional view of a package structure is shown in accordance with some embodiments, along line A-A’. FIG. 52A

[0070] A cross-sectional view of a package structure is shown in accordance with some embodiments, along line B-B’. FIG. 52C FIG. 52A A top view of a package structure is shown in accordance with some embodiments.

[0071] FIG. 53A A cross-sectional view of a package structure is shown in accordance with some embodiments, along line A-A’.

[0072] FIG. 53B FIG. 53A A cross-sectional view of a package structure is shown in accordance with some embodiments, along line B-B’.

[0073] FIG. 53C A top view of a package structure is shown in accordance with some embodiments. FIG. 53A

[0074] A cross-sectional view of a package structure is shown in accordance with some embodiments, along line A-A’. FIG. 54A

[0075] A cross-sectional view of a package structure is shown in accordance with some embodiments, along line B-B’. FIG. 54B FIG. 54A A top view of a package structure is shown in accordance with some embodiments.

[0076] FIG. 54C FIG. 54A ​​​​a cross-sectional view of the package structure along line B-B' shown in FIG. 1.

[0077] FIG. 55A a top view of the package structure according to some embodiments.

[0078] FIG. 55B a cross-sectional view of the package structure along line A-A' shown in FIG. 2. FIG. 55A

[0079] FIG. 55C a cross-sectional view of the package structure along line B-B' shown in FIG. 3. FIG. 55A

[0080] FIG. 56A a top view of the package structure according to some embodiments.

[0081] FIG. 56B a cross-sectional view of the package structure along line A-A' shown in FIG. 4. FIG. 56A

[0082] FIG. 56C a cross-sectional view of the package structure along line B-B' shown in FIG. 5. FIG. 56A

[0083] a top view of the package structure according to some embodiments. FIG. 57A

[0084] a cross-sectional view of the package structure along line A-A' shown in FIG. 6. FIG. 57B FIG. 57A

[0085] a cross-sectional view of the package structure along line B-B' shown in FIG. 7. FIG. 57C FIG. 57A a top view of the package structure according to some embodiments.

[0086]

[0087] 10: optical package structure

[0088] 12, 122, 412, 422, 423, 472, 474, 512, 702, 802, 842, 874, 1000: substrate

[0089] 14: insulating layer

[0090] 16: silicon layer

[0091] 20, 56, 58, 150, 348, 418, 478, 810, 828: optical component

[0092] 22, 804: waveguide​​​​​​

[0093] 24,806: coupler

[0094] 26,808: modulator

[0095] 30,42,52,132,142,210,242,310,342,414,476,477,522,812,822,826,848,862: dielectric layer

[0096] 40,130: interconnect structure

[0097] 44,134,524,824,850: conductive layer

[0098] 46,62,148,246,346,834,852,858: conductive pad

[0099] 50: electronic die

[0100] 54,416,480,830: mirror

[0101] 60,332: via

[0102] 100a,100b,100c,100d,100e,100f,100g,100h,100i,100j,200a,200b,200c,200d,200e,200f,200g,200h,200i,200j,300a,300b,300c,300d,300e,300f,300g,300h,300i,300j,400a,400b,400c,400d,400e,400f,400g,400h,400i,400j,400k,400l,500a,500b,500c,500d,500e,500f,500g,600a,600b,600c,600d,600e,600f: package structure

[0103] 126,846,856: substrate via structure

[0104] 156,864,870,876,1002: conductive connector

[0105] 160: top interposer

[0106] 250,350,360: carrier substrate

[0107] 252,254,362,364,486: lens

[0108] 260: composite die

[0109] 300: optical die

[0110] 306: primary optical structure

[0111] 351, 368, 424, 484: optical glue

[0112] 366: connecting die

[0113] 370, 410: optical fiber

[0114] 372, 544, 794: encapsulation layer

[0115] 388, 526, 688, 788: bonded conductive connector

[0116] 394: arrow

[0117] 400, 400’: optical array

[0118] 404: cladding layer

[0119] 408: optical fiber sheath

[0120] 450: thermoelectric cooler

[0121] 452: first plate

[0122] 454: second plate

[0123] 456: first region

[0124] 458: second region

[0125] 460: top substrate

[0126] 462: connecting structure

[0127] 470, 470’: bridging structure

[0128] 472: semiconductor substrate

[0129] 510, 880: bottom interposer

[0130] 514: substrate via structure

[0131] 540: local silicon interconnect interposer

[0132] 542: local silicon interconnect die

[0133] 546: via

[0134] 552: front-side interconnect structure

[0135] 554: back-side interconnect structure

[0136] 600, 700: semiconductor die

[0137] 792: underfill layer

[0138] 809: germanium modulator

[0139] 844: memory layer

[0140] 863: under bump metallization layer DETAILED DESCRIPTION

[0141] It is to be understood that the following description provides many different embodiments, or examples, to implement various aspects of the subject matter provided. Some of these embodiments can be implemented in different specific ways. The following description is presented for the purpose of simplifying the present disclosure and does not present a limitation of the present embodiments. For example, the dimensions of the elements are not limited to the ranges or values of one embodiment of the present disclosure, but can depend on the processing conditions and / or required properties of the elements. In addition, the following description includes embodiments in which a first component is formed above or on a second component, and the first and second components are formed in direct contact, and also includes embodiments in which additional components can be formed between the first and second components, such that the first and second components can not be in direct contact. Furthermore, different examples in the content can use repeated reference numerals and / or words. These repeated reference numerals or words are for the purpose of simplification and clarity, and are not intended to limit the relationship between the various embodiments and / or the appearance of the structure.

[0142] Some variations of some embodiments are described herein. In the various schematic diagrams and displays of embodiments herein, similar reference numerals are used to label similar elements. It is understood that additional operations can be provided before, during, and / or after these methods, and some of the operations described can be replaced or eliminated for other embodiments of the methods.

[0143] Other components and processes can also be included. For example, test structures can be included to facilitate verification testing of the three-dimensional package or three-dimensional integrated circuit device. The test structures can include test pads formed in a redistribution layer or on a substrate, for example, that allow for testing of the three-dimensional package or three-dimensional integrated circuit device, use of probes and / or probe cards, and the like. Verification testing can be performed on intermediate structures as well as final structures. Furthermore, the structures and methods disclosed herein can be used in conjunction with test methods that incorporate intermediate verification of known good dies to increase yield and reduce costs.

[0144] Embodiments of a package structure and a method of forming the same are provided. The package structure includes a composite die and an optical die adjacent to the composite die, the composite die including an optical package structure (e.g., a photonic integrated circuit (PIC)) and an electronic die (e.g., an electronic integrated circuit (EIC)). The composite die and the optical die are formed on a top interposer, and the composite die and the optical die share the top interposer. Since the optical die is adjacent to the composite die, the alignment accuracy between the optical die and the composite die becomes easier. Furthermore, the optical die provides a build-in light source to improve the optical coupling efficiency.

[0145] In addition, the optical die is configured to provide light to the composite die instead of from an external environment, reducing light loss and greatly improving light efficiency. Therefore, the performance and reliability of the package structure are further improved.

[0146] Embodiments of the present application can be applied to, but are not limited to, embodiments of a chip-on-wafer-on-substrate (CoWoS) package structure, which includes an optical package structure and an electronic die.

[0147] FIG. 1A 、 FIG. 1B 、 FIG. 1C 、 FIG. 1D 、 FIG. 1E 、 FIG. 1F 、 FIG. 1G 、 FIG. 1H 、 FIG. 1I 、 FIG. 1J 、 FIG. 1K 、 FIG. 1L FIG. 1 shows a cross-sectional view of a package structure 100a according to some embodiments.

[0148] According to some embodiments, as shown in FIG. 2, the optical package structure 10 is formed by the steps of FIG. 1A FIG. 1D FIG. 1A through FIG. 1C

[0149] The insulating layer 14 is formed above the substrate 12, and the silicon layer 16 is formed above the insulating layer 14. In some embodiments, the substrate 12, the insulating layer 14, and the silicon layer 16 collectively are part of a silicon-on-insulator (SOI) substrate. ​​​

[0150] The substrate 12 can be a semiconductor wafer, such as a silicon wafer. Alternatively or additionally, the substrate 12 can include elemental semiconductor materials, compound semiconductor materials, and / or alloy semiconductor materials. Elemental semiconductor materials can include, but are not limited to, crystalline silicon, polycrystalline silicon, amorphous silicon, germanium, and / or diamond. Compound semiconductor materials can include, but are not limited to, silicon carbide, gallium arsenide, gallium phosphide, indium phosphide, indium arsenide, and / or indium antimonide. Alloy semiconductor materials can include, but are not limited to, SiGe, GaAsP, AlInAs, AlGaAs, GaInAs, GaInP, and / or GaInAsP.

[0151] The insulating layer 14 can be silicon oxide, silicon nitride, germanium oxide, germanium nitride, a combination of the foregoing, or other applicable materials. In some embodiments, the insulating layer 14 is formed by using thermal oxidation, chemical vapor deposition (CVD), atomic layer deposition (ALD), physical vapor deposition (PVD), other suitable methods, or a combination of the foregoing.

[0152] Next, the silicon layer 16 is patterned to form optical components 20, according to some embodiments, as shown in FIG. 2B. Various optical components 20 are used to form a photonic integrated circuit (PIC). The optical components 20 include optical waveguides (e.g., ridge waveguides, rib waveguides, buried channel waveguides, diffused waveguides, slab waveguides, etc.), couplers (e.g., grating couplers, edge couplers, etc.), optical switches (e.g., Mach-Zehnder silicon photonic switches, microelectromechanical switches, microring resonators, etc.), amplifiers, multiplexors, demultiplexors, optoelectronic converters (e.g., PN junctions), electro-optic converters, lasers, combinations of the foregoing, or the like. The optical components 20 are formed by a patterning process. The patterning process includes a photoresist coating process (e.g., spin coating), a soft bake, a mask alignment, an exposure, a post-exposure bake, a photoresist development, a cleaning, and a drying (e.g., a hard bake). The etching process can include a dry etching process or a wet etching process. FIG. 1B In some embodiments, the optical components 20 include waveguides 22, couplers 24, and modulators 26.

[0153]

[0154] ​Waveguide 22 is used to guide electromagnetic waves with minimal energy loss by confining energy transmission to two dimensions. In some embodiments, multiple waveguides are formed and connected as a single continuous structure.

[0155] Coupler 24 may be integrated with waveguide 22 and may be formed together with waveguide 22. Coupler 24 is a photonic structure that allows optical signals and / or optical power to be transmitted between waveguides 22. In some embodiments, coupler 24 includes a grating coupler that allows optical signals and / or optical power to be transmitted between waveguides 22.

[0156] Modulator 26 is optically coupled to waveguide 22 to receive electrical signals by modulating the optical power in waveguide 22 and to generate corresponding optical signals in waveguide 22. Modulator 26 may include a germanium modulator above modulator 26. In some embodiments, the germanium modulator is formed by partially etching a portion of silicon layer 16 to form a notch and growing epitaxial material in the notch on the remaining silicon layer 16. Silicon layer 16 may be etched using photolithography and etching techniques. Epitaxial material may comprise semiconductor material, such as doped or undoped germanium (Ge).

