A solar cell, a cell assembly, and a photovoltaic system

Abstract

The application is suitable for the technical field of solar cells, and provides a solar cell, a battery assembly and a photovoltaic system. The solar cell comprises a silicon substrate including a doped layer, a passivation layer arranged on the silicon substrate and formed with a plurality of through holes, and a fine grid including a conductive structure and a connecting structure. The conductive structure is electrically connected to the doped layer through the through holes, and the connecting structure connects the conductive structures corresponding to two adjacent through holes. The through holes include a first hole, a second hole and a third hole arranged in sequence along a first direction. The conductive structure includes a first conductive part, a second conductive part and a third conductive part arranged correspondingly to the first hole, the second hole and the third hole. The connecting structure includes a first connecting part and a second connecting part. The first connecting part connects the first conductive part and the second conductive part, and the second connecting part connects the second conductive part and the third conductive part. The center line of the first connecting part is spaced from the center line of the second connecting part in a second direction, and the second direction intersects the first direction.

Description

Technical Field

[0001] This application belongs to the field of solar cell technology, and particularly relates to a solar cell, a battery module, and a photovoltaic system. Background Technology

[0002] Solar cell power generation is a sustainable and clean energy source that converts sunlight into electricity using the photovoltaic effect of semiconductor pn junctions. In related technologies, the wide grid width of the grid blocks light, resulting in lower photoelectric conversion efficiency of the solar cell.

[0003] Therefore, how to design fine gratings to improve photoelectric conversion efficiency has become an urgent problem to be solved. Utility Model Content

[0004] This application provides a solar cell, a cell module, and a photovoltaic system, aiming to solve the problem of how to design fine grids to improve photoelectric conversion efficiency.

[0005] The solar cell provided in this application includes: Silicon substrate, including doped layers; A passivation layer is disposed on the silicon substrate and has a plurality of through-holes; A fine gate includes a conductive structure and a connecting structure, wherein the conductive structure is electrically connected to the doped layer through the via, and the connecting structure connects the conductive structures corresponding to two adjacent vias. The through hole includes a first hole, a second hole, and a third hole arranged sequentially along a first direction; the conductive structure includes a first conductive part, a second conductive part, and a third conductive part corresponding to the first hole, the second hole, and the third hole; and the connection structure includes a first connection part and a second connection part, wherein the first connection part connects the first conductive part and the second conductive part, and the second connection part connects the second conductive part and the third conductive part. The centerline of the first connecting portion and the centerline of the second connecting portion are spaced apart in a second direction, and the second direction intersects the first direction.

[0006] Specifically, the distance between the center line of the first connecting part and the center line of the second connecting part in the second direction is greater than 0 and less than or equal to 500 μm.

[0007] Specifically, the through hole is a circular hole with a diameter of 1μm-30μm; or, the through hole is a rectangular hole with a long side length of 1μm-30μm; or, the through hole is an elliptical hole with a major axis length of 1μm-30μm.

[0008] Specifically, the solar cell satisfies the following formula: 0.5D < W; Wherein, W is the distance between the center line of the first connecting part and the center line of the second connecting part in the second direction, and D is the diameter of the second hole.

[0009] Specifically, the solar cell satisfies the following formula: D < X ≤ Y1 + Y2; Where D is the diameter of the second hole, X is the dimension of the second conductive part in the second direction, and Y1 and Y2 are the dimensions of the first connecting part and the second connecting part in the second direction, respectively.

[0010] Specifically, the conductive structure has a size of 1.5 μm-30.5 μm in the first direction.

[0011] Specifically, the dimensions of the connection structure in the first direction are 10μm-200μm.

[0012] Specifically, the dimension of the connection structure in the second direction is 10μm-100μm.

[0013] The battery assembly provided in this application includes any of the aforementioned solar cells.

[0014] The photovoltaic system provided in this application includes any of the aforementioned battery modules.

