A SiPM detection array module with high front-end integration
By using a compact SiPM detector array module design and a reverse Carnot cycle cooling system, the problem of excessive temperature of SiPM arrays in large-area applications is solved, achieving high-efficiency detection performance and reliability while reducing the size and weight of the equipment.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- INST OF HIGH ENERGY PHYSICS CHINESE ACAD OF SCI
- Filing Date
- 2025-07-10
- Publication Date
- 2026-06-26
AI Technical Summary
In applications such as high-energy physics, astronomical observation, medical imaging, and nuclear radiation monitoring, SiPM arrays have limited dynamic range and require large-area array design. However, the high power consumption of high-performance ASICs leads to excessively high SiPM temperatures, affecting detection performance and reliability.
The SiPM detector array module, which is highly integrated at the front end, reduces the signal transmission distance between the SiPM array and the ASIC chip through a compact structural design and a microfluidic heat dissipation system. It also utilizes a reverse Carnot cycle cooling medium for effective heat dissipation, ensuring that the temperature is controlled within an appropriate range.
This design achieves a large-area, low-dead-zone SiPM array, reducing signal transmission distance and device size, improving detection performance and reliability, while also reducing overall weight and cost.
Smart Images
Figure CN224417750U_ABST
Abstract
Description
Technical Field
[0001] This utility model belongs to the field of detector equipment manufacturing and relates to a compact SiPM detector array module. Background Technology
[0002] Silicon photomultiplier tubes (SiPMs) are a novel, small, and inexpensive high-sensitivity low-light detection device. They possess advantages such as low bias voltage, high photon detection efficiency, and insensitivity to magnetic field changes, making them easy to integrate with scintillation media or electronic systems to create compact, high-performance scintillator detectors. However, the small size and limited dynamic range of a single SiPM package restricts its application in high-range detection. To improve the detection capability of light with a large dynamic range, SiPMs need to be arrayed with large areas and low dead zones in various applications, including high-energy physics, astronomical observation, medical imaging, and nuclear radiation monitoring, to meet the detection requirements of large ranges and high light intensities in different application scenarios.
[0003] In recent years, with the continuous advancement of technological innovation, the design of arrayed SiPMs is rapidly developing towards integration. In particular, the integration and application of high-performance application-specific integrated circuits (ASICs) at the near end of SiPM arrays can not only significantly reduce the overall size of the detector but also greatly shorten the signal transmission distance within the SiPM array, thereby reducing the risk of signal attenuation and spatial electromagnetic interference, providing strong technical support for diverse application environments. However, high-performance ASICs typically have high power consumption. If the distance between them and the SiPM sensor array is too close, it can lead to excessively high SiPM temperatures, affecting their performance. First, high temperatures significantly increase the dark count rate (DCR) of the SiPM, generating random noise signals in the absence of light, making it more difficult to distinguish between signal and noise. Simultaneously, high temperatures reduce the gain of single-photon avalanche diodes (SPADs), thus reducing the amplitude of the output signal and significantly lowering the signal-to-noise ratio (SNR). Second, high temperatures also reduce the photon detection efficiency of the SiPM, affecting its ability to detect weak light signals. Third, high temperatures can lead to decreased stability of the SiPM's output signal, such as increased signal fluctuations or drift. Finally, in radiation-background application environments, high temperatures exacerbate radiation damage to SiPMs, severely shortening the device's lifespan.
[0004] Therefore, effective temperature control measures must be adopted to keep the operating temperatures of the SiPM and ASIC within an appropriate range, while meeting the requirements of the large area, low dead zone design of the SiPM array and the integration of ASIC, thereby improving the detection performance and reliability of the entire detector. Utility Model Content
[0005] This utility model relates to a highly integrated SiPM detector array module. It aims to reduce the signal transmission distance between the SiPM array and the high-performance ASIC chip through a compact structural design, while meeting the requirements of a large area and low dead zone of the SiPM array. At the same time, it achieves good heat dissipation for both the SiPM array and the high-performance ASIC chip, so as to improve the detection performance and reliability of the detector and reduce the size and weight of the entire device.
