Numerical control frequency modulation filter

By controlling the rapid switching of the PIN diode in the RF resonant circuit through an ultra-high-speed voltage converter, the problem of slow frequency hopping speed of high-power frequency hopping filters is solved, achieving the same fast frequency hopping effect as low-power frequency hopping filters, thus improving the frequency hopping speed of the entire radio.

CN223957531UActive Publication Date: 2026-02-27HEFEI POWERSKY ELECTRONICS TECH CO LTD
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Patent Information

Application Number
CN202520620209.1
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2025-04-02
Publication Date
2026-02-27
Estimated Expiration
2035-04-02

AI Technical Summary

Technical Problem

High-power frequency hopping filters have a slower frequency hopping speed, making it difficult to achieve the same fast frequency hopping effect as low-power frequency hopping filters in the same frequency hopping radio, thus affecting the overall speed of the radio.

Method used

An ultra-high-speed voltage converter is used to rapidly turn the PIN diode on and off in the RF resonant circuit by controlling the gate-source voltage of the MOSFET. Inductor L23 is used to impede current surges and improve the switching speed of the MOSFET.

Benefits of technology

The frequency hopping speed of the high-power frequency hopping filter is less than 10µs, achieving a fast frequency hopping effect comparable to that of the low-power frequency hopping filter, thus improving the frequency hopping speed of the entire radio.

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Abstract

The utility model discloses a numerical control frequency modulation filter and a voltage converter. Wherein the voltage converter comprises field effect transistors Q1 and Q2, diodes D1 and D2, resistors R1, R2 and R3 and an inductor L23; one end of the resistor R3 is connected with the grid electrode of the field effect transistor Q2, and the source electrode of the field effect transistor Q2 is connected with a power supply; the diode D2 is connected with the inductor L23 in parallel, one end of the parallel connection is connected with the drain electrode of the field effect transistor Q2 and the grid electrode of the field effect transistor Q1, and the other end of the parallel connection is connected with the cathode of the diode D1; after the resistor R2 and the resistor R1 are connected in series, the resistor R2 is connected with the drain electrode of the field effect transistor Q2, and the resistor R1 is connected with the drain electrode of the field effect transistor Q1; the source electrode of the field effect transistor Q1 is connected with the anode of the diode D1; and a power supply is connected between the connecting lines of the resistor R2 and the resistor R1. According to the ultra-high-speed switching circuit of the utility model, the principle that the inductor can hinder sudden change of current is utilized, the gate-source voltage of the field-effect transistor is rapidly increased, and the field-effect transistor is rapidly conducted, so that the frequency hopping speed of the high-power frequency hopping filter reaches within 10us.
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Description

TECHNICAL FIELD

[0001] The utility model relates to frequency hopping filter technical field, concretely is a kind of numerical control frequency modulation filter. BACKGROUND

[0002] The fast frequency hopping and filtering function of numerical control frequency hopping filter is the guarantee of the anti-interference, anti-interception and security of frequency hopping radio, the faster the frequency hopping speed of radio, the stronger the signal anti-interference and anti-interception ability, and the frequency hopping speed of frequency hopping filter determines the speed of frequency hopping radio.The frequency hopping speed of frequency hopping filter is mainly affected by digital control circuit, and the control circuit is based on triode / field effect tube, the power capacity of frequency hopping filter is related to voltage size, the higher the voltage, the greater the power capacity of filter, and correspondingly, the rated voltage resistance value of triode / field effect tube is also greater.

