Scalable power semiconductor module
By using standardized heat sinks and modular frame structures, the problems of poor heat dissipation and scalability of existing power semiconductor modules are solved, achieving efficient heat dissipation and flexible expansion, and reducing production costs.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- SHANGHAI NAVIG SEMICON TECH CO LTD
- Filing Date
- 2025-04-02
- Publication Date
- 2026-04-28
AI Technical Summary
Existing power semiconductor modules suffer from high customization requirements, poor heat dissipation performance, high production costs, and poor scalability, resulting in a lack of versatility and flexibility in design.
It adopts standardized heat sinks, standard power units and modular frame structure. The modules are directly pressed together through mounting holes and through holes with fasteners, avoiding the use of additional substrates. The standard power units can be flexibly expanded to meet different power and voltage requirements.
It improves the module's heat dissipation efficiency and current carrying capacity, reduces production costs, enhances scalability and development efficiency, and reduces material waste.
Smart Images
Figure CN224178590U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of semiconductor technology, and in particular to a scalable power semiconductor module. Background Technology
[0002] With the development of power electronics technology, power semiconductor modules are widely used in fields such as frequency converters, electric vehicles, and wind power generation; however, existing power semiconductor modules often have the following defects.
[0003] First, there is a high degree of customization required; power semiconductor modules with different power and voltage levels often require different designs, and these designs lack versatility and scalability, requiring a lot of customized design work.
[0004] Second, poor heat dissipation performance; the power semiconductor chips in the power semiconductor module generate a lot of heat during operation, but the existing power semiconductor modules have limited heat dissipation design, which leads to overheating of the module and affects working efficiency and reliability.
[0005] Third, production costs are high; existing power semiconductor modules have high customization requirements, low material versatility, and complex production processes, resulting in high production costs.
[0006] Fourth, poor scalability; existing power semiconductor modules cannot be flexibly expanded according to different power and voltage requirements, which makes it difficult for the system to be upgraded and expanded.
[0007] Therefore, providing a standardized unit structure and a modular framework structure to facilitate flexible expansion according to actual needs is a technical problem that urgently needs to be solved by those skilled in the art.
[0008] It should be noted that the above introduction to the technical background is only for the purpose of providing a clear and complete explanation of the technical solutions of this application and facilitating understanding by those skilled in the art. It should not be assumed that these technical solutions are known to those skilled in the art simply because they have been described in the background section of this application. Utility Model Content
[0009] In view of the shortcomings of the prior art described above, the purpose of this utility model is to provide a scalable power semiconductor module that solves the problems of poor heat dissipation and poor scalability in the prior art.
[0010] To achieve the above and other related objectives, this utility model provides a scalable power semiconductor module, comprising:
[0011] A radiator includes at least one set of mounting holes disposed on the mounting surface of the radiator, wherein the at least one set of mounting holes divides the mounting surface of the radiator into at least one unit mounting area;
[0012] At least one standard power unit is disposed on the unit mounting area, including a housing and a power structure encapsulated in the housing;
[0013] A modular frame includes at least one frame unit, wherein the frame unit includes an insulating frame and a set of through holes disposed on the insulating frame, the insulating frame is disposed on the edge of the housing of the standard power unit, and the through holes are correspondingly disposed with the mounting holes;
[0014] At least one set of fasteners, used in conjunction with the through hole and the mounting hole, to press the standard power unit directly onto the mounting surface of the radiator via the frame unit.
[0015] Optionally, the heat sink includes multiple sets of mounting holes, wherein the multiple sets of mounting holes are arranged in an array on the entire mounting surface of the heat sink, and each set of mounting holes corresponds to a unit mounting area; the number of unit mounting areas is greater than or equal to the number of standard power units, and the number of standard power units is equal to the number of frame units, wherein the selected unit mounting area, the standard power unit, and the frame unit correspond one-to-one.
[0016] Optionally, a set of mounting holes may have four mounting holes, which are respectively located at the four corners of the unit mounting area, wherein two adjacent unit mounting areas share two mounting holes.
[0017] Optionally, the housing includes:
[0018] The top housing is provided with a plurality of outlet holes, wherein the insulating frame is disposed on the outside of the outlet holes on the top housing;
[0019] A side housing is disposed around the top housing, wherein the bottom end of the side housing is flush with the bottom end of the power structure.