[0006] The technical solution of this utility model is as follows:
[0007] A highly integrated SiPM detector array module is characterized by comprising a circuit board 1, a SiPM array 2, an ASIC chip 3, supporting electronic components 4, connectors 5, and connecting pipes 6; the ASIC chip 3 and the supporting electronic components 4 constitute a front-end electronics system.
[0008] The upper surface of the circuit board 1 is provided with a plurality of first metal pads 7 for connecting the SiPM array 2; the lower surface of the circuit board 1 is provided with a plurality of second metal pads 8 for connecting the ASIC chip 3, supporting electronic components 4 and connectors 5; the circuit board 1 includes several layers of circuit structure 9, and the circuit structure 9 of different layers are interconnected through metallized vias 10.
[0009] The connector 5 supplies power to the SiPM array 2 and the front-end electronics system through the circuit structure 9 and the metallized via 10, and interconnects with the back-end electronics system.
[0010] The circuit board 1 is embedded with microchannels, and the inlet and outlet of the microchannels are respectively connected to a connecting pipe 6 for inputting and outputting circulating cooling medium to transfer the heat of the SiPM array 2 and the ASIC chip 3 to the external environment.
[0011] Furthermore, the connector 6 connected to the microchannel outlet of the circuit board 1 is connected to the compressor 15, the condenser 16 and the slender pipe 17 in sequence through a metal pipe. The slender pipe 17 is connected to the connector 6 connected to the microchannel inlet of the circuit board 1, forming a complete reverse Carnot cycle loop.
[0012] Furthermore, the microchannel includes multiple sets of channels 13, each set of channels 13 including a narrow channel and a wide channel, wherein the length of the narrow channel is less than the length of the wide channel.
[0013] Furthermore, a set of pipes 13 is provided between the two adjacent layers of the circuit structure 9.
[0014] Furthermore, the metallized vias 10 are provided between two adjacent sets of pipes 13.
[0015] Furthermore, the ASIC chip 3 is arranged in the middle region of each group of channels 13 in the microchannel.
[0016] Furthermore, the connector 6 is made of gold-plated Kovar alloy, and a third metal pad 14 is provided at the inlet and outlet of the microchannel for welding to the connector 6.
[0017] Furthermore, the circuit board 1 is made of alumina ceramic, silicon nitride ceramic, aluminum nitride ceramic, or silicon carbide ceramic.
[0018] Furthermore, the circuit board 1 has a cuboid structure, and the inlet and outlet of the microchannel are located at both ends of the length direction of the circuit board 1.
[0019] The highly integrated SiPM detector array module of this application mainly consists of a circuit board 1, a SiPM array 2, an ASIC chip 3, supporting electronic components 4, connectors 5, and connecting pipes 6.
[0020] The circuit board 1 is made of highly thermally conductive and insulating materials such as alumina ceramic, silicon nitride ceramic, aluminum nitride ceramic, and silicon carbide ceramic. The circuit board 1 has a cuboid structure, with a width 0.4 mm to 1 mm larger than the product of the side length and number of individual SiPMs; the specific width depends on the dimensional tolerances and the number of SiPMs. Its length is 20 mm to 50 mm larger than the product of the side length and number of individual SiPMs, and its thickness is between 0.5 mm and 4 mm. Pads or circuits are provided on both sides of the circuit board 1. On one side, a first metal pad 7 is soldered to the pins of the SiPM array 2, forming a compactly arranged, elongated, large-area array on the circuit board. On the other side, a second metal pad 8 is soldered to the pins of multiple high-performance ASIC chips 3, supporting electronic components 4, and connectors 5. The circuit board employs a single-layer or multi-layer circuit structure 9, with different layers of circuit structures 9 interconnected through metallized vias 10. Through this circuit structure 9 and metallized vias 10, the signals from the SiPM array 2 can reach the front-end electronics system, composed of the ASIC chip 3 and supporting electronic components 4, with an extremely short transmission distance. Simultaneously, the connector 5 provides power to the SiPM array 2 and the front-end electronics system via the circuit structure 9 and metallized vias 10, and enables signal interconnection with the back-end electronics. This design not only optimizes signal transmission efficiency but also reduces the risk of signal attenuation and electromagnetic interference.
