Large silicon wafer string type photovoltaic module with high light source utilization rate

Abstract

The utility model discloses a large silicon wafer string type photovoltaic assembly with high light source utilization rate, which comprises a back plate (1), a frame (2) is arranged at the edge of the back plate (1), a silicon wafer cell string (3) and outer glass (5) are sequentially arranged in the frame (2) from inside to outside, the silicon wafer cell string (3) comprises a plurality of silicon wafer cells (6) arranged in the frame (2), and the silicon wafer cells (6) are connected through a plurality of welding strips (7); pyramids (8) which are uniformly distributed along the arrangement direction of the welding strip (7) are arranged on the front surface of the welding strip (7), and reflective layers (9) are arranged on the surfaces of the pyramids (8); according to the utility model, light is guided to the silicon wafer cell through the pyramids and the reflection inclined planes on the solder strip, thereby effectively improving light source utilization.

Description

Technical Field

[0001] This utility model relates to the field of photovoltaic technology, and in particular to a large silicon wafer string photovoltaic module with high light source utilization. Background Technology

[0002] Large-wafer photovoltaic (PV) modules refer to solar PV modules that use large-size silicon wafers as the core power generation unit. Their core characteristic is the larger silicon wafer size compared to traditional specifications. Currently, mainstream sizes include 182mm×182mm (M10) and 210mm×210mm (G12), etc. Compared to earlier smaller silicon wafers such as 156.75mm and 166mm, the area of ​​a single silicon wafer is significantly increased, reducing the area of ​​shading and thus improving the power output and power generation efficiency of a single PV module. For example, Chinese utility model patent CN213483760U discloses a lightweight large-wafer half-cell solar PV module, specifically including components such as a frame, glass, and silicon wafer cell matrix. The silicon wafer cell matrix receives sunlight and generates electricity; however, the exposed solder ribbons in the components partially obstruct the cell surface. In existing technologies, the solder ribbons are planar structures, and the reflected light from these planar structures is difficult to be fully utilized by the cells through reflection by the glass, resulting in low light source utilization. Utility Model Content

[0003] The purpose of this invention is to provide a large silicon wafer string photovoltaic module with high light source utilization. This invention guides light to the silicon wafer cells through the pyramidal shapes and reflective slopes on the solder strip, effectively improving the light source utilization.

[0004] The technical solution of this utility model is as follows: A large silicon wafer string photovoltaic module with high light source utilization includes a back panel, a frame at the edge of the back panel, and a silicon wafer cell string and an outer glass layer arranged sequentially from the inside to the outside within the frame. The silicon wafer cell string comprises multiple silicon wafer cells arranged within the frame, connected by multiple solder strips; the front of each solder strip has pyramids evenly distributed along its arrangement direction, and the surface of each pyramid has a reflective layer; the outer side of the inner surface of the frame has a reflective slope, the incident direction of which corresponds to the reflective layer of the pyramid, and the exit direction of which corresponds to the surface of the silicon wafer cell; the edge of the outer glass layer is aligned with the reflective slope.

[0005] In the aforementioned high light source utilization large silicon wafer string photovoltaic module, the number of lateral facets of the pyramid is greater than or equal to four and is an even number; the extension lines of the upper, lower, left, and right lateral facets of the pyramid are opposite to the corresponding lateral facets of adjacent pyramids; and the slope of the lateral facets of the pyramid is greater than 60°.

[0006] In the aforementioned high light source utilization large silicon wafer string photovoltaic module, the pyramid is a square pyramid with a rhomboid base and two obtuse angles facing the left and right sides respectively, and the included angle of the obtuse angles is 150°-165°.

[0007] In the aforementioned high light source utilization large silicon wafer string photovoltaic module, the pyramid is an imprinted adhesive block.

[0008] In the aforementioned high light source utilization large silicon wafer string photovoltaic module, the reflective layer is an electroplated aluminum film.

[0009] In the aforementioned high light source utilization large silicon wafer string photovoltaic module, the angle between the reflective inclined surface and the surface of the silicon wafer cell is 60°-70°.

[0010] In the aforementioned high light source utilization large silicon wafer string photovoltaic module, the frame includes an upper C-shaped frame, and a lower C-shaped frame connected to the bottom of the upper C-shaped frame. The upper C-shaped frame, the lower C-shaped frame, and the back plate enclose a cavity for setting the silicon wafer cell string and the outer glass. The reflective slope is set on the inner and outer sides of the upper C-shaped frame and the lower C-shaped frame.

[0011] In the aforementioned high light source utilization large silicon wafer string photovoltaic module, the lower C-shaped frame is connected to the upper C-shaped frame by a through bolt.

