Power module and power device

Abstract

The utility model provides a power module and a power device. The power module comprises an insulating substrate, an upper bridge chip set, a lower bridge chip set, a first metal block, a second metal block and a plastic package shell. The upper bridge chip group and the lower bridge chip group are arranged on the insulating substrate, the upper bridge chip group comprises a plurality of upper bridge chips, and the plurality of upper bridge chips are connected in parallel through a first metal block; the lower bridge chip group comprises a plurality of lower bridge chips, and the plurality of lower bridge chips are connected in parallel through a second metal block; the plastic package shell wraps the insulating substrate, the upper bridge chip set and the lower bridge chip set, and at least one part of the first metal block and at least one part of the second metal block are exposed out of the plastic package shell and are respectively used as two power interfaces. According to the invention, the parasitic stray inductance of the module can be reduced, and the current sharing among a plurality of parallel chips can be improved.

Description

Technical Field

[0001] This application relates to the field of power electronics technology, and in particular to a power module and a power device. Background Technology

[0002] In a vehicle's electric drive assembly, a power module is used to convert the direct current (DC) supplied by the battery into alternating current (AC) power to power the drive motor. This DC-to-AC conversion is achieved through a power module with three types of power interfaces: DC positive (DC+), DC negative (DC-), and AC. Existing power modules, such as half-bridge molded power modules, typically use copper lead frames as power interfaces, which results in relatively high parasitic inductance in the power circuit from DC positive (DC+) to DC negative (DC-).

[0003] Furthermore, due to the limited active area of ​​existing SiC (silicon carbide) chips, a single SiC chip cannot carry a large current. Therefore, multiple SiC chips need to be connected in parallel to meet higher current demands, especially in new energy main drive inverters, where high-power applications are achieved through parallel connection of multiple chips. Current packaging solutions typically connect multiple chips in parallel using bonding wires, copper clips, copper or aluminum strips, etc. However, these connection methods result in differences in stray inductance between the parallel chips, leading to uneven current distribution. This uneven current distribution can cause individual chips to be subjected to excessive wear and stress over a prolonged period, eventually damaging them and consequently harming other parallel devices and the entire system. Utility Model Content

[0004] The purpose of this application is to provide a power module and power device that can reduce the parasitic inductance of the module itself and improve the current sharing among multiple parallel chips.

[0005] One aspect of this application provides a power module. The power module includes an insulating substrate, an upper-bridge chipset, a lower-bridge chipset, a first metal block, a second metal block, and a plastic encapsulation housing. The upper-bridge chipset and the lower-bridge chipset are disposed on the insulating substrate, wherein the upper-bridge chipset includes a plurality of upper-bridge chips, and the plurality of upper-bridge chips are connected in parallel via the first metal block; the lower-bridge chipset includes a plurality of lower-bridge chips, and the plurality of lower-bridge chips are connected in parallel via the second metal block; the plastic encapsulation housing covers the insulating substrate, the upper-bridge chipset, and the lower-bridge chipset, and at least a portion of both the first metal block and the second metal block are exposed outside the plastic encapsulation housing, serving as two power interfaces respectively.

[0006] Furthermore, a conductive layer is provided on the insulating substrate, the conductive layer including a first conductive region and a second conductive region spaced apart from each other, the first metal block including a main body block and a connecting block integrally extending from the main body block, wherein a plurality of upper bridge chips are symmetrically arranged in the first conductive region, the drains of the plurality of upper bridge chips are electrically connected to the first conductive region, the sources of the plurality of upper bridge chips are electrically connected to the main body block of the first metal block, and the connecting block of the first metal block is electrically connected to the second conductive region; a plurality of lower bridge chips are symmetrically arranged in the second conductive region, the drains of the plurality of lower bridge chips are electrically connected to the second conductive region, and the sources of the plurality of lower bridge chips are electrically connected to the second metal block.

[0007] Furthermore, the power module also includes a third metal block, wherein the third metal block is electrically connected to the first conductive area, and at least a portion of the third metal block protrudes from the upper surface of the plastic-encapsulated housing as another power interface.

