Semiconductor ion implantation graphite material raw material impurity removal device

Abstract

The utility model relates to the technical field of graphite materials, in particular to a semiconductor ion implantation graphite material raw material impurity removal device which comprises a box body, a fixing rod is movably installed at the top of the box body, a first fluted disc is installed at the top of the fixing rod, and a spiral conveying rod is installed at the bottom of the fixing rod. Two connecting rods are movably installed at the positions, on the two sides of the fixing rod, of the top of the box body, first movable rods are movably installed on the two sides of the box body correspondingly, second movable rods are movably installed at the positions, below the two first movable rods, of the two sides of the box body correspondingly, and stirring frames are installed at the opposite ends of the two second movable rods correspondingly. The graphite raw material stirring device has the advantages that the graphite raw material is stirred and stirred in the process of heating the graphite raw material in the box body, so that the graphite raw material is uniformly heated, and impurities can be fully removed.

Description

Technical Field

[0001] This utility model relates to the field of graphite material technology, specifically to a device for removing impurities from semiconductor ion-implanted graphite material raw materials. Background Technology

[0002] During conductor ion implantation, graphite raw materials may be contaminated by impurities. In order to remove these impurities, a pre-implantation device is usually used to purify the raw materials. Specifically, a semiconductor ion implantation graphite raw material impurity removal device is usually a device used to purify and clean graphite materials to ensure that higher purity and better quality products are obtained during the ion implantation process.

[0003] When using hot air to heat graphite raw materials to remove impurities, it is generally necessary to stir the graphite raw materials. The main purpose of stirring is to ensure that the graphite material is heated evenly and to prevent local overheating or undercooling. At the same time, stirring also helps to better expose impurities to the heat source, improving their evaporation or decomposition efficiency. Unidirectional stirring is usually more stable, but unidirectional stirring will cause some of the graphite raw materials that are piled up to not be able to fully contact the hot air, resulting in uneven heating and affecting the efficiency of impurity removal. Utility Model Content

[0004] The purpose of this invention is to provide a semiconductor ion implantation graphite material raw material impurity removal device, which has the advantages of turning and stirring the graphite material raw material during the heating process inside the box, so that the graphite material raw material is heated evenly and can fully remove impurities. This solves the problem that the graphite material raw material cannot be fully heated when the impurity removal device heats and mixes the graphite material raw material.

[0005] To achieve the above objectives, this utility model provides the following technical solution: a semiconductor ion implantation graphite material raw material impurity removal device, comprising a housing, a fixed rod movably mounted on the top of the housing, a gear disc mounted on the top of the fixed rod, a spiral conveying rod mounted on the bottom of the fixed rod, two connecting rods movably mounted on the top of the housing on both sides of the fixed rod, movable rod one movably mounted on both sides of the housing, movable rod two movably mounted on both sides of the housing below the two movable rods one, and a stirring rack mounted on one opposite end of each of the two movable rods two.

[0006] When using the semiconductor ion implantation graphite material raw material impurity removal device of this technical solution, the support column provides support to the box body. The graphite material raw material enters the box body through the feed pipe, and hot gas enters the box body through the air inlet pipe. The hot gas heats the graphite material raw material inside the box body, using high-temperature heating to oxidize, decompose, or volatilize organic impurities. The gas inside the box body is discharged from the air outlet pipe at the top. During the heating process, the motor drives the gear disc to rotate through the transmission structure. The gear disc drives the fixed rod to rotate, and the fixed rod drives the spiral conveyor rod inside the box body to rotate. The feeding rod flips the graphite material inside the box upwards. The first gear drive the two second gears to rotate, the two second gears drive the two connecting rods to rotate, the two connecting rods drive the two movable rods to rotate via belts, the two movable rods drive the two third gears to rotate, the two third gears drive the two movable rods to rotate via two fourth gears, the two movable rods drive the two stirring racks to rotate, and the two stirring racks stir the graphite material inside the box, so that the graphite material is fully in contact with the hot air. The graphite material inside the box that has been heated is discharged from the discharge pipe at the bottom.

[0007] Preferably, a feed pipe is embedded in the top of the housing, and a discharge pipe is embedded in the bottom of the housing. Graphite material enters the housing through the feed pipe, and the graphite material inside the housing is discharged through the discharge pipe.

[0008] Preferably, an air inlet pipe is embedded at the bottom of the housing, and a baffle mesh is installed inside the air inlet pipe. An air outlet pipe is embedded at the top of the housing. Hot air enters the housing through the air inlet pipe, and the baffle mesh inside the air inlet pipe prevents graphite material from entering the air inlet pipe. Gas inside the housing can be discharged through the air outlet pipe.

[0009] Preferably, each of the two connecting rods is equipped with a second gear disc, which meshes with the first gear disc. A motor is mounted on the top of the housing, and the motor's transmission structure is fixedly connected to the top of the first gear disc. The motor drives the first gear disc to rotate through the transmission structure, and the first gear disc drives the two second gear discs to rotate.

[0010] Preferably, the two connecting rods are movably connected to the two movable rods via two belts. The two connecting rods drive the two movable rods to rotate via the belts.

