Bidirectional solid-state circuit breaker module

Abstract

The utility model provides a bidirectional solid state circuit breaker module comprising a first sub-module and a second sub-module, the first sub-module comprises a first part, and the second sub-module comprises a second part. At least the first part of the first sub-module and at least the second part of the second sub-module have the same configuration and are symmetrically arranged relative to each other. Each of the first part and the second part comprises a substrate and at least two power semiconductors and at least one energy absorption element which are arranged on the substrate, and the at least one energy absorption element is arranged in the middle of the substrate; the at least two power semiconductors are arranged around the at least one energy absorbing element.

Description

TECHNICAL FIELD

[0001] The utility model belongs to the field of circuit breaker, especially relates to a bidirectional solid state circuit breaker module. BACKGROUND

[0002] The statements in this section merely provide background information related to the utility model and can not constitute the prior art.

[0003] A circuit breaker is a switching device that can close (also called make), carry, and open (also called break) the current under normal circuit conditions and can close, carry, and open the current under abnormal circuit conditions within a specified time, such as short circuit, overload, or other emergency situations.

[0004] A solid state circuit breaker (SSCB) is one of the intelligent forms of circuit breakers, which can replace the traditional mechanical circuit breaker for circuit protection. The SSCB is a non-contact switching device, and its making and breaking are realized by controlling the carriers and channels of the carriers inside the power semiconductor. The SSCB usually includes power semiconductors and energy absorbers. When the current circuit is abnormal, such as when the current circuit is short-circuited or overloaded, breaking the power semiconductor will cause a large amount of inductive energy to accumulate in the current circuit, so the energy absorber is usually needed to absorb these inductive energies, and finally realize the circuit protection function. The bidirectional SSCB is a kind of SSCB that can realize the bidirectional control and cut-off of current, and is more and more widely used in the field of power electronic devices. SUMMARY

[0005] Therefore, the purpose of the utility model is to overcome the defects of the prior art, provide a bidirectional solid state circuit breaker module, which includes a first sub-module and a second sub-module, the first sub-module includes a first part, the second sub-module includes a second part, and at least the first part of the first sub-module and at least the second part of the second sub-module have the same configuration and are symmetrically arranged relative to each other, each of the first part and the second part includes a substrate and at least two power semiconductors and at least one energy absorbing element arranged on the substrate, the at least one energy absorbing element is arranged in the middle of the substrate, and the at least two power semiconductors are arranged around the at least one energy absorbing element.

[0006] According to the bidirectional solid state circuit breaker module of the utility model, preferably, the at least two power semiconductors are symmetrically arranged relative to the at least one energy absorbing element.

[0007] According to the bidirectional solid-state circuit breaker module of the utility model, preferably, the first submodule, the second submodule and the third submodule are respectively symmetrically arranged with corresponding gate drive components.

[0008] According to the bidirectional solid-state circuit breaker module of the utility model, preferably, the first submodule, the second submodule and the third submodule are respectively symmetrically arranged with corresponding gate drive components.

[0009] According to the bidirectional solid-state circuit breaker module of the utility model, preferably, the first submodule and the second submodule respectively include first wiring terminals and second wiring terminals for connecting external circuits, and the first wiring terminals and the second wiring terminals are symmetrically arranged.

[0010] According to the bidirectional solid-state circuit breaker module of the utility model, preferably, the first submodule, the second submodule and the third submodule are respectively symmetrically arranged with corresponding gate drive components.

[0011] According to the bidirectional solid-state circuit breaker module of the utility model, preferably, the first submodule and the second submodule respectively include first wiring terminals and second wiring terminals for connecting external circuits, and the first wiring terminals and the second wiring terminals are symmetrically arranged.

[0012] According to the bidirectional solid-state circuit breaker module of the utility model, preferably, the first submodule and the second submodule respectively include first wiring terminals and second wiring terminals for connecting external circuits, and the first wiring terminals and the second wiring terminals are symmetrically arranged.

[0013] According to the bidirectional solid-state circuit breaker module of the utility model, preferably, the first submodule and the second submodule respectively include first wiring terminals and second wiring terminals for connecting external circuits, and the first wiring terminals and the second wiring terminals are symmetrically arranged.

[0014] According to the bidirectional solid-state circuit breaker module of the utility model, preferably, the first submodule and the second submodule respectively include first wiring terminals and second wiring terminals for connecting external circuits, and the first wiring terminals and the second wiring terminals are symmetrically arranged.