[0008] Furthermore, the third metal block comprises two, which are disposed between the upper bridge chip group and the lower bridge chip group, and the two third metal blocks are respectively located on opposite sides of the connecting block of the first metal block.

[0009] Furthermore, the insulating substrate has a first end and a second end opposite to each other, and the conductive layer further includes a third conductive region and a fourth conductive region, the third conductive region and the fourth conductive region being located at the first end and the second end of the insulating substrate, respectively. The power module further includes a plurality of first conductive lines and a plurality of second conductive lines, wherein the gates of the plurality of upper bridge chips are electrically connected to the third conductive region through the plurality of first conductive lines; and the gates of the plurality of lower bridge chips are electrically connected to the fourth conductive region through the plurality of second conductive lines.

[0010] Furthermore, the power module further includes a third conductive line and a fourth conductive line, and the conductive layer further includes a fifth conductive region and a sixth conductive region, wherein the fifth conductive region is located between the first conductive region and the third conductive region, and the fifth conductive region is electrically connected to the source of one of the adjacent upper bridge chips through the third conductive line; the sixth conductive region is located between the second conductive region and the fourth conductive region, and the sixth conductive region is electrically connected to the source of one of the adjacent lower bridge chips through the fourth conductive line.

[0011] Furthermore, the power module also includes a plurality of signal terminals, at least a portion of each signal terminal being exposed outside the plastic-encapsulated housing. The plurality of signal terminals include an upper bridge gate terminal, an upper bridge source terminal, an upper bridge drain terminal, a lower bridge gate terminal, and a lower bridge source terminal. The upper bridge gate terminal and the lower bridge gate terminal are electrically connected to the third conductive region and the fourth conductive region, respectively. The upper bridge source terminal and the lower bridge source terminal are electrically connected to the fifth conductive region and the sixth conductive region, respectively. The upper bridge drain terminal is electrically connected to the first conductive region.

[0012] Furthermore, the upper surface of the first metal block has a protruding first protrusion, and the upper surface of the second metal block has a protruding second protrusion, wherein both the first protrusion and the second protrusion protrude beyond the upper surface of the plastic encapsulation housing.

[0013] Furthermore, the upper surface of the plastic encapsulation housing has a first slot and a second slot, wherein the openings of the first slot and the second slot respectively penetrate through the opposite first and second ends of the insulating substrate, the first slot exposing at least a portion of the surface of the first metal block outside the plastic encapsulation housing; and the second slot exposing at least a portion of the surface of the second metal block outside the plastic encapsulation housing.

[0014] Another aspect of this application provides a power device. The power device includes three power modules as described above, a heat sink substrate, and power terminals. The power terminals include a DC positive terminal, a DC negative terminal, and an AC terminal. All three power modules are connected to the heat sink substrate. The DC positive terminal is electrically connected to the third metal block exposed by the power module.

[0015] The DC negative terminal is electrically connected to the second metal block exposed by the power module; the AC terminal is electrically connected to the first metal block exposed by the power module. The insulating substrate has opposing first and second ends, the AC terminal extends from the first end of the insulating substrate, and both the DC positive and DC negative terminals extend from the second end of the insulating substrate, with overlapping portions.

[0016] The power modules and power devices of one or more embodiments of this application, by employing an integrated first metal block, not only can multiple upper-bridge chips be connected in parallel, but at least a portion of the first metal block can be directly exposed outside the plastic package to serve as an AC interface. By employing an integrated second metal block, not only can multiple lower-bridge chips be connected in parallel, but at least a portion of the second metal block can be directly exposed outside the plastic package to serve as a DC negative interface. Therefore, the power modules of this application are not only simple in structure and process but also have high reliability. Moreover, while reducing the parasitic inductance of the module, they improve the current sharing characteristics between the parallel upper-bridge chips and the parallel lower-bridge chips, and can also reduce product size and space occupation. Attached Figure Description

[0017] Figure 1 This is a perspective view of the power module according to the first embodiment of this application.

[0018] Figure 2 This is a perspective view of the power module of the first embodiment of this application after the power terminals are installed and the plastic casing is removed.

