Tapered grating etching system with gradient groove depth

Abstract

The utility model provides a gradient groove depth inclined grating etching system. The gradient groove depth inclined grating etching system comprises a base station, a first etching baffle plate and ion source equipment, the base station is connected with a moving assembly in the ion beam etching chamber, and the side surface of the base station is connected with the bottom surface of a substrate to be etched through an inclined plane structure body; the first etching baffle is fixed in the ion beam etching chamber, a first trepanning area is arranged in the first etching baffle, and the trepanning lengths of the first trepanning area in different areas in the direction in which the moving assembly drives the base station to move are different; the ion source equipment is fixedly arranged in the ion beam etching chamber and used for emitting an ion beam, and the emitting direction of the ion beam is perpendicular to the plane where the side face of the base station is located; according to the etching system for the gradient groove depth inclined grating, the gradient groove depth inclined grating can be prepared, and when the gradient groove depth inclined grating is used as a coupling-out grating of a grating waveguide, a grating waveguide display image obtains better color uniformity.

Description

Technical Field

[0001] This invention belongs to the field of grating fabrication technology, specifically relating to a gradient groove depth tilted grating etching system. Background Technology

[0002] Augmented Reality (AR) technology refers to providing users with additional information in the real world through certain technical means (i.e., "enhancement"). This technology organically integrates images from the virtual world with scenes from the real world, providing users with richer information and an immersive experience by deeply integrating the calculated information with the real world.

[0003] Augmented reality technology can be implemented through many hardware platforms, among which the most immersive is wearable augmented reality devices, namely AR glasses. The hardware form of this method is a simple pair of glasses. Light is guided into the human eye through the microstructure on the surface of the AR glasses lenses. This hardware implementation method is the most convenient and efficient, and is the mainstream technology of AR.

[0004] Grating waveguide technology is a mainstream solution for AR glasses lenses. A grating waveguide consists of a waveguide substrate, a coupling grating, and a coupling grating. The coupling grating and coupling grating are mounted on the waveguide substrate. Its basic principle is as follows: Figure 1 As shown, the light output from the optomechanical system 1 (imaging device) is coupled into the waveguide substrate 2 by the coupling grating 3. It propagates in the waveguide substrate 2 by total internal reflection. Whenever it encounters the coupling grating 4, a portion of the light is coupled out. The coupled-out light (the solid line in the direction of the human eye in the figure) enters the human eye, so that the same image as the output of the optomechanical system 1 can be seen. At the same time, the human eye can see the real world scene (the dashed line in the direction of the human eye in the figure). The superposition of the two parts can realize the function of augmented reality.

[0005] Tilted gratings can couple light into a grating waveguide with high diffraction efficiency. When used as a coupling grating in a grating waveguide, the amount of light leaking out of the grating waveguide can be reduced by adjusting the energy ratio of the transmission and reflection orders of the tilted grating. However, when used as a coupling grating in a grating waveguide, it is difficult to achieve good color uniformity in the grating waveguide display image. Utility Model Content

[0006] In order to overcome the shortcomings of the prior art, this utility model provides a gradient groove depth tilting grating etching system.

[0007] This utility model is achieved through the following technical solution:

[0008] This utility model provides a gradient groove deep tilting grating etching system, including a base, a first etching baffle and an ion source device;

[0009] The base is connected to the moving component within the ion beam etching chamber;

[0010] The side of the base is provided with a sloping structure that connects to the bottom surface of the substrate to be etched;

[0011] The first etching baffle is fixed in the ion beam etching chamber. A first opening area is provided in the first etching baffle. The opening length of the first opening area is different in different areas of the moving component driving the base to move.

[0012] The ion source device is fixedly installed in the ion beam etching chamber and is used to emit an ion beam. The emission direction of the ion beam is perpendicular to the plane on the side of the base.

[0013] As the moving component moves the base station within the ion beam etching chamber, the ion beam emitted by the ion source device passes through the first opening area of ​​the first etching baffle to perform ion beam etching on the top surface of the substrate to be etched, which is connected to the moving base station.

[0014] Furthermore, the inclined structure includes a connector;

[0015] The first side of the adapter is arranged parallel to the side of the base, the first side of the adapter is connected to the side of the base, the second side of the adapter is used to connect to the bottom surface of the substrate to be etched, and the second side of the adapter has an angle relative to the first side.

