Sintering infrared temperature sensing system for solar cell experiment

Abstract

The utility model discloses a sintering infrared temperature sensing system for solar cell experiments, which is applied to a metallization sintering furnace, and a plurality of infrared temperature sensors are arranged in the metallization sintering furnace. A drying section, a sintering section, a radiation preheating section and an irradiation section are sequentially arranged in the metallization sintering furnace in the silicon wafer conveying direction. The drying section, the sintering section, the radiation preheating section and the irradiation section are each provided with a plurality of temperature zones, each temperature zone is internally provided with at least one infrared temperature sensor, and the infrared temperature sensors are used for detecting the temperature in the current temperature zone in real time; the infrared temperature sensor is electrically connected with a display unit, and the display unit displays temperature data of the infrared temperature sensor in real time; by arranging a plurality of infrared temperature sensors in different temperature zones, detection and temperature control in different temperature zones can be realized, and the infrared temperature sensor has the advantages of short response time, non-contact, safety in use and the like.

Description

Technical Field

[0001] This utility model relates to the field of temperature detection technology, specifically to a sintering infrared temperature sensing system for solar cell experiments. Background Technology

[0002] During the experimental fabrication of solar cells, the sintering curve is currently monitored using an external furnace temperature gauge. However, this method has two major drawbacks: First, it cannot achieve real-time monitoring, as fluctuations in ambient temperature directly affect furnace temperature variations, leading to efficiency fluctuations. Second, the external furnace temperature gauge is prone to damage after prolonged use within the furnace, and the need to replace thermocouples can result in discrepancies in the monitored temperature values. Both of these factors increase the inaccuracy of the experimental results. Utility Model Content

[0003] The purpose of this invention is to provide a sintered infrared temperature sensing system for solar cell experiments, in order to solve the problems in the prior art.

[0004] To achieve the above objectives, the technical solution adopted by this utility model is: a sintering infrared temperature sensing system for solar cell experiments, applied to a metallization sintering furnace, wherein a number of infrared temperature sensors are installed inside the metallization sintering furnace;

[0005] The metallization sintering furnace is equipped with a drying section, a sintering section, a radiation preheating section and an irradiation section arranged sequentially along the silicon wafer transport direction.

[0006] The drying section, sintering section, radiation preheating section and irradiation section are each equipped with multiple temperature zones, and each temperature zone is equipped with at least one infrared temperature sensor, which is used to detect the temperature in the current temperature zone in real time.

[0007] The infrared thermometer is electrically connected to a display unit, which displays the temperature data of the infrared thermometer in real time.

[0008] In one preferred embodiment, the device further includes a high-temperature infrared emission testing device, which corresponds one-to-one with the infrared temperature sensor and is connected to the infrared temperature sensor.

[0009] In one preferred embodiment, the high-temperature resistance range of the high-temperature infrared emission testing device is 600℃-1000℃.

[0010] In one preferred embodiment, the system further includes a monitoring unit electrically connected to a display unit. The monitoring unit is used to monitor temperature changes and sintering curves in all temperature zones during the production period.

[0011] In one preferred embodiment, the system further includes a control unit electrically connected to the monitoring unit. The control unit dynamically adjusts the temperature in different temperature zones based on the analysis of temperature change information and sintering curves in all temperature zones.

[0012] In one preferred embodiment, a sintering lamp is provided inside the metallization sintering furnace, and the infrared temperature sensor is located in the middle of the sintering lamp.

[0013] Due to the application of the above technical solution, the beneficial effects of this application compared with the prior art are as follows:

[0014] This application discloses a sintering infrared temperature sensing system for solar cell experiments. The system uses an infrared temperature sensor to focus the infrared radiation energy of a target object. This energy is then focused onto a high-temperature resistant infrared emission testing device and converted into a corresponding electrical signal. The electrical signal is processed by an amplifier and signal processing circuit, and after being corrected by the instrument's internal algorithm and target emissivity, it is finally converted into the temperature value of the target being measured. By setting multiple infrared temperature sensors in different temperature zones, temperature zone detection and temperature control can be achieved. This system offers advantages such as fast response time, non-contact operation, and safe use. Attached Figure Description

[0015] To more clearly illustrate the specific embodiments of this utility model or the technical solutions in the prior art, the accompanying drawings used in the description of the specific embodiments or the prior art will be briefly introduced below.

