Anti-deposition devices for ion implantation equipment, and ion implantation equipment

Abstract

An anti-deposition device for an ion implantation equipment, and the ion implantation equipment itself, are disclosed. The anti-deposition device includes a heating element surrounding the ion beam inlet of a process chamber. Due to the high temperature of the heating element after heating, the deposition rate of particles ejected from the wafer by the ion beam on the heating element is very slow. Furthermore, because the heating element shields the inner wall around the inlet of the process chamber, fewer particles are deposited on the inner wall around the inlet of the process chamber. Alternatively, once particles are deposited on the heating element, the adhesion between the particles and the heating element is stronger, making them less prone to detachment. This extends the cycle of preventive maintenance of the process chamber, thereby improving the production efficiency of the ion implantation equipment and reducing maintenance costs.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor manufacturing, and more particularly to an anti-deposition device for an ion implantation apparatus, and an ion implantation apparatus. Background Technology

[0002] Ion implantation is a material surface modification technology that has flourished and been widely applied internationally over the past 30 years. The basic principle of ion implantation is to inject an ion beam of a certain energy into the workpiece to be treated. The ion beam interacts physically and chemically with the atoms or molecules in the workpiece material, causing the ions in the workpiece to gradually lose energy and eventually remain in the workpiece. This process causes changes in the surface composition, structure, and properties of the workpiece material, thereby optimizing the surface properties of the workpiece or obtaining certain new and superior properties.

[0003] However, current ion implantation equipment and related devices still need improvement. Utility Model Content

[0004] The present invention addresses the problem of providing an anti-deposition device for ion implantation equipment and an ion implantation equipment itself, thereby improving the production efficiency and maintenance cost of ion implantation equipment.

[0005] To address the aforementioned problems, this utility model provides an anti-deposition device for an ion implantation apparatus. The ion implantation apparatus includes a process chamber and an inlet through the sidewall of the process chamber for ion beam inflow. The anti-deposition device is disposed on the inner wall of the process chamber around the inlet. The anti-deposition device includes a heating assembly having a through first groove, which is disposed opposite to the inlet to allow the ion beam to pass through.

[0006] Optionally, the heating assembly includes at least a heating element having a through first sub-slot, and the first sub-slot includes the first sub-slot.

[0007] Optionally, the heating element includes a heating element arranged in a circumferential manner around the first sub-channel.

[0008] Optionally, the heating element includes a heating element and a thermally conductive and anti-deposition layer covering the outside of the heating element, wherein the thermally conductive and anti-deposition layer is made of a non-metallic material.

[0009] Optionally, the heating assembly further includes: a baffle located on the side of the heating element facing away from the inlet, the baffle having a through second sub-slot, the second sub-slot being disposed opposite to the first sub-slot; the first slot includes the first sub-slot and the second sub-slot.

[0010] Optionally, a first gap exists between the heating element and the baffle.

[0011] Optionally, the width of the baffle is 80 mm to 400 mm; the length of the baffle is 150 mm to 800 mm.

[0012] Optionally, the baffle is made of a non-metallic material.

[0013] Optionally, the heating assembly further includes: a heat radiation reflector located on the side of the heating element facing the injection port, the heat radiation reflector having a second gap with the heating element, the heat radiation reflector having a through third sub-slot, the third sub-slot being disposed opposite to the first sub-slot; the first slot includes the first sub-slot and the third sub-slot.

[0014] Optionally, the number of the thermal radiation reflectors is multiple, and the multiple thermal radiation reflectors are arranged sequentially at intervals along the arrangement direction of the thermal radiation reflectors and the heating elements.

[0015] Optionally, the surface of the heat radiation reflector facing the heating element has a heat radiation reflective layer, which includes a metal foil layer.

[0016] Optionally, the anti-deposition device further includes: a support member located on the side of the heating assembly facing the injection port and used for fixed connection with the inner wall of the process chamber; the support member has a through second groove for the ion beam to pass through, and the second groove is also disposed opposite to the injection port; the heating assembly is fixedly disposed on the surface of the support member facing away from the injection port.

[0017] Optionally, the end face of the support member is provided with a mounting hole for installing a first fastener, and the support member is used to be fixedly connected to the inner wall of the process cavity through the first fastener.

[0018] Optionally, the support member further has an operating opening located on the side of the second through slot, the operating opening being connected to the end of the mounting hole away from the end face, and serving to provide operating space for installing the first fastener.

