Power device grid protection circuit and device
By using a unidirectional TVS diode module in the gate protection circuit of power devices, the problem of protection for asymmetric withstand voltage gates is solved, and bidirectional voltage protection and withstand voltage requirements are met.
Patent Information
- Application Number
- CN202520160611.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-23
- Publication Date
- 2026-01-30
- Estimated Expiration
- 2035-01-23
AI Technical Summary
Existing power device gate protection circuits cannot effectively protect gates with asymmetric withstand voltage characteristics.
By using a unidirectional TVS diode module, and by setting different forward voltage drop and reverse breakdown voltage of the unidirectional TVS diode module, the voltage transition from a high-resistivity state to a low-resistivity state is achieved, providing bidirectional voltage protection.
It achieves effective protection of the gate of asymmetric withstand voltage power devices, limits the voltage from rising further, and meets the forward and reverse withstand voltage requirements.
Smart Images
Figure CN223858830U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to electronic circuit technical field especially relates to a power device gate protection circuit and device. BACKGROUND
[0002] At present, the gate voltage resistance of third generation semiconductor SiC MOS is asymmetric voltage, that is, the positive and negative voltage resistance values are different, this asymmetric voltage resistance design helps to improve the switching speed and efficiency of the device, but at the same time, it also increases the difficulty of gate protection. The existing power device gate protection circuit cannot provide effective protection for the power device with asymmetric voltage resistance characteristics. SUMMARY
[0003] The utility model solves the technical problem to provide a kind of power device gate protection circuit and device, to provide effective protection for the power device with asymmetric voltage resistance characteristics.
[0004] To solve the above technical problems, the utility model provides a kind of power device gate protection circuit, connect with power device, and the power device gate protection circuit includes at least one unidirectional TVS tube module, the forward conduction voltage drop and reverse breakdown voltage of unidirectional TVS tube module are different;Wherein, the unidirectional TVS tube module includes at least one unidirectional TVS tube, the number, forward conduction voltage drop and reverse breakdown voltage of unidirectional TVS tube are selected based on the asymmetric gate voltage resistance demand of power device.
[0005] Further technical solutions thereof are as follows: when the power device gate protection circuit includes one unidirectional TVS tube module, the cathode of unidirectional TVS tube module is connected with the gate of power device;When the power device gate protection circuit includes multiple unidirectional TVS tube modules connected in series, the anode of previous unidirectional TVS tube module is connected with the cathode of subsequent unidirectional TVS tube module, and the cathode of unidirectional TVS tube module located in the first position is connected with the gate of power device.
[0006] Further technical solutions thereof are as follows: the power device gate protection circuit includes three unidirectional TVS tube modules connected in series, and the unidirectional TVS tube module includes one unidirectional TVS tube.
[0007] Further technical solutions thereof are as follows: the positive voltage resistance of the gate of power device is 15V, and the negative voltage resistance is 3V, the reverse breakdown voltage of unidirectional TVS tube is 5V, and the forward conduction voltage drop of unidirectional TVS tube is 1V.
[0008] Further technical solutions thereof are as follows: the unidirectional TVS tube module includes two unidirectional TVS tubes connected in parallel, the cathodes of two unidirectional TVS tubes are connected as the cathode of unidirectional TVS tube module, and the anodes of two unidirectional TVS tubes are connected as the anode of unidirectional TVS tube module.
[0009] The further technical scheme is that the power device gate protection circuit comprises two unidirectional TVS tube modules connected in series, namely a first unidirectional TVS tube module and a second unidirectional TVS tube module, and the anode of the first unidirectional TVS tube module is connected with the cathode of the second unidirectional TVS tube module.
