Optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component

Abstract

Optoelectronic semiconductor component with - a substrate-less optoelectronic semiconductor chip (1) having a first main surface (1a) on an upper side and a second main surface (1b) on an underside, - an electrically insulating layer (4), and - a metallic carrier (2) arranged on the underside of the optoelectronic semiconductor chip (1), wherein, - the metallic carrier (2) projects beyond the optoelectronic semiconductor chip (1) in at least one lateral direction (1), - the metallic carrier (3) is deposited galvanically or electrolessly on the second main surface (1b) of the optoelectronic semiconductor chip (1), - the electrically insulating layer (4) is designed to reflect electromagnetic radiation to be emitted or detected by the optoelectronic semiconductor chip (1) during operation, and - the electrically insulating layer (4) appears white.

Description

[0001] An optoelectronic semiconductor component is specified. Furthermore, a method for producing an optoelectronic semiconductor component is specified.

[0002] The publications DE 10 2005 053 274, WO 2006 / 032252, DE 10 2008 035 900 A1, DE 10 2007 046 743 A1, DE 103 55 600 A1, DE 10 2007 022 947 A1, DE 10 2008 035 254 A1, US 2008 / 0 254 650 A1 and WO 2009 / 079978 describe optoelectronic semiconductor components.

[0003] One problem to be solved is to provide an optoelectronic semiconductor component that has improved thermal properties. A further problem is to provide a method for producing such a semiconductor component.

[0004] These objects are achieved by an optoelectronic semiconductor component according to claim 1 and a method according to claim 13.

[0005] According to at least one embodiment of the optoelectronic semiconductor component, the optoelectronic semiconductor component comprises at least one substrateless optoelectronic semiconductor chip. The optoelectronic semiconductor chip can be a radiation-emitting semiconductor chip, in particular a light-emitting diode. The optoelectronic semiconductor chip is then formed by a laser diode or a light-emitting diode. The optoelectronic semiconductor chip is preferably configured to generate electromagnetic radiation in the wavelength range between UV radiation and infrared radiation, in particular visible light. Furthermore, it is possible for the optoelectronic semiconductor chip to be a radiation-detecting semiconductor chip, for example, a photodiode.

[0006] The optoelectronic semiconductor chip is presently designed without a substrate. This means that a growth substrate, onto which the semiconductor layers of the optoelectronic semiconductor chip are epitaxially grown, is separated from the epitaxially grown layers. The optoelectronic semiconductor chip therefore consists of its epitaxially grown semiconductor layers and, if appropriate, metallizations applied to an outer surface of the semiconductor body formed by the epitaxially grown semiconductor layers. The substrateless optoelectronic semiconductor chip is characterized, among other things, by its low thickness. The substrateless optoelectronic semiconductor chip preferably has a thickness of less than 10 µm, more preferably less than 7 µm, for example, approximately 6 µm.

[0007] The substrateless optoelectronic semiconductor chip has a first main surface on its top side and a second main surface on its bottom side. The two main surfaces can be connected to one another by at least one side surface. For example, electromagnetic radiation generated during operation exits the substrateless optoelectronic semiconductor chip largely through the first main surface. The second main surface can then serve as a mounting surface with which the optoelectronic semiconductor chip is mounted on a carrier. It is possible for the connection points for electrically contacting the optoelectronic semiconductor chip to be arranged on the second main surface. In this case, the optoelectronic semiconductor chip can be surface-mountable.

[0008] According to at least one embodiment of the optoelectronic semiconductor component, the optoelectronic semiconductor component comprises a metallic carrier arranged on the underside of the optoelectronic semiconductor chip. The metallic carrier is formed from a material having metallic properties. For example, the metallic carrier consists of a metal or a metal alloy. The metallic carrier is arranged on the underside of the optoelectronic semiconductor chip and is preferably mechanically attached to the optoelectronic semiconductor chip there.

