Perovskite cell annealing device

Abstract

The utility model relates to the technical field of solar cells, and discloses a perovskite cell annealing device, which comprises a heating box body provided with a heating cavity; the bearing table is arranged in the heating cavity and is suitable for bearing a perovskite substrate; the infrared heating modules are arranged in the heating cavity and located on the two opposite sides, in the height direction of the heating box body, of the bearing table correspondingly. The pair of infrared heating modules is suitable for uniformly heating the upper surface and the lower surface of the perovskite substrate. Compared with the heating structure in the conventional perovskite annealing equipment, the heating structure provided by the utility model has the advantages that the perovskite substrate is heated by using the pair of infrared heating modules, so that the condition that the surface of the perovskite substrate is heated firstly can be avoided while rapid heating is realized, and the uniformity of heating is ensured. Besides, the infrared heating module can rapidly heat the perovskite substrate in a short time, so that not only can the annealing time be effectively shortened, but also the energy consumption in the annealing process can be reduced, and the production cost of perovskite can be reduced.

Description

TECHNICAL FIELD

[0001] The utility model relates to solar cell technical field, concretely relates to a perovskite cell annealing device. BACKGROUND

[0002] Perovskite solar cell is a kind of new thin-film solar cell technology, compared with traditional silicon-based solar cell, it has multiple advantages such as high efficiency, low cost, easy preparation etc.Generally speaking, perovskite solar cell includes electron transport layer, perovskite layer, hole transport layer and electrode layer in turn.The quality of perovskite crystal in perovskite layer has a great influence on the subsequent photoelectric conversion efficiency of perovskite solar cell.

[0003] At present, to promote the growth of perovskite grain, the hot plate or hot air in perovskite annealing equipment is usually used to heat perovskite substrate and film layer. However, the heating mode of hot plate or hot air has the problems of poor heating uniformity, slow heating and high energy consumption, so that the crystallization of perovskite and the precipitation of organic gas cannot reach good effect. In addition, the high energy consumption heating mode also leads to the increase of perovskite production cost. SUMMARY

[0004] Therefore, the utility model provides a perovskite cell annealing device to solve the problems of poor heating uniformity, slow heating speed and high energy consumption of the heating structure in the current perovskite annealing equipment.

[0005] The utility model provides a perovskite cell annealing device, which comprises:

[0006] The heating box body is provided with a heating cavity.

[0007] The bearing table is arranged in the heating cavity and is adapted to bear the perovskite substrate.

[0008] A pair of infrared heating modules are arranged in the heating cavity and are respectively located on the opposite sides of the bearing table along the height direction of the heating box body. The pair of infrared heating modules are adapted to uniformly heat the upper surface and the lower surface of the perovskite substrate.

[0009] Beneficial effects: compared with the heating structure in the current perovskite annealing equipment, the utility model discloses a pair of infrared heating module for perovskite substrate heating, can promote the resonance of molecules, atoms through infrared light, make these atoms, molecules movement accelerate and increase thermal motion energy by mutual friction, so can realize rapid heating in short time, promote the rapid crystallization of perovskite while preventing the surface of perovskite substrate from appearing the condition of first heating, ensure the uniformity of heating, secondly, can also avoid the upper surface of perovskite substrate preferentially crystallizing, cause the accumulation of organic gas in perovskite substrate, reduce the probability of producing white spot and black spot in the annealing process. In addition, since the infrared heating module can make perovskite substrate rapidly heat in short time, not only can effectively shorten the annealing time, but also can reduce the energy consumption in the annealing process, reduce the production cost of perovskite.

[0010] In an alternative embodiment, the bearing table comprises a support plate and a pair of support side plates, the support plate is provided with a through hole for infrared light to pass through, and a pair of support side plates are located on the opposite sides of the support plate along the length or width direction of the support plate.

[0011] Beneficial effects: the utility model discloses a pair of support side plates on the opposite sides of the length or width direction of the support plate, which can form a stable bearing structure for the bearing table, so that the perovskite substrate can be stably placed on the support plate. Secondly, by providing a through hole on the support plate for infrared light to pass through, the lower surface of the perovskite substrate can directly contact the infrared light, so that the heating efficiency can be improved, the heating time can be shortened, and the upper surface and the lower surface of the perovskite substrate can be uniformly heated by a pair of infrared heating modules.