[0015] Compared with the prior art, the bidirectional solid-state circuit breaker module of the utility model arranges power semiconductors and energy absorbing elements on the same substrate, realizes heterogeneous packaging, in addition, two submodules of the bidirectional solid-state circuit breaker module include parts with the same configuration, and the same configuration parts are symmetrically arranged, thereby optimizing the layout and mapping of the bidirectional solid-state circuit breaker, improving its voltage clamping performance and thermal performance. The same and similar substrates are utilized and the connection components are reduced, the packaging and connection costs are saved, and the size of the solid-state short-circuit breaker is reduced. BRIEF DESCRIPTION OF DRAWINGS

[0016] The utility model further illustrates the embodiments of the utility model with reference to the drawings, wherein

[0017] Figure 1 It is the circuit schematic view of bidirectional solid state circuit breaker module according to an embodiment of the utility model;

[0018] Figure 2 It is the structure top view of bidirectional solid state circuit breaker module according to an embodiment of the utility model;

[0019] Figure 3 It is the structure top view of bidirectional solid state circuit breaker module according to another embodiment of the utility model;

[0020] Figure 4 It is the structure top view of bidirectional solid state circuit breaker module according to another embodiment of the utility model;

[0021] Figure 5 It is the structure top view of bidirectional solid state circuit breaker module according to another embodiment of the utility model;

[0022] Figure 6 It is the circuit schematic view of bidirectional solid state circuit breaker module according to another embodiment of the utility model;

[0023] Figure 7 It is the structure top view of bidirectional solid state circuit breaker module according to an embodiment of the utility model; and

[0024] Figure 8 It is the structure top view of bidirectional solid state circuit breaker module according to another embodiment of the utility model. DETAILED DESCRIPTION

[0025] In order to make the purpose of the utility model, technical scheme and advantage more clear and obvious, the utility model is further explained in detail by specific embodiments in combination with the drawings below.It should be understood that the specific embodiments described here are only used to explain the utility model, and are not used to limit the utility model.

[0026] When making bidirectional SSCB products, power semiconductors and energy absorbers are usually separately homogenously packaged, and then assembled and wired, and the inventor finds that such bidirectional SSCB products occupy larger space, use more connecting members, have high mold opening cost, complex structure, poor symmetry.In addition, since the power semiconductor in the SSCB product is a heating element and the energy absorber generally does not heat, considering that the temperature characteristic of the energy absorber is poor and the temperature drift is serious, in order to make the energy absorber not affected by the heat dissipation of the power semiconductor, the power semiconductor and the energy absorber are not usually integrated and packaged together in the prior art.

[0027] The inventors also discovered that the symmetry (bidirectional consistency) of the bidirectional solid-state circuit breaker not only significantly improves design efficiency during the design process but also has multi-dimensional significance in practical circuit applications. Specifically, symmetry ensures that the circuit breaker provides consistent and predictable protection capabilities in both directions through structural symmetry and parameter matching, thereby improving system reliability. In the case of multiple devices connected in parallel, symmetry helps achieve more accurate current sharing by reducing impedance differences, avoiding local overloads and extending device lifespan. In particular, device paralleling includes both internal and external paralleling within the module. Compared to external paralleling, internal paralleling results in smaller stray parameters and better current sharing. For symmetrically designed multi-device paralleling, preferably, the power of the entire module... The input and output terminals are also symmetrical (preferably arranged on both sides of the module). Therefore, when the system is expanded, there is no need to increase the module size (or change the module design). Expansion can be achieved by using multiple modules in parallel (i.e., external parallel connection). This symmetrical design simplifies power terminal connections, facilitates power routing, and provides better parallel characteristics. More preferably, if the energy absorber is also integrated into the module, no additional energy absorption needs to be considered when connecting multiple modules in parallel. Furthermore, symmetry helps optimize thermal management by balancing power distribution, reducing hotspot formation and improving overall heat dissipation efficiency. Further research shows that this symmetrical design can also simplify system debugging processes, reduce maintenance costs, and provide a better solution for high-density integrated circuits. Because existing technologies package power semiconductors and energy absorbers separately and then assemble them into a product, this discrete design requires interconnecting the various packaged components externally via connectors such as wire harnesses and straight conductors (e.g., copper busbars), resulting in low system integration and complex parasitic parameters. In this scenario, the consistency of individual components is limited by variations in packaging processes, and the relative differences in connector contact surfaces and traces are also significant, easily introducing additional contact resistance and distributed inductance, making it difficult to guarantee the symmetry of electrical characteristics. Particularly in fields such as marine power systems, aerospace power systems, and DC microgrid systems, power distribution systems typically require redundant backups. These redundant systems often require interconnection with bidirectional solid-state circuit breakers (SSDs), and the symmetry of the bidirectional SSDs can improve the symmetry of the backup systems. Furthermore, multiple bidirectional SSDs are often required in these fields. In such cases, if traditional methods are used to lay out numerous individually packaged power semiconductor modules and energy absorber modules on a circuit board to implement multiple bidirectional SSDs, it not only occupies more space and increases system complexity but also introduces accumulated errors due to multi-level interconnection, making it even more difficult to guarantee the symmetry of the bidirectional SSDs. In addition, discrete packaging can lead to uneven heat distribution, exacerbating localized temperature rises and further reducing system stability and lifespan.

[0028] Based on the aforementioned problems, the inventors creatively conceived of a method to symmetrically arrange identical sub-modules to construct bidirectional solid-state circuit breaker modules, thus ensuring the symmetry of the resulting bidirectional solid-state circuit breakers. Furthermore, in applications requiring multiple bidirectional solid-state circuit breakers, the symmetry of the electrical characteristics of the power system can be well guaranteed by simply arranging the bidirectional solid-state circuit breaker modules. In this case, the sub-modules are smaller, easier to mold, and less expensive, making it easier to achieve symmetry.

