Testing device

Abstract

The utility model discloses a test device, relates to the technical field of semiconductors, and solves the technical problem that a test probe is easy to wear. The testing device comprises a substrate testing assembly, a substrate is provided with a bearing surface, and the bearing surface is used for bearing a semiconductor to be tested; the testing assembly comprises a testing probe and a driving part, the testing probe can move to a first position and a second position relative to the base body, the testing probe is far away from the bearing surface at the first position, and the testing probe is close to the bearing surface and can be electrically connected with the semiconductor to be tested at the second position; the driving member is connected to the base body and is used for driving the test probe to move relative to the base body.

Description

Technical Field

[0001] This application relates to, but is not limited to, the semiconductor field, and in particular to a testing device. Background Technology

[0002] A testing device is used to test a semiconductor under test, such as a silicon wafer. The testing device can be used to test the electrical parameters, physical parameters, and dimensional parameters of the silicon wafer.

[0003] In related technologies, there is significant wear between the test probe and the semiconductor under test, which affects the lifespan of the test probe and results in lower accuracy of the test results. Utility Model Content

[0004] The testing device provided in this application has the technical advantages of long service life and high test result accuracy, which is specifically achieved through the following solution:

[0005] This application provides a testing device, including a substrate and a testing component. The substrate has a bearing surface for supporting a semiconductor under test. The testing component includes a test probe and a driving member. The test probe can move relative to the substrate to a first position and a second position. In the first position, the test probe is away from the bearing surface, and in the second position, the test probe is close to the bearing surface and can be electrically connected to the semiconductor under test. The driving member is connected to the substrate and is used to drive the test probe to move relative to the substrate.

[0006] The testing apparatus provided in this application embodiment includes a substrate that serves as a mounting base for the testing components and driving components. The substrate also has a support surface for placing the semiconductor under test (SUT). The testing components include a test probe, which is electrically connected to the SUT to detect its characteristics. The testing components include a test probe and a driving component. The test probe can move relative to the substrate to a first position and a second position. In the first position, the test probe is away from the support surface, while in the second position, it is close to the support surface and electrically connected to the SUT. In other words, the test probe measures the SUT at the second position. The driving component drives the test probe to move relative to the substrate, switching between the first and second positions. Because the driving component moves the test probe closer to the SUT and maintains their relative positions, the interaction force between the SUT and the test probe is small, reducing the likelihood of wear on both, thus protecting the SUT, extending the lifespan of the test probe, and minimizing the adverse effects of wear on the test results. Compared with related technologies where the semiconductor under test and the test probe rely on elastic force to abut against each other, the test device of this application is less likely to damage the semiconductor under test, has a long service life, and has high measurement accuracy.

[0007] In one possible implementation of this application, the test component further includes a first detection circuit for determining that the test probe has moved to a second position; a drive unit is electrically connected to the first detection circuit and brakes the test probe based on the detection result of the first detection circuit.

[0008] Here, a first detection circuit is set up to determine whether the test probe has moved to the second position. The driving component brakes the test probe in time based on the detection result of the first detection circuit, thereby reducing the possibility of the test probe colliding with the semiconductor under test and making it easier for the test probe to accurately stop at the second position.

[0009] In one possible implementation of this application, the first detection circuit includes a voltage sensor and a processor. The voltage sensor is used to detect the voltage applied by the semiconductor under test to the test probe, and the processor determines the second position of the test probe based on the voltage.

[0010] Here, the voltage sensor can detect the voltage applied by the semiconductor under test to the test probe. The processor determines the position of the test probe based on the voltage. The structure is simple and has high accuracy.

[0011] In one possible implementation of this application, the test component further includes a second detection circuit for detecting the relative position of the semiconductor under test and the substrate; the driving element drives the test probe to move relative to the substrate based on the detection result of the second detection circuit.

[0012] Here, the second detection circuit can detect the relative position of the semiconductor under test and the substrate. In other words, the second detection circuit is used to determine whether the semiconductor under test is placed on the substrate. The driving device controls the movement of the test probe relative to the substrate based on the detection result of the second detection circuit, which is more intelligent and also helps to reduce test preparation time and improve test efficiency.

[0013] In one possible implementation of this application, the test probe includes a contact portion, which abuts against the semiconductor under test in a second position; the surface of the contact portion is an arcuate surface; or, the axial cross-sectional profile of the contact portion is set at an obtuse angle.

[0014] Here, the contact surface of the test probe is set to an arc-shaped surface or the axial cross-sectional profile is set to an obtuse angle, which helps to improve impact resistance and the contact surface is relatively smooth, thereby reducing wear and extending the service life of the test probe.

