Silicon liquid temporary storage device
By employing a combination of multi-layer insulation structure and heating elements in the molten silicon buffer device, the problem of temperature drop during transportation of molten silicon was solved, achieving effective temperature maintenance and improved product quality.
Patent Information
- Application Number
- CN202423151468.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-19
- Publication Date
- 2026-01-23
- Estimated Expiration
- 2034-12-19
AI Technical Summary
Existing silicon liquid buffer devices have poor heat preservation during long-distance transportation, resulting in a significant drop in silicon liquid temperature, easy solidification, low product manufacturing efficiency, and high cost.
A silicon liquid buffer device including an insulated shell is designed. The insulated shell consists of an outer shell, an inner layer, an insulation layer, and a protective layer. The inner layer is made of high-alumina castable, the insulation layer is made of silica insulating bricks, nano-insulation boards, and aluminum silicate fiber felt, and the protective layer is made of silicon carbide or silicon nitride. An embedded heating element is used for heating, and the temperature is monitored by a temperature sensor to maintain the temperature of the silicon liquid.
It effectively reduces heat loss from molten silicon, prevents molten silicon from solidifying, improves product quality and manufacturing efficiency, and reduces manufacturing costs.
Smart Images
Figure CN223822473U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to the technical field of silicon liquid smelting, particularly to a silicon liquid buffer device. BACKGROUND
[0002] The temperature of silicon liquid produced in the process of industrial silicon smelting can reach 1600-1800 DEG C. After the high-temperature silicon liquid flows out of the smelting furnace, it will be transported for a certain distance before the next process. Therefore, a silicon liquid buffer device is needed to transfer and transport the silicon liquid.
[0003] At present, the silicon liquid buffer device used is divided into an outer shell and an inner lining. The outer shell is a steel shell, and the inner lining uses refractory casting material. However, the use of cast refractory material only on the inner wall of the outer shell has relatively poor heat preservation effect. Especially during long-distance transportation, the temperature of the silicon liquid drops greatly, and a large amount of heat is lost, which easily leads to the solidification of the silicon liquid, low product manufacturing efficiency, and high manufacturing cost.
[0004] Therefore, it is necessary to provide a silicon liquid buffer device to solve the above technical problems. SUMMARY
[0005] In order to achieve the above purpose, the utility model provides a silicon liquid buffer device, which comprises a heat preservation shell body, which is internally provided with a storage cavity for storing silicon liquid, the heat preservation shell body comprises an outer shell, an inner layer and a heat preservation layer located between the outer shell and the inner layer; a heating element embedded in the heat preservation shell body and located on the inner side of the heat preservation layer for heating the silicon liquid stored in the storage cavity.
[0006] As a further improvement of the utility model, the heat preservation shell body further comprises a protective layer located on the inner side of the inner layer, the protective layer is a silicon carbide and / or silicon nitride layer, and the thickness of the protective layer is 0.2mm-1mm.
[0007] As a further improvement of the utility model, the heating element is embedded in the inner layer;
[0008] Or, the heating element is located between the inner layer and the heat preservation layer;
[0009] Or, the heating element is located between the inner layer and the protective layer.
[0010] As a further improvement of the utility model, the heat preservation shell body comprises a bottom wall, a side wall and a top wall, and the heating element is embedded in the bottom wall and the side wall.
[0011] As a further improvement of the utility model, the heating element is arranged at equal intervals along the bottom wall and the side wall.
[0012] As a further improvement of the utility model, the heating element adopts a heating rod, a heating wire or a heating plate.
[0013] As a further improvement of the utility model, the heat preservation shell further includes a liquid inlet at the top and a liquid outlet at the bottom, the liquid outlet is located at the side of the heat preservation shell away from the liquid inlet, and a sliding runner mechanism is arranged at the liquid outlet.
[0014] As a further improvement of the utility model, a buffer block is arranged at the bottom of the storage cavity and close to the side of the liquid inlet.