[0029] One embodiment of this utility model provides a bidirectional solid-state circuit breaker module. First, high current is achieved using power semiconductors connected in parallel, and high energy absorption capacity is achieved using energy absorbers connected in series. Then, two branches are connected in parallel to form a unidirectional solid-state circuit breaker. Finally, the two unidirectional solid-state circuit breakers are connected in reverse series to form a bidirectional solid-state circuit breaker. Alternatively, multiple parallel energy absorbers can be connected in series with the branches. See also... Figure 1 The circuit diagram of the bidirectional solid-state circuit breaker module shown in this embodiment includes a first circuit unit and a second circuit unit connected in series between its first and second terminals TA and TB. The first circuit unit includes a first set of energy absorption elements EA1~EAm connected in series with each other and a first set of power semiconductors MA1~MAn connected in parallel with each other. The first set of energy absorption elements is connected in parallel with the first set of power semiconductors. The second circuit unit includes a second set of energy absorption elements EB1~EBm connected in series with each other and a second set of power semiconductors MB1~MBn connected in parallel with each other. The second set of energy absorption elements is connected in parallel with the second set of power semiconductors.

[0030] Taking m=2 and n=6 as an example, this section introduces... Figure 1 The circuit diagram shown corresponds to the structure of a bidirectional solid-state circuit breaker module. See also... Figure 2 A top view of the structure of a bidirectional solid-state circuit breaker module of one embodiment is shown, which includes a first submodule and a second submodule, respectively corresponding to... Figure 1The first and second circuit units, the first submodule and the second submodule have the same configuration and are arranged symmetrically to each other. The first submodule includes a first substrate A and first to sixth power semiconductors MA1 to MA6 and first and second energy absorption elements EA1 and EA2 disposed on the first substrate A, wherein the first and second energy absorption elements EA1 and EA2 are disposed in the middle of the first substrate A and close to the second substrate B, and the first to sixth power semiconductors MA1 to MA6 are disposed around the first and second energy absorption elements EA1 and EA2. The second submodule includes a second substrate B and first to sixth power semiconductors MB1 to MB6 and first and second energy absorption elements EB1 and EB2 disposed on the second substrate B, wherein the first and second energy absorption elements EB1 and EB2 are disposed in the middle of the second substrate B and close to the first substrate A, and the first to sixth power semiconductors MB1 to MB6 are disposed around the first and second energy absorption elements EB1 and EB2. The spacing between each of the first to sixth power semiconductors in each submodule is greater than a first predetermined threshold, preferably greater than 0.5 mm, more preferably greater than 0.8 mm. Furthermore, the power semiconductors and energy absorption elements in each submodule are not clustered together; that is, the distance between them is greater than a second predetermined threshold, preferably greater than 2 mm. Additionally, the first and second submodules each include a first terminal block TA and a second terminal block TB for circuit connection to external circuitry. Preferably, the first terminal block TA and the second terminal block TB are symmetrically arranged on their respective substrates.

[0031] In embodiments of this invention, arranging power semiconductors around the energy absorption element allows for shorter circuit lengths, thereby improving system reliability; the loop inductance of each circuit component can be kept very short, thus reducing parasitic inductance; symmetrical current paths are easily achieved, improving electrical performance; and integration density is increased while manufacturing processes are simplified. However, in embodiments of this invention, arranging power semiconductors around the energy absorption element does not mean that the power semiconductors completely surround the energy absorption element. For example, in... Figure 2 In the illustrated embodiment, no power semiconductor is disposed to the right of energy absorption elements EA1 and EA2 and to the left of energy absorption elements EB1 and EB2.

[0032] Alternatively, the first to sixth power semiconductors MA1 to MA6 and the first and second energy absorption elements EA1 and EA2 of the first submodule are included in the first part of the first submodule, while the first to sixth power semiconductors MB1 to MB6 and the first and second energy absorption elements EB1 and EB2 of the second submodule are included in the second part of the second submodule. The first part of the first submodule and the second part of the second submodule have the same configuration and are arranged symmetrically. Preferably, the other parts of the first submodule and the second submodule also have the same configuration and are arranged symmetrically.

[0033] When bidirectional solid-state circuit breakers are used as bus tie switches, their symmetrical electrical characteristics are a significant advantage for redundant power supply systems that serve as backups. Traditional solid-state circuit breakers integrate power semiconductors and energy absorption components externally, resulting in numerous connectors, large installation tolerances, and difficulty in ensuring good symmetry. The design of this embodiment makes it very easy to control the symmetry of design and manufacturing processes within the integrated power module. This embodiment achieves a bidirectional solid-state circuit breaker by symmetrically arranging portions of power submodules with identical configurations. Thus, only one substrate layout template and corresponding component mapping are required during fabrication, simplifying mold making and significantly reducing process steps and costs. Furthermore, the symmetrical arrangement of portions of the two identical power submodules also improves the symmetry and reliability of the bidirectional control of the bidirectional solid-state circuit breaker.

