Gas spraying device for semiconductor manufacturing process

Abstract

A gas spraying device for a semiconductor manufacturing process comprises a gas input pipeline communicated with a gas source; the first gas cavity is communicated with one side, far away from the gas source, of the gas input pipeline; the first pore plate is arranged on one side, far away from the gas input pipeline, of the first gas cavity, and a plurality of first gas holes are formed in the first pore plate; the second gas cavity is formed in the side, away from the first gas cavity, of the first pore plate, blades are arranged in the second gas cavity, and the blades are hung on the side, away from the first gas cavity, of the first pore plate; the second pore plate is communicated with the side, close to the blades, of the second gas cavity, a plurality of second gas holes are formed in the second pore plate, and the distribution density of the first gas holes in the first pore plate is smaller than that of the second gas holes in the second pore plate. Through the gas spraying device, the gas can be uniformly sprayed on the surface of the wafer, so that the film deposited on the surface of the wafer is uniformly distributed or uniformly etched.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor technology, specifically to a gas spraying device for semiconductor manufacturing processes. Background Technology

[0002] In semiconductor manufacturing, deposition and etching are crucial processes that significantly impact semiconductor quality. During thin film deposition or etching, the uniformity of gas distribution on the wafer severely affects the thickness, composition, and other properties of the deposited film, as well as the uniformity of etching, ultimately determining the yield of semiconductor production. Existing gas spraying devices often result in different gas flow rates and velocities between the center and edge regions of the wafer, leading to uneven film deposition or etching on the wafer surface, severely affecting wafer quality. Utility Model Content

[0003] The purpose of this invention is to provide a gas spraying device that improves the distribution of gas in the central and edge regions of a wafer, thereby improving the quality of the wafer.

[0004] To achieve the above-mentioned and other related objectives, this utility model is implemented through the following technical solution.

[0005] This utility model provides a gas spraying device for semiconductor manufacturing processes, comprising:

[0006] The gas input pipeline is connected to the gas source.

[0007] The first gas chamber is connected to the side of the gas input pipe away from the gas source;

[0008] The first orifice plate is connected to the side of the first gas chamber away from the gas input pipe, and the first orifice plate includes a plurality of first gas holes;

[0009] The second gas chamber is disposed on the side of the first orifice plate away from the first gas chamber, and blades are disposed in the second gas chamber, the blades being suspended on the side of the first orifice plate away from the first gas chamber;

[0010] The second orifice plate is connected to the side of the second gas chamber near the blade, and the second orifice plate includes a plurality of second air holes, wherein the distribution density of the first air holes on the first orifice plate is less than the distribution density of the second air holes on the second orifice plate.

[0011] In this process, the gas from the second gas chamber, which is uniformly distributed laterally, passes through the second gas holes with a higher distribution density and is evenly sprayed onto the wafer surface.

[0012] In one embodiment of this utility model, the connection between the gas input pipe and the first gas chamber is located at the center of the outer surface of the first gas chamber.

[0013] In one embodiment of this utility model, the distance from the outlet end of the gas input pipe to the first orifice plate is less than the distance from the first orifice plate to the second orifice plate.

[0014] In one embodiment of this utility model, the diameter of the first air hole is larger than the diameter of the second air hole.

[0015] In one embodiment of the present invention, the distribution density of the first pores on the first perforated plate is less than the distribution density of the second pores on the second perforated plate.

[0016] In one embodiment of this utility model, there are at least two sets of blades, and the two sets of blades are evenly distributed in the second gas chamber on both sides of the center of the first perforated plate.

[0017] In one embodiment of this utility model, the blade is arranged parallel to the first perforated plate.

[0018] In one embodiment of this utility model, the blades are in the form of two blades, three blades, or four blades.

[0019] In one embodiment of this utility model, a plurality of the first air holes are arranged in a ring array or a rectangular array around the center of the first perforated plate.

[0020] In one embodiment of this utility model, a plurality of the second air holes are arranged in a ring array or a rectangular array around the center of the second perforated plate.

[0021] In summary, this invention proposes a gas spraying device for semiconductor manufacturing. By utilizing the pressure difference between the central and edge regions of the first perforated plate, the rotation of the blades enhances the lateral flow of the gas in the second gas chamber, thereby ensuring that the gas output from the gas spraying device is evenly distributed in the central and edge regions of the wafer, thus promoting uniform deposition of thin films on the wafer surface or uniform etching. Attached Figure Description

[0022] To more clearly illustrate the technical solutions of the embodiments of this utility model, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0023] Figure 1 This is a schematic diagram of the structure of a gas spraying device in one embodiment of the present invention;

[0024] Figure 2 This is a schematic diagram of the structure of the first orifice plate in a gas spraying device according to an embodiment of the present invention;

[0025] Figure 3 This is a schematic diagram of the structure of the first orifice plate in the gas spraying device in another embodiment of the present invention;

[0026] Figure 4 This is a schematic diagram of the structure of the second orifice plate in a gas spraying device according to one embodiment of the present invention;

[0027] Figure 5 This is a schematic diagram of the structure of the second orifice plate in the gas spraying device in another embodiment of the present invention.