[0010] The further technical scheme is that the forward voltage resistance of the gate of the power device is 15V and the reverse voltage resistance is 2V, the first unidirectional TVS tube module comprises two first unidirectional TVS tubes with a reverse breakdown voltage of 7V and a forward conduction voltage drop of 1V and connected in parallel with each other, the cathodes of the two first unidirectional TVS tubes are connected as the cathode of the first unidirectional TVS tube module, the anodes of the two first unidirectional TVS tubes are connected as the anode of the first unidirectional TVS tube module, the second unidirectional TVS tube module comprises two second unidirectional TVS tubes with a reverse breakdown voltage of 8V and a forward conduction voltage drop of 1V and connected in parallel with each other, the cathodes of the two second unidirectional TVS tubes are connected as the cathode of the second unidirectional TVS tube module, and the anodes of the two second unidirectional TVS tubes are connected as the anode of the second unidirectional TVS tube module.
[0011] The further technical scheme is that the forward voltage resistance of the gate of the power device is 18V and the reverse voltage resistance is 2V, the first unidirectional TVS tube module comprises two third unidirectional TVS tubes with a reverse breakdown voltage of 10V and a forward conduction voltage drop of 1V and connected in parallel with each other, the cathodes of the two third unidirectional TVS tubes are connected as the cathode of the first unidirectional TVS tube module, the anodes of the two third unidirectional TVS tubes are connected as the anode of the first unidirectional TVS tube module, the second unidirectional TVS tube module comprises a second unidirectional TVS tube with a reverse breakdown voltage of 8V and a forward conduction voltage drop of 1V, the cathode of the second unidirectional TVS tube is the cathode of the second unidirectional TVS tube module, and the anode of the second unidirectional TVS tube is the anode of the second unidirectional TVS tube module.
[0012] To solve the above technical problems, the utility model also provides a power device gate protection device, including PCB and above -mentioned power device gate protection circuit, power device gate protection circuit layout is on the PCB, every unidirectional TVS tube module of power device gate protection circuit includes at least one package, every package includes at least one unidirectional TVS tube, substrate, anode pin and cathode pin, the anode of unidirectional TVS tube is located on the upper surface of unidirectional TVS tube, the cathode of unidirectional TVS tube is located on the lower surface of unidirectional TVS tube, and the lower surface of unidirectional TVS tube is connected with the substrate, and the anode pin and the cathode pin of every package are connected with the PCB respectively.
[0013] Further technical solutions are as follows: when the package includes one unidirectional TVS tube, the anode of the unidirectional TVS tube is connected to the anode pin, and the substrate is connected to the cathode pin; when the package includes multiple unidirectional TVS tubes in series, the anode of the first unidirectional TVS tube is connected to the anode pin, the substrate connected to the previous unidirectional TVS tube is connected to the anode of the next unidirectional TVS tube, and the substrate connected to the last unidirectional TVS tube is connected to the cathode pin.
[0014] The power device gate protection circuit and device of the utility model have the beneficial effects that: the power device gate protection circuit and device of the utility model are provided with at least one unidirectional TVS tube module, and the forward conduction voltage drop and the reverse breakdown voltage of the unidirectional TVS tube module are different, so that when the voltage exceeds the breakdown voltage of the unidirectional TVS tube module, the high resistance state can be changed into a low resistance state to limit the further rise of the voltage, and under the action of the forward voltage, the unidirectional TVS tube module has the diode characteristics, so that bidirectional voltage protection is realized, and the power device gate protection circuit can provide effective protection for the power device with the asymmetric voltage resistance gate. BRIEF DESCRIPTION OF DRAWINGS
[0015] In order to more clearly illustrate the technical scheme of the utility model embodiment, the following will briefly introduce the drawings needed to be used in the embodiment description, and obviously, the drawings in the following description are some embodiments of the utility model, and for those skilled in the art, other drawings can also be obtained according to these drawings without creating labor.
[0016] Figure 1 The utility model provides the frame schematic diagram of power device gate protection circuit;
[0017] Figure 2 The utility model provides the circuit principle drawing of first embodiment of power device gate protection circuit;
[0018] Figure 3 The utility model provides the circuit principle drawing of second embodiment of power device gate protection circuit;
[0019] Figure 4 The utility model provides the circuit principle drawing of third embodiment of power device gate protection circuit;
[0020] Figure 5 The utility model provides a kind of packaging appearance schematic diagram of unidirectional TVS tube module of power device gate protection device;
[0021] Figure 6 The utility model provides the internal structure schematic diagram of a kind of packaging of unidirectional TVS tube module of power device gate protection device;
[0022] Figure 7The utility model provides a kind of power device gate protection device's structural schematic diagram. DETAILED DESCRIPTION
[0023] The technical solutions in the embodiments of the utility model will be clearly and completely described below with reference to the drawings in the embodiments of the utility model. Obviously, the described embodiments are part of the embodiments of the utility model, rather than all the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by those skilled in the art without creative labor belong to the scope of protection of the utility model.