[0015] In one possible implementation of this application, the test probe further includes an extension portion connected between the contact portion and the driving member. The extension portion has a first dimension and a second dimension along a first direction and a second direction, respectively. The ratio of the first dimension and the second dimension is in the range of 0.8-1.5. The first direction is parallel to the direction of movement of the test probe relative to the substrate, and the second direction is perpendicular to the first direction.

[0016] Here, the extension can provide support for the contact part. By setting the ratio of the first dimension and the second dimension of the extension within a reasonable range, and while meeting the testing and connection requirements, the second dimension is increased to improve the bending resistance of the extension, which helps to improve the structural stability of the extension, reduce the deviation of the test probe, and thus improve the accuracy of the test results. In addition, setting the second dimension to be larger can increase the cross-sectional area of ​​the test probe, thereby improving its conductivity and reducing defocusing.

[0017] In one possible implementation of this application, the contact portion includes a main structure and a wear-resistant layer covering the main structure, wherein the hardness of the wear-resistant layer is greater than the hardness of the main structure.

[0018] Here, by providing a wear-resistant layer at the contact point, the high-hardness wear-resistant layer is not easily worn even when in contact with the semiconductor under test, thereby improving the service life of the contact point.

[0019] In one possible implementation of this application, the testing device further includes a housing connected to the substrate, the housing having a receiving cavity and a through hole; in a first position, the test probe is received in the receiving cavity; in a second position, at least a portion of the test probe passes through the through hole.

[0020] Here, by setting up a housing, the test probe is housed in the housing cavity when in the first position. The housing provides protection for the test probe and also reduces the possibility of the test probe interfering with other components when not in use.

[0021] In one possible implementation of this application, the housing includes a structural surface with a through hole, the structural surface being flush with the bearing surface, and the housing being fixedly connected to the base.

[0022] Here, the structural surface of the housing is flush with the bearing surface. When the semiconductor under test is placed on the bearing surface, the structural surface can also support the semiconductor under test so that the semiconductor under test can be subjected to balanced force. In addition, the fixed connection between the housing and the substrate makes it easy to maintain the flatness of the structural surface and the bearing surface.

[0023] In one possible implementation of this application, the testing device further includes a buffer element disposed between the test probe and the substrate, and the buffer element elastically deforms at least along the direction of movement of the test probe relative to the substrate.

[0024] Here, by setting up a buffer, even if the test probe collides with the semiconductor under test, the impact can be buffered in time by the elastic deformation of the buffer, reducing the force and wear on the test probe and the semiconductor under test. Attached Figure Description

[0025] Figure 1This is a schematic diagram of the test probe in the first position in the test apparatus provided in the embodiments of this application;

[0026] Figure 2 This is a schematic diagram of the test probe in the second position in the test apparatus provided in the embodiments of this application;

[0027] Figure 3 This is a schematic diagram of the connection of the first detection circuit in the testing device provided in the embodiments of this application;

[0028] Figure 4 This is a schematic diagram of the connection of the second detection circuit in the testing device provided in the embodiments of this application;

[0029] Figure 5 This is a schematic diagram showing the dimensions of the test probe in the testing apparatus provided in the embodiments of this application;

[0030] Figure 6 This is a schematic diagram of the structure of the housing in the testing device provided in the embodiments of this application;

[0031] Figure 7 This is a cross-sectional view of the test probe in the test apparatus provided in the embodiments of this application.

[0032] Figure label:

[0033] 100-Substrate; 110-Bearing surface; 200-Test component; 210-Test probe; 211-Contact portion; 211a-Main structure; 211b-Wear-resistant layer; 212-Extension portion; 220-Drive component; 230-First detection circuit; 231-Voltage sensing component; 232-Processor; 240-Second detection circuit; 300-Housing; 310-Receiving cavity; 320-Through hole; 330-Structural surface; 400-Semiconductor under test; F10-First direction; F20-Second direction; H10-First dimension; H20-Second dimension. Detailed Implementation

[0034] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the specific technical solutions of this application will be further described in detail below with reference to the accompanying drawings of the embodiments of this application. The following embodiments are used to illustrate this application, but are not intended to limit the scope of this application.

[0035] In the embodiments of this application, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the embodiments of this application, unless otherwise stated, "multiple" means two or more.

[0036] Furthermore, in the embodiments of this application, directional terms such as "upper," "lower," "left," and "right" are defined relative to the positions in which the components are schematically placed in the accompanying drawings. It should be understood that these directional terms are relative concepts, used for relative description and clarification, and can change accordingly depending on the position of the components in the accompanying drawings.