[0034] In this embodiment, preferably, to further improve the symmetry of the bidirectional control of the circuit breaker and to improve the dynamic and static current sharing among the power semiconductors and energy absorption elements connected in parallel in a single direction within the module, the arrangement of the power semiconductors and energy absorption elements on the first substrate A and the second substrate B is also symmetrical. Figure 2Taking the first sub-module as an example, it includes an upper region and a lower region symmetrical about the center line L. The upper and lower regions have the same configuration, each including one energy absorption element and three power semiconductors. Specifically, the upper region of the first sub-module includes a first energy absorption element EA1 and first to third power semiconductors EA1~EA3, and the lower region includes a second energy absorption element EA2 and fourth to sixth power semiconductors MA4~MA6. More preferably, the first to sixth power semiconductors are the same power semiconductor, and the first to second energy absorption elements are the same energy absorption elements. The power semiconductor can be one or more of semiconductor switching elements known in the art, such as MOSFETs and IGBTs. The energy absorption element can be one or more of energy absorbers known in the art, such as MOVs (metal oxide thermistors), TVS (transient voltage suppressor diodes), and absorption capacitors. Considering that different energy absorption elements have different characteristics, in the design of a highly integrated solid-state circuit breaker module, when multiple energy absorption elements are included in the same module, the multiple energy absorption elements are arranged such that the absorption capacitor, TVS, and MOV are sequentially moved away from the power semiconductor. Specifically, considering the response speed of energy absorption elements, from fastest to slowest, the order is absorption capacitor, TVS, and MOV. Response speed determines the voltage clamping effect; the faster the response speed, the better the voltage clamping effect. The closer the elements are, the better the voltage clamping effect. Therefore, to achieve the highest voltage clamping performance, the absorption capacitor is positioned closest to the power semiconductor, followed by the TVS, with the MOV furthest from the power semiconductor. Considering the absorption capacity of the energy absorption elements, from strongest to weakest, the order is MOV, TVS, and absorption capacitor. In the embodiments of this invention, arranging multiple energy absorption elements such as absorption capacitor, TVS, and MOV sequentially furthest from the power semiconductor enables the inner, closer energy absorption elements to quickly clamp the voltage, and then the outer, furthest energy absorption elements begin to respond and absorb energy. This prevents overvoltage during power semiconductor shutdown and absorbs short-circuit energy. Those skilled in the art will understand that when only two types of energy absorption elements are included in the same module, they are arranged in a similar manner, with the energy absorption element with the faster response speed placed closer to the power semiconductor. That is, the distance between the absorption capacitor and the power semiconductor is smaller than the distance between the TVS and / or MOV and the power semiconductor, and the distance between the absorption capacitor and / or TVS and the power semiconductor is smaller than the distance between the MOV and the power semiconductor.

[0035] In this embodiment, preferably, the bidirectional solid-state circuit breaker module further includes a backplate P, on which a first substrate A and a second substrate B are arranged. The substrates can be arranged on the substrates in a specific manner known in the art, such as surface activation bonding technology, solder bonding, adhesive bonding, etc.

[0036] In this embodiment, preferably, the bidirectional solid-state circuit breaker module further includes a housing E, a first submodule and a second submodule are encapsulated by the housing E, and terminals TA and TB extend to the outside of the housing E.

[0037] In this embodiment, preferably, the bidirectional solid-state circuit breaker module is a potted encapsulated module. Potting encapsulation improves the insulation performance of the various components within the module. The potting material is an insulating material, preferably epoxy resin or silicone. More preferably, the outer shell is an epoxy resin potted shell.

[0038] In the fabrication process of a bidirectional solid-state circuit breaker module, after the substrate and related components are installed, an insulating shell is installed, and then potting material is filled into the module. The potting material can be insulating materials such as silicone or epoxy resin. The filling height is preferably just enough to submerge the components and electrical connections (conductive parts). The purpose of filling is for insulation, because the safety distances for static electricity and creepage between the components and electrical connections in the air are insufficient. Filling with insulating material meets safety requirements, and this can be considered the final step in the encapsulation process.

[0039] According to embodiments of this utility model, if the potting material is a flowable material such as silicone, an insulating shell E is necessary to contain and protect the potting material. That is, potting and encapsulation are performed after the insulating shell E is installed. If the potting material is a curable material such as epoxy resin, the insulating shell can be omitted, and the curable potting material can also be used as the insulating shell E.