[0024] The asymmetric voltage-withstanding characteristics of the power device refer to the difference between the forward voltage-withstanding and the reverse voltage-withstanding of the gate of the power device.
[0025] Please refer to Figure 1 , Figure 1 The utility model provides a kind of power device gate protection circuit's frame schematic diagram, power device gate protection circuit is connected with power device, and power device gate protection circuit includes at least one unidirectional TVS tube module 11, and the forward conduction voltage drop of unidirectional TVS tube module 11 and reverse breakdown voltage are different.
[0026] Among them, the unidirectional TVS tube module includes at least one unidirectional TVS tube, and the number, forward conduction voltage drop and reverse breakdown voltage of the unidirectional TVS tube are selected based on the asymmetric gate voltage-withstanding requirements of the power device. The forward conduction voltage drop of the existing unidirectional TVS tube is usually 0.7-1V.
[0027] The reverse breakdown voltage and the forward conduction voltage drop of the unidirectional TVS tube module 11 can be designed according to the forward voltage-withstanding and the reverse voltage-withstanding requirements of the gate of the power device to be protected. The power device gate protection circuit is provided with at least one unidirectional TVS tube module 11, and the forward conduction voltage drop and the reverse breakdown voltage of the unidirectional TVS tube module 11 are different. When the voltage exceeds the breakdown voltage of the unidirectional TVS tube module 11, it can change from a high resistance state to a low resistance state, limiting the further rise of the voltage. Under the action of the forward voltage, it shows the characteristics of a diode, so as to realize bidirectional voltage protection. The power device gate protection circuit can provide effective protection for the power device with asymmetric voltage-withstanding gate.
[0028] When the power device gate protection circuit includes one unidirectional TVS tube module 11, the cathode of the unidirectional TVS tube module 11 is connected to the gate of the power device.
[0029] When the power device gate protection circuit includes multiple unidirectional TVS tube modules 11 connected in series, the anode of the previous unidirectional TVS tube module 11 is connected to the cathode of the next unidirectional TVS tube module 11, and the cathode of the unidirectional TVS tube module 11 at the first position is connected to the gate of the power device.
[0030] The unidirectional series connection refers to that the anode of a former unidirectional TVS tube module 11 is connected with the cathode of a latter unidirectional TVS tube module 11 or the negative plate of the former unidirectional TVS tube module 11 is connected with the anode of the latter unidirectional TVS tube module 11.
[0031] In combination Figure 2 , Figure 2 The circuit principle diagram of the first embodiment of the power device gate protection circuit provided by the utility model, the power device gate protection circuit includes three unidirectional TVS tube modules 11 in unidirectional series connection, and the forward conduction voltage drop and the reverse breakdown voltage of the unidirectional TVS tube module 11 are different.
[0032] Of course, in other embodiments, the power device gate protection circuit includes two unidirectional TVS tube modules 11 in unidirectional series connection or four or more unidirectional TVS tube modules 11 in unidirectional series connection.
[0033] Specifically, in the first embodiment, the anode of a former unidirectional TVS tube module 11 is connected with the cathode of a latter unidirectional TVS tube module 11, and the cathode of the unidirectional TVS tube module 11 located at the first position is connected with the gate of the power device.