[0016] Obviously, the accompanying drawings described below are some embodiments of this utility model. For those skilled in the art, they can obtain [further details] from these drawings without any creative effort.

[0017] Other attached figures.

[0018] Figure 1 This is a schematic cross-sectional view of the metallization sintering furnace for the experimental sintering infrared temperature sensing system for solar cells of this utility model.

[0019] In the diagram: 1. Metallization sintering furnace, 2. Furnace outlet, 3. Irradiation section, 4. Radiation preheating section, 5. Sintering section, 6. Drying section, 7. Furnace inlet, 8. Infrared thermometer, 9. High-temperature infrared emission testing device, 10. Temperature zone, 11. Sintering lamp. Detailed Implementation

[0020] To enable those skilled in the art to better understand the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present application, and not all embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative effort should fall within the scope of protection of the present application.

[0021] It should be noted that the terms "first," "second," etc., in the specification, claims, and accompanying drawings of this application are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that such data can be interchanged where appropriate for the embodiments of this application described herein. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion; for example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0022] In this application, the terms "upper," "lower," "left," "right," "front," "rear," "top," "bottom," "inner," "outer," "middle," "vertical," "horizontal," "lateral," and "longitudinal" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. These terms are primarily for the purpose of better describing the present invention and its embodiments, and are not intended to limit the indicated device, element, or component to having a specific orientation, or to be constructed and operated in a specific orientation.

[0023] Furthermore, in addition to indicating direction or positional relationship, some of the aforementioned terms may also have other meanings. For example, the term "above" may also be used in some cases to indicate a certain dependency or connection relationship. Those skilled in the art can understand the specific meaning of these terms in this utility model according to the specific circumstances.

[0024] Furthermore, the terms "installation," "setup," "equipped with," "connection," "linking," and "socketing" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral structure; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium, or an internal connection between two devices, components, or parts. Those skilled in the art can understand the specific meaning of these terms in this utility model based on the specific circumstances.

[0025] It should be noted that, unless otherwise specified, the embodiments and features described in this application can be combined with each other. This application will now be described in detail with reference to the accompanying drawings and embodiments.

[0026] Example 1

[0027] Figure 1 This utility model provides a solar cell experimental sintering infrared temperature sensing system, which is applied to a metallization sintering furnace 1. The metallization sintering furnace 1 is equipped with several infrared temperature sensors 8. One end of the metallization sintering furnace 1 is provided with an inlet 7, and the other end is provided with an outlet 2. The silicon wafer is transported along the direction from the inlet 7 to the outlet 2.

[0028] The metallization sintering furnace 1 is arranged in sequence along the silicon wafer transport direction, including a drying section 6, a sintering section 5, a radiation preheating section 4, and an irradiation section 3.

[0029] The drying section 6, sintering section 5, radiation preheating section 4 and irradiation section 3 are each equipped with multiple temperature zones 10. Each temperature zone 10 is equipped with at least one infrared temperature sensor 8, which is used to detect the temperature in the current temperature zone 10 in real time.

[0030] The infrared temperature sensor 8 is electrically connected to a display unit, which displays the temperature data of the infrared temperature sensor 8 in real time.

[0031] It should be noted that the drying section 6 includes 6 temperature zones 10, the sintering section 5 includes 12 temperature zones 10, the radiation preheating section 4 includes 6 temperature zones 10, and the irradiation section 3 includes 9 temperature zones 10.

[0032] According to the embodiments of this utility model, it also includes a high-temperature resistant infrared emission testing device 9, which corresponds one-to-one with the infrared temperature sensor 8, and the high-temperature resistant infrared emission testing device is connected to the infrared temperature sensor 8.

[0033] According to the embodiments of this utility model, the high-temperature resistance zone 10 of the high-temperature infrared emission testing device 9 is 600℃-1000℃.

[0034] According to an embodiment of the present invention, a monitoring unit is also included. The monitoring unit is electrically connected to the display unit and is used to monitor the temperature change information and sintering curves in all temperature zones 10 during the production period.

[0035] According to an embodiment of the present invention, it further includes a control unit, which is electrically connected to the monitoring unit. The control unit dynamically adjusts the temperature in different temperature zones 10 based on the analysis of temperature change information and sintering curves in all temperature zones 10.