[0012] Compared with the prior art, the light illuminating the solder ribbon in this invention is first reflected by the reflective layer of the pyramid. Due to the shape of the pyramid, the originally large-angle incident light is guided into small-angle outgoing light close to the surface of the silicon wafer, and further reflected in various directions. The reflected light is directly shot towards the reflective slope or reflected by the reflective layers of other pyramids and finally shot towards the reflective slope. The reflective slope guides the light directly to the surface of the silicon wafer, so that it can be used to convert into electrical energy. The part of the light that was originally blocked by the solder ribbon and could not be used is reflected once or multiple times by the pyramid to increase the probability of it hitting the reflective slope, and then guided to the silicon wafer, thereby improving the utilization rate of the light source. Attached Figure Description

[0013] Figure 1 This is a schematic diagram of the structure of this utility model;

[0014] Figure 2 This is a schematic diagram of the structure of this utility model after the glass has been removed;

[0015] Figure 3 This is a structural schematic diagram of the welding strip portion of this utility model;

[0016] Figure 4 This is a schematic diagram of the pyramid structure of this utility model.

[0017] The labels in the attached diagram are: 1. Backplate; 2. Frame; 3. Silicon cell string; 5. Outer glass; 6. Silicon cell; 7. Solder strip; 8. Pyramid; 9. Reflective layer; 10. Reflective slope; 11. Upper C-shaped frame; 12. Lower C-shaped frame. Detailed Implementation

[0018] The present invention will be further described below with reference to the accompanying drawings and embodiments, but this should not be construed as limiting the present invention.

[0019] Example: A large silicon wafer string photovoltaic module with high light source utilization, as shown in the attached figure. Figure 1 and attached Figure 2 As shown, the device includes a backplate 1, with a frame 2 fixed to the edge of the backplate 1 by an adhesive film. Silicon wafer cell strings 3 and an outer glass 5 are sequentially assembled inside the frame 2 from the inside out. The frame 2 is fixed to the edge of the backplate 1 by the adhesive film. The large silicon wafer cell strings 3 are adhered to the cavity formed by the backplate and the frame by the adhesive film. The outer glass 5 covers the outside of the large silicon wafer cell strings by the adhesive film. Figure 3 As shown, the silicon wafer cell string 3 includes multiple silicon wafer cells 6 assembled within the frame 2. The silicon wafer cells 6 are connected by multiple solder strips 7 and further connected to a junction box on the back panel via a busbar. The circuit connection is a technique well-known and mastered by those skilled in the art, and will not be described in detail here; see attached... Figure 4As shown, the front side of the welding strip 7 is provided with pyramids 8 evenly distributed along its arrangement direction, and the surface of the pyramids 8 is processed with a reflective layer 9; the outer side of the inner surface of the frame 2 is integrally formed with a reflective slope 10, which reflects light through a metal coating on its surface. The incident direction of the reflective slope 10 corresponds to the reflective layer 9 of the pyramids 8, and the exit direction of the reflective slope 10 corresponds to the surface of the silicon wafer 6; the edge of the outer glass 5 is fitted with the reflective slope 10, and the edge of the outer glass is fitted by processing a chamfer that matches the reflective slope, so the reflective slope has a fixing effect; the... The pyramid 8 has four or more lateral facets, and the number is even. The extension lines of the top, bottom, left, and right lateral facets of the pyramid 8 are opposite to the corresponding lateral facets of adjacent pyramid 8. Light reflected by the reflective layer will not be directed towards the reflective layer on the opposite slope of the adjacent pyramid, thus preventing light from being reflected back to the outside at the same angle and improving reliability. The lateral slope of the pyramid 8 is 80°, ensuring a large-angle reflection of incident light. The pyramid 8 is a square pyramid with a rhomboid base and two obtuse angles facing left and right respectively. The included angle of the obtuse angles is 160°, improving the reliability of a single... The area of ​​the pyramids on the solder strip is reduced to minimize gaps between them, ensuring sufficient reflection utilization. The pyramid 8 is an imprinted adhesive block, formed by coating the solder strip with adhesive and then imprinting and curing it using a mold. The reflective layer 9 is an electroplated aluminum film, with a thickness of 20-30 μm applied to the pyramid surface via electroplating. This film has a certain degree of conductivity and is suitable for solder strips. The angle between the reflective slope 10 and the silicon wafer surface is 70°. The frame 2 includes an upper C-shaped frame 11, with a lower C-shaped frame connected to the bottom of the upper C-shaped frame 11. The upper C-shaped frame 11, the lower C-shaped frame 12, and the back plate 1 enclose a cavity for mounting the silicon wafer cell string 3. The reflective bevel 10 is machined on the inner and outer surfaces of the upper C-shaped frame 11 and the lower C-shaped frame 12. Due to the presence of the reflective bevel, it is difficult to install the silicon wafer cell string and the outer glass completely from the front. Therefore, the silicon wafer cell string and the outer glass are inserted from the side by removing the lower C-shaped frame, which improves the convenience of the processing. Sealant is applied at the connection between the two to ensure sealing. The lower C-shaped frame 12 is connected to the upper C-shaped frame 11 by a through bolt, which is easy to install.