[0019] Figure 3 for Figure 2 The side view of the power module shown.

[0020] Figure 4 This is a top view of a chip mounted on an insulating substrate according to an embodiment of this application.

[0021] Figure 5 In order to be in Figure 4 The top view of the insulating substrate on which the metal block is mounted.

[0022] Figure 6 In order to be in Figure 5 A top view showing conductive lines mounted on an insulating substrate.

[0023] Figure 7 This is a perspective view of the power device of the first embodiment of this application when no power terminal is installed.

[0024] Figure 8 This is a perspective view of the power device according to the first embodiment of this application after the power terminals are installed.

[0025] Figure 9 for Figure 8 The power device shown is a side view.

[0026] Figure 10 This is a perspective view of the power module according to the second embodiment of this application.

[0027] Figure 11This is a perspective view of the power module according to the second embodiment of this application after the power terminals are installed and the plastic casing is removed.

[0028] Figure 12 for Figure 11 The power device shown is a side view.

[0029] Figure 13 This is a perspective view of the power module of the second embodiment of this application after the power terminals are installed.

[0030] Figure 14 This is a circuit topology diagram of the power device of this application. Detailed Implementation

[0031] Exemplary embodiments will now be described in detail, examples of which are illustrated in the accompanying drawings. When the following description relates to the drawings, unless otherwise indicated, the same numerals in different drawings denote the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with this application. Rather, they are merely examples of apparatuses consistent with some aspects of this application as detailed in the appended claims.

[0032] The power module and power device of this application will now be described in detail with reference to the accompanying drawings. Unless otherwise specified, the features of the following embodiments and implementations can be combined with each other.

[0033] First Embodiment

[0034] This application provides a power module 100. Figures 1 to 3 A schematic diagram of the power module 100 according to the first embodiment of this application is disclosed, wherein, Figure 1 A three-dimensional schematic diagram of the power module 100 is shown; Figure 2 A perspective view of the power module 100 after the power terminals are installed and the plastic casing 40 is removed is shown. Figure 3 Revealed Figure 2 The side view of the power module 100 shown.

[0035] like Figures 1 to 3 As shown, the power module 100 of this application includes an insulating substrate 10, an upper bridge chipset, a lower bridge chipset, a first metal block 31, a second metal block 32, and a plastic encapsulation housing 40. The insulating substrate 10 may be, for example, including but not limited to, a ceramic substrate.

[0036] Figure 4 A top view showing a chip mounted on an insulating substrate 10 according to one embodiment of this application is disclosed. Figure 4As shown, the upper bridge chipset and the lower bridge chipset are disposed on the insulating substrate 10. The upper bridge chipset includes multiple upper bridge chips 21, and the lower bridge chipset includes multiple lower bridge chips 22. Optionally, the multiple upper bridge chips 21 are symmetrically arranged on the insulating substrate 10, and the multiple lower bridge chips 22 are symmetrically arranged on the insulating substrate 10.

[0037] Optionally, the number of upper-bridge chips 21 and lower-bridge chips 22 may be an even number. For example, in the embodiment illustrated in this application, the upper-bridge chip group includes four upper-bridge chips 21, and the four upper-bridge chips 21 are arranged symmetrically from left to right; the lower-bridge chip group includes four lower-bridge chips 22, and the four lower-bridge chips 22 are arranged symmetrically from left to right. Of course, it is understood that the number of upper-bridge chips 21 included in the upper-bridge chip group and the number of lower-bridge chips 22 included in the lower-bridge chip group of this application are not limited to the four shown in the figures. Multiple chips can be set according to actual needs. Multiple upper-bridge chips 21 can be arranged symmetrically in two rows from left to right, and multiple lower-bridge chips 22 can also be arranged symmetrically in two rows from left to right.

[0038] Figure 5 Revealed in Figure 4 A top view showing a metal block further mounted on the insulating substrate 10. (See diagram below.) Figure 5 As shown, multiple upper bridge chips 21 can be connected in parallel through the first metal block 31; multiple lower bridge chips 22 can be connected in parallel through the second metal block 32.