[0016] As the moving component moves the base station within the ion beam etching chamber, the ion beam emitted by the ion source device passes through the first opening area of ​​the first etching baffle to perform ion beam etching on the top surface of the substrate to be etched, which is connected to the moving base station via an adapter.

[0017] Furthermore, the inclined structure also includes connectors;

[0018] The top of the first side of the adapter is connected to the side of the base.

[0019] A threaded hole is formed at the middle position of the first side of the adapter along the direction extending to the second side. One end of the connector is threadedly connected to the threaded hole, and the other end of the connector is connected to the side of the base.

[0020] Furthermore, it also includes a second etching baffle;

[0021] The bottom edge of the second etching baffle is connected to the top edge of the substrate to be etched, and the top surface of the second etching baffle is not in contact with the first etching baffle.

[0022] The second etching baffle is provided with a second opening area, and the opening position of the second opening area corresponds to the set position of the grating etching area on the top surface of the substrate to be etched.

[0023] Furthermore, the opening size of the second opening area corresponds to the set size of the grating etching area on the top surface of the substrate to be etched, and the opening shape of the second opening area corresponds to the set shape of the grating etching area on the top surface of the substrate to be etched.

[0024] Furthermore, the bottom edge of the second etching baffle is adhesively connected to the top edge of the substrate to be etched.

[0025] Furthermore, in the direction perpendicular to the direction in which the moving component drives the base to move, the size of the first opening area is not smaller than the size of the second opening area.

[0026] Furthermore, the first etching baffle is fixedly connected to the ion beam etching chamber by a fastener.

[0027] Compared with the prior art, the technical solution of this utility model has the following beneficial effects:

[0028] This invention provides a gradient groove depth tilting grating etching system, including a base, a first etching baffle, and an ion source device. The base is connected to a moving component within an ion beam etching chamber. A sloping structure is provided on the side of the base, connecting to the bottom surface of the substrate to be etched. The first etching baffle is fixed within the ion beam etching chamber, and a first opening area is provided within the first etching baffle. The opening length varies in different areas of the first opening area along the direction in which the moving component drives the base. The ion source device is fixedly installed within the ion beam etching chamber and is used to emit an ion beam. The emission direction of the ion beam is perpendicular to the plane containing the side of the base. During the movement of the base within the ion beam etching chamber by the moving component, the ion beam emitted by the ion source device passes through the first opening area of ​​the first etching baffle and performs ion beam etching on the top surface of the substrate connected to the moving base. The gradient groove depth tilted grating etching system provided by this invention features a sloping structure on the side of the substrate connected to the bottom surface of the substrate to be etched. The ion beam emission direction is perpendicular to the plane containing the side of the substrate, allowing the top surface of the substrate to be etched to obtain a tilted grating through ion beam etching. Furthermore, because the opening lengths of the first opening area within the first etching baffle differ in different regions along the direction of movement of the substrate driven by the moving component, the ion beam etching time varies at different positions on the top surface of the substrate during the process of the moving component driving the substrate within the ion beam etching chamber and etching the top surface of the substrate through the first opening area of ​​the first etching baffle. This results in different ion beam etching times at different positions within the etched area, leading to different grating groove depths and thus a gradient groove depth tilted grating. Since the tilted grating's diffraction efficiency is controlled by the gradient groove depth, when used as the coupling grating of a grating waveguide, the grating waveguide display image exhibits good color uniformity. Attached Figure Description

[0029] To more clearly illustrate the technical solutions in the embodiments of this utility model or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0030] Figure 1 A schematic diagram illustrating the basic principle of the grating waveguide scheme;

[0031] Figure 2 A schematic diagram of a first example structure of the gradient groove depth tilting grating etching system provided by this utility model;

[0032] Figure 3 A perspective view of the first etched baffle as an example;

[0033] Figure 4This is a schematic diagram of tilted grating etching on the substrate to be etched;

[0034] Figure 5 A schematic diagram showing the connection between the second example structure of the gradient groove deep tilting grating etching system provided by this utility model and the substrate to be etched.

[0035] Figure 6 A perspective view of the second etched baffle as an example.

[0036] Among them, 1-optical mechanism, 2-waveguide substrate, 3-coupled grating, 4-coupled grating, 5-base, 6-first etching baffle, 7-ion source equipment, 8-fixing component, 9-first opening area, 10-adapter, 11-second etching baffle, 12-substrate to be etched, 13-second opening area. Detailed Implementation

[0037] The technical solution of this utility model will be clearly and completely described below with reference to its embodiments. Obviously, the described embodiments are only some embodiments of this utility model, and not all embodiments. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the protection scope of this utility model.

