An ion implanter

Abstract

This application provides an ion implanter, including a vacuum chamber, a temperature probe, and a lead tube. The vacuum chamber contains a target disk for supporting a wafer. The temperature probe includes a temperature sensor, a metal shield, and a cable. The temperature sensor is a non-contact type, mounted on the inner wall of the vacuum chamber and aligned with the surface of the wafer supported on the target disk. The metal shield covers the outside of the temperature sensor to shield it from interference from the ion beam. The cable transmits power and signals to the temperature sensor. The lead tube, a tubular structure, extends through the vacuum chamber to lead the temperature probe cable to the outside of the vacuum chamber. This application's technical solution enables real-time, reliable, and accurate temperature monitoring of the wafer supported on the target disk, ensuring that operators can promptly obtain the wafer's true temperature status and take rapid action in case of abnormal temperature increases to prevent damage to the wafer.

Description

Technical Field

[0001] This application relates to the field of semiconductor manufacturing, and more specifically, to an ion implanter. Background Technology

[0002] In semiconductor manufacturing, ion implantation is a crucial step in wafer doping. An ion implanter, a commonly used ion implantation device, bombards a wafer with a high-energy ion beam, precisely implanting dopant ions into the wafer to alter its electrical properties. Ion implantation places extremely high demands on temperature control, as the wafer heats up rapidly under ion beam bombardment. Excessive wafer temperature can increase thermal stress, leading to warping, cracking, or even breakage, severely impacting wafer quality and performance and reducing product yield. Therefore, accurate temperature monitoring is essential for ensuring the stability and repeatability of the ion implantation process. Only by monitoring wafer temperature changes in real time can process parameters be adjusted promptly to ensure smooth production. Furthermore, high temperatures can damage the internal components of the ion implanter, shortening its lifespan and increasing maintenance costs and downtime. Therefore, real-time and accurate monitoring of wafer temperature changes during ion implantation is crucial for improving product quality, reducing production costs, extending equipment lifespan, and ensuring production efficiency.

[0003] However, due to the complex structure of the vacuum chamber in an ion implanter, the target disk drives the wafer to rotate at high speed within the chamber and simultaneously performs a reciprocating scan during operation, making it difficult to use contact temperature sensors to measure the wafer temperature. Existing temperature measurement methods primarily obtain the wafer temperature indirectly by detecting the temperature of the cooling water returning from the target disk. This method has several drawbacks, including but not limited to: high latency, as changes in the cooling water return temperature typically lag behind actual wafer temperature changes, preventing operators from obtaining the wafer's true temperature status in a timely manner and hindering rapid action in case of abnormal temperature increases, thus increasing the risk of wafer damage; and insufficient accuracy, as indirect temperature measurement inevitably introduces some error and cannot accurately reflect the temperature of the wafer surface, potentially affecting the accuracy of process control. Therefore, existing indirect temperature measurement methods fail to meet the high precision, high reliability, and real-time requirements of temperature control in semiconductor manufacturing, causing numerous difficulties and inconveniences in production. Utility Model Content

[0004] The purpose of this application is to provide an ion implanter that can perform real-time, reliable, and accurate temperature monitoring of the wafer carried on the target disk, ensuring that operators can obtain the true temperature status of the wafer in a timely manner, so as to take measures quickly when the temperature rises abnormally and avoid damage to the wafer.

[0005] This application provides an ion implanter, including a vacuum chamber, a temperature probe, and a lead tube. The vacuum chamber contains a target disk for supporting a wafer. The temperature probe includes a temperature sensor, a metal shield, and a cable. The temperature sensor is a non-contact type, mounted on the inner wall of the vacuum chamber and aligned with the surface of the wafer supported on the target disk. The metal shield covers the outside of the temperature sensor to shield it from interference from the ion beam. The cable transmits power and signals to the temperature sensor. The lead tube, which is tubular in structure, extends through the vacuum chamber to lead the temperature probe cable to the outside of the vacuum chamber.

[0006] In one feasible embodiment, the ion implanter also includes a probe holder fixedly mounted on the inner wall of the vacuum chamber, with a temperature sensor detachably connected to the probe holder.

[0007] In one feasible embodiment, the ion implanter also includes a wire clamp that securely attaches the temperature probe cable to the inner wall of the vacuum chamber.

[0008] In one feasible approach, multiple temperature probes are installed in a vacuum chamber, with each probe positioned on the same inner wall of the vacuum chamber.