[0015] As a further improvement of the utility model, a slag retaining dam is further arranged at the bottom of the storage cavity and between the liquid inlet and the liquid outlet, the slag retaining dam is located at the middle position of the storage cavity, and the height of the slag retaining dam is 1 / 3-1 / 2 of the height of the storage cavity.
[0016] As a further improvement of the utility model, a temperature sensor is arranged at the middle position of the top of the storage cavity.
[0017] As a further improvement of the utility model, the inner layer is made of high-aluminum pouring material, and the thickness of the inner layer is 0.1m-0.3m.
[0018] The heat preservation layer is made of a combination of one or more of siliceous heat preservation bricks, nano heat preservation boards and aluminum silicate fiber felt, and the thickness of the heat preservation layer is 0.1m-0.5m.
[0019] The shell is made of low-alloy steel, and the thickness of the shell is 0.02m-0.05m.
[0020] As a further improvement of the utility model, the heat preservation shell is in a circular truncated cone structure or a quadrangular truncated cone structure.
[0021] The utility model has the advantages that the heat preservation shell is used for heat preservation of the silicon liquid in the storage cavity, and the heat loss of the silicon liquid in the storage cavity is reduced; the heating element is used for heating the silicon liquid, and the heat of the silicon liquid is supplemented in time, so that the solidification caused by the temperature reduction of the silicon liquid is prevented. BRIEF DESCRIPTION OF DRAWINGS
[0022] The drawings described herein are used to provide a further understanding of the utility model, and constitute a part of the utility model. The illustrative embodiments of the utility model and the description thereof are used to explain the utility model, and do not constitute an improper limitation on the utility model. In the drawings:
[0023] Fig. 1 It is a whole structure schematic view of the heat preservation device of the utility model;
[0024] Fig. 2 It is a partial structure schematic view of the shell of the utility model; DETAILED DESCRIPTION
[0025] To make the objectives, technical solutions, and advantages of this utility model clearer, the technical solutions of this utility model will be clearly and completely described below in conjunction with specific embodiments and corresponding drawings. Obviously, the described embodiments are only a part of the embodiments of this utility model, and not all of them. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this utility model.
[0026] The embodiments of this utility model are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this utility model, and should not be construed as limiting this utility model.
[0027] In the description of this utility model, it should be understood that the terms "upper", "lower", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model.
[0028] In the description of this utility model, unless otherwise specified and limited, it should be noted that the terms "installation", "connection" and "linking" should be interpreted broadly. For example, they can refer to mechanical or electrical connections, or internal connections between two components. They can be direct connections or indirect connections through an intermediate medium. Those skilled in the art can understand the specific meaning of the above terms according to the specific circumstances.
[0029] like Figs. 1-2 As shown, the silicon liquid buffer device provided by this utility model includes a heat-insulating shell 100, which has a storage cavity 200 for storing silicon liquid; and a heating element 300 embedded in the heat-insulating shell 100, which is used to heat the silicon liquid stored in the storage cavity 200.
[0030] The insulating shell 100 keeps the molten silicon in the storage cavity 200 warm, reducing heat loss. The heating element 300 heats the molten silicon, replenishing its heat promptly and preventing solidification due to temperature drop.
[0031] Specifically, the heat-insulating shell 100 is a frustum or a quadrangular frustum structure, which includes a bottom wall, a side wall and a top wall, and the bottom wall, the side wall and the top wall enclose the storage cavity 200.
[0032] The heat preservation shell 100 comprises an outer shell 101, an inner layer 102, and a heat preservation layer 103 between the outer shell 101 and the inner layer 102, which can effectively reduce the heat loss of the silicon liquid in the storage cavity 200.
[0033] In this embodiment, the outer shell 101 is made of low-alloy steel, so that the outer shell 101 has good corrosion resistance and wear resistance, and high strength, which can well protect the inner layer structure of the heat preservation shell 100. The thickness of the outer shell 101 is preferably 0.02m-0.05m.
