Metal droplet collection and reflux system for growing nitride single crystal by flux method

Abstract

The utility model provides a metal droplet collecting and reflowing system for growing nitride single crystals by a fluxing agent method, which is characterized in that a reaction chamber is arranged at the lower part of a furnace body, a reaction container is arranged in the reaction chamber, a heating component is arranged within a certain range from the reaction container, and an air blowing component is arranged at the lower end of the reaction container; the upper end of the reaction chamber is connected with a condenser through a lifting mechanism, a drainage component is arranged at the bottom of the condenser, and the tail end of the drainage component faces the reaction container; an adjusting bracket is arranged in the reaction chamber, a stirring mechanism is arranged on the adjusting bracket, and stirring blades of the stirring mechanism extend into the reaction container; the electric control system is connected with the lifting mechanism, the air blowing assembly, the adjusting support and the stirring mechanism and used for controlling the corresponding mechanisms to act. The device disclosed by the utility model better meets the actual requirements of single crystal growth, can adapt to large-scale and programmed commercialized production, and simultaneously meets the requirements of energy conservation, emission reduction, safety and stability.

Description

Technical Field

[0001] This utility model belongs to the field of semiconductor single crystal growth equipment, specifically relating to a metal droplet collection and reflux system for growing nitride single crystals using a flux method. Background Technology

[0002] The statements in this section are merely background information related to this utility model and do not necessarily constitute prior art.

[0003] As a typical representative of third-generation wide-bandgap semiconductor materials, nitrides possess numerous inherent advantages, including high breakdown voltage, high electron mobility, high thermal conductivity, low dielectric constant, and excellent mechanical properties, leading to their widespread application in civilian fields such as energy-saving lighting, rail transportation, and photovoltaic power generation. Furthermore, nitrides are core components in equipment such as phased array radar power modules, high-frequency lasers, and detectors, perfectly meeting the stringent requirements of defense and security devices for high-performance semiconductor materials. This undoubtedly creates more development opportunities for nitrides in related fields, making the commercialization of nitride substrate fabrication inevitable.

[0004] Flux methods can grow crystals under near-thermodynamic equilibrium conditions, making them a viable method for obtaining high-quality (10) crystals. 3 ~10 5 cm -2 Flux-based single crystal growth is a simple and rapid strategy for achieving large-size nitride single crystals. Compared to liquid-phase production methods such as ammonothermal and high-nitrogen pressure methods, flux-based methods require milder conditions (~800℃, 5MPa) and have a faster crystal growth rate (10~70μm / h), giving them broad commercial prospects in the future semiconductor materials market. However, current flux-based single crystal growth equipment still suffers from poor temperature and pressure control precision. Unstable temperature changes lead to a large amount of molten metal volatilization in the raw materials, making it impossible to effectively control the melt concentration during crystal growth. In addition, when the temperature decreases, these escaped gaseous metals condense in the low-temperature region inside the equipment and then adhere to the equipment surface. Metal adhesion not only causes serious circuit corrosion problems, resulting in a decrease in the conductivity and stability of the circuit, but also further accelerates the aging of components, weakens their mechanical strength and dimensional accuracy, and ultimately negatively impacts the performance, stability, and service life of the entire equipment. Summary of the Invention

[0005] To address the aforementioned problems, this invention proposes a metal droplet collection and reflux system for flux-driven nitride single crystal growth. This system maintains a set concentration of the growth melt within a closed system without requiring additional replenishment, ensuring the melt concentration during crystal growth closely matches the programmed sequence and significantly reducing raw material costs. Simultaneously, the condensation and collection of escaping gaseous metal greatly reduces metal adhesion and equipment aging, extending equipment lifespan. This invention better meets the practical needs of single crystal growth, adapting to large-scale, programmed commercial production while also meeting energy conservation, emission reduction, safety, and stability requirements.