[0011] Preferably, a baffle is installed at the top of each of the two movable rods. The baffle prevents the belt from slipping off the movable rod.

[0012] Preferably, each of the two movable rods 1 has a geared disc 3 mounted on its bottom, and each of the two movable rods 2 has a geared disc 4 mounted on its opposite ends. The two geared discs 3 and 4 are meshed together. The two movable rods 1 drive the two geared discs 3 to rotate, and the two geared discs 3 drive the two movable rods 2 to rotate via the two geared discs 4.

[0013] Preferably, a pressure gauge is embedded in the rear side of the enclosure, and an observation window is embedded in the rear side of the enclosure below the pressure gauge. Support pillars are installed at the four corners of the bottom of the enclosure. The pressure gauge allows for monitoring of the internal air pressure, the observation window allows for monitoring of the heating of the graphite material inside the enclosure, and the support pillars provide structural support to the enclosure.

[0014] Compared with the prior art, the beneficial effects of this utility model are:

[0015] This invention utilizes a spiral conveyor and a stirring frame. Hot air heats the graphite material inside the chamber, causing organic impurities to oxidize, decompose, or volatilize due to the high temperature. During heating, a motor drives a geared disc to rotate via a transmission structure. This geared disc rotates a fixed rod, which in turn rotates the spiral conveyor inside the chamber. The spiral conveyor tumbles the graphite material upwards. Geared disc 1 drives two geared discs 2 to rotate, which in turn rotate two connecting rods. These connecting rods, via belts, drive two movable rods 1 to rotate, which in turn rotate two geared discs 3. These geared discs, through two geared discs 4, drive two movable rods 2 to rotate, which in turn rotate two stirring frames. The two stirring frames stir the graphite material inside the chamber, ensuring it is fully in contact with the hot air. This achieves the goal of simultaneously tumbling and stirring the graphite material during heating, resulting in uniform heating and effective removal of impurities. Attached Figure Description

[0016] Figure 1 This is a three-dimensional structural diagram of the present invention from a first angle;

[0017] Figure 2 This is a two-dimensional structural diagram of the present invention from a second angle;

[0018] Figure 3 This is a three-dimensional structural diagram of the present invention from a third angle;

[0019] Figure 4 This is a three-dimensional structural diagram of the present invention from a fourth angle;

[0020] Figure 5 This is a cross-sectional structural diagram of the present invention.

[0021] In the diagram: 1. Support column; 2. Box body; 3. Observation window; 4. Pressure gauge; 5. Movable rod one; 6. Baffle; 7. Belt; 8. Feed pipe; 9. Motor; 10. Air outlet pipe; 11. Gear disc one; 12. Gear disc two; 13. Gear disc three; 14. Gear disc four; 15. Discharge pipe; 16. Air inlet pipe; 17. Barrier net; 18. Movable rod two; 19. Connecting rod; 20. Fixed rod; 21. Screw conveyor rod; 22. Mixing frame. Detailed Implementation

[0022] To make the above-mentioned objectives, features and advantages of this utility model more apparent and understandable, the specific embodiments of this utility model will be described in detail below with reference to the accompanying drawings.

[0023] Many specific details are set forth in the following description in order to provide a full understanding of the present invention. However, the present invention may also be implemented in other ways different from those described herein. Those skilled in the art can make similar extensions without departing from the spirit of the present invention. Therefore, the present invention is not limited to the specific embodiments disclosed below.

[0024] Secondly, this utility model is described in detail with reference to the schematic diagrams. When describing the embodiments of this utility model, for ease of explanation, the cross-sectional views illustrating the device structure may be partially enlarged, not adhering to the usual scale. Furthermore, the schematic diagrams are merely examples and should not limit the scope of protection of this utility model. In addition, actual manufacturing should include the three-dimensional spatial dimensions of length, width, and depth.

[0025] To make the objectives, technical solutions, and advantages of this utility model clearer, the embodiments of this utility model will be described in further detail below with reference to the accompanying drawings. Example

[0026] like Figures 1-5 As shown, this utility model proposes a semiconductor ion implantation graphite material raw material impurity removal device, including a housing 2. A feed pipe 8 is embedded in the top of the housing 2, a discharge pipe 15 is embedded in the bottom of the housing 2, an air inlet pipe 16 is embedded in the bottom of the housing 2, a baffle net 17 is installed inside the air inlet pipe 16, an air outlet pipe 10 is embedded in the top of the housing 2, a fixed rod 20 is movably installed on the top of the housing 2, a gear disc 11 is installed on the top of the fixed rod 20, a spiral conveying rod 21 is installed at the bottom of the fixed rod 20, two connecting rods 19 are movably installed on the top of the housing 2 on both sides of the fixed rod 20, and a gear disc 12 is installed on the top of each connecting rod 19. The two gear discs 12 are meshed with the gear disc 11. The top of the housing 2 is equipped with... There is a motor 9, and the transmission structure of the motor 9 is fixedly connected to the top of the gear plate 11. Movable rods 5 are movably installed on both sides of the box body 2. Two connecting rods 19 are movably connected to the two movable rods 5 through two belts 7. Movable rods 28 are movably installed on both sides of the box body 2 below the two movable rods 15. Gear plates 3 13 are installed at the bottom of the two movable rods 15. Gear plates 4 14 are installed at the opposite ends of the two movable rods 28. The two gear plates 3 13 and the two gear plates 4 14 are meshed and connected. Stirring racks 22 are installed at the opposite ends of the two movable rods 28. A pressure gauge 4 is embedded in the rear side of the box body 2. An observation window 3 is embedded in the rear side of the box body 2 below the pressure gauge 4. Support columns 1 are installed at the four corners of the bottom of the box body 2.