[0015] In the solar cells, battery modules, and photovoltaic systems of this application, since the center lines of the two connecting portions connected to the second conductive portion of the doped layer through the through-hole of the passivation layer are spaced apart in the second direction, the overlapping area of ​​the two connecting portions connected to the second conductive portion in the first direction is small. This can reduce the light-shielding area and material usage of the fine grid while ensuring connection to the doped layer, which is beneficial to improving photoelectric conversion efficiency and reducing costs. Attached Figure Description

[0016] Figure 1 This is a schematic diagram of the structure of a solar cell according to an embodiment of this application; Figure 2 This is a schematic diagram of the structure of a solar cell according to an embodiment of this application; Figure 3 This is a schematic diagram of the structure of a solar cell according to an embodiment of this application; Explanation of key component symbols: Solar cell 100, silicon substrate 111, doped layer 112, passivation layer 12, first hole 121, second hole 122, third hole 123, fine grid 13, first conductive part 1311, second conductive part 1312, third conductive part 1313, first connecting part 1321, second connecting part 1322. Detailed Implementation

[0017] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. Examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this application, and should not be construed as limiting this application. Furthermore, it should be understood that the specific embodiments described herein are merely for explaining this application and are not intended to limit this application.

[0018] In the description of this application, it should be understood that the terms "length", "width", "upper", "lower", "left", "right", "horizontal", "top", "bottom", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0019] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the stated features. In the description of this application, "a plurality of" means two or more, unless otherwise explicitly specified.

[0020] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection, an electrical connection, or a connection that allows communication between them; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication between two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this application according to the specific circumstances.

[0021] In this application, unless otherwise expressly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature being directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature being directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0022] The following disclosure provides numerous different embodiments or examples for implementing various structures of this application. To simplify the disclosure, specific examples of components and arrangements are described below. These are merely examples and are not intended to limit the scope of this application. Furthermore, reference numerals and / or letters may be repeated in different examples; such repetition is for simplification and clarity and does not in itself indicate a relationship between the various embodiments and / or arrangements discussed. In addition, various specific examples of processes and materials are provided in this application, but those skilled in the art will recognize the application of other processes and / or the use of other materials.

[0023] Please see Figure 1 , Figure 2 and Figure 3 The solar cell 100 of this application embodiment includes: A silicon substrate 111 includes a doped layer 112; Passivation layer 12 is disposed on silicon substrate 111 and has a plurality of vias; The fine gate 13 includes a conductive structure and a connection structure. The conductive structure passes through the via and electrically connects to the doped layer 112. The connection structure connects the conductive structures corresponding to two adjacent vias. The through-hole includes a first hole 121, a second hole 122, and a third hole 123 arranged sequentially along a first direction. The conductive structure includes a first conductive part 1311, a second conductive part 1312, and a third conductive part 1313 corresponding to the first hole 121, the second hole 122, and the third hole 123. The connection structure includes a first connecting part 1321 and a second connecting part 1322. The first connecting part 1321 connects the first conductive part 1311 and the second conductive part 1312, and the second connecting part 1322 connects the second conductive part 1312 and the third conductive part 1313. The center line of the first connecting part 1321 and the center line of the second connecting part 1322 are spaced apart in a second direction, and the second direction intersects the first direction.

[0024] In the solar cell 100 of this application embodiment, since the center lines of the two connecting portions connected to the second conductive portion 1312 of the doped layer 112 through the through hole of the passivation layer 12 are spaced apart in the second direction, the overlapping area of ​​the two connecting portions connected to the second conductive portion 1312 in the first direction is small. This can reduce the light-shielding area and material usage of the fine grid 13 while ensuring connection to the doped layer 112, which is beneficial to improving photoelectric conversion efficiency and reducing cost.

[0025] Specifically, the solar cell 100 can be a sliced ​​cell formed by cutting a whole cell. The solar cell 100 can also be an uncut whole cell. The whole solar cell 100 may include slicing grooves, along which the whole cell can be cut to obtain sliced ​​cells. The whole solar cell 100 can be asymmetrical or symmetrical along the slicing grooves.

[0026] Specifically, the silicon substrate 111 may include a silicon substrate and a doped layer 112 disposed on the silicon substrate. Further, the silicon substrate may be a P-type silicon substrate or an N-type silicon substrate; it may be a monocrystalline silicon substrate or a polycrystalline silicon substrate. The specific form of the silicon substrate is not limited here.