[0037] In the embodiments of this application, unless otherwise explicitly specified and limited, the term "connection" should be interpreted broadly. For example, "connection" can be a fixed connection, a detachable connection, or an integral part; it can be a direct connection or an indirect connection through an intermediate medium.

[0038] In embodiments of this application, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes that element.

[0039] In the embodiments of this application, the terms "exemplary" or "for example" are used to indicate that something is an example, illustration, or description. Any embodiment or design that is described as "exemplary" or "for example" in the embodiments of this application should not be construed as being more preferred or advantageous than other embodiments or design. Specifically, the use of the terms "exemplary" or "for example" is intended to present the relevant concepts in a specific manner.

[0040] This application provides a testing device for testing a semiconductor under test, which may be a silicon wafer or the like. The testing device can be used to test the electrical parameters, physical parameters, dimensional parameters, etc. of the silicon wafer. For example, the testing device is used for measuring the feature dimensions of the silicon wafer, and the testing device may be a Critical Dimension Scanning Electron Microscopy (CDSEM).

[0041] In some technical solutions, the testing device includes a housing and a test probe. The test probe is housed within the housing and can extend relative to it. Both the housing and the test probe are movable and can be reset by elastic force. During the testing of the semiconductor under test (SUT), the SUT presses the housing down under gravity, causing the housing to descend so that the test probe can extend and contact the SUT. The SUT and the test probe, under the influence of gravity and elastic force, come into contact with each other, creating a strong interaction force. This interaction can easily lead to wear and damage to the SUT, and also to wear and damage to the test probe, reducing its conductivity and thus affecting the test results. For example, the test probe may be unable to conduct away the charge on the surface of the SUT, resulting in image defocusing during measurement. Furthermore, wear and tear on the SUT and the test probe can easily generate debris particles, adversely affecting the testing environment of the SUT.

[0042] Reference Figure 1 and Figure 2 The testing apparatus provided in this application includes a substrate 100 and a testing component 200. The substrate 100 is provided with a bearing surface 110 for bearing a semiconductor under test 400. The testing component 200 includes a test probe 210 and a driving member 220. The test probe 210 can move relative to the substrate 100 to a first position and a second position. In the first position, the test probe 210 is away from the bearing surface 110. In the second position, the test probe 210 is close to the bearing surface 110 and can be electrically connected to the semiconductor under test 400. The driving member 220 is connected to the substrate 100 and is used to drive the test probe 210 to move relative to the substrate 100.

[0043] Using the technical solution of this application, the substrate 100 provides a mounting base for the test component 200 and the driver 220. The substrate 100 is also provided with a bearing surface 110 for placing the semiconductor under test 400. The test component 200 includes a test probe 210, which is used to electrically connect to the semiconductor under test 400 so as to detect the characteristics of the semiconductor under test 400.

[0044] Based on this, the test assembly 200 includes a test probe 210 and a drive unit 220. The test probe 210 can move relative to the substrate 100 to a first position and a second position. In the first position, the test probe 210 is away from the support surface 110, and in the second position, the test probe 210 is close to the support surface 110 and can be electrically connected to the semiconductor under test 400. In other words, the test probe 210 measures the semiconductor under test 400 in the second position. The drive unit 220 is used to drive the test probe 210 to move relative to the substrate 100, so as to realize the switching of the test probe 210 between the first position and the second position. Since the drive unit 220 drives the test probe 210 closer to the semiconductor under test 400 and maintains the relative position of the test probe 210 and the semiconductor under test 400, the interaction force between the semiconductor under test 400 and the test probe 210 is small, which is less likely to cause wear on the semiconductor under test 400 and the test probe 210, thus protecting the semiconductor under test 400, and also improving the service life of the test probe 210, reducing the adverse effects of wear on the test results.

[0045] Compared with the related technologies where the semiconductor under test 400 and the test probe 210 rely on elastic force to abut against each other, the test device of this application is less likely to damage the semiconductor under test 400, has a long service life, and has high measurement accuracy.

[0046] In some examples, the substrate 100 is used to support the semiconductor under test 400, and the supporting surface 110 of the substrate 100 can be a surface facing away from the ground. In some examples, the substrate 100 may include a chuck for clamping and fixing the semiconductor under test 400 relative to the substrate 100.

[0047] In some examples, the substrate 100 includes a movable support member that can extend or retract relative to the bearing surface 110. The semiconductor under test (DUT) 400 is placed on the support member, and the support member moves the DUT 400 closer to or further away from the bearing surface 110. It is understood that the DUT 400 on the bearing surface 110 can be electrically connected to the test probe 210.

