Target material for electrode
By optimizing the structure of the electrode target, especially the staggered distribution of protrusions and depressions, the uniformity of the RRAM electrode film was improved, the problem of Rs difference in different regions of the wafer was solved, and the performance consistency and reliability of RRAM were enhanced.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- INNOSTAR SEMICON (SHANGHAI) CO LTD
- Filing Date
- 2025-06-12
- Publication Date
- 2026-05-29
Smart Images
Figure CN224299338U_ABST
Abstract
Description
Technical Field
[0001] This application generally relates to the semiconductor field. More specifically, this application relates to an electrode target. Background Technology
[0002] Resistive random access memory (RRAM), as a novel type of memory device, has attracted widespread attention due to its compact structure and high storage speed. For example... Figure 1 The typical structure of RRAM shown includes an upper electrode (TE), a lower electrode (BE), and a resistive switching layer (SL) located between the upper electrode (TE) and the lower electrode (BE), capable of forming conductive filaments. During the deposition of the electrode film in RRAM, factors such as magnetic fields and gas flow distribution lead to significant differences in the sheet resistance (Rs) of the electrode films formed in different regions of the wafer (e.g., the central region and the edge region). This further results in RRAM memory cells fabricated in different regions of the same wafer having electrodes with significantly different Rs values. These electrodes with significantly different Rs values produce significantly different performance differences for their respective RRAMs. Specifically, this leads to different performance differences in RRAMs in different regions of the same wafer (e.g., different forming voltages, read voltages, write voltages, retention, endurance, etc.), which affects the memory performance.
[0003] In view of this, there is an urgent need to provide an electrode target material to improve the Rs uniformity of electrode films formed in different regions of a wafer and enhance the performance of RRAM. Utility Model Content
[0004] In order to at least solve one or more of the technical problems mentioned above, this application proposes a target material for an electrode in several aspects.
[0005] In a first aspect, this application provides an electrode target material, including a target material body and a first layer disposed on the upper surface of the target material body, wherein the first layer includes: a first layer body disposed on the upper surface of the target material body; a first portion formed on the side of the first layer body away from the target material body, the first portion having a first extending direction; and a second portion formed on the side of the first layer body away from the target material body, the second portion having a second extending direction; wherein the first extending direction and the second extending direction have an included angle α.
[0006] In some embodiments, the first portion includes a protrusion and the second portion includes a recess; or, the first portion includes a recess and the second portion includes a protrusion.
[0007] In some embodiments, the first part includes M protrusions and the second part includes N recesses; or, the first part includes M recesses and the second part includes N protrusions; and M and N satisfy the following conditions: M is greater than N, or M is equal to N, or M is less than N.
[0008] In some embodiments, the first portion and the second portion are staggered on the first layer body, wherein M-N = -1 or 0 or 1.
[0009] In some embodiments, the target material satisfies at least one of the following conditions: the center point of the bottom surface of the first layer body coincides with the center point of the upper surface of the target material body in the vertical direction; the center point of the bottom surface of the second portion coincides with the center point of the upper surface of the target material body and / or the center point of the bottom surface of the first layer body in the vertical direction; the center point of the bottom surface of the first portion coincides with the center point of the upper surface of the target material body and / or the center point of the top surface of the first layer body in the vertical direction.
[0010] In some embodiments, the longitudinal section of the protrusion and / or the recess includes one of a trapezoid, a rounded trapezoid, a rectangle, a rounded rectangle, or a semicircle.
[0011] In some embodiments, the angle α between the first extending direction and the second extending direction satisfies the relationship 0°≤α≤180°.
[0012] In some embodiments, the second portion includes a first sub-region and a second sub-region, wherein the center point of the bottom surface of the first sub-region coincides with the center point of the top surface of the first layer body in the vertical direction, and the second sub-region is formed at the end of the first layer in the horizontal direction.
[0013] In some embodiments, the second part includes a first sub-region and a third sub-region, wherein the center point of the bottom surface of the first sub-region coincides with the center point of the top surface of the first layer body and the center point of the top surface of the third sub-region in the vertical direction.
[0014] In some embodiments, the sheet resistance uniformity percentage of the electrode film formed by the target deposition is less than or equal to 27%.
[0015] In some embodiments, the target material includes one or more of Al, Hf, Ta, Ti, Nb, and Zn.
[0016] In some embodiments, in the longitudinal section of the target material, the maximum width of the upper surface of the first portion is between 15 mm and 100 mm, and the thickness of the first portion is between 0 mm and 10 mm.
