Thin film deposition apparatus

Abstract

A thin film deposition apparatus includes a reaction chamber, a carrier, a shower head, a plasma generating system, a first gas supply device and a second gas supply device. The plasma generating system includes a plasma generator to deliver a plasma gas in a vertical direction within the reaction chamber via a plasma line. The first gas supply device delivers a first precursor gas in a horizontal direction within the reaction chamber via a first line. The second gas supply device delivers a second precursor gas in a vertical direction within the reaction chamber via a second line. The first gas supply device provides the first precursor gas first, and the second gas supply device starts to provide the second precursor gas later, during which the plasma generator continuously delivers the plasma gas without being shut down. The time for the plasma generator to reach a steady state after being turned on is saved, and the efficiency of the thin film process is improved.

Description

Technical Field

[0001] This utility model relates to a thin film deposition apparatus, and more particularly to a thin film deposition apparatus having a plasma generation system. Background Technology

[0002] Thin film deposition technology plays a crucial role in the semiconductor industry. Common techniques include physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma-enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD), plasma-enhanced atomic layer deposition (PEALD), pulse deposition layer (PDL), and plasma-enhanced pulse deposition layer (PEPDL).

[0003] In existing technologies, plasma dissociation can improve the quality and efficiency of atomic layer deposition. However, in bidirectional flow process chambers, different precursor gases may or may not require plasma excitation. This results in the plasma generator being repeatedly turned on and off, and the plasma generator requires a period of time to reach a stable state before restarting, which will delay the efficiency of thin film processes.

[0004] In addition, in existing semiconductor processes, an annealing process is usually performed after thin film formation to repair defects and achieve high density. However, this also extends the overall semiconductor process time.

[0005] Therefore, improving the structural design to shorten the time for the plasma generator to reach a stable state, simplify the thin film annealing process, and significantly reduce the semiconductor manufacturing time has become an important issue. Utility Model Content

[0006] The purpose of this invention is to provide a thin film deposition apparatus to solve at least one of the above-mentioned problems.

[0007] This invention provides a thin film deposition apparatus, comprising: a reaction chamber, a stage, a spray head, a plasma generation system, a first gas supply device, and a second gas supply device. The stage is disposed within the reaction chamber and includes a heater. The spray head is located at the top of the reaction chamber and has multiple spray holes facing the stage. The plasma generation system includes a plasma generator connected to the reaction chamber, supplying plasma gas vertically into the reaction chamber via a plasma pipeline. The plasma gas is sprayed onto the stage through the multiple spray holes. The first gas supply device is connected to the reaction chamber and supplying a first precursor gas horizontally into the reaction chamber via a first pipeline. The second gas supply device is connected to the reaction chamber and supplying a second precursor gas vertically into the reaction chamber via a second pipeline. The second precursor gas is sprayed onto the stage through the multiple spray holes. During the process, the first gas supply device first supplies the first precursor gas, and then the second gas supply device begins supplying the second precursor gas. The plasma generator continuously supplies plasma gas during the process without shutting off.

[0008] According to a feasible embodiment, the thin film deposition apparatus further includes a workpiece disposed on a stage, and a heater heating the workpiece. A first precursor gas, unaffected by the plasma gas, is deposited on the surface of the workpiece to form a first thin film. A second precursor gas, stimulated by the plasma gas, is deposited on the first thin film to form a second thin film, and annealing is performed simultaneously.

[0009] According to a feasible implementation scheme, the plasma generation system also includes a power supply located below the reaction chamber, which generates a bias voltage and provides a bias field within the reaction chamber.

[0010] According to a feasible implementation plan, the plasma generation system also includes a flow module connected to the plasma pipeline for controlling the flow rate of the plasma gas.

[0011] According to a feasible implementation plan, the plasma generator provides 1-5000W of energy.