[0019] Optionally, the mounting hole is provided in the top end face of the support member, and the support member is used to be fixedly connected to the top wall of the process cavity by the first fastener; or, the mounting hole is provided in the side end face of the support member, and the support member is used to be fixedly connected to the side wall of the process cavity by the first fastener.

[0020] Optionally, a third gap exists between the heating component and the support member.

[0021] Optionally, the heating component is fixedly mounted on the surface of the support member facing away from the injection port by a second fastener.

[0022] Optionally, the first channel and the second channel constitute the channel of the anti-deposition device, the sidewall of the channel serves as the inner sidewall of the anti-deposition device, and the anti-deposition device further includes an outer sidewall disposed opposite to each of the inner sidewalls; the anti-deposition device further includes: a protective member, the protective member covering the inner sidewall, and the protective member also covering at least a portion of the surface of the support member facing the inlet and close to the channel, or the protective member covering the inner sidewall and the outer sidewall, and the protective member also covering the entire surface of the support member facing the inlet; the protective member is fixedly connected to the surface of the support member facing the inlet.

[0023] Optionally, the heating assembly further includes: a baffle located on the side of the heating element facing away from the inlet, the baffle having a through second sub-slot, the second sub-slot being disposed opposite to the first sub-slot, the first slot including the first sub-slot and the second sub-slot; the end of the protective member in the inner sidewall being disposed opposite to the surface of the baffle facing the heating element, and exposing the sidewall of the baffle.

[0024] Optionally, the protective component is made of a non-metallic material.

[0025] Optionally, the non-metallic material includes graphite, silicon, silicon nitride, silicon carbide, or gallium nitride.

[0026] Accordingly, this utility model embodiment also provides an ion implantation device, including: the anti-deposition device described in this utility model embodiment.

[0027] Compared with the prior art, the technical solution of this utility model embodiment has the following advantages:

[0028] The anti-deposition device provided in this embodiment is installed on the inner wall of the process chamber of an ion implantation device, and is located around the inlet for ion beam injection. The anti-deposition device includes a heating component with a through-hole first slot, which is positioned opposite to the inlet to allow the ion beam to pass through. During ion implantation, the heating component reaches a high temperature after heating, resulting in a slow deposition rate of particles ejected from the wafer by the ion beam onto the heating component. Furthermore, because the heating component shields the inner wall around the inlet of the process chamber, fewer particles are deposited on the inner wall around the inlet, or the particles deposited on the heating component have stronger adhesion and are less prone to detachment. This extends the preventative maintenance cycle of the process chamber, thereby improving the production efficiency of the ion implantation device and reducing maintenance costs. Even after a long period, if particles are deposited on the heating component, cleaning the anti-deposition device is more convenient than cleaning the process chamber, and the cleanliness of the anti-deposition device after cleaning is also higher, reducing the probability of ion implantation equipment failure. This is beneficial for improving the production efficiency of the ion implantation equipment and the reliability of the ion implantation process. Attached Figure Description

[0029] Figure 1 It refers to the direction of the ion beam and the direction of particle movement during the ion implantation process.

[0030] Figure 2 This is a left-side structural schematic diagram of an embodiment of the anti-deposition device of this utility model;

[0031] Figure 3 This is a three-dimensional structural schematic diagram of an embodiment of the anti-deposition device of this utility model;

[0032] Figure 4 This is a three-dimensional structural diagram of a partial area of ​​an embodiment of the anti-deposition device of this utility model;

[0033] Figure 5 This is a schematic diagram showing the fixed connection between the support component of the anti-deposition device of this utility model and the top of the process chamber. Detailed Implementation

[0034] refer to Figure 1 , Figure 1This refers to the direction of the ion beam and the movement direction of the particles during the ion implantation process. During ion implantation, the impact of the ion beam 11 on the workpiece 12 may cause particles 13 to be sputtered out of the workpiece 12. The sputtered particles 13 will move upstream of the ion beam 11, resulting in most of the particles 13 being deposited on the inner wall 14 of the process cavity opposite to the workpiece 12. Over time, the deposited material on the inner wall 14 will continuously thicken, and the risk of workpiece contamination and abnormal discharge caused by the shedding of the deposited material will also increase.

[0035] To address the aforementioned technical problems, this utility model provides an anti-deposition device for an ion implantation apparatus. The ion implantation apparatus includes a process chamber and an inlet through the sidewall of the process chamber for ion beam inflow. The anti-deposition device is disposed on the inner wall of the process chamber around the inlet. The anti-deposition device includes a heating assembly having a through first groove, which is disposed opposite to the inlet to allow the ion beam to pass through.

