Removal unit and removal device for photoresist on surface layer of wafer

Abstract

The utility model discloses a removal unit and a removal device for photoresist on a surface layer of a wafer, the wafer comprises a substrate, an anti-reflection layer is arranged on the substrate, a photoresist layer is arranged on the anti-reflection layer, and the removal unit comprises a first shell; the first bearing part is arranged in the first shell and is used for bearing a wafer; the light source is detachably arranged in the first shell so as to emit light with the wavelength of 5-600 nm; the light is used for irradiating the photoresist layer, so that the photoacid generator in the photoresist generates a photochemical reaction, and the photoresist layer on the anti-reflection layer is integrally removed. The removing device comprises a containing cavity, a wafer transferring device, a baking unit, a developing unit, a drying unit and a removing unit. The removing unit, the baking unit, the developing unit and the drying unit are sequentially arranged in the accommodating cavity; and the wafer transfer device is arranged in the accommodating cavity and is used for transferring the wafer to any unit. According to the invention, the anti-reflection layer is not damaged when the photoresist layer is removed, and the process cost is reduced.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor devices, in particular to a wafer surface photoresist removal unit and removal device. BACKGROUND

[0002] In the field of integrated circuit manufacturing, the photoresist removal process is the first process to define the pattern, and the accuracy of the size and profile of the pattern is crucial to the subsequent etching process, and the pattern defects introduced during the photoresist removal process are also not allowed. The photoresist removal process can remove the formed photoresist pattern and defect pattern by using a photoresist (PR) removal process, and then define the pattern again through a secondary coating / exposure / development process. Through such a process, the discovered defects can be prevented from being transferred to the substrate film, thereby providing the yield of the product.

[0003] In the prior art, the photoresist removal is generally achieved by a wet etching process or using an oxygen-containing plasma + chemical liquid cleaning to remove the photoresist material on the surface of the silicon wafer, which will cause the bottom anti-reflective coating (BARC) and the surface silicon oxide anti-reflective coating (SOC / SiARC) of the bottom layer to be damaged and unable to be reused, thereby increasing the process cost.

[0004] Therefore, it is necessary to provide a new wafer surface photoresist removal unit and removal device to solve the above problems in the prior art. SUMMARY

[0005] The present application aims to provide a wafer surface photoresist removal unit and removal device to remove the photoresist on the surface of the wafer without damaging the oxidation-resistant layer, such as the bottom anti-reflective coating (BARC) and the surface silicon oxide anti-reflective coating (SOC / SiARC), thereby reducing the process cost.

[0006] To achieve the above-mentioned purpose, the technical solution of the present application is as follows:

[0007] A wafer surface photoresist removal unit, the wafer comprising a substrate, the substrate being provided with an anti-reflective layer, the anti-reflective layer being provided with a photoresist layer, the removal unit comprising a first housing;

[0008] A first carrier is arranged in the first housing for carrying the wafer;

[0009] A light source is detachably arranged in the first housing to emit light with a wavelength of 5-600 nm; the light is used to irradiate the photoresist layer, so that the photochemical reaction of the photoacid generator in the photoresist layer occurs, so that the photoresist layer on the anti-reflective layer is removed as a whole.

[0010] A wafer surface photoresist removing device, comprising a containing cavity, a wafer transferring device, a baking unit, a developing unit, a drying unit and a removing unit;

[0011] The removing unit, the baking unit, the developing unit and the drying unit are sequentially arranged in the containing cavity;

[0012] The wafer transferring device is arranged in the containing cavity and is used for transferring the wafer to any unit.

[0013] By using the above technical scheme, first, the photoresist is exposed to light of a specific wavelength, so that the photochemical reaction of the photoacid generator in the photoresist on the wafer is generated, then the baking and developing processes are continuously carried out on the wafer production line or in the removing device, so that the photoresist is removed, the bottom anti-glare coating, the silicon-based anti-glare coating and the silicon oxide coating of the bottom layer can be reused, and the process conditions are mild, and the thin film or structure of the bottom layer is almost not damaged.

[0014] Optionally, the light source is one or more of a mercury-vapor lamp, deep ultraviolet light or extreme ultraviolet light.