[0034] The inner layer 102 is made of high-aluminum castable. As a refractory material, high-aluminum castable can remain stable at high temperatures. At the same time, the inner layer 102 prepared by using high-aluminum castable has good thermal conductivity, and its thermal conductivity coefficient is between 0.8-1.5W / (m·K). The heat generated by the heating element 300 can be well transmitted to the silicon liquid in the storage cavity 200 through the inner layer 102, increasing the heat conduction area between the heating element 300 and the silicon liquid, thereby improving the uniformity of the temperature of the silicon liquid in the storage cavity 200. The thickness of the inner layer 102 is preferably 0.1m-0.3m.
[0035] The heat preservation layer 103 is made of a combination of one or more of silica insulation bricks, nano insulation boards, and aluminum silicate fiber mats. The heat preservation layer 103 can effectively reduce the heat loss of the silicon liquid in the storage cavity 200, and cooperate with the heating element 300 to maintain the temperature of the silicon liquid in the storage cavity 200, preventing the silicon liquid from solidifying. The thickness of the heat preservation layer 103 is preferably 0.1m-0.5m.
[0036] Although the inner layer 102 prepared by using high-aluminum castable can withstand high temperatures, the inner layer 102 is directly in contact with the high-temperature silicon liquid, which inevitably causes ablation of the inner layer 102, thereby introducing impurities into the silicon liquid and reducing the quality of the silicon liquid.
[0037] Therefore, the heat preservation shell 100 further comprises a protective layer 104 on the inner side of the inner layer 102. The protective layer 104 is arranged on the inner wall of the inner layer 102, and the protective layer 104 is directly in contact with the silicon liquid in the storage cavity 200, thereby isolating the silicon liquid from the inner layer 102. That is, the heat preservation shell 100 has a four-layer structure, and the protective layer 104, the inner layer 102, the heat preservation layer 103, and the outer shell 101 are arranged in order from inside to outside.
[0038] The protective layer 104 is arranged on the inner side of the inner layer 102, i.e. the inner wall of the storage cavity 200 is the protective layer 104, so as to isolate the silicon liquid from the inner layer 102 and prevent the high-temperature silicon liquid from ablation of the inner layer 102 to cause impurities to enter the silicon liquid, reduce the pollution of the silicon liquid and improve the product quality of the industrial silicon.
[0039] The protective layer 104 is a silicon carbide layer and / or a silicon nitride layer. The protective layer 104 can be made of silicon carbide or silicon nitride alone or a composite coating of silicon carbide and silicon nitride. The thickness of the protective layer 104 is preferably 0.2mm-1mm.
[0040] The heat preservation shell 100 further comprises a liquid inlet 105 at the top thereof and a liquid outlet 106 at the bottom thereof. The liquid outlet 106 is arranged on the side of the heat preservation shell 100 away from the liquid inlet 105, and a sliding nozzle mechanism is arranged at the liquid outlet 106.
[0041] The high-temperature silicon liquid in the smelting furnace enters the storage cavity 200 from the liquid inlet 105, and the transfer and heat preservation of the high-temperature silicon liquid are realized through the buffer device. When it is necessary to discharge the high-temperature silicon liquid in the storage cavity 200, the liquid outlet 106 is opened through the sliding nozzle mechanism. At the same time, the sliding nozzle mechanism matched with the liquid outlet 106 can also timely discharge the silicon liquid in the storage cavity 200 in an emergency. The liquid outlet 106 is arranged on the side of the heat preservation shell 100 away from the liquid inlet 105, so as to prevent the high-temperature silicon liquid entering from the liquid inlet 105 from eroding the liquid outlet 106 and the sliding nozzle mechanism.
[0042] The storage cavity 200 is formed in the heat preservation shell 100, and the silicon liquid in the storage cavity 200 can effectively reduce heat loss and impurities under the protection of the four-layer structure of the heat preservation shell 100.
[0043] The storage cavity 200 is formed in the heat preservation shell 100, and the silicon liquid in the storage cavity 200 can effectively reduce heat loss and impurities under the protection of the four-layer structure of the heat preservation shell 100.
