IGBT parallel current sharing assembly

Abstract

The utility model discloses a kind of IGBT parallel current sharing components, including installation structure and at least one IGBT module;The installation structure includes heat sink, and multiple heat conductors are evenly provided on heat sink;The IGBT module is set on heat conductor one-to-one, and IGBT module includes two parallel IGBT modules, and diode and capacitor are connected between collector and emitter of IGBT module, the negative pole of diode is connected with the collector of IGBT module, the positive pole of diode is connected with the first end of capacitor, the second end of capacitor is connected with the emitter of IGBT module.To solve the problem that multiple IGBT parallel use in prior art has larger turn-on delay, and current consistency is poor.

Description

Technical Field

[0001] This utility model relates to the field of power electronics technology, specifically to an IGBT parallel current sharing component. Background Technology

[0002] As a core component in industrial control and automation, IGBTs play a crucial role in circuit regulation. They can precisely adjust parameters such as voltage, current, frequency, and phase in circuits based on signal commands from industrial devices, thereby achieving precise control. IGBTs have a wide range of applications, covering industrial manufacturing, the automotive industry, the communications industry, and consumer electronics, with their main voltage applications ranging from 600V to above.

[0003] In current IGBT parallel drive applications, most use the same drive signal. However, in certain special cases, a driver IC may not be able to simultaneously drive multiple IGBTs, requiring the use of two or four driver ICs. This leads to differences in the turn-on time of different driver ICs for their respective IGBTs. When IGBT turn-on times are inconsistent, this time difference can severely impact system reliability in high-current applications. Specifically, at the moment of turn-on, some IGBTs turn on earlier, and the current rushes to these earlier-turned-on devices, causing them to fail due to excessive current. Furthermore, in printed circuit board (PCB) routing design, due to limitations in actual manufacturing processes, it's impossible to guarantee that all switching transistors are equidistant from the input ports. The inductive reactance introduced by the PCB's parasitic parameters suppresses current variations, inevitably leading to current inconsistencies when multiple IGBTs are connected in parallel. Utility Model Content

[0004] The purpose of this invention is to solve the problems of large turn-on delay and poor current consistency when multiple IGBTs are used in parallel in the prior art, and to provide an IGBT parallel current sharing component.

[0005] To address the shortcomings of the aforementioned technical problems, the present invention adopts the following technical solution: an IGBT parallel current sharing component, comprising an installation structure and at least one IGBT module;

[0006] The mounting structure includes a heat sink, on which multiple heat-conducting elements are uniformly arranged;

[0007] The IGBT modules are arranged one-to-one on the heat-conducting components. Each IGBT module includes two IGBT modules connected in parallel. A diode and a capacitor are connected between the collector and emitter of the IGBT module. The negative terminal of the diode is connected to the collector of the IGBT module, the positive terminal of the diode is connected to the first terminal of the capacitor, and the second terminal of the capacitor is connected to the emitter of the IGBT module.

[0008] As a further optimization of the IGBT parallel current sharing component of this utility model: the heat sink includes a rectangular heat sink plate with multiple parallel heat sinks on the heat sink plate, and a gap is left between two adjacent heat sinks. The heat conduction component includes a rectangular support plate with snap-fit ​​holes on the back of the support plate to accommodate the heat sinks. Two IGBT modules in the IGBT module are distributed on the front of the support plate along the length direction of the heat conduction component.

[0009] As a further optimization of the IGBT parallel current sharing component of this utility model: multiple carrier plates are evenly arranged along the length direction of the heat sink, and limit posts are provided between two adjacent carrier plates.

[0010] As a further optimization of the IGBT parallel current sharing component of this utility model: multiple carrier plates are evenly arranged along the width direction of the heat sink.

[0011] As a further optimization of the IGBT parallel current sharing component of this utility model: the heat sink is provided with multiple heat dissipation fins on the side of the heat sink away from the support plate.

[0012] Actuating blocks are fixedly provided on both sides of the bearing plate along its length.

[0013] As a further optimization of the IGBT parallel current sharing component of this utility model: the heat sink is provided with two symmetrically arranged positioning ears.