[0015] Optionally, the device further comprises a light filter, which is detachably arranged in the first shell and is disposed between the first carrier and the light source, so as to filter the light emitted by the light source.

[0016] Optionally, the first shell is provided with a distance detection assembly, and the distance detection assembly comprises:

[0017] a detection member arranged in the first carrier and used for emitting and receiving signals;

[0018] a reflection member arranged in the first shell, and a distance between the reflection member and the detection member is the same as a distance between the light source and the first carrier;

[0019] The signals emitted by the detection member are re-received by the detection member after being reflected by the reflection member, so as to detect the distance between the first carrier and the light source.

[0020] Optionally, the device further comprises a control assembly, and the control assembly comprises:

[0021] a first driving member connected to the first carrier and used for driving the first carrier to rotate;

[0022] a second driving member arranged in the first shell and connected to the first driving member, so as to drive the first driving member and the first carrier to move away from or close to the light source.

[0023] Optionally, the baking unit comprises a second housing and a heating plate rotatably arranged in the second housing for heating the wafer.

[0024] The wafer transfer device transfers the wafer in the baking unit to the second carrier, the first spray head sprays the developing liquid to the wafer for developing, and after the developing is finished, the second spray head sprays the cleaning liquid for cleaning.

[0025] Optionally, the developing unit comprises a third housing.

[0026] A second carrier is rotatably arranged in the third housing for carrying the wafer.

[0027] A first spray head is arranged in the third housing for spraying developing liquid.

[0028] A second spray head is arranged in the third housing for spraying cleaning liquid.

[0029] The wafer transfer device transfers the wafer in the baking unit to the second carrier, the first spray head sprays the developing liquid to the wafer for developing, and after the developing is finished, the second spray head sprays the cleaning liquid for cleaning.

[0030] Optionally, the drying unit comprises a fourth housing.

[0031] A third carrier is rotatably arranged in the fourth housing.

[0032] A drying spray head is arranged in the fourth housing for drying the wafer.

[0033] The wafer transfer device transfers the wafer in the baking unit to the second carrier, the first spray head sprays the developing liquid to the wafer for developing, and after the developing is finished, the second spray head sprays the cleaning liquid for cleaning.

[0034] Optionally, the accommodating cavity side wall is provided with a carrying port penetrating through for passing the wafer. BRIEF DESCRIPTION OF DRAWINGS

[0035] Figure 1 It is an internal structure sectional view of the removing unit of the embodiment of the present application.

[0036] Figure 2 It is an internal structure sectional view of the removing device of the embodiment of the present application.

[0037] Figure 3 It is an internal structure sectional view of the baking unit of the embodiment of the present application.

[0038] Figure 4 It is an internal structure sectional view of the developing unit of the embodiment of the present application.

[0039] Figure 5The internal structure of the drying unit of the embodiment of the present application is shown in a cross-sectional view.

[0040] Reference signs:

[0041] 100, first housing; 110, first carrier; 120, light source; 130, light filter; 140, distance detection assembly; 141, detection member; 142, reflection member; 150, control assembly; 151, first driving member; 152, second driving member; 160, temperature sensor; 170, humidity sensor; 300, accommodating cavity; 310, wafer transfer device; 320, baking unit; 321, second housing; 322, heating plate; 330, developing unit; 331, third housing; 332, second carrier; 333, first showerhead; 334, second showerhead; 340, drying unit; 341, fourth housing; 342, third carrier; 343, drying showerhead; 350, carrying port; 360, wafer loading box. DETAILED DESCRIPTION

[0042] In order to make the objectives, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be described clearly and completely below. Obviously, the described embodiments are some but not all of the embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the scope of the present application. Unless otherwise defined, the technical terms or scientific terms used herein should be understood as the common meanings of the same by those of ordinary skill in the art to which the present application belongs. The words “comprise” and the like used herein mean that the elements or objects before the words encompass the elements or objects listed after the words and their equivalents, and do not exclude other elements or objects.

[0043] The above description will be further explained with reference to the accompanying drawings. Figures 1-5 The specific embodiments of the present application are further described in detail.

