A slit valve and semiconductor manufacturing apparatus

Abstract

This application provides a slit valve and a semiconductor manufacturing apparatus. The slit valve includes: a slit valve body having a slit channel; at least one plasma generating unit disposed on the inner wall of the slit channel; the plasma generating unit is used to ionize gas in the slit channel to form plasma, thereby removing dust deposited on the inner wall of the slit channel. Compared to the prior art, using the slit valve of this application to connect two chambers of a semiconductor manufacturing apparatus allows for plasma generation by the plasma generating unit without opening the chambers. The plasma then removes dust deposited on the inner wall of the slit valve, thereby inhibiting dust deposition within the slit valve, extending the cycle of opening the chambers for dust cleaning, and reducing downtime losses of the semiconductor manufacturing apparatus.

Description

Technical Field

[0001] This application relates to the field of semiconductor manufacturing technology, specifically to a slit valve and semiconductor manufacturing equipment. Background Technology

[0002] In semiconductor manufacturing, the slit valve is a key component of the transfer module. Its function is to isolate and transfer wafers between vacuum chambers while maintaining the system vacuum environment.

[0003] Powder generated during the process (such as byproducts of metal / dielectric thin film deposition, plasma reaction residues, etc.) deposits inside the slit valve, causing the powder to clog the vacuum pump port or airflow channel, reducing pumping performance, making it difficult to maintain vacuum, and affecting process stability; the deposited powder falling off will directly contaminate the wafer, resulting in a decrease in chip yield.

[0004] The traditional maintenance method for slit valves is to open the chamber for preventive maintenance and cleaning. After cleaning, a long vacuum recovery period is required, and particles may remain, which can introduce secondary particulate contamination and increase downtime losses. Frequent chamber opening for maintenance significantly increases production costs. Utility Model Content

[0005] The purpose of this application is to provide a slit valve and semiconductor manufacturing equipment that can minimize dust contamination within the slit valve and reduce downtime losses in semiconductor manufacturing equipment.

[0006] The first aspect of this application provides a slit valve, comprising:

[0007] The slit valve body has a slit passage;

[0008] At least one plasma generating unit is disposed on the inner wall of the slit channel;

[0009] The plasma generating unit is used to ionize the gas in the slit channel to form plasma, thereby removing the dust deposited on the inner wall of the slit channel.

[0010] In one possible implementation, the plasma generating unit has a plasma channel for plasma flow, the opening of which is on the inner wall of the slit channel.

[0011] In one possible implementation, the plasma channel has a circular, square, pentagonal, or hexagonal cross-sectional shape.

[0012] In one possible implementation, the plasma generating unit further includes: a first electrode and a second electrode, and the plasma channel is disposed between the first electrode and the second electrode;

[0013] The first electrode is connected to an alternating voltage, and the second electrode is grounded. An alternating electric field is established between the two electrodes to excite the gas in the plasma channel to ionize and form plasma.

[0014] In one possible implementation, the AC voltage ranges from 10 to 120V.

[0015] In one possible implementation, both the first electrode and the second electrode are aluminum electrodes.

[0016] In one possible implementation, the surfaces of the first and second electrodes have a coating to prevent plasma corrosion.

[0017] A second aspect of this application provides a semiconductor manufacturing apparatus, comprising: a first chamber, a second chamber, and a first slit valve;

[0018] The first slit valve is disposed between the first chamber and the second chamber, and the first slit valve is the slit valve described in the first aspect.

[0019] In one possible implementation, the semiconductor manufacturing equipment also includes:

[0020] The second slit valve and the third chamber;

[0021] The second slit valve is disposed between the second chamber and the third chamber, and the second slit valve is the slit valve described in the first aspect.

[0022] In one possible implementation, the first chamber is a load-locking chamber, the second chamber is a transmission chamber, and the third chamber is a process chamber.