[0027] Furthermore, the doped layer 112 may include a first polar doped layer 112 and a second polar doped layer 112, wherein the first polar doped layer 112 and the second polar doped layer 112 have different doping polarities. The two doped layers 112 can be formed by diffusion into the silicon substrate or by deposition of a film layer on the silicon substrate. In the thickness direction of the solar cell 100, the first polar doped layer 112 and the second polar doped layer 112 are stacked on the silicon substrate.

[0028] Please see Figure 3 The first polar doped layer 112 and the second polar doped layer 112 can be stacked on opposite sides of the silicon substrate, respectively. Figure 3 The doped layer 112 shown is one of a first polar doped layer 112 and a second polar doped layer 112. The other of the first polar doped layer 112 and the second polar doped layer 112 is not shown. In other words, the solar cell 100 can be a bifacial contact cell.

[0029] It is understood that the first polar doped layer 112 and the second polar doped layer 112 can both be stacked on the same side of the silicon substrate. The first polar doped layer 112 and the second polar doped layer 112 are isolated from each other. In other words, the solar cell 100 can be a back contact cell.

[0030] Specifically, the passivation layer 12 includes at least one of silicon nitride, silicon oxide, and silicon oxynitride. The specific material of the passivation layer 12 is not limited herein.

[0031] Specifically, the passivation layer 12 may cover the doped layer 112. The passivation layer 12 may also cover the doped layer 112 and the silicon substrate exposed by the self-doped layer 112. The specific form in which the passivation layer 12 is disposed on the silicon substrate 111 is not limited here.

[0032] Specifically, the passivation layer 12 has a plurality of through holes. The number of through holes can be one, two, three, four, or other numbers. No limitation is made here. The shape of the through holes can be circular, elliptical, triangular, rectangular, square, or other shapes. No limitation is made here.

[0033] Specifically, the fine gate 13 may include a first polar fine gate 13 and a second polar fine gate 13, which are electrically connected to the first polar doped layer 112 and the second polar doped layer 112, respectively. Figure 1 , Figure 2 and Figure 3 The fine gate 13 shown is one of a first polarity fine gate 13 and a second polarity fine gate 13. The other of the first polarity fine gate 13 and the second polarity fine gate 13 is not shown.

[0034] Specifically, the number of first polar fine gates 13 can be 1, 2, 3, 4, or other numbers. The number of second polar fine gates 13 can be 1, 2, 3, 4, or other numbers. No limitation is made here. The number of first polar fine gates 13 and the number of second polar fine gates 13 can be the same or different.

[0035] Please see Figure 1 , Figure 2 and Figure 3 The fine gate 13 includes a conductive structure and a connecting structure. The conductive structure electrically connects to the doped layer 112 through the vias, and the connecting structure connects the conductive structures corresponding to two adjacent vias. In this way, the charge carriers collected in the doped layer 112 are discharged through the conductive structure, and the conductive structure is connected through the connecting structure.

[0036] Specifically, the number of conductive structures can be one, two, three, four, or other numbers. The number of connecting structures can be one, two, three, four, or other numbers. No limitation is made here.

[0037] Specifically, the conductive structure can fill the entire area of ​​the via. Alternatively, the conductive structure can fill a portion of the via. No limitation is made here.

[0038] Specifically, the conductive structure and the connecting structure can be an integral unit. This allows for direct electrical conduction between the two structures, resulting in a better electrical connection. Furthermore, the conductive and connecting structures can be fabricated simultaneously, improving manufacturing efficiency. Alternatively, the conductive and connecting structures can be separate units, fabricated separately. This allows for greater flexibility in the materials and structure of the conductive and connecting structures, making them adaptable to a wider range of practical production scenarios.

[0039] It is understood that the explanations and descriptions of the first conductive part 1311, the second conductive part 1312, and the third conductive part 1313 can be referenced in conjunction with the explanations and descriptions of the conductive structure. The explanations and descriptions of the first connecting part 1321 and the second connecting part 1322 can be referenced in conjunction with the explanations and descriptions of the connecting structure. The explanations and descriptions of the first hole 121, the second hole 122, and the third hole 123 can be referenced in conjunction with the explanations and descriptions of the through hole.