[0021] Because the multiple high-performance ASIC chips 3 are very close to the SiPM array 2, and the ceramic circuit board has excellent thermal conductivity, the temperature of the SiPM array 2 will rise rapidly without efficient heat dissipation measures, causing a decrease in the detection performance and reliability of the SiPM array. To avoid interfering with the SiPM array 2's capture of optical signals and with the interconnection between the connector 5 and the back-end electronics system, a microchannel structure is embedded in the ceramic plate, and a circulating cooling medium is introduced into the microchannel to transfer the heat from the SiPM array 2 and the multiple ASIC chips 3 to the external environment. Due to the limited thickness of the circuit board 1, the microchannel cross-sectional size is small, and the circuit board is relatively long. When the liquid cooling medium flows through the microchannel, the flow resistance is extremely high, requiring a high-pressure microfluidic pump with a very small flow rate for medium circulation cooling, resulting in extremely high costs. To reduce flow resistance, in addition to structural optimization, the microchannel plate also uses environmentally friendly, non-toxic, and non-flammable R134a refrigerant to form a circulating cooling medium inside the pipe, achieving cooling. The specific structure is as follows:
[0022] The cooling medium inlet and outlet pipes 6 are located at both ends along the length of the circuit board. Each pipe connects to a longitudinal cavity within the ceramic plate, namely the inlet cavity 11 and the outlet cavity 12. Multiple sets of pipes 13 connect the inlet cavity 11 and the outlet cavity 12, allowing the medium to flow in from the inlet cavity 11 and out from the outlet cavity 12. Furthermore, the cross-sectional dimensions of the inlet and outlet cavity are larger than the cross-sectional dimensions of the pipes 13 between them. Furthermore, the pipes 13 consist of two parts: a narrow flow channel and a wide flow channel, with the narrow flow channel being shorter and the wide flow channel being longer. The entire flow channel structure is located between two adjacent circuit layers, and between each set of pipes 13 are metallized vias 10 used for interconnecting adjacent circuit layers. Furthermore, to ensure the airtightness of the pipes 6 and the inlet and outlet of the circuit board 1, the pipes 6 are made of gold-plated Kovar alloy, and a third metal pad 14 is electroplated near the inlet and outlet, achieving high-strength soldering of the pipes 6 at the inlet and outlet through soldering.
[0023] The specific cooling method is as follows: First, a low-temperature, low-pressure liquid refrigerant with pressures and temperatures of p0 and T0 flows into the inlet cavity 11. When the medium reaches the inlet of the j-th pipe in the i-th group and passes through the narrow flow channel of pipe 13, its pressure and temperature are pij and Tij, respectively. A jet is formed near the outlet of the narrow flow channel (i.e., the inlet of the wide flow channel). Due to the extremely high flow resistance of the narrow flow channel, the pressure drops rapidly to pi′j′, while the temperature rises to Ti′j′ under the influence of the power consumption device, and the liquid phase flow is transformed into a gas-liquid two-phase flow. In the wide flow channel, along the flow direction, the heat of the SiPM array 2 and the ASIC chip 3 is continuously absorbed by the liquid phase medium and cooled down. At the same time, the liquid phase medium components gradually decrease due to heat absorption, and the proportion of the gas phase medium continuously increases. The gas-liquid two-phase or gas phase medium located at the outlet of pipe 13 reaches the outlet along the outlet cavity 12. At this time, the pressure and temperature at the outlet are p1 and T1, respectively.