[0009] According to at least one embodiment of the optoelectronic semiconductor component, the metallic carrier is deposited galvanically or electrolessly on the second main surface of the optoelectronic semiconductor chip. This means that the metallic carrier is produced by galvanic or electroless deposition. Production by galvanic or electroless deposition is a physical feature that can be clearly distinguished from other manufacturing methods on the finished optoelectronic semiconductor component. In particular, due to the absence of a connecting agent, such as solder metallization, between the metallic carrier and the optoelectronic semiconductor chip, it can be clearly demonstrated that the metallic carrier is deposited on the second main surface of the optoelectronic semiconductor chip and is not attached to the optoelectronic semiconductor chip in any other way.

[0010] According to at least one embodiment of the optoelectronic semiconductor component, the metallic carrier projects beyond the optoelectronic semiconductor chip in at least one lateral direction. The lateral directions are, for example, those directions that run parallel to the second main surface of the optoelectronic semiconductor chip. Thus, in the present case, the metallic carrier is not flush with the optoelectronic semiconductor chip in the lateral direction, but rather projects beyond it on at least one side surface. Preferably, the metallic carrier completely projects beyond the optoelectronic semiconductor chip. This means that the metallic carrier then projects beyond the optoelectronic semiconductor chip in all lateral directions, i.e., on all side surfaces of the optoelectronic semiconductor chip. Overall, the metallic carrier therefore has a larger footprint than the optoelectronic semiconductor chip.

[0011] According to at least one embodiment of the optoelectronic semiconductor component, the semiconductor component comprises a substrateless optoelectronic semiconductor chip having a first main surface on a top side and a second main surface on a bottom side. Furthermore, the optoelectronic semiconductor component comprises a metallic carrier arranged on the bottom side of the optoelectronic semiconductor chip, wherein the metallic carrier projects beyond the optoelectronic semiconductor chip in at least one lateral direction, and the metallic carrier is deposited galvanically or electrolessly on the second main surface of the optoelectronic semiconductor chip.

[0012] For electroplated or electroless deposited metallic carriers, the deposition of the metallic carriers onto the optoelectronic semiconductor chips has so far been carried out in a wafer composite for reasons of efficiency. As a result, the carrier is laterally flush with the optoelectronic semiconductor chip. The optoelectronic semiconductor component described here makes it possible to resolve this geometric dependency between the optoelectronic semiconductor chip and the metallic carrier. The metallic carrier can have different geometric dimensions and shapes than the optoelectronic semiconductor chip. This allows for a scalable metallic carrier, which is characterized, for example, by improved thermal coupling when using the optoelectronic semiconductor component. In other words, the metallic carrier on which the optoelectronic semiconductor chip is located can be designed to be geometrically variable.The metallic carrier, i.e., the base of the optoelectronic semiconductor chip, can be expanded laterally. This can, for example, achieve improved thermal coupling of the optoelectronic semiconductor component.

[0013] Furthermore, a method for producing an optoelectronic semiconductor component is specified. According to at least one embodiment of the method, a plurality of optoelectronic semiconductor chips is first provided, each of the optoelectronic semiconductor chips having a first main surface on a top side and a second main surface on a bottom side. The optoelectronic semiconductor chips are substrateless optoelectronic semiconductor chips. This means that the growth substrate of the optoelectronic semiconductor chips is removed before provision, and even before the plurality of substrateless optoelectronic semiconductor chips are provided, a semiconductor wafer, for example, is singulated into the plurality of substrateless optoelectronic semiconductor chips.