[0009] In one feasible embodiment, the ion implanter also includes a controller located outside the vacuum chamber, which is connected to the temperature probe via a cable.

[0010] In one feasible embodiment, the ion implanter also includes an alarm connected to the controller. The alarm sounds when the temperature probe detects that the wafer temperature exceeds a preset value.

[0011] In one feasible embodiment, the ion implanter also includes a power supply located outside the vacuum chamber, which is electrically connected to the temperature probe via a cable.

[0012] In one feasible approach, the cable of the temperature probe is covered with a shielding layer to block interference from the ion beam.

[0013] In one feasible solution, a seal is provided in the channel of the lead tube to prevent external gas from entering the vacuum chamber.

[0014] Compared with the prior art, the beneficial effects of this application include at least the following:

[0015] This application provides an ion implanter whose temperature probe is directly aimed at the wafer surface during operation, enabling real-time and direct measurement of the wafer's temperature. Compared to traditional indirect methods (such as cooling water return temperature), this significantly improves the accuracy and real-time performance of temperature measurement, ensuring operators can promptly obtain the wafer's true temperature status and take swift action to prevent damage in case of abnormal temperature increases. The temperature probe uses a metal shielding shell, effectively shielding it from ion beam interference within the vacuum chamber, thus ensuring the accuracy and reliability of temperature measurement. Furthermore, the temperature probe is a non-contact temperature sensor fixed to the inner wall of the vacuum chamber, with its cable led out to the outside of the chamber via a lead tube. This effectively solves the problem that contact temperature sensors cannot be used on high-speed rotating and reciprocating scanning target disks, thereby achieving stable power and signal transmission. In summary, the ion implanter of this application can adapt to the complex environment within a vacuum chamber, achieving real-time and reliable wafer temperature measurement and effectively ensuring the smooth operation of the ion implantation process. Attached Figure Description

[0016] To more clearly illustrate the technical solutions of the embodiments of this application, the accompanying drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this application and should not be regarded as a limitation of the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0017] Figure 1 This is a schematic diagram of the structure of an ion implanter according to an embodiment of this application;

[0018] Figure 2 This is a three-dimensional schematic diagram of a vacuum chamber;

[0019] Figure 3 A three-dimensional schematic diagram of the temperature probe and probe holder;

[0020] Figure 4 This is a three-dimensional exploded view of the temperature probe and probe holder.

[0021] In the diagram: 1. Vacuum chamber; 2. Temperature probe; 3. Lead tube; 4. Probe bracket; 5. Controller; 6. Alarm; 7. Power supply; 101. Target plate; 102. Wafer; 201. Temperature sensor; 202. Metal shielding shell; 203. Cable; 401. First bracket; 402. Second bracket. Detailed Implementation

[0022] To make the objectives, technical solutions, and advantages of the embodiments of this application clearer, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. The components of the embodiments of this application described and shown in the accompanying drawings can generally be arranged and designed in various different configurations.

[0023] Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely to illustrate selected embodiments of the application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0024] like Figure 1 As shown, this application provides an ion implanter, including a vacuum chamber 1, a temperature probe 2, and a lead tube 3. The vacuum chamber 1 contains a target disk 101 for supporting the wafer.

[0025] The temperature probe 2 includes a temperature sensor 201, a metal shielding shell 202, and a cable 203. The temperature sensor 201 is a non-contact temperature sensor, disposed on the inner wall of the vacuum chamber 1 and aligned with the surface of the wafer 102 supported on the target disk 101. Specifically, the type of temperature sensor 201 includes, but is not limited to, infrared temperature sensors, microwave temperature sensors, and ultrasonic temperature sensors. An infrared temperature sensor is preferred, as it offers advantages such as fast response time (milliseconds or even shorter), high measurement accuracy (typically ±0.5℃ or higher), wide temperature range, strong resistance to electromagnetic interference, and small size, making it ideal for the complex environment within the vacuum chamber 1.

[0026] Because the vacuum chamber 1 is a high-vacuum environment, the ion beam will generate strong electromagnetic radiation and high-energy particles, which may cause distortion of the measurement signal of the temperature sensor 201, affecting the accuracy and reliability of temperature measurement. Figure 3 and Figure 4 As shown, a metal shielding shell 202 covers the outside of the temperature sensor 201 to shield it from interference from the ion beam. Specifically, the metal shielding shell 202 can be fixed to the outside of the temperature sensor 201 by fastening screws or welding, ensuring good contact between the two to achieve effective heat conduction and electromagnetic shielding. The metal shielding shell 202 is typically made of a metal material with high electrical and thermal conductivity, such as copper, aluminum, or stainless steel, to effectively shield electromagnetic interference and quickly dissipate the heat absorbed by the temperature sensor 201, preventing the temperature sensor 201 from being damaged by overheating.

