Vertical gallium boat and hydride vapor phase epitaxy equipment

Abstract

The utility model provides a vertical gallium boat and hydride vapor phase epitaxy equipment, the vertical gallium boat comprises a first chamber and at least one second chamber, the first chamber is provided with an inlet, and the second chamber is arranged above the first chamber and is communicated with the first chamber; the volume of at least one second cavity is smaller than that of the first cavity, and one second cavity is provided with an outlet; a portion of the gallium source entering the first chamber from the inlet enters the at least one second chamber from the first chamber; and a gallium-containing growth source generated by the reaction of the gallium source and the gas source is discharged through the outlet. According to the scheme, the gallium sources can be distributed in the first chamber and the second chamber in the vertical direction, and the gas source introduced from the first chamber sequentially reacts with the gallium sources in the different chambers, so that the contact area and the reaction time between the gas source and the gallium sources are prolonged, the reaction conversion rate is increased, and the yield is increased. The controllable degree of the reaction process can be improved, so that the stable quality of the gallium-containing growth source is ensured, and the method can be applied to the field of growth of gallium nitride products.

Description

TECHNICAL FIELD

[0001] The utility model relates to the technical field of semiconductor processing equipment, concretely relates to a vertical gallium boat and hydride vapor phase epitaxy equipment. BACKGROUND

[0002] In the hydride vapor phase epitaxy (HVPE) technology, the design of Ga boat plays a decisive role in the synthesis efficiency and quality of GaN. At present, the design of Ga boat in HVPE equipment mainly adopts two technical strategies, although they improve the generation efficiency of GaCl to some extent, but there are still significant limitations in practical application.

[0003] The first design strategy focuses on increasing the contact area of HCl gas and metal Ga liquid by increasing the area of Ga boat chamber, so as to improve the conversion rate of Ga into GaCl. In this design, HCl gas contacts with static Ga liquid by diffusion, thereby promoting the progress of chemical reaction. This method has been widely used in horizontal reactors, and the technology is relatively mature. However, in the vertical equipment system, the disadvantages of this strategy begin to appear; increasing the cross-sectional area of the chamber will not only cause the complex change of the hardware structure of the reactor, heating system and other structures, affect the optimization design of temperature field and flow field, but also bring complicated engineering adjustment. In addition, the problem of unreacted HCl gas directly flowing into the reaction chamber has not been effectively solved, and too much HCl will adversely affect the growth of GaN and reduce the growth quality of the material.

[0004] The second design strategy adopts the way of extending the gas inlet of HCl gas below the surface of metal gallium, so as to promote the contact of HCl gas and metal gallium in the form of bubbles, so as to generate GaCl gas. This method improves the reaction conversion rate to some extent, but due to the instability of bubble size and contact area, it is difficult to control, which limits its further optimization potential. Therefore, although the reaction conversion rate of this design is better than the first one, the uncontrollability problem limits its application range in industrial application. SUMMARY

[0005] Therefore, the utility model wants to solve the technical problem of overcoming the problem that the preparation efficiency and effect of gallium-containing growth source in the vertical equipment are limited in the prior art, and provides a vertical gallium boat and hydride vapor phase epitaxy equipment.

[0006] In order to solve the above technical problems, in the first aspect, the utility model provides a vertical gallium boat, which comprises:

[0007] The first chamber is provided with an inlet, and the inlet is used for introducing gallium source and gas source;

[0008] at least one second chamber, the at least one second chamber is arranged above the first chamber and communicates with the first chamber; wherein the volume of at least one second chamber is less than the volume of the first chamber, and one of the second chambers is provided with an outlet;

[0009] Wherein, the part of the gallium source entering the first chamber from the inlet is transferred from the first chamber to the at least one second chamber; the gallium source in the first chamber and the second chamber reacts with the gas source to generate a gallium-containing growth source which is discharged through the outlet.

[0010] The vertical gallium boat provided by the utility model firstly fills the gallium source in the first chamber into the at least one second chamber, then injects the gas source into the first chamber, so that the gallium source in different chambers is contacted in turn from bottom to top to continuously react to generate the gallium-containing growth source, finally the gallium-containing growth source is collected through the second chamber at the top, so that the preparation process has the purposes of high reaction conversion rate and high controllability.