[0006] According to some embodiments, the present invention adopts the following technical solution:

[0007] A metal droplet collection and reflux system for flux-grown nitride single crystals includes a furnace body, a reaction chamber, a heating assembly, a reaction vessel, a condenser, a lifting mechanism, a blower assembly, an adjusting support, a stirring mechanism, and an electrical control system, wherein:

[0008] The lower part of the furnace body is provided with a reaction chamber, and a reaction container is provided in the reaction chamber. The reaction container is used to hold molten metal and seed crystals. A heating component is provided within a certain range from the reaction container, and a blower component is provided at the lower end of the reaction container.

[0009] The upper end of the reaction chamber is connected to a condenser via a lifting mechanism, and a flow guiding component is provided at the bottom of the condenser, with the end of the flow guiding component facing the reaction vessel.

[0010] An adjustment bracket is provided in the reaction chamber, and a stirring mechanism is provided on the adjustment bracket. The stirring blades of the stirring mechanism extend into the reaction vessel.

[0011] The electronic control system is connected to the lifting mechanism, the blower assembly, the adjusting bracket, and the stirring mechanism, and is used to control the corresponding mechanisms to perform their actions.

[0012] The above scheme, by setting heating components around the reaction vessel and blowing components at its lower end, enables the raw materials and additives carried in the reaction vessel to be converted into molten metal and partially volatilized. By setting a condenser and a flow guide component at the upper end of the reaction vessel, the condenser captures and enriches the vaporized metal that escapes in the rising airflow, and then the flow guide component returns it to the reaction vessel.

[0013] In addition, by setting up a stirring mechanism inside the reaction vessel, the concentration of raw materials can be evenly distributed. Furthermore, the height of the condenser and the depth of the stirring mechanism in the reaction liquid can be adjusted by the lifting mechanism and the adjusting bracket, respectively, so as to flexibly adjust according to different environmental factors and effectively ensure the effect.

[0014] As an alternative implementation, the furnace body also has a second cavity for accommodating the electrical control system and the lifting mechanism.

[0015] The electrical control system and the reaction section are isolated to minimize the aging and impact of metal adhesion on the related equipment of the electrical control system.

[0016] As an alternative implementation, the lifting mechanism includes multiple symmetrically arranged rotary motors, each rotary motor being connected to a traction line, and each traction line being connected to one end of the condenser.

[0017] The symmetrical design ensures that the condenser remains stable and smooth during height adjustment and operation.

[0018] As an alternative implementation, the lifting mechanism includes a liftable bracket, and the condenser is mounted on the liftable bracket.

[0019] As an alternative implementation, the upper end of the condenser is connected to the lifting mechanism, the diameter of the lower end of the condenser gradually decreases, and the flow guiding component is provided at the center of the lower end of the condenser, with the flow guiding component having a certain downward additional distance relative to the bottom of the condenser.

[0020] By designing the condenser as an inverted cone, inverted funnel, or funnel-shaped structure, it is possible to facilitate the return of the condensed liquid to the bottom center, and then guide it to the reaction vessel through the guiding components, thus achieving better guiding effect.

[0021] As an alternative implementation, the condenser has a housing, inside which a temperature control component is disposed. The temperature control component is fixedly connected to the inner wall of the housing and is distributed circumferentially along the housing. It is connected to an external electrical control system via a connecting line, and the length of the connecting line has a certain redundancy compared to the distance between the setting position of the electrical control system and the lowest position where the condenser can descend.

[0022] As a further defined embodiment, the maximum diameter of the condenser's outer shell matches the inner diameter of the reaction chamber.

[0023] As a further defined embodiment, the temperature control component is a metal heat-conducting coil or a coolant pipe.

[0024] As an alternative implementation, an airflow valve is provided on the upper part of the reaction chamber.

[0025] This design allows it to be connected to the atmosphere system and vacuum system via an airflow valve to achieve pressure balance within the reaction chamber.

[0026] As an alternative implementation, the heating assembly includes a heating assembly disposed on the inner wall of the reaction chamber and a heating assembly disposed at the lower end of the reaction vessel, with each heating assembly acting individually or in combination.

[0027] Circumferential heating is achieved by heating components installed on the inner wall of the reaction chamber, and bottom heating is achieved by heating components installed at the lower end of the reaction vessel. This allows for heating as needed and contributes to better and more uniform heating, making it easier to form thermal convection and melt temperature gradient.

