Inverter bridge arm and inverter module
By adopting an inverter bridge arm structure in the photovoltaic inverter, which includes two IGBT modules and one diode module, and combining them into an NPC-I topology, the problem of the limited number of IGBT chips is solved, the power density is improved and the cost is reduced.
Patent Information
- Application Number
- CN202520843763.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-04-29
- Publication Date
- 2026-08-25
- Estimated Expiration
- 2035-04-29
AI Technical Summary
Currently, the number of IGBT chips that can be integrated into a single package in mainstream photovoltaic inverters is limited, resulting in a low overall power density.
The inverter bridge arm structure includes two IGBT modules and one diode module, which are combined into an NPC-I topology through a specific connection method, reducing the number of IGBTs and increasing power density.
It increases the power density of the inverter, reduces costs, and simplifies the connection of the drive board, making assembly easier.
Smart Images

Figure CN224684125U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of photovoltaic inverter technology, and in particular to an inverter bridge arm and an inverter module. Background Technology
[0002] Currently, mainstream photovoltaic inverters generally adopt the ANPC three-level topology based on two-level IGBT half-bridge modules. The number of IGBT chips that can be integrated in a single package is limited, resulting in a low overall power density. Utility Model Content
[0003] The technical problem to be solved by this utility model is that the number of IGBT chips that can be integrated in a single package of the current mainstream photovoltaic inverters is limited, resulting in a low overall power density.
[0004] To solve the above-mentioned technical problems, the first aspect of this utility model discloses an inverter bridge arm, the inverter bridge arm comprising:
[0005] Two IGBT modules are provided, wherein each IGBT module includes a first IGBT transistor, a second IGBT transistor, a first diode, and a second diode. The collector of the first IGBT transistor is connected to the cathode of the first diode. The emitter of the first IGBT transistor is connected to the anode of the first diode, the cathode of the second diode, and the collector of the second IGBT transistor. The emitter of the second IGBT transistor is connected to the anode of the second diode. The emitter of the first IGBT transistor is used as the first pin of the IGBT module, the emitter of the second IGBT transistor is used as the second pin of the IGBT module, and the collector of the first IGBT transistor is used as the third pin of the IGBT module.
[0006] A diode module, wherein the diode module includes a third diode and a fourth diode, the anode of the third diode is connected to the cathode of the fourth diode, the cathode of the third diode is used as the cathode of the diode module, the anode of the fourth diode is used as the anode of the diode module, and the anode of the third diode and the cathode of the fourth diode are used as the common terminal of the diode module;
[0007] The first pin of the first IGBT module is connected to the cathode of the diode module, the first pin of the second IGBT module is connected to the anode of the diode module, the second pin of the first IGBT module is connected to the third pin of the second IGBT module, the common terminal of the diode module is used as the midpoint connection point of the DC bus of the inverter bridge arm, the third pin of the first IGBT module is used as the positive terminal connection point of the DC bus of the inverter bridge arm, the second pin of the first IGBT module and the third pin of the second IGBT module are used as the AC side connection points of the inverter bridge arm, and the second pin of the second IGBT module is used as the negative terminal connection point of the DC bus of the inverter bridge arm.
[0008] As an optional implementation, in the first aspect of this utility model, the first IGBT module and the second IGBT module are horizontally arranged above the diode module, with the first IGBT module located on the right and the second IGBT module located on the left, and the diode module is horizontally positioned.
[0009] As an optional implementation, in the first aspect of this utility model, the IGBT module and the diode module are 62mm modules.
[0010] As an optional implementation, in the first aspect of this invention, the pins of the IGBT module are connected using multi-layer copper busbars and multi-layer stacked busbars.
[0011] The second aspect of this utility model discloses an inverter module, including any of the inverter bridge arms mentioned above, wherein the number of inverter bridge arms is greater than 1 and they are arranged sequentially on a heat sink.
[0012] As an optional implementation, in the second aspect of this utility model, the output terminal of the inverter module is either a parallel output or an independent output.
[0013] As an optional implementation, in the second aspect of this utility model, the radiator is any one of an aluminum radiator, a two-phase flow radiator, or a liquid-cooled radiator.
[0014] Compared with the prior art, the embodiments of this utility model have the following beneficial effects:
[0015] In this embodiment of the invention, the inverter bridge arm includes two IGBT modules and one diode module. Each IGBT module includes a first IGBT and a second IGBT. The IGBTs and diodes are connected in a specific manner and can be combined to form an inverter bridge arm with an NPC-I topology. This reduces the number of IGBTs, lowers costs, and increases power density. Attached Figure Description
[0016] To more clearly illustrate the technical solutions in the embodiments of this utility model, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0017] Figure 1 This is an internal topology diagram of the IGBT module disclosed in this embodiment of the utility model;
[0018] Figure 2 This is a pinout diagram of the IGBT module disclosed in this embodiment of the utility model;
[0019] Figure 3 This is an internal topology diagram of the diode module disclosed in this embodiment of the present invention;
[0020] Figure 4 This is a pinout diagram of the diode module disclosed in this embodiment of the utility model;
[0021] Figure 5 This describes the layout and connection method of each module in the inverter bridge arm disclosed in this embodiment of the utility model;
[0022] Figure 6 This is an inverter module disclosed in an embodiment of the present utility model;
[0023] Figure 7 This is another inverter module disclosed in this utility model embodiment. Detailed Implementation
[0024] To enable those skilled in the art to better understand the present invention, the technical solutions of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.