[0023] The advantages of this application compared to existing technologies are:

[0024] The slit valve provided in this application includes: a slit valve body having a slit channel; at least one plasma generating unit disposed on the inner wall of the slit channel; the plasma generating unit is used to ionize the gas in the slit channel to form plasma, thereby removing dust deposited on the inner wall of the slit channel. Compared with the prior art, using the slit valve of this application to connect two chambers of a semiconductor manufacturing equipment allows plasma to be generated by the plasma generating unit without opening the chambers, and the plasma removes dust deposited on the inner wall of the slit valve, thereby inhibiting dust deposition in the slit valve, extending the cycle of opening the chambers for dust cleaning, and reducing downtime losses of the semiconductor manufacturing equipment. Attached Figure Description

[0025] Various other advantages and benefits will become apparent to those skilled in the art upon reading the following detailed description of preferred embodiments. The accompanying drawings are for illustrative purposes only and are not intended to limit the scope of this application. Furthermore, the same reference numerals denote the same parts throughout the drawings. In the drawings:

[0026] Figure 1 A schematic diagram of the structure of an existing semiconductor manufacturing equipment is shown;

[0027] Figure 2 A schematic diagram of the structure of a slit valve provided in this application is shown;

[0028] Figure 3 A schematic diagram of the structure of a plasma generating unit provided in this application is shown.

[0029] Figure label:

[0030] Load locking chamber 10, transmission chamber 20, process chamber 30, slit valve 40;

[0031] The components include a slit valve body 401, a plasma generating unit 402, a first electrode 4021, a second electrode 4022, and a plasma channel 4023. Detailed Implementation

[0032] In the following detailed description, reference is made to the accompanying drawings that form part of the description. In the drawings, similar symbols generally identify similar components unless the context otherwise indicates. Furthermore, unless otherwise stated, the description of each successive drawing may refer to features from one or more of the preceding drawings to provide a clearer background and a more substantial explanation of the current exemplary embodiment. Moreover, the exemplary embodiments described in the "Detailed Description," the drawings, and the claims are not intended to be limiting. Other embodiments and changes may be utilized without departing from the spirit or scope of the objectives presented herein. It should be readily understood that the aspects of this disclosure generally described herein and illustrated in the drawings can be arranged, substituted, combined, separated, and designed in various different configurations, all of which are clearly within the scope of consideration herein.

[0033] For ease of description, spatial relative terms such as “below,” “under,” “down,” “above,” “on,” “above,” “on,” and the like are used herein to describe the relationship between one element or feature and another, as illustrated in the figures. In addition to the orientations depicted in the figures, spatial relative terms are intended to cover different orientations of the device during use or operation. The device may be oriented in other ways (rotated 90 degrees or otherwise) and thus the spatial relative descriptive terms used herein may also be interpreted.

[0034] As used herein, terms such as “first,” “second,” and “third” describe various elements, components, regions, layers, and / or sections, which should not be limited to these terms. These terms may be used only to distinguish elements, components, regions, layers, or sections from one another. Unless the context clearly indicates otherwise, the terms such as “first,” “second,” and “third” used herein do not imply a sequence or order.

[0035] As used herein, the terms “approximately,” “substantially,” “basically,” and “about” are used to describe and explain minor variations. When used in conjunction with an event or situation, the terms may refer to examples in which the event or situation occurred precisely or examples in which the event or situation occurred approximately.

[0036] This application provides a slit valve and a semiconductor manufacturing apparatus, which will be described below with reference to the accompanying drawings.

[0037] like Figure 1 The diagram shown is a structural schematic of an existing semiconductor manufacturing device.

[0038] like Figure 1 The image shows the wafer transport path within a semiconductor manufacturing device:

[0039] The wafer enters the load lock module 10 for pre-vacuuming, then passes through slit valve 40 into the transfer module 20 for vacuum transfer, and finally through another slit valve into the process module 30 for processes such as etching. Figure 1 As shown, the white powder generated during wafer transfer may deposit inside the slit valve, potentially clogging the vacuum pump port or airflow channel, reducing pumping performance, making it difficult to maintain vacuum, and affecting process stability. Deposited powder falling off can directly contaminate the wafer, leading to a decrease in chip yield.

