FET (Field Effect Transistor) for improving maximum radio frequency input power and amplifier structure
By connecting a diode between the gate and source of the FET transistor inside the amplifier, the shortcomings of existing amplifiers in terms of maximum RF input power are solved, the performance of the amplifier itself is improved, breakdown damage caused by excessive voltage is avoided, and the structure remains compact and low-loss.
Patent Information
- Application Number
- CN202423299727.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-31
- Publication Date
- 2026-01-30
- Estimated Expiration
- 2034-12-31
AI Technical Summary
The performance improvement of existing amplifiers in terms of maximum RF input power mainly relies on limiters and attenuators, which makes the amplifiers easy to be damaged or burned out, and lacks the ability to improve the amplifiers themselves.
A diode is connected between the gate and source of the FET transistor inside the amplifier. The diode conducts when the RF signal increases, preventing the FET transistor from breaking down due to excessive voltage between the gate and drain. The maximum RF input power is increased by improving the internal structure of the amplifier.
It significantly improves the maximum RF input power performance of the amplifier, avoids breakdown damage caused by excessive voltage, and has a compact structure and low loss.
Smart Images
Figure CN223859121U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model belongs to amplifier structure field, concretely relates to a kind of FET transistor and amplifier structure for improving maximum radio frequency input power. BACKGROUND
[0002] Amplifier is the most common electronic device, applied in various electronic systems. The role of amplifier is to amplify the input signal, so as to drive other devices or for long distance transmission. Amplifier has an important index, that is, "maximum radio frequency input power". When using amplifier, when the input signal power exceeds the index, the amplifier will be damaged or burned, resulting in the failure of the entire electronic system. Therefore, the index of maximum radio frequency input power is very important.
[0003] Usually, the power input of amplifier is strictly calculated to ensure that the amplifier is not burned. It is of great significance to develop the maximum radio frequency input power of amplifier to improve the reliability of the entire electronic system.
[0004] In the prior art, the input power is limited by limiter and attenuator, and the maximum radio frequency input power performance of the amplifier itself is not improved. SUMMARY
[0005] The utility model aims at a kind of FET transistor for improving maximum radio frequency input power, and the utility model further provides an amplifier structure comprising the FET transistor for improving maximum radio frequency input power.
[0006] Technical scheme: the FET transistor for improving maximum radio frequency input power, diode is connected to the source and gate of FET transistor, the negative electrode of diode is connected to the gate of FET transistor, and the positive electrode of diode is connected to the source or equivalent source of FET transistor.
[0007] Further, the diode is a single-stage diode or a multi-stage diode, which reduces the actual working voltage between the gate and the drain of the FET transistor inside the amplifier, enhances the maximum radio frequency input power of the amplifier, and has the characteristics of small size and low loss.
[0008] Further, the multi-stage diode is connected in the same direction.
[0009] Further, the direction of the diode and the equivalent diode between the internal gate and the source of the FET transistor is opposite.
[0010] Further, the size of the diode is adjusted according to the working frequency and input power of the amplifier
[0011] In the utility model, the direction of the newly added reverse diode is opposite to the diode direction between the gate and the source in the FET transistor large signal model, the large signal is clipped, the FET transistor inside the amplifier is prevented from being burned out due to the reverse breakdown caused by the voltage between the gate and the drain being too high, and therefore the maximum radio frequency input power of the amplifier itself is improved.
[0012] Invention principle: in the utility model, a single-stage or multi-stage diode is connected between the gate and the source of the FET transistor inside the amplifier, the diode is turned on when the radio frequency signal increases, and the FET transistor is prevented from being burned out due to the reverse breakdown caused by the reverse voltage between the gate and the drain being too high;The positive pole of the diode can also be connected with the equivalent source, which is equivalent to being added to the amplifier input matching circuit, almost without increasing the circuit size, and the loss is smaller than the previous amplitude limiter and attenuator input signal power limiting scheme.
[0013] In conclusion, the utility model greatly improves the maximum radio frequency input power that the amplifier can withstand.Compared with the previous stage amplitude limiter and attenuator, the utility model improves the power handling capability of the amplifier itself rather than the power handling capability of the previous stage components, which is fundamentally different.