[0024] To maintain the refrigerant's continued heat absorption within the pipes, the microchannel outlet connector 6 of circuit board 1 is connected sequentially to a low-cost mini compressor 15, a condenser 16, and a slender pipe 17 via metal pipes. The slender pipe 17 is connected to the microchannel inlet connector 6 of circuit board 1, forming a complete reverse Carnot cycle. During this cycle, the microchannel structure within circuit board 1 resembles an evaporator. The specific cycle process is as follows: Refrigerant with pressures and temperatures of p1 and T1 becomes a gaseous medium with extremely high pressures and temperatures under the action of the compressor, at which point the pressures and temperatures are p2 and T2, respectively. After being cooled by the condenser, it forms a liquid medium, at which point the pressure slightly decreases to p3, and the temperature rapidly drops to T3. After passing through the slender pipe, the pressure rapidly decreases to p0, and the temperature slightly increases to T0, thus supplying the microchannel inlet within the circuit board.
[0025] To ensure efficient heat dissipation of the SiPM array 2 at different locations, the pressure difference between the inlet of the circuit board 1 and the inlet of the pipe 13 furthest from that inlet should be much smaller than the pressure difference between the circuit board 1 and the inlet of the pipe 13 closest to that inlet. Furthermore, the high-power ASIC chip 3 should be positioned as close as possible to the middle of each group of pipes 13. This ensures efficient heat absorption by the high-power ASIC chip 3 and keeps the inlet cavity 11 as far away from heat sources as possible. This prevents the liquid medium from absorbing too much heat prematurely and converting into a gaseous medium. Consequently, pipes 13 closer to the outlet would not be able to achieve liquid-to-gas conversion, failing to effectively dissipate heat from the nearby SiPM and ASIC chip 3, resulting in higher temperatures and ultimately worse thermal uniformity of the entire SiPM detector array module.
[0026] The SiPM detector array module can be spliced together in the width direction to form a larger detector array, but if it is spliced together in the length direction, there will be a certain area of detection dead zone.
[0027] In summary, this SiPM detector array module achieves large-area splicing of SiPM arrays while ensuring virtually no dead zones in the lateral direction. Furthermore, the extremely compact SiPM detector array module effectively reduces the signal transmission distance between SiPM array 2 and ASIC chip 3, while also achieving good heat dissipation for both SiPM array 2 and ASIC chip 3. This improves the detector's detection performance and reliability, and reduces the overall size and weight of the device.
[0028] The effective effects of this utility model are:
[0029] 1. The large-area SiPM array, front-end electronics system and heat dissipation system are highly coupled into a single module, resulting in a compact overall structure that effectively reduces the weight and size of the detector.
[0030] 2. By horizontally splicing each module, a larger SiPM detector array can be formed, and the dead zone between each module is extremely small;
[0031] 3. The internal flow channel structure of the circuit board can achieve uniform cooling of the entire detector module, which can not only improve the detection performance and service life of SiPM, but also effectively reduce the difference in detection performance of each SiPM caused by temperature differences.
[0032] 4. Circuit boards with embedded flow channels can realize circuit functions. In addition, they can be used with inexpensive R134a refrigerant, compressors, condensers, and slender pipes as evaporators in reverse Carnot cycles. This design can reduce the cost of using microchannels while improving the heat dissipation efficiency of SiPM arrays and front-end electronic systems. Attached Figure Description
[0033] Figure 1 This is a schematic diagram of a highly integrated SiPM detector array module.
[0034] Figure 2 This is a schematic diagram of a circuit board for a highly integrated SiPM detector array module.
[0035] Figure 3 This is a schematic diagram of the implementation scheme for the internal flow channel structure of the circuit board.
[0036] Figure 4 A schematic diagram illustrating the working principle of the implementation scheme for cyclic cooling of the SiPM detector array module.
[0037] In the diagram: 1-Circuit board, 2-SiPM array, 3-ASIC chip, 4-Supporting electronic components, 5-Connector, 6-Connector, 7-First metal pad, 8-Second metal pad, 9-Circuit structure, 10-Metallized via, 11-Inlet chamber, 12-Outlet chamber, 13-Pipe, 14-Third metal pad, 15-Compressor, 16-Condenser, 17-Slender pipe. Detailed Implementation
[0038] To make the objectives, technical solutions, and advantages of the embodiments of this utility model clearer, the technical solutions of the embodiments of this utility model will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this utility model. Based on the embodiments of this utility model, all other embodiments obtained by those skilled in the art without creative effort are within the protection scope of this utility model.