[0044] The storage cavity 200 also has a slag-blocking dam 202 located at the bottom between the buffer block 201 and the drain port 106. The slag-blocking dam 202 is located in the middle of the storage cavity 200 and facilitates the deposition of silicon slag in the silicon melt. The high-temperature silicon melt entering the storage cavity 200 through the inlet 105 is blocked and deposited by the slag-blocking dam 202, thereby preventing silicon slag from being discharged from the drain port 106 along with the silicon melt, thus improving the product quality of industrial silicon. Preferably, the height of the slag-blocking dam 202 is 1 / 3 to 1 / 2 of the height of the storage cavity 200.
[0045] A temperature sensor 203 is also installed inside the storage cavity 200. The temperature sensor 203 is used to detect the temperature of the molten silicon inside the storage cavity 200. When the temperature sensor 203 detects that the temperature of the molten silicon is lower than the solidification point of the molten silicon, the heating element 300 is immediately turned on to heat the molten silicon inside the storage cavity 200.
[0046] The heating element 300 is used to heat the molten silicon in the storage cavity 200 to replenish the heat in a timely manner. When the temperature sensor 203 detects a drop in the temperature of the molten silicon in the storage cavity 200, the heating element 300 is activated to heat the molten silicon and transfer the heat to the molten silicon in the storage cavity 200, thereby increasing the temperature of the molten silicon and preventing it from solidifying.
[0047] The heating element 300 is located inside the insulation layer 103. By placing the heating element 300 inside the insulation layer 103, the heat generated by the heating element 300 can be fully transferred to the molten silicon without escaping into the air, thereby improving heat utilization and effectively preventing the temperature of the molten silicon from dropping.
[0048] The heating element 300 is embedded in both the bottom and side walls of the insulation shell 100. This provides sufficient heat to the molten silicon in the storage cavity 200. Simultaneously, by transferring heat to the molten silicon in the storage cavity 200 through the heating elements 300 located at different positions, the temperature of the molten silicon in the storage cavity 200 can be maintained uniformly, preventing the molten silicon from solidifying due to excessively low local temperatures.
[0049] Preferably, the heating element 300 is arranged at equal intervals along the bottom wall and the side wall, thereby further improving the temperature uniformity of the molten silicon in the storage cavity 200 and preventing solidification caused by excessively low local temperature of the molten silicon.
[0050] In this embodiment, the temperature sensor 203 is located at the center of the top of the storage cavity 200. Since the heating element 300 is embedded in both the bottom and side walls of the insulation shell 100, and the molten silicon located at the center of the top of the storage cavity 200 is furthest from the heating element 300, the temperature of the molten silicon at this location is the lowest. By detecting the molten silicon at this location using the temperature sensor 203, it can be ensured that the molten silicon at any location in the storage cavity 200 will not solidify.
[0051] In one specific embodiment, the inner layer 102, made of high-alumina castable, has good thermal conductivity, and the heating element 300 is embedded within the inner layer 102. The heat generated by the heating element 300 is uniformly transferred to the inner layer 102, and then transferred to the molten silicon in the storage cavity 200 through the inner layer 102. The inner layer 102 increases the thermal conductivity area between the heating element 300 and the molten silicon, thereby improving the temperature uniformity of the molten silicon in the storage cavity 200.
[0052] Of course, in other embodiments, the heating element 300 may be disposed between the inner layer 102 and the insulation layer 103, or the heating element 300 may be disposed between the inner layer 102 and the protective layer 104.
[0053] The heating element 300 is a heating rod, heating wire, or heating plate. By energizing the heating element 300, it generates heat to heat the molten silicon within the storage cavity 200. Preferably, the heating element 300 is a silicon molybdenum rod heater, which has high operating temperature, rapid heating, and long lifespan. When the temperature of the molten silicon decreases, energizing the silicon molybdenum rod heater effectively heats the molten silicon, preventing solidification.
