Quenching tower and cold hydrogenation process treatment system
By designing a tray structure with gradually decreasing air permeability and a defoamer spray system in the quench tower, the problem of tray blockage caused by insufficient slag discharge in the quench tower was solved, achieving effective gas separation and stable operation.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- 青海丽豪清能股份有限公司
- Filing Date
- 2025-03-03
- Publication Date
- 2026-05-01
AI Technical Summary
In current polysilicon production, insufficient slag discharge from the quench tower leads to tray blockage, affecting normal operation.
Design a quench tower in which the number of vent holes in the tray decreases or becomes equal along the height direction, and combined with a bubble breaker and a spray system, to achieve stepwise separation of gas and liquid and heat and mass exchange.
This reduces the likelihood of tray blockage, improves the operational stability and fault tolerance of the quench tower, and ensures smooth gas flow.
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Figure CN224180264U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of polysilicon production technology, and in particular to a quench tower and a cold hydrogenation process system. Background Technology
[0002] In polysilicon production, a quench tower is typically used to cool and wash the mixed gas generated in the cold hydrogenation reactor. At the same time, the silicon powder, metal impurities, and high-boiling-point substances carried in the mixed gas are separated and discharged from the bottom of the quench tower to the slurry treatment process section.
[0003] When the cold hydrogenation process system is operating at full capacity, the quench tower's throughput increases, leading to a corresponding increase in slag discharge. However, existing slurry treatment processes are insufficient to handle the slurry from the entire polysilicon production process, potentially affecting the quench tower's slag discharge. Insufficient slag discharge from the quench tower can increase high-boiling-point substances, causing tray blockage and even disrupting its normal operation. Utility Model Content
[0004] This application provides a quench tower and a cold hydrogenation process treatment system to solve the problem of quench tower tray blockage caused by insufficient slag discharge in the quench tower in the prior art.
[0005] To achieve the above objectives, this application adopts the following technical solution:
[0006] The first aspect of this application provides a quench tower, comprising: a tower body with an air inlet located near the bottom of the tower body; N trays disposed within the tower body and above the air inlet, each tray having a plurality of vent holes; the trays being arranged sequentially from low to high along the height direction of the tower body; when tray n is less than or equal to m, the diameter of the vent holes on the trays decreasing sequentially from low to high along the height direction of the tower body; when tray n is greater than or equal to m, the diameter of the vent holes on all trays being equal; wherein N and m are both any positive integers greater than 3.
[0007] As an optional implementation, when n is less than or equal to m, the difference in the diameter of the vent holes on adjacent trays is 1 mm to 5 mm.
[0008] As an optional implementation, the vents are evenly distributed on the tray.
[0009] As an optional implementation, it also includes at least one bubble breaker disposed between the air inlet and the tray.
[0010] As an optional implementation, the bubble breaker includes a first bubble breaker and a second bubble breaker, with the second bubble breaker spaced above the first bubble breaker along the height direction of the tower.
[0011] As an optional implementation, the height difference between the first bubble breaker and the second bubble breaker is M meters, the height difference between the first bubble breaker and the air inlet is 2M meters, and the height difference between the second bubble breaker and the tray closest to the bottom of the tower is 6M meters.
[0012] As an optional implementation, it also includes:
[0013] The spray element is installed inside the tower body and located above the tower tray; the spray element is connected to the spray liquid storage tank through the liquid inlet pipe.
[0014] As an optional implementation, it also includes: a replenishment pipe, one end of which is connected to the spray liquid storage tank, and the other end is connected to the tower body and located below the tower tray.
[0015] As an optional implementation, the inlet pipe is equipped with a flow meter and an inlet control valve, with the inlet control valve located on the side of the flow meter near the spray element; the replenishment pipe is connected to the inlet pipe and located between the flow meter and the inlet control valve; and the replenishment pipe is equipped with a replenishment control valve at one end near the inlet pipe.
[0016] The second aspect of this application provides a cold hydrogenation process system, comprising: a quench tower according to any of the above, wherein the tower body of the quench tower is further provided with a liquid inlet; and a vaporizer, wherein the outlet of the vaporizer is connected to the liquid inlet via a pipeline.