[0157] Although FIG. 1B The display shows the configuration and arrangement of the optical components 20, including waveguide 22, coupler 24 and modulator 26, but the configuration and arrangement of the optical components 20 can be adjusted according to the actual application.

[0158] Subsequently, based on some embodiments, such as FIG. 1C As shown, a dielectric layer 30 is formed on the optical component 20. More specifically, the dielectric layer 30 is formed on the waveguide 22, the coupler 24, and the modulator 26. The dielectric layer 30 is used to separate the various optical components 20.

[0159] In some embodiments, dielectric layer 30 comprises silicon oxide, silicon nitride, silicon oxynitride (SiON), or a combination thereof. In some embodiments, dielectric layer 30 is formed using thermal oxidation, chemical vapor deposition (CVD), atomic layer deposition (ALD), physical vapor deposition (PVD), other suitable methods, or a combination thereof. In some embodiments, the refractive index of dielectric layer 30 is in the range of 1.4 to about 2.2. When the refractive indices of waveguide 22, coupler 24, and modulator 26 are greater than the refractive index of dielectric layer 30, light can be confined within waveguide 22, coupler 24, and modulator 26. When waveguide 22, coupler 24, and modulator 26 are made of silicon, the refractive index of silicon is about 3.4.

[0160] Next, based on some embodiments, such as FIG. 1DAs shown, interconnect structure 40 is formed above dielectric layer 30. Interconnect structure 40 includes conductive layer 44 and conductive pad 46 buried in dielectric layer 42. Interconnect structure 40 can be used as a redistribution (RDL) structure for wiring. Thus, optical package structure 10 is formed to have optical component 20 and interconnect structure 40 for connecting other dies or chips.

[0161] It should be noted that one or more optical components may be formed in the dielectric layer 42 of the interconnect structure 40. The optical components may include optical waveguides (e.g., ridge waveguides, rib waveguides, buried channel waveguides, diffused waveguides, plate waveguides, etc.), couplers (e.g., grating couplers, edge couplers, etc.), optical switches (e.g., Mach-Zehnder silicon photonic switches, microelectromechanical switches, microring resonators, etc.), amplifiers, multiplexers, demultiplexers, photoelectric converters (e.g., PN junctions), electro-optic converters, lasers, combinations thereof, or the like.

[0162] In some embodiments, the dielectric layer 42 comprises silicon oxide (SiO2), silicon nitride (SiN), silicon carbide (SiC), silicon oxynitride (SiON), silicon carbide nitride (SiCN), silicon oxynitride carbon (SiOCN), and / or combinations thereof. In some embodiments, the dielectric layer 42 is formed by using thermal oxidation, chemical vapor deposition (CVD), atomic layer deposition (ALD), physical vapor deposition (PVD), other suitable methods, or combinations thereof.

[0163] In some embodiments, the conductive layer 44 and the conductive pad 46 are made of a conductive material, such as copper (Cu), copper alloys, aluminum (Al), aluminum alloys, combinations thereof, or other applicable materials. In some embodiments, the conductive layer 44 and the conductive pad 46 are formed by chemical vapor deposition (CVD), physical vapor deposition (PVD), plasma-assisted chemical vapor deposition (PECVD), plasma-assisted physical vapor deposition (PEPVD), atomic layer deposition (ALD), or other applicable deposition processes.

[0164] Subsequently, based on some embodiments, such as FIG. 1E As shown, the electronic die 50 is bonded to the optical package structure 10. In some embodiments, the electronic die 50 is an electronic integrated circuit (EIC). The electronic die 50 includes conductive pads 246 embedded in the dielectric layer 242, and the conductive pads 246 are used to bond the interconnect structure 40.

[0165] The electronic die 50 can include integrated circuits for connecting with various photonic components formed in the dielectric layer 42 of the interconnect structure 40 or in the dielectric layer 30 of the optical package structure 10. The electronic die 50 is used to communicate with one or more optical components 20 in the optical package structure 10 using electrical signals.

[0166] In some embodiments, the electronic die 50 includes a suitable device such as an x processing unit (xPU), a logic die, a three dimensional IC (3DIC) die, a central processing unit (CPU), a graphic processing unit (GPU), a system-on-chip (SoC) die, a micro-electromechanical system (MEMS) die, or a combination of the foregoing. Although FIG. 1E While one electronic die 50 is shown, two or more electronic dies 50 can be bonded to the interconnect structure 40.

[0167] Prior to bonding the electronic die 50 and the optical package structure 10 together, a surface treatment is performed to activate the surfaces of the conductive pads 246 and the conductive pads 46. In some embodiments, the surface treatment includes a dry treatment, a wet treatment, a plasma treatment, exposure to an inert gas, exposure to H2, exposure to N2, exposure to O2, the like, or a combination of the foregoing. After the surface treatment, a cleaning process is performed on the electronic die 50 and the optical package structure 10. Thereafter, the electronic die 50 and the optical package structure 10 are aligned such that the conductive pads 246 of the electronic die 50 can be bonded to the conductive pads 46 of the package structure 10 and the dielectric layer 242 can be bonded to the dielectric layer 42 of the interconnect structure 40 of the optical package structure 10. In some embodiments, the alignment of the electronic die 50 and the optical package structure 10 can be achieved by using an optical sensing method.

[0168] After the alignment is performed, the electronic die 50 and the optical package structure 10 are bonded together by a hybrid bonding structure. The hybrid bonding structure includes at least two types of bonding structures including a metal-to-metal bonding structure and a non-metal-to-non-metal bonding structure. The metal-to-metal bonding structure includes the conductive pads 246 of the electronic die 50 bonded to the conductive pads 46 of the package structure 10. The non-metal-to-non-metal bonding structure includes the dielectric layer 242 of the electronic die 50 bonded to the dielectric layer 42 of the interconnect structure 40 of the optical package structure 10. The electronic die 50 and the optical package structure 10 are hybrid-bonded together by applying pressure and heat.

[0169] Next, in accordance with some embodiments, as FIG. 1FAs shown, a dielectric layer 210 is formed on the optical packaging structure 10 and adjacent to the electronic die 50. In some embodiments, the dielectric layer 210 is an oxide layer. The top surface of the electronic die 50 is substantially coplanar with the top surface of the dielectric layer 210.

[0170] Subsequently, based on some embodiments, such as FIG. 1G As shown, the carrier substrate 250 is formed on the electronic die 50 and the dielectric layer 210. Before the carrier substrate 250 is formed on the electronic die 50 and the dielectric layer 210, lenses 252 and 254 are pre-formed in the carrier substrate 250.

[0171] During subsequent processing, the support substrate 250 is configured to provide mechanical and structural support. The support substrate 250 comprises glass, silicon dioxide, aluminum oxide, metal, combinations thereof, and / or the like.

[0172] Next, based on some embodiments, such as FIG. 1H As shown, after forming the carrier substrate 250, the substrate 12 and the insulating layer 14 are removed to expose the optical component 20. Next, a dielectric layer 52 is formed on the exposed surface of the optical component 20, and a via 60 is formed through the dielectric layer 30 and the dielectric layer 52. Thus, a composite die 260 comprising the optical packaging structure 10 and the electronic die 50 is formed.

[0173] An opening is formed through dielectric layers 30 and 52 using a patterning process. The patterning process includes photolithography and etching. The photolithography process includes photoresist coating (e.g., spin coating), soft baking, mask alignment, exposure, post-exposure baking, photoresist development, cleaning, and drying (e.g., hard baking). The etching process may include dry etching or wet etching. Subsequently, a barrier layer and conductive material are formed in the opening to form a via 60.

[0174] The reflector 54 and optical components 56 and 58 are formed in the dielectric layer 52. Optical components 56 and 58 may include optical waveguides (e.g., ridge waveguides, rib waveguides, buried channel waveguides, diffused waveguides, plate waveguides, etc.), couplers (e.g., grating couplers, edge couplers, etc.), optical switches (e.g., Mach-Zehnder silicon photonic switches, microelectromechanical switches, microring resonators, etc.), amplifiers, multiplexers, demultiplexers, photoelectric converters (e.g., PN junctions), electro-optic converters, lasers, combinations thereof, or the like. In some embodiments, optical components 56 and 58 include optical waveguides, and the optical waveguides are made of SiN.

[0175] Conductive pad 62 is formed in dielectric layer 52. Conductive pad 62 is configured to bond to another conductive pad to form a hybrid bonding structure.

[0176] In some embodiments, the dielectric layer 52 comprises silicon oxide (Si02), silicon nitride (SiN), silicon carbide (SiC), silicon oxynitride (SiON), silicon carbonitride (SiCN), silicon oxycarbonitride (SiOCN), and / or combinations of the foregoing. In some embodiments, the dielectric layer 52 is formed using thermal oxidation, chemical vapor deposition (CVD), atomic layer deposition (ALD), physical vapor deposition (PVD), other suitable methods, or combinations of the foregoing. In some embodiments, the dielectric layer 52 has a refractive index in a range from 1.4 to about 2.2.

[0177] In some embodiments, the conductive pads 62 are made of a conductive material, such as copper (Cu), copper alloy, aluminum (Al), aluminum alloy, combinations of the foregoing, or other applicable materials. In some embodiments, the conductive pads 62 are formed by chemical vapor deposition (CVD), physical vapor deposition (PVD), plasma-enhanced chemical vapor deposition (PECVD), plasma-enhanced physical vapor deposition (PEPVD), atomic layer deposition (ALD), or other applicable deposition processes.

[0178] Thereafter, according to some embodiments, an interconnect structure 130 is formed on the substrate 122, as shown in FIG. 1C. The interconnect structure 130 includes a conductive layer 134 embedded in a dielectric layer 132. The interconnect structure 130 can be used as a redistribution layer (RDL) structure for wiring. FIG. 1I

[0179] The substrate 122 can be a semiconductor wafer, such as a silicon wafer. Alternatively or additionally, the substrate 122 can include elemental semiconductor materials, compound semiconductor materials, and / or alloy semiconductor materials. Elemental semiconductor materials can include, but are not limited to, crystalline silicon, polycrystalline silicon, amorphous silicon, germanium, and / or diamond. Compound semiconductor materials can include, but are not limited to, silicon carbide, gallium arsenide, gallium phosphide, indium phosphide, indium arsenide, and / or indium antimonide. Alloy semiconductor materials can include, but are not limited to, SiGe, GaAsP, AlInAs, AlGaAs, GaInAs, GaInP, and / or GaInAsP.

[0180] The dielectric layer 132 comprises silicon oxide (Si02), silicon nitride (SiN), silicon carbide (SiC), silicon oxynitride (SiON), silicon carbonitride (SiCN), silicon oxycarbonitride (SiOCN), and / or combinations of the foregoing. In some embodiments, the dielectric layer 132 is formed using thermal oxidation, chemical vapor deposition (CVD), atomic layer deposition (ALD), physical vapor deposition (PVD), other suitable methods, or combinations of the foregoing.

[0181] ​In some embodiments, the conductive layer 134 is made of a conductive material, such as copper (Cu), copper alloys, aluminum (Al), aluminum alloys, combinations thereof, or other applicable materials. In some embodiments, the conductive layer 134 is formed by chemical vapor deposition (CVD), physical vapor deposition (PVD), plasma-assisted chemical vapor deposition (PECVD), plasma-assisted physical vapor deposition (PEPVD), atomic layer deposition (ALD), or other applicable deposition processes.