[0039] like Figure 1 As shown, the plastic encapsulation housing 40 encapsulates the insulating substrate 10, the upper bridge chipset, and the lower bridge chipset. At least a portion of both the first metal block 31 and the second metal block 32 are exposed outside the plastic encapsulation housing 40, serving as two power interfaces. Specifically, the exposed first metal block 31 serves as the AC interface, and the exposed second metal block 32 serves as the DC negative interface.

[0040] The power module 100 of this application, by employing an integrated first metal block 31, not only enables parallel connection between multiple upper bridge chips 21, but also allows at least a portion of the first metal block 31 to be directly exposed outside the plastic casing 40 for use as an AC interface. By employing an integrated second metal block 32, not only enables parallel connection between multiple lower bridge chips 22, but also allows at least a portion of the second metal block 32 to be directly exposed outside the plastic casing 40 for use as a DC negative interface (DC-). Therefore, the power module 100 of this application is not only simple in structure and process but also has high reliability. Furthermore, while reducing module parasitic inductance, it improves the current sharing characteristics between the parallel upper bridge chips 21 and the parallel lower bridge chips 22, and also reduces product size and space occupation.

[0041] Combined with reference Figures 1 to 3 In the first embodiment of this application, the upper surface of the first metal block 31 has a protruding first protrusion 311; the upper surface of the second metal block 32 has a protruding second protrusion 321. Both the first protrusion 311 and the second protrusion 321 protrude beyond the upper surface of the plastic encapsulation housing 40, thereby exposing a portion of the first metal block 31 and the second metal block 32 outside the plastic encapsulation housing 40.

[0042] like Figure 4 and Figure 5 As shown, in some embodiments, the insulating substrate 10 is provided with a conductive layer, which includes a first conductive region 11 and a second conductive region 12 spaced apart from each other. The first metal block 31 includes a main body block 312 and a connecting block 313 integrally extending from the main body block 312. A first protrusion 311 protrudes from the upper surface of the main body block 312 of the first metal block 31.

[0043] Multiple bridge chips 21 are symmetrically arranged in the first conductive region 11. The drains (D) of the multiple bridge chips 21 are electrically connected to the first conductive region 11, and the sources (S) of the multiple bridge chips 21 are electrically connected to the main body block 312 of the first metal block 31. The connecting block 313 of the first metal block 31 is electrically connected to the second conductive region 12, thereby electrically connecting the first metal block 31 to the second conductive region 12. For example, the main body block 312 of the first metal block 31 can be cuboid, and the connecting block 313 is located in the middle of one side of the cuboid. The multiple bridge chips 21 are symmetrically and relatively uniformly distributed on the bottom surface of the main body block 312.

[0044] Multiple down-bridge chips 22 are symmetrically arranged in the second conductive region 12. The drains (D) of the multiple down-bridge chips 22 are electrically connected to the second conductive region 12, and the sources (S) of the multiple down-bridge chips 22 are electrically connected to the second metal block 32. For example, the second metal block 32 can be cuboid. The multiple down-bridge chips 22 are symmetrically and relatively uniformly distributed on the bottom surface of the second metal block 32.

[0045] In power modules with multiple chips connected in parallel, the differences in parasitic inductance between chips play an important role in the current sharing performance of the power module. Among them, the source parasitic inductance of the chip is located in both the chip's drive circuit and the chip's power circuit, and has the greatest impact on the current sharing performance of multiple chips connected in parallel. Even slight differences in the source parasitic inductance of different chips can cause significant differences in the dynamic current flowing through the chips during the switching process.

[0046] Compared to existing solutions that use copper strips and multiple bonding wires to connect the sources of multiple parallel chips, the power module 100 of this application connects the sources of multiple upper-bridge chips 21 together using a single first metal block 31 and connects the sources of multiple lower-bridge chips 22 together using a single second metal block 32. This greatly increases the interconnectivity of the sources of multiple parallel chips, thereby effectively reducing the dispersion of parasitic inductance of the sources of multiple parallel chips and achieving better current sharing performance during switching of multiple parallel chips. In addition, since the power module 100 of this application uses the form of the first metal block 31 and the second metal block 32, its cross-section is large. The parasitic inductance of the first metal block 31 and the second metal block 32 themselves is much lower than that of the copper strip or multiple parallel bonding wires. Therefore, the power module 100 of this application can greatly reduce the parasitic inductance of the module.