[0012] In an alternative embodiment, a first heat conduction plate is arranged on the bearing surface of the support plate, and the first heat conduction plate covers the through hole; the first heat conduction plate is heated by the infrared heating module located below the bearing surface of the support plate and radiates heat towards the perovskite substrate.

[0013] And / or, a second heat conduction plate is arranged above the bearing surface of the bearing table, and the second heat conduction plate is heated by the infrared heating module located above the bearing surface of the support plate and radiates heat towards the perovskite substrate.

[0014] Beneficial effects: Since the infrared light may cause light damage to the perovskite film layer, by setting the first heat conduction plate and / or the second heat conduction plate between the perovskite substrate and the infrared heating module, the infrared light can be shielded to avoid direct contact of the infrared light with the perovskite substrate. Secondly, since the first heat conduction plate and the second heat conduction plate have good thermal conductivity, when the first heat conduction plate and the second heat conduction plate are heated by the infrared heating module, the perovskite substrate can be heated. It can be seen that this indirect heating method not only reduces the possibility of damage to the perovskite substrate caused by the infrared light, but also ensures the heating effect of the perovskite substrate.

[0015] In an optional embodiment, the support side plate is a telescopic plate, and the telescopic direction of the telescopic plate is consistent with the height direction of the heating box body; or the perovskite substrate annealing device further comprises a driving member, a driving end of the driving member is connected with the support side plate, and the driving member is configured to drive the bearing table to move along the height direction of the heating box body.

[0016] Beneficial effects: Whether the support side plate is set as a telescopic plate or the driving end of the driving member is connected with the support side plate, the position of the perovskite substrate in the heating cavity can be flexibly adjusted according to actual needs by the operator, so as to ensure the crystallization rate of the perovskite substrate after annealing.

[0017] In an optional embodiment, the perovskite substrate annealing device further comprises a temperature sensor and a controller electrically connected with the temperature sensor and the infrared heating module, and the temperature sensor is arranged in the heating cavity and located at the side or above the perovskite substrate.

[0018] Beneficial effects: By arranging the temperature sensor in the heating cavity, the real-time temperature of the surface of the perovskite substrate during the annealing process can be obtained. Further, the temperature sensor is electrically connected with the controller, so that the controller can automatically adjust the operating power of the infrared heating module based on the temperature information fed back by the temperature sensor, and intelligent control is realized.

[0019] In an optional embodiment, the perovskite substrate annealing device further comprises an air extraction device, the air extraction device comprises an air extraction fan and an air extraction pipeline communicated between an air inlet of the air extraction fan and the heating cavity, and a switch valve is arranged on the air extraction pipeline.

[0020] Beneficial effects: By arranging the air extraction device, the organic gas generated during the annealing process can be timely extracted, so as to avoid excessive accumulation of the organic gas in the heating cavity. In addition, by arranging the switch valve on the air extraction pipeline, the air extraction power of the air extraction device can be conveniently controlled by the operator.

[0021] In an alternative embodiment, the inner side wall of the heating box is provided with an air extraction hole connected to the air extraction pipeline, and the air extraction hole is arranged close to the bearing surface of the support plate.

[0022] Beneficial effects: During the annealing process of the perovskite substrate, organic gas is mostly accumulated near the bearing surface of the support plate. Therefore, arranging the air extraction hole near this position can shorten the air extraction path, so that the organic gas can be discharged through the air extraction pipeline in a short time, thereby improving the air extraction efficiency. At the same time, since the organic gas can be extracted in time, accumulation of the organic gas around the perovskite substrate can be effectively avoided, and pollution to the perovskite substrate can be prevented.

[0023] In an alternative embodiment, a cooling assembly is further included, and the cooling assembly includes a cooling liquid flow channel arranged in the side wall of the heating box and a water chiller connected to the cooling liquid flow channel.

[0024] Beneficial effects: The cooling assembly can be arranged to cool the heating box, so that the heating box can always be kept within a preset temperature range, and the situation of excessively high temperature can be prevented.

[0025] In an alternative embodiment, a gas supply assembly is further included, and the gas supply assembly includes a flow meter and two groups of gas supply pipelines, one end of each group of the gas supply pipelines is located in the heating cavity and is respectively located on opposite sides of the bearing table along the height direction of the heating box, and the other end is located outside the heating cavity and is connected to the flow meter.