[0040] Please see Figure 1, Figure 2 and Figure 3 The through-hole includes a first hole 121, a second hole 122, and a third hole 123 arranged sequentially along a first direction. The conductive structure includes a first conductive part 1311, a second conductive part 1312, and a third conductive part 1313 corresponding to the first hole 121, the second hole 122, and the third hole 123. The connection structure includes a first connecting part 1321 and a second connecting part 1322. The first connecting part 1321 connects the first conductive part 1311 and the second conductive part 1312, and the second connecting part 1322 connects the second conductive part 1312 and the third conductive part 1313.

[0041] Specifically, the centers of the first hole 121, the second hole 122, and the third hole 123 can be on the same straight line. Alternatively, the centers of the first hole 121, the second hole 122, and the third hole 123 may not be on the same straight line. The diameters of the first hole 121, the second hole 122, and the third hole 123 can be the same or different.

[0042] Specifically, the centers of the first conductive part 1311, the second conductive part 1312, and the third conductive part 1313 may be on the same straight line. Alternatively, the centers of the first conductive part 1311, the second conductive part 1312, and the third conductive part 1313 may not be on the same straight line. The dimensions of the first conductive part 1311, the second conductive part 1312, and the third conductive part 1313 in the first direction may be the same or different. The dimensions of the first conductive part 1311, the second conductive part 1312, and the third conductive part 1313 in the second direction may be the same or different.

[0043] Specifically, the dimensions of the first connecting portion 1321 and the second connecting portion 1322 in the first direction may be the same or different. The dimensions of the first connecting portion 1321 and the second connecting portion 1322 in the second direction may be the same or different.

[0044] Specifically, in this embodiment, both the first connecting portion 1321 and the second connecting portion 1322 are straight lines. It can be understood that in other examples, the first connecting portion 1321 may be curved, polygonal, or other shapes; and the second connecting portion 1322 may be wavy, polygonal, or other shapes.

[0045] Please see Figure 1 , Figure 2 and Figure 3 The center line of the first connecting portion 1321 and the center line of the second connecting portion 1322 are spaced apart in a second direction, and the second direction intersects the first direction. In other words, the center line of the first connecting portion 1321 and the center line of the second connecting portion 1322 form a distance W in the second direction.

[0046] Specifically, in Figure 1 and Figure 2 In the example, the center line of the first connecting portion 1321 and the center line of the second connecting portion 1322 are both straight lines. The distance W between the center lines of the first connecting portion 1321 and the second connecting portion 1322 is equal everywhere.

[0047] It is understood that in other examples, the centerline of the first connecting portion 1321 may be a curve, a broken line, or other shapes. The centerline of the second connecting portion 1322 may be a curve, a broken line, or other shapes. The distance W between the centerlines of the first connecting portion 1321 and the second connecting portion 1322 may vary in different locations; some locations may be the same, while others may be different.

[0048] It is understood that when the distance W between the center lines of the first connecting portion 1321 and the second connecting portion 1322 in the second direction is not equal everywhere, the distance W between the center lines of the first connecting portion 1321 and the second connecting portion 1322 in the second direction can refer to the minimum distance between the center lines of the first connecting portion 1321 and the second connecting portion 1322 in the second direction. The distance between the center lines of the first connecting portion 1321 and the second connecting portion 1322 in the second direction can refer to the minimum distance between the center lines of the first connecting portion 1321 and the second connecting portion 1322 in the second direction being greater than 0.

[0049] Please see Figure 1 and Figure 2 In some embodiments, the distance W between the center line of the first connecting portion 1321 and the center line of the second connecting portion 1322 in the second direction is greater than 0 and less than or equal to 500 μm. For example, it is 0.01 μm, 0.05 μm, 1 μm, 3 μm, 5 μm, 10 μm, 50 μm, 100 μm, 150 μm, 200 μm, 250 μm, 300 μm, 350 μm, 400 μm, 450 μm, or 500 μm.