[0014] As a further optimization of the IGBT parallel current sharing component of this utility model: the diode includes a Zener diode, and the capacitor includes a high-voltage thin-film capacitor.

[0015] Compared with the prior art, the present invention has the following beneficial effects:

[0016] This invention achieves effective current regulation by placing a Zener diode and a high-voltage thin-film capacitor between the collector and emitter of the IGBT module. When the parasitic inductance is large, the large inductance and small current characteristic prevent the Zener diode from breaking down, thus avoiding the release of the energy stored in the high-voltage thin-film capacitor and effectively preventing a sharp rise in current. Conversely, when the parasitic inductance is small, the small inductance and relatively large current characteristic cause the Zener diode to break down, releasing the energy stored in the high-voltage thin-film capacitor. At the moment of switch-on, the high-voltage thin-film capacitor rapidly releases its stored energy, causing the current to quickly reach a balanced state across different branches, ultimately achieving the ideal effect of consistent current in all parallel branches. Furthermore, the common-mode inductor configured in the IGBT module's drive circuit plays a crucial role when the driver IC is turned on. Based on the mutual inductance effect, the common-mode inductor can induce inductance in another IGBT module connected in parallel, thereby charging the parallel IGBT module and ensuring that the parallel IGBT modules can start synchronously. This significantly improves the synchronization between multiple IGBT modules, greatly enhances the reliability of the drive, and effectively improves the consistency of the current.

[0017] This invention achieves a stable connection between multiple IGBT modules and provides efficient auxiliary heat dissipation by incorporating auxiliary and heat dissipation components. The heat pipes in the heat dissipation component and the snap-fit ​​holes on the support plate of the auxiliary component are mutually compatible, greatly facilitating the easy installation of the IGBT modules onto the heat dissipation component for use. During installation, the heat pipes and the limiting posts on the support plate work together to ensure that the multiple IGBT modules are evenly spaced. This effectively reduces the possibility of heat accumulation due to the clustering of multiple IGBT modules, ensuring continuous and effective heat dissipation and guaranteeing stable operation. Attached Figure Description

[0018] Figure 1 This is a front view structural diagram of Embodiment 1 of the present utility model;

[0019] Figure 2 This is a partial structural schematic diagram of Embodiment 1 of the present invention;

[0020] Figure 3 This is a front view structural diagram of Embodiment 2 of the present invention;

[0021] Figure 4 This is a partial structural schematic diagram of Embodiment 2 of the present invention;

[0022] Figure 5 This is a schematic diagram of the IGBT circuit structure of this utility model;

[0023] Figure 6This is a schematic diagram of the IGBT circuit waveform structure before the improvement of this utility model;

[0024] Figure 7 This is a schematic diagram of the waveform structure of the improved IGBT of this utility model;

[0025] The markings in the diagram are: 1. Heat sink; 101. Heat sink fins; 102. Positioning ear; 103. Heat sink plate; 104. Heat sink pipe; 2. Auxiliary component; 201. Toggle block; 202. Support plate; 203. Snap-fit ​​hole; 3. Limiting post; 4. IGBT module. Detailed Implementation

[0026] To better understand this utility model, the following embodiments further illustrate the content of this utility model, but the content of this utility model is not limited to the following embodiments.

[0027] <Example 1>

[0028] like Figure 1 As shown, an IGBT parallel current sharing component comprises an IGBT module 4 consisting of two IGBT modules, a Zener diode, and a high-voltage film capacitor between the collector and emitter of each IGBT module. Specifically, the negative terminal of the Zener diode is connected to the collector of the IGBT module, the positive terminal of the Zener diode is connected to the first terminal of the high-voltage film capacitor, and the second terminal of the high-voltage film capacitor is connected to the emitter of the IGBT module. When the IGBT module is in the off state, the collector voltage rises rapidly, at which point the Zener diode breaks down and conducts, and the high-voltage film capacitor begins to charge. For parallel switches with large parasitic inductance, the current is too small to break down the Zener diode and release the energy stored in the high-voltage film capacitor, thus effectively preventing a sharp rise in current. For parallel switches with small parasitic inductance, the current is relatively large, and this larger current can break down and pass through the high-voltage film capacitor. At the moment the switch turns on, the high-voltage film capacitor can quickly release the stored energy, promoting current balance between different branches, thereby achieving the ideal effect of the same current in each parallel branch. The Zener diode only conducts and charges the high-voltage film capacitor when the VCE voltage rises to near the rated voltage, such as when the IGBT module 4 is in the off state. This effectively avoids the problem of slow IGBT turn-off caused by premature capacitor charging and further improves the turn-off speed of IGBT module 4.