[0048] In some examples, the testing apparatus also includes a vacuum chamber, in which both the substrate 100 and the test component 200 are housed, thereby reducing the influence of the external environment on the test results. In some examples, the testing apparatus is integrated with the processing apparatus, allowing testing to be performed during the processing of the semiconductor under test 400.

[0049] In some examples, the trajectory of the test probe 210 relative to the substrate 100 can be a straight line, an arc, etc., and the direction of movement of the test probe 210 can form an acute angle, a right angle, or an obtuse angle with the bearing surface 110. For example, the trajectory of the test probe 210 is a straight line and is perpendicular to the bearing surface 110. In other words, the test probe 210 reciprocates along the direction perpendicular to the bearing surface 110 under the drive of the drive member 220.

[0050] In some examples, the test probe 210 at the first position and the second position are located on the same side of the bearing surface 110. When the test probe 210 is in the first position, the minimum distance between the test probe 210 and the bearing surface 110 is the first distance. When the test probe 210 is in the second position, the minimum distance between the test probe 210 and the bearing surface 110 is the second distance. The first distance is greater than or equal to 0, and the second distance is greater than the first distance.

[0051] In other examples, the test probe 210 in the first position and the second position are located on different sides of the carrier surface 110. For example, in the case of the first position, the test probe 210 is located on the side of the carrier surface 110 facing the semiconductor under test 400; in the case of the second position, the test probe 210 is located on the side of the carrier surface 110 away from the semiconductor under test 400.

[0052] It should be noted that the test probe 210 can be electrically connected to the semiconductor under test 400 at the second position. This can be achieved through physical contact between the test probe 210 and the semiconductor under test 400, or through the gaseous medium between the test probe 210 and the semiconductor under test 400.

[0053] In some examples, the drive unit 220 can be a drive unit 220 with a rotating output shaft, such as a motor or a rotary cylinder, or a drive unit 220 with a linear output shaft, such as a hydraulic cylinder, a pneumatic cylinder, or an electric telescopic rod. The motor can be a servo motor, a stepper motor, or the like.

[0054] For example, the drive unit 220 is a servo motor, which can achieve precise speed and position control in order to accurately control the movement and braking of the test probe 210, and precisely stop the test probe 210 in the second position, thereby reducing the impact and wear on the test probe 210 and the semiconductor under test 400.

[0055] The servo motor rotates according to the pulse signal. For each pulse signal received, the servo motor rotates by a corresponding angle, thereby driving the test probe 210 to move a corresponding distance. By adjusting the pulse signal, the movement of the test probe 210 can be precisely controlled.

[0056] In some embodiments, the test probe 210 is directly connected to the output end of the drive member 220. In other embodiments, the test probe 210 is indirectly connected to the drive member 220 via a transmission mechanism, which may be one or more combinations of a gear mechanism, a rack and pinion mechanism, a cam mechanism, a ratchet mechanism, a Geneva wheel mechanism, a worm gear mechanism, a ball screw mechanism, a belt drive mechanism, a chain drive mechanism, and a linkage mechanism. For example, a rack and pinion mechanism is provided between the test probe 210 and the drive member 220.

[0057] In some examples, the drive element 220 is fixed to the substrate 100 by means of snap-fit, bonding, welding, fastener connection, etc. The test probe 210 can be connected to both the drive element 220 and the substrate 100, with the substrate 100 providing guidance for the test probe 210; alternatively, the test probe 210 can be connected to the drive element 220 without being connected to the substrate 100, resulting in a simpler structure and making it easier for the test probe 210 to be precisely driven by the drive element 220.

[0058] Reference Figure 3 In some embodiments of this application, the test component 200 further includes a first detection circuit 230, which is used to determine that the test probe 210 has moved to a second position; the drive member 220 is electrically connected to the first detection circuit 230, and the drive member 220 brakes the test probe 210 based on the detection result of the first detection circuit 230.

[0059] By applying the technical solution of this application, a first detection circuit 230 is set up to determine whether the test probe 210 has moved to the second position. The driving unit 220 brakes the test probe 210 in time based on the detection result of the first detection circuit 230, thereby reducing the possibility of the test probe 210 colliding with the semiconductor under test 400 and making it easier for the test probe 210 to accurately stop at the second position.

[0060] In some examples, the first detection circuit 230 may include a position sensor, a proximity switch, etc., to determine whether the test probe 210 has moved to the second position by detecting the position of the test probe 210 relative to the substrate 100; in other examples, the first detection circuit 230 electrically connects the test probe 210 and the semiconductor under test 400, and determines whether the test probe 210 has moved to the second position by detecting the change in electrical parameters between the test probe 210 and the semiconductor under test 400.