[0050] In this way, the distance W between the center line of the first connecting part 1321 and the center line of the second connecting part 1322 in the second direction is within a suitable range. This avoids the situation where the two connecting parts connected to the second conductive part 1312 overlap in the first direction, resulting in a large light-shielding area and a large amount of material used, due to the small distance. It also avoids the situation where the distance is too large, resulting in interference with other structures of the battery. For example, in a back contact battery, an excessively large distance may cause the battery to conduct with adjacent doped regions or grid lines of different polarities, leading to a short circuit.

[0051] Specifically, the distance W between the center line of the first connecting portion 1321 and the center line of the second connecting portion 1322 in the second direction can be a fixed value within the range of (0, 500 μm). The distance W between the center line of the first connecting portion 1321 and the center line of the second connecting portion 1322 in the second direction can also vary within the range of (0, 500 μm). No limitation is imposed here.

[0052] Please see Figure 1 and Figure 2 In some embodiments, the through-hole is a circular hole with a diameter of 1μm-30μm. For example, it is 1μm, 1.5μm, 2μm, 5μm, 8μm, 10μm, 15μm, 18μm, 20μm, 25μm, 28μm, or 30μm.

[0053] This ensures that the diameter of the via is within a suitable range. It avoids situations where an excessively small diameter results in a small contact area between the conductive structure and the doped layer 112, leading to poor carrier extraction. Conversely, an excessively large diameter avoids situations where the conductive structure has an excessively large area, excessively blocks light, wastes paste, or interferes with other battery structures. For example, in a back-contact battery, an excessively large via diameter could cause the conductive structure to become connected to adjacent doped regions or grid lines of different polarities, resulting in a short circuit.

[0054] Preferably, the diameter of the via is 5μm-20μm. For example, it can be 5μm, 6μm, 8μm, 10μm, 12μm, 15μm, 18μm, or 20μm. This further optimizes the via diameter, balancing the effectiveness of carrier extraction, the cost of the corresponding conductive structure, and compatibility with other structures, resulting in a better overall performance.

[0055] In some embodiments, the through-hole is a rectangular hole with a long side length of 1μm-30μm. Examples include 1μm, 1.5μm, 2μm, 5μm, 8μm, 10μm, 15μm, 18μm, 20μm, 25μm, 28μm, and 30μm. Preferably, the long side length is 5μm-20μm. Explanations and descriptions of this part can be found above; to avoid redundancy, they will not be repeated here.

[0056] In some embodiments, the through-hole is an elliptical hole with a major axis length of 1μm-30μm. Examples include 1μm, 1.5μm, 2μm, 5μm, 8μm, 10μm, 15μm, 18μm, 20μm, 25μm, 28μm, and 30μm. Preferably, the major axis length is 5μm-20μm. Explanations and descriptions of this part can be found above; to avoid redundancy, they will not be repeated here.

[0057] It is understood that in other embodiments, the through hole may be a square hole, a triangular hole, a hexagonal hole, or other shapes, and is not limited here.

[0058] Please see Figure 1 and Figure 2 In some embodiments, the spacing L between two adjacent through holes is 50μm-200μm. For example, it is 50μm, 60μm, 80μm, 100μm, 120μm, 150μm, 180μm, or 200μm.

[0059] This ensures that the spacing L between two adjacent vias is within a suitable range. It avoids the situation where the conductive structure is too dense, too much light is blocked, and paste is wasted due to the spacing L being too small. It also avoids the situation where the carrier extraction effect is poor due to the spacing L being too large.

[0060] Please see Figure 1 and Figure 2 In some embodiments, the solar cell 100 satisfies the following formula: 0.5D < W; Wherein, W is the distance between the center line of the first connecting part 1321 and the center line of the second connecting part 1322 in the second direction, and D is the diameter of the second hole 122.

[0061] Thus, the distance W between the center line of the first connecting part 1321 and the center line of the second connecting part 1322 in the second direction is greater than the radius of the through hole, making the distance W between the center line of the first connecting part 1321 and the center line of the second connecting part 1322 in the second direction sufficiently large, which is beneficial to reduce the blocking of light by the connecting structure and the waste of slurry.