[0011] In an embodiment of the utility model, the second chamber is arranged as a plurality of chambers, all the second chambers are stacked in turn above the first chamber, and the volume of all the second chambers decreases step by step in the stacking direction; any two adjacent second chambers communicate with each other, wherein the second chamber at the bottom communicates with the first chamber, and the outlet is arranged on the second chamber at the top.

[0012] In an embodiment of the utility model, the first chamber is provided with a first outlet, the first outlet communicates with the second chamber, the inlet is arranged on the surface close to the first chamber and the second chamber, and the first outlet is arranged on the side of the first chamber.

[0013] In an embodiment of the utility model, the first outlet is arranged on the side wall of the first chamber, which divides the first chamber into a first reaction space and a first flow space in the height direction of the first chamber, the first flow space is above the first reaction space, the liquid gallium in the first flow space moves towards the second chamber, and the volume of at least one second chamber is not less than the volume of the first flow space.

[0014] In an embodiment of the utility model, at least one second chamber is provided with a second inlet and a second outlet, and the second inlet and the second outlet are arranged on opposite sides of the second chamber respectively.

[0015] In an embodiment of the utility model, the second outlet is arranged on the side wall of the second chamber, which divides the second chamber into a second reaction space and a second flow space in the height direction, the second reaction space is above the second flow space, and the liquid gallium in the second flow space moves towards the second chamber stacked thereon;

[0016] Among the two adjacent second chambers, the volume of the upper second chamber is not less than that of the second flow space of the lower second chamber.

[0017] In an embodiment of the utility model, at least one gas baffle is arranged in the second chamber, the gas baffle is arranged in the second chamber and is close to the second inlet, one end of the gas baffle is connected to the top surface of the second chamber, and the other end of the gas baffle extends to the bottom of the second chamber, so as to adjust the flow direction of the gas source, and thus the gas source and the gallium source can fully react.

[0018] In an embodiment of the utility model, the vertical gallium boat further comprises a communication pipeline, one end of the communication pipeline is connected with a growth providing device, and the other end of the communication pipeline is directly communicated with the inlet arranged on the first chamber.

[0019] In an embodiment of the utility model, the vertical gallium boat further comprises a communication pipeline, one end of the communication pipeline is connected with a growth providing device, and the other end of the communication pipeline is directly communicated with the inlet arranged on the first chamber.

[0020] In a second aspect, the utility model provides a hydride vapor phase epitaxy equipment, which comprises the vertical gallium boat, the growth providing device and the gas reaction device, the growth providing device is used for providing a gallium source and a gas source, the first chamber of the vertical gallium boat is communicated with the growth providing device and is used for receiving the gallium source and the gas source, the second chamber of the vertical gallium boat is communicated with the gas reaction device and is used for providing a gallium-containing growth source to the gas reaction device.

[0021] Compared with the prior art, the above technical scheme of the utility model has the following advantages:

[0022] The vertical gallium boat and the hydride vapor phase epitaxy equipment can push the gallium source from bottom to top, so that the gallium source can be distributed in the first chamber and the at least one second chamber in the vertical direction, and the gas source introduced from the first chamber reacts with the gallium source in different chambers in turn, thereby prolonging the contact area and the reaction time between the gas source and the gallium source, improving the reaction conversion rate between the two, and significantly improving the controllability of the reaction process, thereby ensuring the quality stability of the gallium-containing growth source. Compared with the conventional gallium boat, the vertical gallium boat has the advantages of wide application range, high reaction efficiency, stable product quality and strong controllability, and provides a new idea for gallium boat design and use. BRIEF DESCRIPTION OF DRAWINGS

[0023] In order to make the content of the utility model more easily understood clearly, the following is according to the specific embodiment of the utility model and combines the drawings, and the utility model is further detailed.

[0024] Figure 1 It is the structure schematic diagram of the vertical gallium boat in the preferred embodiment of the utility model;

[0025] Figure 2 It is the structure schematic diagram of the vertical gallium boat in another embodiment of the utility model.