[0027] Cable 203 is used for power and signal transmission. Preferably, the outer layer of cable 203 can be made of a high-temperature and corrosion-resistant material, such as polytetrafluoroethylene (PTFE), polyimide (PI), or fluorinated ethylene propylene (FEP), and the outer layer is covered with a shielding layer for shielding against ion beam interference, so as to reduce the impact of electromagnetic interference on signal transmission and ensure signal stability and accuracy. The shielding layer can be made of a metal material with high electrical and thermal conductivity (such as copper, aluminum, or stainless steel) to effectively shield electromagnetic interference and dissipate heat quickly. Preferably, the shielding layer can be formed by braiding metal wires to achieve good flexibility, provide mechanical protection for the internal power and signal lines, and effectively reduce electromagnetic interference.

[0028] like Figure 2 As shown, the lead tube 3 is a tubular structure that runs through both the inside and outside of the vacuum chamber 1, used to lead the cable 203 of the temperature probe 2 to the outside of the vacuum chamber 1. The lead tube 3 can be made of a metallic material (such as stainless steel or aluminum alloy) to achieve good mechanical strength and sealing performance. Preferably, the inner diameter of the lead tube 3 matches the diameter of the cable 203, so that the cable 203 can fill the internal channel of the lead tube 3, helping to prevent external gas from entering the vacuum chamber 1 through the lead tube 3 and ensuring the airtightness of the vacuum chamber 1. Furthermore, a special sealing element, such as an O-ring (which can be made of a soft sealing material such as rubber or fluororubber) or a metal gasket, can be installed inside the lead tube 3 to more effectively prevent external gas from entering the vacuum chamber 1.

[0029] In use, the temperature probe 2 is directly aligned with the wafer surface, enabling real-time and direct measurement of the wafer's temperature. Compared to traditional indirect methods (such as cooling water return temperature), this method effectively improves the accuracy and real-time performance of temperature measurement, ensuring that operators can promptly obtain the wafer's true temperature status and take swift action to prevent damage to the wafer in case of abnormal temperature increases. Because the temperature probe 2 uses a metal shielding shell, it effectively shields against interference from the ion beam in the vacuum chamber, ensuring the accuracy and reliability of temperature measurement. Furthermore, the temperature probe 2 is a non-contact temperature sensor fixed to the inner wall of the vacuum chamber, with its cable 203 led out to the outside of the vacuum chamber via the lead tube 3. This effectively solves the problem that contact temperature sensors cannot be used on high-speed rotating and reciprocating scanning target disks, thus achieving stable power and signal transmission. In summary, the ion implanter of this application can adapt to the complex environment within a vacuum chamber, achieving real-time and reliable measurement of wafer temperature and effectively ensuring the smooth operation of the ion implantation process.

[0030] In one embodiment, such as Figures 1-4 As shown, the ion implanter also includes a probe holder 4 fixedly mounted on the inner wall of the vacuum chamber 1, and the temperature sensor 201 is detachably connected to the probe holder 4. Specifically, as... Figure 3 and Figure 4 As shown, the probe bracket 4 can be assembled from a first bracket 401 and a second bracket 402 using fixing bolts and nuts. This includes fixing it to the inner wall of the vacuum chamber 1 with fastening screws or bolts to ensure its stability in a high vacuum environment. Furthermore, the temperature sensor 201 and the probe bracket 4, as well as the probe bracket 4 and the inner wall of the vacuum chamber 1, can be detachably connected using fixing bolts and nuts. This detachable design allows operators to quickly replace the temperature sensor 201 or the probe bracket 4 when needed, thereby reducing the overall maintenance cost of the equipment and extending its service life. The probe bracket 4 can be made of high-strength, corrosion-resistant metal materials, such as stainless steel or aluminum alloy, to meet the environmental requirements within the vacuum chamber 1.

[0031] In one embodiment, the ion implanter further includes a wire clamp (not shown in the figure), which securely attaches the cable 203 of the temperature probe 2 to the inner wall of the vacuum chamber 1, thereby preventing the cable 203 from moving or vibrating during operation, minimizing mutual interference between the cable 203 and the target disk 101, ensuring the stability of the ion implantation process, and protecting the cable 203. The wire clamp can be made of high-strength, corrosion-resistant metal materials, such as stainless steel or aluminum alloy, to meet the environmental requirements within the vacuum chamber 1.