[0028] As an alternative implementation, the reaction chamber includes a heat insulation layer and a padding layer. The heat insulation layer completely covers the walls and top and bottom areas of the reaction chamber, and the padding layer is located at the lower end of the blower assembly. A thermocouple and a pressure sensor are built into the padding layer.

[0029] Setting up an insulation layer can ensure better heating effect and reduce heat loss. Setting up a padding layer can more stably support the blower assembly and reaction vessel. In addition, the padding layer has built-in thermocouples and pressure sensors, which can monitor the temperature of the reaction chamber and the support pressure in real time.

[0030] As an alternative implementation, the blower assembly is disposed inside the heat insulation layer, and the diameter of the blower assembly matches the bottom diameter of the reaction chamber.

[0031] As an alternative implementation, the reaction vessel is a graphite crucible, a quartz crucible, a boron nitride crucible, or a tungsten crucible.

[0032] As an alternative implementation, the condenser housing is made of boron nitride, platinum, rhodium, or tungsten.

[0033] Compared with the prior art, the beneficial effects of this utility model are as follows:

[0034] This invention achieves self-collection of molten metal solute in isolated substrate epitaxy by adding a metal droplet collection and reflux system to the nitride single crystal growth furnace. This eliminates the need for additional replenishment, effectively controls the appropriate concentration required for substrate epitaxy, reduces the decline in epitaxial crystal quality or the cessation of growth caused by raw material deficiency, and reduces the inherent error caused by additional raw material replenishment.

[0035] This invention utilizes directional airflow within the furnace to enrich gaseous metal onto the surface of the condenser, where it liquefies and flows back to the reaction vessel. This reduces secondary damage caused by the solidification and adhesion of escaping metal gas in other working areas of the equipment, significantly minimizing post-growth equipment cleaning and maintenance. It further promotes the production and commercialization of nitride crystal growth using the flux method.

[0036] To make the above-mentioned objectives, features and advantages of this utility model more apparent and understandable, preferred embodiments are described below in detail with reference to the accompanying drawings. Attached Figure Description

[0037] The accompanying drawings, which form part of this specification, are used to provide a further understanding of this utility model. The illustrative embodiments of this utility model and their descriptions are used to explain this utility model and do not constitute an improper limitation of this utility model.

[0038] Figure 1 This is a schematic diagram of a metal droplet collection and reflux system according to one embodiment;

[0039] Figure 2 This is a schematic diagram of a metal droplet collection and reflux system according to another embodiment;

[0040] Figure 3 This is a cross-sectional schematic diagram of the condenser of a metal droplet collection and reflux system according to another embodiment.

[0041] The components are as follows: 1. Furnace body; 2. Reaction chamber; 3. Gas flow valve; 4. Heating assembly; 4-1. Wall-side heating assembly; 4-2. Bottom heating assembly; 5. Reaction vessel; 5-1. Molten metal; 5-2. Seed crystal; 6. Inverted funnel-shaped condenser; 6-1. Condenser shell; 6-2. Temperature control assembly; 7. Drainage rod; 8. Lifting mechanism; 8-1. Rotary motor; 8-2. Traction line; 9. Blower assembly; 10. Stirring mechanism; 10-1. Movable support; 10-2. Stirring paddle; 11. Electrical control system; 11-1. Speed ​​controller; 11-2. Temperature controller; 12. Pad layer; 13. Movable clamping support; 14. Funnel-shaped condenser; 14-1. Condenser cooling cover; 14-2. Condensation funnel. Detailed Implementation

[0042] The present invention will be further described below with reference to the accompanying drawings and embodiments.

[0043] It should be noted that the following detailed description is illustrative and intended to provide further explanation of the present invention. Unless otherwise specified, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains.

[0044] It should be noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the exemplary embodiments according to the present invention. As used herein, the singular form is intended to include the plural form as well, unless the context clearly indicates otherwise. Furthermore, it should be understood that when the terms "comprising" and / or "including" are used in this specification, they indicate the presence of features, steps, operations, devices, components, and / or combinations thereof.