[0017] By optimizing the target structure of the electrode as provided above, the embodiments of this application can improve the atomic density and distribution of the electrode film deposited on the wafer, improve the difference in metal atom content of the electrode film deposited in different regions of the wafer, and thus improve the uniformity of Rs distribution of the electrode film in different regions of the wafer, especially the uniformity of metal atom content of the electrode film in the central and edge regions of the wafer, thereby improving the performance of RRAM, such as the RRAM cells in different regions of the wafer having more consistent durability and retention. Attached Figure Description
[0018] The above and other objects, features, and advantages of exemplary embodiments of this application will become readily understood by reading the following detailed description with reference to the accompanying drawings. In the drawings, several embodiments of this application are illustrated by way of example and not limitation, and the same or corresponding reference numerals denote the same or corresponding parts, wherein:
[0019] Figure 1 The present application shows example structural diagrams of RRAMs according to some embodiments;
[0020] Figure 2 A specific example diagram of the target material for electrodes according to some embodiments of this application is shown;
[0021] Figure 3 A specific example diagram of a target material including a first sub-region and a second sub-region, according to some embodiments of this application, is shown.
[0022] Figure 4 A specific example diagram of a target material including a first sub-region and a third sub-region, according to some embodiments of this application, is shown;
[0023] Figure 5A Example diagrams showing the Rs distribution of the target material and the formed electrode film in some embodiments of this application are shown;
[0024] Figure 5B An example diagram showing the Rs distribution of the target material including protrusions and the formed electrode film in some embodiments of this application is illustrated.
[0025] Figure 5C This diagram illustrates an example of the Rs distribution of a target material including protrusions and recesses and a formed electrode film, according to some embodiments of this application.
[0026] Figure 5D Another example diagram showing the Rs distribution of the target material including protrusions and recesses and forming the electrode film, according to some embodiments of this application, is illustrated. Attached image description:
[0028] Target material 20; Target body 21; First layer 22;
[0029] First layer of main body 221; First part 222; Second part 223;
[0030] First sub-region 223-1; Second sub-region 223-2; Third sub-region 223-3. Detailed Implementation
[0031] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this application. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.
[0032] It should be understood that the terms "comprising" and "including" used in the specification and claims of this application indicate the presence of the described features, integrals, steps, operations, elements and / or components, but do not exclude the presence or addition of one or more other features, integrals, steps, operations, elements, components and / or collections thereof.
[0033] It should also be understood that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the application. As used in this specification and claims, the singular forms “a,” “an,” and “the” are intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the term “and / or” as used in this specification and claims refers to any combination and all possible combinations of one or more of the associated listed items, and includes such combinations.
[0034] As used in this specification and claims, the term "if" may be interpreted, depending on the context, as "when," "once," "in response to determination," or "in response to detection." Similarly, the phrase "if determined" or "if [described condition or event] is detected" may be interpreted, depending on the context, as "once determined," "in response to determination," "once [described condition or event] is detected," or "in response to detection of [described condition or event]."
[0035] The technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings.
[0036] Figure 2 A specific example diagram of the target material for electrodes according to some embodiments of this application is shown.
[0037] like Figure 2As shown, the electrode target 20 includes a target body 21 and a first layer 22 disposed on the upper surface of the target body 21. The first layer 22 includes: a first layer body 221 disposed on the upper surface of the target body 21; a first portion 222 formed on the side of the first layer body 221 away from the target body 21, the first portion 222 having a first extending direction; and a second portion 223 formed on the side of the first layer body 221 away from the target body 21, the second portion 223 having a second extending direction; wherein the first extending direction and the second extending direction have an included angle α.
[0038] Exemplarily, in the embodiments of this application, the target body 21, as the basic part of the target 20, is typically block-shaped or plate-shaped, used to support other structures and participate in the electrode formation process. The target body 21 in the embodiments of this application is generally made of high-purity metals (e.g., aluminum (Al), hafnium (Hf), tantalum (Ta), titanium (Ti), niobium (Nb), zinc (Zn), etc.) or alloys (i.e., mixtures obtained by melting, dissolving, electrolyzing, alloying, etc., of at least two of the metals listed above), used to provide a sputtering deposition material source for depositing electrode films on the wafer.