[0014] According to at least one embodiment of the method, in a next method step, the plurality of optoelectronic semiconductor chips are arranged on an intermediate carrier and mechanically fastened. For this purpose, the intermediate carrier can consist of a ceramic material or glass, for example. The fastening can be effected, for example, by means of a detachable adhesive connection. The optoelectronic semiconductor chips can be arranged on the intermediate carrier at any desired distance from one another. Preferably, the optoelectronic semiconductor chips are arranged at a distance from one another such that a gap is formed between each two immediately adjacent optoelectronic semiconductor chips. The size of this gap later determines the lateral extent of the carrier in the finished optoelectronic semiconductor component and thus how far the carrier projects laterally beyond the optoelectronic semiconductor chip.In the case of optoelectronic semiconductor chips, which are subject to particularly high thermal stress, for example, the gap can be chosen to be particularly large, resulting in a metallic carrier that projects particularly far in the lateral direction beyond the optoelectronic semiconductor chip.

[0015] According to at least one embodiment of the method, the gaps are filled with an electrically insulating layer in a next method step. The filling is carried out, for example, such that the electrically insulating layer is flush with the side of the optoelectronic semiconductor chips facing away from the intermediate carrier, i.e., the second main surface of the optoelectronic semiconductor chip on its underside. The electrically insulating layer can be formed, for example, with a silicone, an epoxy resin, or a combination of these materials. Furthermore, it is possible for the electrically insulating layer to contain PCB or spin-on glass or to consist of one of these materials.

[0016] According to at least one embodiment of the method, in a next method step, a seed layer is applied to the side of the optoelectronic semiconductor chips and the electrically insulating layer facing away from the intermediate carrier. The seed layer is formed, for example, with a metallic material and can be applied by vapor deposition or sputtering. The seed layer forms an intimate bond with the optoelectronic semiconductor chips and the electrically insulating layer. A metallic carrier is then deposited onto the seed layer by electroplating or electroless plating.

[0017] According to at least one embodiment of the method for producing an optoelectronic semiconductor component, the method comprises the following steps: - Providing a plurality of optoelectronic semiconductor chips, wherein each of the optoelectronic semiconductor chips has a first main surface on a top side and a second main surface on a bottom side, - arranging and fixing the plurality of optoelectronic semiconductor chips on an intermediate carrier, wherein the optoelectronic semiconductor chips are arranged at a distance from one another, so that an intermediate space is formed between each two immediately adjacent optoelectronic semiconductor chips, and - Filling the gaps with an electrically insulating layer, - applying a seed layer to the side of the optoelectronic semiconductor chips and the electrically insulating layer facing away from the intermediate carrier, and - galvanic or electroless deposition of a metallic carrier onto the nucleation layer.

[0018] By means of the method described here, an optoelectronic semiconductor component described here can preferably be produced. This means that all features disclosed for the method are also disclosed for the optoelectronic semiconductor component, and vice versa. The following embodiments relate both to the optoelectronic semiconductor component and to the method described here.

[0019] According to at least one embodiment, the metallic carrier projects beyond the optoelectronic semiconductor chip in at least one lateral direction by at least 100 µm, preferably by at least 250 µm. It is possible for the metallic carrier to project beyond the optoelectronic semiconductor chip in all lateral directions by at least 100 µm, preferably by at least 250 µm.

[0020] According to at least one embodiment, the metallic carrier projects beyond the optoelectronic semiconductor chip in at least one lateral direction by at least 10%, preferably by at least 25%, of the maximum edge length of the optoelectronic semiconductor chip. For a rectangular optoelectronic semiconductor chip, the maximum edge length of the optoelectronic semiconductor chip is the length of the longer of the two edges. For a round optoelectronic semiconductor chip, the maximum edge length is the diameter of the optoelectronic semiconductor chip.

[0021] According to at least one embodiment, a seed layer is arranged between the metallic carrier and the second main surface of the optoelectronic semiconductor chip, which seed layer is in direct contact with the metallic carrier and the second main surface of the optoelectronic semiconductor chip at least in places. The seed layer can consist of the same or a different material than the metallic carrier. For example, the seed layer is applied by sputtering or vapor deposition. The seed layer provides a mechanically strong connection between the optoelectronic semiconductor chip and the metallic carrier, which can only be removed by destroying the optoelectronic semiconductor component.