[0047] like Figure 5 As shown, in some embodiments, the power module 100 of this application further includes a third metal block 33. The third metal block 33 is electrically connected to the first conductive region 11, and, as... Figure 1 As shown, at least a portion of the third metal block 33 is exposed outside the plastic-encapsulated housing 40, serving as another power interface, namely the DC positive interface DC+. Optionally, as Figure 2 and Figure 3 As shown, the third metal block 33 is columnar, as... Figure 1 As shown, the upper surface of the third metal block 33 protrudes from the upper surface of the plastic-sealed housing 40.

[0048] In some embodiments, the third metal block 33 includes two third metal blocks 33, which are disposed between the upper bridge chipset and the lower bridge chipset, and the two third metal blocks 33 are respectively located on opposite sides of the connecting block 313 of the first metal block 31.

[0049] In addition, by providing a protruding first protrusion 311 on the upper surface of the first metal block 31 and a protruding second protrusion 321 on the upper surface of the second metal block 32, the AC terminal 71 and the DC negative terminal 72, which are electrically connected to the exposed surfaces of the first protrusion 311 of the first metal block 31 and the second protrusion 321 of the second metal block 32, can both be kept in a straight shape without having a bent structure. Therefore, the configuration of the AC terminal 71 and the DC negative terminal 72 can be simplified.

[0050] like Figure 2 and Figure 3As shown, the power module 100 of this application also includes power terminals, which include a DC positive terminal 73, a DC negative terminal 72, and an AC terminal 71. The DC positive terminal 73 has two connection portions. The AC terminal 71 is electrically connected to the AC interface of the power module 100, i.e., the surface of the first metal block 31 exposed outside the plastic casing 40; the DC negative terminal 72 is electrically connected to the DC negative interface of the power module 100, i.e., the surface of the second metal block 32 exposed outside the plastic casing 40; and the DC positive terminal 73 is electrically connected to the DC positive interface of the power module 100, i.e., the two connection portions of the DC positive terminal 73 are respectively electrically connected to the surfaces of the two third metal blocks 33 exposed outside the plastic casing 40.

[0051] The insulating substrate 10 has a first end and a second end opposite to each other. In some embodiments, the AC terminal 71 extends from the first end of the insulating substrate 10, and the DC positive terminal 73 and the DC negative terminal 72 extend from the second end of the insulating substrate 10, thereby enabling the DC positive terminal 73 and the DC negative terminal 72 to achieve a better stacked structure, and further enabling mutual inductance between the DC positive terminal 73 and the DC negative terminal 72, thereby further reducing the spurious inductance of the power module 100.

[0052] Understandably, since the power interface of the power module 100 of this application is exposed outside the plastic-encapsulated housing 40, the power terminals of the power module 100 can be installed without prior installation at the product manufacturing stage, and can be installed at the application stage. Furthermore, since the power terminals of the power module 100 can be installed after plastic encapsulation, there are no restrictions on the selection of power terminals. At the application stage, users can install power terminals of appropriate structural forms according to their own needs, thus providing users with greater flexibility and choice.

[0053] In some embodiments, the conductive layer further includes a third conductive region 13 and a fourth conductive region 14, which are located at the first end and the second end of the insulating substrate 10, respectively.

[0054] Figure 6 Revealed in Figure 5 A top view showing conductive lines mounted on the insulating substrate 10. (See figure) Figure 6 As shown, the power module 100 of this application also includes a plurality of first conductive lines 51 and a plurality of second conductive lines 52. The gates G of the plurality of upper bridge chips 21 can be electrically connected to the third conductive region 13 through the plurality of first conductive lines 51; the gates G of the plurality of lower bridge chips 22 can be electrically connected to the fourth conductive region 14 through the plurality of second conductive lines 52.