[0026] Description of the Drawings: 100, first chamber;110, first flow space;120, first reaction space;130, inlet;140, first outlet;150, communication pipeline;200, second chamber;210, second flow space;220, second reaction space;230, second inlet;240, second outlet;250, gas baffle. DETAILED DESCRIPTION

[0027] The utility model is further explained in conjunction with the drawings and specific embodiments, so that the person skilled in the art can better understand the utility model and can be implemented, but the embodiment is not as the limitation of the utility model.

[0028] The utility model provides a kind of vertical gallium boat, it includes first chamber and at least one second chamber, it is used to prepare gallium-containing growth source (such as: gallium chloride gas) by gallium source (such as: liquid gallium) and gas source (such as: hydrogen chloride gas) reaction.

[0029] First chamber is provided with inlet and first outlet, inlet and first outlet are respectively arranged at the opposite sides of first chamber, inlet is used to introduce gallium source and gas source, and first outlet is communicated with second chamber.

[0030] Further, when performing the first operation, the gallium source needs to be first injected into the first chamber through the inlet, and then the first chamber is filled with the protective gas through the inlet to increase the internal pressure of the first chamber, so as to ensure that the gallium source in the first chamber moves towards the at least one second chamber until the first chamber and the second chamber are both filled with the gallium source, thereby completing the filling process. Next, hydrogen chloride gas is injected into the first chamber through the inlet to react with the gallium source in different chambers in turn. In this process, the continuously injected hydrogen chloride gas and the generated gallium chloride gas continuously increase the internal pressure of the chamber and move upwards step by step until they are discharged. Specifically, the protective gas in the embodiment is preferably nitrogen.

[0031] Further, the first outlet is arranged on the side wall of the first chamber, which divides the first chamber into a first reaction space and a first flow space in the height direction of the first chamber. The liquid gallium in the first flow space moves towards the second chamber. The volume of the at least one second chamber is not less than the volume of the first flow space.

[0032] Further, during the process of filling the gallium source, there is gallium source in the first reaction space and the first flow space. The gallium source in the first reaction space is stably deposited in the first chamber to facilitate reaction with hydrogen chloride gas. The gallium source in the first flow space flows towards the second chamber with the injection of the protective gas. Based on this, the inlet in the embodiment is in communication with the first flow space. The first outlet is arranged on the side wall of the first chamber, and the first flow space and the first reaction space are respectively located on the two sides of the first outlet in the height direction of the first chamber. Thus, compared with the traditional gallium boat structure, the gallium boat of the utility model does not need to be manually filled with raw materials, simplifies the filling process, and is more beneficial to maintaining the airtightness of the gallium boat.

[0033] Further, the vertical gallium boat further comprises a communication pipeline. One end of the communication pipeline is connected with the growth providing device, and the other end of the communication pipeline is directly communicated with the inlet arranged on the first chamber.

[0034] Further, the communication pipeline can be further configured to have one end connected with the growth providing device, and the communication pipeline is communicated with the inlet on the first chamber after penetrating all the second chambers, thereby providing another gallium boat structure to further reduce the overall volume of the gallium boat.

[0035] Further, in the embodiment, the growth providing device is a hydride vapor phase epitaxy device, which is directly communicated with the first chamber to simplify the assembly and manufacturing process.

[0036] The second chamber is arranged above the first chamber and communicates with the first chamber; at least one of the second chambers has a volume smaller than that of the first chamber, and one of the second chambers is provided with an outlet; part of the gallium source entering the first chamber from the inlet is transferred from the first chamber to at least one of the second chambers; and the gallium source in the first chamber and the second chamber reacts with the gas source to generate a gallium-containing growth source which is discharged through the outlet.

[0037] Further, the second chamber is arranged in multiple, thereby further increasing the contact area and reaction time of the gallium source and the hydrogen chloride gas; all the second chambers are arranged above the first chamber in sequence, and the volumes of all the second chambers gradually decrease in the stacking direction; any two adjacent second chambers communicate with each other, and the second chamber at the bottom communicates with the first chamber, and the outlet is arranged on the second chamber at the top. During the injection of the gallium source, the amount of the flowable gallium source gradually decreases due to the need to fill the multiple chambers, and in order to ensure that it can be distributed in all the chambers, the volumes of the multiple second chambers need to be controlled to ensure that there is at least part of the flowable gallium source in each chamber.