[0034] Specifically, in the first embodiment, the unidirectional TVS tube module 11 includes a unidirectional TVS tube. Preferably, the forward voltage resistance of the gate of the power device is 15V and the reverse voltage resistance is 3V, the reverse breakdown voltage of the unidirectional TVS tube is 5V, and the forward conduction voltage drop of the unidirectional TVS tube is 1V. As shown in Figure 2 In the first embodiment, the three unidirectional TVS tube modules 11 correspond to unidirectional TVS tubes D11, D12 and D13 respectively, and the three unidirectional TVS tube modules 11 are in unidirectional series connection, namely the corresponding unidirectional TVS tubes D11, D12 and D13 are in unidirectional series connection, the power device gate protection circuit is composed of the unidirectional series connection of D11, D12 and D13, the anode of D11 is connected with the cathode of D12, and the anode of D12 is connected with the cathode of D13. As shown in Figure 2 The forward conduction voltage drop of the power device gate protection circuit is 3V, and the reverse breakdown voltage is 15V, which meets the protection requirements that the forward voltage resistance of the gate of the power device is 15V and the reverse voltage resistance is 3V.
[0035] Of course, in other embodiments, the unidirectional TVS tube module 11 includes two or more unidirectional TVS tubes.
[0036] Specifically, in some embodiments, the unidirectional TVS tube module 11 includes two unidirectional TVS tubes in parallel connection, the cathodes of the two unidirectional TVS tubes are connected as the cathode of the unidirectional TVS tube module 11, and the anodes of the two unidirectional TVS tubes are connected as the anode of the unidirectional TVS tube module 11.
[0037] Referring to Figure 3 , Figure 3 The circuit principle diagram of the second embodiment of the power device gate protection circuit provided by the utility model, the power device gate protection circuit includes two unidirectional series unidirectional TVS tube modules, which are respectively first unidirectional TVS tube module 11a and second unidirectional TVS tube module 11b, the anode of the first unidirectional TVS tube module 11a is connected with the cathode of the second unidirectional TVS tube module 11b.
[0038] Specifically, in the second embodiment, the forward voltage resistance of the gate of the power device is 15V and the reverse voltage resistance is 2V, the first unidirectional TVS tube module 11a includes two first unidirectional TVS tubes D1 with a reverse breakdown voltage of 7V and a forward conduction voltage drop of 1V, the cathodes of the two first unidirectional TVS tubes D1 are connected as the cathode of the first unidirectional TVS tube module 11a, the anodes of the two first unidirectional TVS tubes D1 are connected as the anode of the first unidirectional TVS tube module 11a, the second unidirectional TVS tube module 11b includes two second unidirectional TVS tubes D2 with a reverse breakdown voltage of 8V and a forward conduction voltage drop of 1V, the cathodes of the two second unidirectional TVS tubes D2 are connected as the cathode of the second unidirectional TVS tube module 11b, and the anodes of the two second unidirectional TVS tubes D2 are connected as the anode of the second unidirectional TVS tube module 11b. Figure 3 As shown in the figure, the power device gate protection circuit is composed of two first unidirectional TVS tubes D1 and two second unidirectional TVS tubes D2 in parallel, and the two first unidirectional TVS tubes D1 are connected in series with the second unidirectional TVS tubes D2 in parallel. Figure 3 As shown in the figure, the forward conduction voltage drop of the power device gate protection circuit is 2V, and the reverse breakdown voltage is 15V, which meets the protection requirements of the forward voltage resistance of the gate of the power device being 15V and the reverse voltage resistance being 2V.
[0039] Referring to Figure 4 , Figure 4 The circuit principle diagram of the third embodiment of the power device gate protection circuit provided by the utility model, the power device gate protection circuit includes two unidirectional series unidirectional TVS tube modules, which are respectively first unidirectional TVS tube module 11c and second unidirectional TVS tube module 11d, the anode of the first unidirectional TVS tube module 11c is connected with the cathode of the second unidirectional TVS tube module 11d.