[0038] In this document, the terms "first," "second," and other similar words are not intended to imply any order, quantity, or importance, but are merely used to distinguish different elements. The terms "one," "a," and other similar words are not intended to indicate the existence of only one of the stated things, but rather that the description refers only to one of the stated things, which may have one or more. The terms "comprising," "including," and other similar words are intended to indicate a logical relationship, not a spatial relationship. For example, "A includes B" means that logically B belongs to A, not that spatially B is located inside A. Furthermore, the meanings of the terms "comprising," "including," and other similar words should be considered open-ended, not closed. For example, "A includes B" means that B belongs to A, but B does not necessarily constitute all of A; A may also include other elements such as C, D, and E.

[0039] In this document, the terms "embodiment," "this embodiment," "preferred embodiment," and "one embodiment" do not imply that the description applies only to one specific embodiment, but rather that such description may also be applicable to one or more other embodiments. Those skilled in the art will understand that any description made herein relating to one embodiment can be substituted, combined, or otherwise incorporated with the descriptions in one or more other embodiments. Such substitutions, combinations, or other incorporations resulting in new embodiments are readily conceived by those skilled in the art and fall within the protection scope of this utility model.

[0040] In the context of this article, “multiple” means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0041] To address the problem that it is difficult to achieve good color uniformity in grating waveguide display images when tilted gratings are used as coupling gratings in grating waveguides, this invention provides a gradient groove depth tilted grating etching system to solve this problem.

[0042] like Figure 2 As shown, the gradient groove deep tilting grating etching system provided by this utility model includes a base 5, a first etching baffle 6, and an ion source device 7.

[0043] The base 5 is connected to a movable component within the ion beam etching chamber. For example, the movable component may consist of a slide rail and a slider. The slide rail is fixedly connected to the bottom end of the ion beam etching chamber, one end of the slider is connected to the slide rail, and the other end of the slider is connected to the base. The slider on the slide rail can move the base horizontally within the ion beam etching chamber, and can also move the base vertically within the ion beam etching chamber.

[0044] The side of the base 5 is provided with a sloping structure that connects to the bottom surface of the substrate to be etched.

[0045] The first etching baffle 6 is fixed inside the ion beam etching chamber. For example, the first etching baffle 6 can be connected to the fixing member 8, and then the fixing member 8 can be connected to the top of the ion beam etching chamber. An example of the fixing member is a fixing rod.

[0046] The first etching baffle 6 has a first opening area, and the opening length of the first opening area is different in different areas along the direction in which the moving component drives the base to move. For example, Figure 3 As shown, the opening shape of the first aperture area 9 in the first etching baffle 6 is a right trapezoid. When the moving component drives the stage to move in the ion beam etching chamber along the horizontal direction of the chamber, the ion beam etching time of the substrate to be etched is different at different positions in the etched area, resulting in different grating groove depths.

[0047] The ion source device 7 is fixedly installed in the ion beam etching chamber and is used to emit an ion beam. The emission direction of the ion beam is perpendicular to the plane of the aforementioned side of the base 5.

[0048] During the movement of the moving component and the stage within the ion beam etching chamber, the ion beam emitted by the ion source device passes through the first opening area of ​​the first etching baffle to perform ion beam etching on the top surface of the substrate to be etched, which is connected to the moving stage.

[0049] There are no specific limitations on the construction of the aforementioned base; for example, a cube, cuboid, etc., can be used.

[0050] There are no specific requirements for the shape of the first etching baffle. For example, a square plate or a rectangular plate can be used. There are no specific requirements for the opening shape of the first opening area within the first etching baffle, as long as the opening length of different areas of the first opening area in the direction in which the moving component drives the base to move is different. The first opening area can be, for example, trapezoidal, triangular, circular, elliptical or other polygonal shapes.

[0051] The aforementioned ion source equipment can be obtained using existing equipment.

[0052] The aforementioned ion beam etching chamber can be implemented within an ion beam etching machine.