[0036] In the embodiment of this utility model, the anti-deposition device is installed on the inner wall of the process chamber of the ion implantation equipment and is located around the entrance port for the ion beam. The anti-deposition device includes a heating component with a through-hole first slot, which is arranged opposite to the entrance port to allow the ion beam to pass through. During the ion implantation process, because the heating component has a high temperature after heating, the deposition rate of particles ejected from the wafer by the ion beam on the heating component is very slow. Furthermore, because the heating component shields the inner wall around the entrance port of the process chamber, fewer particles are deposited on the inner wall around the entrance port of the process chamber. Alternatively, after the particles are deposited on the heating component, the adhesion between the particles and the heating component is stronger and they are less likely to fall off, thereby extending the cycle of preventive maintenance of the process chamber, improving the production efficiency of the ion implantation equipment, and reducing maintenance costs. Even after a long period of time, particles may accumulate on the heating components. Compared to cleaning the process chamber, cleaning the anti-deposition device is more convenient, and the cleanliness of the anti-deposition device after cleaning is also higher, reducing the probability of ion implantation equipment failure. This is beneficial to improving the production efficiency of ion implantation equipment and the reliability of the ion implantation process.

[0037] To make the above-mentioned objectives, features and advantages of the present invention more apparent and understandable, the specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0038] Figure 2 This is a left-side structural schematic diagram of an embodiment of the anti-deposition device of this utility model. Figure 3 This is a three-dimensional structural schematic diagram of an embodiment of the anti-deposition device of this utility model. Figure 4 This is a three-dimensional structural diagram of a partial area of ​​an embodiment of the anti-deposition device of this utility model. Figure 5 This is a schematic diagram showing the fixed connection between the support component of the anti-deposition device of this utility model and the top of the process chamber.

[0039] refer to Figures 2 to 5 In this embodiment, the anti-deposition device 10 of the ion implantation equipment includes a process chamber 101 and an inlet 104 for an ion beam 103 penetrating through the sidewall 102 of the process chamber 101. The anti-deposition device 10 is disposed on the inner wall 102' of the process chamber 101 around the inlet 104. The anti-deposition device 10 includes a heating assembly 100, which has a through first channel 111. The first channel 111 is disposed opposite to the inlet 104 to allow the ion beam 103 to pass through.

[0040] It should be noted that, in order to clearly show the structure of the anti-deposition device, Figure 2 and Figure 3 The protective element has been omitted.

[0041] Since the first through-slot 111 of the heating assembly 100 is used for the passage of the ion beam 103, during the ion implantation process, because the heating assembly 100 has a high temperature after heating, the deposition rate of particles ejected from the workpiece (e.g., wafer) by the ion beam on the heating assembly 100 is very slow. Furthermore, because the heating assembly 100 shields the inner wall around the inlet 104 of the process chamber 101, fewer particles (e.g., phosphorus, with a low sublimation temperature) are deposited on the inner wall 102′ around the inlet 104 of the process chamber 101. Alternatively, once particles are deposited on the heating assembly 100, the adhesion between the particles and the heating assembly 100 is stronger, making them less prone to detachment. This extends the cycle of preventative maintenance of the process chamber, thereby improving the production efficiency of the ion implantation equipment and reducing maintenance costs. Even after a long period of time, particles may be deposited on the heating component 100. Compared with the cleaning process chamber, cleaning the anti-deposition device 10 is more convenient, and the cleanliness of the anti-deposition device 10 after cleaning is also higher, which reduces the probability of ion implantation equipment failure. This is conducive to improving the production efficiency of ion implantation equipment and improving the reliability of ion implantation process.

[0042] In this embodiment, the heating assembly 100 includes at least a heating element 110, the heating element 110 having a through first sub-channel 113, and the first channel 111 including the first sub-channel 113.

[0043] The heating element 110 is used to heat the side of the heating assembly 100 facing away from the injection port 104.

[0044] Specifically, the heating element 110 includes a heating element (not shown).

[0045] The heating element is used to generate heat so that the heating element 110 can heat the side of the heating assembly 100 facing away from the inlet 104.

[0046] As an example, the heating element includes a heating wire. In other embodiments, the heating element may also be other suitable resistance heating elements.

[0047] It should be noted that the heating element is arranged in a roundabout manner around the first sub-channel 113, which extends the length of the heating element, thereby improving the heating efficiency of the heating element, and also helps to improve the heating uniformity of the side of the heating assembly 100 facing away from the inlet 104.

[0048] The heating element is arranged in a serpentine manner around the first sub-channel 113, including: the heating element is arranged in a serpentine manner around the first sub-channel 113 (e.g., ...). Figure 3 (as shown), or the heating element is arranged spirally around the first sub-channel 113.