[0029] Furthermore, a common-mode inductor is also included in the drive circuit of IGBT module 4. When the driver IC starts conducting, due to the inherent delay of the optocoupler, the turn-on signal of the driver IC cannot be delivered in time. At this time, the common-mode inductor will induce inductance in the other IGBT module 4 connected in parallel based on the mutual inductance effect, thereby charging the parallel IGBT module 4 and enabling the parallel IGBT modules 4 to start simultaneously. This significantly accelerates the synchronization between multiple IGBT modules 4 to a certain extent and greatly improves the reliability of the drive.

[0030] Common mode inductor is Figure 1 L1 and L2 are wound on the same magnetic ring, and their corresponding terminals are aligned. The newly added components L19, L20, R31, R32, R33, R34, L21, and L22 are mainly used to simulate parasitic parameters of the PCB. By comparing the situation before and after adding the Zener diodes U1, C2, U2, and C1 and the film capacitor, as shown... Figure 2 As shown, in traditional parallel IGBT modules 4, the current imbalance is very obvious when turned on; while... Figure 3 As shown, the improved and optimized parallel IGBT modules 4 have significantly improved the problem of current imbalance when the current is turned on, greatly enhancing the reliability of multiple IGBT modules 4 used in parallel.

[0031] like Figure 4 and Figure 5 As shown, multiple IGBT modules 4 are respectively mounted on multiple heat-conducting components 2. The multiple heat-conducting components 2 cooperate with the heat sink 1 and are fixedly installed in corresponding positions within the industrial device. The coordinated cooperation of the multiple heat-conducting components 2 and the heat sink 1 ensures that a certain distance is maintained between the multiple parallel IGBT modules 4, effectively reducing the heat accumulation phenomenon caused by the multiple parallel IGBT modules 4 clustering together, and significantly improving the stability of the multiple IGBT modules 4 during operation to a certain extent. The heat sink 1 includes a rectangular heat sink 103 and multiple heat dissipation fins 101 evenly distributed on the bottom surface of the heat sink 103. Multiple heat dissipation pipes 104 perpendicular to the heat sink fins 101 are arranged within them, with a gap between adjacent heat dissipation pipes 104, and they are arranged through the top surface of the heat sink 103. The heat sink 104 and the heat conductor 2 are engaged with each other via snap-fit ​​holes 203. These snap-fit ​​holes 203 are located on the bottom surface of the strip-shaped support plate 202. This allows operators to rationally distribute multiple IGBT modules 4 according to the number of parallel IGBTs, thereby reducing the probability of heat accumulation among the multiple IGBT modules 4. Simultaneously, it also facilitates the separation of the support plate 202 from the heat sink 1, enabling disassembly, maintenance, and replacement of the IGBT modules 4.

[0032] Two positioning ears 102 are provided in the width direction of the heat sink 103, which can help the operator fix the heat sink 103 in a suitable position. The heat dissipation fins 101 are arranged along the length direction of the heat sink 103, the heat dissipation pipes 104 are arranged along the width direction of the heat sink 103, and the width direction of multiple support plates 202 is set along the length direction of the heat sink 103. Multiple C-shaped snap-fit ​​holes 203 are opened on the heat sink 103. This design facilitates the simultaneous connection of the heat sink 103 with multiple heat dissipation pipes 104, and enhances the heat dissipation effect of the heat sink 103 on the IGBT module 4 while ensuring the connection stability between the heat sink 103 and the heat dissipation pipes 104. A lever block 201 is fixedly installed on both sides of the heat sink 103 in the width direction. The operator can easily pull the support plate 202 through the lever block 201 to connect or disconnect the snap-fit ​​hole 203 from the heat dissipation pipe 104. A limiting post 3 is fixed on one side of the support plate 202 along the length of the heat sink 103. When the operator places multiple support plates 202 on the heat sink 103, the limiting post 3 can keep a certain gap between the multiple support plates 202, ensuring that the multiple IGBT module 4 pieces maintain a suitable distance, thereby further reducing the probability of heat accumulation between multiple IGBT modules 4 connected in parallel.