[0044] Currently, the photoresist removal process is mainly divided into three categories:

[0045] First, the WET etching process uses a wet etching method to remove all polymer coatings together, including photoresist (PR), bottom anti-reflective coating / photoresist (BARC / PR), and silicon oxide coating / silicon-based anti-reflective coating / photoresist (SOC / SiARC / PR). The cleaning solution is a mixture of 98% sulfuric acid and 30% hydrogen peroxide (volume ratio 4:1). However, this method cannot completely clean the silicon-based anti-reflective coating with high silicon content, requiring alternating cleaning with heated sulfuric acid / hydrogen peroxide mixtures and ammonia hydroxide / hydrogen peroxide. This process is complex, time-consuming, and generates strong acid waste, resulting in poor environmental performance. Furthermore, this method cannot remove only the photoresist, rendering the silicon oxide / silicon-based anti-reflective coating unusable, which undoubtedly increases process costs.

[0046] Secondly, based on the ETCH+WET equipment, oxygen-containing plasma combined with chemical liquid cleaning is used to remove photolithography material from the silicon wafer surface. Oxygen-containing plasma removes C / H / O-containing photolithography material or photoresist, followed by fluorine-containing plasma to remove the silicon-based anti-reflective coating. Finally, acid and deionized water are used to clean the silicon wafer surface. This method requires a combination of dry and wet etching processes, resulting in high equipment investment and the need for customized etching process parameters. Furthermore, this method cannot remove only photoresist, rendering the silicon oxide coating / silicon-based anti-reflective coating unusable, undoubtedly increasing process costs.

[0047] Third, based on TRACK equipment, the photoresist is dissolved using a good organic solvent and then removed by centrifugation. Because the photoresist has already undergone a pre-baking (PAB) or post-exposure baking (PEB) process to form a hard film, its dissolution rate in the solvent is slow, requiring a rinsing time of more than 15 minutes to remove the photoresist. This method is time-consuming, increases the process time when removing multiple silicon wafers, and easily generates a large amount of organic waste liquid.

[0048] To address the aforementioned problems, embodiments of the present invention provide a removal unit for removing a photoresist layer from the surface of a wafer. The wafer includes a substrate, an anti-reflection layer coated on the substrate, and a photoresist layer coated on the anti-reflection layer. The anti-reflection layer is used to reduce light reflection between the substrate and the photoresist.

[0049] The removal unit includes a first housing 100;

[0050] The first support member 110 is disposed inside the first housing 100 and is used to support the wafer;

[0051] The light source 120 is detachably disposed within the first housing 100 to emit light with a wavelength of 5-600nm; the light is used to irradiate the photoresist layer, causing the photoacid generator in the photoresist to undergo a photochemical reaction, so that the photoresist layer on the antireflective layer is completely removed.

[0052] In some embodiments, after the photoresist layer is removed, there is no residue of the photoresist layer on the antireflection layer, and the removal process of the photoresist layer does not damage the antireflection layer.

[0053] In some embodiments, the removal unit is a process unit on a wafer production line, i.e., the removal unit is integrated on the wafer production line, so that the wafer does not need to be transferred during processing, and the wafer can pass through the removal unit in the original production process to complete the removal of the photoresist layer; the specific structure of the wafer production line is a prior art and is not described here.

[0054] In some embodiments, the first carrier 110 is arranged in the first housing 100 and can rotate in the first housing 100 or move in a vertical direction, and the first carrier 110 is used to place the wafer to drive the wafer to rotate in the first housing 100 or move in a vertical direction.

[0055] In some embodiments, the light source 120 is detachably arranged, wherein the light source 120 can be different types of light, and in some specific embodiments, the light source 120 is one or more of a high-pressure mercury lamp or deep ultraviolet light (DPP) or extreme ultraviolet light (LPP), so that the light source 120 can emit light of different wavelengths. In some more specific embodiments, the light source 120 can emit light with a wavelength of 5-600 nm.

[0056] In some embodiments, the light source 120 is a high-pressure mercury lamp.

[0057] In some embodiments, the high-pressure mercury lamp adopts a linear lamp tube or a ring-shaped lamp tube, or a combination of a linear lamp tube and a ring-shaped lamp tube.

[0058] In some embodiments, the light source 120 is deep ultraviolet light.