[0038] Further, the second chamber is arranged in multiple, thereby further increasing the contact area and reaction time of the gallium source and the hydrogen chloride gas; all the second chambers are arranged above the first chamber in sequence, and the volumes of all the second chambers gradually decrease in the stacking direction; any two adjacent second chambers communicate with each other, and the second chamber at the bottom communicates with the first chamber, and the outlet is arranged on the second chamber at the top. During the injection of the gallium source, the amount of the flowable gallium source gradually decreases due to the need to fill the multiple chambers, and in order to ensure that it can be distributed in all the chambers, the volumes of the multiple second chambers need to be controlled to ensure that there is at least part of the flowable gallium source in each chamber.

[0039] Further, the second outlet is arranged on the side wall of the second chamber, which divides the second chamber into a second reaction space and a second flow space in the height direction, and the second reaction space is above the second flow space, and the liquid gallium in the second flow space moves towards the second chamber stacked thereon; the volume of the second chamber above is not less than that of the second flow space of the second chamber below in the two adjacent second chambers, so as to avoid the overflow of the liquid in the second chamber.

[0040] Further, in order to improve the space utilization of the vertical gallium boat, the optimal structure is configured as follows: the volume of the second chamber at the bottom is the same as that of the first flow space, and the volume of the second chamber above is the same as that of the second flow space below in the two adjacent second chambers.

[0041] Further, at least one gas baffle is arranged in the second chamber, and the gas baffle is arranged in the second chamber and close to the second inlet, one end of the gas baffle is connected to the top surface of the second chamber, and the other end of the gas baffle extends to the bottom of the second chamber, so as to adjust the flow direction of the gas source and further enable the gas source to fully react with the gallium source.

[0042] Further, the number of the second chambers can be 2, 3 or more, and the number of the second chambers is matched with the structure of the vertical gallium boat to maximize the generation efficiency and utilization efficiency of GaCl, so as to achieve the purpose of cost saving and obtain high-quality self-supporting gallium nitride crystal.

[0043] The utility model also provides a kind of hydride vapor phase epitaxy equipment, which comprises the vertical gallium boat, the growth providing equipment and the gas reaction device described above, and the growth providing equipment is used to provide gallium source and gas source;The first chamber of the vertical gallium boat is communicated with the growth providing equipment, for receiving gallium source and gas source;The second chamber of the vertical gallium boat, which is provided with an outlet, is communicated with the gas reaction device, for providing gallium-containing growth source to the gas reaction device.

[0044] Further, ammonia gas is introduced into the gas reaction device, and the gallium chloride gas generated by the vertical gallium boat reacts with the ammonia gas after entering the gas reaction device to realize the growth of gallium nitride products.

[0045] It can be understood that the working principle and structure of the growth providing equipment and the gas reaction device are the same as those in related technologies, and will not be repeated here.

[0046] The utility model provides a kind of gallium boat for containing gallium source suitable for vertical HVPE, and space utilization is high, gallium source and HCl can be fully reacted, the efficiency of generating GaCl is high, and it is convenient to fill gallium source

[0047] It should be noted that in the traditional HVPE equipment, the replenishment of metallic gallium is usually realized by adding multiple filling ports, which not only increases the complexity of the equipment, but also may adversely affect the air tightness, leading to gas leakage and affecting the reaction quality. In addition, frequent replenishment operations are not only troublesome, but also prone to equipment damage due to material adaptability and bumping problems during operation. The gallium boat for containing gallium source suitable for vertical HVPE provided by the utility model ingeniously integrates precise pressure filling technology, making the addition process of gallium source accurate and simple, without the need for additional filling ports in each chamber. On the one hand, this makes the entire HVPE equipment more compact, thereby greatly improving the integration of the overall equipment. On the other hand, it reduces potential leakage points, ensuring the stability and safety of long-term operation of the equipment. Example One

[0048] Referring to Figure 1 As shown in the figure, the present embodiment provides a vertical gallium boat, which comprises a first chamber 100 and three second chambers 200, for preparing gallium chloride gas by reacting gallium source with hydrogen chloride gas.