[0039] Figure 1 It is a highly integrated SiPM detector array module, characterized by being composed of a circuit board 1, a SiPM array 2, an ASIC chip 3, supporting electronic components 4, connectors 5, and connecting pipes 6.
[0040] Figure 2 This is a schematic diagram of the SiPM detector array module circuit board. The circuit board 1 is made of high thermal conductivity and insulating materials such as alumina ceramic, silicon nitride ceramic, aluminum nitride ceramic, and silicon carbide ceramic. The circuit board 1 has a cuboid structure, with a width 0.4 mm to 1 mm larger than the product of the side length and number of individual SiPMs. The specific width depends on the dimensional tolerances and the number of SiPMs. Its length is 20 mm to 50 mm larger than the product of the side length and number of individual SiPMs, and its thickness is between 0.5 mm and 4 mm. Pads or circuits are provided on both sides of the circuit board 1. The first metal pad 7 on one side is soldered to the pins of the SiPM array 2, forming a compactly arranged long strip-shaped large-area array on the circuit board. The second metal pad 8 on the other side is soldered to the pins of multiple high-performance ASIC chips 3, supporting electronic components 4, and connectors 5. The circuit board adopts a single-layer or multi-layer circuit structure 9, and the different layers of circuit structures 9 are interconnected through metallized vias 10. Through this circuit structure 9 and metallized vias 10, the signals from the SiPM array 2 can reach the front-end electronics system, composed of the high-performance ASIC chip 3 and supporting electronic components 4, with an extremely short transmission distance. Simultaneously, the connector 5 provides power to the SiPM array and the front-end electronics system via the circuit structure 9 and metallized vias 10, and enables signal interconnection with the back-end electronics. This design not only optimizes signal transmission efficiency but also reduces the risk of signal attenuation and electromagnetic interference.
[0041] Because the multiple high-performance ASIC chips 3 are very close to the SiPM array 2, and the ceramic circuit board has excellent thermal conductivity, the temperature of the SiPM array 2 will rise rapidly without efficient heat dissipation measures, causing a decrease in the detection performance and reliability of the SiPM array. To avoid interfering with the SiPM array 2's capture of optical signals and with the interconnection between the connector 5 and the back-end electronics system, a microchannel structure is embedded within the circuit board, and a circulating cooling medium is introduced into the microchannel to transfer the heat from the SiPM array 2 and the multiple ASIC chips 3 to the external environment. Due to the limited thickness of the circuit board 1, the microchannel cross-sectional size is small, and the circuit board is relatively long. When the liquid cooling medium flows through the microchannel, the flow resistance is extremely high, requiring a high-pressure microfluidic pump with a very small flow rate for medium circulation cooling, resulting in extremely high costs. To reduce flow resistance, in addition to structural optimization, the microchannel board also uses environmentally friendly, non-toxic, and non-flammable R134a refrigerant, which forms a circulating cooling medium inside the pipe to achieve cooling.
[0042] The cooling medium inlet and outlet pipes 6 are located at both ends along the length of the circuit board. The two pipes are respectively connected to two longitudinal cavities inside the ceramic plate, namely the inlet cavity 11 and the outlet cavity 12 (e.g., ...). Figure 3 As shown, the inlet chamber 11 and outlet chamber 12 are connected by multiple sets of pipes 13, allowing the medium to flow in from the inlet chamber 11 and out from the outlet chamber 12. Furthermore, the cross-sectional dimensions of the inlet and outlet chambers are larger than the cross-sectional dimensions of the pipes 13 between them. Furthermore, the pipes 13 consist of two parts: a narrow flow channel and a wide flow channel, where the narrow flow channel is shorter and the wide flow channel is longer. The entire flow channel structure is located between two adjacent circuit layers, and between each set of pipes 13 are metallized vias 10 for interconnecting adjacent circuit layers. Furthermore, to ensure the airtightness of the connector 6 and the inlet and outlet of the circuit board 1, the connector 6 is made of gold-plated Kovar alloy, and a third metal pad 14 is electroplated near the inlet and outlet, achieving high-strength soldering of the connector 6 at the inlet and outlet through soldering.