[0028] Marker explanation:

[0029] 10. Gas input pipe; 11. First gas chamber; 12. First orifice plate; 13. Second gas chamber; 14. Second orifice plate; 121. First vent; 131. Blade; 141. Second vent. Detailed Implementation

[0030] The following specific examples illustrate the implementation of this utility model. Those skilled in the art can easily understand other advantages and effects of this utility model from the content disclosed in this specification. This utility model can also be implemented or applied through other different specific embodiments, and various details in this utility model can be modified or changed based on different viewpoints and applications without departing from the spirit of this utility model. It should be noted that, unless otherwise specified, the following embodiments and features described therein can be combined with each other.

[0031] It should be noted that the illustrations provided in the following embodiments are only schematic representations of the basic concept of the present invention. Therefore, the drawings only show the components related to the present invention and are not drawn according to the number, shape and size of the components in actual implementation. In actual implementation, the form, quantity and proportion of each component can be arbitrarily changed, and the layout of the components may also be more complex.

[0032] In this utility model, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this application. Furthermore, the terms "first" and "second" are used only for descriptive and distinguishing purposes and should not be construed as indicating or implying relative importance.

[0033] This invention provides a gas spraying device that accelerates the lateral flow of gas and balances the flow rate and velocity of gas in the center and edge regions of the perforated plate, enabling the gas to be sprayed evenly on the wafer surface, thereby improving the deposition or etching quality and increasing the yield of semiconductor production.

[0034] Please see Figure 1 As shown, this utility model provides a gas spraying device, including, for example, a gas input pipe 10, a first gas chamber 11, a first orifice plate 12, a second gas chamber 13, and a second orifice plate 14. A blade 131 is disposed within the second gas chamber 13 and suspended on the side of the first orifice plate 12 away from the first gas chamber 11. Utilizing the difference in flow rate and velocity of the gas between the central and edge regions of the first orifice plate 12, the blade 131 is driven to rotate, accelerating the lateral flow of the gas and improving its lateral distribution.

[0035] Please see Figure 1 As shown, in one embodiment of this invention, the gas input pipe 10 is connected to a gas source to transport gas. The gas enters the gas spraying device through the gas input pipe 10 and is evenly sprayed onto the wafer surface. The gas diffuses and is adsorbed on the wafer surface, where a chemical reaction occurs to form a solid deposit. The gaseous byproducts produced by the reaction detach from the wafer surface. In this embodiment, the gas source is, for example, one or more of the deposition sources such as silane, chlorosilane, dichlorosilane, disilane, or tungsten hexafluoride. The gas source can also be, for example, one or more of the etching gases such as trifluoromethane, difluoromethane, nitrogen trifluoride, sulfur hexafluoride, nitrogen, or oxygen. The gas input pipe 10 is, for example, a seamless EP-grade double-layer stainless steel pipe of 316 or 316L to prevent gas leakage and ensure gas purity.

[0036] Please see Figure 1 As shown, in one embodiment of this invention, the first gas chamber 11 is connected to the side of the gas input pipe 10 away from the gas source, and the connection point between the gas input pipe 10 and the first gas chamber 11 is located at the center of the outer surface of the first gas chamber 11. Gas transmitted from the gas input pipe 10 enters the first gas chamber 11, flows laterally within the first gas chamber 11, and diffuses to fill the entire first gas chamber 11. In this embodiment, the cross-sectional shape of the first gas chamber 11 is, for example, rectangular or circular, and the material of the first gas chamber 11 is, for example, 316 or 316L seamless stainless steel. The inner surface of the first gas chamber 11 is, for example, wear-resistant and smooth, to ensure the safety of the delivery process and the purity of the gas.

[0037] Please see Figure 1 , Figure 2 and Figure 3As shown, in one embodiment of this utility model, the first orifice plate 12 is connected to the side of the first gas chamber 11 away from the gas input pipe 10. The shape of the first orifice plate 12 matches the cross-sectional shape of the first gas chamber 11, and the first orifice plate 12 includes a plurality of first air holes 121, which are arranged in a ring array or a rectangular array around the center of the first orifice plate 12. Please refer to [link / reference]. Figure 2 As shown, in one embodiment of this utility model, the shape of the first perforated plate 12 is, for example, circular, and the first air holes 121 are distributed in a ring array around the center of the first perforated plate 12, for example. Please refer to... Figure 3 As shown, in another embodiment of this utility model, the shape of the first orifice plate 12 is, for example, rectangular, and the first air holes 121 are distributed in a rectangular array around the center of the first orifice plate 12. The gas in the first gas chamber 11 enters the second gas chamber 13 through the multiple first air holes 121 on the first orifice plate 12. However, since the central region of the first orifice plate 12 is close to the gas input pipe 10, the flow rate and velocity of the gas in the central region and the edge region of the first orifice plate 12 are different. Therefore, the lateral distribution of the gas on the first orifice plate 12 is uneven.