[0026] And / or, the gas supply pipeline is further provided with a gas heating element.

[0027] Beneficial effects: The gas supply assembly can be arranged to create a gas atmosphere suitable for the annealing of the perovskite substrate in the heating cavity, so that the perovskite substrate is prevented from being oxidized during the annealing process, thereby improving the product quality and stability. On the other hand, inert gas or CDA (Compressed Dry air) can be introduced to cool the perovskite substrate after the perovskite substrate is annealed. In addition, the flow meter can be arranged to cooperate with the air extraction device to ensure the stability of the atmosphere in the heating cavity. Furthermore, the gas heating element arranged on the gas supply pipeline can keep the gas entering the heating cavity through the gas supply pipeline at the same temperature as the perovskite substrate, thereby maintaining the stability of the temperature in the heating cavity.

[0028] In an alternative embodiment, the heating box is further provided with an opening connected to the heating cavity and a box door adapted to cover and seal the opening.

[0029] Beneficial effects: This invention facilitates the insertion and removal of perovskite substrates into the heating chamber by providing an opening in the heating chamber. Furthermore, the presence of a door on the heating chamber, suitable for covering and sealing the opening, allows a sealed cavity to be formed within the heating chamber during the annealing process. Attached Figure Description

[0030] To more clearly illustrate the specific embodiments of this utility model or the technical solutions in the prior art, the drawings used in the description of the specific embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this utility model. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0031] Figure 1 This is a schematic diagram of the structure of a heating box according to an embodiment of the present utility model;

[0032] Figure 2 A schematic diagram of a perovskite substrate placed inside a heating cavity;

[0033] Figure 3 This is a schematic diagram of another heating box body according to an embodiment of the present utility model;

[0034] Figure 4 This is a schematic diagram of the structure of a perovskite battery annealing device according to an embodiment of the present invention;

[0035] Figure 5 for Figure 4 The diagram shows the structure of the perovskite solar cell annealing device from another perspective.

[0036] Explanation of reference numerals in the attached figures:

[0037] 1. Heating chamber; 101. Heating cavity; 102. Exhaust vent; 103. Opening; 2. Support platform; 201. Support plate; 2011. Through hole; 2012. Support surface; 202. Support side plate; 3. Infrared heating module; 4. Temperature sensor; 5. Exhaust device; 501. Exhaust fan; 502. Exhaust duct; 503. Switch valve; 6. Cooling assembly; 601. Chiller; 7. Gas supply assembly; 701. Flow meter; 702. Gas supply duct; 703. Gas heating element; 8. Chamber door; 9. Perovskite substrate; 10. First heat conduction plate. Detailed Implementation

[0038] In order to make the purpose, technical scheme and advantages of the embodiments of the utility model clearer, the technical scheme in the embodiments of the utility model will be described clearly and completely in combination with the drawings in the embodiments of the utility model, obviously, the described embodiments are part of the embodiments of the utility model, rather than all the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by the person skilled in the art without creative labor belong to the protection scope of the utility model.

[0039] In view of the problems of poor heating uniformity, slow temperature rising speed and high energy consumption of the heating structure in the current perovskite annealing equipment, the utility model provides a perovskite battery annealing device.

[0040] The embodiments of the utility model will be described below in combination with Figures 1 to 5 .

[0041] According to the embodiments of the utility model, as Figures 1 to 3 indicated, a perovskite battery annealing device is provided, which comprises a heating box body 1, a bearing table 2 and a pair of infrared heating modules 3.

[0042] Specifically, the heating box body 1 is provided with a heating cavity 101; the bearing table 2 is arranged in the heating cavity 101 and is adapted to bear a perovskite substrate 9; the pair of infrared heating modules 3 are arranged in the heating cavity 101 and are respectively located at opposite sides of the bearing table 2 along the height direction of the heating box body 1; the pair of infrared heating modules 3 are adapted to uniformly heat the upper surface and the lower surface of the perovskite substrate 9.