[0036] Specifically, when the wafer source enters each temperature zone 10 of the sintering furnace, the temperature generated on the silicon wafer can be fed back by the high-temperature resistant infrared emission testing device 9, thereby more effectively monitoring the temperature curve changes during that period. At the same time, it also provides more convenient and effective adjustment and monitoring for subsequent wire mesh segment auxiliary material experiment matching and front-end process matching.

[0037] According to an embodiment of the present invention, a sintering lamp tube 11 is provided inside the metallization sintering furnace 1, and an infrared temperature sensor 8 is located in the middle of the sintering lamp tube 11.

[0038] Specifically, infrared temperature sensors 8 are installed in different sintering upper and lower temperature zones 10 and light injection upper and lower temperature zones 10 of the metallization sintering furnace 1. A high-temperature resistant infrared emission testing device 9 is installed according to the actual situation (the temperature resistance must reach 600℃-1000℃, and different temperature-resistant devices are installed according to the actual situation of different temperature zones 10). The infrared radiation energy emitted by the object itself is used to detect its temperature. The infrared temperature sensor 8 at the middle position of the sintering lamp tube 11 measures the infrared radiation energy emitted by the battery cell object, and its actual temperature can be calculated. The signal circuit of the temperature sensor is then processed and fed back to the monitoring system to complete real-time monitoring. The sintering curve is effectively monitored through the main menu interface of the sintering furnace itself. The monitoring of efficiency within the range of 0.05% and the efficiency improvement of auxiliary material experiments and the matching efficiency of the front-end process are maximized.

[0039] In summary, the sintering infrared temperature sensing system for solar cell experiments of this application uses an infrared temperature sensor 8 to focus the infrared radiation energy of the target object. The energy is then focused onto a high-temperature resistant infrared emission testing device 9 and converted into a corresponding electrical signal. The electrical signal is processed by an amplifier and signal processing circuit, and after being corrected by the instrument's internal algorithm and target emissivity, it is finally converted into the temperature value of the target being measured. By setting multiple infrared temperature sensors 8 in different temperature zones 10, temperature zone 10 detection and temperature control can be achieved, which has the advantages of fast response time, non-contact operation, and safe use.

[0040] Finally, it should be noted that the above are merely preferred embodiments of the present utility model and are not intended to limit the present utility model. Although the present utility model has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments or make equivalent substitutions for some of the technical features. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present utility model should be included within the protection scope of the present utility model.

Claims

1. A sintering infrared temperature sensing system for solar cell experiments, applied in a metallization sintering furnace, wherein a plurality of infrared temperature sensors are installed inside the metallization sintering furnace; characterized in that... , The metallization sintering furnace is equipped with a drying section, a sintering section, a radiation preheating section and an irradiation section arranged sequentially along the silicon wafer transport direction. The drying section, sintering section, radiation preheating section and irradiation section are each equipped with multiple temperature zones, and each temperature zone is equipped with at least one infrared temperature sensor, which is used to detect the temperature in the current temperature zone in real time. The infrared thermometer is electrically connected to a display unit, which displays the temperature data of the infrared thermometer in real time.

2. The sintering infrared temperature sensing system for solar cell experiments as described in claim 1, characterized in that: It also includes a high-temperature infrared emission testing device, which corresponds one-to-one with the infrared temperature sensor and is connected to the infrared temperature sensor.

3. The sintering infrared temperature sensing system for solar cell experiments as described in claim 2, characterized in that: The high-temperature resistance range of the high-temperature infrared emission testing device is 600℃-1000℃.

4. The sintering infrared temperature sensing system for solar cell experiments as described in claim 3, characterized in that: It also includes a monitoring unit, which is electrically connected to the display unit. The monitoring unit is used to monitor temperature change information and sintering curves in all temperature zones during the production period.

5. The sintering infrared temperature sensing system for solar cell experiments as described in claim 4, characterized in that: It also includes a control unit, which is electrically connected to the monitoring unit. The control unit dynamically adjusts the temperature in different temperature zones based on the analysis of temperature change information and sintering curves in all temperature zones.

6. The sintering infrared temperature sensing system for solar cell experiments as described in claim 1, characterized in that: The metallization sintering furnace is equipped with sintering lamps, and the infrared temperature sensor is located in the middle of the sintering lamps.

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