[0039] In practice, the wafer and the target material 20 of the electrode are placed together in the chamber. In the vacuum environment of the chamber, the wafer and the target material 20 are positioned opposite each other. High-energy plasma (e.g., argon ions) generated by gas discharge is used to bombard the surface of the target material 20, causing the target atoms to detach and deposit on the wafer, thereby forming an electrode thin film.
[0040] The dimensions, surface shape, and surface geometry of the target body 21 can be determined according to the specific sputtering equipment and process requirements. For example, the surface shape can be circular, rectangular, square, etc., the thickness of the target body 21 can be between a few millimeters and several hundred millimeters, and the surface geometry can be either planar or curved. This application embodiment does not specifically limit these aspects.
[0041] A first layer 22 is disposed on the upper surface of the target body 21 and is tightly connected to the target body 21. It plays a key role in the electrode fabrication process (i.e., improving the performance of the deposited electrode film) and is used to optimize the performance of the target 20. Specifically, the first layer 22 includes: a first layer body 221, a first part 222, and a second part 223.
[0042] The first layer 221, serving as the base of the first layer 22, is disposed on the upper surface of the target body 21. It refers to the flat base portion of the first layer 22 that directly contacts the surface of the target body 21, serving as the load-bearing layer for the first and second parts. Its material can be the same as that of the target body 21.
[0043] In this embodiment, the first layer 221 can be deposited on the target body 21 by methods such as physical vapor deposition (PVD) or chemical vapor deposition (CVD). Its thickness can be set according to the required electrode film performance and actual process, for example, between 0.5 mm and 5 mm. This embodiment does not specifically limit this.
[0044] The first portion 222 is formed on the side of the first layer body 221 away from the target body 21. The first portion 222 can be a protrusion or a recess (the figure only shows the first portion 222 as a protrusion), and this application embodiment does not specifically limit it.
[0045] In the embodiments of this application, the shape and size of the first portion 222 will affect the subsequent sputtering process. Regarding the shape of the first portion 222, for example, when the first portion 222 is a protrusion, it can enhance the sputtering intensity of a local area; when the first portion 222 is a recess, it can reduce the sputtering intensity of a local area, thereby achieving control over the thickness of each area of the electrode film deposited on the wafer.
[0046] Regarding the dimensions of the first part 222, its thickness can be between 0mm and 10mm, for example, 0mm, 10mm, or any value between 0mm and 10mm, such as 5mm. The maximum width of its upper surface is between 15mm and 100mm, for example, 15mm, 100mm, or any value between 15mm and 100mm, such as 80mm. This application embodiment does not specifically limit the thickness of the first part 222 or the maximum width of its upper surface; these can be adjusted according to actual process requirements.
[0047] The second part 223 is also formed on the side of the first layer body 221 away from the target body 21. The second part 223 can be a protrusion or a recess (the figure only shows the second part 223 as a recessed part), and this application embodiment does not specifically limit it.
[0048] In this embodiment, similar to the first part 222, the shape and size of the second part 223 also affect the subsequent sputtering process. It can cooperate with the first part 222 to deposit electrode films of a specific shape on the wafer to optimize the performance of the electrode films. This embodiment does not specifically limit the shape and size of the second part 223; it can be adjusted according to actual process requirements.
[0049] As an optional embodiment of this application, the shape of the first part 222 and the shape of the second part 223 are different. Specifically, when the first part 222 is a protrusion, the second part 223 is a recess; when the first part 222 is a recess, the second part 223 is a protrusion.
[0050] For example Figure 2 As shown, when the second part 223 is a recessed part, the second part 223 can be a recessed area between two first parts 222 (i.e. two protrusions).
[0051] In this embodiment, the first portion 222 has a first extending direction, and the second portion 223 has a second extending direction. An angle α is formed between the first extending direction and the second extending direction.
[0052] Exemplary, in embodiments of this application, the definition of the extension direction can be varied. In some optional embodiments of this application, the extension direction can be a direction extending from the center point of the wider base surface to the center point of the narrower base surface. Based on this, Figure 2 The first extension direction of the first part 222 can be the vertical upward direction, and the second extension direction of the second part 223 can be the vertical downward direction. Therefore, the angle α between the first extension direction and the second extension direction is 180°.
[0053] In some alternative embodiments of this application, the extension direction may also be a direction extending from the center point of the lower bottom surface to the center point of the upper bottom surface. Based on this, Figure 2 The first extension direction of the first part 222 can be the vertical upward direction, and the second extension direction of the second part 223 is also the vertical upward direction. Therefore, the angle α between the first extension direction and the second extension direction is 0°.