[0043] Compared with the heating structure in the current perovskite annealing equipment, in the embodiments, the perovskite substrate 9 is heated by the pair of infrared heating modules 3, which can promote the resonance of molecules and atoms by infrared light, accelerate the movement of these atoms and molecules and increase the thermal motion energy by mutual friction, so that rapid temperature rising can be realized in a short time, the rapid crystallization of perovskite is promoted, the surface of the perovskite substrate 9 is prevented from being first heated, and the uniformity of temperature rising is ensured; secondly, the upper surface of the perovskite substrate 9 can be prevented from being first crystallized, the accumulation of organic gas in the perovskite substrate 9 is avoided, and the probability of white spots and black spots in the annealing process is reduced. In addition, since the infrared heating module 3 can rapidly heat the perovskite substrate 9 in a short time, not only the annealing time can be effectively shortened, but also the energy consumption in the annealing process can be reduced, and the production cost of perovskite is reduced.

[0044] It should be noted that the heating cavity 101 in the embodiment is a sealed cavity, so that impurities in the external environment can be avoided from contacting the perovskite substrate 9 during the annealing process, thereby ensuring the crystallization rate of the perovskite. It can be understood that, in order to ensure that each region of the perovskite substrate 9 can be uniformly heated by the infrared heating module 3, the orthographic projection of the perovskite substrate 9 along the height direction of the heating box 1 needs to fall within the infrared heating module 3.

[0045] It should be further noted that, since the bearing surface 2012 of the bearing table 2 is located between the lower surface of the perovskite substrate 9 and the lower infrared heating module 3, in order to ensure the consistency of the temperature rise of the upper surface and the lower surface of the perovskite substrate 9, the distance between the upper surface of the perovskite substrate 9 and the upper infrared heating module 3 can be increased. Of course, the operating power of the upper infrared heating module 3 can also be adjusted.

[0046] In addition, the infrared heating module 3 in the embodiment is internally provided with an infrared tube.

[0047] According to one embodiment of the present application, as shown in Figure 1 The bearing table 2 includes a support plate 201 and a pair of support side plates 202. The support plate 201 is provided with a through hole 2011 through which infrared light passes. Along the length or width direction of the support plate 201, the pair of support side plates 202 are located on opposite sides of the support plate 201. In the embodiment, the support side plates 202 are respectively arranged on opposite sides of the support plate 201 in the length or width direction, so that the bearing table 2 forms a stable bearing structure, thereby ensuring that the perovskite substrate 9 can be stably placed on the support plate 201. Secondly, by arranging the through hole 2011 through which infrared light passes on the support plate 201, the lower surface of the perovskite substrate 9 can directly contact the infrared light, so that the heating efficiency can be improved and the heating time can be shortened, and the pair of infrared heating modules 3 can uniformly heat the upper surface and the lower surface of the perovskite substrate 9.

[0048] It should be noted that, in order to reduce the interference of the support plate 201 to the infrared light, a plurality of through holes 2011 can be arranged on the region where the perovskite substrate 9 contacts the support plate 201, or a larger through hole 2011 can be arranged, as long as the cross-sectional area of the through hole 2011 along the height direction of the heating box 1 is smaller than the cross-sectional area of the perovskite substrate 9 along the height direction of the heating box 1. The embodiments of the present application do not make special limitations in this regard. For example, in one embodiment, a stepped hole is arranged on the support plate 201, and the perovskite substrate 9 is placed on the support plate 201 through the stepped hole.

[0049] According to one embodiment of the present application, as shown in Figure 2 and Figure 3As shown, the first heat-conducting plate 10 is arranged on the bearing surface 2012 of the support plate 201 and covers the through hole 2011; the first heat-conducting plate 10 is heated by the infrared heating module 3 located below the bearing surface 2012 of the support plate 201 and radiates heat towards the perovskite substrate 9; and / or, the second heat-conducting plate is arranged above the bearing surface 2012 of the support plate 201, is heated by the infrared heating module 3 located above the bearing surface 2012 of the support plate 201, and radiates heat towards the perovskite substrate 9.

[0050] Since the infrared light may cause light damage to the perovskite film layer, the first heat-conducting plate 10 and / or the second heat-conducting plate arranged between the perovskite substrate 9 and the infrared heating module 3 can shield the infrared light to avoid direct contact between the infrared light and the perovskite substrate 9. In addition, since the first heat-conducting plate 10 and the second heat-conducting plate have good heat conductivity, the perovskite substrate 9 can be heated when the first heat-conducting plate 10 and the second heat-conducting plate are heated by the infrared heating module 3. It can be seen that this indirect heating method not only reduces the possibility of damage to the perovskite substrate 9 caused by the infrared light, but also ensures the heating effect of the perovskite substrate 9.