[0061] In some examples, when the first detection circuit 230 detects that the test probe 210 has moved to the second position, or that the test probe 210 is close to the second position (e.g., when the drive unit 220 can move to the second position by inertia after braking), a braking signal is sent to the drive unit 220 so that the drive unit 220 can brake the test probe 210 to the second position in a timely manner.

[0062] Reference Figure 3 In some embodiments of this application, the first detection circuit 230 includes a voltage sensor 231 and a processor 232. The voltage sensor 231 is used to detect the voltage applied by the semiconductor under test 400 to the test probe 210, and the processor 232 determines the second position of the test probe 210 based on the voltage.

[0063] By applying the technical solution of this application, the voltage sensing element 231 can detect the voltage of the semiconductor under test 400 acting on the test probe 210, and the processor 232 determines the position of the test probe 210 based on the voltage. The structure is simple and has high accuracy.

[0064] In some examples, the first detection circuit 230 includes electronic components such as sensors, analog-to-digital converters, amplifiers, filters, protectors, and switching devices.

[0065] In some examples, the voltage sensing element 231 can be a device that directly or indirectly measures voltage, such as a capacitive voltage sensor, a resistive voltage sensor, or an optocoupler voltage sensor. The processor 232 is electrically connected to the voltage sensing element 231 and the drive element 220 respectively. The processor 232 determines the position of the test probe 210 based on the voltage detected by the voltage sensing element 231. For example, when the voltage sensing element 231 detects that the voltage of the semiconductor under test 400 acting on the test probe 210 is within a preset range, the processor 232 determines that the test probe 210 moves to a second position and controls the drive element 220 to brake. The preset range can be determined according to the actual working conditions.

[0066] Reference Figure 4 In some embodiments of this application, the test component 200 further includes a second detection circuit 240, which is used to detect the relative position of the semiconductor under test 400 and the substrate 100; the drive component 220 drives the test probe 210 to move relative to the substrate 100 based on the detection result of the second detection circuit 240.

[0067] By applying the technical solution of this application, the second detection circuit 240 can detect the relative position of the semiconductor under test 400 and the substrate 100. In other words, the second detection circuit 240 is used to determine whether the semiconductor under test 400 is placed on the substrate 100. The driving unit 220 controls the test probe 210 to move relative to the substrate 100 based on the detection result of the second detection circuit 240. This is more intelligent and also helps to reduce test preparation time and improve test efficiency.

[0068] In some examples, the second detection circuit 240 includes sensors such as position sensors and proximity switches to detect the position of the semiconductor under test 400 relative to the substrate 100. It can directly detect the positional relationship between the semiconductor under test 400 and the substrate 100, or it can indirectly determine the positional relationship between the semiconductor under test 400 and the substrate 100 through the positional state of the support.

[0069] In some examples, the second detection circuit 240 detects that the semiconductor under test 400 is placed on the carrier surface 110, determines that testing is required, and sends a proximity signal to the drive unit 220, controlling the drive unit 220 to drive the test probe 210 from a first position to a second position. When the second detection circuit 240 detects that the semiconductor under test 400 separates from the carrier surface 110, determines that the test is complete, and sends a distance signal to the drive unit 220, controlling the drive unit 220 to drive the test probe 210 from the second position to the first position.

[0070] For example, the second detection circuit 240 determines that the substrate 100 has the semiconductor under test 400 placed on it, the servo motor rotates by a corresponding angle based on the signal of the second detection circuit 240, driving the test probe 210 to move by a corresponding stroke, the first detection circuit 230 determines that the test probe 210 has reached the second position, and the drive unit 220 stops rotating based on the signal of the first detection circuit 230, thereby holding the test probe 210 in the second position.

[0071] Reference Figure 5 and Figure 6 In some embodiments of this application, the test probe 210 includes a contact portion 211. In a second position, the contact portion 211 abuts against the semiconductor under test 400. The surface of the contact portion 211 is an arc-shaped surface; or, the axial cross-sectional profile of the contact portion 211 is set with an obtuse angle.

[0072] By applying the technical solution of this application, the surface of the contact portion 211 of the test probe 210 is set as an arc-shaped surface or the axial cross-sectional profile is set as an obtuse angle, which helps to improve the impact resistance and the contact surface is relatively smooth, thereby reducing wear and extending the service life of the test probe 210.