[0020] Working principle: The light shining on the solder ribbon 7 first comes into contact with the reflective layer 9 on the surface of the pyramid 8 on the front side of the solder ribbon. Since the pyramid 8 is a square pyramid with a rhomboid base and an included angle of 160° on the left and right sides, the light is reflected when it hits the side of the pyramid 8. The slope of the side of the pyramid 8 is set to 80°, which means that the light that originally hit at a large angle is guided by reflection to be emitted at a small angle close to the surface of the silicon wafer 6. The small angle emitted light is more conducive to being absorbed and utilized by the silicon wafer 6. Moreover, since the extension lines of the top, bottom, left and right sides of the pyramid 8 are opposite to the corresponding sides of the adjacent pyramid, the light reflected by the reflective layer 9 is prevented from hitting the sloped reflective layer of the adjacent pyramid with the opposite slope. This prevents the light from being reflected back to the outside at the same angle, ensuring that the light can be propagated and utilized more effectively inside the module.

[0021] After the initial reflection by the pyramid 8, part of the light will directly hit the reflecting slope 10, while another part of the light will be reflected again by the reflective layer 9 of the remaining pyramids 8. In this process, the light is continuously reflected between multiple pyramids. Multiple reflections allow the light to spread more widely inside the module. The part of the light that was originally blocked by the solder ribbon 7 and could not be directly used by the silicon wafer 6 is greatly increased in probability of hitting the reflecting slope 10 through one or more reflections by the pyramid 8, thus avoiding the waste of light.

[0022] A reflective bevel 10 is disposed on the inner side of the frame 2. Its surface is coated with a metal layer to achieve reflectivity. The incident direction of the reflective bevel 10 precisely corresponds to the reflective layer 9 of the pyramid 8, while the exit direction corresponds to the surface of the silicon wafer 6. When light reaches the reflective bevel 10, it guides the light directly to the surface of the silicon wafer 6. The silicon wafer 6 is the core component of the photovoltaic module for photoelectric conversion. After the light is guided to its surface, it is absorbed and converted into electrical energy. Light that might otherwise be wasted is ultimately utilized by the silicon wafer 6 through the synergistic effect of the pyramid 8 and the reflective bevel 10, significantly improving the light source utilization rate of the photovoltaic module and thus increasing the overall power generation efficiency of the photovoltaic module.

[0023] The above embodiments merely illustrate the implementation of this utility model, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the utility model patent. Furthermore, in these embodiments, "up," "down," "left," "right," "front," and "back" represent relative positions only, not absolute positions. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this utility model, and these all fall within the protection scope of this utility model. Therefore, the protection scope of this utility model patent should be determined by the appended claims.

Claims

1. A high light source utilization large silicon wafer string photovoltaic module, comprising a back sheet (1), a frame (2) provided at the edge of the back sheet (1), and silicon wafer cell strings (3) and outer glass (5) arranged sequentially from the inside to the outside within the frame (2), characterized in that: The silicon wafer battery string (3) includes multiple silicon wafer batteries (6) disposed within the frame (2), and the silicon wafer batteries (6) are connected by multiple solder strips (7); the front of the solder strip (7) is provided with pyramids (8) evenly distributed along its arrangement direction, and the surface of the pyramids (8) is provided with a reflective layer (9); the outer side of the inner surface of the frame (2) has a reflective slope (10), the incident direction of the reflective slope (10) corresponds to the reflective layer (9) of the pyramid (8), and the exit direction of the reflective slope (10) corresponds to the surface of the silicon wafer battery (6); the edge of the outer glass (5) is fitted with the reflective slope (10).

2. The high light source utilization large silicon wafer string photovoltaic module according to claim 1, characterized in that: The pyramid (8) has four or more lateral facets, and the number is even; the extension lines of the top, bottom, left and right lateral facets of the pyramid (8) are opposite to the corresponding lateral facets of the adjacent pyramid (8); the slope of the side face of the pyramid (8) is greater than 60°.

3. The large silicon wafer string photovoltaic module with high light source utilization according to claim 2, characterized in that: The pyramid (8) is a square pyramid with a rhombus-shaped base and two obtuse angles facing the left and right sides respectively. The included angle of the obtuse angles is 150°-165°.

4. The large silicon wafer string photovoltaic module with high light source utilization according to claim 1, characterized in that: The pyramid (8) is an embossed adhesive block.

5. The large silicon wafer string photovoltaic module with high light source utilization according to claim 1, characterized in that: The reflective layer (9) is an electroplated aluminum film.

6. The large silicon wafer string photovoltaic module with high light source utilization according to claim 1, characterized in that: The angle between the reflective inclined surface (10) and the surface of the silicon wafer is 60°-70°.

7. The large silicon wafer string photovoltaic module with high light source utilization according to claim 1, characterized in that: The frame (2) includes an upper C-shaped frame (11), and a lower C-shaped frame (12) is provided at the bottom of the upper C-shaped frame (11) for combination connection. The upper C-shaped frame (11), the lower C-shaped frame (12) and the back plate (1) enclose a cavity for setting the silicon wafer battery string (3) and the outer glass (5). The reflective inclined surface (10) is provided on the outer side of the inner surface of the upper C-shaped frame (11) and the lower C-shaped frame (12).

8. The large silicon wafer string photovoltaic module with high light source utilization according to claim 7, characterized in that: The lower C-shaped frame (12) is connected to the upper C-shaped frame (11) by a through bolt.

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