[0049] The first chamber 100 is provided with an inlet 130 and a first outlet 140. The inlet 130 is arranged on the surface of the first chamber 100 close to the second chamber 200, and is used for introducing a gallium source and a gas source. The first outlet 140 is arranged on the side of the first chamber 100, and is in communication with the second chamber 200 located at the bottom.

[0050] Further, the first outlet 140 is arranged on the side wall of the first chamber 100, which divides the first chamber 100 into a first reaction space 120 and a first flow space 110 in the height direction of the first chamber 100. The first flow space 110 is located above the first reaction space 120. The liquid gallium in the first flow space 110 moves towards the second chamber 200. The volume of the second chamber 200 located at the bottom is greater than that of the first flow space 110.

[0051] Further, the vertical gallium boat further comprises a communication pipeline 150. One end of the communication pipeline 150 is connected with a growth providing device, and the other end of the communication pipeline 150 is directly connected with the inlet 130 arranged on the first chamber 100.

[0052] Further, in the embodiment, the growth providing device is a hydride vapor phase epitaxy device. The communication pipeline 150 is connected with the inlet of the first chamber 100 after penetrating through all the second chambers 200, so as to be connected with the hydride vapor phase epitaxy device, thereby reducing the overall volume.

[0053] The three second chambers 200 are arranged in sequence above the first chamber 100 and are in communication with the first chamber 100. Specifically, the second chamber 200 located at the bottom is in communication with the second chamber 200 located in the middle, and the second chamber 200 located in the middle is in communication with the second chamber 200 located at the top. The volumes of the three second chambers 200 are all less than that of the first chamber 100. The second chamber 200 located at the top is provided with an outlet 300.

[0054] Further, in the stacking direction of the three second chambers 200, the volumes of the three second chambers 200 gradually decrease.

[0055] Further, the three second chambers 200 are all provided with a second inlet 230 and a second outlet 240. The second inlet 230 and the second outlet 240 are arranged on opposite sides of the second chamber 200, respectively. For example, as shown in FIG. 1, the second inlet 230 is arranged on the left side of the second chamber 200, and the second outlet 240 is arranged on the right side of the second chamber 200. Figure 1

[0056] ​Further, the second outlet 240 is arranged on the sidewall of the second chamber 200, which divides the second chamber 200 in the height direction thereof into the second reaction space 220 and the second flow space 210, the second reaction space 220 is located above the second flow space 210, and the liquid gallium in the second flow space 210 moves towards the second chamber 200 stacked thereon; wherein, in the two adjacent second chambers 200, the volume of the upper second chamber 200 is not less than the volume of the second flow space 210 of the lower second chamber 200.

[0057] Specifically, the height of the first chamber 100 in the embodiment is 45 mm, and the distance between the first outlet 140 and the bottom surface of the first chamber 100 is 15 mm; the bottom areas of the three second chambers 200 are the same, and the heights thereof are arranged in sequence from bottom to top as 35 mm, 20 mm and 15 mm. Among them, in the second chamber 200 at the bottom, the distance between the second inlet 230 and the bottom surface thereof is 30 mm, and the distance between the second outlet 240 and the bottom surface thereof is 12 mm; in the second chamber 200 in the middle, the distance between the second inlet 230 and the bottom surface thereof is 15 mm, and the distance between the second outlet 240 and the bottom surface thereof is 9 mm; in the second chamber 200 at the bottom, the distance between the second inlet 230 and the bottom surface thereof is 12 mm, and the distance between the second outlet 240 and the bottom surface thereof is not less than 10 mm.

[0058] Based on this, in the embodiment, after the gallium source filling process is completed, the liquid surface height of the gallium source remaining in the first chamber 100 is 45 mm. Specifically, when the gallium source is driven to flow, nitrogen gas needs to be introduced into the first chamber 100 through the communication pipeline 150 to increase the gas pressure in the first chamber 100, so that the gallium source flows from the first outlet 140 to the second chamber 200 at the bottom until the gallium source in the first chamber 100 is lower than the first outlet 140, at this time, the gallium source with a height of 30 mm in the first chamber 100 is pushed into the second chamber 200 at the bottom, and the remaining gallium source with a height of 15 mm in the first chamber 100.