[0049] Since the heating element is arranged in a roundabout manner around the first sub-channel 113, the heating element is also arranged in a roundabout manner around the first sub-channel 113.

[0050] It is understood that the heating element has a conductive terminal 114 that is connected to an external power source.

[0051] It should also be noted that the heating element 110 further includes a thermally conductive and anti-deposition layer 116 covering the outside of the heating element. The thermally conductive and anti-deposition layer 116 helps to reduce the probability of damage to the heating element, thereby improving the service life of the heating element.

[0052] In other embodiments, the heating element may further include a heating medium and a conduit for the flow of the heating medium. The heating medium may be a gas or a liquid.

[0053] In this embodiment, the thermally conductive anti-deposition layer 116 is made of a non-metallic material, which helps to reduce the probability of metal contamination caused by ion beam impact on the thermally conductive anti-deposition layer 116.

[0054] Specifically, the non-metallic material includes graphite. Graphite has good thermal conductivity, and using graphite as the material of the thermally conductive anti-deposition layer 116 is beneficial to improving the heating effect of the heating element on the side of the heating assembly 100 facing away from the injection port 104. In other embodiments, the non-metallic material may also include silicon, silicon nitride, silicon carbide, or gallium nitride.

[0055] In this embodiment, as Figure 2 and Figure 3 As shown, the heating assembly 100 further includes a baffle 120 located on the side of the heating element 110 facing away from the inlet 104. The baffle 120 has a through second sub-channel 121, which is disposed opposite to the first sub-channel 113. The first channel 111 includes the first sub-channel 113 and the second sub-channel 121.

[0056] The baffle 120 is heated to a high temperature by the heating element 110. Particles ejected from the workpiece (e.g., a wafer) by the ion beam deposit slowly on the baffle 120. Because the baffle 120 shields the inner wall around the inlet 104 of the process chamber 101, fewer particles are deposited on the inner wall 102' around the inlet 104. Furthermore, once particles are deposited on the baffle 120, the adhesion between the particles and the baffle 120 is stronger, making them less prone to detachment. This extends the preventative maintenance cycle of the process chamber, thereby improving the production efficiency of the ion implantation equipment and reducing maintenance costs. Even after a long period, if particles are deposited on the baffle 120, the removable cleaning baffle 120 is easier to remove than cleaning the process chamber, and the cleaned baffle 120 has a higher cleanliness level, reducing the probability of ion implantation equipment failure. This, in turn, helps improve the production efficiency of the ion implantation equipment and the reliability of the ion implantation process.

[0057] In other embodiments, the heating assembly may also exclude the baffle.

[0058] Specifically, a first gap 122 (e.g., between the heating element 110 and the baffle 120) is provided. Figure 2 As shown, this helps to reduce the probability of the baffle 120 breaking due to collision with the heating element 110 during the installation of the anti-deposition device.

[0059] It should be noted that the baffle 120 includes a baffle body 123 and a second sub-channel 121 formed by the baffle body 123.

[0060] It should also be noted that the width W and length L of the baffle 120 should not be too small or too large. If the width W or length L of the baffle 120 is too small, the sputtered particles will have a wide range of movement, and some particles will deposit on the inner wall of the process cavity around the baffle 120. If the width W or length L of the baffle 120 is too large, it will easily cause unnecessary material waste. Therefore, in this embodiment, the width W of the baffle 120 is 80 mm to 400 mm, and the length L of the baffle 120 is 150 mm to 800 mm. For example, it can be a width W of 100 mm and a length L of 400 mm, or a width of 300 mm and a length of 700 mm, etc.

[0061] In this embodiment, the baffle 120 is made of non-metallic material, which helps to reduce the probability of metal contamination caused by the impact of the ion beam on the baffle 120.

[0062] Specifically, the non-metallic material includes graphite, silicon, silicon nitride, silicon carbide, or gallium nitride.

[0063] Graphite, silicon, silicon nitride, silicon carbide, and gallium nitride all have good heat resistance. Choosing graphite, silicon, silicon nitride, silicon carbide, or gallium nitride as the material for the baffle is beneficial to improving the service life of the baffle.

[0064] In this embodiment, as Figure 2 and Figure 3 As shown, the heating assembly 100 further includes: a heat radiation reflector 130 located on the side of the heating assembly 110 facing the inlet 104, the heat radiation reflector 130 having a second gap 131 between it and the heating assembly 110, the heat radiation reflector 130 having a through third sub-channel 132, the third sub-channel 132 being disposed opposite to the first sub-channel 113; the first channel 111 including the first sub-channel 113 and the third sub-channel 132.