[0022] According to at least one embodiment of the optoelectronic semiconductor component, the seed layer is configured to reflect electromagnetic radiation to be emitted or detected by the optoelectronic semiconductor chip. For this purpose, the seed layer preferably has a reflectivity of at least 50%, for example, of at least 75%, for this electromagnetic radiation. The seed layer may contain silver, for example.

[0023] According to at least one embodiment, the metallic carrier is electrically conductive and forms at least one electrical connection point of the optoelectronic semiconductor component. This means that the metallic carrier is electrically conductively connected to at least one contact point of the optoelectronic semiconductor chip. For example, the side of the metallic carrier facing away from the optoelectronic semiconductor chip then forms at least one electrical connection point of the optoelectronic semiconductor component, via which contact can be made with the optoelectronic semiconductor component. In this embodiment, the seed layer is also electrically conductive, so that an electrical current impressed via the metallic carrier passes through the seed layer into the optoelectronic semiconductor chip.

[0024] According to at least one embodiment, the metallic carrier comprises subregions that are electrically insulated from one another, wherein each of the subregions forms an electrical connection point of the optoelectronic semiconductor component, and the electrical connection points are of different names. This means that the metallic carrier is divided into at least two subregions that form connection points for the n- and p-side contacting of the optoelectronic semiconductor chip.

[0025] In this way, it is possible for the optoelectronic semiconductor component to be surface-mounted, wherein the connection points are formed on the side of the metallic carrier facing away from the optoelectronic semiconductor chip.

[0026] According to at least one embodiment, the metallic carrier contains or consists of one of the following materials: nickel, copper, gold, palladium. It is possible for the metallic carrier to have regions, for example layers, of other materials. Thus, the metallic carrier can, for example, have the following layer structure from its side facing the optoelectronic semiconductor chip to its side facing away from the optoelectronic semiconductor chip: a layer of nickel, a layer of palladium, a layer of gold.

[0027] According to at least one embodiment, the optoelectronic semiconductor component comprises a plurality of substrateless optoelectronic semiconductor chips, wherein the metallic carrier completely extends beyond all optoelectronic semiconductor chips in the lateral direction. The optoelectronic semiconductor chips can then, in particular, also be optoelectronic semiconductor chips that emit light of different colors. For example, the optoelectronic semiconductor component then comprises at least one optoelectronic semiconductor chip that emits red light, one green light, and one blue light. The optoelectronic semiconductor chips of the optoelectronic semiconductor component can be electrically separated from one another so that they can be operated independently of one another.

[0028] According to at least one embodiment, the optoelectronic semiconductor component comprises exactly a single substrateless optoelectronic semiconductor chip.

[0029] According to at least one embodiment, the optoelectronic semiconductor component comprises an electrically insulating layer that covers the metallic carrier on its outer surface facing the optoelectronic semiconductor chip and on its outer surface free from the optoelectronic semiconductor chip, wherein the electrically insulating layer covers a side surface of the optoelectronic semiconductor chip at least in places. In other words, the upper side of the metallic carrier facing the optoelectronic semiconductor chip is covered with the optoelectronic semiconductor chip and the electrically insulating layer. The electrically insulating layer can, for example, be flush with the first main surface of the optoelectronic semiconductor chip facing away from the carrier. The optoelectronic semiconductor chip can be completely covered by the electrically insulating layer on its side surfaces.The main surface of the carrier facing the optoelectronic semiconductor chip at the top of the carrier is therefore completely covered by the electrically insulating layer and the optoelectronic semiconductor chip.