[0059] Next, under the action of gas pressure, the gallium source in the second chamber 200 at the bottom flows to the second chamber 200 in the middle until the gallium source in the second chamber 200 at the bottom is lower than the second outlet 240 above it, at this time, in the second chamber 200 at the bottom, the gallium source with a height of 18 mm is pushed into the second chamber 200 in the middle, and the remaining gallium source with a height of 12 mm in it.

[0060] Similarly, the gallium source with a height of 9 mm in the second chamber 200 in the middle is distributed in the second chamber 200 in the top according to the same process, and the remaining gallium source with a height of 9 mm inside is left. Based on the above-mentioned replenishment process of the gallium source, the gallium source with a liquid level of 15 mm, 12 mm, 9 mm and 9 mm is left in the first chamber 100 and the three second chambers 200 from bottom to top in turn, and the filling of the gallium source is completed. Compared with the conventional chamber filling process, the vertical gallium boat in the embodiment realizes the purposes of simplifying the action process, improving the equipment airtightness and the like while performing accurate filling.

[0061] It can be understood that the height and bottom area of the first chamber 100 and the second chamber 200 can be designed according to specific application needs, and are not limited to the above examples.

[0062] Further, the vertical gallium boat in the embodiment expands the liquid level of the gallium source to be reacted by four times. In the process of reacting the gallium source with the gaseous source, the gaseous source is input to the first chamber 100 through the communication pipeline 150, and then passes through the first outlet 140, the plurality of second inlets 230 and the plurality of second outlets 240 in turn, so as to react with the gallium source in the first chamber 100 and the three second chambers 200 from bottom to top in turn, and make the generated gas product escape from the outlet of the second chamber 200 in the top, thereby completing the efficient and thorough reaction process.

[0063] Further, the three second chambers 200 are each provided with a gas baffle 250, which is arranged close to the second inlet 230, one end of which is connected to the top surface of the second chamber 200, and the other end of which extends to the bottom of the second chamber 200. In the above process, the gas baffle 250 can guide the hydrogen chloride gas to flow towards the gallium source, thereby further improving the contact degree between the gallium source and the gaseous source.

[0064] After the reaction is completed, the generated gallium chloride product enters the substrate growth chamber of the hydride vapor phase epitaxy equipment, and reacts with ammonia gas to realize the growth of gallium nitride product.

[0065] In the above process, the height of the different chambers in the vertical gallium boat can be matched with the corresponding reaction efficiency. Specifically, since the concentration of the gaseous source in the first chamber 100 is the highest, the gallium source consumed by the first chamber 100 is also the most, and therefore the gallium source to be reacted left in the first chamber 100 is also the most. With the flow and consumption of the gaseous source, the three second chambers 200 can reserve the corresponding amount of gallium source that can be completely reacted, thereby realizing the complete conversion of the gaseous source, maximizing the conversion efficiency and the utilization rate of the medicine, and at the same time, the above configuration is also more conducive to the timely replenishment of the gallium source by calculating the reaction efficiency. Embodiment Two

[0066] Reference Figure 2As shown, the embodiment provides another vertical gallium boat, the connection relationship between the first chamber 100 and the second chamber 200 and the operation process are the same as those of the first embodiment, and thus will not be described in detail. In the embodiment, the first chamber 100 protrudes from the second chamber 200 in the horizontal direction; one end of the connecting pipeline 150 is externally connected to the growth providing device, and the other end is directly connected to the first chamber 100 to simplify the assembly process. Specifically, the first chamber 100 can be lengthened or widened in the horizontal direction to provide a connection position for the connecting pipeline 150. Embodiment three

[0067] The embodiment provides a hydride vapor phase epitaxy device, which comprises the vertical gallium boat of the first embodiment, a growth providing device and a gas reaction device; the growth providing device is used for providing a gallium source and a gas source; the first chamber 100 of the vertical gallium boat is in communication with the growth providing device and is used for receiving the gallium source and the gas source; and the second chamber 200 of the vertical gallium boat is in communication with the gas reaction device and is used for providing the gallium-containing growth source to the gas reaction device.