[0020] Optionally, the outlet holes are arranged in an array on the top housing.
[0021] Optionally, the power structure includes:
[0022] Insulating substrate;
[0023] At least one power chip is disposed on the insulating substrate through a solder layer, wherein the lead-out terminals of the power chip are electrically led out through the lead-out holes via pins.
[0024] Optionally, when the number of power chips is greater than one, the power chips are electrically connected in parallel and / or in series.
[0025] Optionally, the insulating substrate includes an insulating layer, a first metal layer disposed on the insulating layer, and a second metal layer disposed below the insulating layer, wherein the pin is disposed on the first metal layer and electrically connected to the lead-out terminal of the power chip via a bonding wire.
[0026] Optionally, the modular frame includes multiple frame units, which are arranged in an array; by cutting the modular frame, the number of frame units is adapted to the number of standard power units.
[0027] Optionally, the length of the standard power unit is between 15mm and 50mm, the width is between 15mm and 50mm, and the height is between 5mm and 20mm; the length, width, and height of the frame unit correspond to and match the length, width, and height of the standard power unit.
[0028] As described above, the scalable power semiconductor module of this invention has the following beneficial effects:
[0029] It has good heat dissipation performance. By directly pressing the standard power unit onto the mounting surface of the heat sink, the use of an additional mounting base plate is avoided, which helps to improve the heat dissipation efficiency and current carrying capacity of the module.
[0030] It has good scalability. Both the power unit and the mounting frame are standardized components. The power unit can be adapted to different power and voltage levels by changing the number of chips, the series and parallel connection method, and the chip specifications. The mounting frame can be arbitrarily cut according to the number and shape of the power unit based on the requirements, which enhances scalability.
[0031] The production cost is low. Through the standardized design of power units and frame units, mass production can be achieved. The cost-effectiveness can be improved by leveraging economies of scale. In addition, the increased versatility of materials reduces the waste of raw materials, which is conducive to further reducing production costs.
[0032] Short development cycles and standardized designs help improve development efficiency and shorten the development cycle. Attached Figure Description
[0033] Figure 1 The diagram shown is a structural schematic of an expandable power semiconductor module in an embodiment of this utility model.
[0034] Figure 2 The diagram shown is a structural schematic of the radiator in an embodiment of this utility model.
[0035] Figure 3 The diagram shows a structural schematic of a mounting area for a unit formed by mounting holes on the mounting surface, as shown in an embodiment of this utility model.
[0036] Figure 4 The diagram shown is a structural schematic of a standard power unit in an embodiment of this utility model.
[0037] Figure 5 The diagram shown is a schematic diagram of the structure of the top shell having an outlet hole in an embodiment of this utility model.
[0038] Figure 6 The diagram shown is a structural schematic of the modular frame in an embodiment of this utility model.
[0039] Figure 7 This is a circuit diagram of a three-phase inverter.
[0040] Figure 8 The illustration shows the assembly and construction of a power semiconductor module according to an embodiment of this utility model. Figure 7 The diagram shows a schematic of a three-phase inverter.
[0041] Component designation explanation
[0042] 10 Scalable power semiconductor modules
[0043] 100 radiator
[0044] 110 mounting surface
[0045] 120 Heatsink
[0046] 130 mounting holes
[0047] 140 Unit Installation Area
[0048] 200 standard power units
[0049] 210 casing
[0050] 211 top shell
[0051] 212 Outlet hole
[0052] 213 Side shell
[0053] 220 power structure
[0054] 221 Insulating substrate
[0055] 221a Insulation Layer
[0056] 221b First Metal Layer
[0057] 221c Second Metal Layer
[0058] 222 Weld layer
[0059] 223 Power Chip
[0060] 224 bond wire
[0061] 225 pins
[0062] 230 Molding layer
[0063] 300 Modular Framework
[0064] 310 Frame Unit
[0065] 311 Insulation Frame
[0066] 312 Through Hole
[0067] 400 fastener Detailed Implementation
[0068] The following specific examples illustrate the implementation of this utility model. Those skilled in the art can easily understand other advantages and effects of this utility model from the content disclosed in this specification. This utility model can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of this utility model.