[0030] According to at least one embodiment, the electrically insulating layer is configured to reflect electromagnetic radiation to be emitted or detected by the optoelectronic semiconductor chip during operation. For this purpose, the electrically insulating layer can, for example, comprise particles of a filler. Reflective means that the electrically insulating layer has a reflectivity for radiation in the visible spectral range of, in particular, more than 80% or more than 90%, preferably more than 94%. The electrically insulating layer preferably reflects diffusely. To an observer, the encapsulation material preferably appears white. The reflective particles are made, for example, from or consist of a metal oxide such as aluminum oxide or titanium oxide, a metal fluoride such as calcium fluoride, or a silicon oxide. An average diameter of the particles, for example a median diameter d 50in Q0, is preferably between 0.3 µm and 5 µm inclusive. The weight fraction of the particles in the total reflective layer is preferably between 5% and 50% inclusive, in particular between 10% and 30% inclusive. The particles have a reflective effect due to their preferably white color and / or due to their refractive index difference from the matrix material.

[0031] According to at least one embodiment, only the first main surface of the optoelectronic semiconductor chip is freely accessible. This means that, apart from the first main surface, the optoelectronic semiconductor chip is completely covered. The optoelectronic semiconductor chip can be covered, for example, by the seed layer, the metallic carrier, and / or the electrically insulating layer. In this way, it can be ensured, for example, that the optoelectronic semiconductor chip, if it is a radiation-emitting semiconductor chip, emits the electromagnetic radiation generated during operation exclusively through the first main surface.

[0032] According to at least one embodiment, prior to the galvanic or electroless deposition, electrically insulating separation structures are created on the seed layer, which partially cover the seed layer. These separation structures serve to form electrically isolated partial regions of the metallic carrier, which in the finished optoelectronic semiconductor component form connection points of the optoelectronic semiconductor component, which may be of different denominations.

[0033] In the following, the optoelectronic semiconductor component described here and the method described here for producing an optoelectronic semiconductor component are explained in more detail using exemplary embodiments and the associated figures. The Fig. 1A and Fig. 1B show, using schematic perspective representations, two embodiments of optoelectronic semiconductor components described here. Based on the Fig. 2A, Fig. 2B, Fig. 2C, Fig. 2D, Fig. 2E, Fig. 3A, Fig. 3B, Fig. 3C, Fig. 3D, Fig. 3E, Fig. 3F, Fig. 3G, embodiments of the methods described here are explained in more detail. Based on the schematic representations of the Fig. 4A and Fig. 4B, a further embodiment of an optoelectronic semiconductor component described here is explained in more detail.

[0034] Identical, similar, or functionally identical elements are provided with the same reference numerals in the figures. The figures and the relative sizes of the elements depicted in the figures are not to be considered to scale. Rather, individual elements may be exaggerated for clarity and / or clarity.

[0035] In conjunction with the perspective schematic representation of the Fig. 1A illustrates in more detail a first exemplary embodiment of an optoelectronic semiconductor component described here. The optoelectronic semiconductor component comprises a substrateless optoelectronic semiconductor chip 1. The substrateless optoelectronic semiconductor chip 1 is free of a growth substrate. The optoelectronic semiconductor chip is, for example, a luminescence diode chip, for example a light-emitting diode, or a radiation-detecting chip such as a photodiode. The optoelectronic semiconductor chip has a first main surface 1a on its upper side. On its underside, the optoelectronic semiconductor chip 1 has a second main surface 1b. For example, the optoelectronic semiconductor chip is cuboid-shaped, so that the first main surface 1a and the second main surface 1b have the same shape and size.

[0036] The optoelectronic semiconductor component further comprises a metallic carrier 2. The metallic carrier is produced by galvanic or electroless deposition. A seed layer 21 is arranged between the metallic carrier 2 and the second main surface 1b of the optoelectronic semiconductor chip 1, which seed layer provides a mechanically strong connection between the metallic carrier 2 and the optoelectronic semiconductor chip 1. The carrier 2 completely projects beyond the optoelectronic semiconductor chip 1 at its side surfaces 1c in all lateral directions. For example, the base area of the carrier 2 is at least twice as large as the surface area of the second main surface 1b and / or the first main surface 1a of the optoelectronic semiconductor chip.