[0182] Subsequently, based on some embodiments, such as FIG. 1J As shown, dielectric layer 142 is formed on dielectric layer 132, and conductive pad 148 and optical component 150 are formed in dielectric layer 142 to form top interposer 160. Optical component 150 may include optical waveguides (e.g., ridge waveguides, rib waveguides, buried channel waveguides, diffused waveguides, plate waveguides, etc.), couplers (e.g., grating couplers, edge couplers, etc.), optical switches (e.g., Mach-Zehnder silicon photonic switches, microelectromechanical switches, microring resonators, etc.), amplifiers, multiplexers, demultiplexers, photoelectric converters (e.g., PN junctions), electro-optic converters, lasers, combinations thereof, or the like. In some embodiments, optical component 150 includes optical waveguides made of SiN.

[0183] By forming optical components 150, 56, and 58, optical signals can be transmitted horizontally through optical coupling between optical components 150, 56, and 58. Optical signal wiring is located in and between optical chips 300 (shown later), the top interposer 160, and the composite chip 260. The coupling efficiency is significantly improved by reducing the distance between two adjacent optical components 150, 56, and 58.

[0184] Subsequently, based on some embodiments, such as FIG. 1K As shown, an optical die 300 is provided, and a carrier substrate 350 is formed on the optical die 300. A composite die 260 and the optical die 300 are bonded to a top interposer 160 via a hybrid bonding structure to form a connecting die 366. Next, a carrier substrate 360 ​​is formed on carrier substrates 250 and 350. The carrier substrate 360 ​​includes lenses 362 and 364. An optical adhesive 368 is formed on the carrier substrate 360, and an optical fiber 370 is formed on the optical adhesive 368. The optical die 300 is configured to provide light to the composite die 260, rather than from the external environment, reducing light loss and significantly improving light efficiency. Furthermore, the form factor of the packaging structure 100a is reduced.

[0185] Next, an encapsulation layer 372 is formed to surround the composite die 260 and the optical die 300. Then, a conductive connector 156 is formed below the top interposer layer 160.

[0186] The composite die 260 is bonded to the top interposer 160 by bonding the conductive pad 62 to the conductive pad 148 and bonding the dielectric layer 52 to the dielectric layer 142.

[0187] The optical die 300 includes a main optical structure 306 formed in the dielectric layer 310 and a via 332 formed through the dielectric layer 342. Additionally, a conductive pad 346 and an optical component 348 are formed in the dielectric layer 342. In some embodiments, the optical die 300 is a laser die. The optical die 300 is bonded to the top interposer 160 by bonding the conductive pad 346 to the conductive pad 148 and bonding the dielectric layer 342 to the dielectric layer 142.

[0188] Optical component 348 may include optical waveguides (e.g., ridge waveguides, rib waveguides, buried channel waveguides, diffused waveguides, plate waveguides, etc.), couplers (e.g., grating couplers, edge couplers, etc.), optical switches (e.g., Mach-Zehnder silicon photonic switches, microelectromechanical switches, microring resonators, etc.), amplifiers, multiplexers, demultiplexers, photoelectric converters (e.g., PN junctions), electro-optic converters, lasers, combinations thereof, or the like. In some embodiments, optical component 348 includes optical waveguides, and the optical waveguides are made of SiN. By forming optical components 348, 150, 56, and 58, optical signals can be transmitted horizontally through optical coupling between adjacent optical components 348, 150, 56, and 58. Optical signal wiring is provided in and between optical grains 300, top interposer 160, and composite grains 260.

[0189] The conductive connector 156 may be made of copper, copper alloy, or other suitable materials. In some embodiments, the conductive connector 156 is formed by electroplating, electroless plating, chemical vapor deposition (CVD), physical vapor deposition, or other applicable processes.

[0190] Next, based on some embodiments, such as FIG. 1L As shown, the top interposer 160 is bonded to the bottom interposer 510, and the semiconductor die 600 and semiconductor die 700 are bonded to the bottom interposer 510. In some embodiments, the semiconductor die 600 is an application-specific integrated circuit (ASIC) die, and the semiconductor die 700 is a memory die.

[0191] The bottom interposer 510 includes a substrate 512, a through-substrate via (TSV) structure 514 formed in the substrate 512, a dielectric layer 522, and a conductive layer 524. The dielectric layer 522 is formed on the substrate 512, and the conductive layer 524 is formed in the dielectric layer 522.

[0192] The top interposer 160 is bonded to the bottom interposer 510 by bonding the conductive connectors 388. The semiconductor die 600 is bonded to the bottom interposer 510 by bonding the conductive connectors 688.

[0193] The semiconductor die 700 is bonded to the bottom interposer 510 by bonding the conductive connectors 788. The semiconductor die 700 can include a memory die in a die stack and a substrate 702 on the memory die.

[0194] The bottom interposer 510 is bonded to the substrate 1000 by bonding the conductive connectors 526, and the conductive connectors 1002 are formed under the substrate 1000.

[0195] The arrow 394 represents the general direction of the optical signal path in and between the optical fiber 370, the composite die 260, and the optical die 300, and does not necessarily represent the exact path of the optical signal propagation.

[0196] The composite die 260 includes the optical package structure 10 bonded to the electronic die 50. The composite die 260 and the optical die 300 are bonded to the top interposer 160 by a hybrid bonding structure. The composite die 260 and the optical die 300 share the top interposer 160. The optical die 300 is configured to provide light to the composite die 260 instead of from the external environment, reducing light loss and substantially improving light efficiency. In addition, the form factor of the package structure 100a is reduced.

[0197] Furthermore, the optical component 348 is formed in the optical die 300, the optical component 150 is formed in the top interposer 160, and the optical components 56 and 58 are formed in the optical package structure 10. By forming the optical components 348, 150, 56, and 58, the optical signal can be transmitted in the horizontal direction by optical coupling between adjacent optical components 348, 150, 56, and 58. The optical signal is routed in and between the optical die 300, the top interposer 160, and the composite die 260. Since the distance between two adjacent optical components 348, 150, 56, and 58 is reduced, the coupling efficiency is substantially improved. By forming the optical die adjacent to the composite die 260, the optical signal transmission rate is improved. Therefore, the performance, reliability, and yield of the package structure 100a are further improved.

[0198] FIG. 2 FIG. 1A shows a cross-sectional view of a package structure 100a according to some embodiments. The package structure 100a includes a composite die 260, an optical die 300, a semiconductor die 600, and a semiconductor die 700. The composite die 260 is bonded to the optical die 300. The semiconductor die 600 is bonded to the optical die 300. The semiconductor die 700 is bonded to the semiconductor die 600. The package structure 100a includes a bottom interposer 510. The bottom interposer 510 includes a front side interconnect structure 552 and a back side interconnect structure 554. The composite die 260, the optical die 300, the semiconductor die 600, and the semiconductor die 700 are electrically connected to the front side interconnect structure 552 and the back side interconnect structure 554 of the bottom interposer 510. FIG. 1K FIG. 2 FIG. 1B shows an enlarged cross-sectional view of a region A of the package structure 100a according to some embodiments. As shown, the optical components 56 are vertically stacked and spaced apart from each other. By forming a number of optical components 56, optical signals can be transmitted in a horizontal direction through optical coupling between adjacent optical components 56.

[0199] FIG. 3 FIG. 1C shows an enlarged cross-sectional view of a region B of the package structure 100a according to some embodiments. As shown, the optical components 58 and 150 are vertically stacked and spaced apart from each other. By forming the optical components 58 and 150, optical signals can be transmitted in a horizontal direction through optical coupling between adjacent optical components 58 and 150. FIG. 1K FIG. 3

[0200] FIG. 4 FIG. 1D shows a cross-sectional view of a package structure 100b according to some embodiments. The package structure 100b is an alternative embodiment. The package structure 100b can be similar to the package structure 100a of FIGS. 1A-1L, unless otherwise specified, where like reference symbols represent like elements formed using similar processes. The processes and materials used to form the package structure 100b can be similar to or the same as the processes and materials used to form the package structure 100a, and are not described again here.

[0201] The package structure 100b differs from the package structure 100a in that the package structure 100b includes a local silicon interconnect interposer 540 instead of the bottom interposer 510. The local silicon interconnect interposer 540 includes one or more local silicon interconnect dies 542 in a package layer 544. A front side interconnect structure 552 and a back side interconnect structure 554 are formed on a front side and a back side of the local silicon interconnect dies 542. Through holes 546 are formed through the package layer 544 and electrically connected to the front side interconnect structure 552 and the back side interconnect structure 554. The composite die 260, the optical die 300, the semiconductor die 600, and the semiconductor die 700 are bonded to the local silicon interconnect interposer 540. The composite die 260, the optical die 300, the semiconductor die 600, and the semiconductor die 700 are electrically connected to each other through the front side interconnect structure 552 and the back side interconnect structure 554 above and below the local silicon interconnect dies 542 in the local silicon interconnect interposer 540.

[0202] FIG. 5 FIG. 1E shows a cross-sectional view of a package structure 100c according to some embodiments. The package structure 100c is an alternative embodiment. The package structure 100c can be similar to the package structure 100a of FIGS. 1A-1L, unless otherwise specified, where like reference symbols represent like elements formed using similar processes. The processes and materials used to form the package structure 100c can be similar to or the same as the processes and materials used to form the package structure 100a, and are not described again here. FIG. 1A through FIG. 1L ​​​Unless otherwise specified, the similar reference numerals in the package structure 100a represent similar components formed using similar processes. The processes and materials used to form the package structure 100c may be similar to or the same as those used to form the package structure 100a, and will not be described further herein.

[0203] FIG. 5 and FIG. 1L The difference lies in that the optical array 400 is formed on the carrier substrate 360. The optical array 400 serves as the fiber optic input / output port of the packaging structure 100c. In some embodiments, the optical array 400 is an optical array unit (FAU).

[0204] The optical array 400 includes an optical fiber 410. The optical fiber 410 is surrounded by a cladding layer 404, which is further surrounded by an optical fiber shell 408. Additionally, substrates 412 and 422 are formed on the top and bottom surfaces of the optical fiber to protect the optical fiber 410. Optical adhesive 424 fills the gaps between the optical fiber 410 and the substrates 412 and 422. The optical array 400 also includes a dielectric layer 414 and mirrors 416 and optical components 418 formed within the dielectric layer 414.

[0205] In some embodiments, substrate 412 is a silicon substrate, and substrate 422 is a glass substrate. In some embodiments, dielectric layer 414 is an oxide layer.

[0206] In some embodiments, the optical component 418 includes optical waveguides (e.g., ridge waveguides, rib waveguides, buried channel waveguides, diffused waveguides, plate waveguides, etc.), couplers (e.g., grating couplers, edge couplers, etc.), optical switches (e.g., Mach-Zehnder silicon photonic switches, microelectromechanical switches, microring resonators, etc.), amplifiers, multiplexers, demultiplexers, photoelectric converters (e.g., PN junctions), electro-optic converters, lasers, combinations thereof, or the like.