[0038] Please see Figure 1As shown, in one embodiment of this utility model, the second gas chamber 13 is disposed on the side of the first orifice plate 12 away from the first gas chamber 11. The cross-sectional shape of the second gas chamber 13 matches that of the first gas chamber 11. At least two sets of blades 131 are disposed in the second gas chamber 13. The blades 131 are arranged parallel to the first orifice plate 12 and are suspended on the side of the first orifice plate 12 away from the first gas chamber 11, and are evenly distributed in the second gas chambers 13 on both sides of the gas input pipe 10. In this embodiment, for example, two sets of blades 131 are disposed in the second gas chamber 13. The two sets of blades 131 are respectively located in the second gas chambers 13 on both sides of the center of the first orifice plate 12, and the two ends of the same set of blades 131 are close to the central region and the edge region of the first orifice plate 12, respectively. Gas enters the second gas chamber 13 through the first vent 121, where it flows laterally and diffuses to fill the entire chamber. Simultaneously, due to the different flow rates and velocities at the center and edge of the first orifice plate 12, the gas pressure differs at both ends of the same set of blades 131, driving the blades 131 to rotate. This accelerates the lateral flow of gas in the second gas chamber 13, improving its lateral distribution. Furthermore, in this embodiment, the distance from the outlet of the gas input pipe 10 to the first orifice plate 12 is less than the distance from the first orifice plate 12 to the second orifice plate 14. The residence time of the gas in the second gas chamber 13 is longer than in the first gas chamber 11, allowing the lateral flow of gas in the second gas chamber 13 to be sufficiently accelerated by the blades 131. Therefore, the lateral distribution of gas on the side of the second orifice plate 14 near the blades 131 is uniform. In this embodiment, the blades 131 can be, for example, two, three, or four blades. Due to the different gas pressures at both ends of the blades 131, the blades 131 do not require external force to rotate, thus accelerating the lateral flow of gas.

[0039] Please see Figures 1 to 5 As shown, in one embodiment of this utility model, the second perforated plate 14 is disposed on the side of the second gas chamber 13 away from the blade 131, and the shape of the second perforated plate 14 matches the cross-sectional shape of the second gas chamber 13. The second perforated plate 14 includes a plurality of second air holes 141. The diameter of the first air hole 121 is larger than the diameter of the second air hole 141, and the distribution density of the first air hole 121 on the first perforated plate 12 is less than the distribution density of the second air hole 141 on the second perforated plate 14. The plurality of second air holes 141 are arranged in a ring array or a rectangular array around the center of the second perforated plate 14, etc. Please refer to [link / reference]. Figure 4 As shown, in one embodiment of this utility model, the shape of the second perforated plate 14 is, for example, circular, and the second air holes 141 are distributed in a ring array around the center of the second perforated plate 14, for example. Please refer to... Figure 5As shown, in another embodiment of this invention, the shape of the second perforated plate 14 is, for example, rectangular, and the second vents 141 are distributed in a rectangular array around the center of the second perforated plate 14. Gas in the second gas chamber 13 passes through multiple second vents 141 with a higher distribution density and smaller aperture, allowing the gas from the second gas chamber 13 to be sprayed more evenly onto the wafer surface, thus improving the uniformity of the thin film or etching uniformity on the wafer surface during the deposition process.

[0040] To further illustrate the gas spraying device provided by this utility model, the movement process of the gas in the gas spraying device is described in detail below.

[0041] Please see Figures 1 to 5 As shown, gas enters the first gas chamber 11 through the gas input pipe 10, diffuses within the first gas chamber 11, and fills the entire chamber. Gas from the first gas chamber 11 enters the second gas chamber 13 through the first vent 121 on the first orifice plate 12. Because the central region of the first orifice plate 12 is close to the gas input pipe 10, the flow rate and velocity of the gas differ between the central and edge regions of the first orifice plate 12, resulting in an uneven lateral distribution of the gas entering the second gas chamber 13 on the first orifice plate 12. After this unevenly distributed gas from the first orifice plate 12 enters the second gas chamber 13, it diffuses and fills the entire chamber. Simultaneously, due to the difference in flow rate and velocity between the center and edge of the first orifice plate 12, the gas pressure at both ends of the same set of blades 131 differs, driving the blades 131 to rotate. This accelerates the lateral flow of gas in the second gas chamber 13, thus achieving a uniform lateral distribution of gas on the side of the second orifice plate 14 near the blades 131. Gas from the second gas chamber 13, which is laterally distributed evenly, passes through the second gas hole 141, which has a higher distribution density and smaller pore size, and is evenly sprayed onto the wafer surface, thereby improving the uniformity of etching or the uniformity of the wafer surface film during deposition.