[0054] It should be noted that, Figure 2 The first part 222 and the second part 223 are both formed perpendicularly to the first layer body 221, but Figure 2 The examples shown are merely illustrative and not intended to limit this application. The first portion 222 and the second portion 223 may be formed obliquely on the first layer body 221. Based on this, the angle α between the first extension direction and the second extension direction can satisfy the relationship 0°≤α≤180°.
[0055] This application embodiment optimizes the target structure of the electrode, which is beneficial to improving the atomic density and distribution of the electrode film deposited on the wafer, and to improving the degree of difference in metal atom content of the electrode film deposited in different regions of the wafer. This, in turn, helps to improve the uniformity of Rs distribution of the electrode film in different regions of the wafer, especially to improve the uniformity of metal atom content of the electrode film in the central and edge regions of the wafer, thereby improving the performance of RRAM. For example, RRAM cells in different regions of the wafer have more consistent durability and retention.
[0056] As an optional embodiment of this application, the first part 222 includes M protrusions and the second part 223 includes N recesses; or, the first part 222 includes M recesses and the second part 223 includes N protrusions. In this embodiment, M≥1 and N≥1.
[0057] For example, in the embodiments of this application, M and N can satisfy the following conditions: M is greater than N, M is equal to N, or M is less than N. For example, when the first part 222 includes M protrusions and the second part 223 includes N recesses, if M is greater than N, a pattern dominated by protrusions can be formed on the first layer body 221; when M is equal to N, a uniformly distributed pattern can be formed on the first layer body 221; when M is less than N, a pattern dominated by recesses can be formed on the first layer body 221.
[0058] In the embodiments of this application, when the first part 222 and the second part 223 are distributed on the first layer body 221, the first part 222 and the second part 223 can be distributed alternately on the first layer body 221. At this time, M-N = -1 or 0 or 1, which can form a relatively uniform electrode film and avoid the situation of excessive deposition of metal atoms in local areas and insufficient deposition of metal atoms in local areas.
[0059] In this embodiment, the longitudinal section of the protrusion can be one of a trapezoid, a rounded trapezoid, a rectangle, a rounded rectangle, or a semicircle. Here, the longitudinal section refers to the cutting interface along the thickness direction of the target material 20. Correspondingly, the upper surface of the protrusion can be planar or curved. This embodiment does not specifically limit the shape of the longitudinal section or the shape of the upper surface of the protrusion.
[0060] In the embodiments of this application, the longitudinal section of the above-mentioned recessed portion can also be one of trapezoidal, rounded trapezoidal, rectangular, rounded rectangle or semicircle. Correspondingly, the upper surface of the recessed portion can be planar or arc-shaped. The embodiments of this application do not specifically limit the shape of the longitudinal section and the shape of the upper surface of the recessed portion.
[0061] In this embodiment, the sputtering effect of protrusions and recesses of different longitudinal cross-sections varies. In this embodiment, the appropriate shape of the protrusions and recesses of the longitudinal cross-section can be selected according to actual process requirements.
[0062] As an optional embodiment of this application, the target 20 satisfies at least one of the following conditions: the center point of the bottom surface of the first layer body 221 coincides with the center point of the upper surface of the target body 21 in the vertical direction; the center point of the bottom surface of the second part 223 coincides with the center point of the upper surface of the target body 21 and / or the center point of the top surface of the first layer body 221 in the vertical direction; the center point of the bottom surface of the first part 222 coincides with the center point of the upper surface of the target body 21 and / or the center point of the top surface of the first layer body 221 in the vertical direction, ensuring the symmetry of the structure and optimizing the sputtering efficiency of the central region of the target.
[0063] Figure 3 A specific example diagram of a target material including a first sub-region and a second sub-region, according to some embodiments of this application, is shown.
[0064] like Figure 3 As shown, the second part 223 includes a first sub-region 223-1 and a second sub-region 223-2. The center point of the bottom surface of the first sub-region 223-1 coincides with the center point of the top surface of the first layer body 221 in the vertical direction. The second sub-region 223-2 is formed at the end of the first layer 22 in the horizontal direction.
[0065] For example, Figure 3 The first sub-region 223-1 and the second sub-region 223-2 are both recessed portions. The center point of the bottom surface of the first sub-region 223-1 coincides with the center point of the top surface of the first layer body 221 in the vertical direction, forming a vertically aligned structure.