[0207] FIG. 6 The diagram shows a cross-sectional view of the package structure 100d according to some embodiments. Package structure 100d is an alternative embodiment, and may be similar to... FIG. 5 Unless otherwise specified, the similar reference numerals in the package structure 100c represent similar components formed using similar processes. The processes and materials used to form the package structure 100d may be similar to or the same as those used to form the package structure 100c, and will not be described further herein.

[0208] FIG. 6 and FIG. 5The difference lies in that the optical array 400' is formed on the carrier substrate 360. The optical array 400' serves as the fiber optic input / output port of the package structure 100d. Substrates 412 and 423 are made of the same material. In some embodiments, the substrate 423 of the optical array 400' is made of a silicon substrate.

[0209] FIG. 7 The diagram shows a cross-sectional view of the package structure 100e according to some embodiments. Package structure 100e is an alternative embodiment, and may be similar to... FIG. 4 Unless otherwise specified, the similar reference numerals in the package structure 100b represent similar components formed using similar processes. The processes and materials used to form the package structure 100e may be similar to or the same as those used to form the package structure 100b, and will not be described further herein.

[0210] FIG. 7 and FIG. 4 The difference lies in that the optical array 400 is formed on the carrier substrate 360. The optical array 400 serves as the fiber optic input / output port of the packaging structure 100e.

[0211] FIG. 8 The diagram shows a cross-sectional view of the package structure 100f according to some embodiments. Package structure 100f is an alternative embodiment, and may be similar to... FIG. 7 Unless otherwise specified, the similar reference numerals in the package structure 100e represent similar components formed using similar processes. The processes and materials used to form the package structure 100f may be similar to or the same as those used to form the package structure 100e, and will not be described further herein.

[0212] FIG. 8 and FIG. 7 The difference lies in that the optical array 400' is formed on the carrier substrate 360. The optical array 400' serves as the fiber optic input / output port of the packaging structure 100f. Substrates 412 and 423 are made of the same material. In some embodiments, the substrate 423 of the optical array 400' is made of a silicon substrate.

[0213] FIG. 9 The diagram shows a cross-sectional view of the encapsulation structure 100g according to some embodiments. The encapsulation structure 100g is an alternative embodiment, and may be similar to... FIG. 5 Unless otherwise specified, the similar reference symbols in the package structure 100c represent similar components formed using similar processes. The processes and materials used to form the package structure 100g may be similar to or the same as those used to form the package structure 100c, and will not be described further herein.

[0214] FIG. 9 andFIG. 5 The difference is that a thermal electric cooler (TEC) 450 is formed on the carrier substrate 360. The thermal electric cooler 450 is formed directly on the optical die 300. The thermal electric cooler 450 is configured to transfer heat generated by the optical die 300 or the composite die 260 to an external environment. In addition, a connection structure 462 is located between the thermal electric cooler 450 and the bottom interposer 510. The connection structure 462 is configured to electrically connect the thermal electric cooler 450 and the bottom interposer 510.

[0215] The thermal electric cooler 450 includes a plurality of first regions 456 and a plurality of second regions 458 located between a first plate 452 and a second plate 454. A top substrate 460 is formed on the second plate 454. The first plate 452 and the second plate 454 are thermal conductors and electrical insulators.

[0216] In some embodiments, the first regions 456 are made of n-type semiconductor material. In some embodiments, the second regions 458 are made of p-type semiconductor material. In some embodiments, the first plate 452 and the second plate 454 are made of ceramic, such as Be2TE3, which is a thermal conductor and an electrical insulator. The alternating p-type and n-type semiconductor pillars are placed thermally in parallel to each other, electrically in series, and then connected on each side to a thermally conductive plate. When a voltage is applied to the free ends of the two semiconductors, a direct current flows through the junction of the semiconductors, creating a temperature difference. The side with the cold plate absorbs heat, which is then transported through the semiconductors to the other side of the device.

[0217] In some embodiments, when a direct current passes through the thermal electric cooler 450, heat is carried from one side to the other, causing one side to become cold and the other side to become hot. In some embodiments, the first plate 452 absorbs heat, which is then transported by the first regions 456 and the second regions 458 to the second plate 454.

[0218] FIG. 10 A cross-sectional schematic view of a package structure 100h according to some embodiments is shown. The package structure 100h is an alternative embodiment, which can be similar to the package structure 100d of FIG. 6 , unless otherwise noted, where like reference numerals refer to like elements formed using a similar process. The processes and materials used to form the package structure 100h can be similar to or the same as the processes and materials used to form the package structure 100d, and are not described in detail here.

[0219] FIG. 10 and FIG. 6The difference lies in that the thermoelectric cooler (TEC) 450 is formed on the support substrate 360. The thermoelectric cooler 450 is formed directly on the optical grain 300. The thermoelectric cooler 450 is configured to transfer the heat generated by the optical grain 300 or the composite grain 260 to the external environment.

[0220] FIG. 11 The diagram shows a cross-sectional view of the package structure 100i according to some embodiments. Package structure 100i is an alternative embodiment, and may be similar to... FIG. 7 Unless otherwise specified, the similar reference numerals in the package structure 100e represent similar components formed using similar processes. The processes and materials used to form the package structure 100i may be similar to or the same as those used to form the package structure 100e, and will not be described further herein.

[0221] FIG. 11 and FIG. 7 The difference lies in that the thermoelectric cooler (TEC) 450 is formed on the support substrate 360. The thermoelectric cooler 450 is formed directly on the optical grain 300. The thermoelectric cooler 450 is configured to transfer the heat generated by the optical grain 300 or the composite grain 260 to the external environment.

[0222] FIG. 12 The diagram shows a cross-sectional view of the package structure 100j according to some embodiments. Package structure 100j is an alternative embodiment, and may be similar to... FIG. 8 Unless otherwise specified, the similar reference numerals in the package structure 100f represent similar components formed using similar processes. The processes and materials used to form the package structure 100j may be similar to or the same as those used to form the package structure 100f, and will not be described further herein.

[0223] FIG. 12 and FIG. 8 The difference lies in that the thermoelectric cooler (TEC) 450 is formed on the support substrate 360. The thermoelectric cooler 450 is formed directly on the optical grain 300. The thermoelectric cooler 450 is configured to transfer the heat generated by the optical grain 300 or the composite grain 260 to the external environment.

[0224] FIG. 13 The diagram shows a cross-sectional view of the package structure 200a according to some embodiments. Package structure 200a is an alternative embodiment, and may be similar to... FIG. 1A through FIG. 1L Unless otherwise specified, the similar reference numerals in the package structure 100a represent similar components formed using similar processes. The processes and materials used to form the package structure 200a may be similar to or the same as those used to form the package structure 100a, and will not be described further herein.

[0225] FIG. 13 and FIG. 1L The difference lies in that the top intermediate layer 160 includes a substrate through-hole (TSV) structure 126 formed in the substrate 122. It should be noted that in the previous embodiment (e.g., FIG. 1A through FIG. 12 Remove base 122, but FIG. 13 Preserve substrate 122.

[0226] FIG. 14 The diagram shows a cross-sectional view of the package structure 200b according to some embodiments. Package structure 200b is an alternative embodiment, and may be similar to... FIG. 4 Unless otherwise specified, the similar reference numerals in the package structure 100b represent similar components formed using similar processes. The processes and materials used to form the package structure 200b may be similar to or the same as those used to form the package structure 100b, and will not be described further herein.

[0227] FIG. 14 and FIG. 4 The difference lies in that the top intermediate layer 160 includes a substrate through-hole (TSV) structure 126 formed in the substrate 122.

[0228] FIG. 15 The diagram shows a cross-sectional view of the package structure 200c according to some embodiments. Package structure 200c is an alternative embodiment, and may be similar to... FIG. 13 Unless otherwise specified, the similar reference numerals in the package structure 200a represent similar components formed using similar processes. The processes and materials used to form the package structure 200c may be similar to or the same as those used to form the package structure 200a, and will not be described further herein.

[0229] FIG. 15 and FIG. 13 The difference lies in that the optical array 400 is formed on the carrier substrate 360. The optical array 400 serves as the fiber optic input / output port for the packaging structure 200c.

[0230] FIG. 16 The diagram shows a cross-sectional view of the package structure 200d according to some embodiments. Package structure 200d is an alternative embodiment, and may be similar to... FIG. 13 Unless otherwise specified, the similar reference numerals in the package structure 200a represent similar components formed using similar processes. The processes and materials used to form the package structure 200d may be similar to or the same as those used to form the package structure 200a, and will not be described further herein.

[0231] FIG. 16 and FIG. 13The difference lies in that the optical array 400' is formed on the carrier substrate 360. The optical array 400' serves as the fiber optic input / output port of the packaging structure 200d. Substrates 412 and 423 are made of the same material. In some embodiments, the substrate 423 of the optical array 400' is made of a silicon substrate.

[0232] FIG. 17 The diagram shows a cross-sectional view of the package structure 200e according to some embodiments. Package structure 200e is an alternative embodiment, and may be similar to... FIG. 14 Unless otherwise specified, the similar reference numerals in the package structure 200b represent similar components formed using similar processes. The processes and materials used to form the package structure 200e may be similar to or the same as those used to form the package structure 200b, and will not be described further herein.

[0233] FIG. 17 and FIG. 14 The difference lies in that the optical array 400 is formed on the carrier substrate 360. The optical array 400 serves as the fiber optic input / output port for the packaging structure 200e.

[0234] FIG. 18 The diagram shows a cross-sectional view of the package structure 200f according to some embodiments. Package structure 200f is an alternative embodiment, and may be similar to... FIG. 14 Unless otherwise specified, the similar reference numerals in the package structure 200b represent similar components formed using similar processes. The processes and materials used to form the package structure 200f may be similar to or the same as those used to form the package structure 200b, and will not be described further herein.

[0235] FIG. 18 and FIG. 14 The difference lies in that the optical array 400' is formed on the carrier substrate 360. The optical array 400' serves as the fiber optic input / output port of the packaging structure 200f. Substrates 412 and 423 are made of the same material. In some embodiments, the substrate 423 of the optical array 400' is made of a silicon substrate.

[0236] FIG. 19 The diagram shows a cross-sectional view of the encapsulation structure 200g according to some embodiments. The encapsulation structure 200g is an alternative embodiment, and may be similar to... FIG. 15 Unless otherwise specified, the similar reference numerals in the package structure 200c represent similar components formed using similar processes. The processes and materials used to form the package structure 200g may be similar to or the same as those used to form the package structure 200c, and will not be described further herein.

[0237] FIG. 19 andFIG. 15 The difference lies in that the thermoelectric cooler (TEC) 450 is formed on the support substrate 360. The thermoelectric cooler 450 is formed directly on the optical grain 300. The thermoelectric cooler 450 is configured to transfer the heat generated by the optical grain 300 or the composite grain 260 to the external environment.

[0238] FIG. 20 The diagram shows a cross-sectional view of the packaging structure 200h according to some embodiments. The packaging structure 200h is an alternative embodiment, and may be similar to... FIG. 16 Unless otherwise specified, the similar reference numerals in the package structure 200d represent similar components formed using similar processes. The processes and materials used to form the package structure 200h may be similar to or the same as those used to form the package structure 200d, and will not be described further herein.