[0014] Advantages: compared with the prior art, the utility model has the following advantages: the utility model improves the maximum radio frequency input power performance of the amplifier circuit itself by improving the FET transistor inside the amplifier, compared with the prior art, which limits the input power by using an amplitude limiter and an attenuator to prevent the amplifier from being damaged or burned out, the utility model can improve the maximum radio frequency input power performance of the amplifier itself, and has compact structure, small size and low loss. BRIEF DESCRIPTION OF DRAWINGS
[0015] Figure 1 It is the existing amplifier topology structure diagram in comparative example 1;
[0016] Figure 2 It is the topology structure diagram of example 1, and the box is the topology of the utility model, which is added between the gate and the source of the FET transistor;
[0017] Figure 3 It is the topology structure diagram of example 2, and the box is the topology of the utility model, which is added to the input matching circuit;
[0018] Figure 4 It is the chip original layout of example 3;
[0019] Figure 5 It is the improved layout of example 3, and the box is the improved structure added. DETAILED DESCRIPTION
[0020] The present invention will now be further described in conjunction with specific embodiments and accompanying drawings.
[0021] Comparative Example 1: The topology diagram of an existing amplifier is shown below. Figure 1 As shown, the maximum RF input power depends on the semiconductor process's ability to withstand the maximum drain-gate voltage breakdown, which is typically 15dBm-18dBm.
[0022] Example 1: This example improves upon existing amplifiers, such as... Figure 2 As shown, two non-inverting series diodes are used, connected in... Figure 1 Between the source and gate of the FET transistor in the amplifier. Note the diode orientation: the negative terminal is connected to the gate of the FET transistor, and the positive terminal is connected to the source of the FET transistor.
[0023] Example 2: This example improves upon existing amplifiers, such as... Figure 3 As shown, the box indicates the added topology. The added topology is not directly connected. Figure 1 Instead of placing the source and gate of the FET transistors in the amplifier, they are placed in the input matching circuit to participate in the optimization of other electrical performance without affecting the improvement of the maximum RF input power.
[0024] Example 3: This example improves upon existing amplifiers, such as... Figure 4 This is the original layout of an amplifier chip. Figure 5 This is an improved layout; the boxes contain the added and improved structures. Figure 5 In diagram D1 and D2, two diodes are connected in series, with their cathodes connected to capacitor C1, providing DC conductivity to the gate of FET1. The anodes of these two diodes are connected to ground, effectively acting as the source of FET1. The equivalent circuit of D1 and D2 is a very small capacitor, serving the same circuit matching function as capacitor C2. (Original diagram) Figure 4 No Figure 5 The structure in the box operates at a frequency of 4GHz-6GHz and has a maximum RF input power of 17dBm. Figure 5 Adding two diodes to an unused space on the layout did not affect the layout size, but significantly increased the maximum RF input power to 30dBm. Since the added structure participates in chip matching, it has almost no impact on other chip performance. If a traditional solution with a pre-amplifier were used to achieve the same 30dBm maximum RF input power, the chip size would definitely increase, and the chip's noise performance would deteriorate to some extent.
[0025] Therefore, by combining Embodiments 1-3 and Comparative Example 1, this invention significantly improves the maximum RF input power performance of the amplifier circuit itself through improvements to the amplifier.
Claims
1. An FET transistor for increased maximum radio frequency input power, characterized by, The source and gate of the FET transistor are connected by a diode, the cathode of the diode is connected to the gate of the FET transistor, and the anode of the diode is connected to the source or equivalent source of the FET transistor.
2. The FET transistor for increased maximum radio frequency input power of claim 1, wherein, The diode is a single-stage diode.
3. The FET transistor for increased maximum radio frequency input power of claim 1, wherein, The diode is a multi-stage diode.
4. The FET transistor for increased maximum radio frequency input power of claim 3, wherein, The multi-stage diode is in series in the same direction.
5. The FET transistor for increased maximum radio frequency input power of claim 1, wherein, The diode is opposite in direction to the equivalent diode between the internal gate and source of the FET transistor.
6. The FET transistor for increased maximum radio frequency input power of claim 1, wherein, The size of the diode is adjusted according to the operating frequency and input power of the amplifier.
7. An amplifier structure, characterized by An FET transistor for increased maximum radio frequency input power as claimed in any one of claims 1 to 6.