[0055] In some embodiments, the power module 100 of this application further includes a third conductive line 53 and a fourth conductive line 54. The conductive layer also includes a fifth conductive region 15 and a sixth conductive region 16.

[0056] The fifth conductive region 15 is located between the first conductive region 11 and the third conductive region 13, and the fifth conductive region 15 can be electrically connected to the source S of one of the adjacent upper bridge chips 21 via the third conductive line 53. The sixth conductive region 16 is located between the second conductive region 12 and the fourth conductive region 14, and the sixth conductive region 16 can be electrically connected to the source S of one of the adjacent lower bridge chips 22 via the fourth conductive line 54.

[0057] In some embodiments, the power module 100 of this application further includes a plurality of signal terminals. For example... Figure 1 As shown, at least a portion of each signal terminal is exposed outside the plastic-encapsulated housing 40.

[0058] like Figure 6 As shown, the multiple signal terminals include an upper bridge gate terminal 61, an upper bridge source terminal 62, an upper bridge drain terminal 63, a lower bridge gate terminal 64, and a lower bridge source terminal 65. The upper bridge gate terminal 61 and the lower bridge gate terminal 64 are electrically connected to the third conductive region 13 and the fourth conductive region 14, respectively; the upper bridge source terminal 62 and the lower bridge source terminal 65 are electrically connected to the fifth conductive region 15 and the sixth conductive region 16, respectively; and the upper bridge drain terminal 63 is electrically connected to the first conductive region 11.

[0059] This application also provides a power device 200. Figures 7 to 9 The illustration reveals a power device 200 according to a first embodiment of this application, wherein, Figure 7 A three-dimensional schematic diagram of the power device 200 without power terminals installed is shown. Figure 8 A three-dimensional schematic diagram of the power device 200 after the power terminals are installed is shown; Figure 9 Revealed Figure 8 Side view of the power device 200 shown.

[0060] like Figures 7 to 9 As shown, the power device 200 of the first embodiment of this application includes three power modules 100 as described in the first embodiment above, a heat dissipation substrate 80, and power terminals. The power terminals include a DC positive terminal 73, a DC negative terminal 72, and an AC terminal 71.

[0061] All three power modules 100 are connected to the heat sink 80. The first metal block 31, the second metal block 32, and the third metal block 33 exposed by the power module 100 serve as the AC interface, the DC negative interface DC-, and the DC positive interface DC+, respectively. The DC positive terminal 73 is electrically connected to the third metal block 33 exposed by the power module 100, i.e., the DC positive interface DC+ of the power module 100; the DC negative terminal 72 is electrically connected to the second metal block 32 exposed by the power module 100, i.e., the DC negative interface DC- of the power module 100; and the AC terminal 71 is electrically connected to the first metal block 31 exposed by the power module 100, i.e., the AC interface AC of the power module 100.

[0062] The insulating substrate 10 has opposing first and second ends. An AC terminal 71 extends from the first end of the insulating substrate 10, and both a DC positive terminal 73 and a DC negative terminal 72 extend from the second end of the insulating substrate 10. The DC positive terminal 73 and the DC negative terminal 72 have overlapping portions. This allows for better stacking of the DC positive terminal 73 and the DC negative terminal 72, thereby achieving mutual inductance and reducing module noise.

[0063] It is understood that the power terminals of this application can be installed on a single power module 100 after molding, or the power terminals of each power module 100 can be installed after the three power modules 100 are installed on the heat sink substrate 80. This application does not limit this.

[0064] Second Embodiment

[0065] Figures 10 to 12 The illustration reveals a power module 300 according to a second embodiment of this application, wherein, Figure 10 A three-dimensional schematic diagram of the power module 300 is shown. Figure 11 A three-dimensional schematic diagram of the power module 300 after the power terminals are installed and the plastic casing 40 is removed is shown. Figure 12 Revealed Figure 11 The power device 400 shown is a side view. Figures 10 to 12 As shown, the power module 300 of the second embodiment and Figures 1 to 3 The difference between the power module 100 of the first embodiment shown is that in the power module 300 of the second embodiment, the upper surface of the plastic encapsulation housing 40 has a first slot 41 and a second slot 42, and the slot openings of the first slot 41 and the second slot 42 respectively penetrate through the first end and the second end of the insulating substrate 10.