[0042] In summary, this invention proposes a gas spraying device that utilizes the pressure difference between the central and edge regions of the first perforated plate to drive the blades in the second gas chamber to rotate, thereby enhancing the lateral flow of gas within the second gas chamber and improving the uneven lateral gas distribution. Furthermore, the uniformly distributed gas is sprayed onto the wafer surface through a second through-hole with a small aperture and high distribution density, resulting in a more uniform thin film distribution or etching on the wafer surface during the deposition process, thus improving wafer quality.

[0043] Throughout this specification, the terms "one embodiment," "an embodiment," or "a specific embodiment" refer to a particular feature, structure, or characteristic described in connection with an embodiment, which is included in at least one embodiment of the present invention, but not necessarily in all embodiments. Therefore, the various representations of the phrases "in one embodiment," "in an embodiment," or "in a specific embodiment" in different places throughout the specification do not necessarily refer to the same embodiment. Furthermore, a particular feature, structure, or characteristic of any specific embodiment of the present invention may be combined with one or more other embodiments in any suitable manner. It should be understood that other variations and modifications of the embodiments of the present invention described and illustrated herein may be based on the teachings herein and will be considered part of the spirit and scope of the present invention.

[0044] The above description is merely a preferred embodiment of this application and an explanation of the technical principles employed. Those skilled in the art should understand that the scope of the utility model involved in this application is not limited to the technical solutions formed by specific combinations of the above-described technical features. It should also cover other technical solutions formed by arbitrary combinations of the above-described technical features or their equivalents without departing from the inventive concept. For example, technical solutions formed by substituting the above-described features with (but not limited to) technical features with similar functions disclosed in this application. Except for the technical features described in the specification, the remaining technical features are known to those skilled in the art. To highlight the innovative features of this utility model, the remaining technical features will not be described further here.

Claims

1. A gas spraying device for semiconductor manufacturing processes, characterized in that, include: The gas input pipeline is connected to the gas source. The first gas chamber is connected to the side of the gas input pipe away from the gas source; The first orifice plate is connected to the side of the first gas chamber away from the gas input pipe, and the first orifice plate includes a plurality of first gas holes; The second gas chamber is disposed on the side of the first orifice plate away from the first gas chamber, and blades are disposed in the second gas chamber, the blades being suspended on the side of the first orifice plate away from the first gas chamber; as well as The second orifice plate is connected to the side of the second gas chamber near the blade, and the second orifice plate includes a plurality of second air holes, wherein the distribution density of the first air holes on the first orifice plate is less than the distribution density of the second air holes on the second orifice plate. In this process, the gas from the second gas chamber, which is uniformly distributed laterally, passes through the second gas holes with a higher distribution density and is evenly sprayed onto the wafer surface.

2. The gas spraying device for semiconductor manufacturing according to claim 1, characterized in that, The connection point between the gas input pipe and the first gas chamber is located at the center of the outer surface of the first gas chamber.

3. The gas spraying device for semiconductor manufacturing according to claim 1, characterized in that, The distance from the outlet end of the gas input pipe to the first orifice plate is less than the distance from the first orifice plate to the second orifice plate.

4. The gas spraying device for semiconductor manufacturing according to claim 1, characterized in that, The diameter of the first pore is larger than the diameter of the second pore.

5. The gas spraying apparatus for semiconductor manufacturing according to claim 1, characterized in that, The blades are in at least two sets, and the two sets of blades are evenly distributed in the second gas chambers on both sides of the center of the first orifice plate.

6. The gas spraying apparatus for semiconductor manufacturing according to claim 1, characterized in that, The blade is arranged parallel to the first perforated plate.

7. The gas spraying apparatus for semiconductor manufacturing according to claim 1, characterized in that, The blades can be in the form of two, three, or four blades.

8. The gas spraying apparatus for semiconductor manufacturing according to claim 1, characterized in that, The first air holes are arranged in a ring array or a rectangular array around the center of the first perforated plate.

9. The gas spraying apparatus for semiconductor manufacturing according to claim 1, characterized in that, Multiple second pores are arranged in a ring array or a rectangular array around the center of the second perforated plate.

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