[0065] The heat radiation reflector 130 can reflect the heat radiated by the heating element 110 toward the inlet 104, thereby blocking the heat radiation from the heating element 110 toward the inlet 104 and reducing the heat loss caused by the heat radiation from the heating element 110 toward the inlet 104. Correspondingly, it also improves the heating effect of the heating element 110 on the side of the heating assembly 100 facing away from the inlet 104, which in turn helps to further slow down the deposition rate of pollutant particles on the side of the heating assembly 100 facing away from the inlet 104.

[0066] In other embodiments, the heating assembly may also exclude a heat radiation reflector.

[0067] It should be noted that there are multiple thermal radiation reflectors 130, and along the arrangement direction of the thermal radiation reflectors 130 and the heating element 110, the multiple thermal radiation reflectors 130 are arranged sequentially at intervals, which helps to further reduce heat loss caused by thermal radiation from the heating element 110 to the entrance port 104. As an example, there are two thermal radiation reflectors 130. In other embodiments, the number of thermal radiation reflectors can also be three, four, five, etc. The number of thermal radiation reflectors can be set according to actual needs and is not limited to this.

[0068] It should also be noted that the surface of the heat radiation reflector 130 facing the heating element 110 has a heat radiation reflector layer 133, which includes a metal foil layer.

[0069] Metal foil layers typically possess good heat reflectivity and high-temperature resistance, which helps the heat radiation reflector 130 to effectively block heat radiation from the heating element 110 towards the entrance port 104, and also helps to extend the service life of the heat radiation reflector 130. In other embodiments, the heat radiation reflector layer may also include other non-metallic layers with high heat radiation reflectivity, such as titanium dioxide layers, zinc oxide layers, or boron nitride layers, etc., containing ceramic materials.

[0070] As an example, the metal foil layer may include an aluminum foil layer or a silver foil layer.

[0071] It is understood that when there are multiple thermal radiation reflectors 130, each of the thermal radiation reflectors 130 has a thermal radiation reflective layer 133 on the surface facing the heating element 110.

[0072] In one specific embodiment, the heating assembly 100 includes: a heating element 110 having a through first sub-channel 113; a baffle 120 located on the side of the heating element 110 facing away from the inlet 104, the baffle 120 having a through second sub-channel 121, the second sub-channel 121 being disposed opposite to the first sub-channel 113; and a heat radiation reflector 130 located on the side of the heating element 110 facing the inlet 104, with a second gap 131 between adjacent heat radiation reflectors 130 and the heating element 110, the heat radiation reflector 130 having a through third sub-channel 132, the third sub-channel 132 being disposed opposite to the first sub-channel 113; the first channel 111 includes the first sub-channel 113, the second sub-channel 121, and the third sub-channel 132.

[0073] In this embodiment, as Figure 2 and Figure 3As shown, the anti-deposition device 10 further includes: a support member 200 located on the side of the heating assembly 100 facing the inlet 104, and used for fixed connection with the inner wall 102' of the process chamber 101; the support member 200 has a through second channel 201 for the ion beam 103 to pass through, and the second channel 201 is also disposed opposite to the inlet 104; the heating assembly 100 is fixedly disposed on the surface of the support member 200 facing away from the inlet 104.

[0074] The support member 200 is used to fix the heating assembly 100 to the inner wall 102' of the process cavity 101 around the inlet 104.

[0075] Furthermore, when the heating assembly 100 includes the baffle 120 and / or the heat radiation reflector 130, the heating assembly 100 is disposed on the inner wall 102' of the process cavity 101 surrounding the inlet 104 by the support member 200, which facilitates the installation and disassembly of the heating assembly 100.

[0076] Specifically, such as Figure 3 and Figure 5 As shown, the end face 202 of the support member 200 is provided with a mounting hole 203. The mounting hole 203 is used to install the first fastener 204, and the support member 200 is used to fix the support member 200 to the inner wall 102' of the process cavity 101 through the first fastener 204. This helps to reduce the difficulty of fixing the support member 200 to the inner wall 102' of the process cavity 101.

[0077] The side of the support member 200 facing the inlet 104 is the back side, the side opposite to the back side is the front side, and all other sides of the support member 200 except the front and back sides are end faces.

[0078] As an example, the first fastener 204 includes a bolt. Correspondingly, the mounting hole 203 is a threaded hole. The support 200 is fixedly connected to the inner wall 102' of the process cavity 101 by threading the bolt to the inner wall 102' of the process cavity 101. In other embodiments, the first fastener may also include other removable fasteners such as screws.