[0059] In some embodiments, the light source 120 is extreme ultraviolet light.

[0060] In some embodiments, the light source 120 is a combination of any two of a high-pressure mercury lamp, deep ultraviolet light, and extreme ultraviolet light.

[0061] In some embodiments, the light source 120 is a combination of a high-pressure mercury lamp, deep ultraviolet light, and extreme ultraviolet light.

[0062] More specifically, the wavelength of the light emitted by the high-pressure mercury lamp and the deep ultraviolet light is 200nm-600nm, and the wavelength of the light emitted by the extreme ultraviolet light is 5nm-30nm. That is, the photoresist layer is irradiated by the light source 120 with a specific wavelength, and the light emitted by the light source 120 can cause a photochemical reaction of the photoacid generator (PAG) in the photoresist layer, and then the photoresist layer on the wafer surface is removed through the exposure baking (PEB) and development (DEV) processes on the wafer production line. Specifically, the bottom anti-reflective coating (BARC), the surface silicon oxide anti-reflective coating (SOC / SiARC) can be reused.

[0063] In order to better adjust the wavelength of the light, the removal unit further comprises a light filter 130, which is detachably arranged in the first housing 100 and is disposed between the first carrier 110 and the light source 120 to filter the light emitted by the light source 120.

[0064] In some embodiments, the light filter 130 is a narrow-band filter. Since the photoacid generator in the photoresist layer has high photosensitivity, the wavelength of the light is controlled within a suitable range, which can improve the conversion efficiency of the photoacid generator, thereby facilitating the removal of the photoresist layer. In some specific embodiments, the light filter 130 is a narrow-band filter with a peak wavelength of 190nm, 250nm, 365nm or 436nm. In some more specific embodiments, one or a combination of the above narrow-band filters is used to limit the wavelength of the light emitted by the light source 120 within a narrow range. The specific selection or combination of the narrow-band filter is not limited here, and in actual use, the wavelength of the light emitted by the light source 120 is determined according to the photosensitivity wavelength of the photoacid generator in the photoresist layer, so as to adjust the power of the light source 120 to increase the light intensity of the light of a specific wavelength, and to enhance the degree of photochemical reaction of the photoacid generator and to enhance the conversion rate of the photoacid generator.

[0065] Since the first carrier 110 can move in the vertical direction within the first housing 100, a distance detection assembly 140 is further arranged in the first housing 100, and the distance detection assembly 140 comprises:

[0066] A detection member 141 arranged in the first carrier 110 for emitting and receiving signals;

[0067] A reflecting member 142 arranged in the first housing 100, and the distance between the reflecting member 142 and the detection member 141 is the same as the distance between the light source 120 and the first carrier 110;

[0068] The signal emitted by the detection member 141 is reflected by the reflecting member 142 and then re-received by the detection member 141 to detect the distance between the first carrier 110 and the light source 120.

[0069] In some embodiments, a control system (e.g., a central control computer) is further included, which is electrically connected with the components in the first housing 100. The detection member 141 and the reflection member 142 cooperate to detect the distance between the first carrier 110 and the light source 120, and can transmit the position information to the control system. The control system adjusts the up-and-down movement of the first carrier 110 according to the preset position value of the first carrier 110, so as to move close to or away from the light source 120.

[0070] In some embodiments, the detection member 141 is an interferometer position sensor, and the reflection member 142 is an interferometer mirror.

[0071] In some embodiments, for different photoresist layers, it is necessary to ensure the uniformity of exposure, that is, in the photoetch process, the uniformity of exposure is crucial to obtain a high-quality photoetch pattern. Therefore, by precisely controlling the distance between the light source 120 and the wafer placed on the first carrier 110, it can be ensured that the light intensity received by the entire wafer surface is uniform, thereby ensuring the uniform removal of the photoresist layer. In addition, it is also necessary to control the exposure dose, which refers to the total amount of light energy received by the wafer surface. Therefore, by adjusting the distance between the light source 120 and the wafer, the exposure dose can be controlled, thereby affecting the degree of photochemical reaction of the photoresist layer and ensuring that the photoresist layer can be effectively removed. Adjusting the distance between the light source 120 and the wafer can also prevent overexposure or underexposure, that is, if the distance between the light source 120 and the wafer is not appropriate, it may cause overexposure or underexposure in some areas on the wafer, thereby causing the photoresist layer to overreact and affecting the integrity of the underlying material; underexposure may cause the photoresist layer to be incompletely removed; in addition, adjusting the distance between the light source 120 and the wafer can also adapt to different types of photoresist layers: different photoresist layers may have different sensitivities to light. By adjusting the distance between the light source 120 and the wafer, the exposure conditions can be optimized for a specific type of photoresist layer.

