Gas nodal device for a uniform flow chemical vapor deposition reactor

Abstract

This invention relates to the field of inlet and outlet gas in high-temperature CVD processes, and particularly to a gas node device for a uniform flow chemical vapor deposition reactor. The gas node device includes a suction pipe (1) connected to the interior of a basic annular groove (3), an annular cover (4) arranged on the basic annular groove (3), and multiple dispersion holes (401) arranged on the annular cover (4). This solves the problems of homogenizing fluid flow and reactor temperature distribution in the CVD reactor. This reduces the deposition of byproducts in the reactor exhaust pipe. The flow distribution along the reactor is uniform; the temperature distribution in the reactor is uniform, resulting in increased reactor life due to gas temperature; and the condensation of byproducts in the reactor is reduced.

Description

Technical Field

[0001] This utility model relates to the field of gas outlet in high-temperature CVD processes, and more particularly to a gas node device for a uniform flow chemical vapor deposition reactor. Background Technology

[0002] In a chemical vapor deposition reactor, the gas outlet exhaust pipe is a single pipe located at the bottom of the reactor.

[0003] Existing technology: The presence of only one inlet leads to uneven flow and temperature distribution across the reactor (due to gas temperature). During the coating process and heating and cooling, all thermal process gases pass through this inlet / outlet gas node. Therefore, the reactor (steel material) experiences more deformation at this outlet point. A major reason for reactor replacement is this deformation at this particular gas outlet point.

[0004] In other words, when a container has only one outlet, the flow of the medium inside the container is uneven, resulting in uneven flow and temperature distribution on the reactor, which can easily cause deformation. Uneven process temperature can also cause defects in the coating of the product.

[0005] On August 12, 2024, using "groove and hole and gas and CVD" as the abstract keywords and allowing synonym expansion, a search was conducted in the China Patent Publication Database, revealing 55 prior art documents, namely: CN106498367A - A compact vacuum reaction device for chemical vapor deposition of diamond thin films; CN100578736C - A method for epitaxial directional growth of nitride nanosheet meshes by etching substrate; CN102776489A - Inlet ring, inlet assembly, process chamber device and CVD equipment; CN102776489B - Inlet ring, inlet assembly, process chamber device and CVD equipment; CN212560430U - A reaction chamber turbine structure for CVD equipment; CN10977814 5B - A gas supply device and method for CVD equipment used in the production of solar cells; CN214233493U - Waste gas treatment device for the CVD synthesis of molybdenum disulfide process; CN217895744U - A CVD silicon carbide deposition treatment device; CN214862474U - CVD coating equipment; CN220703789U - A powder box for parylene pyrolysis CVD; CN111501019A - A turbine structure for a reaction chamber in CVD equipment; CN115838954A - A surface treatment process suitable for gas diffusers in CVD equipment; CN213203188U - A device for isolating carbon felt dust in CVD furnaces. Protective cover for particles; CN209685909U - A hot-filament CVD chemical vapor deposition nanodiamond coating apparatus; CN220265835U - A CVD chemical vapor deposition material rack; CN211829514U - An optical window structure for a CVD diamond laser; CN212293739U - An aluminum reactor for CVD coating equipment; CN103125013A - A system and method for selectively depositing tungsten in perforations; CN115838954B - A surface treatment process suitable for gas diffusers in CVD equipment; CN217103082U - A powder receiving cover for bubble CVD graphene powder production; CN102082 114A - Method for forming a double damask structure; CN118443187A - Silicon chip process method for a high-precision pressure sensor; CN202380151U - A spinning rotor; CN221440863U - Tooling for coating elongated graphite products; CN202558990U - A spinning rotor for a spinning machine; CN106498367B - A compact vacuum reaction apparatus for chemical vapor deposition of diamond thin films; CN103125013B - System and method for selectively depositing tungsten in perforations; CN101490817B - Method for manufacturing a semiconductor device, apparatus for manufacturing a semiconductor device, semiconductor device, and computer program;CN215439686U - A carbon nanotube inlet nozzle prepared by CVD method; CN220910475U - A high-sealing semiconductor CVD cavity sealing device; CN220619096U - A cylinder connector for CVD vacuum coating; CN202380152U - Spinner rotor assembly; CN102082114B - A method for forming a double damask structure; CN102011102A - Room temperature deposition equipment and method for high interfacial strength diamond-like carbon thin film materials; CN209968022U - A filter assembly and its CVD exhaust gas filtration equipment; CN1004 35308C - Improved semiconductor wafer structure and its manufacturing method; CN118201939A - Silanol and silanediol; CN101256950A - A method for epitaxial directional growth of nitride nanosheet meshes using an etched substrate method; CN115961265A - A large-area horizontal CAT-CVD coating chamber and equipment; CN109778145A - A gas supply device and its gas supply method for CVD equipment used in solar cell production; CN111996512A - An aluminum reactor for CVD coating equipment; CN201962349U - High interfacial strength diamond-like carbon thin film material Room temperature deposition equipment for materials; CN1992254A - Improved semiconductor wafer structure and manufacturing method thereof; CN220911990U - A ceramic nozzle sintering and forming apparatus for CVD; CN218241792U - Wafer transfer mechanism for CVD machine; CN117684155A - A gas flow distribution device for CVD; CN202039158U - A CVD graphite tray structure for semiconductor epitaxial wafer growth; CN118417599A - A CVD gas diffuser plate aperture expansion process; CN114040526A - A plate heater for CVD coating and its processing method. CN211764464U - A CVD diamond steel pen tip structure; CN101490817A - Manufacturing method of semiconductor device, manufacturing apparatus of semiconductor device, semiconductor device, computer program and storage medium; CN102011102B - Room temperature deposition equipment and method for high interface strength diamond-like carbon thin film materials; CN217298003U - Gas inlet structure of monolithic CVD epitaxial furnace and monolithic CVD epitaxial furnace; CN205764222U - A composite tool with CVD coated diamond; CN217922306U - A fixture for CVD coating of irregularly shaped, non-perforated CNC cutting tools.