[0033] <Example 2>

[0034] like Figure 6 and Figure 7 As shown, this embodiment is basically similar to Embodiment 1, except that: the heat dissipation fins 101 are arranged along the length of the heat dissipation plate 103, the heat dissipation pipes 104 are evenly distributed along the width of the heat dissipation plate 103, and the bottom surface of the support plate 202 is provided with a single snap-fit ​​hole 203 along its length. The snap-fit ​​hole 203 allows multiple support plates 202 to be sequentially arranged along the width of the heat dissipation plate 103. The snap-fit ​​hole 203 can snap onto the portion of any heat dissipation pipe 104 located on the top surface of the heat dissipation plate 103, thereby ensuring stable heat dissipation while maintaining the connection stability between the support plate 202 and the heat dissipation pipe 104. At the same time, the spacing between the multiple heat dissipation pipes 104 also provides convenience for operators to maintain the gap between the multiple IGBT modules 4 when installing the support plate 202 and the IGBT module 4, effectively reducing the possibility of heat accumulation between multiple parallel IGBT modules 4.

[0035] The specific embodiments of this utility model have been described above. It should be understood that this utility model is not limited to the specific embodiments described above, and those skilled in the art can make various modifications or variations within the scope of the claims, which do not affect the substantive content of this utility model.

Claims

1. A parallel current sharing component for IGBTs, characterized in that: Includes the mounting structure and at least one IGBT module (4); The installation structure includes a heat sink (1), and a plurality of heat-conducting components (2) are uniformly arranged on the heat sink (1); The IGBT modules (4) are arranged one-to-one on the heat-conducting components (2). The IGBT modules (4) include two IGBT modules connected in parallel. A diode and a capacitor are connected between the collector and emitter of the IGBT modules. The negative terminal of the diode is connected to the collector of the IGBT module, the positive terminal of the diode is connected to the first end of the capacitor, and the second end of the capacitor is connected to the emitter of the IGBT module.

2. The IGBT parallel current sharing component as described in claim 1, characterized in that: The heat sink (1) includes a rectangular heat sink plate (103), on which a plurality of parallel heat sink pipes (104) are provided, and a gap is left between two adjacent heat sink pipes (104). The heat conduction component (2) includes a rectangular support plate (202), and a snap-fit ​​hole (203) for accommodating the heat sink pipes (104) is opened on the back of the support plate (202). Two IGBT modules in the IGBT module (4) are distributed on the front of the support plate (202) along the length direction of the heat conduction component (2).

3. The IGBT parallel current sharing component as described in claim 2, characterized in that: Multiple support plates (202) are evenly arranged along the length of the heat sink (103), and a limit post (3) is provided between two adjacent support plates (202).

4. The IGBT parallel current sharing component as described in claim 2, characterized in that: Multiple support plates (202) are uniformly arranged along the width direction of the heat sink (103).

5. The IGBT parallel current sharing component as described in claim 2, characterized in that: The heat sink (103) has multiple heat dissipation fins (101) on the side facing away from the support plate (202).

6. The IGBT parallel current sharing component as described in claim 2, characterized in that: Both sides of the bearing plate (202) along its length are fixedly provided with actuating blocks (201).

7. The IGBT parallel current sharing component as described in claim 2, characterized in that: The heat sink (103) is provided with two symmetrically arranged positioning ears (102).

8. The IGBT parallel current sharing component as described in claim 1, characterized in that: The diode includes a Zener diode, and the capacitor includes a high-voltage thin-film capacitor.

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