[0072] In order to facilitate the movement of the first carrier 110 in the first housing 100, the removal unit further includes a control assembly 150, which includes:

[0073] A first driving member 151 is connected to the first carrier 110 to drive the rotation of the first carrier 110.

[0074] A second driving member 152 is arranged in the first housing 100 and connected with the first driving member 151 to drive the first driving member 151 and the first carrier 110 to move away from or close to the light source 120.

[0075] In some embodiments, the first driving member 151 is an electric motor; the first driving member 151 is directly connected with the first bearing member 110, for example, by a key connection; or the first driving member 151 is indirectly connected with the first bearing member 110, for example, by a belt transmission, without limitation, and in actual use, different connection modes of the electric motor are set according to different use conditions. In some embodiments, the first driving member 151 can be connected with the second driving member 152 or the inner wall of the first housing 100, without limitation, and the first driving member 151 is mainly capable of driving the first bearing member 110 to rotate when starting. It is worth noting that when the first driving member 151 is connected with the second driving member 152, the two can be fixedly connected, and at this time, the second driving member 152 can drive the first driving member 151 and the first bearing member 110 to move along the vertical direction at the same time; when the first driving member 151 is connected with the inner wall of the first housing 100, the first driving member 151 needs to be capable of sliding on the inner wall of the first housing 100, so that when the second driving member 152 drives the first bearing member 110 to move along the vertical direction, the first driving member 151 can move synchronously with the first bearing member 110 to drive the first bearing member 110 to rotate.

[0076] In some embodiments, the second driving member 152 is an electric motor or an air cylinder, and is arranged inside the first housing 100 to drive the first bearing member 110 to be capable of moving along the vertical direction to approach or move away from the light source 120. When the second driving member 152 is an electric motor, the inner wall of the first housing 100 is provided with a rack capable of sliding along the vertical direction on the inner wall of the first housing 100, and a gear is keyed connected on the rotating shaft of the electric motor, the gear is engaged with the rack, so that the electric motor is capable of driving the rack to move when starting, and the rack is fixed with the first driving member 151, so that the rack is capable of driving the first driving member 151 to move in the movement process, thereby driving the first bearing member 110 to move. When the second driving member 152 is an air cylinder, the second driving member 152 is fixedly arranged on the inner side bottom of the first housing 100, and the piston rod of the second driving member 152 is fixedly arranged on the bottom of the first driving member 151, so that the second driving member 152 is capable of driving the first driving member 151 to move when starting, thereby driving the first bearing member 110 to move. In this embodiment, the first driving member 151 and the second driving member 152 are both electric motors as an example. It is worth noting that the rack arranged in the first housing 100 is a prior art, for example, sliding by using a slide rail, which is not described herein.

[0077] In some more specific embodiments, the first bearing 110 is provided with a support, the first driving member 151 is fixedly arranged on the support to drive the first bearing 110 to rotate, and the detection member 141 is arranged on the support and flush with the end surface of the first bearing 110. The second driving member 152 is fixedly arranged on the inner wall of the first shell 100. The second driving member 152 is an electric cylinder, the support is connected with the second driving member 152, and the second driving member 152 drives the support to slide in the vertical direction, so that the first bearing 110 moves in the vertical direction.

[0078] In addition, the temperature sensor 160 and the humidity sensor 170 are arranged in the first shell 100 to detect the temperature and humidity in the first shell 100. Meanwhile, the temperature sensor 160 and the humidity sensor 170 can feed back the detected data to the control system. In order to control the temperature and humidity in the first shell 100, a heater and a humidifier can be arranged in the first shell 100 to control the temperature according to the feedback of the temperature sensor 160 and the humidity sensor 170.