[0045] Where there is no conflict, the embodiments and features described in this application may be combined with each other.

[0046] Example 1

[0047] As mentioned earlier in the flux-driven epitaxial growth of nitride single-crystal substrates, the molten metal partially transforms into a gaseous state. This often results in the concentrations of raw materials and flux in the reaction vessel falling below the set values, leading to a decrease in epitaxial crystal quality or even halting growth. Some researchers consider adding additional raw materials before the reaction, but this affects the actual concentrations in the growth environment and presents challenges in estimation.

[0048] This invention adds a molten metal collection and reflux system to the growth system, which can significantly reduce the ineffective loss of raw materials, thereby optimizing the quality and size of the growth substrate and extending the service life of the equipment.

[0049] A metal droplet collection and reflux system for flux-driven growth of nitride single crystals, such as Figure 1 As shown, the system includes: a furnace body 1, a reaction chamber 2, an airflow valve 3, a heating assembly 4, a reaction vessel 5, a condenser 6, a guide rod 7, a lifting mechanism 8, a blower assembly 9, an adjusting bracket 10-1, a stirring mechanism 10-2, and an electrical control system 11. The reaction chamber 2 is located at the lower part of the furnace body 1. The reaction vessel 5 is located in the middle of the reaction chamber 2. The condenser 6 is located at the upper end of the reaction vessel 5, and its height relative to the reaction vessel 5 is adjusted by the lifting mechanism 8. A guide rod 7 is located at the center of the bottom of the condenser 6. The blower assembly 9 is located at the lower end of the reaction vessel 5, and the stirring mechanism 10-2 is located inside the reaction vessel 5. The electrical control system 11 connects the lifting mechanism 8 and the stirring mechanism 10-2, and also controls the operation of the blower assembly 9 and the heating assembly 4.

[0050] In this embodiment, the reaction vessel 5 is a high-temperature resistant vessel. The types of reaction vessel 5 that can be selected include: graphite crucible, quartz crucible, boron nitride crucible, tungsten crucible, etc. Through the action of the heating component 4, the raw materials and additives inside the reaction vessel 5 are converted into molten metal 5-1 and partially volatilize.

[0051] In this embodiment, the heating assembly 4 includes one or more rings of heating assembly 4-1 arranged around the inner wall of the reaction chamber 2, surrounding the growth container, and a container bottom heating assembly 4-2 disposed at the bottom of the reaction container 5. In some embodiments, the heating assembly 4-1 can be selected from existing heating elements such as electric heating tubes and heating elements, and the container bottom heating assembly 4-2 can be selected from existing heating elements such as heating platforms. These are not exhaustively described here, nor are their specific structures detailed.

[0052] In this embodiment, the reaction container 5 is placed in the reaction chamber and then sealed. The reaction container 5 is placed on the heating platform. One or more heating components 4-1 are arranged around the inner wall of the reaction chamber 2 to perform or provide lateral temperature control of the reaction container 5 so that the container is heated evenly. The heating component 4-2 at the bottom of the container is used to provide heating at the bottom of the container to form heat convection and melt temperature gradient.

[0053] In this embodiment, the condenser 6 installed at the upper end of the reaction vessel 5 is used to capture the vaporized metal that escapes in the rising gas flow, and then the vaporized metal is returned to the reaction vessel 5 through the guide rod 7 which is fixedly connected to the condenser 6.

[0054] In this embodiment, the condenser 6 is an inverted bucket-shaped condenser.

[0055] Specifically, the condenser 6 includes a condenser housing 6-1 and a built-in temperature control component 6-2. The electronic control system 11 includes a speed controller 11-1 and a temperature controller 11-2, wherein the temperature control component 6-2 and the temperature controller 11-2 are connected by a connecting cable. The connecting cable between the built-in temperature control component 6-2 and the temperature controller 11-2 has a certain degree of redundancy to accommodate the maximum descent height of the condenser 6.

[0056] As a preferred embodiment, the maximum diameter of the condenser shell 6-1 is matched with the inner diameter of the reaction chamber 2 to ensure better condensation effect. The built-in temperature control component 6-2 is fixedly connected to the inner wall of the condenser shell 6-1 and is distributed circumferentially along the shell.