[0040] Specifically, in the third embodiment, the forward voltage resistance of the gate of the power device is 18V and the reverse voltage resistance is 2V, the first unidirectional TVS tube module 11c includes two third unidirectional TVS tubes D3 with a reverse breakdown voltage of 10V and a forward conduction voltage drop of 1V in parallel, the cathodes of the two third unidirectional TVS tubes D3 are connected as the cathode of the first unidirectional TVS tube module 11c, the anodes of the two third unidirectional TVS tubes D3 are connected as the anode of the first unidirectional TVS tube module 11c, the second unidirectional TVS tube module 11d includes a second unidirectional TVS tube D2 with a reverse breakdown voltage of 8V and a forward conduction voltage drop of 1V, the cathode of the second unidirectional TVS tube D2 is the cathode of the second unidirectional TVS tube module 11d, and the anode of the second unidirectional TVS tube D2 is the anode of the second unidirectional TVS tube module 11d. Figure 4 As shown in the power device gate protection circuit, the forward conduction voltage drop is 2V, the reverse breakdown voltage is 18V, and the protection requirement of the gate of the power device with a forward voltage resistance of 18V and a reverse voltage resistance of 2V is met.
[0041] In summary, the power device gate protection circuit of the utility model discloses at least two unidirectional TVS tube modules in series, and the forward conduction voltage and the reverse breakdown voltage of the unidirectional TVS tube module are different, so that when the voltage exceeds the breakdown voltage of the unidirectional TVS tube module, the high resistance state can be changed to the low resistance state, and the further rise of the voltage is limited, and under the action of the forward voltage, the diode characteristics are shown, so that the bidirectional voltage protection is realized, and the power device gate protection circuit can provide effective protection for the power device with the asymmetric voltage resistance gate.
[0042] The utility model discloses still provide a kind of power device gate protection device, power device gate protection device includes PCB (Printed Circuit Board, printed circuit board) and the power device gate protection circuit provided by above-mentioned embodiment, power device gate protection circuit is laid out on PCB;
[0043] Each unidirectional TVS tube module of the power device gate protection circuit includes at least one package, each package includes at least one unidirectional TVS tube, a substrate, an anode pin and a cathode pin, the anode of the unidirectional TVS tube is located on the upper surface of the unidirectional TVS tube, the cathode of the unidirectional TVS tube is located on the lower surface of the unidirectional TVS tube, the lower surface of the unidirectional TVS tube is connected with the substrate, then the cathode of the unidirectional TVS tube is connected with the substrate, and the unidirectional TVS tube can be a chip structure.
[0044] The anode pin and the cathode pin of each package are respectively connected with the PCB.
[0045] Among them, the type of package can be SMA, SMB, SMC, TO-252, TO-263 or TO-220, etc.
[0046] In some embodiments, when the package includes one unidirectional TVS tube, the anode of the unidirectional TVS tube is connected to the anode pin, and the substrate is connected to the cathode pin.
[0047] In some embodiments, when the package includes a plurality of unidirectional TVS tubes connected in series, the anode of the first unidirectional TVS tube is connected to the anode pin, the substrate connected to the first unidirectional TVS tube is connected to the anode of the second unidirectional TVS tube, and the substrate connected to the last unidirectional TVS tube is connected to the cathode pin.
[0048] Referring to the package appearance shown in Figure 5 The package 111 includes an anode pin 101 and a cathode pin 102, which are respectively located at two ends of the package 111. Referring to Figure 6 , the package 111 includes two unidirectional TVS tubes, which are chip structures and can be respectively denoted as a 121st unidirectional TVS tube 121 and a 122nd unidirectional TVS tube 122. The anode of the 121st unidirectional TVS tube 121 is located on the upper surface of the 121st unidirectional TVS tube 121, the cathode of the 121st unidirectional TVS tube 121 is located on the lower surface of the 121st unidirectional TVS tube 121, the anode of the 122nd unidirectional TVS tube 122 is located on the upper surface of the 122nd unidirectional TVS tube 122, and the cathode of the 122nd unidirectional TVS tube 122 is located on the lower surface of the 122nd unidirectional TVS tube 122. The package 111 also includes substrates, which can be copper substrates, and the number of the substrates can correspond to the number of the unidirectional TVS tubes. The substrates can be respectively denoted as a first substrate 131 and a second substrate 132. The upper surface of the 121st unidirectional TVS tube 121 is connected to the anode pin 101 through a binding wire, the lower surface of the 121st unidirectional TVS tube 121 is connected to the first substrate 131, the upper surface of the 122nd unidirectional TVS tube 122 is connected to the first substrate 131 connected to the 121st unidirectional TVS tube 121 through a binding wire, the lower surface of the 122nd unidirectional TVS tube 122 is connected to the second substrate 132, and the substrate connected to the 122nd unidirectional TVS tube 122 is connected to the cathode pin 102 through a binding wire.