[0006] Guiyang Aerospace Precision Casting Co., Ltd. disclosed CN117684155A a CVD airflow distribution device, including a reaction chamber, an air inlet device, a fixing device, and an air outlet device. The reaction chamber has an outer wall and an inner wall, and its structure is too complex, and it does not take into account the problem of uniform temperature change.

[0007] Tianjin Langmiao New Material Technology Co., Ltd. disclosed CN215439686U a method for preparing carbon nanotube air inlet nozzles by CVD. However, this method for preparing carbon nanotube air inlet nozzles by CVD does not take into account the problem of uniform temperature change.

[0008] Beijing Northern Microelectronics Base Equipment and Process Research Center Co., Ltd. disclosed CN102776489A an inlet ring, inlet assembly, process chamber device, and CVD equipment. The ring body is equipped with an outlet groove, a flow equalization groove, multiple air supply holes, and multiple inlet channels. The outlet groove is formed circumferentially on the outer surface of the ring body. The flow equalization groove is formed circumferentially on the lower surface of the ring body and communicates with the outlet groove. The air supply holes penetrate the ring body along its thickness direction and are located radially inside the flow equalization groove. The inlet channels are formed radially on the lower surface of the ring body, and each inlet channel connects one air supply hole to the flow equalization groove. This technical structure is overly complex and does not address the issue of uniform temperature variation.

[0009] A search of abstracts on CNKI (China National Knowledge Infrastructure) using the keywords "groove and hole and gas and CVD" revealed the article "Simulation Study of Capacitively Coupled Discharge Plasma Enhanced Deposition of Silicon Oxide Thin Films" published by Song Liuqin, Jia Wenzhu, Dong Wan, Zhang Yifan, Dai Zhongling, et al. in the *Acta Physica Sinica*. This technology is unrelated to this patent.

[0010] A search was conducted on the US Patent and Trademark Office website using the phrase "groove with vacuum with flow with CVD" (https: / / ppubs.uspto.gov / pubwebapp / ). The search revealed: First, US 20240026566A1 Method And Device For Producing A SiC Solid Material, which is unrelated to this patent; Second, US20080191373 A1 Method Of Regenerating Molding Die For Use In Molding Porous Structure Body, which is also unrelated to this patent.

[0011] A search was conducted on the Korean Patent Office website using the search term "groove and vacuum and flow and CVD and hole"; the search URL is engpat.kipris.or.kr; the following were found: [1] Semiconductor wafer processing method and apparatus with heat and airflow control 1019940704608; [2] Method and apparatus for depositing atomic layers on a substrate 1020157024424; [3] Method and apparatus for rapidly cooling a substrate 1020167031537; [4] Substrate holder, photolithography apparatus, apparatus manufacturing method and method for manufacturing a substrate holder 1020120016588; [5] Method for forming metal interconnects in a semiconductor device and contact structures thereby manufactured 1020000002700; [6] Building materials and methods using packaging materials, coffee, waste, by-products and waste materials 1020230004854; [7] Flow deposition system and apparatus in semiconductor manufacturing 1020110138180; [8] Modular microreactor structure and method for fluid processing device 1020037017276; [9] Thin film large area multilayer atomic layer chemical vapor phase treatment device and method 1020087024290;