[0012] This invention also provides a method for thin film deposition, comprising: providing a thin film deposition apparatus; providing a workpiece on a stage, the stage having a heater for heating the workpiece; providing a plasma generation system, including a plasma generator and a plasma pipeline, the plasma pipeline continuously supplying plasma gas in a vertical direction into a reaction chamber, the plasma gas being sprayed onto the workpiece through multiple spray holes; supplying a first precursor gas in a horizontal direction into the reaction chamber, the first precursor gas being unaffected by the plasma gas and depositing a first thin film on the surface of the workpiece; supplying a second precursor gas in a vertical direction into the reaction chamber, the second precursor gas being sprayed onto the workpiece through multiple spray holes and, being excited by the plasma gas, depositing a second thin film on the first thin film.

[0013] According to a feasible implementation scheme, the second precursor gas is simultaneously subjected to annealing treatment when forming the second thin film.

[0014] One of the beneficial effects of this utility model is that the thin film deposition equipment provided by this utility model can save the time of restarting the plasma generator to reach a stable state by means of the technical solution that "during the process, the first gas supply device first provides the first precursor gas, and the second gas supply device then starts to provide the second precursor gas, and the plasma generator continuously supplies plasma gas without shutting down during the process". This improves the efficiency of the thin film process.

[0015] One of the beneficial effects of this invention is that the thin film deposition method provided by this invention can continuously deliver plasma gas into the reaction chamber through a plasma pipeline in a vertical direction via a plasma generator, and spray the plasma gas onto the workpiece through multiple spray holes. This eliminates the need for the plasma generator to be repeatedly turned off and restarted, saving the time required for the plasma system to reach a stable state after restarting, thereby improving the processing efficiency of thin films.

[0016] To further understand the features and technical content of this utility model, please refer to the following detailed description and drawings of this utility model. However, the drawings provided are for reference and illustration only and are not intended to limit this utility model. Attached Figure Description

[0017] Figure 1 This is a schematic diagram of an embodiment of the thin film deposition apparatus of this utility model.

[0018] Figure 2 This is a schematic diagram of an embodiment of the thin film deposition apparatus of this utility model.

[0019] Figure 3 This is a schematic diagram of an embodiment of the thin film deposition apparatus of this utility model.

[0020] Figure 4 This is a schematic diagram of the thin film deposition method of this utility model.

[0021] Figure label: Z1-Z3: Thin film deposition equipment; 100: Method; 1: Reaction chamber; 2: Stage; 21: Heater; 3: Spray head; 31: Spray hole; 4: Plasma generation system; 41: Plasma generator; 42: Power supply; 43: Flow module; 44: Plasma pipeline; 5: First gas supply device; 6: First pipeline; 7: Second gas supply device; 8: Second pipeline; D1: Vertical direction; D2: Horizontal direction; W: Workpiece; S1-S5: Steps. Detailed Implementation

[0022] The following specific embodiments illustrate the implementation of the "thin film deposition apparatus and method" disclosed in this utility model. Those skilled in the art can understand the advantages and effects of this utility model from the content disclosed in this specification. This utility model can be implemented or applied through other different specific embodiments, and various details in this specification can also be modified and changed based on different viewpoints and applications without departing from the concept of this utility model. Furthermore, the accompanying drawings of this utility model are for simple illustrative purposes only and are not depictions of actual dimensions, as stated in advance. The following embodiments will further describe the relevant technical content of this utility model in detail, but the disclosed content is not intended to limit the scope of protection of this utility model.