[0051] It should be noted that the first heat-conducting plate 10 and the second heat-conducting plate in the embodiment are non-transparent or low-transparency materials, such as graphite plates.

[0052] According to an embodiment of the present application, the support side plate 202 is a telescopic plate, and the telescopic direction of the telescopic plate is consistent with the height direction of the heating box 1; or, the perovskite substrate 9 annealing device further comprises a driving member, the driving end of the driving member is connected with the support side plate 202, and is used to drive the bearing table 2 to move along the height direction of the heating box 1. Whether the support side plate 202 is arranged as a telescopic plate or the driving end of the driving member is connected with the support side plate 202, the position of the perovskite substrate 9 in the heating cavity 101 can be flexibly adjusted according to actual needs by the operator, so as to ensure the crystallization rate of the perovskite substrate after annealing.

[0053] According to an embodiment of the present application, as shown in Figure 2 and Figure 3 The perovskite substrate 9 annealing device further comprises a temperature sensor 4 and a controller electrically connected with the temperature sensor 4 and the infrared heating module 3, the temperature sensor 4 is arranged in the heating cavity 101 and located on the side or above the perovskite substrate 9. In the present embodiment, the temperature sensor 4 is arranged in the heating cavity 101, so that the real-time temperature of the surface of the perovskite substrate 9 during the annealing process can be obtained. Further, the temperature sensor 4 is electrically connected with the controller, so that the controller can automatically adjust the operating power of the infrared heating module 3 based on the temperature information fed back by the temperature sensor 4, thereby realizing intelligent control.

[0054] According to one embodiment of the present application, Figure 4 and Figure 5 As shown in the drawings, it further comprises an air extraction device 5, the air extraction device 5 comprises an air extraction fan 501 and an air extraction pipeline 502 which is in communication with the air inlet of the air extraction fan 501 and the heating cavity 101, and a switch valve 503 is arranged on the air extraction pipeline 502. In this embodiment, the air extraction device 5 can timely extract the organic gas generated in the annealing process, thereby avoiding excessive accumulation of the organic gas in the heating cavity 101. In addition, the switch valve 503 is arranged on the air extraction pipeline 502, so that the air extraction power of the air extraction device 5 can be conveniently controlled by the operator. For example, the switch valve 503 can be a butterfly valve. It can be understood that, if a variable frequency fan is selected as the air extraction fan 501, the air extraction power can be controlled by changing the working frequency of the fan.

[0055] According to one embodiment of the present application, Figure 2 and Figure 3 As shown in the drawings, the inner side wall of the heating box 1 is provided with an air extraction hole 102 which is in communication with the air extraction pipeline 502, and the air extraction hole 102 is arranged close to the bearing surface 2012 of the support plate 201. During the annealing process of the perovskite substrate 9, the organic gas is mostly accumulated near the bearing surface 2012 of the support plate 201. Therefore, the air extraction hole 102 is arranged near this position, so as to shorten the air extraction path, and the organic gas can be extracted through the air extraction pipeline 502 in a short time, thereby improving the air extraction efficiency. At the same time, since the organic gas can be timely extracted, the accumulation of the organic gas around the perovskite substrate 9 can be effectively avoided, and the pollution of the perovskite substrate 9 can be prevented.

[0056] In order to better control the air extraction direction of the air extraction pipeline 502 in the heating cavity 101, a wind guide plate which is in rotational cooperation with the hole wall of the air extraction hole 102 can be arranged in the air extraction hole 102. Further, since the airflow of the heating cavity 101 can form a stagnation zone between the pair of support side plates 202, a ventilation gap can be arranged on the support side plate 202, so as to increase the flowability of the airflow between the air extraction hole 102 and the stagnation zone, and avoid the accumulation of the organic gas at this position.

[0057] According to one embodiment of the present application, Figure 4 As shown in the drawings, it further comprises a cooling assembly 6, the cooling assembly 6 comprises a cooling liquid flow channel arranged in the side wall of the heating box 1 and a water chiller 601 which is in communication with the cooling liquid flow channel. In this embodiment, the cooling assembly 6 can be arranged to cool the heating box 1, so as to ensure that the heating box 1 can always be in a preset temperature range, and prevent the temperature from being too high.