[0040] In this embodiment, preferably, the first substrate A and the second substrate B are patterned substrates, i.e., substrates with conductive pattern layers. Preferably, the substrate is a double-sided copper-plated ceramic plate, wherein the copper layer on the side of the ceramic plate used for arranging relevant components (including power semiconductors, energy absorption elements, terminals, etc.) is patterned to have a specific circuit layout to achieve a specific function, such as realizing a specific circuit connection. Preferably, the relevant components are mounted to the patterned substrate by soldering or sintering. Specifically, the copper layer in the area where the relevant components are arranged can serve as a terminal for the relevant components. For example, to achieve… Figure 1The circuit connection shown, for the first submodule, involves the first terminal TA, the first to sixth power semiconductors MA1-MA6, and the first energy absorption element EA1 arranged on a continuous first copper layer region to form a terminal. The second copper layer region containing the second energy absorption element EA2 is isolated from the first copper layer region. Then, a wire bond (also called "lead bonding") is made between the other pin of the first energy absorption element EA1 and the copper layer containing the second energy absorption element EA2. A wire bond is also made between the other pin of the first to sixth power semiconductors MA1-MA6 and the second energy absorption element EA2 to electrically connect them and form another terminal of the first submodule. A similar circuit connection arrangement is made for the second submodule: the first terminal TB, the first to sixth power semiconductors MB1-MB6, and the first energy absorption element EB1 are arranged on a continuous first copper layer region to form a terminal. The second copper layer region containing the second energy absorption element EB2 is isolated from the first copper layer region. Then, a wire bond (also called "lead bonding") is made between the other pin of the first energy absorption element EB1 and the copper layer containing the second energy absorption element EB2. Electrical connection is achieved through bonding. The first to sixth power semiconductors MB1-MB6 and another pin of the second energy absorption element EB2 are bonded together to electrically connect them and form another terminal of the second submodule. Finally, electrical connection is achieved by bonding between the other terminal of the first submodule and the other terminal of the second submodule. Thus, a device with… Figure 1 The circuit connection of the bidirectional solid-state circuit breaker module is shown. In this invention, since the first sub-module and the second sub-module have the same configuration, the bidirectional solid-state circuit breaker module can be realized simply by symmetrically arranging and bonding the identical sub-modules together during the manufacturing process.

[0041] When the capacity of the energy absorption elements installed on the first and second submodules is insufficient to meet the requirements, a third submodule, specifically designed to house the energy absorption elements, can be installed between the first and second submodules. See also... Figure 3 A top view of the structure of another embodiment of the bidirectional solid-state circuit breaker module is shown, which is in Figure 2Based on the bidirectional solid-state circuit breaker module shown, a power semiconductor MA7 and MB7 are added to the first submodule (or its first part) and the second submodule (or its second part), respectively, arranged in the corresponding first copper layer region. Another pin is also bonded to electrically connect to another terminal of the corresponding submodule. Furthermore, a third submodule is added, arranged between the first and second submodules. The third submodule includes a third substrate C and four energy absorption elements EA3, EA4 and EB3, EB4 arranged on the third substrate C. Energy absorption elements EA3 and EA4 are used for energy absorption of the first submodule, and energy absorption elements EB3 and EB4 are used for energy absorption of the second submodule B. Figure 3 The bidirectional solid-state circuit breaker shown is Figure 1 The circuit diagram shown is an example with m=4 and n=7. In this case, the first submodule (or its first part) and the second submodule (or its second part) themselves lose symmetry, but to ensure the symmetry of bidirectional control, the first and second submodules are arranged centrally symmetrically. The view of the second submodule is the view of the first submodule rotated 180°. The copper layer regions where energy absorption elements EA3, EA4, EB3, and EB4 are located are isolated from each other. Another pin of the second energy absorption element EA2 of the first submodule is bonded to the copper layer where energy absorption element EA3 is located, another pin of energy absorption element EA3 is bonded to the copper layer where energy absorption element EA4 is located, and another pin of energy absorption element EA4 is bonded to another terminal of the first submodule; similarly, another pin of the second energy absorption element EB2 of the second submodule is bonded to the copper layer where energy absorption element EB3 is located, another pin of energy absorption element EB3 is bonded to the copper layer where energy absorption element EB4 is located, and another pin of energy absorption element EB4 is bonded to another terminal of the second submodule. Figure 3 In this configuration, energy absorption elements EA3, EA4, EB3, and EB4 are arranged at equal intervals along the same axis. To achieve symmetry in bidirectional control, energy absorption elements EA3, EA4 and EB3, EB4 are identical energy absorption elements. Those skilled in the art will understand that bidirectional control symmetry can be achieved as long as the energy absorption elements on the third submodule are symmetrically distributed to the first and second submodules. Preferably, the number of energy absorption elements on the third submodule is even, and half of these even-numbered energy absorption elements are symmetrically distributed, preferably centrally symmetrically distributed. Specifically, in... Figure 3 In the third submodule, the energy absorption elements are distributed in an axisymmetric or mirror-symmetric manner.

[0042] Those skilled in the art will understand that Figure 2 and Figure 3 The layout shown is not limited to implementationFigure 1 The circuit connections shown can be fabricated and bonded with different substrate patterns as needed to achieve different circuit connections.

[0043] The bidirectional solid-state circuit breaker comprises power semiconductors connected in reverse series. Taking MOSFET as an example, the reverse series connection of MOSFETs includes two types: common-source connection and common-drain connection. This bidirectional circuit breaker module can easily achieve both common-source and common-drain connections.

[0044] See Figure 4 The top view of another embodiment of the bidirectional solid-state circuit breaker module shown includes a first sub-module and a second sub-module with identical configuration arranged symmetrically, and a third sub-module arranged between the first and second sub-modules. The first sub-module includes a first substrate A and first to fourth power semiconductors MA1 to MA4 and a first energy absorption element EA1 arranged on the first substrate A. The first energy absorption element EA1 is located in the middle of the first substrate A, the first and second power semiconductors MA1 and MA2 are arranged on one side of the first energy absorption element EA1, and the third and fourth power semiconductors MA3 and MA4 are arranged on the other side of the first energy absorption element EA1. The second sub-module has the same configuration as the first sub-module and will not be described again. The third sub-module includes a third substrate C and four energy absorption elements EA2, EA3 and EB2, EB3 arranged on the third substrate C. The energy absorption elements EA2, EA3 and EB2, EB3 are centrally symmetrically distributed; that is, when the third sub-module is rotated 180° around its center, the positions of EA2 and EB2 are interchanged, and the positions of EA3 and EB3 are interchanged.