[0023] Please see Figure 1 This is a schematic diagram of an embodiment of the thin film deposition apparatus Z1 of this utility model. The thin film deposition apparatus Z1 includes a reaction chamber 1, a stage 2, a spray head 3, a plasma generation system 4, a first gas supply device 5, and a second gas supply device 7. The stage 2 is disposed inside the reaction chamber 1 and has a heater 21. The spray head 3 is disposed at the top of the reaction chamber 1 and has multiple spray holes 31 facing the stage 2. The plasma generation system 4 includes a plasma generator 41, which is connected to the reaction chamber 1 and supplies plasma gas into the reaction chamber 1 in a vertical direction D1 via a plasma pipeline 44. The plasma gas is sprayed onto the stage 2 through the multiple spray holes 31. The first gas supply device 5 is connected to the reaction chamber 1 and supplies a first precursor gas into the reaction chamber 1 in a horizontal direction D2 via a first pipeline 6. The second gas supply device 7 is connected to the reaction chamber 1 and supplies the second precursor gas into the reaction chamber 1 via the second pipeline 8 in the vertical direction D1. The second precursor gas is sprayed onto the stage 2 through multiple spray holes 31. During the process, the first gas supply device 5 supplies the first precursor gas first, and then the second gas supply device starts to supply the second precursor gas. The plasma generator 41 continuously supplies plasma gas during the process without being turned off.

[0024] In other words, during the thin film deposition process, the plasma generator 41 is turned on and then turned off at the end of the process, during which time the plasma generator 41 continuously supplies plasma gas into the reaction chamber 1. Furthermore, in... Figure 1 In the illustrated embodiment, a workpiece W, such as a wafer, is mounted on the stage 2. A heater 21 heats the wafer. Although the plasma generator 41 continuously supplies plasma gas, the first precursor gas is unaffected by the plasma gas and deposits as a first thin film on the wafer surface. The second precursor gas is excited by the plasma gas and deposits as a second thin film on the first thin film, while simultaneously undergoing annealing. After annealing, the second thin film exhibits increased density and ferroelectric material properties. This contributes to improving the quality and efficiency of thin film deposition.

[0025] Furthermore, users can adjust the energy of the plasma generator 41 for different precursor gases for the desired (formed) thin film, so that the first precursor gas is not affected by the plasma gas, while the second precursor gas is excited by the plasma gas and deposited onto the wafer surface to form the film. Moreover, the second precursor gas is also affected by the plasma gas during the forming process and undergoes annealing treatment to improve the density of the second thin film.

[0026] Please see Figure 2 This is a schematic diagram of an embodiment of the thin film deposition apparatus Z2 of this utility model. In this embodiment, the plasma generation system 4 further includes a power supply 42, which is disposed below the reaction chamber 1. The power supply 42 can generate a bias voltage, providing a bias field within the reaction chamber 1. Thus, by generating a bias voltage through the power supply 42, the ionization efficiency of the plasma gas can be controlled.

[0027] Please see Figure 3 This is a schematic diagram of an embodiment of the thin film deposition apparatus Z3 of this utility model. In this embodiment, the plasma generation system 4 further includes a flow module 43 connected to the plasma pipeline 44 for controlling the flow rate of the plasma gas. The flow module 43 (e.g., a valve) can control the flow rate of the plasma gas.

[0028] According to some embodiments, the plasma generator 41 provides an energy of 1-5000W (any positive integer within this range).

[0029] Please see Figure 4 And see also Figure 1 , Figure 4This is a schematic diagram of the thin film deposition method of this utility model. The thin film deposition method 100 includes steps S1 to S5. Step S1: Provide a thin film deposition apparatus. Step S2: Provide a workpiece W on a stage 2. The stage 2 has a heater 21, which heats the workpiece W. Step S3: Provide a plasma generation system 4, including a plasma generator 41 and a plasma pipeline 44. The plasma pipeline 44 continuously delivers plasma gas into a reaction chamber 1 along a vertical direction D1. The plasma gas is sprayed onto the workpiece W through multiple spray holes. Step S4: Deliver a first precursor gas into the reaction chamber 1 along a horizontal direction D2. The first precursor gas is unaffected by the plasma gas and deposits a first thin film on the surface of the workpiece W. Step S5: Deliver a second precursor gas into the reaction chamber 1 along a vertical direction D1. The second precursor gas is sprayed onto the workpiece W through multiple spray holes and is excited by the plasma gas, depositing a second thin film on the first thin film. According to some embodiments, the second precursor gas undergoes annealing simultaneously with the formation of the second thin film. By activating the plasma gas and simultaneously annealing the second thin film during its formation, the density of the second thin film can be improved, and ferroelectric material properties can be generated. This improves the efficiency and quality of the thin film process.