[0037] In the present case, the carrier 2 is electrically conductive. The seed layer 21 is also electrically conductive. The carrier 2 therefore forms an electrical connection point of the optoelectronic semiconductor component and is electrically conductively connected to the optoelectronic semiconductor chip 1 at the underside 1b.

[0038] In connection with the schematic perspective representation of the Fig. 1B illustrates a further exemplary embodiment of an optoelectronic semiconductor component described here. In this exemplary embodiment, the carrier 2 has two partial regions 2a, 2b, which are electrically insulated from one another by an electrically insulating material 3. The electrically insulating material can be formed, for example, from silicone, epoxy resin, a ceramic material, or a glass-containing material. The partial regions 2a, 2b form connection points of the optoelectronic semiconductor chip 1 of different names. For this purpose, they are, for example, electrically conductively connected to different regions of the optoelectronic semiconductor chip 1 on the underside 1b of the optoelectronic semiconductor chip 1.

[0039] In the present case, the optoelectronic semiconductor component is therefore surface-mountable, i.e. it can be mechanically fastened and electrically contacted by an adhesive or soldering connection to the underside of the carrier 2 facing away from the semiconductor chip 1.

[0040] Another difference to the optoelectronic semiconductor component according to the Fig. 1A shows the optoelectronic semiconductor component in the embodiment of Fig. 1B has an electrically insulating layer 4, which covers the optoelectronic semiconductor chip 1 at its side surfaces 1c and can be flush with the first main surface 1a, so that the optoelectronic semiconductor chip 1 and the electrically insulating layer 4 do not overlap each other. For example, it is possible for the electrically insulating layer 4 to be radiation-reflecting and, for this purpose, to be provided with particles of a filler.

[0041] Furthermore, it is possible for the electrically insulating layer 4 and the electrically insulating material 3 to be formed from the same material. The electrically insulating layer 4 can, for example, cover the seed layer 21. However, in the region of the electrically insulating material 3, the seed layer 21 is removed, so that the electrically insulating layer 4 and the electrically insulating material 3 are in direct contact with each other.

[0042] In connection with the Fig. 2A to 2E illustrate a first exemplary embodiment of a method described here for producing an optoelectronic semiconductor component. In a first method step, substrateless optoelectronic semiconductor chips 1 are applied with their first main surfaces 1a to an intermediate carrier 5, which may be formed, for example, from glass. The mechanical adhesion between the intermediate carrier 5 and the optoelectronic semiconductor chips 1 is mediated by a connecting layer 6, which may be, for example, an adhesive bond. Gaps 7 are formed between the optoelectronic semiconductor chips 1.

[0043] The gaps 7 are subsequently provided with the electrically insulating layer 4, which can be formed, for example, with PCB or spin-on glass.

[0044] In a next process step, the seed layer 21 is applied to the upper side of the composite facing away from the intermediate carrier 5. The seed layer 21 is followed by the metallic carrier composite 20, which is deposited, for example, galvanically or electrolessly onto the seed layer 21 (see Fig. 2B).

[0045] In a further process step ( Fig. 2C), the intermediate carrier 5 is removed again. On the side facing away from the carrier assembly 20, the first main surfaces 1a of the optoelectronic semiconductor chips 1 are exposed.

[0046] In a further process step 2d, the singulation to form individual optoelectronic semiconductor components takes place, each with a metallic carrier 2 and at least one optoelectronic semiconductor chip 1, cf. Fig. 2D.

[0047] As in connection with Fig. As shown in Figure 2E, the optoelectronic semiconductor component can then be attached to a connection carrier, for example, a lead frame 11, with the underside of the metallic carrier 2 facing away from the optoelectronic semiconductor chip 1, for example by soldering. The metallic carrier 2 then forms a first electrical connection point of the optoelectronic semiconductor component. A second electrical connection point is formed by the bond pad 10a on the first main surface 1a of the optoelectronic semiconductor chip 1, which is connected to a corresponding bond pad 10b of the carrier frame 11 by means of a connecting wire 9.