[0066] It should be noted that the center point of the bottom surface of the first sub-region 223-1 and the center point of the top surface of the first layer body 221 may not coincide in the vertical direction, and can be adjusted according to actual process requirements.
[0067] In this embodiment, the second sub-region 223-2 is formed at the lateral end of the first layer 22 to adjust the sputtering rate of metal atoms in the edge region.
[0068] The shape and size of the first sub-region 223-1 and the second sub-region 223-2 in the embodiments of this application can be adjusted according to actual process requirements, and the embodiments of this application do not impose specific limitations on this.
[0069] Figure 4 A specific example diagram of a target material including a first sub-region and a third sub-region, according to some embodiments of this application, is shown.
[0070] like Figure 4 As shown, the second part 223 includes a first sub-region 223-1 and a third sub-region 223-3. The center point of the bottom surface of the first sub-region 223-1 coincides with the center point of the top surface of the first layer body 221 and the center point of the top surface of the third sub-region 223-3 in the vertical direction.
[0071] For example, Figure 4 The first sub-region 223-1 and the third sub-region 223-3 are both recessed portions. The center point of the bottom surface of the first sub-region 223-1 coincides with the center point of the top surface of the first body 221 and the center point of the top surface of the third sub-region 223-3 in the vertical direction, forming a vertically aligned structure, so as to further adjust the sputtering rate of metal atoms in the central region and meet the electrode thin film with different performance requirements.
[0072] The shape and size of the first sub-region 223-1 and the third sub-region 223-3 in the embodiments of this application can be adjusted according to actual process requirements, and the embodiments of this application do not impose specific limitations on this.
[0073] As an optional embodiment of this application, the uniformity percentage of the sheet resistance of the electrode film formed by the target deposition of the electrode is less than or equal to 27%.
[0074] For example, in this embodiment, the sheet resistance is an important parameter for characterizing the conductivity of the electrode film. A smaller value indicates better uniformity of the electrode film, and the uniformity of the sheet resistance characterizes the fluctuation of sheet resistance in various regions of the electrode film. It can be calculated by sampling the electrode film and based on the sheet resistance of each sampling point. There are many possible calculation methods; for example, it can be calculated using the following formula:
[0075] Uniformity percentage = (maximum Rs value - minimum Rs value) / average Rs value * 100% (Formula 1)
[0076] Wherein, the maximum value of Rs represents the maximum value of Rs at the sampling point; the minimum value of Rs represents the minimum value of Rs at the sampling point; and the average value of Rs represents the average value of Rs calculated for each sampling point.
[0077] In the embodiments of this application, the sheet resistance uniformity percentage of the electrode film formed by the target deposition of the electrode is less than or equal to 27%, with small fluctuations, and the uniformity of the formed electrode film is good.
[0078] Figure 5A - Figure 5D Example diagrams showing different target shapes and the distribution of Rs in the formed electrode films according to some embodiments of this application are shown.
[0079] The following is combined with Figure 5A - Figure 5D Please provide an explanation, such as Figure 5A As shown, Figure 5A When the target material is sputtered onto the wafer using the method described in the above embodiments, the sheet resistance Rs of the electrode film formed in the central region of the wafer is low, while the sheet resistance Rs of the electrode film in the edge region of the wafer is high. This further leads to RRAM memory cells fabricated in different regions of the same wafer having electrodes with significantly different Rs values. These electrodes with significantly different Rs values produce significantly different performance differences for their respective RRAMs. Specifically, this results in different performance differences for RRAMs in different regions of the same wafer (e.g., different forming voltages, read voltages, write voltages, retention, endurance, etc.), which affects the performance of the memory.
[0080] Therefore, in this embodiment, the sheet resistance Rs of the electrode film in the center region of the wafer needs to be adjusted so that the sheet resistance Rs of the electrode film in the center region of the wafer is close to the sheet resistance Rs of the electrode film in the edge region of the wafer, that is, close to the horizontal line Rs in the figure.
[0081] Based on this, the shape of the target material can be adjusted, i.e., reducing the target material thickness in areas with higher Rs or increasing the target material thickness in areas with lower Rs, to adjust the overall Rs uniformity of the electrode film. For example... Figure 5B As shown, Figure 5B The uniformity of the Rs of the electrode film on the wafer is adjusted by increasing the thickness of the target material in the central region where Rs is low. Variations in the distance between the target and the wafer affect the plasma density; a smaller distance results in a higher plasma density, leading to greater nitridation of the target and a higher nitrogen content in the electrode film deposited on the wafer, thus increasing Rs. Therefore, for... Figure 5B Therefore, by increasing the thickness of the target material in the region with lower Rs in the middle of the wafer, the overall Rs uniformity is improved.