[10] Robot, material, object, equipment, product, facility, structure, measure, system 1020240023856;

[11] Robot, material, object, equipment, product, facility, structure, measure, system 1020240023858;

[12] Movable injector in rotating disc gas reactor 1020107002565;

[13] High brightness high output lamp 1020027000222. The above technologies do not take into account the problem of solving the uniform temperature change.

[0012] A search for "groove and vacuum and flow and CVD and hole" on WIPO's https: / / patentscope2.wipo.int / yielded no relevant literature.

[0013] A search for "groove and vacuum and flow and CVD and hole" on the website of the Japan Patent Office (https: / / www.j-platpat.inpit.go.jp / ) yielded no relevant literature.

[0014] It is completely different from the concept of this patent. Utility Model Content

[0015] The purpose of this utility model is to provide a gas node device for a uniform flow chemical vapor deposition reactor with better performance. The specific purpose is explained in the several substantial technical effects in the specific implementation section.

[0016] To achieve the above objectives, the present invention adopts the following technical solution: To achieve the above objectives, the present invention adopts the following technical solution: The gas node device of the uniform flow chemical vapor deposition reactor includes a suction pipe 1 connected to the interior of the basic annular groove 3. An annular cover plate 4 is provided above the basic annular groove 3, and a plurality of dispersion holes 401 are opened on the annular cover plate 4.

[0017] A further technical solution of this utility model is that the exhaust node device is installed below the shell 7 of the chemical vapor deposition reactor.

[0018] A further technical solution of this utility model is that a bearing platform 6 is provided in the middle of the basic annular groove 3.

[0019] A further technical solution of this utility model is that: a plurality of dispersion holes 401 are evenly distributed on the annular cover plate 4.

[0020] A further technical solution of this utility model is that the diameter of the dispersion hole 401 increases along the distal end of the suction tube 1.

[0021] A further technical solution of this utility model is that the basic annular groove 3 and the annular cover plate 4 are detachably connected; or, the basic annular groove 3 and the two are integrated into the annular cover plate 4.

[0022] A further technical solution of this utility model is that the exhaust node device is specifically designed to treat the waste gas from the outlet of the chemical vapor deposition reactor.

[0023] A further technical solution of this utility model is that the basic annular groove 3 is directly connected to the suction tube 1 or connected to the suction tube 1 through the adapter 2.

[0024] A further technical solution of this utility model is as follows: an adapter upper step opening 23 is arranged above the adapter body, and the adapter upper step opening 23 fits into the bottom hole 5 of the basic annular groove 3 to achieve airtightness; an adapter lower step opening is arranged below the adapter body, and the adapter lower step opening fits into the upper step opening 12 of the suction pipe to achieve airtightness.

[0025] The present invention, employing the above technical solution, has the following advantages over the prior art: it solves the problems of homogenizing fluid flow and reactor temperature distribution in CVD reactors. Furthermore, it reduces the deposition of byproducts into the reactor exhaust line. The flow distribution along the reactor is uniform; the temperature distribution within the reactor is uniform, increasing reactor lifespan due to gas temperature variations; and the condensation of byproducts in the reactor is reduced. Attached Figure Description

[0026] To further illustrate this utility model, the following description is provided in conjunction with the accompanying drawings: Figure 1 A perspective view of the utility model; Figure 2 Partial structural diagram of the utility model; Figure 3 An overall structural diagram of the utility model; Figure 4 This is a structural diagram of a partial connection of the utility model; The components are: 1. Suction pipe; 2. Adapter; 3. Basic annular groove; 4. Annular cover; 301. Buffer dispersion groove; 401. Dispersion hole; 5. Bottom hole of basic annular groove; 6. Support platform; 7. Chemical vapor deposition reactor; 12. Upper step opening of suction pipe; 23. Upper step opening of adapter; 34. Upper step opening of basic annular groove. Detailed Implementation

[0027] The present invention will be further explained below with reference to the accompanying drawings and specific embodiments. It should be understood that the following specific embodiments are only for illustrating the present invention and are not intended to limit the scope of the present invention. In the description of the present invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," "outer," "top," and "bottom," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the present invention. In addition, unless otherwise expressly specified and limited, the terms "installation," "connection," and "joining" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal connection of two components. For those skilled in the art, the specific meaning of the above terms in the present invention can be understood according to the specific circumstances.