[0027] In this embodiment, the support column 1 provides support to the housing 2. Graphite material enters the housing 2 through the feed pipe 8, and hot air enters the housing 2 through the air inlet pipe 16. The hot air heats the graphite material inside the housing 2, using high-temperature heating to oxidize or decompose organic impurities or volatilize them. The gas inside the housing 2 is discharged through the exhaust pipe 10 at the top. During the heating process, the motor 9 drives the gear disc 11 to rotate through the transmission structure. The gear disc 11 drives the fixed rod 20 to rotate, and the fixed rod 20 drives the spiral conveyor 21 inside the housing 2 to rotate. The spiral conveyor 21 transports the graphite material inside the housing 2. As the cylinder flips upwards, the first gear disc 11 drives the two second gear discs 12 to rotate, which in turn drives the two connecting rods 19 to rotate. The two connecting rods 19 drive the two movable rods 5 to rotate via the belt 7, which in turn drives the two third gear discs 13 to rotate. The two third gear discs 13 drive the two movable rods 18 to rotate via the two fourth gear discs 14, which in turn drives the two stirring racks 22 to rotate. The two stirring racks 22 stir the graphite material inside the chamber 2, ensuring that the graphite material comes into full contact with the hot air. The heated graphite material inside the chamber 2 is then discharged from the discharge pipe 15 at the bottom. Example

[0028] like Figures 1-5 As shown, the present invention proposes a semiconductor ion implantation graphite material raw material impurity removal device. Compared with Embodiment 1, this embodiment further includes: baffle 6, and baffle 6 is installed on the top of both movable rods 5.

[0029] In this embodiment, two baffles 6 are used to prevent the two belts 7 from slipping off the two movable rods 5.

[0030] Finally, it should be noted that the above description is merely a preferred embodiment of this utility model and is not intended to limit the utility model. Although the utility model has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments or make equivalent substitutions for some of the technical features. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this utility model should be included within the protection scope of this utility model.

Claims

1. A semiconductor ion implantation graphite material raw material impurity removal device, comprising a box body (2), characterized in that: A fixed rod (20) is movably installed on the top of the box (2). A toothed disc (11) is installed on the top of the fixed rod (20). A spiral conveying rod (21) is installed at the bottom of the fixed rod (20). Two connecting rods (19) are movably installed on the top of the box (2) on both sides of the fixed rod (20). Movable rods (5) are movably installed on both sides of the box (2). Movable rods (18) are movably installed on both sides of the box (2) below the two movable rods (5). A stirring rack (22) is installed at the opposite end of the two movable rods (18).

2. The device for purifying a semiconductor ion implantation graphite material raw material according to claim 1, characterized in that: The top of the box (2) is fitted with a feed pipe (8), and the bottom of the box (2) is fitted with a discharge pipe (15).

3. The device according to claim 1, characterized in that: An air inlet pipe (16) is embedded in the bottom of the box (2), and a barrier net (17) is installed inside the air inlet pipe (16). An air outlet pipe (10) is embedded in the top of the box (2).

4. The semiconductor ion implantation graphite material raw material impurity removal device according to claim 1, characterized in that: The top of each of the two connecting rods (19) is equipped with a second gear plate (12), and the two second gear plates (12) are meshed with the first gear plate (11). The top of the housing (2) is equipped with a motor (9), and the transmission structure of the motor (9) is fixedly connected to the top of the first gear plate (11).

5. The semiconductor ion implantation graphite material raw material impurity removal device according to claim 1, characterized in that: The two connecting rods (19) are movably connected to the two movable rods (5) via two belts (7).

6. The semiconductor ion implantation graphite material raw material impurity removal device according to claim 5, characterized in that: Both of the movable rods (5) are equipped with baffles (6) at their top.

7. The semiconductor ion implantation graphite material raw material impurity removal device according to claim 1, characterized in that: The bottom of each of the two movable rods (5) is equipped with a toothed disc (13), and the opposite ends of the two movable rods (18) are equipped with a toothed disc (14). The two toothed discs (13) and the two toothed discs (14) are meshed together.

8. The semiconductor ion implantation graphite material raw material impurity removal device according to claim 1, characterized in that: A pressure gauge (4) is embedded in the rear side of the box (2), and an observation window (3) is embedded in the rear side of the box (2) below the pressure gauge (4). Support columns (1) are installed at the four corners of the bottom of the box (2).

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