[0066] The first slot 41 exposes at least a portion of the surface of the first metal block 31 outside the plastic encapsulation housing 40; the second slot 42 exposes at least a portion of the surface of the second metal block 32 outside the plastic encapsulation housing 40.

[0067] In the power module 300 of the second embodiment, by forming a first slot 41 and a second slot 42 on the plastic-encapsulated housing 40, the upper surfaces of the first metal block 31 and the second metal block 32 can be flat surfaces. Furthermore, the openings of the first slot 41 and the second slot 42 respectively penetrate through the opposite first and second ends of the insulating substrate 10, so that the AC terminal 71 and the DC negative terminal 72, which are electrically connected to the exposed surfaces of the first metal block 31 and the second metal block 32 respectively, can both remain straight without having a bent structure. Therefore, the configuration of the AC terminal 71 and the DC negative terminal 72 can be simplified.

[0068] The power module 300 of the second embodiment has a structure similar to that of the power module 100 of the first embodiment. Please refer to the above description of the power module 100 of the first embodiment, and it will not be repeated here.

[0069] Figure 13 A perspective view of the power device 400 according to the second embodiment of this application after the power terminals are installed is shown. Figure 13 As shown, the power device 400 of the second embodiment includes three power modules 300 as described in the second embodiment.

[0070] The power device 400 of the second embodiment has a structure similar to that of the power device 200 of the first embodiment, and will not be described again here.

[0071] The power module 300 and power device 400 of the second embodiment have beneficial technical effects that are generally similar to those of the power module 100 and power device 200 of the first embodiment described above, so they will not be repeated here.

[0072] Figure 14 This is a circuit topology diagram of the power device 200 / 400 of this application. Figure 14As shown, the power device 200 / 400 includes three power modules 100 / 300. Each power module 100 / 300 forms a half-bridge structure, and the three power modules 100 / 300 form a full-bridge structure. In each power module 100 / 300, the DC positive interface DC+ is electrically connected to the drain D of multiple parallel-connected upper bridge chips 21; the source S of multiple parallel-connected upper bridge chips 21 is electrically connected to the drain D of multiple parallel-connected lower bridge chips 22; the DC negative interface DC- is electrically connected to the source S of multiple parallel-connected lower bridge chips 22; and the AC interface AC is electrically connected to the source S of the upper bridge chip 21 and the drain D of the lower bridge chip 22, respectively.

[0073] The power modules and power devices provided in the embodiments of this application have been described in detail above. Specific examples have been used to illustrate the power modules and power devices of this application. The descriptions of the embodiments above are only for helping to understand the core ideas of this application and are not intended to limit this application. It should be noted that those skilled in the art can make several improvements and modifications to this application without departing from the spirit and principles of this application, and all such improvements and modifications should fall within the protection scope of the appended claims.

Claims

1. A power module, characterized in that: It includes an insulating substrate, an upper bridge chipset, a lower bridge chipset, a first metal block, a second metal block, and a plastic encapsulation shell, wherein, The upper bridge chip group and the lower bridge chip group are disposed on the insulating substrate, wherein the upper bridge chip group includes a plurality of upper bridge chips, and the plurality of upper bridge chips are connected in parallel through the first metal block; the lower bridge chip group includes a plurality of lower bridge chips, and the plurality of lower bridge chips are connected in parallel through the second metal block; The plastic encapsulation housing encloses the insulating substrate, the upper bridge chipset, and the lower bridge chipset. Furthermore, at least a portion of both the first metal block and the second metal block are exposed outside the plastic encapsulation housing, serving as two power interfaces, respectively.