[0079] More specifically, the support member 200 also has an operation opening 205 located on the side of the second through groove 201, the operation opening 205 being connected to the end of the mounting hole 203 away from the end face 202, and being used to provide operating space for installing the first fastener 204.

[0080] An operation opening 205 is provided on the side of the second through groove 201, which facilitates the first fastener 204 to be sequentially inserted into the mounting hole 203 and the inner wall 102' of the process cavity 101 through the operation opening 205, thereby reducing the difficulty of fixing the support member 200 to the inner wall 102' of the process cavity 101.

[0081] It is understood that the operating opening 205 can penetrate the entire thickness of the support member 200, or it can only penetrate a portion of the thickness of the support member 200. The operating opening 205 only needs to provide operating space for installing the first fastener 204.

[0082] As an example, the operating opening 205 extends through the entire thickness of the support member 200.

[0083] In other embodiments, the operating opening may not be provided. Accordingly, the first fastener is inserted from the outside of the process cavity, passes through the side wall of the process cavity, and then is inserted into the mounting hole.

[0084] In one embodiment, the mounting hole 203 is provided in the end face 202 at the top of the support member 200, and the support member 200 is used to be fixedly connected to the top wall 106 of the process cavity 101 by the first fastener 204 (e.g., Figure 5 (As shown). In other embodiments, the mounting hole is provided in the end face of the side portion of the support member, and the support member is used to be fixedly connected to the side wall of the process cavity by the first fastener.

[0085] In this embodiment, a third gap 207 is provided between the heating component 100 and the support member 200, which helps to prevent heat conduction between the heating component 100 and the support member 200.

[0086] In this embodiment, the heating component 100 is fixedly mounted on the surface of the support member 200 facing away from the inlet 104 by the second fastener 206, which helps to reduce the difficulty of fixing the heating component 100 on the surface of the support member 200 facing away from the inlet 104.

[0087] As an example, the second fastener 206 includes a bolt. In other embodiments, the second fastener may also include other removable fasteners such as screws.

[0088] As another example, when the heating assembly 100 is fixedly mounted on the side of the support member 200 facing away from the inlet 104 by the second fastener 206, washers are fitted onto the bolts, and gaps are maintained between the various components of the heating assembly 100 (e.g., between the baffle 120 and the heating element 110, and between the heating element 110 and the heat radiation reflector 130) and between the heating assembly 100 and the support member 200 by washers (not shown).

[0089] In this embodiment, the first through groove 111 and the second through groove 201 constitute the through groove 300 of the anti-deposition device 10, and the sidewall of the through groove 300 serves as the inner sidewall 301 of the anti-deposition device 10; as Figure 4 As shown, the anti-deposition device 10 further includes: a protective member 400, which covers the inner sidewall 301, and the protective member 400 also covers at least a portion of the surface of the support member 200 facing the inlet 104 and close to the through groove 300; the protective member 400 is fixedly connected to the surface of the support member 200 facing the inlet 104.

[0090] The protective element 400 is used to block the ion beam 103 from entering the anti-deposition device 10, thereby reducing the probability that the ion beam 103 will damage the interior of the anti-deposition device 10 and cause other problems, such as reducing the probability that the ion beam 103 will collide with the metal material inside the anti-deposition device 10 and cause metal contamination.

[0091] In other embodiments, the anti-deposition device further includes an outer wall disposed opposite to each of the inner sidewalls; the protective member covers the inner sidewall and the outer sidewall, and the protective member also covers the entire surface of the support member facing the inlet, which is beneficial to making the protective member more effective in blocking the ion beam from entering the anti-deposition device.

[0092] Specifically, the protective component 400 is made of non-metallic material, which helps to reduce the probability of metal contamination caused by the impact of the ion beam on the protective component 400.

[0093] More specifically, the non-metallic material includes graphite, silicon, silicon nitride, silicon carbide, or gallium nitride.

[0094] Graphite, silicon, silicon nitride, silicon carbide, and gallium nitride all have good heat resistance. Choosing graphite, silicon, silicon nitride, silicon carbide, or gallium nitride as the material for the baffle is beneficial to improving the service life of the baffle.

[0095] In one embodiment, the heating assembly 100 further includes: a baffle 120 located on the side of the heating element 110 facing away from the inlet 104, the baffle 120 having a through second sub-channel 121, the second sub-channel 121 being disposed opposite to the first sub-channel 113, the first channel 111 including the first sub-channel 113 and the second sub-channel 121; the end of the protective member 400 in the inner sidewall 301 being disposed opposite to the surface of the baffle 120 facing the heating element 110, and exposing the sidewall of the baffle 120.