[0053] The gradient groove depth tilted grating etching system of this invention, because the side of the base is provided with a sloping structure connected to the bottom surface of the substrate to be etched, and the emission direction of the ion beam is perpendicular to the plane of the side of the base, can obtain a tilted grating by ion beam etching the top surface of the substrate. Furthermore, because the opening lengths of the first opening area within the first etching baffle are different in different regions along the direction of movement of the base driven by the moving component, during the process of the moving component driving the base to move within the ion beam etching chamber and ion beam etching the top surface of the substrate through the first opening area of ​​the first etching baffle, the ion beam etching time at different positions on the top surface of the substrate to be etched is different, resulting in different grating groove depths, thus obtaining a gradient groove depth tilted grating. The tilted grating controls the grating diffraction efficiency through the gradient groove depth; therefore, when the gradient groove depth tilted grating is used as the coupling grating of a grating waveguide, the grating waveguide display image achieves better color uniformity.

[0054] For example, the aforementioned inclined structure includes an adapter 10.

[0055] The first side of the adapter 10 is arranged parallel to the aforementioned side of the base 5, and the first side of the adapter 10 is connected to the aforementioned side of the base 5. The second side of the adapter 10 is used to connect to the bottom surface of the substrate to be etched, and the second side of the adapter has an angle relative to the first side.

[0056] During the movement of the moving component and the stage within the ion beam etching chamber, the ion beam emitted by the ion source device passes through the first opening area of ​​the first etching baffle to perform ion beam etching on the top surface of the substrate to be etched, which is connected to the moving stage via an adapter.

[0057] For etching operations involving tilted gratings with different tilt angles on a substrate, the tilt angle of the second side of the adapter relative to the first side can be adjusted by replacing the adapter (e.g., ...). Figure 4 The angle α shown is used to adjust the angle between the substrate to be etched and the ion beam emitted from the ion source, thereby obtaining tilted gratings with different tilt angles on the substrate to be etched.

[0058] The structure of the adapter is not specifically limited, but it is necessary to ensure that the first side of the adapter connected to the side of the base is parallel to the side of the base, and that the second side of the adapter used to connect the substrate to be etched has an angle with the first side. For example, the adapter can be a triangular prism, a triangular pyramid, etc.

[0059] For example, the bottom surface of the substrate to be etched and the second side surface of the adapter 10 can be connected by an adhesive, such as glue.

[0060] If the inclined structure uses only one adapter, as mentioned above, it is necessary to replace the adapter to obtain inclined gratings with different tilt angles on the substrate to be etched, which increases etching cost and reduces etching efficiency. Therefore, as a preferred embodiment, in the gradient groove depth inclined grating etching system provided by this utility model, the inclined structure may further include a connector (not shown in the figure).

[0061] The top of the first side of the adapter 10 is connected to the aforementioned side of the base 5.

[0062] A threaded hole is provided at the middle position of the first side of the adapter 10 along the direction extending to the second side. One end of the connector is threadedly connected to the threaded hole, and the other end of the connector is connected to the aforementioned side of the base.

[0063] Based on the etching operation of tilted gratings with different tilt angles required on the substrate to be etched, the tilt angle of the second side of the adapter relative to the first side can be adjusted by adjusting the connection depth between one end of the connector and the threaded hole. This, in turn, adjusts the angle between the substrate to be etched and the ion beam emitted from the ion source, thereby obtaining tilted gratings with different tilt angles on the substrate to be etched. This method eliminates the need to replace the adapter, reduces etching costs, and improves etching efficiency.

[0064] For example, the connector may be a connecting rod with threads on its exterior.

[0065] During the process of ion beam emission from the ion source device passing through the first opening area of ​​the first etching baffle to perform ion beam etching on the top surface of the substrate to be etched connected to the moving base, in order to ensure that the ion beam etches the grating set position within the top surface of the substrate to be etched, and also to ensure that the grating size and morphology etched on the top surface of the substrate to be etched match the grating set size and morphology, as a preferred embodiment, the above-mentioned gradient groove depth tilting grating etching system of this utility model further includes a second etching baffle.

[0066] The bottom edge of the second etching baffle 11 is connected to the top edge of the substrate 12 to be etched (e.g., Figure 5 As shown, for example, the bottom edge of the second etching baffle is adhesively connected to the top edge of the substrate to be etched, such as with glue. The top surface of the second etching baffle 11 does not contact the first etching baffle 6, that is, there is an air gap between the top surface of the second etching baffle 11 and the first etching baffle 6.