[0025] The terms "first," "second," etc., in the specification, claims, and accompanying drawings of this utility model are used to distinguish different objects, not to describe a specific order. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion. For example, a process, method, apparatus, product, or end that includes a series of steps or units is not limited to the listed steps or units, but may optionally include steps or units not listed, or may optionally include other steps or units inherent to these processes, methods, products, or ends.
[0026] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of the present invention. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.
[0027] This utility model discloses an inverter bridge arm and an inverter module. The inverter bridge arm includes: two IGBT modules, wherein each IGBT module includes a first IGBT transistor T1, a second IGBT transistor T2, a first diode D1, and a second diode D2. The collector of the first IGBT transistor T1 is connected to the cathode of the first diode D1, the emitter of the first IGBT transistor T1 is connected to the anode of the first diode D1, the cathode of the second diode D2, and the collector of the second IGBT transistor T2, and the emitter of the second IGBT transistor T2 is connected to the anode of the second diode D2. The emitter of the first IGBT transistor T1 is used as the first pin of the IGBT module, the emitter of the second IGBT transistor T2 is used as the second pin of the IGBT module, and the collector of the first IGBT transistor T1 is used as the third pin of the IGBT module; and a diode module D3, wherein the diode module D3 includes a third diode and a fourth diode. The anode of the third diode is connected to the cathode of the fourth diode, and the cathode of the third diode is used as the diode. The cathode of diode module D3 uses the anode of the fourth diode as its anode, and the anode of the third diode and the cathode of the fourth diode as the common terminal of diode module D3. The first pin of the first IGBT module Q1 is connected to the cathode of diode module D3, the first pin of the second IGBT module Q2 is connected to the anode of diode module D3, and the second pin of the first IGBT module Q1 is connected to the third pin of the second IGBT module Q2. The common terminal of diode module D3 serves as the midpoint connection point of the DC bus of the inverter bridge arm, the third pin of the first IGBT module Q1 serves as the positive terminal connection point of the DC bus of the inverter bridge arm, the second pins of the first IGBT module Q1 and the third pin of the second IGBT module Q2 serve as the AC side connection points of the inverter bridge arm, and the second pin of the second IGBT module Q2 serves as the negative terminal connection point of the DC bus of the inverter bridge arm. This configuration can form an inverter bridge arm with an NPC-I topology, reducing the number of IGBTs, lowering costs, and increasing power density. Detailed explanations follow.
[0028] Example 1
[0029] Figure 1 This is an internal topology diagram of the IGBT module disclosed in this embodiment of the utility model;
[0030] Figure 2 This is a pinout diagram of the IGBT module disclosed in this embodiment of the utility model;
[0031] Figure 3 This is an internal topology diagram of the diode module disclosed in this embodiment of the present invention;
[0032] Figure 4 This is a pinout diagram of the diode module disclosed in this embodiment of the utility model;
[0033] Figure 5 This describes the layout and connection method of each module in the inverter bridge arm disclosed in this embodiment of the utility model.
[0034] like Figure 1 , Figure 2 , Figure 3 , Figure 4 , Figure 5 As shown, this utility model discloses an inverter bridge arm, which includes:
[0035] Two IGBT modules are provided, each of which includes a first IGBT transistor T1, a second IGBT transistor T2, a first diode D1, and a second diode D2. The collector of the first IGBT transistor T1 is connected to the cathode of the first diode D1, the emitter of the first IGBT transistor T1 is connected to the anode of the first diode D1, the cathode of the second diode D2, and the collector of the second IGBT transistor T2, and the emitter of the second IGBT transistor T2 is connected to the anode of the second diode D2. The emitter of the first IGBT transistor T1 is used as the first pin of the IGBT module, the emitter of the second IGBT transistor T2 is used as the second pin of the IGBT module, and the collector of the first IGBT transistor T1 is used as the third pin of the IGBT module.
[0036] A diode module D3, wherein the diode module D3 includes a third diode and a fourth diode, the anode of the third diode is connected to the cathode of the fourth diode, the cathode of the third diode is used as the cathode of the diode module D3, the anode of the fourth diode is used as the anode of the diode module D3, and the anode of the third diode and the cathode of the fourth diode are used as the common terminal of the diode module D3;
[0037] The first pin of the first IGBT module Q1 is connected to the cathode of the diode module D3, the first pin of the second IGBT module Q2 is connected to the anode of the diode module D3, the second pin of the first IGBT module Q1 is connected to the third pin of the second IGBT module Q2, the common terminal of the diode module D3 is used as the midpoint connection point of the DC bus of the inverter bridge arm, the third pin of the first IGBT module Q1 is used as the positive terminal connection point of the DC bus of the inverter bridge arm, the second pin of the first IGBT module Q1 and the third pin of the second IGBT module Q2 are used as the AC side connection points of the inverter bridge arm, and the second pin of the second IGBT module Q2 is used as the negative terminal connection point of the DC bus of the inverter bridge arm.