[0096] The end of the protective member 400 in the inner wall 301 is disposed opposite to the surface of the baffle 120 facing the heating member 110, so that when the protective member 400 is fixedly connected to the surface of the support member 200 facing the inlet 104, the baffle 120 can play a supporting role, thereby helping to reduce the difficulty of fixing the protective member 400.

[0097] In other embodiments, where the protective member covers the inner and outer sidewalls, and the protective member also covers the entire surface of the support member facing the inlet, the ends of the protective members in the inner and outer sidewalls are respectively disposed opposite to the surface of the baffle facing the heating element, and the two sidewalls of the baffle are exposed.

[0098] Accordingly, this utility model also provides an ion implantation device.

[0099] Reference Figures 2 to 5 In this embodiment, the ion implantation device includes: the anti-deposition device 10 described in any embodiment of this utility model.

[0100] The heating component 100 has a side facing away from the injection port 104 for receiving contaminant particles from the ion implantation process.

[0101] Since the first through-slot 111 of the heating assembly 100 is used for the passage of the ion beam 103, during the ion implantation process, because the heating assembly 100 has a high temperature after heating, the deposition rate of particles ejected from the workpiece (e.g., wafer) by the ion beam on the heating assembly 100 is very slow. Furthermore, because the heating assembly 100 shields the inner wall around the inlet 104 of the process chamber 101, fewer particles are deposited on the inner wall 102' around the inlet 104 of the process chamber 101. Alternatively, once particles are deposited on the heating assembly 100, the adhesion between the particles and the heating assembly 100 is stronger, making them less prone to detachment. This extends the cycle of preventative maintenance of the process chamber, thereby improving the production efficiency of the ion implantation equipment and reducing maintenance costs. Even after a long period of time, particles may be deposited on the heating component 100. Compared with the cleaning process chamber, cleaning the anti-deposition device 10 is more convenient, and the cleanliness of the anti-deposition device 10 after cleaning is also higher, which reduces the probability of ion implantation equipment failure. This is conducive to improving the production efficiency of ion implantation equipment and improving the reliability of ion implantation process.

[0102] As an example, such as Figure 5 As shown, the ion implantation device further includes: a fixing member 107 disposed on the top of the process chamber 101; the mounting hole 203 is provided in the end face 202 of the top of the support member 200 of the anti-deposition device 10, and when the support member 200 is fixedly connected to the top wall 106 of the process chamber 101 by the first fastener 204, the first fastener 204 is also fixedly connected to the fixing member 107.

[0103] Specifically, the first fastener 204 is a bolt, and the connection between the first fastener 204 and the fixing member 107 is a threaded connection.

[0104] It is understood that the mounting hole 203 is a threaded hole, and both the fastener 107 and the top wall 106 of the process cavity 101 have threaded holes corresponding to the mounting hole 203.

[0105] In other embodiments, the ion implantation apparatus may also exclude the fastener; the first fastener is only connected to the top wall of the process chamber.

[0106] While the present invention has been disclosed above, it is not limited thereto. Any person skilled in the art can make various modifications and alterations without departing from the spirit and scope of the present invention; therefore, the scope of protection of the present invention should be determined by the scope defined in the claims.

Claims

1. A deposition prevention device for an ion implantation apparatus, the ion implantation apparatus comprising a process chamber and an inlet penetrating the sidewall of the process chamber for ion beam inflow, characterized in that, The anti-deposition device is used to be installed on the inner wall of the process chamber around the inlet; The anti-deposition device includes a heating component having a through first slot, the first slot being configured opposite to the injection port to allow the ion beam to pass through.

2. The deposition preventing apparatus for an ion implantation apparatus according to claim 1, wherein The heating assembly includes at least a heating element, the heating element having a through first sub-slot, and the first sub-slot includes the first sub-slot.

3. The deposition preventing apparatus for an ion implantation apparatus according to claim 2, wherein The heating element includes a heating element arranged in a circumferential manner around the first sub-channel.

4. The deposition preventing apparatus for an ion implantation apparatus according to Claim 2, wherein The heating element includes a heating element and a thermally conductive and anti-deposition layer covering the outside of the heating element. The thermally conductive and anti-deposition layer is made of a non-metallic material.