[0062] Specifically, W can be 0.51D, 0.52D, 0.55D, 0.6D, 0.8D, D, 2D, 4D, 5D, etc. No specific limit is imposed here.

[0063] Please see Figure 1 and Figure 2 In some embodiments, the solar cell 100 satisfies the following formula: D < X ≤ Y1 + Y2; Where D is the diameter of the second hole 122, X is the dimension of the second conductive part 1312 in the second direction, and Y1 and Y2 are the dimensions of the first connecting part 1321 and the second connecting part 1322 in the second direction, respectively.

[0064] Thus, the dimension X of the second conductive part 1312 in the second direction is larger than the diameter of the through hole, ensuring that the second conductive part 1312 can cover the through hole. At the same time, the dimension X of the second conductive part 1312 in the second direction is less than or equal to the sum of the dimensions of the first connecting part 1321 and the second connecting part 1322 in the second direction, which can avoid the second conductive part 1312 being too large in the second direction, thus avoiding light blocking and slurry waste.

[0065] Please see Figure 1 and Figure 2 In some embodiments, the size A1 of the conductive structure in the first direction is 1.5 μm to 30.5 μm. For example, it is 1.5 μm, 1.8 μm, 2 μm, 5 μm, 10 μm, 15 μm, 18 μm, 20 μm, 22 μm, 25 μm, 28 μm, 30 μm, or 30.5 μm.

[0066] Thus, the size A1 of the conductive structure in the first direction is within a suitable range, which can avoid the problem of the conductive structure being too small in the first direction, which would make it difficult to completely cover the through hole and result in poor carrier extraction. It can also avoid the problem of the conductive structure being too large in the first direction, which would result in excessive light blocking and waste of paste.

[0067] Preferably, the dimension A1 of the conductive structure in the first direction is 5μm-20μm. For example, it is 5μm, 8μm, 10μm, 12μm, 15μm, 18μm, or 20μm. In this way, further optimization of the dimension A1 of the conductive structure in the first direction balances the effect of carrier extraction, light shielding, and cost, resulting in better overall performance.

[0068] Please see Figure 1 and Figure 2 In some embodiments, the size A2 of the conductive structure in the second direction is 1.5 μm to 30.5 μm. For example, it is 1.5 μm, 1.8 μm, 2 μm, 5 μm, 10 μm, 15 μm, 18 μm, 20 μm, 22 μm, 25 μm, 28 μm, 30 μm, or 30.5 μm.

[0069] Thus, the size A2 of the conductive structure in the second direction is within a suitable range, which can avoid the problem of the conductive structure being too small in the second direction, which would make it difficult to completely cover the through hole and result in poor carrier extraction. It can also avoid the problem of the conductive structure being too large in the second direction, which would result in excessive light blocking and waste of paste.

[0070] Preferably, the dimension A2 of the conductive structure in the second direction is 5μm-20μm. For example, it is 5μm, 8μm, 10μm, 12μm, 15μm, 18μm, or 20μm. In this way, further optimization of the dimension A2 of the conductive structure in the second direction balances the effect of carrier extraction, light shielding, and cost, resulting in better overall performance.

[0071] Please see Figure 1 and Figure 2In some embodiments, the difference between the dimension A1 of the conductive structure in the first direction and the dimension of the corresponding via in the first direction is greater than or equal to 0.5 μm. For example, it is 0.5 μm, 0.8 μm, 1 μm, 1.2 μm, 1.5 μm, 1.8 μm, or 2 μm. This ensures that the dimension A1 of the conductive structure in the first direction is sufficient to cover the corresponding via, thereby ensuring the effectiveness of carrier extraction.

[0072] Please see Figure 1 and Figure 2 In some embodiments, the difference between the dimension A2 of the conductive structure in the second direction and the dimension of the corresponding via in the second direction is greater than or equal to 0.5 μm. For example, it is 0.5 μm, 0.8 μm, 1 μm, 1.2 μm, 1.5 μm, 1.8 μm, or 2 μm. This ensures that the dimension A2 of the conductive structure in the second direction is sufficient to cover the corresponding via, thereby guaranteeing the effectiveness of carrier extraction.