[0028] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus.

[0029] This patent provides multiple parallel solutions; the different descriptions represent improved or parallel solutions based on a basic solution. Each solution has its own unique characteristics. Furthermore, the technical features involved in the different embodiments of this utility model described below can be combined with each other as long as they do not conflict with each other. Fixing methods not described herein can be any type of fixing, such as threaded fixing, bolt fixing, or adhesive bonding.

[0030] Example 1: Referring to all the accompanying drawings; a gas node device for a uniform flow chemical vapor deposition reactor, characterized in that the gas node device includes a suction pipe 1, which connects to the interior of a basic annular groove 3. An annular cover 4 is arranged on the basic annular groove 3, and multiple dispersion holes 401 are arranged on the annular cover 4. The substantial technical effect and implementation process of this technical solution, i.e., its basic function, are as follows: Compared to existing technologies with basic designs featuring DN50 and DN100 exhaust pipes, this patent utilizes a basic annular groove 3 and multiple dispersion holes 401 to achieve a more uniform airflow distribution during the airflow process. The gas outlet point and pipe are replaced by a specifically designed gas node device; this gas node device is installed in the reactor above the isolation layer to maintain a temperature above 400 ℃, preventing temperature unevenness caused by condensation during the exhaust process. Simulation results show that if the flow at the gas outlet is homogenized, the reactor deformation will be significantly reduced.

[0031] This embodiment is a higher-level embodiment, while the second embodiment below is a preferred embodiment, mainly featuring a detachable design. The higher-level embodiment also includes a comprehensive design that does not require disassembly, in which the adapter 2 is not an essential component.

[0032] It solves the problems of homogenizing fluid flow and reactor temperature distribution in CVD reactors. Furthermore, it reduces the deposition of byproducts into the reactor. The flow distribution along the reactor is uniform; the temperature distribution within the reactor is uniform, resulting in increased reactor life due to higher gas temperatures; and the condensation of byproducts within the reactor is reduced.

[0033] Example 2: As a further improvement, parallel, or optional independent solution, an adapter 2 can be placed above the suction tube 1. The suction tube 1 and the adapter 2 are connected by a stepped opening 12 on the suction tube. The adapter 2 and the bottom hole 5 of the base annular groove 3 are pressed together by the stepped opening 23 on the adapter. The base annular groove 3 and the annular cover 4 are pressed together by the stepped opening 34 on the base annular groove. The substantial technical effect and implementation process of this technical solution, i.e., its basic function, are as follows: the cover is removable, so the inside is easy to clean.

[0034] Example 3: As a further improvement, parallel, or optional independent solution, the gas node device is installed below the shell of the chemical vapor deposition reactor 7. The substantive technical effects and implementation process of this technical solution, i.e., its basic functions, are as follows: This example provides a specific installation location.

[0035] Example 4: As a further improvement, parallel, or optional independent solution, a support platform 6 is arranged in the middle of the foundation annular groove 3. The substantive technical effect and implementation process of this technical solution, i.e., its basic function, are as follows: to place items for coating.

[0036] Example 5: As a further improvement, parallel, or optional independent solution, multiple dispersion holes 401 are evenly distributed on the annular cover 4. The substantial technical effect and implementation process of this technical solution, i.e., its basic function, are as follows: It can thus achieve even airflow distribution, avoiding uneven temperature changes.

[0037] Example 6: As a further improvement, parallel, or optional independent solution, the diameter of the dispersion hole 401 increases gradually along the distal end of the suction tube 1. The substantive technical effect and implementation process of this technical solution, i.e., its basic function, are as follows: Referring to the accompanying drawings, one preferred method is to ensure that the gas flow is as uniform as possible throughout the process.

[0038] Example 7: As a further improvement, parallel, or optional independent solution, the basic annular groove 3 and the annular cover plate 4 are detachably connected; or, the basic annular groove 3 and the annular cover plate 4 are integrated into one unit. The substantive technical effect and implementation process of the technical solution here, i.e., the basic function, are as follows: whether it is an integrated design or a separate design, it is within the scope of protection of this patent. That is, this patent explicitly states that another possible solution is that the annular channel 3 and the annular cover plate 4 are an integrated structure (not openable), and this overall structure can be rectangular, circular, or other arbitrary shapes, and has multiple dispersion holes 401 on its top. This still ensures uniform airflow. The figure shows a detachable connection, but it does not represent a non-detachable connection method, which is not within the scope of protection of this patent.