[0017] The quench tower and cold hydrogenation process system provided in this application include a quench tower body and N trays disposed within the tower body. The tower body has an inlet near the bottom of the tower. The trays are located above the inlet and have multiple vent holes distributed on them, arranged sequentially from lowest to highest along the height of the tower body. When tray n is less than or equal to m, the vent hole diameters on the trays decrease sequentially from lowest to highest along the height of the tower body. When tray n is greater than or equal to m, the vent hole diameters on all trays are equal. Here, N and m are both any positive integer greater than 3.
[0018] With the above setup, when the gas generated by the cold hydrogenation reactor enters the quench tower through the inlet at the bottom of the tower, the gas flows upward and passes through multiple layers of tower trays through the vent holes on the trays, and comes into contact with the process liquid to exchange heat and mass.
[0019] When tray n is less than or equal to m, the pore size of the vent holes on the trays decreases sequentially from bottom to top along the height of the tower. The vent hole size on the tray closest to the bottom of the tower is relatively large, which can filter out larger-sized impurities. The gas continues to flow upward and passes through the upper trays layer by layer, achieving the step-by-step separation of solid impurities carried in the gas. This reduces the probability of tray blockage in the quench tower, increases the fault tolerance of the quench tower operation adjustment, and improves operational stability.
[0020] When tray n is greater than or equal to m, the diameter of the vent holes on each tray is equal, which enables some tray parts to be interchangeable and also avoids the gas flow being affected by the vent hole diameter being too small. Attached Figure Description
[0021] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0022] Figure 1 This is a schematic diagram of the structure of a quench tower provided in an embodiment of this application;
[0023] Figure 2 This is a partial structural diagram of a tower tray provided in an embodiment of this application.
[0024] Explanation of reference numerals in the attached figures:
[0025] 10-Quick Cooling Tower; 100-Tower Body; 101-Air Inlet; 110-Tower Tray; 111-Ventilation Hole; 112-Overflow Weir; 113-Downcomer; 120-Bubble Breaker; 121-First Bubble Breaker; 122-Second Bubble Breaker; 130-Liquid Inlet Pipe; 131-Flow Meter; 132-Liquid Inlet Control Valve; 133-Spray Component; 140-Replenishment Pipe; 141-Replenishment Control Valve; 150-Air Inlet Pipe;
[0026] 20 - Cold hydrogenation reactor; 30 - Spray liquid storage tank; 40 - Vaporizer. Detailed Implementation
[0027] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application. Unless otherwise specified, the following embodiments and features can be combined with each other.
[0028] Polysilicon is an upstream raw material for the photovoltaic and semiconductor industries. It is mainly purified by a series of chemical processes on industrial silicon powder to obtain solar-grade polysilicon and electronic-grade crystalline silicon that can be used in the solar energy and electronics industries.
[0029] Currently, the modified Siemens process is widely used to produce polycrystalline silicon, mainly involving the synthesis reaction section, the cold hydrogenation reaction section, and the reduction reaction section. The cold hydrogenation reaction section primarily involves vaporizing silicon tetrachloride, a reduction byproduct, with hydrogen gas in a vaporizer to form a mixed gas. This mixed gas is then combined with silicon powder at 500-560℃ / 2.7-3.0MPa to synthesize trichlorosilane. The crude trichlorosilane is purified by distillation and then transported to the reduction reaction section, where it is deposited at high temperature to form high-purity polycrystalline silicon rods.
[0030] In the cold hydrogenation reaction section, a quench tower is needed to cool and wash the mixed gas generated by the cold hydrogenation reactor, and to separate the silicon powder, metal impurities and high-boiling substances carried in the reaction gas. The gas is then discharged into the slurry treatment system for unified treatment by the slurry treatment process.
[0031] When the cold hydrogenation process system is operating at full capacity, the quench tower's throughput increases, resulting in a greater amount of slag discharge. However, existing slurry treatment processes are insufficient to handle the slurry from the entire polysilicon production process, potentially affecting the quench tower's slag discharge.
[0032] When the slag discharge from the quench tower is insufficient, the amount of high-boiling-point substances inside the quench tower may increase, which can lead to blockage of the tower trays and even affect the normal operation of the quench tower.
[0033] In view of this, this application provides a quench tower and a cold hydrogenation process system. The quench tower includes a tower body and N trays disposed within the tower body. The tower body has an inlet near the bottom of the tower. The trays are located above the inlet and have multiple vent holes distributed on them, arranged sequentially from lowest to highest along the height of the tower body. When tray n is less than or equal to m, the diameter of the vent holes on the trays decreases sequentially from lowest to highest along the height of the tower body. When tray n is greater than or equal to m, the diameter of the vent holes on all trays is equal. Wherein, N and m are both any positive integer greater than 3.
