Field effect transistor with better heat dissipation

By adding bosses or grooves to the exposed part of the field-effect transistor, the heat dissipation area is increased, which solves the problem of poor heat dissipation in the prior art, achieves better heat dissipation effect, and avoids high temperature damage.

CN223829823UActive Publication Date: 2026-01-23SHENZHEN YIDA MICROELECTRONICS CO LTD
View PDF 0 Cites 0 Cited by

Patent Information

Application Number
CN202520208004.2
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2025-02-10
Publication Date
2026-01-23
Estimated Expiration
2035-02-10

AI Technical Summary

Technical Problem

Existing field-effect transistors have poor heat dissipation performance and are easily damaged due to excessive temperature.

Method used

Bosses or grooves are provided on the exposed surface of the field-effect transistor to increase the heat dissipation area, and the area of ​​the exposed part is increased by external packaging structure.

Benefits of technology

This improves the heat dissipation of the MOSFET and prevents it from being damaged by high temperatures.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure CN223829823U_ABST
    Figure CN223829823U_ABST
Patent Text Reader

Abstract

The utility model provides a field effect transistor with better heat dissipation, which comprises a metal oxide semiconductor (MOS) transistor main body, the MOS transistor main body is provided with a packaging part packaged in an external packaging structure, and three pins which extend out of the bottom of the external packaging structure and can be inserted into corresponding holes on a circuit board are further packaged in the external packaging structure. The upper part of the MOS tube main body is an extending part extending above the top surface of the external packaging structure, the MOS tube main body is an exposed part exposed outside the external packaging structure between the extending part and the packaging part, and the surface of the exposed part is provided with a boss or a groove; according to the field effect transistor with better heat dissipation, the exposed area is increased, and the heat dissipation effect is better.
Need to check novelty before this filing date? Find Prior Art

Description

TECHNICAL FIELD

[0001] The utility model belongs to the field of electronic components, specifically relates to a field effect tube that is better in heat dissipation. BACKGROUND

[0002] MOS tube (field effect tube) is metal-oxide-semiconductor field effect transistor, or metal-insulator-semiconductor field effect transistor, which is separated by a thin layer of silicon dioxide, and the MOS tube has multiple functions, such as switching function and blocking function, and the use of the MOS tube brings great convenience to electronic equipment, and is often used in the fields of motor drive, power supply, battery protection and the like.

[0003] The MOS tube is a kind of semiconductor for controlling current, and is often damaged due to excessive temperature. Generally, the field effect tube is cooled through external packaging, gate, soldering pin (pin) and the like, and the area of the gate and the soldering pin exposed outside is limited, and the cooling effect is poor. Therefore, it needs to be improved. UTILITY MODEL CONTENT

[0004] Therefore, the utility model aims at providing a field effect tube that is better in heat dissipation to solve the problems in the background technology.

[0005] In order to solve the above technical problems, the utility model uses the technical scheme that:

[0006] A field effect tube that is better in heat dissipation, comprising a MOS tube body, the MOS tube body has a packaging part packaged in an external packaging structure, three pins exposed outside the bottom of the external packaging structure and insertable into corresponding holes in a circuit board are also packaged in the external packaging structure, the upper part of the MOS tube body is an extension part exposed above the top surface of the external packaging structure, the MOS tube body is a bare part exposed outside the external packaging structure between the extension part and the packaging part, and the surface of the bare part has a boss or a groove.

[0007] Further, the surface of the external packaging structure is provided with a groove at the position corresponding to the bare part, and the bare part is located in the groove.

[0008] Further, the extension part is provided with a mounting hole.

[0009] Further, the three pins are arranged side by side, and the packaging part is integrally connected with the middle pin.

[0010] Further, the middle pin and the extension part are the gate, one of the two pins on the left and right sides is the source, and the other is the drain.

[0011] Further, the bottom of the external packaging structure protrudes to form a stand on both sides of each pin.