[0239] FIG. 20 and FIG. 16 The difference lies in that the thermoelectric cooler (TEC) 450 is formed on the support substrate 360. The thermoelectric cooler 450 is formed directly on the optical grain 300. The thermoelectric cooler 450 is configured to transfer the heat generated by the optical grain 300 or the composite grain 260 to the external environment.

[0240] FIG. 21 The diagram shows a cross-sectional view of the package structure 200i according to some embodiments. Package structure 200i is an alternative embodiment, and may be similar to... FIG. 17 Unless otherwise specified, the similar reference numerals in the package structure 200e represent similar components formed using similar processes. The processes and materials used to form the package structure 200i may be similar to or the same as those used to form the package structure 200i, and will not be described further herein.

[0241] FIG. 21 and FIG. 17 The difference lies in that the thermoelectric cooler (TEC) 450 is formed on the support substrate 360. The thermoelectric cooler 450 is formed directly on the optical grain 300. The thermoelectric cooler 450 is configured to transfer the heat generated by the optical grain 300 or the composite grain 260 to the external environment.

[0242] FIG. 22 The diagram shows a cross-sectional view of the package structure 200j according to some embodiments. Package structure 200j is an alternative embodiment, and may be similar to... FIG. 18 Unless otherwise specified, the similar reference numerals in the package structure 200f represent similar components formed using similar processes. The processes and materials used to form the package structure 200j may be similar to or the same as those used to form the package structure 200f, and will not be described further herein.

[0243] FIG. 22 and FIG. 18 The difference between the package structure 300 and the package structure 100 is that a thermoelectric cooler (TEC) 450 is formed on the carrier substrate 360. The thermoelectric cooler 450 is formed directly on the optical die 300. The thermoelectric cooler 450 is configured to transfer heat generated by the optical die 300 or the compound die 260 to an external environment.

[0244] FIG. 23 A cross-sectional schematic view of a package structure 300a is shown in accordance with some embodiments. The package structure 300a is an alternative embodiment, which can be similar to the package structure 100a of FIG. 1A through FIG. 1L , unless otherwise specified, where like reference numerals represent like elements formed using a similar process. The processes and materials used to form the package structure 300a can be similar to or the same as those used to form the package structure 100a, and are not described in detail here.

[0245] FIG. 23 and FIG. 1L The difference between the package structure 300 and the package structure 100 is that an optical glue 351 is between the optical die 300 and the compound die 260. The via 332 and the optical component 348 are formed in the dielectric layer 342. The via 60 and the optical component 56 are formed in the dielectric layer 52. In some embodiments, the refractive index of the optical glue 351 is closer to the refractive index of the dielectric layer 342. In some embodiments, the refractive index of the optical component 348 is greater than the refractive index of the optical glue 351 and the dielectric layer 342, and light can be confined in the optical component 348.

[0246] By forming the optical components 348 and 56, optical signals can be transmitted in a horizontal direction through optical coupling between adjacent optical components 348 and 56. Optical signals exiting the optical component 348 are directed to the optical component 56.

[0247] The arrows 394 represent the general direction of the path of the optical signals in and between the optical fiber 370, the compound die 260, and the optical die 300, and do not necessarily represent the exact path of the propagation of the optical signals. The optical signals can be transmitted from the optical component 348 through the optical glue 351, and then to the optical component 56.

[0248] FIG. 24 A cross-sectional schematic view of a package structure 300b is shown in accordance with some embodiments. The package structure 300b is an alternative embodiment, which can be similar to the package structure 100b of FIG. 4 , unless otherwise specified, where like reference numerals represent like elements formed using a similar process. The processes and materials used to form the package structure 300b can be similar to or the same as those used to form the package structure 100b, and are not described in detail here.

[0249] FIG. 24 and FIG. 4 The difference lies in the location of optical adhesive 351 between optical grain 300 and composite grain 260. Via 332 and optical component 348 are formed in dielectric layer 342. Via 60 and optical component 56 are formed in dielectric layer 52.

[0250] By forming optical components 348 and 56, optical signals can be transmitted horizontally through optical coupling between adjacent optical components 348 and 56. Optical signals leaving optical component 348 are guided to optical component 56.

[0251] FIG. 25 The diagram shows a cross-sectional view of the package structure 300c according to some embodiments. Package structure 300c is an alternative embodiment, and may be similar to... FIG. 23 Unless otherwise specified, the similar reference numerals in the package structure 300a represent similar components formed using similar processes. The processes and materials used to form the package structure 300c may be similar to or the same as those used to form the package structure 300a, and will not be described further herein.

[0252] FIG. 25 and FIG. 23 The difference lies in that the optical array 400 is formed on the carrier substrate 360. The optical array 400 serves as the fiber optic input / output port for the packaging structure 300c.

[0253] FIG. 26 The diagram shows a cross-sectional view of the package structure 300d according to some embodiments. The package structure 300d is an alternative embodiment and may be similar to... FIG. 23 Unless otherwise specified, the similar reference numerals in the package structure 300a represent similar components formed using similar processes. The processes and materials used to form the package structure 300d may be similar to or the same as those used to form the package structure 300a, and will not be described further herein.

[0254] FIG. 26 and FIG. 23 The difference lies in that the optical array 400' is formed on the carrier substrate 360. The optical array 400' serves as the fiber optic input / output port of the package structure 300d. Substrates 412 and 423 are made of the same material. In some embodiments, the substrate 423 of the optical array 400' is made of a silicon substrate.

[0255] FIG. 27 The diagram shows a cross-sectional view of the package structure 300e according to some embodiments. Package structure 300e is an alternative embodiment, and may be similar to... FIG. 24Unless otherwise specified, the similar reference numerals in the package structure 300b represent similar components formed using similar processes. The processes and materials used to form the package structure 300e may be similar to or the same as those used to form the package structure 300b, and will not be described further herein.

[0256] FIG. 27 and FIG. 24 The difference lies in that the optical array 400 is formed on the carrier substrate 360. The optical array 400 serves as the fiber optic input / output port for the packaging structure 300e.

[0257] FIG. 28 The diagram shows a cross-sectional view of the package structure 300f according to some embodiments. Package structure 300f is an alternative embodiment, and may be similar to... FIG. 24 Unless otherwise specified, the similar reference numerals in the package structure 300b represent similar components formed using similar processes. The processes and materials used to form the package structure 300f may be similar to or the same as those used to form the package structure 300b, and will not be described further herein.

[0258] FIG. 28 and FIG. 24 The difference lies in that the optical array 400' is formed on the carrier substrate 360. The optical array 400' serves as the fiber optic input / output port of the packaging structure 300f. Substrates 412 and 423 are made of the same material. In some embodiments, the substrate 423 of the optical array 400' is made of a silicon substrate.

[0259] FIG. 29 The diagram shows a cross-sectional view of the encapsulation structure 300g according to some embodiments. The encapsulation structure 300g is an alternative embodiment, and may be similar to... FIG. 25 Unless otherwise specified, the similar reference numerals in the package structure 300c represent similar components formed using similar processes. The processes and materials used to form the package structure 300g may be similar to or the same as those used to form the package structure 300c, and will not be described further herein.

[0260] FIG. 29 and FIG. 25 The difference lies in that the thermoelectric cooler (TEC) 450 is formed on the support substrate 360. The thermoelectric cooler 450 is formed directly on the optical grain 300. The thermoelectric cooler 450 is configured to transfer the heat generated by the optical grain 300 or the composite grain 260 to the external environment.

[0261] FIG. 30 The diagram shows a cross-sectional view of the packaging structure 300h according to some embodiments. The packaging structure 300h is an alternative embodiment, and may be similar to... FIG. 26Unless otherwise specified, the similar reference numerals in the package structure 300d represent similar components formed using similar processes. The processes and materials used to form the package structure 300h may be similar to or the same as those used to form the package structure 300d, and will not be described further herein.

[0262] FIG. 30 and FIG. 26 The difference lies in that the thermoelectric cooler (TEC) 450 is formed on the support substrate 360. The thermoelectric cooler 450 is formed directly on the optical grain 300. The thermoelectric cooler 450 is configured to transfer the heat generated by the optical grain 300 or the composite grain 260 to the external environment.

[0263] FIG. 31 The diagram shows a cross-sectional view of the package structure 300i according to some embodiments. Package structure 300i is an alternative embodiment, and may be similar to... FIG. 27 Unless otherwise specified, the similar reference numerals in the package structure 300e represent similar components formed using similar processes. The processes and materials used to form the package structure 300i may be similar to or the same as those used to form the package structure 300e, and will not be described further herein.

[0264] FIG. 31 and FIG. 27 The difference lies in that the thermoelectric cooler (TEC) 450 is formed on the support substrate 360. The thermoelectric cooler 450 is formed directly on the optical grain 300. The thermoelectric cooler 450 is configured to transfer the heat generated by the optical grain 300 or the composite grain 260 to the external environment.

[0265] FIG. 32 The diagram shows a cross-sectional view of the package structure 300j according to some embodiments. Package structure 300j is an alternative embodiment, and may be similar to... FIG. 28 Unless otherwise specified, the similar reference numerals in the package structure 300f represent similar components formed using similar processes. The processes and materials used to form the package structure 300j may be similar to or the same as those used to form the package structure 300f, and will not be described further herein.

[0266] FIG. 32 and FIG. 28 The difference lies in that the thermoelectric cooler (TEC) 450 is formed on the support substrate 360. The thermoelectric cooler 450 is formed directly on the optical grain 300. The thermoelectric cooler 450 is configured to transfer the heat generated by the optical grain 300 or the composite grain 260 to the external environment.

[0267] FIG. 33A cross-sectional schematic view of a package structure 400a is shown in accordance with some embodiments. The package structure 400a is an alternative embodiment, which can be similar to the package structure 100a FIG. 1A through FIG. 1L , unless otherwise noted, where like reference numerals represent like elements formed using a similar process. The processes and materials used to form the package structure 400a can be similar to or the same as the processes and materials used to form the package structure 100a, and are not described in detail here.

[0268] FIG. 33 and FIG. 1L The difference between the package structure 400a and the package structure 100a is that a bridge structure 470 is formed on the carrier substrate 360. The bridge structure 470 is configured to transmit optical signals from the optical die 300 to the hybrid die 260. Light can be transmitted from the optical die 300 to the hybrid die 260 through the bridge structure 470.

[0269] The bridge structure 470 includes a dielectric layer 476 between a substrate 472 and a substrate 474. An optical component 478 and a mirror 480 are formed in the dielectric layer 476. An optical glue 484 is between the substrate 472 and the carrier substrate 360. In some embodiments, the substrate 472 and the substrate 474 are made of glass. Light is transmitted in the optical component 478 having a high refractive index material in the dielectric layer 476 having a low refractive index material. In addition, the dielectric layer 476 is wrapped by the substrate 472 and the substrate 474, and the substrate 472 and 474 are configured to provide support.

[0270] The optical component 478 can include an optical waveguide (e.g., a ridge waveguide, a rib waveguide, a buried channel waveguide, a diffused waveguide, a slab waveguide, etc.), a coupler (e.g., a grating coupler, an edge coupler, etc.), an optical switch (e.g., a Mach-Zehnder silicon photonic switch, a micro-electro-mechanical switch, a micro-ring resonator, etc.), an amplifier, a multiplexer, a demultiplexer, an opto-electric converter (e.g., a PN junction), an electro-optic converter, a laser, a combination of the foregoing, or the like. In some embodiments, the optical component 478 includes an optical waveguide, and the optical waveguide is made of SiN. In some embodiments, the bridge structure 470 includes a waveguide.