[0034] With the above setup, when the gas generated by the cold hydrogenation reactor enters the quench tower through the inlet at the bottom of the tower, the gas flows upward and passes through multiple layers of tower trays through the vent holes on the trays, coming into contact with the process liquid and undergoing heat / mass exchange.
[0035] When tray n is less than or equal to m, the pore size of the vent holes on the trays decreases sequentially from bottom to top along the height of the tower. The vent hole size on the tray closest to the bottom of the tower is relatively large, which can filter out larger-sized impurities. The gas continues to flow upward and passes through the upper trays layer by layer, achieving the step-by-step separation of solid impurities carried in the gas. This reduces the probability of tray blockage in the quench tower, increases the fault tolerance of the quench tower operation adjustment, and improves operational stability.
[0036] When tray n is greater than or equal to m, the diameter of the vent holes on each tray is equal, which enables some tray parts to be interchangeable and also avoids the gas flow being affected by the vent hole diameter being too small.
[0037] The contents of this application will now be described in detail with reference to the accompanying drawings, so that those skilled in the art can have a clearer and more detailed understanding of the contents of this application.
[0038] Figure 1 This is a schematic diagram of a quench tower provided in an embodiment of this application. Figure 2 This is a partial structural schematic diagram of a tower tray provided in an embodiment of this application. (Refer to...) Figure 1 and Figure 2 As shown, this application provides a quench tower 10, including a tower body 100 and N trays 110 disposed within the tower body 100. An inlet 101 is provided on the tower body 100 near the bottom, through which reactant gas discharged from the cold hydrogenation reactor 20 enters the interior of the quench tower 10. The N trays 110 are located above the inlet 101, and each tray 110 has multiple vent holes 111 distributed on it. The trays 110 are arranged sequentially from low to high along the height direction of the tower body 100, and the gas passes through the multiple vent holes 111 on the trays 110 sequentially from low to high.
[0039] When tray n is less than or equal to m, the diameter of the vent holes 111 on each tray 110 decreases sequentially. When tray n is greater than or equal to m, the diameter of the vent holes 111 on each tray 110 is equal. Here, N and m are both any positive integers greater than 3.
[0040] For example, N can be 6, m can be 4, and the trays 110, 210, 310, 410, 510 and 610 are arranged from low to high along the height direction of the tower body 100.
[0041] Among them, the aperture of the vent hole 111 of tray 1 is greater than that of the vent hole 111 of tray 2, which is greater than that of the vent hole 111 of tray 3, which is greater than that of the vent hole 111 of tray 4, and the aperture of the vent hole 111 of tray 4 is equal to that of the vent hole 111 of tray 5, which is equal to that of the vent hole 111 of tray 6.
[0042] When N is 6, m can also be 5. Then the diameter of the vent hole 111 on tray 110 to tray 5 decreases sequentially, and the diameter of the vent hole 111 on tray 5 to tray 6 is equal.
[0043] Alternatively, when N is 9, m is 6. Trays 1 to 9 are arranged sequentially from lowest to highest along the height of the tower body 100. The diameter of the vent holes 111 on trays 1 to 6 decreases sequentially, while the diameter of the vent holes 111 on trays 6 to 9 is the same.
[0044] It should be noted that the setting of N controls the number of heat / mass exchanges between the gas and the process liquid, while the setting of m controls the minimum diameter of the vent holes 111 on the tray 110. In the quench tower 10, the number of trays 110 affects the cooling separation effect, while the size of the vent holes 111 affects the gas-liquid contact efficiency, pressure drop, and other performance characteristics of the quench tower 10. When the vent hole diameter is too small, it may obstruct gas flow, increase pressure drop, and may also cause liquid to accumulate on the tray, increasing the risk of flooding.
[0045] The value of N can be determined based on the actual requirements of heat / mass exchange between the gas and the process liquid. The value of m can be determined based on the diameter of the vent hole 111 of the bottom tray 110 in the specific design, the difference in diameter of the vent holes 111 on adjacent trays 110, and the minimum diameter of the vent hole 111. No specific limits are made on the values of N and m here.