[0054] In summary, this utility model can effectively reduce the heat loss of the molten silicon in the storage cavity 200 through the heat insulation layer 103 inside the heat insulation shell 100, and together with the heating element 300, it can maintain the temperature of the molten silicon in the storage cavity 200 and prevent the molten silicon from solidifying.
[0055] It should be understood that although this specification describes embodiments, not every embodiment contains only one independent technical solution. This way of describing the specification is only for clarity. Those skilled in the art should regard the specification as a whole. The technical solutions in each embodiment can also be appropriately combined to form other embodiments that can be understood by those skilled in the art.
[0056] The detailed descriptions listed above are merely specific descriptions of feasible embodiments of the present utility model and are not intended to limit the scope of protection of the present utility model. All equivalent embodiments or modifications made without departing from the spirit of the present utility model should be included within the scope of protection of the present utility model.
Claims
1. A silicon liquid buffer device, characterized in that, include: The heat-insulating shell (100) has a storage cavity (200) for storing molten silicon. The heat-insulating shell (100) includes an outer shell (101), an inner layer (102), a heat-insulating layer (103) located between the outer shell (101) and the inner layer (102), and a protective layer (104) located inside the inner layer (102). The protective layer (104) is a silicon carbide layer and / or a silicon nitride layer. A heating element (300) is embedded in the insulation shell (100) and located inside the insulation layer (103) to heat the molten silicon stored in the storage cavity (200).
2. The silicon liquid buffer device according to claim 1, characterized in that: The thickness of the protective layer (104) is 0.2mm to 1mm.
3. The silicon liquid buffer device according to claim 2, characterized in that: The heating element (300) is embedded in the inner layer (102); Alternatively, the heating element (300) may be located between the inner layer (102) and the insulation layer (103); Alternatively, the heating element (300) may be located between the inner layer (102) and the protective layer (104).
4. The silicon liquid buffer device according to any one of claims 1 to 3, characterized in that: The heat-insulating shell (100) includes a bottom wall, a side wall and a top wall, and the heating element (300) is embedded in the bottom wall and the side wall.
5. The silicon liquid buffer device according to claim 4, characterized in that: The heating element (300) is arranged at equal intervals along the bottom wall and the side wall.
6. The silicon liquid buffer device according to claim 1, characterized in that: The heating element (300) is a heating rod, heating wire or heating plate.
7. The silicon liquid buffer device according to claim 1, characterized in that: The heat insulation shell (100) also includes a liquid inlet (105) at its top and a liquid outlet (106) at its bottom. The liquid outlet (106) is located on the side of the heat insulation shell (100) away from the liquid inlet (105), and a sliding water outlet mechanism is provided at the liquid outlet (106).
8. The silicon liquid buffer device according to claim 7, characterized in that: A buffer block (201) is provided on the bottom side of the storage cavity (200) near the liquid inlet (105).
9. The silicon liquid buffer device according to claim 7 or 8, characterized in that: The bottom of the storage cavity (200) is also provided with a slag-blocking dam (202) located between the liquid inlet (105) and the liquid outlet (106). The slag-blocking dam (202) is located in the middle of the storage cavity (200), and the height of the slag-blocking dam (202) is 1 / 3 to 1 / 2 of the height of the storage cavity (200).
10. The silicon liquid buffer device according to claim 1, characterized in that: A temperature sensor (203) is provided at the middle of the top of the storage cavity (200).
11. The silicon liquid buffer device according to claim 1, characterized in that: The inner layer (102) is made of high-alumina castable, and the thickness of the inner layer (102) is 0.1m~0.3m; The insulation layer (103) is made of one or more of the following: silica insulation bricks, nano insulation boards, and aluminum silicate fiber felt. The thickness of the insulation layer (103) is 0.1m to 0.5m. The outer shell (101) is made of low alloy steel and the thickness of the outer shell (101) is 0.02m~0.05m.
12. The silicon liquid buffer device according to claim 1, characterized in that: The thermal insulation shell (100) is a frustum structure or a quadrangular frustum structure.