SiC crystal growing furnace mounting rack

By introducing clear functional zones and a cover-opening mechanism into the SiC crystal growth furnace mounting rack, the problem of single function in the existing technology is solved, achieving efficient crystal growth and temperature control, and improving the yield and ease of operation of crystal growth.

CN223892923UActive Publication Date: 2026-02-10DONGGUAN SHUANGPING POWER TECH CO LTD
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Patent Information

Application Number
CN202520152886.5
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2025-01-21
Publication Date
2026-02-10
Estimated Expiration
2035-01-21

AI Technical Summary

Technical Problem

Existing SiC crystal growth furnace mounting racks lack clear functional zoning and expansion capabilities, failing to meet the demands for efficient crystal growth.

Method used

A SiC crystal growth furnace mounting bracket was designed with clear functional partitions, including mounting positions for the growth furnace, vacuum mechanism, and temperature detection mechanism, and equipped with a cover opening mechanism. Through the reasonable positioning of the first, second, and third cavities, the installation of each structure is ensured to be reasonable, and the structure has temperature detection and cover opening functions.

Benefits of technology

This has enabled the efficient operation of the SiC crystal growth furnace, improved the accuracy of temperature detection and the convenience of operation, and ensured the stability and yield of crystal growth.

✦ Generated by Eureka AI based on patent content.

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Abstract

The utility model belongs to the technical field of crystal growth, and particularly relates to a SiC crystal growing furnace mounting rack which comprises a rack, and the rack comprises a first cavity, a second cavity, a third cavity and a fourth cavity, the second cavity is provided with a vacuum mechanism mounting position; the third cavity is provided with a temperature detection mechanism mounting position; the second cavity is arranged below the first cavity, and the third cavity is arranged on the right side of the first cavity. According to the utility model, definite function partitions are provided, corresponding installation spaces can be provided for all the structures, and all the structures are reasonable in installation and can be well matched to work as long as the first cavity, the second cavity and the third cavity are installed through the arrangement of the positions of the first cavity, the second cavity and the third cavity.
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Description

Technical Field

[0001] This utility model belongs to the field of crystal growth technology, and specifically relates to a mounting bracket for a SiC crystal growth furnace. Background Technology

[0002] With its unique characteristics such as a large bandgap, high critical breakdown field strength, high electron mobility, and high thermal conductivity, SiC material has become an ideal material for fabricating high-temperature, high-frequency, high-power, radiation-resistant, short-wavelength light-emitting, and optoelectronic integrated devices. The unique physical properties of SiC determine its applications in important fields such as artificial satellites, rockets, radar, communications, fighter jets, interference-free electronic ignition devices, and jet engine sensors. Therefore, developed countries have invested significant human and material resources in related technological research.

[0003] The commonly used method for preparing large-diameter SiC crystals is the Physical Vapor Transport (PVT) method. The equipment used is a PVT single crystal furnace. SiC powder is placed at the bottom of a sealed graphite crucible, and a seed crystal is fixed on the top of the crucible. Graphite insulation material is placed on the outside of the crucible. The crucible is heated by medium-frequency induction heating. When the powder reaches its sublimation point, Si, C, SiC2, and Si2C molecules are generated. Driven by the axial temperature gradient, these molecules are transported from the surface of the raw material to the surface of the seed crystal, where they condense and slowly crystallize, thus achieving the purpose of crystal growth.

[0004] Traditional SiC crystals are typically mounted on a mounting rack for fixed use, but existing mounting racks only have basic mounting functions, lack clear functional partitions, and do not offer other extended functions.

[0005] For example, the prior art discloses a device for growing silicon carbide single crystals by PVT method (application number CN202322524671.5), including a frame; a furnace cavity; the furnace cavity is set on the frame; a thermal field structure; the thermal field structure is set inside the furnace cavity; a heating structure; the heating structure surrounds the outside of the furnace cavity; and an air inlet structure; the air inlet structure includes an air inlet, an air outlet, and an air inlet channel, the air inlet is set at the top of the furnace cavity, and the air inlet channel extends downward from the air inlet and passes through the thermal field structure to the bottom of the furnace cavity. This utility model is a conventional mounting frame that provides basic installation functions. Utility Model Content

[0006] To address the aforementioned issues, this paper presents a SiC crystal growth furnace mounting rack with clearly defined functional zones and a rationally designed structure.

[0007] Another objective of this invention is to provide a SiC crystal growth furnace mounting bracket with a cover opening function.