[0046] With the above settings, when the gas generated by the cold hydrogenation reactor 20 enters the quench tower 10 through the inlet 101 at the bottom of the tower, the gas flows upward and passes through the multiple layers of tower trays 110 layer by layer through the vent holes 111 on the trays 110, coming into contact with the process liquid and undergoing heat / mass exchange.
[0047] When tray n is less than or equal to m, the diameter of the vent holes 111 on trays 110 decreases sequentially from low to high along the height direction of the tower body 100. The vent holes 111 on the tray 110 closest to the bottom of the tower have relatively large diameters, which can screen out larger-sized impurities. The gas continues to flow upward and passes through the upper trays layer by layer, achieving the step-by-step separation of solid impurities carried in the gas. This reduces the probability of clogging on tray 110 of the quench tower 10, while also increasing the fault tolerance rate for operation adjustment of the quench tower 10 and improving operational stability.
[0048] When tray n is greater than or equal to m, the diameter of the vent holes 111 on each tray 110 is equal, which enables the interchangeability of some tray 110 parts and avoids the gas flow being affected by the small diameter of the vent holes 111 on the tray 110.
[0049] In one implementation, when tray n is less than or equal to m, the difference in aperture of the vent holes 111 on adjacent trays 110 is 1mm-5mm. For example, the difference in aperture of the vent holes 111 can be 1mm, 1.5mm, 2mm, 2.5mm, 3mm, 3.5mm, 4mm, 4.5mm, 5mm, etc.
[0050] Reference Figure 2 As shown, when N is 6 and m is 4, the difference in aperture of the vent holes 111 on adjacent trays 110 can be 2 mm. Specifically, the aperture of the vent hole 111 on tray 110 closest to the bottom of the tower can be φ24 mm, the aperture of the vent hole 111 on tray 2 can be φ22 mm, the aperture of the vent hole 111 on tray 3 can be φ20 mm, the aperture of the vent hole 111 on tray 4 can be φ18 mm, and the aperture of the vent hole 111 on trays 5 and 6 is φ18 mm.
[0051] Alternatively, when N is 9 and m is 5, the difference in aperture of the vent holes 111 on adjacent trays 110 can be 4 mm. Specifically, the aperture of the vent hole 111 on tray 110 closest to the bottom of the tower can be φ36 mm, the aperture of the vent hole 111 on tray 2 can be φ32 mm, the aperture of the vent hole 111 on tray 3 can be φ28 mm, the aperture of the vent hole 111 on tray 4 can be φ24 mm, the aperture of the vent hole 111 on tray 5 can be φ20 mm, and the aperture of the vent hole 111 on trays 6 to 9 can all be φ20 mm.
[0052] This configuration allows the difference in the diameter of the vent holes 111 between adjacent trays 110 to be kept within a reasonable range, without affecting the gas-liquid two-phase mass and heat transfer effect on the trays 110 inside the quench tower 10.
[0053] As an optional implementation, the vents 111 are evenly distributed on the tray 110. This even distribution of vents 111 reduces the possibility of excessively high or low local gas flow rates, lowering the risk of flooding and gas entrainment. This ensures uniform gas distribution across the entire tray 110, achieving uniform gas-liquid contact. This facilitates stable operation and uniform mass transfer.
[0054] In addition, tray 110 is also equipped with an overflow weir 112 and a downcomer 113. The overflow weir 112 and downcomer 113 are located at the same end of tray 110, and the end of the upper tray 110 where the overflow weir 112 and downcomer 113 are located is opposite to the end of the lower tray 110 where the overflow weir 112 and downcomer 113 are located. The overflow weir 112 protrudes from tray 110, allowing the spray liquid to accumulate a certain thickness of liquid layer on each tray 110, thereby maintaining a stable gas-liquid contact time and improving mass and heat transfer efficiency. There is a certain gap between the downcomer 113 and the inner wall of the tower body 100 to allow liquid to flow through. When the liquid height on tray 110 exceeds the overflow weir, the spray liquid can flow to the lower tray 110 through the gap between the downcomer 113 and the inner wall of the tower body 100. The spray liquid on tray 110 inside the quench tower 10 moves in an S-shape, flowing from the upper tray 110 to the lower tray 110. It should be noted that the overflow weir and downcomer structures are common designs in the prior art, and will not be described in detail here.
