Electrode structure with double-layer metal photoetching

Abstract

The utility model discloses an electrode structure with double-layer metal photoetching, which belongs to the technical field of photoetching process, and comprises an electrode substrate, a first photoetching pattern is photoetched on the electrode substrate, the first photoetching pattern is composed of first metal lines, a second photoetching pattern is photoetched on the first photoetching pattern, the second photoetching pattern is composed of second metal lines, and the second metal lines are arranged on the electrode substrate. And the first metal line and the second metal line are overlapped. The beneficial effects of the utility model are that when the first metal line is disconnected, the second metal line carries out supplementary connection at the disconnection position of the first metal line, thereby obviously reducing the disconnection on the electrode structure, guaranteeing the integrity and stability of the electrode structure, and improving the performance and yield of a device.

Description

TECHNICAL FIELD

[0001] The utility model relates to the field of photoetching technology, more particularly, it relates to an electrode structure with double-layer metal photoetching. BACKGROUND

[0002] Photoetching is a key process in integrated circuit manufacturing, which is to transfer the pattern prepared in advance on the mask to a substrate by photochemical reaction principle, so that selective etching and ion implantation are possible, and photoetching is a crucial link in the process of micro-nano device preparation.

[0003] But the metal line on the electrode structure of the traditional technology has obvious open circuit, and a kind of electrode structure with double-layer metal photoetching needs to be designed, to significantly reduce the open circuit on the electrode structure, ensure the integrity and stability of electrode structure, thereby improve the performance and yield of device. UTILITY MODEL CONTENT

[0004] In view of the deficiencies in the prior art, the utility model aims at providing an electrode structure with double-layer metal photoetching.

[0005] To achieve the above object, the utility model provides the following technical scheme:

[0006] An electrode structure with double-layer metal photoetching, comprising electrode base, first photoetching pattern is photoetched on the electrode base, the first photoetching pattern is composed of first metal line, second photoetching pattern is photoetched on the first photoetching pattern, the second photoetching pattern is composed of second metal line, and the first metal line and the second metal line coincide.

[0007] Further setting is that the cross section of the first metal line is semicircular.

[0008] Further setting is that the line width of the first metal line is larger than that of the second metal line.

[0009] Further setting is that the line width of the first metal line is smaller than that of the second metal line.

[0010] By adopting the above technical scheme, the utility model has the beneficial effects that when the first metal line has open circuit, the second metal line is connected at the open circuit of the first metal line, so that the open circuit on the electrode structure is significantly reduced, the integrity and stability of the electrode structure are ensured, and the performance and yield of the device are improved. DRAWING DESCRIPTION

[0011] Fig. 1 It is the structural schematic diagram of the utility model embodiment.

[0012] Fig. 2 Structure schematic diagram for line width of first metal line being larger than line width of second metal line.

[0013] Fig. 3 Structure schematic diagram for line width of first metal line being smaller than line width of second metal line.

[0014] In the figure: electrode base 1, first metal line 2, second metal line 3. DETAILED DESCRIPTION

[0015] Reference Figs. 1 to 3 Further description is made to the embodiments of the utility model.

[0016] An electrode structure with double-layer metal photoetching, comprising an electrode base 1, a first photoetching pattern is photoetched on the electrode base 1, the first photoetching pattern is composed of a first metal line 2, a second photoetching pattern is photoetched on the first photoetching pattern, the second photoetching pattern is composed of a second metal line 2, and the first metal line 2 and the second metal line 3 are coincident.

[0017] In use, when the first metal line 2 is broken, the second metal line 3 coincident with the first metal line 2 is connected to the broken part of the first metal line 2, thereby obviously reducing the broken part of the electrode structure, ensuring the integrity and stability of the electrode structure, and improving the performance and yield of the device.

[0018] The cross section of the first metal line 2 is semicircular, which can effectively reduce the resistance when the current passes through, and because the shape is closer to a circle, the current path is smoother, thereby reducing the power loss, and the first metal line 2 is easier to process and form in the manufacturing process, reducing the processing difficulty, the design of the semicircular cross section of the first metal line 2 can effectively reduce stress concentration, so that the stress is more evenly distributed on the electrode, thereby reducing the risk of broken caused by stress concentration, improving the stability of the electrode, and further ensuring the integrity and stability of the electrode structure, thereby improving the performance and yield of the device.

[0019] Embodiment 1: The line width of the first metal line 2 is larger than the line width of the second metal line 3, and the second metal line 3 with smaller line width can reduce the parasitic capacitance, especially in high-frequency signal transmission, avoiding signal delay and interference caused by too large line width of the second metal line 3, and the second metal line 3 with smaller line width can reduce the photoetching difficulty.

[0020] In the embodiment 2, the line width of the first metal line 2 is smaller than that of the second metal line 3, and the second metal line 3 with a larger line width can significantly reduce the parasitic resistance, thereby reducing the energy loss in the current transmission process, and meanwhile, the second metal line 3 with a larger line width can provide a larger surface area, thereby optimizing the current distribution, reducing the electromigration phenomenon caused by the uneven current density, improving the overall performance of the electrode structure, and further improving the performance and yield of the device.

[0021] The above merely describes the preferred embodiments of the present application and is not intended to limit the present application, and any common change and replacement within the technical scheme range of the present application should be included in the protection range of the present application.

Claims

1. An electrode structure with double-layer metal lithography, comprising an electrode base (1), on which a first lithography pattern is lithographically applied, characterized in that, The first photoetching pattern is composed of first metal lines (2), a second photoetching pattern is photoetched on the first photoetching pattern, the second photoetching pattern is composed of second metal lines (3), the first metal lines (2) and the second metal lines (3) are coincident, and the cross section of the first metal lines (2) is semicircular.

2. The electrode structure with dual layer metal photolithography according to claim 1, wherein, The line width of the first metal lines (2) is larger than the line width of the second metal lines (3).

3. The electrode structure with dual layer metal photolithography according to claim 1, wherein, The line width of the first metal lines (2) is smaller than the line width of the second metal lines (3).

Images