[0058] According to one embodiment of the present application, Figure 4 and Figure 5As shown, the heating box 1 further comprises a gas supply assembly 7, which comprises a flow meter 701 and two sets of gas supply pipes 702, one end of the two sets of gas supply pipes 702 is located in the heating cavity 101 and is located on opposite sides of the bearing table 2 along the height direction of the heating box 1, and the other end is located outside the heating cavity 101 and is connected with the flow meter 701; and / or, the gas supply pipe 702 is further provided with a gas heating element 703.

[0059] The gas supply assembly 7 is provided, on the one hand, a gas atmosphere suitable for annealing of the perovskite substrate 9 can be created in the heating cavity 101, and the perovskite substrate 9 is prevented from being oxidized during the annealing process, thereby improving the product quality and stability. On the other hand, after the perovskite substrate is annealed, inert gas or CDA (Compressed Dry air, compressed dry air) can be introduced to cool the perovskite substrate 9. Secondly, by providing the flow meter 701, the gas supply assembly 7 and the air exhaust device 5 can be matched with each other to ensure the stability of the atmosphere in the heating cavity 101. Furthermore, by further providing the gas heating element 703 on the gas supply pipe 702, the gas entering the heating cavity 101 through the gas supply pipe 702 can maintain the same temperature as the perovskite substrate 9, thereby maintaining the stability of the temperature in the heating cavity 101.

[0060] According to one embodiment of the present application, as shown in Figure 3 The heating box 1 is further provided with an opening 103 communicating with the heating cavity 101 and a box door 8 suitable for covering and sealing the opening 103. In this embodiment, the opening 103 is provided on the heating box 1 to facilitate the operator to take and place the perovskite substrate 9 in the heating cavity 101. The box door 8 suitable for covering and sealing the opening 103 is provided on the heating box 1, which can form a sealed cavity in the heating cavity 101 during the annealing process.

[0061] It should be noted that the heating box 1 in the embodiment of the present application can be provided with a plurality of heating cavities 101 which are not communicated with each other, and the bearing table 2, the infrared heating module 3, the temperature sensor 4, the air exhaust device 5 and the gas supply assembly 7 are separately arranged in each heating cavity 101. For example, the heating box 1 is provided with two heating cavities 101 which are spaced apart along the height direction thereof, and the heating box 1 is further provided with two openings 103 which are respectively communicated with the two heating cavities 101. It can be understood that one box door 8 can be used to cover and seal the two openings 103, or two box doors 8 can be used to cover and seal the two openings 103 respectively.

[0062] The effects of the technical scheme of the present application will be described below in combination with examples and comparative examples.

[0063] Comparative Example 1:

[0064] The FTO substrate containing 20nm-thick nickel oxide and having a size of 10cm*10cm is placed on the support table 2 in the heating cavity 101, the preheating temperature is set to 70℃ and maintained for 5min, the process section temperature is set to 150℃ and maintained for 15min, then CH3F gas is introduced and maintained for 2min, and then CDA is introduced for cooling; after the FTO substrate is cooled, a 500nm-thick perovskite layer is formed.

[0065] The 30nm-thick C60 electron transport layer is prepared on the perovskite layer, P2 is scribed, the 80nm-thick copper battery layer is prepared, P3 is scribed, and the perovskite battery is obtained.

[0066] Example 1: The difference from Comparative Example 1 is that the FTO substrate is placed on the support plate 201 of the support table 2, the support plate 201 of the support table 2 is located between the pair of infrared heating modules 3, the power of the pair of infrared heating modules 3 is first set to 20% of the total power (the total power is 25KW), the power of the pair of infrared heating modules 3 is increased to 75% of the total power after 1min, CH3F gas is introduced after 4min, and CDA is introduced for cooling after 2min.

[0067] Example 2: The difference from Comparative Example 1 is that the FTO substrate is placed on the graphite plate, the graphite plate is placed on the support plate 201 of the support table 2, the support plate 201 of the support table 2 is located between the pair of infrared heating modules 3 and is located at a position away from the lower infrared heating module 1 / 3, the power of the lower infrared heating module 3 is first set to 20% of the total power (the total power is 25KW), and the power of the upper infrared heating module 3 is set to 15% of the total power, the power of the pair of infrared heating modules 3 is increased to 75% of the total power after 1min, CH3F gas is introduced after 4min, and CDA is introduced for cooling after 2min.