[0055] Continue to refer to Figure 1 The quench tower 10 also includes at least one bubble deflator 120, which is disposed between the inlet 101 and the tray 110. Gas enters the tower body 100 through the inlet 101, flows upward, passes through the bubble deflator 120, and then reaches the tray 110. The bubble deflator 120 reduces or eliminates large bubbles within the quench tower 10, thereby improving the overall performance and reliability of the quench tower. For example, the bubble deflator 120 can be a perforated plate or a mesh structure. When bubbles pass through the bubble deflator 120, they are physically captured and broken, preventing them from rising into the upper tray 110.
[0056] In some embodiments, the bubble breaker 120 includes a first bubble breaker 121 and a second bubble breaker 122. Along the height direction of the tower body 100, the second bubble breaker 122 is disposed at intervals above the first bubble breaker 121.
[0057] Setting up a double-layer bubble breaker can improve the bubble elimination effect within the quench tower 10. When the bubble breaker 120 has multiple layers, in some embodiments, different grid sizes can be set for each layer of bubble breaker 120 to break bubbles of different sizes. For example, the grid size of the upper bubble breaker 120 can be smaller than that of the lower bubble breaker 120, thereby further improving the bubble breaking effect of the bubble breaker 120.
[0058] The height difference between the first bubbler 121 and the second bubbler 122 can be set to M meters. The height difference between the first bubbler 121 and the air inlet 101 can be set to 2M meters. The height difference between the second bubbler 122 and the tray 110 closest to the bottom of the column can be set to 6M meters. It should be noted that the specific value of M can be determined according to the actual specifications of the quench tower 10. For example, if M is 0.5 meters, then the height difference between the first bubbler 121 and the air inlet 101 can be set to 1 meter, and the height difference between the second bubbler 122 and the tray 110 closest to the bottom of the column can be set to 3 meters. Of course, M can also be 0.6 meters, 0.8 meters, 1 meter, or other values; no specific limitation is made here.
[0059] By reasonably setting the height difference between the bubble breakers 120, the height difference between the bubble breaker 120 and the air inlet 101, and the height difference between the bubble breaker 120 and the bottom tray 110, for example, by setting a reasonable distance between the lower bubble breaker and the air inlet 101, when the gas enters from the air inlet 101 and flows upward, the impurities carried in the gas may gradually fall down during the flow process. This can prevent the bubble breakers 120 from becoming scaled and blocked due to long-term operation of the quench tower 10, thereby affecting the spraying effect of the quench tower 10 and causing the tower bottom to be short of liquid.
[0060] In some embodiments, the bubble breaker 120 may also be made of a corrosion-resistant and scale-resistant material to reduce the risk of scale buildup in the bubble breaker 120.
[0061] In one embodiment, the quench tower 10 may further include a spray element 133. The spray element 133 is disposed inside the tower body 100 and located above the tray 110. The spray element 133 is connected to an external spray liquid storage tank 30 via a liquid inlet pipe 130 to achieve uniform spraying of spray liquid into the interior of the quench tower 10. Specifically, the spray liquid storage tank 30 may be a spherical tank, which may store liquid chlorosilane.
[0062] Understandably, when the cold hydrogenation process system is running at full load, the spray volume of the spray element 133 is insufficient to maintain the gas-liquid balance of the quench tower 10, which can easily lead to a shortage of liquid in the tower bottom. In addition, when abnormal conditions occur in the system, such as excessively high inlet temperature or excessive residual discharge (due to improper system adjustment), a shortage of liquid in the tower bottom and a dry tower may also occur.
[0063] To prevent the tower from drying out, as one implementation, the quench tower 10 also includes a makeup pipe 140. One end of the makeup pipe 140 is connected to the spray liquid storage tank 30, and the other end is connected to the tower body 100 and located below the tray 110. Specifically, the makeup pipe 140 can be connected to the spare port on the tower body 100 or to the liquid level gauge at the bottom of the quench tower 10.
[0064] By setting up a replenishment pipe 140 connected to the spray liquid storage tank 30, the spray liquid can be directly introduced into the bottom of the tower through the replenishment pipe 140, thereby avoiding the occurrence of a dry tower in the quench tower 10.
[0065] In some embodiments, the inlet pipe 130 is provided with a flow meter 131 and an inlet control valve 132, with the inlet control valve 132 located on the side of the flow meter 131 near the spray element 133.