[0032] In one embodiment, the ion implanter may include multiple temperature probes 2, each temperature probe 2 being disposed on the same inner wall of the vacuum chamber 1. The specific distribution of the multiple temperature probes 2 can be determined as needed; for example, they can be evenly distributed along the reciprocating scanning direction of the target disk 101, and this is not limited here. The cable 203 of each temperature probe 2 can be led out to the outside of the vacuum chamber 1 through the same lead tube 3, or it can be led out to the outside of the vacuum chamber 1 through multiple lead tubes 3 respectively, and this is not limited here.

[0033] Because wafers may be affected by uneven ion beams during ion implantation, leading to uneven surface temperature distribution, multi-point measurements can more comprehensively reflect the actual temperature state of the wafer. Therefore, setting up multiple temperature probes 2 enables real-time monitoring of the temperature at different locations on the wafer surface, providing richer temperature data. This helps operators or control systems adjust ion implantation process parameters in real time, ensuring process stability and uniformity. Simultaneously, multiple temperature probes 2 provide more data points; through data fusion and averaging, measurement errors can be reduced, improving the accuracy and reliability of temperature measurements. Furthermore, setting up multiple temperature probes 2 serves as backup. If one temperature probe 2 is damaged or malfunctions, the others can continue to operate, ensuring uninterrupted temperature monitoring. This redundancy design significantly improves the reliability and stability of the ion implanter.

[0034] In one embodiment, such as Figure 1 As shown, the ion implanter may also include a controller 5, an alarm 6, and a power supply 7 located outside the vacuum chamber 1. The controller 5 is connected to the temperature probe 2 via a cable 203; the alarm 6 is connected to the controller 5, and sounds an alarm when the temperature probe 2 detects that the wafer temperature exceeds a preset value; the power supply 7 is connected to the temperature probe 2 via a cable 203, and preferably uses a 12V DC power supply.

[0035] The above description is merely a preferred embodiment of this application and is not intended to limit this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. An ion implanter, characterized in that, include: A vacuum chamber (1) is provided inside which a target disk (101) for supporting the wafer is provided; The temperature probe (2) includes a temperature sensor (201), a metal shielding shell (202), and a cable (203); the temperature sensor (201) is a non-contact temperature sensor, which is disposed on the inner wall of the vacuum chamber (1) and aligned with the wafer surface carried on the target disk (101); the metal shielding shell (202) covers the outside of the temperature sensor (201) to shield the temperature sensor (201) from interference by the ion beam; the cable (203) is used to transmit power and signals to the temperature sensor (201); The lead tube (3) runs through the inside and outside of the vacuum chamber (1); the lead tube (3) is a tubular structure used to lead the cable (203) of the temperature probe (2) to the outside of the vacuum chamber (1).

2. The ion implanter according to claim 1, characterized in that, It also includes a probe bracket (4) fixedly mounted on the inner wall of the vacuum chamber (1), and the temperature sensor (201) is detachably connected to the probe bracket (4).

3. The ion implanter according to claim 1, characterized in that, It also includes a wire clamp that securely attaches the cable (203) of the temperature probe (2) to the inner wall of the vacuum chamber (1).

4. The ion implanter according to claim 1, characterized in that, Multiple temperature probes (2) are provided in the vacuum chamber (1), and each temperature probe (2) is located on the same inner wall of the vacuum chamber (1).

5. The ion implanter according to claim 1, characterized in that, It also includes a controller (5) located outside the vacuum chamber (1), and the controller (5) and the temperature probe (2) are connected by the cable (203).

6. The ion implanter according to claim 5, characterized in that, It also includes an alarm (6), which is connected to the controller (5) by signal. When the temperature probe (2) detects that the wafer temperature exceeds the preset value, the alarm (6) issues an alarm.

7. The ion implanter according to claim 1, characterized in that, It also includes a power supply (7) located outside the vacuum chamber (1), and the power supply (7) is electrically connected to the temperature probe (2) via a cable (203).

8. The ion implanter according to claim 1, characterized in that, The cable (203) of the temperature probe (2) is covered with a shielding layer to shield against interference from the ion beam.

9. The ion implanter according to claim 1, characterized in that, The lead tube (3) is provided with a seal to prevent external gas from entering the vacuum chamber (1).

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