[0069] Please see Figures 1 to 8 It should be understood that the structures, proportions, sizes, etc., illustrated in the accompanying drawings are merely for illustrative purposes to aid those skilled in the art and are not intended to limit the scope of this invention. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in proportions, or adjustments to size, without affecting the effectiveness and purpose of this invention, should still fall within the scope of the disclosed technical content. Furthermore, the terms "upper," "lower," "left," "right," "middle," and "one" used in this specification are merely for clarity and not intended to limit the scope of this invention. Changes or adjustments to their relative relationships, without substantially altering the technical content, should also be considered within the scope of this invention.
[0070] like Figures 1 to 6 As shown, this embodiment provides an expandable power semiconductor module 10, including a heat sink 100, at least one standard power unit 200, a modular frame 300, and at least one set of fasteners 400.
[0071] Combination Figure 1 And see Figure 2 and Figure 3The heat sink 100 includes a mounting surface 110, a heat sink body 120, and at least one set of mounting holes 130. The heat sink body 120 is located below the mounting surface 110. The two can be manufactured as a single piece or as separate parts, without much restriction. At least one set of mounting holes 130 is located on the mounting surface 110 and is achieved by directly drilling threaded holes on the mounting surface 110.
[0072] In this embodiment, at least one set of mounting holes 130 divides the mounting surface 110 into at least one unit mounting area 140 for placing a standard power unit 200, such as... Figure 3 As shown. In practical applications, the heat sink 100 typically includes multiple sets of mounting holes 130, which are arranged in an array on the entire mounting surface 110 of the heat sink 100, and each set of mounting holes 130 corresponds to a unit mounting area 140. In one embodiment, a set of mounting holes 130 contains four holes, which are respectively located at the four corners of the unit mounting area 140, wherein two adjacent unit mounting areas 140 share two mounting holes 130. By providing multiple unit mounting areas 140 on the entire mounting surface 110 of the heat sink 100, the number of standard power units 200 can be flexibly set according to requirements, enhancing the scalability of the module.
[0073] Combination Figure 1 And see Figure 4 and Figure 5 A standard power unit 200 is disposed on the unit mounting area 140, including a housing 210, a power structure 220 and a molding layer 230. The power structure 220 is molded in the housing 210 by the molding layer 230, so as to protect the power structure 220 by means of the housing 210, thereby ensuring the electrical safety of the module.
[0074] In one example, such as Figure 4 As shown, the outer casing 210 includes a top casing 211, a plurality of outlet holes 212, and a side casing 213. The plurality of outlet holes 212 are disposed on the top casing 211, and are achieved by directly opening holes in the top casing 211; in one embodiment, as... Figure 5 As shown, a plurality of lead-out holes 212 are arranged in an array on the top housing 211 to accommodate different pin designs in the power structure 220. Side housings 213 are disposed around the top housing 211, and the two are integrally formed. The bottom end of the side housing 213 is flush with the bottom end of the power structure 220. By exposing the bottom end of the power structure 220, the power structure 220 can directly contact the mounting surface 110 of the heat sink 100, avoiding the use of an additional mounting substrate, improving the module's thermal conductivity, thereby improving the module's heat dissipation performance and significantly enhancing the module's heat dissipation efficiency and current carrying capacity.
[0075] In one example, such as Figure 4 As shown, the power structure 220 includes an insulating substrate 221, a bonding layer 222, at least one power chip 223, bonding wires 224, and pins 225. The insulating substrate 221 includes an insulating layer 221a, a first metal layer 221b, and a second metal layer 221c. The first metal layer 221b is disposed above the insulating layer 221a, and the second metal layer 221c is disposed below the insulating layer 221a. In practical applications, the first metal layer 221b can be etched according to specific requirements. In one embodiment, the insulating substrate 221 is a double-sided copper-clad ceramic substrate, that is, the insulating layer 221a is a ceramic substrate, and the first metal layer 221b and the second metal layer 221c are copper layers. The power chip 223 is disposed on the insulating substrate 221 via a bonding layer 222. In practical applications, the number of power chips 223 can be one or more than one. When the number of power chips 223 is greater than one, the types of the power chips 223 can be the same or different, depending on the actual requirements. For example, Figure 4 The diagram shows two power chips 223, with an IGBT on the right and a diode on the left. The power chips 223 can be electrically connected in parallel, in series, or a combination of both. The specific connection method should be designed according to actual needs. For example, parallel connection is used to achieve high current, series connection is used to achieve high voltage, and a combination of parallel and series connection is used to achieve both high current and high voltage simultaneously. The leads of the power chips 223 are electrically led out through pins 225 and through lead-out holes 212. In one embodiment, pins 225 are disposed on the first metal layer 221b and electrically connected to the leads of the power chips 223 via bonding wires 224. Of course, the electrical connections between the power chips 223 are also achieved through bonding wires 224.