2. The power module as described in claim 1, characterized in that: The insulating substrate has a conductive layer, which includes a first conductive region and a second conductive region spaced apart from each other. The first metal block includes a main body block and a connecting block integrally extending from the main body block. Multiple bridge chips are symmetrically arranged in the first conductive region, the drains of the multiple bridge chips are electrically connected to the first conductive region, the sources of the multiple bridge chips are electrically connected to the main body of the first metal block, and the connecting block of the first metal block is electrically connected to the second conductive region. Multiple lower-bridge chips are symmetrically arranged in the second conductive region, the drains of the multiple lower-bridge chips are electrically connected to the second conductive region, and the sources of the multiple lower-bridge chips are electrically connected to the second metal block.

3. The power module as described in claim 2, characterized in that: It also includes a third metal block, in which, The third metal block is electrically connected to the first conductive area, and at least a portion of the third metal block protrudes from the upper surface of the plastic-encapsulated housing to serve as another power interface.

4. The power module as described in claim 3, characterized in that: The third metal block comprises two blocks, which are disposed between the upper bridge chip group and the lower bridge chip group, and are respectively located on opposite sides of the connecting block of the first metal block.

5. The power module as described in claim 2, characterized in that: The insulating substrate has a first end and a second end opposite to each other. The conductive layer further includes a third conductive region and a fourth conductive region, which are respectively located at the first end and the second end of the insulating substrate. The power module further includes a plurality of first conductive lines and a plurality of second conductive lines, wherein... The gates of the plurality of bridge chips are electrically connected to the third conductive region through a plurality of first conductive lines; The gates of the plurality of lower bridge chips are electrically connected to the fourth conductive region through a plurality of second conductive lines.

6. The power module as described in claim 5, characterized in that: The power module further includes a third conductive line and a fourth conductive line, and the conductive layer further includes a fifth conductive region and a sixth conductive region, wherein... The fifth conductive region is located between the first conductive region and the third conductive region, and the fifth conductive region is electrically connected to the source of one of the adjacent upper bridge chips through the third conductive line; The sixth conductive region is located between the second conductive region and the fourth conductive region, and the sixth conductive region is electrically connected to the source of one of the adjacent lower bridge chips through the fourth conductive line.

7. The power module as described in claim 6, characterized in that: The power module further includes multiple signal terminals, at least a portion of each signal terminal being exposed outside the plastic-encapsulated housing. The multiple signal terminals include an upper bridge gate terminal, an upper bridge source terminal, an upper bridge drain terminal, a lower bridge gate terminal, and a lower bridge source terminal. The upper bridge gate terminal and the lower bridge gate terminal are electrically connected to the third conductive region and the fourth conductive region, respectively; The upper bridge source terminal and the lower bridge source terminal are electrically connected to the fifth conductive region and the sixth conductive region, respectively; The upper bridge drain terminal is electrically connected to the first conductive region.

8. The power module as described in any one of claims 1 to 7, characterized in that: The upper surface of the first metal block has a protruding first protrusion, and the upper surface of the second metal block has a protruding second protrusion, wherein both the first protrusion and the second protrusion protrude beyond the upper surface of the plastic encapsulation shell.

9. The power module as described in any one of claims 1 to 7, characterized in that: The upper surface of the plastic-encapsulated housing has a first slot and a second slot, wherein, The openings of the first slot and the second slot respectively penetrate through the first and second opposite ends of the insulating substrate. The first slot exposes at least a portion of the surface of the first metal block outside the encapsulated housing; The second slot exposes at least a portion of the surface of the second metal block outside the plastic-encapsulated housing.

10. A power device, characterized in that: It includes three power modules as described in claim 3 or 4, a heat dissipation substrate, and power terminals, wherein the power terminals include a DC positive terminal, a DC negative terminal, and an AC terminal, wherein... All three power modules are connected to the heat dissipation substrate; The DC positive terminal is electrically connected to the third metal block exposed by the power module; The DC negative terminal is electrically connected to the second metal block exposed by the power module; The AC terminal is electrically connected to the first metal block exposed by the power module. The insulating substrate has a first end and a second end opposite to each other. The AC terminal extends from the first end of the insulating substrate, and the DC positive terminal and the DC negative terminal both extend from the second end of the insulating substrate. The DC positive terminal and the DC negative terminal have overlapping portions.

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