[0045] In this embodiment, such as Figure 4As shown, the terminals, power semiconductors, and energy absorption elements of the first and second submodules are arranged on continuous first copper layer regions on their respective substrates. The energy absorption elements EA3 and EB3 of the third submodule are arranged on continuous first copper layer regions of the third substrate C. The second and third copper layer regions containing energy absorption elements EA2 and EB2 are isolated from each other and also from the first copper layer regions containing energy absorption elements EA3 and EB3. Furthermore, the substrates of the first and second submodules each have a temperature sensor connection region and, preferably, two sets of gate connection regions arranged symmetrically. The gate connection region is used to connect the gate of the power semiconductor, which is a key part for controlling the turn-on and turn-off of the power semiconductor. The temperature sensor connection region is used to connect a temperature sensor NTC, which has a temperature sensing pin T. Preferably, the temperature sensor connection regions of the first and second submodules are arranged symmetrically, and the temperature sensor NTCs connected to them are also arranged symmetrically. The substrate of the third submodule has a first set of gate connection regions and a second set of gate connection regions preferably symmetrically arranged for connecting corresponding gate pins G. The first set of gate connection regions is electrically connected to the two sets of gate connection regions of the first submodule, and the second set of gate connection regions is electrically connected to the two sets of gate connection regions of the second submodule. In addition, the third submodule also has two symmetrically arranged voltage sensing connection regions. In this embodiment, one pin of power semiconductors MA1 to MA4 and the terminal TA are electrically connected to the first copper layer region on the first substrate A, while the other pin of power semiconductors MA1 to MA4 is electrically connected to each other and to the first copper layer region of the third substrate C. Therefore, power semiconductors MA1 to MA4 are connected in parallel. The first pin of energy absorption element EA1 is electrically connected to the first copper layer region on the first substrate A, and the other pin is electrically connected to one pin of energy absorption element EA2 through the second copper layer region on the third substrate C. The other pin of energy absorption element EA2 is electrically connected to one pin of energy absorption element EA3, and the other pin of energy absorption element EA3 is electrically connected to the first copper layer region of the third substrate C. Therefore, energy absorption elements EA1 to EA3 are connected in series and in parallel with power semiconductors MA1 to MA4. Similarly, energy absorption elements EB1 to EB3 are connected in series, and then in parallel with power semiconductors MB1 to MB4; details will not be described in detail here. Figure 4 The configuration has also been implemented. Figure 1The circuit connection is shown. In this embodiment, preferably, the two sets of gate connection regions of the first submodule are arranged symmetrically, particularly about its center line L; the two sets of gate connection regions of the second submodule are arranged symmetrically, particularly about its center line L; and the first and second sets of gate connection regions in the third submodule are also arranged symmetrically, particularly about the center line perpendicular to the direction of the center line L. Furthermore, more preferably, the gate pins G on the third submodule are also arranged symmetrically. This achieves symmetry in the design and layout of the drive circuit, further increasing symmetry, and also facilitates dynamic and static current sharing between power semiconductors or energy absorption elements connected in parallel in a single direction within the module. Furthermore, in this embodiment, the power semiconductor is selected as a MOSFET, and the MOSFETs of the first and second submodules are configured with a common source. In this invention, the gate connection regions and gate pins can be collectively referred to as "gate drive components".

[0046] In the embodiments of this invention, the layout of the bidirectional solid-state circuit breaker is further optimized based on the drive design. Specifically, from the perspective of a single conduction direction of the bidirectional solid-state circuit breaker, when the bidirectional solid-state circuit breaker module includes a large number of parallel power semiconductors (e.g., each sub-module includes at least 8 power semiconductors), a single set of drives is insufficient to meet the symmetry requirements of each semiconductor chip relative to the drive pin. This is because with a large number of power semiconductors, a single set of gate drive components may lead to excessively long signal transmission distances, resulting in delays or inconsistencies in the drive signals. In this case, this invention adopts a design scheme with multiple sets of gate drive components. Multiple local gate drive component groups are set up, each group being used for gate driving of the power semiconductors located close to it, thereby shortening the transmission distance of the drive signal and ensuring that each power semiconductor can receive symmetrical signals from the drive pins. This design not only improves the consistency of the drive signal but also enhances the reliability and response speed of the system. When the number of power semiconductors is small, a single set of gate drive components can be used for the power semiconductors in a single conduction direction because the signal transmission distance is shorter and the symmetry requirements are relatively easy to meet. This design simplifies the structure while reducing the complexity and cost of the system. From the perspective of the two conduction directions of the bidirectional solid-state circuit breaker, since the topology itself already includes the driving gate components for power semiconductors in both directions, this invention further optimizes the arrangement of the gate driving components. By symmetrically arranging the gate driving components in both directions and placing the gate driving components in a single conduction direction on the same side of the module, the consistency of the driving signal in both conduction directions is ensured. This symmetrical design not only improves the overall performance of the system but also facilitates subsequent module expansion and optimization. When multiple circuit breaker modules are used in parallel, the driving signals in a single conduction direction are also connected in parallel. This parallel design further enhances the consistency of the driving signals, ensuring the synchronization and stability of all modules during parallel operation. In this way, this invention can effectively avoid performance degradation caused by inconsistent driving signals when modules are connected in parallel. In the symmetrical configuration of this invention, gate driving components in different directions are arranged symmetrically, while gate driving components in the same direction are arranged adjacent to each other. This design not only improves the symmetry of the driving signals but also provides greater convenience and consistency for parallel connection of modules. By rationally arranging the drive components, this invention not only meets the technical requirements but also further improves the system's reliability and scalability.