[0271] The arrows 394 represent the general direction of the path of the optical signals in and between the optical fiber 370, the hybrid die 260, and the optical die 300, and do not necessarily represent the exact path of the propagation of the optical signals.

[0272] FIG. 34 A cross-sectional schematic view of a package structure 400b is shown in accordance with some embodiments. The package structure 400b is an alternative embodiment, which can be similar to the package structure 100a FIG. 33Unless otherwise specified, the similar reference numerals in the package structure 400a represent similar components formed using similar processes. The processes and materials used to form the package structure 400b may be similar to or the same as those used to form the package structure 400a, and will not be described further herein.

[0273] FIG. 34 and FIG. 33 The difference lies in that the bridging structure 470' is formed on the carrier substrate 360. The bridging structure 470' includes a semiconductor substrate 472 (e.g., a silicon substrate) between dielectric layers 476 and 477. Optical components 478 and a mirror 480 are formed in the dielectric layer 477. Optical adhesive 484 is located between the dielectric layer 476 and the carrier substrate 360. A lens 486 is formed in the semiconductor substrate 472.

[0274] FIG. 35 The diagram shows a cross-sectional view of the package structure 400c according to some embodiments. Package structure 400c is an alternative embodiment and may be similar to... FIG. 4 Unless otherwise specified, the similar reference numerals in the package structure 100b represent similar components formed using similar processes. The processes and materials used to form the package structure 400c may be similar to or the same as those used to form the package structure 100b, and will not be described further herein.

[0275] FIG. 35 and FIG. 4 The difference lies in the fact that the bridging structure 470 is formed on the supporting substrate 360.

[0276] FIG. 36 The diagram shows a cross-sectional view of the package structure 400d according to some embodiments. Package structure 400d is an alternative embodiment and may be similar to... FIG. 35 Unless otherwise specified, the similar reference numerals in the package structure 400c represent similar components formed using similar processes. The processes and materials used to form the package structure 400d may be similar to or the same as those used to form the package structure 400c, and will not be described further herein.

[0277] FIG. 36 and FIG. 35 The difference lies in the fact that bridging structure 470' replaces bridging structure 470.

[0278] FIG. 37 The diagram shows a cross-sectional view of the package structure 400e according to some embodiments. Package structure 400e is an alternative embodiment, and may be similar to... FIG. 33Unless otherwise specified, the similar reference numerals in the package structure 400a represent similar components formed using similar processes. The processes and materials used to form the package structure 400e may be similar to or the same as those used to form the package structure 400a, and will not be described further herein.

[0279] FIG. 37 and FIG. 33 The difference is that the optical array 400 is formed on the substrate 360, and the thermoelectric cooler 450 is formed on the substrate 360 ​​and the semiconductor die 600.

[0280] FIG. 38 The diagram shows a cross-sectional view of the package structure 400f according to some embodiments. Package structure 400f is an alternative embodiment, and may be similar to... FIG. 34 Unless otherwise specified, the similar reference numerals in the package structure 400b represent similar components formed using similar processes. The processes and materials used to form the package structure 400f may be similar to or the same as those used to form the package structure 400b, and will not be described further herein.

[0281] FIG. 38 and FIG. 33 The difference is that the optical array 400 is formed on the substrate 360, and the thermoelectric cooler 450 is formed on the substrate 360 ​​and the semiconductor die 600.

[0282] FIG. 39 The diagram shows a cross-sectional view of the encapsulation structure 400g according to some embodiments. The encapsulation structure 400g is an alternative embodiment, and may be similar to... FIG. 35 Unless otherwise specified, the similar reference numerals in the package structure 400c represent similar components formed using similar processes. The processes and materials used to form the package structure 400g may be similar to or the same as those used to form the package structure 400c, and will not be described further herein.

[0283] FIG. 39 and FIG. 35 The difference is that the optical array 400 is formed on the substrate 360, and the thermoelectric cooler 450 is formed on the substrate 360 ​​and the semiconductor die 600.

[0284] FIG. 40 The diagram shows a cross-sectional view of the package structure 400h according to some embodiments. Package structure 400h is an alternative embodiment, and may be similar to... FIG. 36Unless otherwise specified, the similar reference numerals in the package structure 400d represent similar components formed using similar processes. The processes and materials used to form the package structure 400h may be similar to or the same as those used to form the package structure 400d, and will not be described further herein.

[0285] FIG. 40 and FIG. 36 The difference is that the optical array 400 is formed on the substrate 360, and the thermoelectric cooler 450 is formed on the substrate 360 ​​and the semiconductor die 600.

[0286] FIG. 41 The diagram shows a cross-sectional view of package structure 400i according to some embodiments. Package structure 400i is an alternative embodiment, and package structure 400i may be similar to... FIG. 37 Unless otherwise specified, the similar reference numerals in the package structure 400e represent similar components formed using similar processes. The processes and materials used to form the package structure 400i may be similar to or the same as those used to form the package structure 400e, and will not be described further herein.

[0287] FIG. 41 and FIG. 37 The difference lies in the fact that the optical array 400' is formed on the supporting substrate 360.

[0288] FIG. 42 The diagram shows a cross-sectional view of the package structure 400j according to some embodiments. Package structure 400j is an alternative embodiment, and may be similar to... FIG. 38 Unless otherwise specified, the similar reference numerals in the package structure 400f represent similar components formed using similar processes. The processes and materials used to form the package structure 400j may be similar to or the same as those used to form the package structure 400f, and will not be described further herein.

[0289] FIG. 42 and FIG. 38 The difference lies in the fact that the optical array 400' is formed on the supporting substrate 360.

[0290] FIG. 43 The diagram shows a cross-sectional view of the package structure 400k according to some embodiments. The package structure 400k is an alternative embodiment, and may be similar to... FIG. 39 The package structure 400g, unless otherwise specified, refers to similar components formed using similar processes. The processes and materials used to form the package structure 400k may be similar to or the same as those used to form the package structure 400g, and will not be described further herein.

[0291] FIG. 43 andFIG. 39 The difference between the optical array 400' and the optical array 400 is that the optical array 400' is formed on the carrier substrate 360.

[0292] FIG. 44 A cross-sectional schematic view of a package structure 4001 is shown in accordance with some embodiments. The package structure 4001 is an alternative embodiment, which can be similar to the package structure 400h of FIG. 40 , unless otherwise indicated, where like reference numerals represent like elements formed using a similar process. The processes and materials used to form the package structure 4001 can be similar to or the same as those used to form the package structure 400h, and are not described in detail here.

[0293] FIG. 44 and FIG. 40 The difference between the optical array 400' and the optical array 400 is that the optical array 400' is formed on the carrier substrate 360.

[0294] FIG. 45A , FIG. 45B , FIG. 45C , FIG. 45D , FIG. 45E , FIG. 45F , FIG. 45G , FIG. 45H , FIG. 45I , FIG. 45J , FIG. 45K , FIG. 45L A cross-sectional schematic view of stages in fabricating a package structure 500a is shown in accordance with some embodiments.

[0295] As shown in FIG. 45A , a substrate 802 is provided. The substrate 802 can be a semiconductor wafer, such as a silicon wafer. Alternatively or additionally, the substrate 12 can include elemental semiconductor materials, compound semiconductor materials, and / or alloy semiconductor materials. Elemental semiconductor materials can include, but are not limited to, crystalline silicon, polycrystalline silicon, amorphous silicon, germanium, and / or diamond. Compound semiconductor materials can include, but are not limited to, silicon carbide, gallium arsenide, gallium phosphide, indium phosphide, indium arsenide, and / or indium antimonide. Alloy semiconductor materials can include, but are not limited to, SiGe, GaAsP, AlInAs, AlGaAs, GaInAs, GaInP, and / or GaInAsP.

[0296] Next, as shown in FIG. 45B , an optical component 810 is formed by etching a portion of the substrate 802 in accordance with some embodiments. Then, a dielectric layer 812 is formed on the optical component 810. In some embodiments, the optical component 810 includes a waveguide 804, a coupler 806, a modulator 808, and a germanium modulator 809.

[0297] After that, as shown in FIG. 45CAs shown, dielectric layer 822 is formed on dielectric layer 812, and conductive layer 824 is formed in dielectric layer 822. Next, dielectric layer 826 is formed on dielectric layer 822, and optical component 828 and reflector 830 are formed in dielectric layer 826.

[0298] Optical component 828 may include optical waveguides (e.g., ridge waveguides, rib waveguides, buried channel waveguides, diffused waveguides, plate waveguides, etc.), couplers (e.g., grating couplers, edge couplers, etc.), optical switches (e.g., Mach-Zehnder silicon photonic switches, microelectromechanical switches, microring resonators, etc.), amplifiers, multiplexers, demultiplexers, photoelectric converters (e.g., PN junctions), electro-optic converters, lasers, combinations thereof, or the like. In some embodiments, optical component 828 includes optical waveguides, and the optical waveguides are made of SiN.

[0299] A mirror 830 formed in the dielectric layer 826 is configured to reflect light from the optical component 828 to the optical die 300 and the composite die 260. Therefore, light can be transmitted from the horizontal direction to the vertical direction through the mirror 830.

[0300] Next, based on some embodiments, such as FIG. 45D As shown, conductive pad 834 is formed in dielectric layer 822.

[0301] Subsequently, based on some embodiments, such as FIG. 45E FIG. 45F FIG. 45G FIG. 45H FIG. 45I FIG. 45J FIG. 45K FIG. 45L As shown, another substrate 842 is provided, and a memory layer 844 is formed on the substrate 842, and a dielectric layer 848 is formed on the memory layer 844. A substrate via (TSV) structure 846 is formed through the substrate 842. A conductive layer 850 and a conductive pad 852 are formed in the dielectric layer 848.

[0302] Next, FIG. 45D The structure shown is flipped over and faces conductive pad 852, with conductive pad 834 facing conductive pad 852, for use in a hybrid bonding process.

[0303] Next, based on some embodiments, such as FIG. 45F As shown, conductive pad 834 is bonded to conductive pad 852 via a hybrid bonding process. Substrate 802 is then removed to expose optical component 810. The hybrid bonding process includes bonding conductive pad 852 to conductive pad 834 and bonding dielectric layer 826 to dielectric layer 848.

[0304] Subsequently, based on some embodiments, such as FIG. 45G As shown, a through-substrate via (TSV) structure 856 is formed in the dielectric layer 812.

[0305] Next, based on some embodiments, such as FIG. 45HAs shown, a dielectric layer 862 is formed on the dielectric layer 812, and a conductive pad 858 is formed in the dielectric layer 862. Next, an under bump metallization layer 863 is formed on the conductive pad 858, and a conductive connector 864 is formed on the dielectric layer 862 to form a bottom interposer 880. In some embodiments, the bottom interposer 880 is a high performance interposer. In some embodiments, the bottom interposer 880 is a wafer level interposer.