[0003] And the junction capacitance of triode / field effect tube with greater voltage resistance value is also greater, because junction capacitance needs to be charged and discharged, the greater the capacitance, the longer the time needed for charging and discharging, so the switching speed of triode / field effect tube will be slower.Therefore, the current situation is that the frequency hopping speed of high-power frequency hopping filter is slower than that of low-power frequency hopping filter.At present, the frequency hopping speed of high-power frequency hopping filter on the market is about 20us, and the frequency hopping speed of low-power frequency hopping filter is about 10us.The high-power frequency hopping filter slows down the frequency hopping speed of the whole radio. SUMMARY

[0004] The technical problem to be solved by the utility model lies in: providing an ultrahigh-speed voltage switching circuit, through the ultrahigh-speed switching circuit, the on-off of PIN tube in the PIN tube array of high-power frequency hopping filter radio frequency part resonant loop array can be controlled quickly, the purpose of fast frequency hopping is achieved, the frequency hopping speed is less than 10us, and is equivalent to the frequency hopping speed of low-power frequency hopping filter.When high-power frequency hopping filter and low-power frequency hopping filter work in the same frequency hopping radio, the overall speed of frequency hopping radio can be improved.

[0005] To solve the above technical problems, the utility model provides the following technical scheme:

[0006] A numerical control frequency modulation filter, comprising: a voltage converter;Wherein, the voltage converter includes field effect tube Q1, Q2, diode D1, D2, resistor R1, R2, R3, inductor L23;

[0007] One end of resistor R3 is connected with the gate of field effect tube Q2, and the source of field effect tube Q2 is connected with power supply;

[0008] Diode D2 is connected with inductor L23 in parallel, one end of the parallel connection is connected with the drain of field effect tube Q2 and the gate of field effect tube Q1, and the other end of the parallel connection is connected with the cathode of diode D1;

[0009] The resistor R2 is connected with the drain of the field effect transistor Q2 after being connected with the resistor R1 in series, and the resistor R1 is connected with the drain of the field effect transistor Q1.

[0010] The source of the field effect transistor Q1 is connected with the anode of the diode D1, and the resistor R2 is connected with the resistor R1.

[0011] In the embodiment, the source of the field effect transistor Q2 is connected with a-3.3V power supply.

[0012] In the embodiment, the resistor R2 is connected with the resistor R1 and is connected with a 400V power supply.

[0013] In the embodiment, the other end of the resistor R3 is connected with an input level signal.

[0014] In the embodiment, the digitally controlled frequency modulation filter comprises a radio frequency resonant loop module, wherein the radio frequency resonant loop module comprises a plurality of resonant capacitor arrays, and each resonant capacitor array is connected with a voltage converter.

[0015] In the embodiment, each resonant capacitor array comprises two resonant capacitor branches, and each resonant capacitor branch comprises an inductor, a capacitor and a diode.

[0016] In each resonant capacitor branch, one end of the inductor is connected with the cathode of the diode of the resonant capacitor branch and the capacitor of the resonant capacitor branch, and the other end of the inductor is connected with the anode of the diode D1, the anode of the diode of each resonant capacitor branch is grounded, and the capacitors in the two resonant capacitor branches are connected.

[0017] Compared with the prior art, the voltage converter of the utility model skillfully uses the principle that the electric current is hindered from suddenly changing to rapidly increase the gate-source voltage of the field effect transistor and quickly turn on the field effect transistor, so that the frequency hopping speed of the high-power frequency hopping filter reaches within 10us. BRIEF DESCRIPTION OF DRAWINGS

[0018] Figure 1 The voltage converter of the embodiment of the utility model is shown in the figure.

[0019] Figure 2 The radio frequency resonant loop module of the utility model is shown in the figure. DETAILED DESCRIPTION

[0020] In order to facilitate the technical personnel in the art to understand the technical scheme of the utility model, the technical scheme of the utility model is further described in conjunction with the drawings of the specification.

[0021] The terms "first", "second", "third", etc. are used only for descriptive purposes and are not to be construed as indicating or implying relative importance or an indicated number of technical features. Thus, features defined with "first", "second" can explicitly or implicitly include one or more of the features. In the description of the present application, the meaning of "a plurality of" is two or more, unless otherwise explicitly and specifically limited.