[0057] In this embodiment, the temperature control component 6-2 can be selected from existing heating elements such as heating tubes or heating wires, which will not be described in detail or listed here.

[0058] In this embodiment, the relative positions of the condenser 6 and the reaction vessel 5 can also be adjusted by the lifting mechanism 8. After the gaseous metal in the gas flow fully releases heat to the inverted funnel-shaped cover, it condenses. The metal droplets flow back along the condenser shell 6-1 and the guide rod 7 under the action of gravity. The unliquefied gaseous metal repeatedly contacts the condenser 6 along the internal circulation, further collecting the volatile reaction substances.

[0059] In this embodiment, the condenser shell 6-1 can be made of materials such as boron nitride, platinum, rhodium, and tungsten. The selected material should take into full consideration whether it will introduce impurity elements.

[0060] The reaction vessel 5 is also equipped with a stirring paddle 10-2. The stirring paddle 10-2 drives the melt to rotate through the speed controller 11-1, thereby accelerating the uniform distribution of raw material concentration. The blower 9 is located at the bottom of the vessel 5. The airflow valve 3 can be connected to the atmosphere system and the vacuum system (not shown in the figure). The adjusting bracket 10-1 is connected to the speed controller 11-1 and the stirring paddle 10-2. The adjusting bracket 10-1 can adjust the height of the stirring paddle 10-2 to change the depth of the stirring paddle 10-2 in the reaction vessel 5.

[0061] In this embodiment, the reaction chamber includes a heat insulation layer 2 and a padding layer 12. The heat insulation layer 2 should completely cover the walls and top and bottom areas of the reaction chamber. It can be made of micro-nano heat insulation materials such as aerogel or a vacuum interlayer to prevent rapid heat transfer between the internal high-temperature chamber and the external furnace body, while reducing the interference of convection on the directional transmission of airflow within the furnace chamber. The padding layer 12 has built-in thermocouples and pressure sensors to support the heating platform while providing feedback on the actual temperature and pressure within the chamber.

[0062] In this embodiment, the blower assembly 9 is disposed on the upper side of the pad layer 12 and located below the bottom heating assembly 4-2 of the container. The diameter of the blower assembly 9 matches the bottom diameter of the reaction chamber 2 to prevent molten metal droplets from seeping into the pad layer area and contaminating the device.

[0063] In this embodiment, the blower assembly 9 includes one or more impellers, and the rotation speed is adjusted to achieve a stable flow from the bottom of the reaction chamber to the surface of the condenser shell 6-1, so as to directionally transport the volatilized gaseous metal.

[0064] In this embodiment, the lifting mechanism 8 includes a rotary motor 8-1 and traction lines 8-2. The condenser is fixed to the rotary motor 8-1 via at least two traction lines 8-2. The rotary motor 8-1 drives relative movement between the condenser and the reaction vessel 5. The traction lines 8-2 can be made of platinum, nickel, or other high-temperature resistant composite materials to avoid fatigue fracture caused by continuous operation of the traction wires.

[0065] In this embodiment, at least a portion of the electronic control system 11 and the lifting mechanism 8 are separately housed within a cavity to ensure the safety of the electronic control system and the lifting mechanism.

[0066] Of course, in other embodiments, a partition can also be provided between the electronic control system 11 and the reaction chamber 2 to reduce the impact of airflow on the electronic control system 11.

[0067] Specifically, the stirring mechanism includes a movable support 10-1 and a stirring paddle 10-2. By adjusting the fixing mechanism of the support 10-1 and its depth in the reaction vessel 5, and by controlling the speed of the stirring paddle 10-2 through the speed controller 11-1, the low-temperature reflux metal droplets are quickly and fully mixed with the molten metal, thus avoiding the deterioration of the growth crystal quality and the generation of polycrystalline material caused by local oversaturation when the supercooled droplets contact the epitaxial surface.