[0049] Referring to the package appearance shown in Figure 7 , Figure 7A schematic diagram of a power device gate protection device is shown, the forward voltage resistance of the gate of the power device is 18V and the reverse voltage resistance is 2V, the power device gate protection device comprises a PCB 21, a first unidirectional TVS tube module 11c and a second unidirectional TVS tube module 11d, the first unidirectional TVS tube module 11c comprises two first packages 111a in parallel, and the second unidirectional TVS tube module 11d comprises a second package 111b. Each first package 111a comprises a first unidirectional TVS tube with a reverse breakdown voltage of 10V and a forward conduction voltage drop of 1V, the anode of the first unidirectional TVS tube is connected to the anode pin, the cathode of the first unidirectional TVS tube is connected to the substrate, and the substrate is connected to the cathode pin. The second package 111b comprises a second unidirectional TVS tube with a reverse breakdown voltage of 8V and a forward conduction voltage drop of 1V, the anode of the second unidirectional TVS tube is connected to the anode pin, the cathode of the second unidirectional TVS tube is connected to the substrate, and the substrate is connected to the cathode pin.
[0050] The cathode pins of the two first packages 111a are connected as the cathode of the first unidirectional TVS tube module 11c, the anode pins of the two first packages 111a are connected as the anode of the first unidirectional TVS tube module 11c, the cathode pin of the second package 111b is connected as the cathode of the second unidirectional TVS tube module 11d, and the anode pin of the second package 111b is connected as the anode of the second unidirectional TVS tube module 11d. As shown in the power device gate protection device, the forward conduction voltage drop is 2V, the reverse breakdown voltage is 18V, and the protection requirement of the gate of the power device with a forward voltage resistance of 18V and a reverse voltage resistance of 2V is met. Figure 7
[0051] The power device gate protection device of the utility model comprises a PCB and a power device gate protection circuit, at least one unidirectional TVS tube module is arranged, the forward conduction voltage drop and the reverse breakdown voltage of the unidirectional TVS tube module are different, when the voltage exceeds the breakdown voltage of the unidirectional TVS tube module, the high resistance state can be changed into the low resistance state, the voltage is limited to further rise, under the action of the forward voltage, the diode characteristic is shown, two-way voltage protection is realized, and the power device gate protection circuit can provide effective protection for the power device with the asymmetric voltage resistance gate.
[0052] The above is only a specific embodiment of the utility model, but the protection scope of the utility model is not limited to this, any skilled person in the art can easily think of various equivalent modifications or replacements within the technical range disclosed by the utility model, and these modifications or replacements should be covered in the protection scope of the utility model. Therefore, the protection scope of the utility model should be subject to the protection scope of the claims.
Claims
1. A power device gate protection circuit, characterized by, The gate protection circuit of the power device is connected with a power device, and comprises at least one unidirectional TVS tube module, the forward conduction voltage drop and the reverse breakdown voltage of the unidirectional TVS tube module are different. The unidirectional TVS tube module comprises at least one unidirectional TVS tube, and the number, forward conduction voltage drop and reverse breakdown voltage of the unidirectional TVS tube are selected based on the asymmetric gate voltage resistance requirement of the power device.
2. The power device gate protection circuit of claim 1, wherein, When the gate protection circuit of the power device comprises one unidirectional TVS tube module, the cathode of the unidirectional TVS tube module is connected with the gate of the power device. When the gate protection circuit of the power device comprises a plurality of unidirectional TVS tube modules connected in series, the anode of a previous unidirectional TVS tube module is connected with the cathode of a subsequent unidirectional TVS tube module, and the cathode of the first unidirectional TVS tube module is connected with the gate of the power device.
3. The power device gate protection circuit of claim 1, wherein, The gate protection circuit of the power device comprises three unidirectional TVS tube modules connected in series, and each unidirectional TVS tube module comprises one unidirectional TVS tube.