[0008] Another objective of this invention is to provide a SiC crystal growth furnace mounting bracket with a temperature detection function.

[0009] To achieve the above objectives, the technical solution of this utility model is as follows.

[0010] A SiC crystal growth furnace mounting rack, characterized in that it includes a frame, the frame comprising:

[0011] First cavity: The furnace body mounting position for the growth furnace is provided;

[0012] Second chamber: equipped with a vacuum mechanism mounting position;

[0013] The third cavity is equipped with a mounting position for a temperature detection mechanism.

[0014] The second cavity is below the first cavity, and the third cavity is to the right of the first cavity.

[0015] This utility model has clear functional partitions, which can provide corresponding installation space for each structure. Furthermore, through the positional arrangement of the first cavity, the second cavity, and the third cavity, the installation of each structure is reasonable, and they can work well together once installed.

[0016] Furthermore, the furnace body includes a shell, an insulation layer, and a crucible with a growth chamber. The insulation layer covers the outer surface of the crucible, and a receiving cavity is provided inside the shell. Both the insulation layer and the crucible are disposed within the receiving cavity. This structural design ensures the normal operation of the furnace body. The crucible serves as a container for crystal growth, the insulation layer provides basic insulation, and the shell provides overall structural strength and further enhances the insulation effect.

[0017] Furthermore, the shell includes a middle shell, an upper shell, and a lower shell. The upper and lower shells are respectively fitted onto the upper and lower sides of the middle shell, forming a receiving cavity. The insulation layer forms a lower cavity with the lower shell, and the insulation layer forms an upper cavity with the upper shell. The insulation layer is made of conventional insulation material.

[0018] Furthermore, the furnace body also includes a top temperature detector, a bottom temperature detector, and a side temperature detector. The detection ends of the top, bottom, and side temperature detectors correspond to the top, bottom, and side of the crucible, respectively. Both the shell and the insulation layer are provided with detection holes extending to the crucible surface for the top, bottom, and side temperature detectors to perform their detection. The presence of these detectors allows for real-time temperature monitoring of the crucible, thereby enabling better real-time control of the top, bottom, and side heating components. The detection holes prevent the shell and insulation layer from affecting temperature detection, further improving the accuracy of temperature readings.

[0019] Furthermore, the frame is also equipped with a lid-opening mechanism, the output end of which is fixedly connected to the upper shell to drive the upper shell to open or close. The lid-opening mechanism facilitates the opening of the upper shell, thereby facilitating the opening of the insulation layer and the crucible for loading and unloading materials.

[0020] Furthermore, the opening mechanism includes a mounting plate, a lifting cylinder, and a translating cylinder. The lifting cylinder is mounted on the mounting plate, which is fixed to the frame. The output shaft of the lifting cylinder is fixedly connected to the upper shell to open or close the upper shell. The output end of the translating cylinder is fixedly connected to the mounting plate to drive the mounting plate and the upper shell to perform translating motion. Preferably, a slider is provided on the mounting plate, and a sliding rod is provided on the frame. The slider is sleeved on the sliding rod. When the translating cylinder connects to the mounting plate and performs telescopic movement, the mounting plate can slide on the sliding rod via the slider under the drive of the translating cylinder. This structure is not only stable but also simple. The lifting cylinder can also be configured by providing a slider on the mounting plate, with the slider sleeved on the sliding rod, and connected to the upper shell via the sliding rod, thereby ensuring the smoothness of opening and closing the upper shell.

[0021] The beneficial effects of this utility model are that it has clear functional zoning, which can provide corresponding installation space for each structure, and the position setting of the first cavity, the second cavity and the third cavity makes the installation of each structure reasonable, so that they can work well together once installed. Attached Figure Description

[0022] Figure 1 This is a schematic diagram of the first angle structure of a multi-temperature zone SiC crystal growth furnace.

[0023] Figure 2 This is a schematic diagram of the second angle structure of a multi-temperature zone SiC crystal growth furnace.

[0024] Figure 3 This is a schematic diagram of the third-angle structure of a multi-temperature zone SiC crystal growth furnace.

[0025] Figure 4 yes Figure 3 A schematic diagram of the cross-sectional structure of AA.

[0026] Figure 5 yes Figure 4 A magnified view of a portion of point A in the middle.

[0027] Figure 6 yes Figure 4 A magnified view of a section at point B in the middle.

[0028] Figure 7 This is a schematic diagram of the three-dimensional cross-sectional structure of a multi-temperature zone SiC crystal growth furnace.