[0068] Example 2

[0069] A metal droplet collection and reflux system for growing nitride single crystals using a flux method is described. The furnace structure and most functions of the funnel-shaped condenser are similar to those of the inverted bucket-shaped condensation and reflux system shown in Example 1. The same functional units will not be repeated. Only the modified parts will be explained. If any components appear repeatedly in the device during the description, the markings in Example 1 will be used.

[0070] The main difference between this embodiment and the previous embodiments is that a funnel-shaped condenser 14 is used. The funnel-shaped condenser 14 includes an upper arc-shaped condenser cover 14-1 and a lower temperature-regulating funnel 14-2. The arc-shaped condenser cover 14-1 is fixedly connected to at least two traction lines 8-2 and can be driven by a rotary motor 8-1 to move relative to the reaction vessel 5. The maximum diameter of the arc-shaped condenser cover 14-1 matches the inner diameter of the reaction chamber 2 to prevent metal vapor from condensing and adhering on the upper part of the condenser cover, thus increasing the working pressure of the lifting mechanism. The outer diameter of the temperature-regulating funnel 14-2 should be smaller than the outer diameter of the arc-shaped cover to facilitate sufficient contact between the rising airflow and the upper condenser cover, achieving a better droplet collection effect.

[0071] Specifically, the lower temperature-regulating funnel can be adjusted in relative height within the chamber 2 using one or more methods, such as the lifting mechanism 8 and the movable support 13. When using a funnel-shaped condensation system, liquefied metal droplets can be collected and refluxed without adhering to the funnel-shaped sidewall structure. By clamping and fixing the temperature-regulating funnel 14-2 with the movable support 13, the aging problem of the attached metal on the support can be ignored, while also fixing the condenser.

[0072] Whether the upper arc-shaped condenser cap 14-1 and the lower temperature-regulating funnel 14-2 are fixedly connected is not strictly specified here. The change in the relative distance between the condenser cap and the funnel has not shown a significant impact in practical applications. The temperature control ranges required by the condenser cap 14-1 and the temperature-regulating funnel 14-2 overlap significantly, and can be controlled by the same electronic control system 11.

[0073] In this embodiment, the surface material of the condenser 14 can be selected from boron nitride, platinum, rhodium, tungsten, etc. The selected material should take into full consideration whether it will introduce impurity elements.

[0074] In this embodiment, as Figure 3 As shown, the temperature-controlled funnel 14-2 has a uniformly distributed cooling component inside. During operation, the temperature control component is set by the electronic control system to always be slightly higher than the melting point of the molten metal, so as to prevent the molten metal droplets from solidifying due to heat conduction with the funnel wall during the reflux process, which would cause the funnel opening to become blocked and lose its reflux function.

[0075] Specifically, the refrigeration components include metal heat-conducting coils, coolant pipes, etc.

[0076] Of course, it is not limited to the above embodiments. The shape or structure of each component can be adjusted or changed. For example, the condenser can also be designed as an inverted cone structure, and the lifting mechanism can be a structure of several telescopic rods. One end of the telescopic rod is fixed to the upper wall of the reaction chamber, and the other end is fixed to the upper end of the condenser, as long as it does not interfere with the reflux operation of the lower end face of the condenser.

[0077] Similarly, all components of the electronic control system can use existing technologies or be replaced with other existing technologies, and the control programs of all components of the electronic control system can use existing technologies, which will not be elaborated or exhaustively listed here.

[0078] The above-mentioned substitutions or adjustments are all things that can be easily conceived by those skilled in the art, and should therefore fall within the protection scope of this utility model.

[0079] Example 3

[0080] The method of using the metal droplet collection and reflux system for flux-grown nitride single crystals provided in Example 1 or Example 2 includes the following steps:

[0081] S1. Add gallium metal (4N purity) and sodium (or calcium, etc.) metal (4N purity) to reaction vessel 5 in a molar ratio of 20 / 80 to 40 / 60, and then add an appropriate amount of nitrided carbon powder. Then, in an anhydrous and oxygen-free environment, load chamber 2, and repeatedly pump and fill it with nitrogen (or argon, etc.) at a pressure of 3 to 10 MPa through gas flow valve 3. Turn on the heating components and set the growth temperature to 600 to 1000°C, and turn on the blower assembly 9.