5. The deposition preventing apparatus for an ion implantation apparatus according to Claim 2, wherein The heating assembly also includes: A baffle is located on the side of the heating element facing away from the injection port. The baffle has a through second sub-slot, which is disposed opposite to the first sub-slot. The first through slot includes a first sub-through slot and a second sub-through slot.

6. The deposition preventing apparatus for an ion implantation apparatus according to claim 5, wherein There is a first gap between the heating element and the baffle.

7. The deposition preventing apparatus of an ion implantation apparatus according to claim 5, wherein The width of the baffle is 80 mm to 400 mm; the length of the baffle is 150 mm to 800 mm.

8. The deposition preventing apparatus for an ion implantation apparatus according to claim 5, wherein The baffle is made of non-metallic material.

9. The anti-deposition device of the ion implantation equipment as described in claim 2, characterized in that, The heating assembly also includes: A heat radiation reflector is located on the side of the heating element facing the entrance port. A second gap exists between the heat radiation reflector and the heating element. The heat radiation reflector has a through third sub-slot, which is disposed opposite to the first sub-slot. The first through slot includes the first sub-through slot and the third sub-through slot.

10. The anti-deposition device for the ion implantation equipment as described in claim 9, characterized in that, The number of thermal radiation reflectors is multiple, and the multiple thermal radiation reflectors are arranged sequentially at intervals along the arrangement direction of the thermal radiation reflectors and the heating elements.

11. The anti-deposition device for the ion implantation equipment as described in claim 9 or 10, characterized in that, The surface of the heat radiation reflector facing the heating element has a heat radiation reflective layer, which includes a metal foil layer.

12. The anti-deposition device of the ion implantation apparatus as described in any one of claims 2 to 10, characterized in that, The anti-deposition device further includes: a support member located on the side of the heating assembly facing the injection port and used for fixed connection with the inner wall of the process chamber; the support member has a through second slot for the ion beam to pass through, and the second slot is also arranged opposite to the injection port. The heating component is fixedly mounted on the support member.

13. The anti-deposition device for the ion implantation equipment as described in claim 12, characterized in that, The end face of the support member is provided with a mounting hole for installing a first fastener, and the support member is used to be fixedly connected to the inner wall of the process cavity through the first fastener.

14. The anti-deposition device for the ion implantation equipment as described in claim 13, characterized in that, The support member also has an operating opening located on the side of the second through slot, the operating opening being connected to the end of the mounting hole away from the end face, and is used to provide operating space for installing the first fastener.

15. The anti-deposition device for the ion implantation equipment as described in claim 13, characterized in that, The mounting hole is provided in the top end face of the support member, and the support member is used to be fixedly connected to the top wall of the process cavity by the first fastener. Alternatively, the mounting hole is provided in the side end face of the support member, and the support member is used to be fixedly connected to the side wall of the process cavity by the first fastener.

16. The anti-deposition device for the ion implantation equipment as described in claim 12, characterized in that, There is a third gap between the heating component and the support member.

17. The anti-deposition device for the ion implantation equipment as described in claim 12, characterized in that, The heating component is fixedly mounted on the side of the support member facing away from the injection port by a second fastener.

18. The anti-deposition device for the ion implantation equipment as described in claim 12, characterized in that, The first channel and the second channel constitute the channel of the anti-deposition device, and the sidewall of the channel serves as the inner sidewall of the anti-deposition device. The anti-deposition device also includes an outer sidewall disposed opposite to each of the inner sidewalls. The anti-deposition device further includes: a protective member, the protective member covering the inner sidewall, and the protective member also covering at least a portion of the surface of the support member facing the inlet and close to the through groove; or, the protective member covering the inner sidewall and the outer sidewall, and the protective member also covering the entire surface of the support member facing the inlet. The protective member is fixedly connected to the surface of the support member facing the inlet.

19. The anti-deposition device for the ion implantation equipment as described in claim 18, characterized in that, The heating assembly further includes: a baffle located on the side of the heating element facing away from the inlet, the baffle having a through second sub-slot, the second sub-slot being disposed opposite to the first sub-slot, the first slot including the first sub-slot and the second sub-slot; The end of the protective member in the inner wall is positioned opposite to the surface of the baffle facing the heating element, and the side wall of the baffle is exposed.

20. The anti-deposition device for the ion implantation equipment as described in claim 18, characterized in that, The protective component is made of non-metallic material.

21. The anti-deposition device for the ion implantation equipment as described in claim 4, 8, or 20, characterized in that, The non-metallic materials include graphite, silicon, silicon nitride, silicon carbide, or gallium nitride.

22. An ion implantation device, characterized in that, include: The anti-deposition device as described in any one of claims 1 to 21.

Images