[0073] Please see Figure 1 and Figure 2 In some embodiments, the dimension B1 of the connection structure in the first direction is 10μm-200μm. For example, it is 10μm, 12μm, 15μm, 18μm, 20μm, 40μm, 50μm, 80μm, 100μm, 120μm, 150μm, 180μm, or 200μm.

[0074] Thus, the dimension B1 of the connecting structure in the first direction is within a suitable range, which can avoid the difficulty in connecting to two adjacent conductive structures due to the dimension B1 of the connecting structure being too small, and can also avoid interference with the conductive structure or waste of paste due to the dimension B1 of the connecting structure being too large.

[0075] Please see Figure 1 and Figure 2 In some embodiments, the dimensions of the connection structure in the second direction are 10μm-100μm. For example, 10μm, 12μm, 15μm, 18μm, 20μm, 40μm, 50μm, 80μm, and 100μm.

[0076] This ensures that the dimensions of the connecting structure in the second direction are within a suitable range, avoiding the risk of breakage and poor electrical connection caused by an excessively small size of the connecting structure in the second direction, as well as the risk of excessive light shading and waste of slurry caused by an excessively large size of the connecting structure in the second direction.

[0077] Specifically, the dimensions of the connecting structure in the second direction, such as the dimension Y1 of the first connecting part 1321 in the second direction, and the dimension Y2 of the second connecting part 1322 in the second direction, can satisfy that the dimensions of the connecting structure in the second direction are 10μm-100μm.

[0078] The battery assembly of this application embodiment includes the solar cell 100 of any of the above.

[0079] In the battery module of this application embodiment, since the center lines of the two connecting portions connected to the second conductive portion 1312 of the doped layer 112 through the through hole of the passivation layer 12 in the solar cell 100 are spaced apart in the second direction, the overlapping area of ​​the two connecting portions connected to the second conductive portion 1312 in the first direction is small. This can reduce the light-shielding area and material usage of the fine grid 13 while ensuring connection to the doped layer 112, which is beneficial to improving photoelectric conversion efficiency and reducing cost.

[0080] In this embodiment, multiple solar cells 100 in the battery module can be connected in series to form a battery string, thereby realizing the series current collection and output. For example, the battery cells can be connected in series by setting solder strips (busbars, interconnecting strips), conductive backplates, etc.

[0081] It is understood that in such embodiments, the battery assembly may also include a metal frame, a backsheet, photovoltaic glass, and an encapsulating film. The encapsulating film may be filled between the front and back of the solar cell 100, the photovoltaic glass, adjacent cells, etc. As a filler, it may be a transparent colloid with good light transmittance and aging resistance. For example, the encapsulating film may be an EVA film or a POE film, and the specific choice can be made according to the actual situation, without limitation.

[0082] Photovoltaic glass can be applied to the encapsulating film on the front side of the solar cell 100. This photovoltaic glass can be ultra-clear glass, possessing high light transmittance, high transparency, and superior physical, mechanical, and optical properties. For example, ultra-clear glass can achieve a light transmittance of over 92%, protecting the solar cell 100 while minimizing impact on its efficiency. Simultaneously, the encapsulating film bonds the photovoltaic glass and the solar cell 100 together, providing sealing, insulation, and waterproofing / moisture protection for the solar cell 100.

[0083] The backsheet can be attached to the encapsulant film on the back of the solar cell 100. The backsheet provides protection and support for the solar cell 100, offering reliable insulation, water resistance, and aging resistance. Multiple backsheet options are available, typically including tempered glass, acrylic glass, and aluminum alloy TPT composite encapsulant film, etc. The specific choice depends on the specific circumstances and is not limited here. The backsheet, solar cell 100, encapsulant film, and photovoltaic glass can be mounted on a metal frame. The metal frame serves as the main external support structure for the entire battery module, providing stable support and installation. For example, the battery module can be installed at the desired location using the metal frame.

[0084] The photovoltaic system of this application embodiment includes the battery module described above.