[0079] In the removal process of the photoresist layer, since the removal unit needs to be integrated into the production line of the wafer, the wafer will sequentially pass through a cold plate, a glue coating, a pre-baking (PAB), an exposure, a post-baking (PEB) and a development, and then enter the next process, wherein the exposure step utilizes the above-mentioned removal unit, and after the above-mentioned steps, the photoresist layer on the surface of the wafer is removed.

[0080] Embodiments of the present application also provide a removal device, which comprises a containing cavity 300, a wafer transfer device 310, a baking unit 320, a developing unit 330, a drying unit 340 and a removal unit;

[0081] The removal unit, the baking unit 320, the developing unit 330 and the drying unit 340 are sequentially arranged in the containing cavity 300;

[0082] The wafer transfer device 310 is arranged in the containing cavity 300 and is used to transfer the wafer to any unit.

[0083] In some embodiments, the removal unit, the baking unit 320, the developing unit 330 and the drying unit 340 are sequentially arranged in the containing cavity 300, which can be arranged in parallel or in a ring shape, so that the wafer can be transferred from one unit to another unit more quickly.

[0084] In some embodiments, the removal unit, the baking unit 320, the developing unit 330 and the drying unit 340 are randomly distributed in the containing cavity 300, as long as the wafer transfer device 310 can drive the wafer to be transferred to the corresponding unit.

[0085] In some embodiments, the wafer transfer device 310 is a robot. In some specific embodiments, in order to facilitate the wafer transfer device 310 to transfer the wafer, a track is arranged in the accommodation cavity 300 to facilitate the wafer transfer device 310 to move, and to reduce the interference from different units or the inner wall of the accommodation cavity 300 during clamping the wafer.

[0086] In some embodiments, the wafer transfer device 310 is arranged in the accommodation cavity 300 to transfer the wafer, for example, to transfer the wafer from the removing unit to the baking unit 320, or from the baking unit 320 to the developing unit 330, or from the developing unit 330 to the drying unit 340. In some specific embodiments, the wafer transfer device 310 is a robot. In some more specific embodiments, the removing unit, the baking unit 320, the developing unit 330 and the drying unit 340 are arranged in sequence in the form of a ring in the accommodation cavity 300, and the wafer transfer device 310 is arranged in the middle of the ring-shaped area formed by the removing unit, the baking unit 320, the developing unit 330 and the drying unit 340, so as to facilitate the wafer to be quickly transferred.

[0087] In some embodiments, the baking unit 320 comprises a second housing 321 and a heating plate 322, the heating plate 322 is rotatably arranged in the second housing 321 to heat the wafer; wherein the wafer transfer device 310 drives the wafer in the removing unit to be transferred to the heating plate 322 to be baked.

[0088] In some embodiments, in the removing device, the wafer is first transferred to the removing unit by the wafer transfer device 310 to be exposed, wherein the exposure energy is 0-100 mj, the exposure time is 0-60 s, and the rotation speed of the first carrier 110 is 0-500 rpm.

[0089] After the exposure, the wafer is transferred by the wafer transfer device 310 to the baking unit 320 for baking, wherein the baking unit 320 comprises a second housing 321 and a heating plate 322, the sidewall of the second housing 321 is provided with an opening, so that the wafer transfer device 310 can transfer the wafer into the second housing 321 from the opening, and the heating plate 322 is used to support and heat the wafer, the heating plate 322 can rotate in the second housing 321, and the rotation mode is the prior art, for example, driven by a motor, which will not be described here. The heating mode of the heating plate 322 is also the prior art, for example, the heating plate 322 is provided with a resistance wire inside for heating, and the heating mode of the heating plate 322 will not be described here. In some embodiments, in the baking unit 320, the baking temperature is 50-150°C, and the baking time is 0-180s. Under this baking temperature and time, the photoresist layer will soften, which helps the subsequent removal step, and at the same time can ensure that the wafer surface is uniformly heated, reduces the removal non-uniformity caused by temperature gradient; in addition, it can also reduce the stress between the wafer and the photoresist layer, avoid the removal non-uniformity or wafer damage caused by stress.