[0038] In one optional implementation, the first IGBT module Q1 and the second IGBT module Q2 are horizontally arranged above the diode module D3, with the first IGBT module Q1 located on the right and the second IGBT module Q2 located on the left, and the diode module D3 is horizontally positioned.
[0039] In one alternative implementation, the IGBT module and diode module are 62mm modules.
[0040] In one alternative implementation, the pins of the IGBT module are connected using multi-layer copper busbars and multi-layer stacked busbars.
[0041] Example 2
[0042] Figure 6 This is an inverter module disclosed in an embodiment of the present utility model.
[0043] like Figure 6 As shown, this utility model discloses an inverter module, including any of the above-mentioned inverter bridge arms, the number of inverter bridge arms is greater than 1, and they are arranged sequentially on the heat sink.
[0044] In an optional embodiment, the output of the inverter module is an independent output.
[0045] In an optional embodiment, the heat sink is any one of an aluminum heat sink, a two-phase flow heat sink, or a liquid-cooled heat sink.
[0046] Example 3
[0047] Figure 7 This is another inverter module disclosed in this utility model embodiment.
[0048] like Figure 7 As shown, this utility model discloses another inverter module, which differs from the inverter module in Embodiment 2 in that the output terminal of the inverter module is a parallel output.
[0049] As can be seen, the inverter bridge arm and inverter module disclosed in this utility model adopt a common emitter [Xiangwen 2] 62mm IGBT module, and the IGBTs inside the module are connected in parallel, which can obtain a larger current output capability and improve the power density of the inverter. Moreover, the IGBT module terminals are all on the same side or the outside, which facilitates the connection of the drive board. At the same time, the IGBT module density is higher, which can reduce the area of the bus copper bus, reduce costs, facilitate assembly, and can also be combined into an inverter bridge arm with an NPC-I topology, which can reduce the number of IGBT tubes and reduce costs.
[0050] Finally, it should be noted that the inverter bridge arm and inverter module disclosed in this utility model embodiment are merely preferred embodiments of this utility model, and are only used to illustrate the technical solutions of this utility model, not to limit it; although this utility model has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the various embodiments of this utility model.
Claims
1. An inverter arm, characterized in that, The inverter bridge arm includes: Two IGBT modules are provided, wherein each IGBT module includes a first IGBT transistor, a second IGBT transistor, a first diode, and a second diode. The collector of the first IGBT transistor is connected to the cathode of the first diode. The emitter of the first IGBT transistor is connected to the anode of the first diode, the cathode of the second diode, and the collector of the second IGBT transistor. The emitter of the second IGBT transistor is connected to the anode of the second diode. The emitter of the first IGBT transistor is used as the first pin of the IGBT module, the emitter of the second IGBT transistor is used as the second pin of the IGBT module, and the collector of the first IGBT transistor is used as the third pin of the IGBT module. A diode module, wherein the diode module includes a third diode and a fourth diode, the anode of the third diode is connected to the cathode of the fourth diode, the cathode of the third diode is used as the cathode of the diode module, the anode of the fourth diode is used as the anode of the diode module, and the anode of the third diode and the cathode of the fourth diode are used as the common terminal of the diode module; The first pin of the first IGBT module is connected to the cathode of the diode module, the first pin of the second IGBT module is connected to the anode of the diode module, the second pin of the first IGBT module is connected to the third pin of the second IGBT module, the common terminal of the diode module is used as the midpoint connection point of the DC bus of the inverter bridge arm, the third pin of the first IGBT module is used as the positive terminal connection point of the DC bus of the inverter bridge arm, the second pin of the first IGBT module and the third pin of the second IGBT module are used as the AC side connection points of the inverter bridge arm, and the second pin of the second IGBT module is used as the negative terminal connection point of the DC bus of the inverter bridge arm.
2. The inverter arm according to claim 1, characterized in that, The first IGBT module and the second IGBT module are arranged horizontally above the diode module, with the first IGBT module on the right and the second IGBT module on the left. The diode module is placed horizontally.
3. The inverter arm according to claim 1 or 2, characterized in that, The pins of the IGBT module are connected using multi-layer copper busbars and multi-layer stacked busbars.
4. An inverter module, characterized in that, It includes the inverter bridge arm as described in any one of claims 1-3, wherein the number of the inverter bridge arms is greater than 1 and they are arranged sequentially on the heat sink.
5. The inverter module according to claim 4, characterized in that, The output of the inverter module can be either parallel output or independent output.
6. The inverter module according to claim 4, characterized in that, The radiator is any one of aluminum radiator, two-phase flow radiator, or liquid-cooled radiator.