[0040] The load-locking chamber 10 is an indispensable key device in semiconductor manufacturing, vacuum technology, materials science, and related high-precision industrial fields. Its core function is to enable the safe and efficient entry and exit of samples (such as wafers, substrates, and masks) or workpieces while maintaining the stability of the internal environment of the main process chamber (usually a high vacuum or special atmosphere environment).

[0041] In semiconductor vacuum processes (such as etching and deposition), the transfer chamber 20 undertakes the function of transferring wafers between various process chambers.

[0042] A slit valve is a key component in semiconductor equipment used to connect different vacuum zones, control wafer transport, and maintain the vacuum environment. The valve body is typically made of stainless steel because stainless steel has excellent corrosion resistance, can withstand the corrosive effects of various chemical gases during semiconductor manufacturing, and possesses high strength and rigidity to ensure stable operation in a vacuum environment. The valve body is generally rectangular or cylindrical in shape, with a narrow channel inside, the slit channel, for the wafer to pass through. O-rings are sealing elements installed at the contact points between the valve plate and the valve body, as well as at other interfaces where gas leakage may occur. They serve to seal against atmospheric entry into the vacuum chamber or gas leakage within the vacuum chamber, ensuring the system's vacuum level.

[0043] like Figure 2 As shown, this application provides a slit valve, including: a slit valve body 401 and at least one plasma generating unit 402.

[0044] The slit valve body 401 has a slit channel, and the control valve 403 opens or closes the slit channel. The plasma generating unit 402 is disposed on the inner wall of the slit channel. The plasma generating unit 402 is used to ionize the gas in the slit channel to form plasma, so as to remove the dust deposited on the inner wall of the slit channel.

[0045] In practical applications, the plasma generating unit 402 can be a microchip. A microchip capable of generating localized plasma is integrated into the slit valve structure, and in-situ powder removal is achieved by exciting the plasma with alternating current (AC). The number of plasma generating units 402 can be set according to actual needs, and this application does not limit this.

[0046] Plasma is an ionized gas composed of ions, electrons, and neutral particles. Its dust removal effect stems from the synergistic effect of physical bombardment and chemical etching. The physical mechanism of plasma is as follows: AC voltage ionizes the process gas (such as Ar, O), generating high-energy ions and free radicals (such as O*, F*); ion bombardment causes the powder to physically detach, and the free radicals react chemically with the powder. Traditional plasma cleaning requires processing the entire cavity, while microchips generate localized plasma only on the surface of a slit valve, reducing energy consumption by 90%; the response speed is fast (from voltage application to plasma formation <1ms), allowing for simultaneous cleaning the instant the valve opens.

[0047] For example, the work sequence can be as follows:

[0048] Valve opening phase: 50ms before the slit valve opens, AC voltage is applied to form Ar / O plasma on the valve surface; the plasma continues to act for 200ms to remove the deposited powder;

[0049] Wafer transfer stage: Voltage off, plasma extinguished, valves allow normal wafer transfer;

[0050] After the valve is closed: apply voltage again for 100ms to remove any newly deposited powder that may have been deposited during the transfer process.

[0051] The slit valve integrated plasma microchip technology significantly improves the reliability and capacity of semiconductor manufacturing equipment through in-situ, real-time, and low-energy powder removal.

[0052] Figure 3 The diagram shown is a schematic diagram of the plasma generating unit provided in this application.

[0053] In some embodiments, such as Figure 3 As shown, the plasma generating unit 402 has a plasma channel 4023 for plasma flow, and the opening of the plasma channel is on the inner wall of the slit channel.

[0054] The plasma channel is a gas channel used to introduce purge gas. The purge gas can purge the slit channel during the opening and closing of the valve to remove particles and impurities in the slit channel and reduce particulate contamination.

[0055] In some embodiments, the plasma channel has a circular, square, pentagonal, or hexagonal cross-sectional shape.

[0056] In some embodiments, the plasma generating unit 402 further includes a first electrode 4021 and a second electrode 4022, and the plasma channel 4023 is disposed between the first electrode 4021 and the second electrode 4022.