[0012] The beneficial effects of the utility model relative to the prior art mainly reflect in: the MOS tube main body is provided with the exposed part exposed outside the external packaging structure, the exposed part surface has the boss or the groove, the area exposed outside is increased, and the heat dissipation effect is better. BRIEF DESCRIPTION OF DRAWINGS

[0013] Figure 1 It is the three-dimensional schematic view of the external packaging structure of the utility model;

[0014] Figure 2 It is the three-dimensional schematic view of the field effect tube of the utility model better heat dissipation Figure One ;

[0015] Figure 3 It is the three-dimensional schematic view of the field effect tube of the utility model better heat dissipation Figure Two ;

[0016] Figure 4 It is the three-dimensional schematic view of the field effect tube of the utility model better heat dissipation Figure Three ;

[0017] Figure 5 It is the three-dimensional schematic view of the field effect tube of the utility model better heat dissipation after removing the external packaging structure Figure One ;

[0018] Figure 6 It is the three-dimensional schematic view of the field effect tube of the utility model better heat dissipation after removing the external packaging structure Figure Two ;

[0019] Figure 7 It is Figure 4 The three-dimensional schematic view combined with the circuit board.

[0020] Explanation of the attached drawings: MOS tube main body 1, mounting hole 11, packaging part 12, extension part 13, exposed part 14, boss 141, external packaging structure 2, stand foot 21, groove 22, circuit board 3, hole 31, lead 4. DETAILED DESCRIPTION

[0021] In order to better understand the purpose, structure, features and effects of the utility model, the utility model is further explained in combination with the drawings and specific embodiments.

[0022] For example Figures 1-7The utility model discloses a field effect tube of better radiating, including MOS tube main body 1, the MOS tube main body 1 has the package department 12 of being packed in one external package structure 2, still packed in the three pins 4 of external package structure 1 bottom outside can be inserted in the hole 31 of corresponding circuit board 3 in the external package structure 2, each the pin 4 is the variable form pressure contact foot of being directly inserted in the hole 31 with the interference fixed hole 31 inner wall.

[0023] The upper portion of the MOS tube main body 1 is an extension 13 that extends above the top surface of the external package structure 2. The extension 13 is provided with a mounting hole 11. The MOS tube main body 1 has a bare portion 14 that is exposed outside the external package structure 2 between the extension 13 and the package portion 12. The surface of the bare portion 14 has a boss 141 (or a groove) arranged at intervals from the top to the bottom.

[0024] The three pins 4 are arranged side by side, and the MOS tube main body 1 is integrally connected with the middle pin 4. The middle pin 4 and the portion of the MOS tube main body 1 that extends outside the top of the external package structure 2 are the gate. One of the two pins 4 on the left and right sides is the source, and the other is the drain.

[0025] The bottom of the external package structure 2 protrudes to form a stand 21 on both sides of each pin 4. The surface of the external package structure 2 is provided with a groove 22 at the position corresponding to the bare portion 14, and the bare portion 14 is located in the groove 22.

[0026] The utility model has the beneficial effects that the MOS tube main body 1 is provided with a bare portion 14 exposed outside the external package structure 2, and the surface of the bare portion 14 has a boss 14 (or a groove), which can increase the exposed area and improve the heat dissipation effect.

[0027] The utility model has been described above in combination with the best embodiment, but the utility model is not limited to the embodiments disclosed above, and should cover various modifications, equivalent combinations according to the essence of the utility model.

Claims

1. A field-effect transistor with better heat dissipation, comprising a MOSFET body, the MOSFET body having a package portion encapsulated within an external package structure, the external package structure further encapsulating three pins extending beyond the bottom of the external package structure and insertable into corresponding holes on a circuit board, the upper part of the MOSFET body being an extension portion extending above the top surface of the external package structure, characterized in that: The MOS transistor body has an exposed portion between the protrusion and the package portion, which is outside the external package structure. The surface of the exposed portion has a boss or a groove.

2. The field-effect transistor with better heat dissipation according to claim 1, characterized in that: The surface of the external encapsulation structure has a groove at the corresponding exposed portion, and the exposed portion is located in the groove.

3. The field-effect transistor with better heat dissipation according to claim 1, characterized in that: The protruding part is provided with mounting holes.

4. The field-effect transistor with better heat dissipation according to claim 2, characterized in that: The three pins are arranged side by side, and the package is integrally connected to the middle pin.

5. The field-effect transistor with better heat dissipation according to claim 4, characterized in that: The pin and protrusion located in the middle are the gate, and one of the two pins located on the left and right sides is the source and the other is the drain.

6. The field-effect transistor with better heat dissipation according to claim 4, characterized in that: The bottom of the external package structure protrudes on both sides of each pin to form a foot.