[0068] Obviously, the above embodiments are merely examples for clear illustration, and are not intended to limit the embodiments. Based on the above description, those skilled in the art can make other different forms of changes or variations. Here, it is not necessary and impossible to enumerate all the embodiments. The obvious changes or variations derived therefrom are still within the protection scope of the present application.

Claims

1. A vertical gallium boat, characterized by: The vertical gallium boat comprises: a first chamber (100) provided with an inlet for a gallium source and a gas source; at least one second chamber (200) arranged above the first chamber (100) and in communication with the first chamber (100), wherein the volume of the at least one second chamber (200) is smaller than that of the first chamber (100), and one of the second chambers (200) is provided with an outlet. The part of the gallium source entering the first chamber (100) from the inlet enters the at least one second chamber (200) from the first chamber (100), and the gallium-containing growth source generated by the reaction of the gallium source and the gas source in the first chamber (100) and the second chamber (200) is discharged through the outlet.

2. The vertical gallium boat of claim 1, wherein: The second chambers (200) are arranged in multiple, and all the second chambers (200) are stacked above the first chamber (100) in sequence, and the volume of all the second chambers (200) decreases step by step in the stacking direction; any two adjacent second chambers (200) are in communication with each other, wherein the second chamber (200) at the bottom is in communication with the first chamber (100), and the outlet is arranged on the second chamber (200) at the top.

3. The vertical gallium boat of claim 1, wherein: The first chamber (100) is provided with a first outlet (140) in communication with the second chamber (200), the inlet is arranged on the surface close to the second chamber (200) of the first chamber (100), and the first outlet (140) is arranged on the side surface of the first chamber (100).

4. The vertical gallium boat according to claim 3, wherein: The first outlet (140) is arranged on the side wall of the first chamber (100), which divides the first chamber (100) into a first reaction space (120) and a first flow space (110) in the height direction, the first flow space (110) is above the first reaction space, the liquid gallium in the first flow space (110) moves towards the second chamber (200), and the volume of the at least one second chamber (200) is not less than that of the first flow space (110).

5. The vertical gallium boat of any one of claims 1-4, wherein: The at least one second chamber (200) is provided with a second inlet (230) and a second outlet (240), and the second inlet (230) and the second outlet (240) are arranged on opposite sides of the second chamber (200), respectively.

6. The vertical gallium boat of claim 5, wherein: The second outlet (240) is arranged on the side wall of the second chamber (200), which divides the second chamber (200) into a second reaction space (220) and a second flow space (210) in the height direction, the second reaction space (220) is above the second flow space, and the liquid gallium in the second flow space (210) moves towards the second chamber (200) stacked thereon; The volume of the second flow space (210) of the second chamber (200) located above is not less than the volume of the second flow space (210) of the second chamber (200) located below.

7. The vertical gallium boat of claim 5, wherein: The second chamber (200) is provided with at least one gas baffle (250), which is arranged in the second chamber (200) and close to the second inlet (230), and one end of which is connected to the top surface of the second chamber (200) and the other end of which extends to the bottom of the second chamber (200), so as to adjust the flow direction of the gas source and make the gas source fully react with the gallium source.

8. The vertical gallium boat of claim 1, wherein: The vertical gallium boat further comprises a communication pipeline (150), one end of which is connected to the growth providing device, and the other end of which is directly communicated with the inlet arranged on the first chamber (100).

9. The vertical gallium boat of claim 1, wherein: The vertical gallium boat further comprises a communication pipeline (150), one end of which is connected to the growth providing device, and the other end of which is directly communicated with the inlet arranged on the first chamber (100).

10. A hydride vapor phase epitaxy apparatus, characterized by: The vertical gallium boat, the growth providing device and the gas reaction device according to any one of claims 1-9, wherein the first chamber (100) of the vertical gallium boat is communicated with the growth providing device for receiving the gallium source and the gas source; the second chamber (200) provided with the outlet in the vertical gallium boat is communicated with the gas reaction device for providing the gallium-containing growth source to the gas reaction device.

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