4. The power device gate protection circuit of claim 3, wherein, The forward voltage resistance of the gate of the power device is 15V, the reverse voltage resistance is 3V, the reverse breakdown voltage of the unidirectional TVS tube is 5V, and the forward conduction voltage drop of the unidirectional TVS tube is 1V.
5. The power device gate protection circuit of claim 1, wherein, The unidirectional TVS tube module comprises two unidirectional TVS tubes connected in parallel, the cathodes of the two unidirectional TVS tubes are connected as the cathode of the unidirectional TVS tube module, and the anodes of the two unidirectional TVS tubes are connected as the anode of the unidirectional TVS tube module.
6. The power device gate protection circuit of claim 1 or 5, wherein, The gate protection circuit of the power device comprises two unidirectional TVS tube modules connected in series, which are a first unidirectional TVS tube module and a second unidirectional TVS tube module, and the anode of the first unidirectional TVS tube module is connected with the cathode of the second unidirectional TVS tube module.
7. The power device gate protection circuit of claim 6, wherein, The forward voltage resistance of the gate of the power device is 15V, the reverse voltage resistance is 2V, the first unidirectional TVS tube module comprises two first unidirectional TVS tubes connected in parallel, the reverse breakdown voltage of the first unidirectional TVS tube is 7V, the forward conduction voltage drop of the first unidirectional TVS tube is 1V, the cathodes of the two first unidirectional TVS tubes are connected as the cathode of the first unidirectional TVS tube module, the anodes of the two first unidirectional TVS tubes are connected as the anode of the first unidirectional TVS tube module, the second unidirectional TVS tube module comprises two second unidirectional TVS tubes connected in parallel, the reverse breakdown voltage of the second unidirectional TVS tube is 8V, the forward conduction voltage drop of the second unidirectional TVS tube is 1V, the cathodes of the two second unidirectional TVS tubes are connected as the cathode of the second unidirectional TVS tube module, and the anodes of the two second unidirectional TVS tubes are connected as the anode of the second unidirectional TVS tube module.
8. The power device gate protection circuit of claim 6, wherein, The forward voltage of the gate of the power device is 18V and the reverse voltage is 2V, the first unidirectional TVS tube module comprises two third unidirectional TVS tubes in parallel, each of which has a reverse breakdown voltage of 10V and a forward conduction voltage drop of 1V, the cathodes of the two third unidirectional TVS tubes are connected as the cathode of the first unidirectional TVS tube module, the anodes of the two third unidirectional TVS tubes are connected as the anode of the first unidirectional TVS tube module, the second unidirectional TVS tube module comprises a second unidirectional TVS tube having a reverse breakdown voltage of 8V and a forward conduction voltage drop of 1V, the cathode of the second unidirectional TVS tube is the cathode of the second unidirectional TVS tube module, and the anode of the second unidirectional TVS tube is the anode of the second unidirectional TVS tube module.
9. A power device gate protection apparatus, characterized by, The power device gate protection circuit according to any one of claims 1-8 is arranged on the PCB. Each unidirectional TVS tube module of the power device gate protection circuit comprises at least one package, each package comprising at least one unidirectional TVS tube, a substrate, an anode pin and a cathode pin, the anode of the unidirectional TVS tube being on the upper surface of the unidirectional TVS tube, the cathode of the unidirectional TVS tube being the lower surface of the unidirectional TVS tube, and the lower surface of the unidirectional TVS tube being connected to the substrate. The anode pin and the cathode pin of each package are respectively connected to the PCB.
10. The power device gate protection apparatus of claim 9, wherein, When the package comprises one unidirectional TVS tube, the anode of the unidirectional TVS tube is connected to the anode pin, and the substrate is connected to the cathode pin. When the package comprises a plurality of unidirectional TVS tubes connected in series, the anode of the first unidirectional TVS tube is connected to the anode pin, the substrate connected to the first unidirectional TVS tube is connected to the anode of the second unidirectional TVS tube, and the substrate connected to the last unidirectional TVS tube is connected to the cathode pin.