[0085] In the photovoltaic system of this application embodiment, since the center lines of the two connecting portions connected to the second conductive portion 1312 of the doped layer 112 through the through hole of the passivation layer 12 in the solar cell 100 are spaced apart in the second direction, the overlapping area of ​​the two connecting portions connected to the second conductive portion 1312 in the first direction is small. This can reduce the light-shielding area and material usage of the fine grid 13 while ensuring connection to the doped layer 112, which is beneficial to improving photoelectric conversion efficiency and reducing costs.

[0086] In this embodiment, the photovoltaic system can be applied in photovoltaic power plants, such as ground-mounted power plants, rooftop power plants, and floating power plants. It can also be applied to equipment or devices that utilize solar energy to generate electricity, such as user solar power supplies, solar streetlights, solar cars, and solar buildings. Of course, it is understood that the application scenarios of the photovoltaic system are not limited to these; that is, the photovoltaic system can be applied in all fields that require solar energy to generate electricity. Taking a photovoltaic power generation system network as an example, the photovoltaic system may include a photovoltaic array, a combiner box, and an inverter. The photovoltaic array may be an array combination of multiple battery modules; for example, multiple battery modules can form multiple photovoltaic arrays. The photovoltaic array is connected to the combiner box, which can collect the current generated by the photovoltaic array. The collected current flows through the inverter and is converted into AC power required by the mains power grid before being connected to the mains power grid to achieve solar power supply.

[0087] In the description of this specification, the references to terms such as "some embodiments," "illustrative embodiments," "examples," "specific examples," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with an embodiment or example is included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0088] Furthermore, the above are merely preferred embodiments of this application and are not intended to limit this application. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of this application should be included within the scope of protection of this application.

Claims

1. A solar cell, characterized in that, include: Silicon substrate, including doped layers; A passivation layer is provided on the silicon substrate and has a plurality of through holes; A fine gate includes a conductive structure and a connecting structure, wherein the conductive structure is electrically connected to the doped layer through the via, and the connecting structure connects the conductive structures corresponding to two adjacent vias. The through hole includes a first hole, a second hole, and a third hole arranged sequentially along a first direction; the conductive structure includes a first conductive part, a second conductive part, and a third conductive part corresponding to the first hole, the second hole, and the third hole; and the connection structure includes a first connection part and a second connection part, wherein the first connection part connects the first conductive part and the second conductive part, and the second connection part connects the second conductive part and the third conductive part. The centerline of the first connecting portion and the centerline of the second connecting portion are spaced apart in a second direction, and the second direction intersects the first direction.

2. The solar cell according to claim 1, characterized in that, The distance between the center line of the first connecting part and the center line of the second connecting part in the second direction is greater than 0 and less than or equal to 500 μm.

3. The solar cell according to claim 1, characterized in that, The through hole is a circular hole with a diameter of 1μm-30μm; or, the through hole is a rectangular hole with a long side length of 1μm-30μm; or, the through hole is an elliptical hole with a major axis length of 1μm-30μm.

4. The solar cell according to claim 1, characterized in that, The solar cell satisfies the following formula: 0.5D < W; Wherein, W is the distance between the center line of the first connecting part and the center line of the second connecting part in the second direction, and D is the diameter of the second hole.

5. The solar cell according to claim 1, characterized in that, The solar cell satisfies the following formula: D<X≤Y1+Y2; Where D is the diameter of the second hole, X is the dimension of the second conductive part in the second direction, and Y1 and Y2 are the dimensions of the first connecting part and the second connecting part in the second direction, respectively.

6. The solar cell according to claim 1, characterized in that, The conductive structure has a size of 1.5 μm-30.5 μm in the first direction.

7. The solar cell according to claim 1, characterized in that, The dimensions of the connection structure in the first direction are 10μm-200μm.

8. The solar cell according to claim 1, characterized in that, The dimensions of the connection structure in the second direction are 10μm-100μm.

9. A battery assembly, characterized in that, Includes the solar cell according to any one of claims 1-8.

10. A photovoltaic system, characterized in that, Includes the battery assembly as described in claim 9.

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