[0067] The second etching baffle 11 has a second opening area. The opening position of the second opening area corresponds to the set position of the grating etching area on the top surface of the substrate to be etched. The opening size of the second opening area corresponds to the set size of the grating etching area on the top surface of the substrate to be etched. The opening shape of the second opening area corresponds to the set shape of the grating etching area on the top surface of the substrate to be etched.

[0068] The shape of the second etching baffle is not specifically limited; for example, a square or rectangular substrate can be used. The opening shape of the second aperture area within the second etching baffle is determined by the set shape of the grating etching area within the substrate to be etched, such as a rectangle, parallelogram, triangle, circle, ellipse, or other polygons. Figure 6 As shown, the opening shape of the second opening region 13 within the second etching baffle 11 is rectangular.

[0069] During the process of ion beam emission from the ion source device sequentially passing through the first opening area of ​​the first etching baffle and the second opening area of ​​the second etching baffle to etch the top surface of the substrate to be etched connected to the moving base, in order to ensure that the ion beam etches the grating setting area within the top surface of the substrate to be etched, in a preferred embodiment, in the direction perpendicular to the direction in which the moving component drives the base to move, the size of the first opening area in the first etching baffle is not less than the size of the second opening area in the second etching baffle.

[0070] The above embodiments are only used to illustrate the technical solution of this utility model and are not intended to limit it. Although the utility model has been described in detail with reference to the above embodiments, those skilled in the art can still make modifications or equivalent substitutions to the specific implementation of this utility model. Any modifications or equivalent substitutions that do not depart from the spirit and scope of this utility model are within the protection scope of the claims of this utility model pending approval.

Claims

1. A graded depth-of-trench inclined grating etching system, characterized in that, The base, the first etching baffle and the ion source device are included. The base is connected with a moving assembly in the ion beam etching chamber. The side of the base is provided with a slope structure connected with the bottom of the substrate to be etched. The first etching baffle is fixed in the ion beam etching chamber, and the first etching baffle is provided with a first opening area, and the opening length of the first opening area is different in different areas in the moving direction of the moving assembly. The ion source device is fixedly arranged in the ion beam etching chamber and used for emitting an ion beam, and the emission direction of the ion beam is perpendicular to the plane of the side of the base. During the movement of the base driven by the moving assembly in the ion beam etching chamber, the ion beam emitted by the ion source device passes through the first opening area of the first etching baffle to perform ion beam etching on the top surface of the substrate to be etched connected with the moving base.

2. The graded-depth inclined grating etching system of claim 1, wherein, The slope structure includes an adapter. The first side of the adapter is arranged in parallel with the side of the base, the first side of the adapter is connected with the side of the base, and the second side of the adapter is used for connecting the bottom of the substrate to be etched, and the second side of the adapter has an inclination angle compared with the first side. During the movement of the base driven by the moving assembly in the ion beam etching chamber, the ion beam emitted by the ion source device passes through the first opening area of the first etching baffle to perform ion beam etching on the top surface of the substrate to be etched connected with the moving base through the adapter.

3. The graded-depth inclined grating etching system of claim 2, wherein, The slope structure further includes a connecting piece. The top end of the first side of the adapter is connected with the side of the base. A threaded hole is arranged at the middle position of the first side of the adapter in the direction extending to the second side, one end of the connecting piece is threadedly connected with the threaded hole, and the other end of the connecting piece is connected with the side of the base.

4. The graded-depth inclined grating etching system of claim 1, wherein, Further including a second etching baffle. The edge position of the bottom of the second etching baffle is connected with the edge position of the top of the substrate to be etched, and the top of the second etching baffle is not in contact with the first etching baffle. The second etching baffle is provided with a second opening area, and the opening position of the second opening area corresponds to the set position of the grating etching area in the top of the substrate to be etched.

5. The graded-depth inclined grating etching system of claim 4, wherein, The opening size of the second opening area corresponds to the set size of the grating etching area in the top of the substrate to be etched, and the opening shape of the second opening area corresponds to the set shape of the grating etching area in the top of the substrate to be etched.

6. The graded-depth inclined grating etching system of claim 4, wherein, The edge position of the bottom of the second etching baffle and the edge position of the top of the substrate to be etched are connected by viscosity.

7. The graded-depth inclined grating etching system of claim 4, wherein, In the vertical direction of the moving direction of the moving assembly, the size of the first opening area is not less than the size of the second opening area.

8. The graded-depth inclined grating etching system of claim 1, wherein, The first etching baffle is fixedly connected in the ion beam etching chamber by a fixing piece.

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