[0073] In some examples, the contact portion 211 of the test probe 210 is located at the end of the test probe 210 away from the drive member 220. When the test probe 210 is in the second position, at least a portion of the outer surface of the contact portion 211 contacts the semiconductor under test 400 so that the semiconductor under test 400 conducts current into the test probe 210.

[0074] In some examples, the surface of the contact portion 211 is an arcuate surface, which can be a single-curvature arcuate surface (bent along one direction while extending flat in other directions); the arcuate surface can also be a multi-curvature arcuate surface (bent along at least two different directions, such as a sphere). The arcuate surface is convex, in other words, the arcuate surface protrudes in the direction toward the bearing surface 110.

[0075] In other examples, the axial cross-sectional profile of the contact portion 211 is obtuse. In other words, when the contact portion 211 is cut along its axial cross-section (which can be parallel to the direction of movement of the test probe 210), the cross-section of the contact portion 211 is conical, and the included angle between the two inclined sides is greater than 90 degrees and less than 180 degrees. For example, the included angle between the two inclined sides is 120 degrees, 150 degrees, etc.

[0076] Reference Figure 5 In some embodiments of this application, the test probe 210 further includes an extension 212, which is connected between the contact portion 211 and the drive member 220. The extension 212 has a first dimension H10 and a second dimension H20 along a first direction F10 and a second direction F20, respectively. The ratio of the first dimension H10 to the second dimension H20 is in the range of 0.8-1.5. The first direction F10 is parallel to the direction of movement of the test probe 210 relative to the substrate 100, and the second direction F20 is perpendicular to the first direction F10.

[0077] By applying the technical solution of this application, the extension portion 212 can provide support for the contact portion 211. By setting the ratio of the first dimension H10 and the second dimension H20 of the extension portion 212 within a reasonable range, while meeting the testing and connection requirements, increasing the second dimension H20 improves the bending resistance of the extension portion 212, which helps to improve the structural stability of the extension portion 212, reduces the deviation of the test probe 210, and thus improves the accuracy of the test results. In addition, setting the second dimension H20 to be larger can increase the cross-sectional area of ​​the test probe 210, thereby improving its conductivity and reducing the defocusing phenomenon.

[0078] In some examples, the cross-section of the extension 212 (which can be parallel to the bearing surface 110) can be a regular or irregular shape such as a circle, ellipse, square, triangle, or rhombus. For example, the cross-section of the extension 212 is circular; in other words, the extension 212 is a cylindrical structure. Correspondingly, the contact portion 211 can be configured as a conical structure.

[0079] In some examples, the first dimension H10 of the extension 212 along the first direction F10 refers to the smallest dimension passing through the geometric center of the cross-section of the extension 212. In one example, the cross-section of the extension 212 is elliptical, and the first dimension H10 is the dimension in the direction of the minor axis; in another example, the cross-section of the extension 212 is circular, and the first dimension H10 is the dimension in any radial direction.

[0080] In some examples, the second dimension H20 of the extension 212 along the second direction F20 can be the axial dimension of the extension 212. The ratio of the first dimension H10 to the second dimension H20 is greater than or equal to 0.8 and less than or equal to 1.5. For example, the ratio of the first dimension H10 to the second dimension H20 is 0.8, 1.0, 1.2, 1.5, etc.

[0081] Reference Figure 7 In some embodiments of this application, the contact portion 211 includes a main structure 211a and a wear-resistant layer 211b covering the main structure 211a, wherein the material hardness of the wear-resistant layer 211b is greater than the material hardness of the main structure 211a.

[0082] By applying the technical solution of this application, by providing a wear-resistant layer 211b in the contact portion 211, the high-hardness wear-resistant layer 211b is not easily worn even when in contact with the semiconductor 400 under test, thereby improving the service life of the contact portion 211.

[0083] In some examples, the wear-resistant layer 211b can be a structural layer connected to the outer surface of the main structure 211a, and the two can be bonded, welded, threaded, or connected together; in other examples, the wear-resistant layer 211b can be a coating, plating, paint, or other layer disposed on the outer surface of the main structure 211a.

[0084] In some examples, the wear-resistant layer 211b can be composed of a composite of a wear-resistant material and a conductive material. The conductive material can be a metal or graphite, while the wear-resistant material can be diamond, ceramic, cemented carbide, engineering plastics, etc. This improves the wear resistance of the wear-resistant layer 211b while maintaining conductivity in contact with the semiconductor under test 400.

[0085] Reference Figure 5 and Figure 6 In some embodiments of this application, the testing device further includes a housing 300 connected to the base 100, the housing 300 having a receiving cavity 310 and a through hole 320; in a first position, the test probe 210 is received in the receiving cavity 310; in a second position, at least a portion of the test probe 210 passes through the through hole 320.