[0029] Figure 8 yes Figure 7 A magnified view of a section at point C.

[0030] Figure 9 This is a schematic diagram of the opening mechanism.

[0031] Figure 10 It is a structural diagram of the housing, power supply, heating coil and electromagnet.

[0032] Figure 11 This is a schematic diagram of the blocking device.

[0033] 1. Furnace body; 10. Growth chamber; 11. Shell; 12. Insulation layer; 13. Crucible; 110. Receiving cavity; 111. Middle shell; 112. Upper shell; 113. Lower shell; 1101. Lower cavity; 1102. Upper cavity;

[0034] 2. Top heating element;

[0035] 3. Bottom heating element;

[0036] 4. Side heating assembly;

[0037] 5. Heating coil;

[0038] 6. Power supply;

[0039] 7. Top temperature sensor;

[0040] 8. Bottom temperature sensor;

[0041] 9. Side temperature sensor;

[0042] 101. Detection hole;

[0043] 102. Vacuum mechanism;

[0044] 103. Frame; 1031. First cavity; 1032. Second cavity; 1033. Third cavity;

[0045] 104. Mounting plate;

[0046] 105. Opening mechanism; 1051. Mounting block; 1052. Lifting cylinder; 1053. Translation cylinder;

[0047] 106. Slider;

[0048] 107. Sliding rod;

[0049] 108. Blocking device; 1081. Fixing rod; 1082. Fixing block; 1083. Blocking plate; 1084. Trigger plate; 1085. Electromagnet. Detailed Implementation

[0050] To make the objectives, technical solutions, and advantages of this utility model clearer, the present utility model will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present utility model and are not intended to limit the present utility model.

[0051] See Figure 1-3 This embodiment provides a multi-temperature zone SiC crystal growth furnace, characterized in that it includes:

[0052] The furnace body 1 has a growth chamber 10 for crystal growth inside;

[0053] Top heating assembly 2 is used to heat the top of furnace body 1;

[0054] Bottom heating component 3 is used to heat the bottom of furnace body 1;

[0055] Side heating assembly 4 is used to heat the side of furnace body 1;

[0056] The top heating component 2, the bottom heating component 3, and the side heating component 4 are respectively installed on the top, bottom, and side surfaces of the furnace body 1.

[0057] In this invention, by setting a top heating component 2, a bottom heating component 3, and a side heating component 4 on the top, bottom, and side surfaces of the furnace body 1 respectively, the furnace body 1 can be heated evenly around its perimeter. This prevents the temperature distribution from being too uneven due to the size of the furnace body 1, which would affect the yield of the crystal growth furnace. This invention can effectively ensure a high yield of the crystal growth furnace and good product consistency.

[0058] In this embodiment, the furnace body 1 includes a shell 11, an insulation layer 12, and a crucible 13 with a growth chamber 10. The insulation layer 12 covers the outer surface of the crucible 13. A receiving cavity 110 is provided inside the shell 11. The insulation layer 12 and the crucible 13 are both disposed within the receiving cavity 110. A top heating assembly 2 and a bottom heating assembly 3 are both disposed within the receiving cavity 110, corresponding to the top and bottom of the crucible 13, respectively. Side heating assemblies 4 are arranged around the sides of the shell 11. This structure ensures the normal operation of the furnace body 1. The crucible 13 serves as a container for crystal growth. The insulation layer 12 provides basic insulation, and the shell 11 provides overall structural strength and further enhances insulation. The placement of the top heating assembly 2 and the bottom heating assembly 3 within the receiving cavity 110 effectively reduces overall heat loss and shortens the induction heating distance, thus improving the heating effect.

[0059] In this embodiment, the shell 11 includes a middle shell 111, an upper shell 112, and a lower shell 113. The upper shell 112 and the lower shell 113 cover the upper and lower sides of the middle shell 111, respectively, forming a receiving cavity 110. A lower cavity 1101 is formed between the insulation layer 12 and the lower shell 113, and an upper cavity 1102 is formed between the insulation layer 12 and the upper shell 112. The top heating component 2 is located in the upper cavity 1102, and the bottom heating component 3 is located in the lower cavity 1101. The insulation layer 12 is a conventional insulation material. The upper cavity 1102 and the lower cavity 1101 can better achieve the heating of the top heating component 2 and the bottom heating component 3, and can also work with the vacuum pump to better achieve the vacuum effect inside the crucible 13. That is, after the crucible 13 forms a vacuum environment, it is equivalent to the existence of multiple cavities outside the crucible 13 to improve the airtightness.