[0306] The under bump metallization layer 863 can contain an adhesion layer and / or a wetting layer. In some embodiments, the under bump metallization layer 863 is formed of titanium (Ti), titanium nitride (TiN), tantalum nitride (TaN), tantalum (Ta), or the like. In some embodiments, the under bump metallization layer 863 further includes a copper seed layer. In some embodiments, the under bump metallization layer 863 is formed by electroplating, electroless plating, a chemical vapor deposition (CVD) process, a physical vapor deposition process, or other applicable processes.

[0307] The conductive connector 864 is made of a solder material, such as tin (Sn), tin-silver (SnAg), tin-lead (SnPb), tin-copper (SnCu), tin-silver-copper (SnAgCu), tin-silver-zinc (SnAgZn), tin-zinc (SnZn), tin-bismuth-indium (SnBiIn), tin-indium (SnIn), tin-gold (SnAu), tin-zinc-indium (SnZnIn), tin-silver-antimony (SnAgSb), or other applicable materials. In some embodiments, the conductive connector 864 is formed by electroplating, electroless plating, printing, a chemical vapor deposition (CVD) process, a physical vapor deposition process, or other applicable processes.

[0308] Next, as shown in FIG. 8B, the composite die 260, the optical die 300, the semiconductor die 600, and the semiconductor die 700 are bonded to the bottom interposer 880. The composite die 260 is bonded to the bottom interposer 880 by bonding the conductive connector 388, the semiconductor die 600 is bonded to the bottom interposer 880 by bonding the conductive connector 688, and the semiconductor die 700 is bonded to the bottom interposer 880 by bonding the conductive connector 788. FIG. 45I A package layer 372 is formed around the composite die 260, and a bottom fill layer 792 is formed around the bonded conductive connector 388, the bonded conductive connector 688, and the bonded conductive connector 788.

[0309] Next, as shown in FIG. 8C, a package layer 794 is formed on the bottom fill layer 792, the composite die 260, the semiconductor die 600, and the semiconductor die 700.

[0310] FIG. 45J

[0311] ​​Subsequently, based on some embodiments, such as FIG. 45K As shown, the back side of substrate 842 is removed to expose the through-substrate via (TSV) structure 846. A conductive connector 870 is then formed beneath the through-substrate via structure 846.

[0312] Next, based on some embodiments, such as FIG. 45L As shown, a portion of the encapsulation layer 794 is removed to expose the carrier substrate 360. This results in the encapsulation structure 500a.

[0313] like FIG. 45L As shown, optical die 300 and composite die 260 are formed on top interposer 160, and top interposer 160, semiconductor die 600 and semiconductor die 700 are bonded to bottom interposer 880. Bottom interposer 880 includes optical component 810 formed in dielectric layer 812, and memory layer 844 is formed above substrate 842.

[0314] FIG. 46 The diagram shows a cross-sectional view of the package structure 500b according to some embodiments. Package structure 500b is an alternative embodiment and may be similar to... FIG. 45L Unless otherwise specified, the similar reference numerals in the package structure 500a represent similar components formed using similar processes. The processes and materials used to form the package structure 500b may be similar to or the same as those used to form the package structure 500a, and will not be described further herein.

[0315] According to some embodiments, FIG. 46 and FIG. 45L The difference lies in that the optical array 400 and the bridging structure 470 are formed on the support substrate 360, and the thermoelectric cooler 450 is formed on the optical grain 300.

[0316] FIG. 47 The diagram shows a cross-sectional view of the package structure 500c according to some embodiments. Package structure 500c is an alternative embodiment, and may be similar to... FIG. 46 Unless otherwise specified, the similar reference numerals in the package structure 500b represent similar components formed using similar processes. The processes and materials used to form the package structure 500c may be similar to or the same as those used to form the package structure 500b, and will not be described further herein.

[0317] According to some embodiments, FIG. 47 and FIG. 46 The difference lies in the fact that the bridging structure 470' is formed on the optical grain 300.

[0318] FIG. 48The diagram shows a cross-sectional view of the package structure 500d according to some embodiments. Package structure 500d is an alternative embodiment, and may be similar to... FIG. 46 Unless otherwise specified, the similar reference numerals in the package structure 500b represent similar components formed using similar processes. The processes and materials used to form the package structure 500d may be similar to or the same as those used to form the package structure 500b, and will not be described further herein.

[0319] According to some embodiments, FIG. 48 and FIG. 46 The difference lies in the fact that the optical array 400' is formed on the supporting substrate 360.

[0320] FIG. 49 The diagram shows a cross-sectional view of the package structure 500e according to some embodiments. Package structure 500e is an alternative embodiment, and may be similar to... FIG. 48 Unless otherwise specified, the similar reference numerals in the package structure 500d represent similar components formed using similar processes. The processes and materials used to form the package structure 500e may be similar to or the same as those used to form the package structure 500d, and will not be described further herein.

[0321] According to some embodiments, FIG. 49 and FIG. 48 The difference lies in the fact that the bridging structure 470' is formed on the optical grain 300.

[0322] FIG. 50 The diagram shows a cross-sectional view of the package structure 500f according to some embodiments. Package structure 500f is an alternative embodiment, and package structure 500f may be similar to... FIG. 45L Unless otherwise specified, the similar reference numerals in the package structure 500a represent similar components formed using similar processes. The processes and materials used to form the package structure 500f may be similar to or the same as those used to form the package structure 500a, and will not be described further herein.

[0323] According to some embodiments, FIG. 50 and FIG. 45L The difference lies in that the bridging structure 470 is formed on the supporting substrate 360, and the thermoelectric cooler 450 is formed on the optical grain 300.

[0324] FIG. 51 The diagram shows a cross-sectional view of the encapsulation structure 500g according to some embodiments. The encapsulation structure 500g is an alternative embodiment, and may be similar to... FIG. 50Unless otherwise specified, the similar reference numerals in the package structure 500f represent similar components formed using similar processes. The processes and materials used to form the package structure 500g may be similar to or the same as those used to form the package structure 500f, and will not be described further herein.

[0325] According to some embodiments, FIG. 51 and FIG. 50 The difference lies in the fact that the bridging structure 470' is formed on the supporting substrate 360.

[0326] FIG. 52A The diagram shows a top view of the encapsulation structure 600a according to some embodiments. FIG. 52B The display is based on some embodiments, along FIG. 52A The diagram shows a cross-sectional view of the packaging structure along line A-A'. FIG. 52C The display is based on some embodiments, along FIG. 52A The diagram shows a cross-sectional view of the packaging structure along line B-B'.

[0327] According to some embodiments, such as FIG. 52A and FIG. 52B As shown, a plurality of semiconductor dies 600 are formed on a local silicon interconnect interposer 540 along a first direction (e.g., line A-A').

[0328] According to some embodiments, such as FIG. 52A and FIG. 52C As shown, optical die 300 and composite die 260 are bonded to the top interposer 160 to form a connecting die 366. A plurality of connecting dies 366 are arranged along a second direction (line B-B') and form a bridging structure 470' to connect two adjacent connecting dies 366. Semiconductor die 600 is adjacent to the connecting die 366. Semiconductor die 600 and another connecting die 366 are formed on either side of one of the connecting dies 366.

[0329] FIG. 53A The diagram shows a top view of the package structure 600b according to some embodiments. FIG. 53B The display is based on some embodiments, along FIG. 53A The diagram shows a cross-sectional view of the packaging structure along line A-A'. FIG. 53C The display is based on some embodiments, along FIG. 53A The diagram shows a cross-sectional view of the packaging structure along line B-B'.

[0330] Package structure 600b is an alternative embodiment, and package structure 600b may be similar to... FIG. 52A , FIG. 52B , FIG. 52CUnless otherwise specified, the similar reference numerals in the package structure 600a represent similar components formed using similar processes. The processes and materials used to form the package structure 600b may be similar to or the same as those used to form the package structure 600a, and will not be described further herein.

[0331] FIG. 53A , FIG. 53B , FIG. 53C and FIG. 52A , FIG. 52B , FIG. 52C The difference lies in replacing the bridging structure 470' with the bridging structure 470.

[0332] FIG. 54A The diagram shows a top view of the package structure 600c according to some embodiments. FIG. 54B The display is based on some embodiments, along FIG. 54A The diagram shows a cross-sectional view of the packaging structure along line A-A'. FIG. 54C The display is based on some embodiments, along FIG. 54A The diagram shows a cross-sectional view of the packaging structure along line B-B'.

[0333] Package structure 600c is an alternative embodiment, and package structure 600c may be similar to... FIG. 52A , FIG. 52B , FIG. 52C Unless otherwise specified, the similar reference numerals in the package structure 600a represent similar components formed using similar processes. The processes and materials used to form the package structure 600c may be similar to or the same as those used to form the package structure 600a, and will not be described further herein.

[0334] FIG. 54A , FIG. 54B , FIG. 54C and FIG. 52A , FIG. 52B , FIG. 52C The difference lies in replacing the bridging structure 470' with fiber optic cable 370.

[0335] FIG. 55A The image shows a top view of the package structure 600d according to some embodiments. FIG. 55B The display is based on some embodiments, along FIG. 55A The diagram shows a cross-sectional view of the packaging structure along line A-A'. FIG. 55C The display is based on some embodiments, along FIG. 55A The diagram shows a cross-sectional view of the packaging structure along line B-B'.

[0336] Package structure 600d is an alternative embodiment, and package structure 600d can be similar to... FIG. 52A , FIG. 52B , FIG. 52CUnless otherwise specified, the similar reference numerals in the package structure 600a represent similar components formed using similar processes. The processes and materials used to form the package structure 600d may be similar to or the same as those used to form the package structure 600a, and will not be described further herein.

[0337] FIG. 55A , FIG. 55B , FIG. 55C and FIG. 52A , FIG. 52B , FIG. 52C The difference lies in replacing the bottom interposer 540 with a bottom interposer 880. The bottom interposer 880 is formed on the substrate 874, and the conductive connector 876 is formed below the substrate 874.

[0338] FIG. 56A The diagram shows a top view of the package structure 600e according to some embodiments. FIG. 56B The display is based on some embodiments, along FIG. 56A The diagram shows a cross-sectional view of the packaging structure along line A-A'. FIG. 56C The display is based on some embodiments, along FIG. 56A The diagram shows a cross-sectional view of the packaging structure along line B-B'.

[0339] Package structure 600e is an alternative embodiment, and package structure 600e may be similar to... FIG. 55A , FIG. 55B , FIG. 55C Unless otherwise specified, the similar reference numerals in the package structure 600d represent similar components formed using similar processes. The processes and materials used to form the package structure 600e may be similar to or the same as those used to form the package structure 600d, and will not be described further herein.

[0340] FIG. 56A , FIG. 56B , FIG. 56C and FIG. 55A , FIG. 55B , FIG. 55C The difference lies in replacing the bridging structure 470' with the bridging structure 470.

[0341] FIG. 57A The diagram shows a top view of the encapsulation structure 600f according to some embodiments. FIG. 57B The display is based on some embodiments, along FIG. 57A The diagram shows a cross-sectional view of the packaging structure along line A-A'. FIG. 57C The display is based on some embodiments, along FIG. 57A The diagram shows a cross-sectional view of the packaging structure along line B-B'.