[0039] Example 8: As a further improvement, parallel solution, or optional independent solution, the exhaust node device is specifically designed to treat waste gas from the outlet of the chemical vapor deposition reactor. The substantive technical effect and implementation process of the technical solution described herein, i.e., its basic function, are as follows: This patent can be used in similar applications of airflow homogenization.

[0040] Example 9: As a further improvement, parallel, or optional independent solution, the basic annular groove 3 is directly connected to the suction pipe 1 or connected to the suction pipe 1 via the adapter 2. The substantial technical effects and implementation process of this technical solution, i.e., its basic functions, are as follows: it reduces the number of components, provides direct connection, eliminates the need for installation, and improves airtightness.

[0041] Example 10: As a further improvement, parallel, or optional independent solution, an adapter upper step opening 23 is arranged on the upper part of the adapter 2 body, which fits into the bottom hole 5 of the basic annular groove 3 to achieve airtightness; a lower step opening is arranged on the lower part of the adapter 2 body, which fits into the upper step opening 12 of the suction pipe to achieve airtightness. The substantial technical effect and implementation process of this technical solution, i.e., its basic function, are as follows: convenient disassembly and convenient cleaning of by-products.

[0042] In traditional chemical vapor deposition (CVD) processes, the vacuum outside the fixture is entirely supplied and discharged through a single pipe, leading to gas inhomogeneity. This technology has little to no impact on the CVD coating process because the annular distribution homogenizes the flow. This product is used in CVD reactors to homogenize the flow during the process.

[0043] The basic annular trough 3 does not necessarily need to be symmetrical (optional configuration) so that other CVD reactor components can be installed smoothly.

[0044] Innovatively, each of the above effects exists independently, yet a single structure can be used to combine the results.

[0045] It should be noted that the multiple solutions provided in this patent include their own basic solutions, which are independent of each other and do not restrict each other. However, they can also be combined with each other without conflict to achieve multiple effects.

[0046] The foregoing has shown and described the basic principles, main features, and advantages of this utility model. Those skilled in the art should understand that this utility model is not limited to the above embodiments. The embodiments and descriptions in the specification are merely illustrative of the principles of this utility model. Various changes and modifications can be made to this utility model without departing from its spirit and scope, and all such changes and modifications fall within the scope of the claims.

Claims

1. A gas node device for a uniform flow chemical vapor deposition reactor, characterized in that, Its exhaust node device includes a suction pipe (1), which is connected to the interior of the basic annular groove (3). An annular cover plate (4) is provided above the basic annular groove (3), and a plurality of dispersion holes (401) are opened on the annular cover plate (4).

2. The gas node device for a uniform flow chemical vapor deposition reactor as described in claim 1, characterized in that, The exhaust node device is installed below the shell (7) of the chemical vapor deposition reactor.

3. The gas node device for a uniform flow chemical vapor deposition reactor as described in claim 1, characterized in that, A bearing platform (6) is provided in the middle of the basic annular groove (3).

4. The gas node device for a uniform flow chemical vapor deposition reactor as described in claim 1, characterized in that, The annular cover plate (4) has multiple dispersion holes (401) evenly distributed on it.

5. The gas node device for a uniform flow chemical vapor deposition reactor as described in claim 1, characterized in that, The diameter of the dispersion hole (401) increases along the distal end of the suction tube (1).

6. The gas node device for a uniform flow chemical vapor deposition reactor as described in claim 1, characterized in that, The basic annular groove (3) and the annular cover plate (4) are detachably connected; or the basic annular groove (3) and the two are integrated into the annular cover plate (4).

7. The gas node device for a uniform flow chemical vapor deposition reactor as described in claim 1, characterized in that, The exhaust node device is specifically designed to handle exhaust gas from the outlet of the chemical vapor deposition reactor.

8. The gas node device for a uniform flow chemical vapor deposition reactor as described in claim 1, characterized in that, The basic annular groove (3) is directly connected to the suction tube (1) or connected to the suction tube (1) through the adapter (2).

9. The gas node device for a uniform flow chemical vapor deposition reactor as described in claim 8, characterized in that, The adapter (2) has an upper step opening (23) above its body. The upper step opening (23) fits into the bottom hole (5) of the base annular groove (3) to achieve airtightness. The adapter (2) has a lower step opening below its body. The lower step opening fits into the upper step opening (12) of the suction pipe to achieve airtightness.

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