[0068] The battery parameters of each example are as follows:

[0069]

[0070]

[0071] Although the embodiments of the present application are described in conjunction with the drawings, various modifications and changes can be made by those skilled in the art without departing from the spirit and scope of the present application, and such modifications and changes fall within the scope defined by the appended claims.

Claims

1. A perovskite cell annealing apparatus, characterized by, The device comprises: a heating box (1) provided with a heating cavity (101); a bearing table (2) arranged in the heating cavity (101) and adapted to bear a perovskite substrate (9); a pair of infrared heating modules (3) arranged in the heating cavity (101) and respectively located on opposite sides of the bearing table (2) along the height direction of the heating box (1); the pair of infrared heating modules (3) are adapted to uniformly heat the upper and lower surfaces of the perovskite substrate (9).

2. The perovskite cell annealing apparatus of claim 1, wherein, The bearing table (2) comprises a support plate (201) and a pair of support side plates (202); the support plate (201) is provided with through holes (2011) for infrared light to pass through; along the length or width direction of the support plate (201), the pair of support side plates (202) are located on opposite sides of the support plate (201).

3. The perovskite cell annealing apparatus of claim 2, wherein, A first heat conduction plate (10) is arranged on the bearing surface (2012) of the support plate (201), and the first heat conduction plate (10) covers the through holes (2011); the first heat conduction plate (10) is heated by the infrared heating module (3) located below the bearing surface (2012) of the support plate (201) and radiates heat towards the perovskite substrate (9); And / or, a second heat conduction plate is arranged above the bearing surface (2012) of the bearing table (2); the second heat conduction plate is heated by the infrared heating module (3) located above the bearing surface (2012) of the support plate (201) and radiates heat towards the perovskite substrate (9).

4. The perovskite cell annealing apparatus of claim 2, wherein, The support side plate (202) is a telescopic plate, and the telescopic direction of the telescopic plate is consistent with the height direction of the heating box (1); or, the perovskite substrate (9) annealing device further comprises a driving member, a driving end of the driving member is connected with the support side plate (202), and the driving member is used for driving the bearing table (2) to move along the height direction of the heating box (1).

5. The perovskite cell annealing apparatus of claim 2, wherein Further comprising a temperature sensor (4) and a controller electrically connected with the temperature sensor (4) and the infrared heating module (3); the temperature sensor (4) is arranged in the heating cavity (101) and located on the side or above the perovskite substrate (9).

6. The perovskite cell annealing apparatus of any one of claims 2 to 5, wherein, Further comprising an air extraction device (5); the air extraction device (5) comprises an air extraction fan (501) and an air extraction pipeline (502) communicating the air inlet of the air extraction fan (501) and the heating cavity (101); the air extraction pipeline (502) is provided with an on-off valve (503).

7. The perovskite cell annealing apparatus of claim 6, wherein, The inner side wall of the heating box (1) is provided with an air extraction hole (102) communicating with the air extraction pipeline (502); the air extraction hole (102) is arranged close to the bearing surface (2012) of the support plate (201).

8. The perovskite cell annealing apparatus of any one of claims 1 to 5, wherein, Further comprising a cooling assembly (6); the cooling assembly (6) comprises a cooling liquid flow channel arranged in the side wall of the heating box (1) and a water chiller (601) communicating with the cooling liquid flow channel.

9. The perovskite cell annealing apparatus of any one of claims 1 to 5, wherein, The gas supply assembly (7) comprises a flow meter (701) and two groups of gas supply pipes (702), one end of the two groups of gas supply pipes (702) is located in the heating cavity (101) and is respectively located on the opposite sides of the bearing table (2) along the height direction of the heating box (1), and the other end is located outside the heating cavity (101) and is connected with the flow meter (701); And / or, the gas supply pipe (702) is further provided with a gas heating element (703).

10. The perovskite cell annealing apparatus of any one of claims 1 to 5, wherein, The heating box (1) is further provided with an opening (103) communicating with the heating cavity (101) and a box door (8) suitable for covering and sealing the opening (103).

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