[0076] In this embodiment, the standard power unit 200 can be designed with varying numbers and series / parallel connections of power chips 223 based on different requirements. It can also replace power chips 223 of different specifications to adapt to various power and voltage levels, allowing for flexible module expansion. Furthermore, to achieve standardization, the standard power unit 200 also has standard dimensions; in one embodiment, the length of the standard power unit 200 is between 15mm and 50mm (including both endpoints), the width is between 15mm and 50mm (including both endpoints), and the height is between 5mm and 20mm (including both endpoints).
[0077] In practical applications, when standard power units 200 are set on the unit mounting area 140 of the heat sink 100, the number of standard power units 200 can be less than the number of unit mounting areas 140. Of course, the number of standard power units 200 can also be equal to the number of unit mounting areas 140. The specific number of standard power units 200 should be determined by actual needs, and there are no restrictions on this. However, regardless of the number of standard power units 200, when they are set on the unit mounting area 140, one standard power unit 200 is set for each unit mounting area 140. That is, the selected unit mounting area 140 corresponds one-to-one with the standard power unit 200.
[0078] Combination Figure 1 And see Figure 6 The modular frame 300 includes at least one frame unit 310. Specifically, the frame unit 310 includes an insulating frame 311 and a set of through holes 312; wherein: the insulating frame 311 is disposed on the edge of the outer shell 210 of the standard power unit 200, and in one embodiment, the insulating frame 311 is disposed outside the lead-out hole 212 on the top shell 211; the through holes 312 are disposed on the insulating frame 311, and are realized by directly drilling threaded holes on the insulating frame 311, wherein the through holes 312 are correspondingly disposed with the mounting holes 130 to facilitate the assembly of the fastener 400.
[0079] In practical applications, the modular frame 300 typically includes multiple frame units 310, which are arranged in an array. In specific use, the modular frame 300 is cut to obtain a specific number of frame units 310 according to actual needs, so that the number of frame units 310 matches the number of standard power units 200; that is, the number of frame units 310 equals the number of standard power units 200. Furthermore, when a frame unit 310 is placed on a standard power unit 200, one standard power unit 200 corresponds to one frame unit 310, with a one-to-one correspondence. In this embodiment, to achieve standardization, the frame unit 310 also has standard dimensions. Typically, the length, width, and height of the frame unit 310 correspond to the length, width, and height of the standard power unit 200. For example, the length of the frame unit 310 is between 15mm and 50mm (inclusive), the width is between 15mm and 50mm (inclusive), and the height is between 5mm and 20mm (inclusive).
[0080] like Figure 1As shown, the fastener 400 is used in conjunction with the through hole 312 and the mounting hole 130 to directly press the standard power unit 200 onto the mounting surface 110 of the heat sink 100 via the frame unit 310, ensuring the stability and safety of the module. In one embodiment, the fastener 400 is a bolt, wherein the external thread of the bolt is adapted to the internal thread of the through hole 312 and the mounting hole 130 to complete the assembly.
[0081] See below Figure 7 and Figure 8 With specific examples, this document explains how to assemble and build related circuits based on the power semiconductor module 10 in this embodiment.
[0082] In order to build such Figure 7 The three-phase inverter circuit shown requires six standard power units 200. Each standard power unit 200 contains a power structure 220 including two power chips 223: an IGBT and a diode. Assembly is as follows: First, select six unit mounting areas 140 on the mounting surface 110 of the heat sink 100, arranged in two rows and three columns. Second, place the six standard power units 200 on the six unit mounting areas 140. Then, cut the modular frame 300 to obtain six frame units 310 arranged in two rows and three columns, and place the six frame units 310 on the six standard power units 200. Finally, pass twelve fasteners through the corresponding through holes 312 and lock them in the mounting holes 130. It should be noted that the pins 225 of the power structures 200 in the six standard power units 200 are electrically led out through the lead-out holes 212 to facilitate the functional connection of the three-phase inverter circuit.