[0043] In order to achieve continuous cooling of the entire SiPM detector array module through the flow channel in the circuit board 1, the microchannel outlet pipe 6 of the circuit board 1 is connected in sequence to the low-cost mini compressor 15, condenser 16 and slender pipe 17 through metal pipes. The slender pipe 17 is connected to the microchannel inlet pipe 6 of the circuit board 1, forming a complete reverse Carnot cycle loop. Figure 4 The diagram illustrates the principle of the reverse Carnot cycle. The pressure and temperature at the microchannel outlet pipe 6 on circuit board 1 are assumed to be p1 and T1, respectively (location 1 in the diagram). Under the action of the compressor, the gas pressure and temperature increase, leading to an increase in specific enthalpy. At the compressor outlet, as shown... Figure 2 At its location, with pressure and temperature p2 and T2 respectively, the compressor performs the following functions: Figure 4 The process is shown in line 1-2; the liquid at the compressor outlet is cooled into a liquid medium by the condenser. At this time, the pressure drops slightly to p3, and the temperature drops rapidly to T3, as shown in line 1-2. Figure 4 As shown in curve 2-3, the specific enthalpy decreases rapidly at this point. As the liquid medium passes through the slender pipe 17, the pressure drops rapidly to p0, while the temperature rises slightly to T0, approximating an isothermal depressurization process. Figure 4 In the 3-0 process, when the pressure drops to a certain range, the cooling medium is supplied to the microchannel inlet pipe 6 inside the circuit board 1. The liquid entering the circuit board 1 absorbs the heat from the chip, thus cooling the SiPM array 2 and the ASIC chip 3. The cooling liquid medium, due to heat absorption, becomes a hot gaseous medium, reaching the compressor inlet at pressures and temperatures p1 and T1 respectively. Figure 4 The 0-1 process shown in the diagram, in which circuit board 1 is equivalent to the evaporator of the reverse Carnot cycle.
[0044] The specific cooling method for the device within the circuit board is as follows: First, a low-temperature, low-pressure liquid refrigerant with pressures and temperatures of p0 and T0 enters the inlet chamber 11 through the inlet. When the medium reaches the inlet of the j-th pipe in the i-th group and passes through the narrow flow channel of pipe 13, its pressure and temperature are pij and Tij, respectively, and a jet is formed near the outlet of the narrow flow channel (i.e., the inlet of the wide flow channel). Due to the extremely high flow resistance of the narrow flow channel, the pressure rapidly drops to pi′j′, while the temperature rises to Ti′j′ under the influence of the power consumption device, and the liquid phase flow is transformed into a gas-liquid two-phase flow. In the wide flow channel, along the flow direction, the heat of the SiPM array 2 and the ASIC chip 3 is continuously absorbed by the liquid phase medium and cooled down. At the same time, the liquid phase medium components gradually decrease due to heat absorption, and the proportion of the gas phase medium continuously increases. The gas-liquid two-phase or gas phase medium located at the outlet of pipe 13 reaches the outlet along the outlet chamber 12.
[0045] Furthermore, to ensure efficient heat dissipation of the SiPM array 2 at different locations, the pressure difference between the microchannel inlet of the circuit board 1 and the inlet of the pipe 13 furthest from that inlet should be much smaller than that between the microchannel inlet and the pipe 13 inlet closest to that inlet. In addition, the high-power ASIC chip 3 should be positioned as close as possible to the middle of each group of pipes 13. This ensures efficient heat absorption by the high-power ASIC chip 3 and keeps the inlet cavity 11 as far away from heat sources as possible to prevent the liquid medium from absorbing too much heat prematurely and converting into a gaseous medium. This would prevent the pipe 13 closer to the outlet from achieving liquid-to-gas conversion, thus hindering effective heat dissipation for the nearby SiPM and ASIC chip 3, resulting in higher temperatures and consequently, poorer thermal uniformity of the entire SiPM detector array module.