[0086] By applying the technical solution of this application, by setting up a housing 300, the test probe 210 is housed in the receiving cavity 310 of the housing 300 when in the first position. The housing 300 provides protection for the test probe 210 and can also reduce the possibility of the test probe 210 interfering with other components when not in use.

[0087] In some examples, the housing may be made of insulating material such as rubber, and a receiving cavity 310 is formed inside the housing to house the test probe 210, the drive member 220 and the corresponding transmission mechanism; in other examples, the receiving cavity 310 is also provided with a communication hole through which the test probe 210 passes to connect to the drive member 220.

[0088] In some examples, the projection of the test probe 210 along its axial direction overlaps with the projection of the via 320, and the test probe 210 contacts the wall of the via 320. The inner wall of the via 320 can provide guidance for the test probe 210, reducing the possibility of the test probe 210 skewing. In other examples, the projection of the via 320 is larger than the projection of the test probe 210, and there is a gap between the test probe 210 and the inner wall of the via 320 so that the drive member 220 can drive the test probe 210 to move.

[0089] In some examples, in the first position, the test probe 210 is housed in the receiving cavity 310 and protected by the housing 300. In the second position, the contact portion 211 of the test probe 210 passes through the through hole 320 and extends to the outside of the housing 300 to contact the semiconductor under test 400.

[0090] Reference Figure 6 In some embodiments of this application, the housing 300 includes a structural surface 330 with a through hole 320, the structural surface 330 is flush with the bearing surface 110, and the housing 300 is fixedly connected to the base 100.

[0091] By applying the technical solution of this application, the structural surface 330 of the housing 300 is flush with the bearing surface 110. When the semiconductor under test 400 is placed on the bearing surface 110, the structural surface 330 can also support the semiconductor under test 400 so that the semiconductor under test 400 can be subjected to balanced force. In addition, the fixed connection between the housing 300 and the substrate 100 makes it easy to maintain the flatness of the structural surface 330 and the bearing surface 110.

[0092] It should be noted that "flush with structural surface 330 and bearing surface 110" means that the two are parallel to each other, and the extension surface of one of them passes through the other. In other words, when the semiconductor under test 400 is in contact with one of the structural surface 330 and the bearing surface 110, it also maintains contact with the other.

[0093] In some examples, the fixed connection between the housing 300 and the base 100 can be welding, bonding, integral molding, interference fit, etc. In some examples, the housing 300 is located on the outer or inner periphery of the base 100; in other examples, the base 100 has a receiving hole, and the housing 300 is received in the receiving hole.

[0094] In some embodiments of this application, the testing device further includes a buffer member disposed between the test probe 210 and the substrate 100, and the buffer member elastically deforms at least along the direction of movement of the test probe 210 relative to the substrate 100.

[0095] By applying the technical solution of this application and setting a buffer, even if the test probe 210 collides with the semiconductor under test 400, the impact can be buffered in time by the elastic deformation of the buffer, thereby reducing the force and wear on the test probe 210 and the semiconductor under test 400.

[0096] In some examples, the buffer can be an elastic structural component such as a spring or leaf spring; in other examples, the buffer can be an elastic material component such as a rubber component or an elastic plastic component; or, the buffer can be a damping component such as a hydraulic damper or an electromagnetic damper.

[0097] In some examples, the connection between the test probe 210, the substrate 100, and the buffer can be abutting, snapping, bonding, welding, etc. For example, one end of the buffer along the first direction F10 abuts against the test probe 210, and the other end of the buffer along the first direction F10 abuts against the substrate 100.

[0098] In some examples, a guide is also included to guide or limit the buffer, the guide extending and providing guidance along the direction of movement of the test probe 210 relative to the substrate 100. The buffer is sleeved on the outer periphery of the guide, or the buffer is received within a guide groove formed by the guide. For example, the buffer is sleeved on the test probe 210, with the test probe 210 providing guidance and limiting for the buffer, thus achieving functional reuse of the test probe 210 and helping to simplify the structure.

[0099] In one possible embodiment of this application, the testing device is used to test the feature dimensions of the semiconductor 400 under test. The testing device includes a substrate 100 and a testing component 200. The substrate 100 is provided with a bearing surface 110 for bearing the semiconductor 400 under test. The testing component 200 includes a housing 300, a test probe 210, and a drive member 220. The housing 300 and the drive member 220 are both connected to the substrate 100. The test probe 210 is housed in the receiving cavity 310 of the housing 300. The outer surface of the contact portion 211 of the test probe 210 is a convex arc-shaped surface, and the contact portion 211 is provided with a wear-resistant layer 211b. The drive member 220 is a servo motor. The test probe 210 and the drive member 220 are also connected to a first detection circuit 230 and a second detection circuit 240. The first detection circuit 230 can detect the voltage applied by the semiconductor 400 under test to the test probe 210.