[0048] As shown schematically in Fig. As shown in Figure 2E, heat 8 generated by the optoelectronic semiconductor chip 1 during operation can be dissipated through the metallic carrier 2 to the carrier frame 11 over a particularly large area.

[0049] In connection with the Fig. 3A to 3G, a further embodiment of a method for producing an optoelectronic semiconductor component described here is explained in more detail. One difference from the method described in connection with the Fig. 2A to 2E, the procedure described here is the Fig. 3C. In this process step, electrically insulating separation structures are formed, for example, by exposing and developing a photoresist 12 on the side of the seed layer 21 facing away from the intermediate carrier 5. The separation structures 12 form in the next process step, Fig. 3D, electrical insulators during deposition of the carrier composite 20 galvanically or electrolessly.

[0050] In a further process step, Fig. 3E, the electrically insulating separating structures 12 are detached, so that openings 13 are created in the carrier assembly 20.

[0051] In the Fig. 3F shows that the openings 13 are subsequently filled with the electrically insulating material 3.

[0052] By isolating them, the Fig. 3G, which have a metallic carrier 2 with two partial regions 2a, 2b, which form electrical connection points of the optoelectronic semiconductor component of different names. The separation can, for example, as in the embodiment of Fig. 2A to 2E, using a photo technique and subsequent etching, for example with FeCl3.

[0053] In connection with the Fig. 4A and Fig. 4B, a further embodiment of an optoelectronic semiconductor component described here is explained in more detail, which, for example, can be produced using a method similar to that described in connection with the Fig. 3A to 3G. In contrast to the process described in connection with the Fig. In the process described in Figures 3A to 3G, the electrically insulating layer 4 is omitted by removing it after completion of the process. Alternatively, however, layer 4 can also remain in the optoelectronic semiconductor component.

[0054] Based on the Fig. 4A and Fig. Figure 4B illustrates the contacting of the optoelectronic semiconductor chip 1 in more detail. The optoelectronic semiconductor chip 1 has a contact point 14a and a contact point 14b isolated therefrom on its underside, i.e., on the second main surface 1b. The electrically isolated contact point 14b serves, for example, for the p-side connection of the optoelectronic semiconductor chip 1, while the contact point 14a serves for the n-side connection.

[0055] For example, starting from the p-side contact point 14b, a breakthrough can be formed through the n-conducting semiconductor material and an active region of the optoelectronic semiconductor chip 1, which is coated with an electrically insulating material and filled with an electrically conductive material, which establishes an electrical contact with the p-side of the semiconductor chip 1. Alternatively, the breakthrough can also be connected to the n-conducting semiconductor material, i.e., unlike in the Fig. As shown in Figure 4B, n-side and p-side contacts can also be swapped.

[0056] The electrically insulating material 3 is now arranged in a trench such that a partial region 2b of the carrier 2 is created, which is electrically insulated from the partial regions 2a. In this way, two connection points for electrically contacting the optoelectronic semiconductor component are arranged on the underside of the carrier facing away from the semiconductor chip 1. Fig. Figure 4B shows a sectional view along the interface between carrier 2 and optoelectronic semiconductor chip 1.