[0057] The first electrode 4021 is connected to an AC voltage, and the second electrode 4022 is grounded. An alternating electric field is established between the two electrodes to excite the gas in the plasma channel 4023 to ionize and form plasma.

[0058] In some embodiments, the AC voltage ranges from 10 to 120V.

[0059] By integrating a plasma microchip inside the slit valve, a low voltage (AC 10-120V) is used to excite gas ionization and form local plasma to remove deposited powder, breaking through the limitation of traditional high voltage (>1kV).

[0060] In some embodiments, both the first and second electrodes of the plasma generating unit are aluminum (Al) electrodes. The use of aluminum electrodes in the plasma generating unit is based on aluminum's high conductivity, low cost, and process compatibility.

[0061] In some embodiments, the surfaces of the first and second electrodes have coatings to prevent plasma corrosion. In plasma cleaning scenarios for semiconductor devices (such as gas environments containing O and CF), Al electrodes are prone to oxidation and fluoride corrosion. To address the corrosion problem of Al electrodes, corrosion resistance can be improved through coatings, such as SiN. x Coatings, AlO coatings, etc.

[0062] The core function of the plasma generation unit 402 is to generate plasma by exciting gas ionization through an electric field in the slit valve, thereby realizing processes such as dust cleaning.

[0063] The ground terminal provides a potential reference (0V), forming an electric field with the AC voltage terminal to drive gas ionization. Al material electrodes are chosen due to their good conductivity and low cost, but require coatings (such as SiN). x Protects against plasma corrosion. An AC voltage of 10-120V is input to the AC terminal, establishing an alternating electric field between the Al electrodes, causing gas molecules to collide and ionize.

[0064] The slit valve provided in this application includes: a slit valve body having a slit channel; at least one plasma generating unit disposed on the inner wall of the slit channel; the plasma generating unit is used to ionize the gas in the slit channel to form plasma, thereby removing dust deposited on the inner wall of the slit channel. Compared with the prior art, using the slit valve of this application to connect two chambers of a semiconductor manufacturing equipment allows plasma to be generated by the plasma generating unit without opening the chambers, and the plasma removes dust deposited on the inner wall of the slit valve, thereby inhibiting dust deposition in the slit valve, extending the cycle of opening the chambers for dust cleaning, and reducing downtime losses of the semiconductor manufacturing equipment.

[0065] This application also provides a semiconductor manufacturing apparatus, including: a first chamber, a second chamber, and a first slit valve; the first slit valve is disposed between the first chamber and the second chamber, and the first slit valve is the slit valve 40 described in the above embodiments.

[0066] In some embodiments, the semiconductor manufacturing apparatus further includes a second slit valve and a third chamber; the second slit valve is disposed between the second chamber and the third chamber, and the second slit valve is the slit valve 40 described in the above embodiments.

[0067] Specifically, the first chamber is a load locking chamber, the second chamber is a transmission chamber, and the third chamber is a process chamber.

[0068] The semiconductor manufacturing equipment of this application uses the slit valve provided in this application to connect two chambers. Without opening the chambers, plasma can be generated by a plasma generating unit. The plasma removes the dust deposited on the inner wall of the slit valve, thereby inhibiting dust deposition in the slit valve, extending the cycle of opening the chambers for dust cleaning, and reducing downtime losses of the semiconductor manufacturing equipment.

[0069] It should be noted that:

[0070] Numerous specific details are set forth in the specification provided herein. However, it will be understood that embodiments of this application may be practiced without these specific details. In some instances, well-known methods, structures, and techniques have not been shown in detail so as not to obscure the understanding of this specification.

[0071] Similarly, it should be understood that, in order to simplify this application and aid in understanding one or more of the various utility model aspects, in the above description of exemplary embodiments of this application, various features of this application are sometimes grouped together in a single embodiment, figure, or description thereof. However, this disclosure method should not be construed as reflecting an intention that the claimed application requires more features than are expressly recited in each claim. Rather, as reflected in the following claims, the utility model aspect lies in fewer than all features of the single embodiment disclosed above. Therefore, the claims following the detailed description are hereby expressly incorporated into that detailed description, wherein each claim itself is a separate embodiment of this application.