[0100] During the test, the semiconductor under test 400 is sent into the vacuum chamber of the test device and placed on the support. The support retracts relative to the substrate 100, and the semiconductor under test 400 is placed on the bearing surface 110. When the second detection circuit 240 determines that the semiconductor under test 400 is in place, the driving element 220 drives the test probe 210 to move from the first position to the second position. When the first detection circuit 230 determines that the voltage of the test probe 210 meets the test requirements, the driving element 220 brakes the test probe 210, precisely stopping the test probe 210 at the second position. The test probe 210 measures the semiconductor under test 400. When the measurement is completed, the driving element 220 drives the test probe 210 to move to the first position, thereby storing it in the receiving cavity 310 of the housing 300.

[0101] Since the testing device in this embodiment drives the test probe 210 through the drive component 220 and is provided with a wear-resistant layer 211b and a first detection circuit 230, it can effectively extend the service life of the test probe 210, reduce the wear of the test probe 210 on the semiconductor 400 under test, reduce the test error caused by wear, improve the accuracy of the test results, and also reduce wear debris in the testing device. In addition, the servo motor responds quickly to the control signal and can achieve precise position control.

[0102] The sequence numbers of the embodiments in this application are for descriptive purposes only and do not represent the superiority or inferiority of the embodiments. The above are merely preferred embodiments of this application and do not limit the patent scope of this application. Any equivalent structural or procedural transformations made based on the content of this application's specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the patent protection scope of this application.

Claims

1. A testing device, characterized in that, include: The substrate has a bearing surface for supporting the semiconductor under test. A test assembly includes a test probe and a driver. The test probe is movable relative to the substrate to a first position and a second position. In the first position, the test probe is away from the support surface. In the second position, the test probe is close to the support surface and is electrically connected to the semiconductor under test. The driver is connected to the substrate and is used to drive the test probe to move relative to the substrate.

2. The testing apparatus according to claim 1, characterized in that, The test assembly further includes a first detection circuit, which is used to determine that the test probe has moved to the second position; The driving element is electrically connected to the first detection circuit, and the driving element actuates the test probe based on the detection result of the first detection circuit.

3. The testing apparatus according to claim 2, characterized in that, The first detection circuit includes a voltage sensor and a processor. The voltage sensor is used to detect the voltage applied by the semiconductor under test to the test probe, and the processor determines the movement of the test probe to the second position based on the voltage.

4. The testing apparatus according to claim 1, characterized in that, The test assembly further includes a second detection circuit, which is used to detect the relative position of the semiconductor under test and the substrate. The driving element drives the test probe to move relative to the substrate based on the detection result of the second detection circuit.

5. The testing apparatus according to any one of claims 1 to 4, characterized in that, The test probe includes a contact portion, which abuts against the semiconductor under test at the second position; The surface of the contact portion is an arc-shaped surface; or, the axial cross-sectional profile of the contact portion is set with an obtuse angle.

6. The testing apparatus according to claim 5, characterized in that, The test probe further includes an extension connected between the contact portion and the drive member. The extension has a first dimension and a second dimension along a first direction and a second direction, respectively, and the ratio of the first dimension to the second dimension is in the range of 0.8-1.

5. Wherein, the first direction is parallel to the direction of motion of the test probe relative to the substrate, and the second direction is perpendicular to the first direction.

7. The testing apparatus according to claim 5, characterized in that, The contact portion includes a main structure and a wear-resistant layer covering the main structure, wherein the hardness of the wear-resistant layer is greater than the hardness of the main structure.

8. The testing apparatus according to any one of claims 1 to 4, characterized in that, It also includes a housing, which is connected to the base, and the housing is provided with a receiving cavity and a through hole; In the first position, the test probe is received in the receiving cavity; in the second position, at least a portion of the test probe passes through the through-hole.

9. The testing apparatus according to claim 8, characterized in that, The housing includes a structural surface with the through hole, the structural surface being flush with the bearing surface, and the housing being fixedly connected to the base.

10. The testing apparatus according to any one of claims 1 to 4, characterized in that, It also includes a buffer element disposed between the test probe and the substrate, the buffer element being elastically deformable at least along the direction of movement of the test probe relative to the substrate.

Images