Claims

[1] Optoelectronic semiconductor device with - a substrate-less optoelectronic semiconductor chip (1) having a first main surface (1a) on an upper side and a second main surface (1b) on an underside, - an electrically insulating layer (4), and - a metallic carrier (2) arranged on the underside of the optoelectronic semiconductor chip (1), wherein, - the metallic carrier (2) projects beyond the optoelectronic semiconductor chip (1) in at least one lateral direction (1), - the metallic carrier (3) is deposited galvanically or electrolessly on the second main surface (1b) of the optoelectronic semiconductor chip (1), - the electrically insulating layer (4) is designed to reflect electromagnetic radiation to be emitted or detected by the optoelectronic semiconductor chip (1) during operation, and - the electrically insulating layer (4) appears white. [2] Optoelectronic semiconductor component according to the preceding claim, in which a seed layer (21) is arranged between the metallic carrier (2) and the second main surface (1b) of the optoelectronic semiconductor chip (1), which seed layer is at least partially in direct contact with the metallic carrier (2) and the second main surface (1b) of the optoelectronic semiconductor chip (1). [3] Optoelectronic semiconductor component according to the preceding claim, in which the seed layer (21) is designed to reflect electromagnetic radiation to be emitted or detected by the optoelectronic semiconductor chip (1) during operation. [4] Optoelectronic semiconductor component according to one of the preceding claims, in which the metallic carrier (2) is electrically conductive and forms at least one electrical connection point of the optoelectronic semiconductor component. [5] Optoelectronic semiconductor component according to one of the preceding claims, in which the metallic carrier (2) comprises partial regions (2a, 2b) which are electrically insulated from one another, each of the partial regions forming an electrical connection point of the optoelectronic semiconductor component, the electrical connection points being of different names. [6] Optoelectronic semiconductor component according to the preceding claim, which is surface-mountable. [7] Optoelectronic semiconductor component according to one of the preceding claims, in which the metallic carrier (2) completely projects laterally beyond the optoelectronic semiconductor chip (1). [8] Optoelectronic semiconductor component according to one of the preceding claims, comprising a plurality of substrate-less optoelectronic semiconductor chips (1), wherein the metallic carrier (3) completely projects beyond all optoelectronic semiconductor chips (1) in the lateral direction. [9] Optoelectronic semiconductor component according to one of the preceding claims, in which the electrically insulating layer (4) covers the metallic carrier (2) on its outer surface facing the optoelectronic semiconductor chip (1) and on its outer surface free from the optoelectronic semiconductor chip (1), wherein the electrically insulating layer (4) covers a side surface (1c) of the optoelectronic semiconductor chip (1) at least in places. [10] Optoelectronic semiconductor component according to the preceding claim, wherein the electrically insulating layer (4) comprises particles of a filler. [11] Optoelectronic semiconductor component according to one of the preceding claims, in which the optoelectronic semiconductor chip (1) is completely covered, in particular by the seed layer (21), the metallic carrier (2) and / or the electrically insulating layer (4), apart from the first main surface (1a). [12] Optoelectronic semiconductor component according to one of the preceding claims, in which the optoelectronic semiconductor chip (1) is a radiation-emitting semiconductor chip which emits electromagnetic radiation during operation exclusively through the first main surface (1a). [13] A method for producing an optoelectronic semiconductor device comprising the following steps: - Providing a plurality of substrate-less optoelectronic semiconductor chips (1), wherein each of the optoelectronic semiconductor chips (1) has a first main surface (1a) on an upper side and a second main surface (1b) on an underside, - arranging and fixing the plurality of optoelectronic semiconductor chips (1) on an intermediate carrier (5), wherein the optoelectronic semiconductor chips (1) are arranged spaced apart from one another, so that an intermediate space (7) is formed between each two immediately adjacent optoelectronic semiconductor chips (1), - filling the gaps (7) with an electrically insulating layer (4), - applying a seed layer (21) to the side of the optoelectronic semiconductor chips (1) and the electrically insulating layer (4) facing away from the intermediate carrier (5), - galvanic or electroless deposition of a metallic carrier (2) onto the nucleation layer (21). [14] Method according to the preceding claim, wherein, prior to the galvanic or electroless deposition, electrically insulating separating structures (12) are produced on the seed layer (21) which cover the seed layer (21) in places. [15] Method according to one of claims 13 or 14, wherein an optoelectronic semiconductor component according to one of claims 1 to 12 is produced.

Images