[0060] In this embodiment, the top heating assembly 2, the bottom heating assembly 3, and the side heating assembly 4 all include induction heating coils 5. The furnace body also includes a power supply 6, which is electrically connected to the induction heating coils 5. The induction heating coil 5 is a preferred heating method of this invention; it only needs to be connected to a power supply to generate an induced magnetic field, causing the crucible to heat up. The power supply 6 is preferably a capacitor.

[0061] In this embodiment, the side heating assembly 4 includes multiple sets of induction heating coils 5, which are evenly wound around the outer shell 11 from top to bottom. Each set of induction heating coils 5 is connected to a power supply 6. The side heating assembly 4 includes multiple sets of induction heating coils 5, each set of induction heating coils 5 is independent of each other, which can realize multi-temperature zone control of the furnace body from top to bottom. That is, by controlling the power of the induction heating coils 5 in different areas, different temperatures can be achieved at different locations.

[0062] In this embodiment, the furnace body also includes a top temperature detector 7, a bottom temperature detector 8, and a side temperature detector 9. The detection ends of the top, bottom, and side temperature detectors 7 and 8 correspond to the top, bottom, and side of the crucible 13, respectively. Both the shell 11 and the insulation layer 12 are provided with detection holes 101 extending to the surface of the crucible 13 for detection by the top, bottom, and side temperature detectors 7 and 8. The placement of the top, bottom, and side temperature detectors 7 and 8 allows for real-time detection of the temperature of the crucible 13, thereby enabling better real-time control of the top heating assembly 7, bottom heating assembly 8, and side heating assembly 9. The detection holes 101 prevent the shell 11 and insulation layer 12 from affecting temperature detection, further improving the accuracy of temperature detection.

[0063] In this embodiment, the furnace body also includes a vacuum mechanism 102, which is connected to the growth chamber 10 of the crucible 13 to evacuate or break the vacuum in the growth chamber 10. The vacuum mechanism 102 can provide an ideal crystal growth environment for the growth chamber 10, which is more conducive to ensuring the quality of crystal growth. The vacuum mechanism 102 is a conventional combination of a vacuum pump and a vacuum pipeline, with the vacuum pump connected to the growth chamber 10 of the crucible 13 via a vacuum pipeline.

[0064] In this embodiment, the furnace body also includes a frame 103, which includes a first cavity 1031, a second cavity 1032, and a third cavity 1033. The second cavity 1032 is below the first cavity 1031, and the third cavity 1033 is to the right of the first cavity 1031. A housing 11 is installed inside the first cavity 1031, with its top surface protruding from the top of the frame 103. A vacuum mechanism 102 is installed inside the second cavity 1032, and a mounting plate 104 is provided inside the third cavity 1033. The mounting plate 104 has mounting positions for mounting a side temperature detector 9. The frame 103 provides a stable installation space for each structure, and the positions of the first cavity 1031, second cavity 1032, and third cavity 1033 ensure that each structure is installed reasonably and can work well together once installed.

[0065] In this embodiment, the furnace body also includes a lid opening mechanism 105. The output end of the lid opening mechanism 105 is fixedly connected to the upper shell 112 to drive the upper shell 112 to open or close. The lid opening mechanism 105 facilitates the opening of the upper shell 112, thereby facilitating the opening of the insulation layer 12 and the crucible 13 for taking out and putting in materials.

[0066] In this embodiment, the opening mechanism 105 includes a mounting block 1051, a lifting cylinder 1052, and a translation cylinder 1053. The lifting cylinder 1052 is mounted on the mounting block 1051, which is fixed to the frame 103. The output shaft of the lifting cylinder 1052 is fixedly connected to the upper shell 112 to open or close the upper shell 112. The output end of the translation cylinder 1053 is fixedly connected to the mounting block 1051 to drive the mounting block 1051 and the upper shell 112 to perform translational movements. Preferably, a slider 106 is provided on the mounting block 1051, and a sliding rod 107 is also provided on the frame 103. The slider 106 is sleeved on the sliding rod 107. When the translation cylinder 1053 connects to the mounting block 1051 and performs telescopic movements, the mounting block 1051 can slide on the sliding rod 107 via the slider 106 under the drive of the translation cylinder 1053. This structure is not only stable but also simple. The lifting cylinder 1052 can also be equipped with a slider 106 on the mounting block 1051. The slider 106 is sleeved on the slide rod 107 and connected to the upper shell 112 through the slide rod 107, thereby ensuring the smooth opening and closing of the upper shell 112.