[0066] The replenishment pipe 140 is connected to the inlet pipe 130 and is located between the flow meter 131 and the inlet control valve 132. Furthermore, the replenishment pipe 140 is equipped with a replenishment control valve 141 at the end near the inlet pipe 130.
[0067] In this way, a portion of the inlet pipe 130 can be shared, reducing material consumption. At the same time, the flow rate entering the inlet pipe 130 and the replenishment pipe 140 can be controlled through the cooperation between the flow meter 131, the inlet control valve 132, and the replenishment control valve 141.
[0068] In one embodiment, the quench tower 10 also includes an inlet pipe 150, which passes through the inlet port 101 and extends into the tower body 100. Furthermore, multiple inlet holes are formed on the wall of the inlet pipe 150 along its axial direction. Specifically, the inlet pipe 150 can be configured as a ring pipe.
[0069] This configuration allows gas to enter the quench tower 10 quickly and evenly, thereby enhancing the operational stability of the quench tower 10.
[0070] The working principle of the quench tower 10 provided in this embodiment is as follows:
[0071] The process liquid enters the quench tower 10 from the spray liquid pipeline. The spray pipeline is connected to the spray head inside the top of the quench tower 10, and the spray head evenly distributes the spray liquid inside the quench tower 10. It can then exchange heat / mass with the process gas on the tray 110.
[0072] The process gas enters the quench tower 10 through the inlet 101 and is ejected from multiple inlet holes arranged in an array along the axial direction on the bottom surface of the inlet pipe 150. After passing through the bubble breaker above, the gas is dispersed into fine bubbles so that it can exchange heat / mass with the process liquid.
[0073] After being broken up by the bubble degasser, the process gas continues to flow upwards, coming into contact with the process liquid (spray liquid) on tray 110 through the vent 111, where heat / mass exchange occurs. The high-boiling-point components in the process gas liquefy after being cooled by the liquid and fall with it into the liquid phase zone at the bottom of the quench tower 10. The low-boiling-point components (the desired components) flow out of the quench tower 10 from the gas outlet after being cooled and washed by the multi-layer trays 110.
[0074] When the quench tower 10 is short of liquid, the liquid phase zone of the quench tower 10 can be replenished through the replenishment pipe 140 to prevent the quench tower 10 from drying out.
[0075] This application also provides a cold hydrogenation process system, including a quench tower 10 as described in the above embodiment and a vaporizer 40. The vaporizer 40 mainly heats and vaporizes a mixture of silicon tetrachloride liquid and hydrogen with steam to obtain a mixed gas of silicon tetrachloride and hydrogen.
[0076] The quench tower 10 also has a liquid inlet on its tower body 100, which can be connected to the outlet of the vaporizer 40 via a pipeline. It should be noted that the outlet of the vaporizer 40 refers to its residual liquid discharge outlet. During vaporization, high-boiling-point substances may accumulate at the bottom of the vaporizer 40; therefore, these substances need to be discharged through the residual liquid discharge pipeline to ensure the performance of the vaporizer 40 and the stability of the system.
[0077] The sludge discharge outlet of the vaporizer can be connected to the liquid inlet of the quench tower 10 via a sludge discharge pipeline. High-boiling-point substances accumulated in the vaporizer 40 can enter the quench tower 10 through this liquid inlet and be discharged from the bottom of the quench tower 10 together with the high-boiling-point substances in the quench tower 10.
[0078] Furthermore, when the system is unstable, such as due to excessive feed rate or improper temperature and pressure control, the residual liquid drain line can also regulate the liquid level in the vaporizer. Simultaneously, the residual liquid drain line also serves to balance system pressure and drain liquid during maintenance.
[0079] In some embodiments, the cold hydrogenation process system further includes a cold hydrogenation reactor 20 and a spray liquid storage tank 30. The gas outlet of the cold hydrogenation reactor 20 is connected to the gas inlet 101 of the quench tower 10, so that the reactant gas in the cold hydrogenation reactor 20 can enter the quench tower 10 for cooling, washing and separation.
[0080] In one implementation, the cold hydrogenation process system may further include a heat exchanger (not shown) and a pressurization device (not shown). The heat exchanger may be located between the outlet of the cold hydrogenation reactor 20 and the inlet 101 of the quench tower 10, thereby cooling the high-temperature gas at the outlet of the cold hydrogenation reactor 20 to the tolerance range of the quench tower 10, so that the system can operate normally.