[0030] "Beneficial effects of the embodiments"

[0031] One of the beneficial effects of this utility model is that the thin film deposition equipment provided by this utility model can save the time of restarting the plasma generator to reach a stable state by means of the technical solution of "the first gas supply device first provides the first precursor gas, and the second gas supply device then starts to provide the second precursor gas, during which the plasma generator continuously supplies plasma gas without shutting down". This improves the efficiency of the thin film process.

[0032] One of the beneficial effects of this invention is that the thin film deposition method provided by this invention can continuously deliver plasma gas into the reaction chamber through a plasma pipeline in a vertical direction by a plasma generator, and spray the plasma gas onto the workpiece through multiple spray holes. This eliminates the need for the plasma generator to be repeatedly turned off and restarted, saving the time required for the plasma system to reach a stable state after restarting, thereby improving the processing efficiency of thin films.

[0033] One of the beneficial effects of this invention is that the thin film deposition equipment provided by this invention can deposit a second thin film on the first thin film by means of "the second precursor gas being excited by the plasma gas and simultaneously undergoing annealing treatment". After annealing treatment, the density of the second thin film will be improved and it can produce ferroelectric material properties, which helps to improve the quality and efficiency of thin film deposition.

[0034] One of the beneficial effects of this invention is that the thin film deposition method provided by this invention can improve the density of the second thin film and produce ferroelectric material properties through the technical solution of "excitation of the second precursor gas by plasma gas and simultaneous annealing treatment during the second thin film formation", thereby improving the efficiency and quality of the thin film process.

[0035] The above-disclosed content is only a preferred and feasible embodiment of the present utility model, and is not intended to limit the scope of protection of the claims of the present utility model. Therefore, all equivalent technical changes made based on the content of the present utility model specification and drawings are included in the scope of protection of the claims of the present utility model.

Claims

1. A thin film deposition apparatus, characterized by, The thin film deposition equipment includes: One reaction chamber; A stage is disposed within the reaction chamber, the stage having a heater; A spray head is disposed at the top of the reaction chamber, and the spray head has multiple spray holes facing the platform; A plasma generation system includes a plasma generator connected to the reaction chamber, and a plasma gas is delivered into the reaction chamber in a vertical direction via a plasma pipeline. The plasma gas is sprayed onto the stage through the plurality of spray holes. A first gas supply device, connected to the reaction chamber, supplies a first precursor gas into the reaction chamber via a first conduit in a horizontal direction; and A second gas supply device is connected to the reaction chamber and delivers a second precursor gas into the reaction chamber via a second pipeline along the vertical direction. The second precursor gas is sprayed onto the stage through the plurality of spray holes. During a process, the first gas supply device first provides the first precursor gas, and then the second gas supply device begins to provide the second precursor gas. The plasma generator continuously supplies the plasma gas during the process without shutting it off.

2. The thin film deposition apparatus of claim 1, wherein The thin film deposition apparatus further includes: a workpiece disposed on the stage, the heater heating the workpiece, wherein the first precursor gas is unaffected by the plasma gas and deposits a first thin film on the surface of the workpiece; the second precursor gas is excited by the plasma gas and deposits a second thin film on the first thin film, while simultaneously undergoing an annealing treatment.

3. The thin film deposition apparatus of claim 1, wherein The plasma generation system also includes a power supply located below the reaction chamber. The power supply generates a bias voltage and provides a bias field within the reaction chamber.

4. The thin film deposition apparatus of claim 1, wherein The plasma generation system also includes a flow module connected to the plasma pipeline for controlling the flow rate of the plasma gas.

5. The thin film deposition apparatus of claim 1, wherein The plasma generator provides 1-5000W of energy.

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