[0090] In some embodiments, the developing unit 330 comprises a third housing 331;

[0091] The second carrier 332 is rotatably arranged in the third housing 331 to carry the wafer;

[0092] The first spray head 333 is arranged in the third housing 331 to spray the developing solution;

[0093] The second spray head 334 is arranged in the third housing 331 to spray the cleaning solution;

[0094] Wherein, the wafer transfer device 310 drives the wafer in the baking unit 320 to be transferred to the second carrier 332, the first spray head 333 sprays the developing solution to the wafer to develop, and after the developing is finished, the second spray head 334 sprays the cleaning solution to clean.

[0095] In some embodiments, the second carrier 332 is rotatably arranged in the middle of the third housing 331, and the rotation manner is known in the art and will not be described here. The first shower head 333 and the second shower head 334 are both fixedly arranged on the side wall of the third housing 331. More specifically, the first shower head 333 is arranged above the wafer, and the second shower head 334 is arranged below the wafer. In use, the wafer transfer device 310 drives the wafer in the baking unit 320 to be transferred to the second carrier 332, the first shower head 333 sprays the developing solution towards the wafer, the developing solution is tetramethylammonium hydroxide aqueous solution, the wafer carrier table rotates at a speed of 0-500 rpm, and the first shower head 333 scans or is stationary at a certain position as needed. After the developing is completed, the second shower head 334 sprays the cleaning solution to backwash the wafer and remove the impurities left after the developing.

[0096] In some embodiments, the drying unit 340 includes a fourth housing 341.

[0097] The third carrier 342 is rotatably arranged in the fourth housing 341.

[0098] The drying shower head 343 is arranged in the fourth housing 341 to dry the wafer.

[0099] The wafer transfer device 310 drives the wafer in the developing unit 330 to be transferred to the third carrier 342, and the drying shower head 343 sprays the drying gas to the wafer to dry the wafer.

[0100] In some embodiments, the third carrier 342 is rotatably arranged in the middle of the fourth housing 341, and the rotation manner is known in the art and will not be described here. In some embodiments, the drying shower head 343 can be provided with one or more, and in this embodiment, two drying shower heads 343 are taken as an example, and the two drying shower heads 343 are arranged at the top and bottom of the third carrier 342 to blow and dry the top and bottom of the wafer. In some specific embodiments, the drying shower head 343 is connected with an external gas supply device, and the connection manner is known in the art and will not be described here. In some specific embodiments, the drying shower head 343 can spray nitrogen to dry the wafer. In some more specific embodiments, the third carrier 342 is provided with a resistance wire to heat the wafer. More specifically, the heating temperature ranges from 25-250°C.

[0101] In some embodiments, the first carrier 110, the second carrier 332 and the third carrier 342 are all plate-shaped to facilitate the wafer carrying.

[0102] In some embodiments, since the accommodating cavity 300 has a side wall, in order to facilitate the wafer transfer into the accommodating cavity 300, a bearing port 350 is arranged on the side wall of the accommodating cavity 300, the bearing port 350 penetrates the accommodating cavity 300 along the thickness direction of the side wall of the accommodating cavity 300, and the bearing port 350 is used for passing the wafer. In some specific embodiments, the bearing port 350 can be provided with one or more, and in the embodiment, two bearing ports 350 are taken as an example, and a wafer loading box 360 for loading the wafer is arranged at the bearing port 350, so as to transport the wafer.

[0103] It is worth noting that the application process of the device is independent of the wafer production line. In the photoresist layer removal process, the wafer can be transferred into the device, and after the photoresist layer is removed, the wafer is returned to the wafer production line. That is, the wafer in the device is sequentially subjected to exposure, baking, development and drying, and then the photoresist layer is removed.

[0104] The implementation principle of the wafer surface photoresist removal unit and the removal device is that a specific wavelength of light is used to irradiate the wafer, so that the photochemical reaction of the photoacid generator in the photoresist layer on the wafer is generated, and then the photoresist layer can be completely removed through baking and development processes. The bottom anti-reflective coating (BARC), the surface silicon oxide anti-reflective coating (SOC / SiARC), and the silicon oxide coating can be reused and do not depend on etching equipment, and do not produce strong acid / strong base / organic solvent waste liquid, so they are environmentally friendly. At the same time, the process conditions are mild, and the bottom film or structure is almost not damaged.