[0046] The SiPM detector array module can be spliced together in the width direction to form a larger detector array, but if it is spliced together in the length direction, there will be a certain area of detection dead zone.
[0047] In summary, this SiPM detector array module achieves large-area splicing of SiPM arrays while ensuring virtually no dead zones in the lateral direction. The SiPM detector array module is extremely compact, effectively reducing the signal transmission distance between the SiPM array 2 and the high-performance ASIC chip 3. Simultaneously, it achieves good heat dissipation for both the SiPM array 2 and the high-performance ASIC chip 3 at a lower cost, thereby improving the detector's detection performance and reliability, and reducing the overall size and weight of the device.
[0048] Although specific embodiments of the present invention have been disclosed for illustrative purposes to aid in understanding and implementing the invention, those skilled in the art will understand that various substitutions, variations, and modifications are possible without departing from the spirit and scope of the invention and the appended claims. Therefore, the invention should not be limited to the content disclosed in the preferred embodiments, and the scope of protection claimed by the invention is defined by the claims.
Claims
1. A highly integrated SiPM detector array module, characterized in that, It includes a circuit board (1), a SiPM array (2), an ASIC chip (3), supporting electronic components (4), connectors (5), and a connecting pipe (6); the ASIC chip (3) and the supporting electronic components (4) constitute a front-end electronics system; The upper surface of the circuit board (1) is provided with a plurality of first metal pads (7) for connecting the SiPM array (2); the lower surface of the circuit board (1) is provided with a plurality of second metal pads (8) for connecting the ASIC chip (3), supporting electronic components (4) and connectors (5); the circuit board (1) includes several layers of circuit structure (9), and the circuit structures (9) of different layers are interconnected through metallized vias (10); The connector (5) supplies power to the SiPM array (2) and the front-end electronics system through the circuit structure (9) and the metallized via (10), and interconnects with the back-end electronics system; The circuit board (1) is embedded with microchannels. The inlet and outlet of the microchannels are respectively connected to a connecting pipe (6) for inputting and outputting circulating cooling medium to transfer the heat of the SiPM array (2) and the ASIC chip (3) to the external environment.
2. The highly integrated SiPM detector array module according to claim 1, characterized in that, The connector (6) connected to the microchannel outlet of the circuit board (1) is connected to the compressor (15), condenser (16) and slender pipe (17) in sequence through a metal pipe. The slender pipe (17) is connected to the connector (6) connected to the microchannel inlet of the circuit board (1), forming a complete reverse Carnot cycle loop.
3. The highly integrated SiPM detector array module according to claim 2, characterized in that, The microchannel includes multiple sets of channels (13), each set of channels (13) includes a narrow channel and a wide channel, wherein the length of the narrow channel is less than the length of the wide channel.
4. The highly integrated SiPM detector array module according to claim 3, characterized in that, A set of pipes (13) is provided between the two adjacent circuit structures (9).
5. The highly integrated SiPM detector array module according to claim 3, characterized in that, The metallized via (10) is provided between two adjacent sets of pipes (13).
6. The highly integrated SiPM detector array module according to claim 3, characterized in that, The ASIC chip (3) is arranged in the middle region of each group of channels (13) of the microchannel.
7. The highly integrated SiPM detector array module according to claim 1, characterized in that, The connector (6) is made of gold-plated Kovar alloy, and a third metal pad (14) is provided at the inlet and outlet of the microchannel for welding to the connector (6).
8. The highly integrated SiPM detector array module according to claim 1, characterized in that, The circuit board (1) is made of alumina ceramic, silicon nitride ceramic, aluminum nitride ceramic or silicon carbide ceramic.
9. The highly integrated SiPM detector array module according to claim 1, characterized in that, The circuit board (1) has a cuboid structure, and the inlet and outlet of the microchannel are located at both ends of the length direction of the circuit board (1).