[0082] from Figure 5B As can be seen from the formed electrode film, the Rs value of the electrode film deposited in the middle region of the wafer increases and has exceeded the Rs horizontal line. At this point, the thickness of the target center region can be reduced to decrease the Rs value of the electrode film in the middle region of the wafer. For details, please refer to [link to relevant documentation]. Figure 5C The structure of the target material shown is in Figure 5B Based on the target material, the thickness of the central region of the target material is reduced by a point so that the Rs value of the electrode film in the middle region of the wafer is adjusted.
[0083] Similarly, the target thickness in areas where the Rs value has not been reached can be adjusted. For details, please refer to [link / reference needed]. Figure 5DBy setting protrusions and depressions of different sizes on the target surface, the Rs value of the final electrode film is made uniform, thus improving the performance of the memory.
[0084] While numerous embodiments of this application have been shown and described herein, it will be apparent to those skilled in the art that such embodiments are provided by way of example only. Many modifications, alterations, and alternatives will arise for those skilled in the art without departing from the spirit and intent of this application. It should be understood that various alternatives to the embodiments of this application described herein may be employed in the practice of this application. The appended claims are intended to define the scope of protection of this application and therefore cover equivalents or alternatives within the scope of these claims.
Claims
1. A target material for an electrode, characterized in that, The target body includes a target body and a first layer disposed on the upper surface of the target body, wherein the first layer includes: The first body layer is disposed on the upper surface of the target body; A first portion is formed on the side of the first layer body away from the target body, and the first portion has a first extending direction; and The second part is formed on the side of the first layer body away from the target body, and the second part has a second extending direction; Wherein, there is an angle α between the first extending direction and the second extending direction.
2. The target material according to claim 1, characterized in that, The first portion includes a protrusion, and the second portion includes a recess; or, the first portion includes a recess, and the second portion includes a protrusion.
3. The target material according to claim 2, characterized in that, The first part includes M protrusions, and the second part includes N recesses; or, the first part includes M recesses, and the second part includes N protrusions; and M and N satisfy the following conditions: M is greater than N, or M is equal to N, or M is less than N.
4. The target material according to claim 3, characterized in that, The first part and the second part are interleaved on the first layer body, wherein MN = -1 or 0 or 1.
5. The target material according to claim 2, characterized in that, The target material must meet at least one of the following conditions: The center point of the bottom surface of the first layer body coincides with the center point of the upper surface of the target body in the vertical direction; The center point of the bottom surface of the second part coincides with the center point of the upper surface of the target body and / or the center point of the top surface of the first layer body in the vertical direction; The center point of the bottom surface of the first part coincides with the center point of the upper surface of the target body and / or the center point of the top surface of the first layer body in the vertical direction.
6. The target material according to claim 2, characterized in that, The longitudinal section of the protrusion and / or the recess includes one of the following: trapezoid, rounded trapezoid, rectangle, rounded rectangle or semicircle.
7. The target material according to claim 1, characterized in that, The angle α between the first extension direction and the second extension direction satisfies the relationship 0°≤α≤180°.
8. The target material according to claim 2, characterized in that, The second part includes a first sub-region and a second sub-region. The center point of the bottom surface of the first sub-region coincides with the center point of the top surface of the first layer body in the vertical direction. The second sub-region is formed at the end of the first layer in the horizontal direction.
9. The target material according to claim 2, characterized in that, The second part includes a first sub-region and a third sub-region. The center point of the bottom surface of the first sub-region coincides with the center point of the top surface of the first layer body and the center point of the top surface of the third sub-region in the vertical direction.
10. The target material according to any one of claims 1-9, characterized in that, The sheet resistance uniformity percentage of the electrode film formed by the target deposition is less than or equal to 27%.
11. The target material according to any one of claims 1-9, characterized in that, The target material includes one or more of Al, Hf, Ta, Ti, Nb, and Zn.
12. The target material according to claim 1, characterized in that, In the longitudinal section of the target material, the maximum width of the upper surface of the first part is between 15mm and 100mm, and the thickness of the first part is between 0mm and 10mm.