[0067] In this embodiment, the furnace body also includes a blocking device 108 for blocking or opening the detection hole 101. The blocking device 108 can be configured to either block the detection hole 101, preventing the temperature detector 9 from detecting the temperature inside the furnace, or open the detection hole 101, allowing the temperature detector 9 to detect the temperature inside the furnace. The blocking device 108 is primarily designed to overcome a problem discovered during long-term testing: when the detection hole 101 is continuously connected to the outside, the temperature detector 9 may detect inaccurate temperatures inside the furnace. By closing the detection hole 101 when the temperature detector 9 is not detecting, and then opening it again for the few seconds required for detection, this periodic detection significantly improves the accuracy of the temperature detector 9.

[0068] In this embodiment, the blocking device 108 includes a fixed rod 1081, a fixed block 1082, a blocking plate 1083, a trigger plate 1084, and an electromagnet 1085 that attracts or repels the trigger plate. The fixed block 1082 is fixedly connected to the inner side of the housing 11, and the fixed rod 1081 is rotatably connected to the fixed block 1082. The blocking plate 1083 and the trigger plate 1084 are both fixedly connected to the fixed rod 1081, and the blocking plate 1083 corresponds to the position of the detection hole 101 to close or open the detection hole 101. The electromagnet 1085 is disposed on the outer side of the housing 11, and the position of the electromagnet 1085 corresponds to that of the trigger plate 1084. In actual operation, by energizing one electromagnet 1085 or by energizing multiple electromagnets 1085 in turn, the trigger plate 1084 can be repelled and attracted. Thus, the trigger plate 1084 drives the fixed rod 1081 to rotate on the fixed block 1082, and the blocking plate 1083 rotates with the fixed rod 1081, so that the blocking plate 1083 blocks the detection hole 101 or does not block the detection hole 101.

[0069] The above are merely preferred embodiments of the present utility model and are not intended to limit the present utility model. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present utility model should be included within the protection scope of the present utility model.

Claims

1. A mounting bracket for a SiC crystal growth furnace, characterized in that, Includes a rack, the rack comprising: First cavity: The furnace body mounting position for the growth furnace is provided; Second chamber: equipped with a vacuum mechanism mounting position; The third cavity is equipped with a mounting position for a temperature detection mechanism. The second cavity is below the first cavity, and the third cavity is to the right of the first cavity.

2. The SiC crystal growth furnace mounting bracket according to claim 1, characterized in that, The furnace body includes a shell, an insulation layer, and a crucible with a growth chamber. The insulation layer covers the outer surface of the crucible, and a receiving cavity is provided inside the shell. Both the insulation layer and the crucible are located inside the receiving cavity.

3. The SiC crystal growth furnace mounting bracket according to claim 2, characterized in that, The shell includes a middle shell, an upper shell, and a lower shell. The upper shell and the lower shell cover the upper and lower sides of the middle shell respectively, and the three together form a cavity. The insulation layer and the lower shell form a lower cavity, and the insulation layer and the upper shell form an upper cavity.

4. A SiC crystal growth furnace mounting bracket according to claim 2, characterized in that, The furnace body also includes a top temperature detector, a bottom temperature detector, and a side temperature detector. The detection ends of the top temperature detector, the bottom temperature detector, and the side temperature detector correspond to the top, bottom, and side of the crucible, respectively. The shell and the insulation layer are provided with detection holes extending to the surface of the crucible for detection by the top temperature detector, the bottom temperature detector, and the side temperature detector.

5. A SiC crystal growth furnace mounting bracket according to claim 3, characterized in that, The frame is also equipped with a cover opening mechanism, the output end of which is fixedly connected to the upper shell to drive the upper shell to open or close.

6. A SiC crystal growth furnace mounting bracket according to claim 5, characterized in that, The opening mechanism includes a mounting plate, a lifting cylinder, and a translating cylinder. The lifting cylinder is mounted on the mounting plate, which is fixed to the frame. The output shaft of the lifting cylinder is fixedly connected to the upper shell to drive the upper shell to open or close. The output end of the translating cylinder is fixedly connected to the mounting plate to drive the mounting plate and the upper shell to perform translational movements.

Citation Information

Patent Citations

  • Equipment for growing silicon carbide single crystals by PVT (physical vapor transport) method

    CN221254781U