[0047] See Figure 5 The top view of a bidirectional solid-state circuit breaker module according to another embodiment shown includes a first submodule and a second submodule arranged symmetrically with identical configurations, and a third submodule arranged between the first and second submodules. The type and number of components included in each submodule in this embodiment are similar to...Figure 4 The embodiments are the same, the difference being in the substrate pattern, the component layout of the third submodule, and the bonding method. In this embodiment, as... Figure 5 As shown, the energy absorption elements and power semiconductors of the first and second submodules are arranged on a continuous first copper layer region of the substrate, while the second copper layer region where the terminals are located is isolated from the first copper layer region; the energy absorption elements EA2 and EA3 of the third submodule are centrally symmetrically distributed with energy absorption elements EB2 and EB3 in another manner, with energy absorption elements EA2 and EA3 arranged on a continuous first copper layer region, and energy absorption elements EB2 and EB3 arranged on another continuous second copper layer region. This embodiment also achieves... Figure 1 The circuit connections are shown. Specifically, the first copper layer region where power semiconductors MA1 to MA4 are arranged forms one terminal of the four power semiconductors, while the other pin of power semiconductors MA1 to MA4 is connected to the second copper layer region where terminal TA is arranged, thus power semiconductors MA1 to MA4 are connected in parallel. The first pin of energy absorption element EA1 is electrically connected to the first copper layer region on the first substrate A, and the other pin is electrically connected to one pin of energy absorption element EA2. The other pin of energy absorption element EA2 and one pin of energy absorption element EA3 are arranged in a continuous first copper layer region on the third substrate C and are therefore electrically connected to each other. The other pin of energy absorption element EA3 is electrically connected to another pin of power semiconductor MA2. Therefore, energy absorption elements EA1 to EA3 are connected in series with each other and in parallel with power semiconductors MA1 to MA4. Similarly, energy absorption elements EB1 to EB3 are connected in series and then in parallel with power semiconductors MB1 to MB4, which will not be described in detail here. In addition, in this embodiment, MOSFETs are selected as power semiconductors, and the MOSFETs of the first submodule and the second submodule are configured with common drain.

[0048] Another embodiment of this utility model provides a bidirectional solid-state circuit breaker module. In this module, two sets of parallel power semiconductors are connected in series and share a common set of series-connected energy absorption elements. See also... Figure 6 The circuit diagram shown in this embodiment illustrates a bidirectional solid-state circuit breaker module. The module includes a first circuit unit and a second circuit unit connected in series between its first and second terminals TA and TB, and a third circuit unit connected between the first and second terminals TA and TB. The first circuit unit includes a first set of power semiconductors MA1~MAn connected in parallel; the second circuit unit includes a second set of power semiconductors MB1~MBn connected in parallel; and the third circuit unit includes a set of energy absorption elements EA1~EAm connected in series.

[0049] Taking m=4 and n=4 as an example, this section introduces... Figure 6 The circuit diagram shown corresponds to the structure of a bidirectional solid-state circuit breaker module. See also... Figure 7 The top view of a bidirectional solid-state circuit breaker module according to one embodiment shows a first submodule and a second submodule symmetrically arranged with identical configurations, and a third submodule disposed between the first and second submodules. The configuration, layout, and bonding method of the first and second submodules in this embodiment are similar to... Figure 4 The embodiment shown is the same, except that only two energy absorption elements E2 and E3 are arranged symmetrically on the third substrate C of the third submodule, and the power semiconductors of the two submodules share the series circuit of energy absorption elements E1 to E4. Specifically, the first copper layer region on the third substrate C of the third submodule for arranging energy absorption element E2 and the second copper layer region for arranging energy absorption element E3 are isolated from each other. One pin of energy absorption element E1 is electrically connected to the first copper layer region of the first substrate A and thereby electrically connected to terminal TA; the other pin is electrically connected to the first copper layer region of the third substrate C and thereby electrically connected to one pin of energy absorption element E2; another pin of energy absorption element E2 is electrically connected to one pin of energy absorption element E3; another pin of energy absorption element E3 is electrically connected to one pin of energy absorption element E4 through its arranged copper layer region; and another pin of energy absorption element E4 is electrically connected to terminal TB through its arranged first copper layer region of the second substrate B. Thus, energy absorption elements E1 to E4 are electrically connected in series between terminals TA and TB. Figure 4 Similar to the previous embodiment, in this embodiment, the power semiconductor is selected as MOSFET, and the MOSFETs of the first submodule and the second submodule are configured with a common source.