[0083] In summary, the scalable power semiconductor module of this utility model has the following advantages: Good heat dissipation performance; by directly pressing the standard power unit onto the mounting surface of the heat sink, the use of an additional mounting substrate is avoided, which helps improve the module's heat dissipation efficiency and current carrying capacity; Good scalability; both the power unit and the mounting frame are standardized components. The power unit can be adapted to different power and voltage levels by changing the number of chips, series / parallel connection method, chip specifications, etc., and the mounting frame can be arbitrarily cut according to the number and shape of the power units based on requirements, enhancing scalability; Low production cost; through the standardized design of the power unit and frame unit, large-scale production is possible, leveraging economies of scale to improve cost-effectiveness and capitalize on economies of scale. In addition, enhanced material versatility reduces raw material waste, further reducing production costs; Short development cycle; standardized design helps improve development efficiency and shorten the development cycle.
[0084] The above embodiments are merely illustrative of the principles and effects of this utility model and are not intended to limit the scope of this utility model. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of this utility model. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in this utility model should still be covered by the claims of this utility model.
Claims
1. A scalable power semiconductor module, characterized in that, include: A radiator includes at least one set of mounting holes disposed on the mounting surface of the radiator, wherein the at least one set of mounting holes divides the mounting surface of the radiator into at least one unit mounting area; At least one standard power unit is disposed on the unit mounting area, including a housing and a power structure encapsulated in the housing; A modular frame includes at least one frame unit, wherein the frame unit includes an insulating frame and a set of through holes disposed on the insulating frame, the insulating frame is disposed on the edge of the housing of the standard power unit, and the through holes are correspondingly disposed with the mounting holes; At least one set of fasteners, used in conjunction with the through hole and the mounting hole, to press the standard power unit directly onto the mounting surface of the radiator via the frame unit.
2. The scalable power semiconductor module according to claim 1, characterized in that, The heat sink includes multiple sets of mounting holes, which are arranged in an array on the entire mounting surface of the heat sink. Each set of mounting holes corresponds to a unit mounting area. The number of unit mounting areas is greater than or equal to the number of standard power units, and the number of standard power units is equal to the number of frame units. The selected unit mounting area, standard power unit, and frame unit correspond one-to-one.
3. The scalable power semiconductor module according to claim 2, characterized in that, A set of mounting holes consists of four holes, located at the four corners of the unit mounting area. Two adjacent unit mounting areas share two mounting holes.
4. The scalable power semiconductor module according to claim 1, characterized in that, The outer casing includes: The top housing is provided with a plurality of outlet holes, wherein the insulating frame is disposed on the outside of the outlet holes on the top housing; A side housing is disposed around the top housing, wherein the bottom end of the side housing is flush with the bottom end of the power structure.
5. The scalable power semiconductor module according to claim 4, characterized in that, The aforementioned outlet holes are arranged in an array on the top housing.
6. The scalable power semiconductor module according to claim 4 or 5, characterized in that, The power structure includes: Insulating substrate; At least one power chip is disposed on the insulating substrate through a solder layer, wherein the lead-out terminals of the power chip are electrically led out through the lead-out holes via pins.
7. The scalable power semiconductor module according to claim 6, characterized in that, When the number of power chips is greater than one, the power chips are electrically connected in parallel and / or in series.
8. The scalable power semiconductor module according to claim 6, characterized in that, The insulating substrate includes an insulating layer, a first metal layer disposed on the insulating layer, and a second metal layer disposed below the insulating layer. The pins are disposed on the first metal layer and are electrically connected to the leads of the power chip via bonding wires.
9. The scalable power semiconductor module according to claim 1, characterized in that, The modular frame includes multiple frame units, which are arranged in an array; by cutting the modular frame, the number of frame units is adapted to the number of standard power units.
10. The scalable power semiconductor module according to claim 1, characterized in that, The standard power unit has a length between 15mm and 50mm, a width between 15mm and 50mm, and a height between 5mm and 20mm; the length, width, and height of the frame unit correspond to and match the length, width, and height of the standard power unit.