[0022] Referring to Figure 1 and Figure 2 As shown in the figure, a numerical control frequency modulation filter comprises a voltage converter and a radio frequency resonant loop module, and the voltage converter is connected with the radio frequency resonant loop module. The super-speed voltage converter controls the on-off of the PIN tube of the resonant loop in the radio frequency resonant loop module, so as to achieve the purpose of switching frequency. Here, the super-speed refers to the frequency hopping speed less than 10us.

[0023] Referring to Figure 1 As shown in the figure, in an embodiment of the utility model, the voltage converter includes field effect tubes Q1, Q2, diodes D1, D2, resistors R1, R2, R3 and inductor L23.

[0024] One end of resistor R3 is connected with the gate of field effect tube Q2, and the source of field effect tube Q2 is connected with the power supply. Diode D2 is connected with inductor L23 in parallel, and one end of the parallel connection is connected with the drain of field effect tube Q2 and the gate of field effect tube Q1, and the other end of the parallel connection is connected with the cathode of diode D1. Resistor R2 is connected with the drain of field effect tube Q2 after being connected with resistor R1 in series, and resistor R1 is connected with the drain of field effect tube Q1. The source of field effect tube Q1 is connected with the anode of diode D1, and the resistor R2 and resistor R1 connection line is connected with the power supply.

[0025] In the embodiment, the source of field effect tube Q2 is connected with-3.3V power supply, and the resistor R2 and resistor R1 connection line is connected with 400V power supply. In addition, the other end of resistor R3 is connected with the input level signal.

[0026] In the embodiment, the model of field effect tubes Q1 and Q2 is STL2N80K5, the model of diodes D1 and D2 is BAS3010B-03, and the inductance value of inductor L23 is adjusted according to the size of output load current.

[0027] Referring to Figure 2 As shown in the figure, in an embodiment of the utility model, the radio frequency resonant loop module includes a plurality of resonant capacitor arrays, and each resonant capacitor array is connected with one voltage converter.

[0028] In the embodiment, each resonant capacitor array includes two resonant capacitor branches, and each resonant capacitor branch includes an inductor, a capacitor and a diode.

[0029] One end of the inductor in each resonant capacitor branch is connected to the cathode of the diode in the resonant capacitor branch and the capacitor in the resonant capacitor branch, and the other end of the inductor in each resonant capacitor branch is connected to the anode of the diode D1. The anode of the diode in each resonant capacitor branch is grounded, and the capacitors in the two resonant capacitor branches are connected.

[0030] In the embodiment, the multi-resonant capacitor array has 10 resonant capacitor arrays, and one of the resonant capacitor arrays is taken as an example. It is understood that the circuit connection mode, technical scheme, working principle and technical effects obtained by the remaining 9 resonant capacitor arrays are the same as those of the resonant capacitor array taken as an example.

[0031] In the embodiment, the first resonant capacitor array includes an inductor L1, a diode VD1 and a capacitor C1 in one resonant capacitor branch, and an inductor L10, a diode VD10 and a capacitor C10 in the other resonant capacitor branch.

[0032] The anode of the diode VD1 is grounded, and the cathode is connected to one end of the inductor L1 and one end of the capacitor C1. The other end of the inductor L1 is connected to the anode of the diode D1 in the voltage converter connected to the resonant capacitor array.

[0033] The anode of the diode VD10 is grounded, and the cathode is connected to one end of the inductor L10 and one end of the capacitor C10. The other end of the inductor L10 is connected to the anode of the diode D1 in the voltage converter connected to the resonant capacitor array. In addition, the capacitor C1 is connected to the capacitor C10. It is understood that the other end of the inductor L1 and the other end of the inductor L10 are connected to the anode of the diode D1 in the same voltage converter.