[0050] See Figure 8 A top view of the structure of another embodiment of the bidirectional solid-state circuit breaker module is shown, which includes a first submodule and a second submodule arranged symmetrically with identical configurations, and a third submodule disposed between the first and second submodules. The configuration, layout, and bonding method of the first and second submodules in this embodiment are similar to... Figure 5The illustrated embodiment is the same, except that only two energy absorption elements E2 and E3 are arranged symmetrically on the third substrate C of the third submodule, and the power semiconductors of the two submodules share a series circuit of energy absorption elements E1 to E4. Specifically, the two energy absorption elements E2 and E3 of the third submodule are arranged on a continuous copper layer area on the third substrate C, with one pin of energy absorption element E2 electrically connected to energy absorption element E1 and another pin of energy absorption element E3 electrically connected to energy absorption element E4. Thus, energy absorption elements E1 to E4 are electrically connected between terminals TA and TB. Figure 5 Similar to the previous embodiment, in this embodiment, the power semiconductor is selected as MOSFET, and the MOSFETs of the first submodule and the second submodule are configured as common drain.

[0051] for Figure 6 The circuit connection shown is such that, since the two sub-modules share the energy absorption element, the number of energy absorption elements will not affect the symmetry of the bidirectional control of the bidirectional solid-state circuit breaker module. Therefore, the number of energy absorption elements set on the third sub-module is not limited to an even number. For example, only one or more energy absorption elements can be set on the third sub-module.

[0052] In a preferred embodiment of this invention, the wire bonding uses aluminum wire or copper strip.

[0053] According to other embodiments of the present invention, the conductive pattern layer of the substrate is formed from silver, gold, nickel, conductive polymer, graphene, alloy materials, liquid metal, conductive ink, etc.

[0054] This invention discloses a bidirectional solid-state circuit breaker module that arranges power semiconductors and energy absorption elements on the same substrate, achieving heterogeneous packaging. Furthermore, the two sub-modules of the bidirectional solid-state circuit breaker module include sections with identical configurations, and these identically configured sections are symmetrically arranged. This optimizes the layout and mapping of the bidirectional solid-state circuit breaker, improving its voltage clamping and thermal performance. Utilizing identical and similar substrates and reducing connection components saves packaging and connection costs, and reduces the size of the solid-state circuit breaker. Moreover, those skilled in the art can extend the design of the bidirectional solid-state circuit breaker module, including current ratings and tripping capabilities.

[0055] Although the present invention has been described through preferred embodiments, the present invention is not limited to the embodiments described herein, and includes various changes and variations without departing from the scope of the present invention.

Claims

1. A bidirectional solid state circuit breaker module, characterized by, The first sub-module includes a first portion, the second sub-module includes a second portion, and at least the first portion of the first sub-module and at least the second portion of the second sub-module have the same configuration and are symmetrically arranged relative to each other, each of the first portion and the second portion including a substrate and at least two power semiconductors and at least one energy absorption element arranged on the substrate, the at least one energy absorption element being arranged in a middle portion of the substrate, the at least two power semiconductors being arranged around the at least one energy absorption element.

2. The bidirectional solid state circuit breaker module of claim 1, wherein, The at least two power semiconductors are symmetrically arranged relative to the at least one energy absorption element.

3. Bidirectional solid state circuit breaker module according to claim 1 or 2, characterized in that, A third sub-module is further included, the third sub-module being arranged between the first sub-module and the second sub-module, the third sub-module including a third substrate and at least one energy absorption element arranged on the third substrate.

4. The bidirectional solid state circuit breaker module of claim 3, wherein, Respective gate drive components are symmetrically arranged on the first sub-module, the second sub-module, and the third sub-module, respectively.

5. The bidirectional solid state circuit breaker module according to claim 1 or 2, characterized in that, The first sub-module and the second sub-module each include first and second wiring terminals for connecting external circuits, the first and second wiring terminals being symmetrically arranged.

6. The bidirectional solid state circuit breaker module of claim 1 or 2, wherein, Each of the first portion and the second portion includes an even number of power semiconductors, the first portion and the second portion being mirror-symmetrically arranged relative to each other.

7. The bidirectional solid state circuit breaker module according to claim 1 or 2, characterized in that, Each of the at least two power semiconductors has a spacing from the at least one energy absorption element that is greater than a first predetermined threshold.

8. The bidirectional solid state circuit breaker module of claim 7, wherein, The at least one energy absorption element includes one or more of an absorption capacitor, a TVS, and a MOV, wherein two or three of the absorption capacitor, the TVS, and the MOV are arranged such that the energy absorption element with a faster response speed is closer to the power semiconductor.

9. The bidirectional solid state circuit breaker module of claim 1 or 2, wherein, The at least two power semiconductors have a spacing between each other that is greater than a second predetermined threshold.

10. The bidirectional solid state circuit breaker module of claim 1 or 2, wherein, The substrate is a patterned substrate.

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