[0081] A pressurization device, such as a booster pump, can also be installed between the spray liquid storage tank 30 and the quench tower 10. In this way, the spray liquid in the spray liquid storage tank 30 can be pumped into the quench tower through the pressurization device to achieve vertical or long-distance liquid transportation.
[0082] It should be noted that the terms "one embodiment," "embodiment," "exemplary embodiment," "some embodiments," etc., mentioned in the specification indicate that the described embodiment may include a specific feature, structure, or characteristic, but not every embodiment necessarily includes that specific feature, structure, or characteristic. Furthermore, such phrases do not necessarily refer to the same embodiment. Moreover, when a specific feature, structure, or characteristic is described in connection with an embodiment, implementing such a feature, structure, or characteristic in conjunction with other embodiments, whether explicitly described or not, is within the knowledge scope of those skilled in the art.
[0083] Generally speaking, terms should be understood at least in part by their use in context. For example, at least in part by context, the term "one or more" as used in the text can be used to describe any feature, structure, or characteristic of the singular meaning, or a combination of features, structures, or characteristics of the plural meaning. Similarly, at least in part by context, terms such as "a" or "the" can also be understood to convey either singular or plural usage.
[0084] It should be readily understood that the terms “on,” “above,” and “on top of” in this application should be interpreted in the broadest possible sense, such that “on” means not only “directly on something” but also “on something” with an intermediate feature or layer therebetween, and that “above” or “on top of” means not only “on something” but also “on something” without an intermediate feature or layer therebetween (i.e., directly on something).
[0085] Furthermore, for ease of explanation, spatially relative terms such as "below," "below," "under," "above," and "above" may be used to describe the relationship of one element or feature relative to other elements or features as shown in the figures. Spatially relative terms are intended to encompass different orientations of the device in use or operation other than those shown in the figures. The device may have other orientations (rotated 90° or in other orientations), and the spatially relative descriptive terms used herein may be interpreted accordingly.
[0086] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.
Claims
1. A quench tower, characterized in that, include: The tower body is provided with an air inlet, which is located near the bottom of the tower body; N trays are disposed inside the tower body and above the air inlet, and multiple air vents are distributed on the trays; the trays are arranged in order from low to high along the height direction of the tower body; When tray n is less than or equal to m, the diameter of the vent holes on the trays decreases sequentially from low to high along the height direction of the tower body; when tray n is greater than or equal to m, the diameter of the vent holes on all trays is equal; where N and m are both any positive integers greater than 3.
2. The quench tower according to claim 1, characterized in that, When tray n is less than or equal to m, the difference in the diameter of the vent holes on adjacent trays is 1mm-5mm.
3. The quench tower according to claim 1, characterized in that, The aforementioned vent holes are evenly distributed on the tray.
4. The quench tower according to any one of claims 1-3, characterized in that, It also includes at least one bubble breaker disposed between the air inlet and the tray.
5. The quench tower according to claim 4, characterized in that, The bubble breaker includes a first bubble breaker and a second bubble breaker. Along the height direction of the tower body, the second bubble breaker is spaced above the first bubble breaker.
6. The quench tower according to claim 5, characterized in that, The height difference between the first bubble breaker and the second bubble breaker is M meters, the height difference between the first bubble breaker and the air inlet is 2M meters, and the height difference between the second bubble breaker and the tray closest to the bottom of the tower is 6M meters.
7. The quench tower according to any one of claims 1-3, characterized in that, Also includes: A spray element is installed inside the tower body and located above the tower tray; The spraying component is connected to the spray liquid storage tank via an inlet pipe.
8. The quench tower according to claim 7, characterized in that, Also includes: The replenishment pipe has one end connected to the spray liquid storage tank and the other end connected to the tower body and located below the tower tray.
9. The quench tower according to claim 8, characterized in that, The inlet pipe is equipped with a flow meter and an inlet control valve, with the inlet control valve located on the side of the flow meter closer to the spray element; The replenishment pipe is connected to the inlet pipe and is located between the flow meter and the inlet control valve; and the replenishment pipe is provided with a replenishment control valve at one end near the inlet pipe.
10. A cold hydrogenation process system, characterized in that, include: The quench tower according to any one of claims 1-9, wherein the tower body of the quench tower is further provided with a liquid inlet; A vaporizer, the outlet of which is connected to the liquid inlet via a pipeline.