[0342] Package structure 600f is an alternative embodiment, and package structure 600f may be similar to...FIG. 55A , FIG. 55B , FIG. 55C The package structure 600d is similar to the package structure 600c, unless otherwise specified, where like reference numerals represent like elements formed using a similar process. The process and materials used to form the package structure 600f can be similar or identical to those used to form the package structure 600d, and are not described here in detail.

[0343] FIG. 57A , FIG. 57B , FIG. 57C and FIG. 55A , FIG. 55B , FIG. 55C The difference between the package structure 600f and the package structure 600e is that the bridge structure 470' is replaced with the optical fiber 370.

[0344] The package structure 100a includes the optical die 300 adjacent to the compound die 260, and the optical die 300 and the compound die 260 are bonded to the top interposer 160. The optical die 300 provides a build-in light source to improve the optical coupling efficiency. In addition, the optical die is configured to provide light to the compound die instead of from the external environment, so the alignment accuracy between the optical die and the compound die becomes easier.

[0345] The package structures 100b, 100c, 100d, 100e, 100f include the optical array 400 or 400' formed on the carrier substrate 360 to provide the light source.

[0346] The package structures 100g, 100h, 100i, 100j also include the thermoelectric cooler 450 formed on the optical die 300 to transfer the heat generated by the optical die 300 or the compound die 260 to the external environment.

[0347] The package structures 200a and 200b include the top interposer 160 having the substrate via structure 126 formed in the substrate 122. The package structures 200c, 200d, 200e, 200f are variant embodiments of the package structures 200a and 200b, and the package structures 200c, 200d, 200e, 200f include the optical array 400 or 400' formed on the carrier substrate 360 to provide the light source. The package structures 200g, 200h, 200i, 200j are variant embodiments of the package structures 200a and 200b, and the package structures 200g, 200h, 200i, 200j include the thermoelectric cooler 450 formed on the optical die 300 to transfer the heat.

[0348] The package structures 300a and 300b include optical glue 351 between the optical die 300 and the hybrid die 260, and the optical components 348 and the optical components 56. By forming the optical components 348 and 56, optical signals can be transmitted in a horizontal direction through optical coupling between adjacent optical components 348 and 56. The package structures 300c, 300d, 300e, 300f are variations of the package structures 300a and 300b, and the package structures 300c, 300d, 300e, 300f include optical arrays 400 or 400' formed on the carrier substrate 360 to provide light sources. The package structures 300g, 300h, 300i, 300j are variations of the package structures 300a and 300b, and the package structures 300g, 300h, 300i, 300j include thermoelectric coolers 450 formed on the optical die 300 to transfer heat.

[0349] The package structures 400a, 400b, 400c, 400d include bridge structures 470 or 470' on the carrier substrate 360 to transmit optical signals from the optical die 300 to the hybrid die 260. The package structures 400e, 400f, 400g, 400h are variations of the package structures 400a, 400b, 400c, 400d, and the package structures 400e, 400f, 400g, 400h include optical arrays 400 or 400' formed on the carrier substrate 360 to provide light sources, and the thermoelectric coolers 450 are formed on the optical die 300.

[0350] The package structure 500a includes a bottom interposer 880 with a memory layer 844. The package structures 500b, 500c, 500d, 500e include the optical arrays 400 or 400', the thermoelectric coolers 450, and the bridge structures 470 or 470'. The package structures 500f, 500g include the thermoelectric coolers 450 and the bridge structures 470 or 470'.

[0351] The package structure 600a includes a plurality of semiconductor dies 600 and a plurality of connection dies 366 in an alternating stack. A bottom interposer 540 is formed under the semiconductor dies 600 and the connection dies 366. The package structures 600b and 600c are variations of the package structure 600a, and the package structures 600b and 600c include the bridge structures 470 and the optical fibers 370. The package structures 600d, 600e, 600f are variations of the package structures 600a, 600b, 600c, and the package structures 600d, 600e, 600f include a bottom interposer 880 with a memory layer 844.

[0352] Embodiments of the present application provide a package structure and a method of forming the same. The package structure includes a composite die and an optical die adjacent to the composite die. The composite die includes an optical package structure (e.g., a photonic integrated circuit (PIC)) and an electronic die (e.g., an electronic integrated circuit (EIC)). The composite die and the optical die are formed on a top interposer, and the composite die and the optical die share the top interposer. Further, the optical die provides a build-in light source to improve optical coupling efficiency. In addition, the optical die is configured to provide light to the composite die instead of from an external environment, so that the alignment accuracy between the optical die and the composite die becomes easier. Light loss is reduced, and optical efficiency is greatly improved. Therefore, the performance and reliability of the package structure are further improved.

[0353] In some embodiments, a package structure is provided, including a top interposer formed above a substrate; and a first die formed above the top interposer. The first die includes an optical package structure, and the optical package structure includes a plurality of first optical components. The first die also includes an electronic die bonded to the optical package structure to form a hybrid bonding structure. The hybrid bonding structure includes a metal-to-metal bonding and a non-metal-to-non-metal bonding. The package structure includes an optical die adjacent to the first die, and the optical die and the first die share the top interposer.

[0354] In some other embodiments, the package structure described above further includes a bottom interposer formed below the top interposer; and a first semiconductor die formed adjacent to the top interposer, wherein the first semiconductor die and the top interposer are bonded to the bottom interposer.

[0355] In some other embodiments, the bottom interposer includes a plurality of dies, wherein each of the plurality of dies includes an interconnect structure.

[0356] In some other embodiments, the package structure described above further includes an optical array formed adjacent to the first die; and a carrier substrate formed on the first die, wherein the carrier substrate includes a lens.

[0357] In some other embodiments, the package structure described above further includes a cooler formed on the first die and the optical die.

[0358] In some other embodiments, the package structure described above further includes an optical glue located between the first die and the optical die.

[0359] In some other embodiments, the package structure described above further includes a bridge structure formed on the first die and the optical die, wherein the bridge structure includes a waveguide.

[0360] In some other embodiments, the package structure further includes a bottom interposer formed below the top interposer, wherein the bottom interposer includes a memory layer.

[0361] In some other embodiments, the package structure further includes a second die formed above the top interposer, wherein the second die includes: an optical package structure, wherein the optical package structure includes a plurality of second optical components; and an electronic die bonded to the optical package structure to form a hybrid bonded structure, wherein the hybrid bonded structure includes a metal-to-metal bond and a non-metal-to-non-metal bond; and a bridge structure located between the first die and the second die.

[0362] In some embodiments, a package structure is provided, including a top interposer formed above a bottom interposer; and a composite die formed on the top interposer. The composite die includes an optical package structure, and the optical package structure includes a plurality of first optical components; and an electronic die bonded to the optical package structure. The package structure also includes a laser die formed on the top interposer, and the laser die and the composite die are bonded to the top interposer through a hybrid bonded structure. The hybrid bonded structure includes a metal-to-metal bond and a non-metal-to-non-metal bond. The package structure includes a semiconductor die formed adjacent to the laser die, and the semiconductor die and the top interposer are bonded to the bottom interposer.

[0363] In some other embodiments, the package structure further includes a first carrier substrate formed on the composite die; a second carrier substrate formed on the laser die; and a third carrier substrate formed on the first carrier substrate and the second carrier substrate.

[0364] In some other embodiments, the package structure further includes an optical array formed adjacent to the composite die, wherein the optical array includes a plurality of optical components and a mirror.

[0365] In some other embodiments, the package structure further includes a cooler formed on the composite die and the laser die.

[0366] In some other embodiments, wherein the composite die includes a plurality of optical components and a mirror.

[0367] In some other embodiments, wherein the bottom interposer includes a plurality of dies, wherein each of the plurality of dies includes an interconnect structure.

[0368] In some other embodiments, wherein the bottom interposer includes a memory layer and a plurality of optical components.

[0369] In some embodiments, a method of forming a package structure is provided. The method includes bonding an electronic die to an optical package structure to form a composite die; and bonding the composite die and an optical die to a top interposer through a hybrid bonding structure, the optical die and the composite die sharing the top interposer. The method also includes bonding the top interposer to a bottom interposer.

[0370] In some other embodiments, the method further includes forming a first carrier substrate on the composite die; and forming an optical array on the first carrier substrate, the optical array including a plurality of optical components and a mirror.

[0371] In some other embodiments, the method further includes forming a bridge structure on the composite die and the optical die.

[0372] In some other embodiments, the bottom interposer includes a memory layer and a plurality of optical components.

[0373] The foregoing outlines features of many embodiments, such that those skilled in the art can better understand the aspects of the present embodiments. Those skilled in the art should appreciate that they can readily use the present embodiments as a basis for designing or modifying other processes and structures, while yet achieving the same ultimate objectives. Other embodiments can be employed without departing from the spirit and scope of the present embodiments. Accordingly, those skilled in the art will recognize that modifications and / or substitutions other than those specifically described herein can be made in the present embodiments and still be within the scope of the present embodiments.

Claims

1. A package structure, characterized by, Comprising: a top interposer formed over a substrate; a first die formed over the top interposer, wherein the first die comprises: an optical package structure, wherein the optical package structure comprises a plurality of first optical components; and an electronic die bonded to the optical package structure; and an optical die adjacent to the first die, wherein the optical die and the first die share the top interposer.

2. The package structure of claim 1, wherein, Further comprising: a bottom interposer formed under the top interposer; and a first semiconductor die formed adjacent to the top interposer, wherein the first semiconductor die and the top interposer are bonded to the bottom interposer.

3. The package structure of claim 2, wherein, The bottom interposer comprises a plurality of dies, wherein each of the plurality of dies comprises an interconnect structure.

4. The package structure of any one of claims 1 to 3, wherein, Further comprising: an optical array formed adjacent to the first die; and a carrier substrate formed on the first die, wherein the carrier substrate comprises a lens.

5. The package structure of any one of claims 1 to 3, wherein, Further comprising: a cooler formed on the first die and the optical die.

6. The package structure of any one of claims 1 to 3, wherein, Further comprising: an optical glue between the first die and the optical die.

7. The package structure of any one of claims 1 to 3, wherein, Further comprising: a bridge structure formed on the first die and the optical die, wherein the bridge structure comprises a waveguide.

8. The package structure of any one of claims 1 to 3, wherein, Further comprising: a bottom interposer formed under the top interposer, wherein the bottom interposer comprises a memory layer.

9. The package structure of any one of claims 1 to 3, wherein, Further comprising: a second die formed over the top interposer, wherein the second die comprises: an optical package structure, wherein the optical package structure comprises a plurality of second optical components; and an electronic die bonded to the optical package structure to form a hybrid bonded structure, wherein the hybrid bonded structure comprises metal-to-metal bonding and non-metal-to-non-metal bonding; and a bridge structure between the first die and the second die.

10. A package structure, characterized by, Comprising: a top interposer formed over a bottom interposer; a composite die formed on the top interposer, wherein the composite die comprises: an optical package structure, wherein the optical package structure comprises a plurality of first optical components; and an electronic die bonded to the optical package structure; a laser die formed on the top interposer, wherein the laser die and the composite die are bonded to the top interposer; and a semiconductor die formed adjacent to the laser die, wherein the semiconductor die and the top interposer are bonded to the bottom interposer.

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