[0082] S2. After the raw materials have fully melted, adjust the relative height of the stirring mechanism 10 and the condenser in the cavity as needed, and open the condenser 6. During the growth process, the volatilized gaseous metal reaches the outer wall of the condenser 6 with the rising airflow, liquefies, and flows back along the outer wall and the guide rod 7.

[0083] S3. After growth is complete, first turn off the heating components. When the temperature inside the chamber returns to room temperature, turn off the blower and condenser, open the airflow valve 3 to balance the air pressure inside and outside the furnace, and then open the furnace body to take out the container 5.

[0084] Of course, the above embodiments are merely exemplary, and the types of reactants, reaction temperature, and other parameters in the reaction vessel can be adjusted as needed.

[0085] The above description is merely a preferred embodiment of this utility model and is not intended to limit the scope of this utility model. Various modifications and variations can be made to this utility model by those skilled in the art. Any modifications, equivalent substitutions, or improvements made by those skilled in the art without creative effort within the spirit and principles of this utility model should be included within the protection scope of this utility model.

Claims

1. A metal droplet collection and reflux system for growing nitride single crystals using a flux method, characterized in that, The furnace body, the reaction chamber, the heating assembly, the reaction container, the condenser, the lifting mechanism, the air blowing assembly, the adjusting support, the stirring mechanism and the electric control system are included. The lower part of the furnace body is provided with a reaction chamber, and the reaction chamber is provided with a reaction container for carrying metal melt and seed crystal. The upper end of the reaction chamber is connected with a condenser through a lifting mechanism, and the bottom of the condenser is provided with a drainage component. The reaction chamber is provided with an adjusting support, and the adjusting support is provided with a stirring mechanism. The electric control system is connected with the lifting mechanism, the air blowing assembly, the adjusting support and the stirring mechanism to control the corresponding mechanisms to act.

2. A metal droplet collection and reflow system for flux method growth of a nitride single crystal as claimed in claim 1, wherein The furnace body further has a second cavity for accommodating the electric control system and the lifting mechanism.

3. A liquid metal droplet collection and reflow system for flux method growth of a nitride single crystal as claimed in claim 1 or 2, wherein The lifting mechanism includes a plurality of symmetrical rotary motors and a liftable support, each rotary motor is connected with a traction line, and each traction line is connected with the upper end of the condenser.

4. A liquid metal droplet collection and reflow system for flux method growth of a nitride single crystal as claimed in claim 1 or 2, wherein The upper end of the condenser is connected with the lifting mechanism, the diameter of the lower end of the condenser gradually decreases, and the drainage component is arranged at the center position of the lower end of the condenser.

5. A liquid metal droplet collection and reflow system for flux method growth of a nitride single crystal as claimed in claim 1 or 2, wherein The condenser has an outer shell, and a temperature control assembly is arranged in the inner shell. The maximum diameter of the outer shell of the condenser matches the inner diameter of the reaction chamber.

6. A metal droplet collection and reflow system for flux method growth of a nitride single crystal as claimed in claim 5, wherein The temperature control assembly is a metal heat-conducting coil or a cooling liquid pipe.

7. A liquid metal droplet collection and reflow system for flux method growth of a nitride single crystal as claimed in claim 1, wherein The upper part of the reaction chamber is provided with an air flow valve.

8. A liquid metal droplet collection and reflow system for flux method growth of a nitride single crystal as claimed in claim 1, wherein The heating assembly includes a heating assembly arranged on the inner wall of the reaction chamber and a heating assembly arranged at the lower end of the reaction container.

9. A liquid metal droplet collection and reflow system for flux method growth of a nitride single crystal as claimed in claim 1, wherein The reaction chamber includes a heat insulation layer and a cushion layer.

10. A metal droplet collection and reflow system for flux method growth of a nitride single crystal as claimed in claim 9, wherein The air blowing assembly is arranged in the heat insulation layer, and the diameter of the air blowing assembly matches the diameter of the bottom of the reaction chamber.

Images