[0034] Please refer to Figure 1 and Figure 2 In the embodiment, the field effect transistor works based on the on-off of the drain and source. When the input interface DRIVE_IN is high +3.3V, the field effect transistor Q2 is turned on, -3.3V reaches the drain through the source of the field effect transistor Q2, the gate-source voltage of the field effect transistor Q1 does not reach the opening voltage, Q1 is not turned on, -3.3V passes through the inductor L23 and the diode D1, and is output to the PIN diode (such as diode VD1 and VD10) of the radio frequency resonant circuit through the output interface DRIVE_OUT. At this time, the PIN diode is turned on to the ground to form a current loop. This process is completed very quickly, and the time is about 4us.

[0035] When the input interface DRIVE_IN is low-3.3V, the gate-source voltage of the field effect transistor Q2 does not reach the required voltage drop for opening, Q2 is not conductive, and the -3.3V current of the output interface DRIVE_OUT disappears rapidly. At this time, the inductor L23 can hinder the current mutation, the inductor L23 rapidly lifts the gate voltage of the field effect transistor Q1, and forms a loop with the diode D2, so that the field effect transistor Q1 is rapidly conductive, the +400V voltage is output to the PIN tube (such as diodes VD1, VD10) of the radio frequency circuit through the output interface DRIVE_OUT, and the corresponding PIN diode is cut off. The time for completing this process is about 7us.

[0036] It is obvious for those skilled in the art that the present application is not limited to the details of the above exemplary embodiments, and can be implemented in other specific forms without departing from the spirit or essential characteristics of the present application. Therefore, the embodiments should be regarded as exemplary and non-limiting, and the scope of the present application is defined by the appended claims rather than the above description, and it is intended to include all changes falling within the meaning and scope of the equivalent elements of the claims, and any reference signs in the claims should not be regarded as limiting the claims.

[0037] The above-described embodiments only represent the implementation of the present application, and the protection scope of the present application is not limited to the above-described embodiments. For those skilled in the art, on the premise of not departing from the concept of the present application, a number of modifications and improvements can be made, which all belong to the protection scope of the present application.

Claims

1. A digitally controlled frequency modulation filter, characterized by, It includes: A voltage converter; wherein the voltage converter includes field effect tubes Q1, Q2, diodes D1, D2, resistors R1, R2, R3, and inductor L23; One end of the resistor R3 is connected with the gate of the field effect tube Q2, and the source of the field effect tube Q2 is connected with the power supply; The diode D2 is connected with the inductor L23 in parallel, and one end of the parallel connection is connected with the drain of the field effect tube Q2 and the gate of the field effect tube Q1, and the other end of the parallel connection is connected with the cathode of the diode D1; The resistor R2 is connected with the drain of the field effect tube Q2 after being connected with the resistor R1 in series, and the resistor R1 is connected with the drain of the field effect tube Q1; The source of the field effect tube Q1 is connected with the anode of the diode D1, and the resistor R2 is connected with the resistor R1.

2. The digitally controlled frequency modulation filter of claim 1, wherein, The source of the field effect tube Q2 is connected with the-3.3V power supply.

3. The digitally controlled frequency modulation filter of claim 1, wherein, The resistor R2 is connected with the resistor R1.

4. The digitally controlled frequency modulation filter of claim 1, wherein, The other end of the resistor R3 is connected with the input level signal.

5. The digitally controlled frequency modulation filter of claim 1, wherein, The digitally controlled frequency modulation filter includes a radio frequency resonant loop module; wherein the radio frequency resonant loop module includes a plurality of resonant capacitor arrays, and each resonant capacitor array is connected with a voltage converter.

6. The digitally controlled frequency modulation filter of claim 5, wherein, Each resonant capacitor array includes two resonant capacitor branches; each resonant capacitor branch includes an inductor, a capacitor, and a diode; One end of the inductor in each resonant capacitor branch is connected with the cathode of the diode in the resonant capacitor branch and the capacitor in the resonant capacitor branch, and the other end of the inductor in each resonant capacitor branch is connected with the anode of the diode D1; the anode of the diode in each resonant capacitor branch is connected with the ground; and the capacitors in the two resonant capacitor branches are connected.