[0105] Although the embodiments of the present application have been described in detail above, it is obvious to those skilled in the art that various modifications and changes can be made to the embodiments. However, it should be understood that such modifications and changes all belong to the scope and spirit of the present application described in the claims. Moreover, the present application described herein can have other embodiments, and can be implemented or realized in various ways.

Claims

1. A wafer surface photoresist removal unit, the wafer comprising a substrate, an anti-reflective layer disposed on the substrate, and a photoresist layer disposed on the anti-reflective layer, characterized in that, The removal unit comprises a first shell (100); A first carrier (110) is arranged in the first shell (100) and used for carrying a wafer; A light source (120) is detachably arranged in the first shell (100) and used for emitting light with a wavelength of 5-600 nm; the light is used for irradiating a photoresist layer, so that a photochemical reaction of a photoacid generator in the photoresist layer is generated, and the photoresist layer on an antireflection layer is removed as a whole.

2. The removal unit according to claim 1, characterized in that The light source (120) is one or more of a mercury-vapor lamp, a deep ultraviolet light, or an extreme ultraviolet light.

3. The removal unit of claim 1, wherein, An optical filter (130) is detachably arranged in the first shell (100) and disposed between the first carrier (110) and the light source (120) to filter the light emitted by the light source (120).

4. The removal unit of claim 1, wherein, A distance detection assembly (140) is arranged in the first shell (100) and comprises: A detection member (141) is arranged in the first carrier (110) and used for emitting and receiving signals; A reflection member (142) is arranged in the first shell (100), and a distance between the reflection member (142) and the detection member (141) is the same as a distance between the light source (120) and the first carrier (110); The signals emitted by the detection member (141) are reflected by the reflection member (142) and then received by the detection member (141) again, so as to detect the distance between the first carrier (110) and the light source (120).

5. The removal unit according to any one of claims 1 to 4, characterized in that A control assembly (150) is further arranged and comprises: A first driving member (151) is connected to the first carrier (110) and used for driving the first carrier (110) to rotate; A second driving member (152) is arranged in the first shell (100) and connected to the first driving member (151), so as to drive the first driving member (151) and the first carrier (110) to move away from or close to the light source (120).

6. A device for removing photoresist from the surface of a wafer, characterized in that, The removal unit, the baking unit (320), the developing unit (330), and the drying unit (340) are sequentially arranged in the accommodating cavity (300); The removal unit, the baking unit (320), the developing unit (330), and the drying unit (340) are sequentially arranged in the accommodating cavity (300); The wafer transfer device (310) is arranged in the accommodating cavity (300) and used for transferring a wafer to any unit.

7. The removal device of claim 6, wherein, The baking unit (320) comprises a second shell (321) and a heating plate (322); the heating plate (322) is rotatably arranged in the second shell (321) and used for heating the wafer; The wafer transfer device (310) drives the wafer in the removal unit to be transferred to the heating plate (322) to be baked.

8. The removal device of claim 6, wherein, The developing unit (330) comprises a third shell (331). A second carrier (332) is rotatably arranged in the third housing (331) to carry the wafer; A first spray head (333) is arranged in the third housing (331) to spray developing liquid; A second spray head (334) is arranged in the third housing (331) to spray cleaning liquid; The wafer transfer device (310) drives the wafer in the baking unit (320) to be transferred to the second carrier (332), the first spray head (333) sprays developing liquid to the wafer to develop, and after the development, the second spray head (334) sprays cleaning liquid to clean.

9. The removal device of claim 6, wherein, The drying unit (340) comprises a fourth housing (341); A third carrier (342) is rotatably arranged in the fourth housing (341); A drying spray head (343) is arranged in the fourth housing (341) to dry the wafer; The wafer transfer device (310) drives the wafer in the developing unit (330) to be transferred to the third carrier (342), and the drying spray head (343) sprays drying gas to the wafer to dry.

10. The removal device according to any of claims 6-9, characterized in that The sidewall of the accommodating cavity (300) is provided with a carrying port (350) penetrating through to pass the wafer.

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