[0072] Those skilled in the art will understand that modules in the device of the embodiments can be adaptively changed and placed in one or more devices different from that embodiment. Modules, units, or components in the embodiments can be combined into a single module, unit, or component, and further, they can be divided into multiple sub-modules, sub-units, or sub-components. Except where at least some of such features and / or processes or units are mutually exclusive, any combination can be used to combine all features disclosed in this specification (including the accompanying claims, abstract, and drawings) and all processes or units of any method or device so disclosed. Unless expressly stated otherwise, each feature disclosed in this specification (including the accompanying claims, abstract, and drawings) may be replaced by an alternative feature that serves the same, equivalent, or similar purpose.

[0073] Furthermore, those skilled in the art will understand that although some embodiments described herein include certain features but not others included in other embodiments, combinations of features from different embodiments are intended to be within the scope of this application and form different embodiments. For example, in the following claims, any of the claimed embodiments can be used in any combination.

[0074] It should be noted that the above embodiments are illustrative of this application and not restrictive, and that those skilled in the art can devise alternative embodiments without departing from the scope of the appended claims. In the claims, any reference signs placed between parentheses should not be construed as limiting the claims. The word "comprising" does not exclude the presence of elements or steps not listed in the claims. The word "a" or "an" preceding an element does not exclude the presence of a plurality of such elements. This application can be implemented by means of hardware comprising several different elements and by means of a suitably programmed computer. In the unit claims enumerating several means, several of these means may be embodied by the same item of hardware. The use of the words first, second, and third, etc., does not indicate any order. These words can be interpreted as names.

[0075] The above description is only a preferred embodiment of the present utility model and does not limit the patent scope of the present utility model. All equivalent structural transformations made under the concept of the present utility model and using the contents of the present utility model specification and drawings, or direct / indirect applications in other related technical fields, are included in the patent protection scope of the present utility model.

Claims

1. A slit valve, characterized in that, include: The slit valve body has a slit passage; At least one plasma generating unit is disposed on the inner wall of the slit channel; The plasma generating unit is used to ionize the gas in the slit channel to form plasma, thereby removing the dust deposited on the inner wall of the slit channel.

2. The slit valve according to claim 1, characterized in that, The plasma generating unit has a plasma channel for plasma flow, and the opening of the plasma channel is on the inner wall of the slit channel.

3. The slit valve according to claim 2, characterized in that, The plasma channel has a cross-sectional shape that is circular, square, pentagonal, or hexagonal.

4. The slit valve according to claim 2, characterized in that, The plasma generating unit further includes: a first electrode and a second electrode, and the plasma channel is disposed between the first electrode and the second electrode; The first electrode is connected to an alternating voltage, and the second electrode is grounded. An alternating electric field is established between the two electrodes to excite the gas in the plasma channel to ionize and form plasma.

5. The slit valve according to claim 4, characterized in that, The AC voltage ranges from 10 to 120V.

6. The slit valve according to claim 4, characterized in that, Both the first electrode and the second electrode are aluminum electrodes.

7. The slit valve according to claim 6, characterized in that, The surfaces of the first and second electrodes have a coating to prevent plasma corrosion.

8. A semiconductor manufacturing apparatus, characterized in that, include: The first chamber, the second chamber, and the first slit valve; The first slit valve is disposed between the first chamber and the second chamber, and the first slit valve is the slit valve according to any one of claims 1 to 7.

9. The semiconductor manufacturing equipment according to claim 8, characterized in that, Also includes: The second slit valve and the third chamber; The second slit valve is disposed between the second chamber and the third chamber, and the second slit valve is the slit valve according to any one of claims 1 to 7.

10. The semiconductor manufacturing equipment according to claim 9, characterized in that, The first chamber is a load locking chamber, the second chamber is a transmission chamber, and the third chamber is a process chamber.

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